PS21865-P中文资料
PS21865中文资料
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Intellimod™ ModuleDual-In-Line Intelligent Power Module20 Amperes/600 VoltsPS2186587Description:DIP-IPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry in an ultra compactdual-in-line transfer-mold package for use in driving small three phase motors. Use of 5thgeneration IGBTs, DIP packaging, and application specific HVICs allow the designer to reduce inverter size and overall design time.Features:£ Compact Packages £ Single Power Supply £ Integrated HVICs£ Direct Connection to CPU Applications:£ Washing Machines £ Refrigerators £ Air Conditioners £ Small Servo Motors £ Small Motor ControlOrdering Information:PS21865 is a 600V , 20 Ampere DIP Intelligent Power Module.Dimensions Inches Millimeters A 3.11±0.02 79.0±0.5 B 1.22±0.02 31.0±0.5 C 0.28±0.02 7.0±0.5 D 2.64±0.01 67.0±0.3 E 0.53±0.02 13.4±0.5 F 0.84±0.02 21.4±0.5 G 1.37±0.02 34.9±0.5 H 0.15±0.01 3.8±0.2 J 0.11±0.01 2.8±0.3 K 0.39±0.01 10.0±0.3 L 0.79±0.01 20.0±0.3 M 0.50±0.04 12.8±1.0 N 2.98 75.6Dimensions Inches MillimetersP 0.04 1.0 Q 0.18±0.01 Dia. 4.5±0.2 Dia. R 0.15 3.8 S Min. 1.0 Min. T 0.02 Min. 0.7 Min. U 0.1 2.5 V 0.03±0.01 0.8±0.2 W 0.02 0.7 X 0.45±0.02 11.5±0.5 Y 0.18 4.5 Z 0.12 3.1 AA 0.02 0.6Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272PS21865Intellimod™ ModuleDual-In-Line Intelligent Power Module20 Amperes/600 VoltsAbsolute Maximum Ratings, T j = 25°C unless otherwise specifiedCharacteristics Symbol PS21865 Units Power Device Junction Temperature* T j-20 to 125 °C Module Case Operation T emperature (See T f Measurement Point Illustration) T f-20 to 100 °C Storage Temperature T stg-40 to 125 °C Mounting Torque, M4 Mounting Screws — 13 in-lb Module Weight (Typical) — 65 Grams Self-protection Supply Voltage Limit (Short Circuit Protection Capability)** V CC(prot.)400 Volts Isolation Voltage, AC 1 minute, 60Hz Sinusoidal, Connection Pins to Heatsink Plate V ISO2500 Volts *The maximum junction temperature rating of the power chips integrated within the DIP-IPM is 150°C (@T f≤ 100°C). However, to ensure safe operation of the DIP-IPM,the average junction temperature should be limited to T j(avg)≤ 125°C (@T f≤ 100°C).**V D = 13.5 ~ 16.5V, Inverter Part, T j = 125°C, Non-repetitive, Less than 2µsIGBT Inverter SectorCollector-Emitter Voltage (T f = 25°C) V CES600 Volts Collector Current (T f = 25°C) ±I C20 Amperes Peak Collector Current (T f = 25°C, <1ms) ±I CP40 Amperes Supply Voltage (Applied between P - N) V CC450 Volts Supply Voltage, Surge (Applied between P - N) V CC(surge)500 Volts Collector Dissipation (T f = 25°C, per 1 Chip) P C52.6 WattsControl SectorP1PC N1NC DSupply Voltage (Applied between V UFB-V UFS,V VFB-V VFS, V WFB-V WFS) V DB20 Volts Input Voltage (Applied between U P, V P, W P-V PC, U N, V N, W N-V NC) V IN-0.5 ~ V D+0.5 Volts Fault Output Supply Voltage (Applied between F O-V NC) V FO-0.5 ~ V D+0.5 Volts Fault Output Current (Sink Current at F O Terminal) I FO 1 mA Current Sensing Input Voltage (Applied between C IN-V NC) V SC-0.5 ~ V D+0.5 Volts88Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272PS21865Intellimod™ ModuleDual-In-Line Intelligent Power Module20 Amperes/600 VoltsElectrical and Mechanical Characteristics, T j = 25°C unless otherwise specifiedCharacteristics Symbol Test Conditions Min. Typ. Max.UnitsIGBT Inverter SectorCollector-Emitter Cutoff Current I CES V CE = V CES, T j = 25°C —— 1.0 mAV CE = V CES, T j = 125°C ——10 mA Diode Forward Voltage V EC T j = 25°C, -I C = 20A, V IN = 0V — 1.5 2.0 Volts Collector-Emitter Saturation Voltage V CE(sat) I C = 20A, T j = 25°C, V D = V DB = 15V, V IN = 5V — 1.6 2.1 VoltsI C = 20A, T j = 125°C, V D = V DB = 15V, V IN = 5V — 1.7 2.2 Volts Inductive Load Switching Times t on0.7 1.30 1.90 µsrr CC D DBC(on)C j INoffC(off)T fMeasurement Point89Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272PS21865Intellimod™ ModuleDual-In-Line Intelligent Power Module20 Amperes/600 VoltsElectrical and Mechanical Characteristics, T j = 25°C unless otherwise specifiedCharacteristics Symbol Test Conditions Min. Typ. Max.UnitsControl SectorSupply Voltage V D Applied between V P1-V PC, V N1-V NC13.5 15.0 16.5 Volts V DB Applied between V UFB-V UFS, 13.0 15.0 18.5 VoltsV VFB-V VFS, V WFB-V WFSCircuit Current I D V D = V DB = 15V, V IN = 5V,—— 5.00 mATotal of V P1-V PC, V N1-V NCV D = V DB = 15V, V IN = 0V, —— 7.00 mATotal of V P1-V PC, V N1-V NCV D = V DB = 15V, V IN = 5V, —— 0.40 mAV UFB-V UFS, V VFB-V VFS, V WFB-V WFSV D = V DB = 15V, V IN = 0V, —— 0.55 mAV UFB-V UFS, V VFB-V VFS, V WFB-V WFSFault Output Voltage V FOH V SC = 0V, F O Circuit: 10k Ω to 5V Pull-up 4.9 —— Volts V FOL V SC = 1V, I FO = 1mA—— 0.95 Volts Input Current I IN V IN = 5V 1.0 1.50 2.00 mA Short-Circuit Trip Level* V SC(ref) T j = 25°C, V D = 15V0.43 0.48 0.53 Volts Supply Circuit Undervoltage UV DBt Trip Level, T j≤ 125°C10.0 — 12.0 Volts Protection UV DBr Reset Level, T j≤ 125°C10.5 — 12.5 VoltsUV Dt Trip Level, T j≤ 125°C10.3 — 12.5 VoltsUV Dr Reset Level, T j≤ 125°C10.8 — 13.0 Volts Fault Output Pulse Width** t FO C FO = 22nF 1.0 1.8—msth(on)P P P PC,th(off)N N N NCThermal CharacteristicsCharacteristic Symbol Condition Min. Typ. Max.Units Junction to Fin R th(j-f)Q IGBT Part (Per 1/6 Module)—— 1.90°C/Watt Thermal Resistance R th(j-f)D FWDi Part (Per 1/6 Module)—— 3.00°C/WattRecommended Conditions for UseCharacteristic Symbol Condition Min. Typ. Max.Units Supply Voltage V CC Applied between P-N T erminals 0300 400 Volts Control Supply Voltage V D Applied between V P1-V PC, V N1-V NC13.5 15.0 16.5Volts V DB Applied between V UFB-V UFS,13.0 15.0 18.5VoltsV VFB-V VFS, V WFB-V WFSControl Supply VariationΔV D, ΔV DB-1 — 1 V/µs PWM Input Frequency f PWM T f ≤ 100°C, T j≤ 125°C —— 20 kHz * Short-Circuit protection is functioning only at the lower arms. Please select the value of the external shunt resistor such that the SC trip level is less than 34A.**Fault signal is asserted when the lower arm short circuit or control supply under-voltage protective functions operate. The fault output pulse-width t FO depends on the capacitance value of C FO according to the following approximate equation: C FO = (12.2 x 10-6) x t FO {F} .9091PS21865Intellimod™ ModuleDual-In-Line Intelligent Power Module 20 Amperes/600 VoltsPowerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Recommended Conditions for UseCharacteristic Symbol Condition Min. Typ. Max. Units Allowable rms Current* I O V CC = 300V , V D = 15V , f C = 5kHz, — — 15 Arms PF = 0.8, Sinusoidal, T j ≤ 125°C, T f ≤ 100°CV CC = 300V , V D = 15V , f C = 15kHz, — — 9.3 Arms PF = 0.8, Sinusoidal, T j ≤ 125°C, T f ≤ 100°CMinimum Input P WIN(on)** 0.3 — — µs Pulse Width P WIN(off)***CC D Between Rated Current 13.0 ≤ V DB ≤ 18.5V , -20°C ≤ T f ≤ 100°C, 2.5 — — µs V NC Variation V NC Between V NC -N (Including Surge) -5.0 — 5.0 Volts Arm Shoot-through t DEAD For Each Input Signal, T f < 100°C 2.0 — — µs Blocking Time* The allowable rms current value depends on the actual application conditions.**If input signal ON pulse is less than P WIN(on), the device may not respond.***The IPM may fail to respond to an ON pulse if the preceeding OFF pulse is less than P WIN(off).REVERSE RECOVERY CHARACTERISTICS(TYPICAL)C O L L E C T O R -E M I T T E R S A T U R A T I O N V O L T A G E , V C E (s a t ), (V O L T S )COLLECTOR-EMITTERSATURATION VOLTAGE CHARACTERISTICS(TYPICAL)2.01.51.00.5FREE-WHEEL DIODEFORWARD CHARACTERISTICS(TYPICAL)100102101EMITTER CURRENT, I E , (AMPERES)R E V E R S E R E C O V E R Y T I M E , t r r , (n s )COLLECTOR CURRENT, I C , (AMPERES)103100102101102101COLLECTOR CURRENT, I C , (AMPERES)Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272PS21865Intellimod™ ModuleDual-In-Line Intelligent Power Module20 Amperes/600 VoltsDIP-IPM Application Circuit (Shown Pins Up)plane.Component Selection:Dsgn.Typ. Value DescriptionD11A, 600V Boot strap supply diode – Ultra fast recoveryC110-100uF, 50V Boot strap supply reservoir – Electrolytic, long life, low Impedance, 105°C (Note 5)C20.22-2.0uF, 50V Local decoupling/High frequency noise filters – Multilayer ceramic (Note 8)C310-100uF, 50V Control power supply filter – Electrolytic, long life, low Impedance, 105°CC422nF, 50V Fault lock-out timing capacitor – Multilayer ceramic (Note 4)C5100pF, 50V Optional input signal noise filter – Multilayer ceramic (Note 1)C6200-2000uF, 450V Main DC bus filter capacitor – Electrolytic, long life, high ripple current, 105°CC70.1-0.22uF, 450V Surge voltage suppression capacitor – Polyester/Polypropylene film (Note 9)C SF1000pF, 50V Short circuit detection filter capacitor – Multilayer Ceramic (Note 6, Note 7)R SF 1.8k ohm Short circuit detection filter resistor (Note 6, Note 7)R SHUNT5-100 mohm Current sensing resistor - Non-inductive, temperature stable, tight tolerance (Note 10)R110 ohm Boot strap supply inrush limiting resistor (Note 5)R2330 ohm Optional control input noise filter (Note 1, Note 2)R310k ohm Fault output signal pull-up resistor (Note 3)Notes:1) To prevent input signal oscillations minimize wiring length to controller (~2cm). Additional RC filtering (C5 etc.) may berequired. If filtering is added be careful to maintain proper dead time. See application notes for details.2) Internal HVIC provides high voltage level shifting allowing direct connection of all six driving signals to the controller.3) F O output is an open collector type. Pull up resistor (R3) should be adjusted to current sink capability of the module.4) C4 sets the fault output duration and lock-out time. C4 ≈ 12.2E-6 x t FO, 22nF gives ~1.8ms5) Boot strap supply component values must be adjusted depending on the PWM frequency and technique.6) Wiring length associated with R SHUNT, R SF, C SF must be minimized to avoid improper operation of the SC function.7) R SF, C SF set short-circuit protection trip time. Recommend time constant is 1.5us-2.0us. See application notes.8) Local decoupling/high frequency filter capacitors must be connected as close as possible to the modules pins.9) The length of the DC link wiring between C6, C7, the DIP’s P terminal and the shunt must be minimized to preventexcessive transient voltages. In particular C7 should be mounted as close to the DIP as possible.10) Use high quality, tight tolorance current sensing resistor. Connect resistor as close as possible to the DIP’sN terminal. Be careful to check for proper power rating. See application notes for calculation of resistance value.92。
MITSUBISHI SEMICONDUCTOR PS21265-P AP 说明书
INSULATED TYPEINSULATED TYPEINSULATED TYPE2.052.152.001.85—0.602.100.801101.953.000.067mAV T j = 25°C T j = 125°CI C = 20A, T j = 25°CI C = 20A, T j = 125°C V CE(sat)V EC t on t rr t c(on)t off t c(off)I CESConditionSymbol ParameterLimits Inverter IGBT part (per 1/6 module)Inverter FWDi part (per 1/6 module)Case to fin (per 1 module) thermal grease appliedR th(j-c)Q R th(j-c)F R th(c-f)FMin.THERMAL RESISTANCETyp.Max.——————Unit T j = 25°C, –I C = 20A, V IN = 0V ConditionSymbol ParameterLimits Min.Typ.Max.———0.65——————Unit ELECTRICAL CHARACTERISTICS (T j = 25°C, unless otherwise noted)INVERTER PARTCollector-emitter saturation voltageFWDi forward voltageJunction to case thermalresistance (Note 3)V D = V DB = 15VV IN = 5V Switching timesV CC = 300V, V D = V DB = 15VI C = 20A, T j = 125°C, V IN = 0 ↔ 5V Inductive load (upper-lower arm)Collector-emitter cut-off currentV CE = V CES1.551.651.501.250.300.401.500.50——V µs µs µs µs µs °C/W °C/W °C/WCONTROL (PROTECTION) PARTNote 4:Short circuit protection is functioning only at the low-arms. Please select the external shunt resistance such that the SC trip-level isless than 2.0 times of the collector current rating (20A).5:Fault signal is output when the low-arms short circuit or control supply under-voltage protective functions operate. The fault output pulse-width t FO depends on the capacitance value of C FO according to the following approximate equation : C FO = 12.2 ✕ 10-6 ✕ t FO [F].SymbolI D V FOHV FOLV SC(ref)I INUV DBtUV DBrUV DtUV Drt FOV th(on)V th(off)ParameterConditionLimits Unit Circuit currentFault output voltageShort circuit trip level Control supply under-voltage protection Fault output pulse width ON threshold voltage OFF threshold voltage V D = V DB = 15V V IN = 5V T otal of V P1-V PC , V N1-V NC V UFB -V UFS , V VFB -V VFS , V WFB -V WFS V SC = 0V, F O circuit pull-up to 5V with 10k ΩV SC = 1V, I FO = 1mAT C = –20~100°C, V D = 15V (Note 4)V IN = 5VTrip level Reset levelTrip level Reset levelC FO = 22nF (Note 5)Applied between U P , V P , W P -V PC , U N , V N , W N -V NC————4.9—0.451.010.010.510.310.81.02.10.8———————1.5————1.82.31.47.000.557.000.55—0.950.522.012.012.512.513.0—2.62.1Min.Typ.Max.mA mA mA mA V V V mA V V V V ms V VV D = V DB = 15V V IN = 0V Total of V P1-V PC , V N1-V NC V UFB -V UFS , V VFB -V VFS , V WFB -V WFS T j ≤ 125°CNote 3 : Grease with good thermal conductivity should be applied evenly with a thickness of about +100µm~+200µm on the contact surfaceof DIP-IPM and heat-sink.Input current Contact thermal resistanceINSULATED TYPEINSULATED TYPEINSULATED TYPEINSULATED TYPEINSULATED TYPEINSULATED TYPE。
IRS2186PBF中文资料
Data Sheet No. PD60271Typical ConnectionHIGH AND LOW SIDE DRIVERFeatures•Floating channel designed for bootstrap operation •Fully operational to +600 V•Tolerant to negative transient voltage, dV/dt immune•Gate drive supply range from 10 V to 20 V •Undervoltage lockout for both channels •3.3 V and 5 V input logic compatible•Matched propagation delay for both channels •Logic and power ground +/- 5V offset.•Lower di/dt gate driver for better noise immunity •Output source/sink current capability 4 A/4 A8-Lead PDIP IRS218614-Lead SOIC IRS21864SPRELIMINARY 8-Lead SOIC IRS2186SIRS2186/IRS21864(S)PbF 2PRELIMINARYAbsolute Maximum RatingsAbsolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured Note 2: L ogic operational for V S of -5 V to +600 V. L ogic state held for V S of -5 V to -V BS . (Please refer to the Design Tip DT97-3 for more details).Recommended Operating ConditionsThe Input/Output logic timing diagram is shown in Fig. 1. For proper operation the device should be used within the recommended conditions. The V and V offset rating are tested with all supplies biased at a 15 V differential.Note 1: All suplies are fully tested at 25 V and an internal 20 V clamp exists for each supply.IRS2186/IRS21864(S)PbFIRS2186/IRS21864(S)PbF4PRELIMINARYFunctional Block DiagramsIRS2186/IRS21864(S)PbFLead Assignments8-Lead PDIP 8-Lead SOICLead DefinitionsSymbol DescriptionHIN Logic input for high side gate driver output (HO), in phase (IRS2186/IRS21864)LIN Logic input for low side gate driver output (LO), in phase (IRS2186/IRS218164)VSS Logic ground (IRS21864 only)V B High side floating supply HO High side gate drive output V S High side floating supply return V CC Low side and logic fixed supply LO Low side gate drive output COMLow side returnIRS2186PbF IRS2186SPbF12348765HIN LIN COM LOV B HO V S V CC12348765HIN LIN COM LOV B HO V S V CC1234567141312111098HIN LIN VSSCOM LO V CCV B HO V S1234567141312111098HIN LIN VSSCOM LO V CCV B HO V S14-Lead PDIP14-Lead SOICIRS21864PbF IRS21864SPbFIRS2186/IRS21864(S)PbF 6PRELIMINARYFigure 1. Input/Output Timing DiagramHIN LIN HO LOFigure 2. Switching Time Waveform DefinitionsFigure 3. Delay Matching Waveform DefinitionsIRS2186/IRS21864(S)PbFIRS2186/IRS21864(S)PbF 8PRELIMINARYIRS2186/IRS21864(S)PbFIRS2186/IRS21864(S)PbF 10PRELIMINARYIRS2186/IRS21864(S)PbFIRS2186/IRS21864(S)PbF 12PRELIMINARYIRS2186/IRS21864(S)PbFIRS2186/IRS21864(S)PbF 14PRELIMINARYIRS2186/IRS21864(S)PbFIRS2186/IRS21864(S)PbF 16PRELIMINARYIRS2186/IRS21864(S)PbFIRS2186/IRS21864(S)PbF 18PRELIMINARYCase outlinesIRS2186/IRS21864(S)PbFCTape & Reel 8-lead SOICIRS2186/IRS21864(S)PbF22PRELIMINARYCLOAD ED TA PE FEED DIRECTIONTape & Reel 14-lead SOICIRS2186/IRS21864(S)PbFPer SCOP 200-002Thisproduct has been designed and qualified for the industrial market.Qualification Standards can be found on IR’s Web Site Data and specifications subject to change without notice.IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-71055/8/2006。
ZVP3306中文资料(Zetex Semiconductors)中文数据手册「EasyDatasheet - 矽搜」
mA VDS=-18 V, V GS=-10V
14
VGS=-10V,I D=-200mA
60
mS VDS=-18V,I D=-200mA
50 pF 25 pF VDS=-18V, V GS=0V, f=1MHz
8 pF
8 ns
8
ns VDD -18V, I D=-200mA
8 ns
8 ns
µ秒.占空比 2%
V
Q-Gate Charge (nC)
栅极电荷 V栅源电压
DS(on)）
Ciss
共源输出
Coss
电容（2）
反向传输
Crss
电容（2）
导通延迟时间（2）（3）
t d(on)
上升时间（2）（3）
tr
关闭延迟时间（2）（3）
t d(off)
下降时间（2）（3）
tf
（1）脉冲条件下进行测定.宽度= 300 （2）抽样检测.
amb = 25°C除非另有说明）.
Voltage (Volts)
Drain Source
V
V Gate Source Voltage 电压饱和特性
(Volts)
(Ω)
RDS(on)-Drain Source On Resistance
I Drain Current (mA)
导通电阻 VS漏电流
On-State Drain Current (Amps)
I V Gate Source Voltage (Volts) 传输特性
and V Normalised R
正常化ř
Junction Temperature (°C)
和V
与温度
芯片中文手册,看全文,戳
HM-65162中文资料
TM March 1997HM-651622K x 8 AsynchronousCMOS Static RAMFN3000.1 1-888-INTERSIL or 321-724-7143|Intersil (and design) is a trademark of Intersil Americas Inc.Absolute Maximum Ratings Thermal InformationSupply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+7.0V Input, Output or I/O Voltage . . . . . . . . . . . GND -0.3V to V CC +0.3V Typical Derating Factor . . . . . . . . . . 05mA/MHz Increase in ICCOP ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1 Operating ConditionsOperating Voltage Range. . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V Operating Temperature RangeHM-65162S-9, HM-65162B-9,HM-65162-9, HM65162C-9. . . . . . . . . . . . . . . . . .-40o C to +85o C Thermal ResistanceθJA (o C/W)θJC (o C/W) CERDIP Package . . . . . . . . . . . . . . . .488 CLCC Package . . . . . . . . . . . . . . . . . .6612 Maximum Storage Temperature Range . . . . . . . . .-65o C to +150o C Maximum Junction Temperature. . . . . . . . . . . . . . . . . . . . . .+175o C Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . .+300o C Die CharacteristicsGate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26000 GatesCAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. DC Electrical Specifications V CC = 5V ±10%; T A = -40o C to +85o C (HM-65162S-9, HM-65162B-9, HM-65162-9, HM-65162C-9)SYMBOL PARAMETERLIMITSUNITS TEST CONDITIONS MIN MAXICCSB1Standby Supply Current-50µA HM-65162B-9, IO = 0mA,E = V CC - 0.3V, V CC = 5.5V-100µA HM-65162S-9, HM65162-9,IO = 0mA, E = V CC - 0.3V,V CC = 5.5V-900µA HM-65162C-9, IO = 0mA,E = V CC - 0.3V, V CC = 5.5VICCSB Standby Supply Current-8mA E = 2.2V, IO = 0mA, V CC = 5.5V ICCEN Enabled Supply Current-70mA E = 0.8V, IO = 0mA, V CC = 5.5V ICCOP Operating Supply Current (Note 1)-70mA E = 0.8V, IO = 0mA, f = 1MHz,V CC = 5.5V ICCDR Data Retention Supply Current-20µA HM-65162B-9, IO = 0mA,V CC = 2.0V, E = VCC - 0.3V-40µA HM-65162S-9, HM-65162-9,IO = 0mA, V CC = 2.0V,E = V CC - 0.3V-300µA HM-65162C-9, IO = 0mA,V CC = 2.0V, E = V CC - 0.3V VCCDR Data Retention Supply Voltage 2.0-VII Input Leakage Current-1.0+1.0µA VI=V CC or GND, V CC = 5.5V IIOZ Input/Output Leakage Current-1.0+1.0µA VIO = V CC or GND, V CC = 5.5V V IL Input Low Voltage-0.30.8V V CC = 4.5VV IH Input High Voltage 2.2V CC +0.3V V CC = 5.5VVOL Output Low Voltage-0.4V IO = 4.0mA, V CC = 4.5V VOH1Output High Voltage 2.4-V IO = -1.0mA, V CC = 4.5V VOH2Output High Voltage (Note 2)V CC -0.4-V IO = -100µA, V CC = 4.5VCapacitance T A = +25o CSYMBOL PARAMETER MAX UNITS TEST CONDITIONS CI Input Capacitance (Note 2)10pF f = 1MHz, All measurements arereferenced to device GND CIO Input/Output Capacitance (Note 2)12pFNOTES:1.Typical derating 5mA/MHz increase in ICCOP.2.Tested at initial design and after major design changes.AC Electrical Specifications V CC = 5V ±10%, T A = -40o C to +85o C (HM-65162S-9, HM-65162B-9, HM65162-9, HM-65162C-9)SYMBOL PARAMETERLIMITSUNITS CONDITIONS HM-65162S-9HM-65162B-9HM-65162-9HM-65162C-9MIN MAX MIN MAX MIN MAX MIN MAXREAD CYCLE(1)TAVAX Read Cycle Time55-70-90-90-ns(Notes 1, 3)(2)TAVQV Address Access Time-55-70-90-90ns(Notes 1, 3, 4)(3)TELQV Chip Enable AccessTime-55-70-90-90ns(Notes 1, 3)(4)TELQX Chip Enable OutputEnable Time5-5-5-5-ns(Notes 2, 3)(5)TGLQV Output Enable AccessTime-35-50-65-65ns(Notes 1, 3)(6)TGLQX Output Enable OutputEnable Time5-5-5-5-ns(Notes 2, 3)(7)TEHQZ Chip Enable OutputDisable Time-35-35-50-50ns(Notes 2, 3)(8)TGHQZ Output Enable OutputDisable Time-30-35-40-40ns(Notes 2, 3)(9)TAVQX Output Hold FromAddress Change5-5-5-5-ns(Notes 1, 3) WRITE CYCLE(10)TAVAX Write Cycle Time55-70-90-90-ns(Notes 1, 3)(11)TELWH Chip Selection to End ofWrite45-45-55-55-ns(Notes 1, 3)(12)TAVWL Address Setup Time5-10-10-10-ns(Notes 1, 3)(13)TWLWH Write Enable PulseWidth40-40-55-55-ns(Notes 1, 3)(14)TWHAX Write Enable ReadSetup Time10-10-10-10-ns(Notes 1, 3)(15)TGHQZ Output Enable OutputDisable Time-30-35-40-40ns(Notes 2, 3)(16)TWLQZ Write Enable OutputDisable Time-30-40-50-50ns(Notes 2, 3)(17)TDVWH Data Setup Time25-30-30-30-ns(Notes 1, 3)(18)TWHDX Data Hold Time10-10-15-15-ns(Notes 1, 3)(19)TWHQX Write Enable OutputEnable Time0-0-0-0-ns(Notes 1, 3)(20)TWLEH Write Enable PulseSetup Time45-40-55-55-ns(Notes 1, 3)(21)TDVEH Chip Enable DataSetup Time25-30-30-30-ns(Notes 1, 3)(22)TAVWH Address Valid to End ofWrite45-50-65-65-ns(Notes 1, 3) NOTES:1.Input pulse levels:0 to 3.0V; Input rise and fall times:5ns (max); Input and output timing reference level:1.5V; Output load:1 TTL gateequivalent and C L = 50pF (min) - for C L greater than 50pF, access time is derated by 0.15ns per pF.2.Tested at initial design and after major design changes.3.V CC =4.5 and5.5V.4.TAVQV = TELQV + TAVEL.。
MITSUBISHI SEMICONDUCTOR PS21562-SP 说明书
INSULATED TYPEINSULATED TYPE2.102.202.001.80—0.602.000.801106.06.5mAV T j = 25°C T j = 125°CI C = 5A, T j = 25°C I C = 5A, T j = 125°C V CE(sat)V EC t on t rr t c(on)t off t c(off)I CESConditionSymbol ParameterLimits Inverter IGBT part (per 1/6 module)Inverter FWD part (per 1/6 module)R th(j-f)Q R th(j-f)FMin.THERMAL RESISTANCETyp.Max.————Unit T j = 25°C, –I C = 5A, V IN = 0V ConditionSymbol ParameterLimits Min.Typ.Max.———0.60——————Unit ELECTRICAL CHARACTERISTICS (T j = 25°C, unless otherwise noted)INVERTER PARTCollector-emitter saturation voltageFWD forward voltageJunction to case thermalresistance (Note 3)V D = V DB = 15V V IN = 5V Switching timesV CC = 300V, V D = V DB = 15VI C = 5A, T j = 125°C, V IN = 0 ↔ 5V Inductive load (upper-lower arm)Collector-emitter cut-off currentV CE = V CES1.601.701.501.200.300.401.300.50——V µs µs µs µs µs °C/W °C/WCONTROL (PROTECTION) PARTNote 4:Short circuit protection is functioning only for the lower-arms. Please select the external shunt resistance such that the SC trip-level isless than 2.0 times of the current rating.5:Fault signal is asserted corresponding to a short circuit or lower side control supply under-voltage failure. The fault output pulse width t FOdepends on the capacitance value of C FO according to the following approximate equation : C FO = 12.2 ✕ 10-6 ✕ t FO [F].SymbolI D V FOHV FOLV SC(ref)I INUV DBtUV DBrUV DtUV Drt FOV th(on)V th(off)ParameterConditionLimits UnitCircuit current Fault output voltageShort circuit trip levelControl supply under-voltage protection Fault output pulse width ON threshold voltage OFF threshold voltage V D = V DB = 15V V IN = 5V T otal of V P1-V NC , V N1-V NC V UFB -V UFS , V VFB -V VFS , V WFB -V WFS V SC = 0V, F O circuit pull-up to 5V with 10k ΩV SC = 1V, I FO = 1mAT f = –20~100°C, V D = 15V (Note 4)V IN = 5VTrip level Reset levelTrip level Reset levelC FO = 22nF (Note 5)Applied between U P , V P , W P -V NC , U N , V N , W N -V NC————4.9—0.451.010.010.510.310.81.02.10.8———————1.5————1.82.31.45.000.407.000.55—0.950.522.012.012.512.513.0—2.62.1Min.Typ.Max.mAV V V mA V V V V ms V V V D = V DB = 15V V IN = 0V Total of V P1-V NC , V N1-V NC V UFB -V UFS , V VFB -V VFS , V WFB -V WFS T j ≤ 125°CNote 3:Grease with good thermal conductivity should be applied evenly with about +100µm~+200µm on the contacting surface of DIP-IPMand heat-sink.Input currentINSULATED TYPEINSULATED TYPEINSULATED TYPEINSULATED TYPEINSULATED TYPE。
LED PAR Hex-18 IP65 用户手册说明书
LED PAR Hex-18 IP65 User ManualLED PAR Hex-18 IP65 .auLED PAR Hex-18 IP65Table of Contents1.Safety instructions (3)1.1Overhead rigging (4)1.2Power Connection (6)1.3Cleaning and Maintenance (6)2.Menu Navigation (7)3.DMX Allocation (9)4.Technical Specifications (12)LED PAR Hex-18 IP651.Safety InstructionsFOR SAFE AND EFFICIENT OPERATIONBe careful with heat and extreme temperature.Avoid exposing it to direct rays of sun near a heating appliance.Do not put it in a temperature below 41°F/5°C, or exceeding 95°F/35°C.Keep away from humidity, water and dust.Do not place the set in a location with a high humidity or lots of dust.Containers with water should not be placed on the set.Keep away from sources of hum and noiseSuch as transformer motor, tuner, TV set and amplifier.To avoid placing on un-stable locationSelect a level and stable location to avoid vibration.Do not use chemicals or volatile liquids for cleaningUse a dry cloth to wipe off the dust, or a wet soft cloth for stubborn dirt.NO USER SERVICABLE PARTS INSIDE.If unit is out of service please contact your point of purchase.If any troubles arise, remove the power plug and contact your Pro Shop representative for repair. Do not open the cabinet by yourself, it might result a danger of electric shock.Take care with the power cable. Never pull the power cable to remove the plug from the receptacle, be sure to hold the plug.LED PAR Hex-18 IP65When not using the unit for an extended period of time be sure to disconnect the plug form the receptacle.1.1.Overhead RiggingThis item must be built in a way that it can hold 10 times more of its weight for 1 hour without causing any damages. The installation must be secured with a secondary safety attachment. The Safety attachment has to be constructed in a way that no part of the installation can fall down. When rigging, de-rigging or servicing the fixture staying in the area below the installation place, on bridges, under high working places and other endangered areas us forbidden. Before taking the device in operation, the installation must be approved by an expert. The operator has to make sure that safety-relating and machine-technical installations are approved by a skilled person once a year.IMPORTANT! OVERHEAD RIGGING REQUIRES EXTENSIVE EXPERIENCE.Including (but not limited to) calculating working load limits, installation material being used, and periodic safety inspection of all installation material and the projector. If you lack these qualifications, do not attempt the installations yourself, but instead use a professional structural rigger. Improper installation can result in bodily injury and/or damage to property.IMPORTANT:If multiple PixPad panels are being rigged together as a larger system, special care must be taken to ensure total loads are adhered to. A maximum of 10 panels should be hung under each other, longer drops require further bracing or load support, please refer to a qualified expert. Horizontally mounted panels should also be picked up from a minimum of every second panel to properly spread the load.LED PAR Hex-18 IP65Use only professional trussing system if the item shall be lowered from the ceiling or high joists. Never let the device swing freely in a room.CAUTION: Overhead Items may cause serious injuries when crashing down!! If there is concern about the safety then DO NOT INSTALL the device.DANGER OF FIRE!When installing the device, make sure there is no highly-flammable material (decoration articles, etc) within a distance of min. 0.5m.Mount the projector with the mounting bracket to your trussing system using an appropriate clamp.For overhead use, always install a safety-rope that can hold at least 10 times the weight of the fixture. You must only use safety –ropes with quick links with screw cap. Pull the safety-rope through the hole in the mounting bracket and over the trussing system or a safe fixation spot. Insert the end in the quick link and tighten the safety screw. The maximum drop distance must never exceed 20cmA safety rope which already held the strain of a crash or which is defective must not be used again.DANGER TO LIFE!Before taking into operation for the first time, the installation has to be approved by an expert.LED PAR Hex-18 IP651.2.Power Connection!! CAUTION !!Never leave this device running unattended!! Every person that is involved with this item has to be qualified!!Connect item with main plug. The voltage and frequency must exactly be the same as stated on the device. The power plug must always be inserted without force.1.3.Cleaning and MaintenancePlease make sure that safety-relating and machine-technical installations are inspected by a skilled person once a year.1.Make sure before installing that all screws are tightly connected and not corroded.2.There must be no deformations on the housings, fixations and installations spots3.No damages must be showed on the power supply cables, material fatigue andsedimentsIf the exterior of the unit is going to be cleaned, please use moist, lint free cloths. Never use alcohol or solvents.The Cooling fan must be cleaned monthly and check to ensure it is free of obstructions.To clean the interior of the device please use a vacuum cleaner or an air jet, however we recommend cleaning the lenses weekly to ensure the best output from your unit.LED PAR Hex-18 IP652.Menu navigationLED PAR Hex-18 IP65LED PAR Hex-18 IP65 3.DMX AllocationLED PAR Hex-18 IP65LED PAR Hex-18 IP65LED PAR Hex-18 IP654.TECHNICAL SPECIFICATIONSPlease note: Information is subject to change without prior notice © Power supply: 100 -240 V AC, 50/60 Hz ~Fuse: N/APower consumption: 154wLight Source: LED 6 IN 1 (10W 120°)Beam Angle: 21.88°Dimensions (LxWxH): 328 x 125.4 x 336.8 mmWeight: 6kgMaximum ambient temperature Ta: 45° CMaximum housing temperature TC (steady state): 50°Please note: Information is subject to change without prior notice ©。
德拉埃特荷尔达PQ引导SP IP65外壳 - 无显示说明书
SPECIFICATIONSvG UIDEPOWER QUALITY ANALYZERThe Best Combination of Value & Technologyin a PQ Analyzer – Safe, Powerful & Intelligent!Dranetz HDPQ® Guide SPIP65 Enclosure - No DisplayDranetz HDPQ® Guide7” Color, Touch DisplayMADE IN USAG UIDE®G UIDE SPMEASURED PARAMETERS(4) Differential Voltage: 16 bit resolution0-1000Vrms, AC/DC, ±0.1 % reading, <40V ±0.5%FSIEC 61000-4-30 Class A: 60-1000Vrms, ±0.1 % of Udin, range ofRange probe dep., AC/DC, +/- 0.1% reading +/- 0.05% FSFrequency:16-25Hz, 42.5-69Hz, +/- 0.01HzCALCULATED PARAMETERSPower/Energy - 1 Second samplingReal Power (W) - P: meets 0.2S requirements, range probe dep.Apparent Power (VA) - S: meets 0.2S requirements, range probe dep.Reactive Power (var) - Q: meets 0.2S requirements, range probe dep.Power Factor (W/VA) -”true” 1 to 0 to -1Displacement PF 1 to 0 to 1Demand (in W): meets 0.2S requirements, range probe dep.Energy (in Wh): meets 0.2S requirements, range probe dep.Distortion - 200ms, 3 sec, 10 min windowsVthd: 0-100%, +/- 5% for V>=1% Vnom,V Ind Harm: DC, 2-127, +/- 5% for V>=1% VnomIthd: 0-100%, +/- 5% for I>=1% Vnom,I Ind Harm: DC, 2-63, +/- 5% for I>=1% VnomMisc.Pst - 10 minutes: 0.2-10, +/- 0.05 @ Pst=1Plt - 2 hours: 0.2-10, +/- 0.05 @ Pst=1EASE OF USE FEATURESAutomatic SetupsPre-programmed monitoring modesAnswerModules®- Sag/Dip Directivity, PF Cap, MotorDashboards - PQ, Demand & EnergySimultaneous PQ, Demand & EnergyMini ReportSTANDARDS COMPLIANCEPower QualityIEC 61000-4-30 Class A: Edition 2 (2008)IEEE 1159: 2009STANDARDS COMPLIANCE (continued) PowerIEEE 1459: 2000HarmonicsIEC 61000-4-7 Class 1: Edition 2 (2008)IEEE 519: 2014Voltage FlickerIEC 61000-4-15: Edition 2 (2010)IEEE 1453: 2011Compliance/TestingEN 50160: 2010GENERAL SPECIFICATIONSDranetz HDPQ GuideSize: (10”w x 8”h x 2.75”d), (25.4cm x 20.3cm x 7.00cm)Weight: 4.2lbs, 2kgOperating temperature: 0 to 50 deg C (32 to 122 deg F)Storage temperature: -20 to 55 deg C (-4 to 122 deg F)Humidity: 10-90% non condensing3 hours run time on full charge, 3 hours charge timeDranetz HDPQ Guide SPSize: (11”w x 6.5”h x 2.5”d), (27.9cm x 16.5cm x 6.4cm)Weight: 3.2lbs, 1.45kgOperating temperature: -10 to 50 deg C (14 to 122 deg F)Storage temperature: -40 to 85 deg C (-40 to 185 deg F)Humidity: 0-95% non condensing15 minutes run time on full charge, 3 hours charge timeClock accuracy and resolutionInternal: +/- 1 sec/day at 25deg CNTP: +/-10 msecGPS: +/-1 msecAC Adapter: 90-264(max) 50/60HzMemory size: 4GBDisplay: 7” WVGA color graphic, Icon based touch LCD, LED Backlit(Guide only)Languages: English, German, Spanish, French, Italian, Swedish, Finn-ish, Polish, Chinese (traditional and simplified), Thai, KoreanCOMMUNICATIONSEthernet, 802.11 b/g/n WirelessUSB On the GoBluetooth via USB adapterVNC remote controlAndroid® & Apple® AppI12-RevAG UIDE SG UIDE SPEasle and Wire ManagementApplicationsWhether your applic ation requires power quality monitoring, demand/energy monitoring, or both, the powerful feature set of the Dranetz HDPQ® Guide family provides you the tools need-ed to get the job done. Dranetz HDPQ Guide instruments are perfec t for applic ations suc h as PQ surveys, fault rec ording, inrush, motor testing, harmonic analysis, advanced distortion analysis, demand/energy/load studies, and much more. The HDPQ Guide and Guide SP offer the exact same measure-ment features, but in different enc losures that c an meet the needs of a wide variety of applications and work environments. The HDPQ Guide is a portable instrument with a built in 7”, Tablet like LCD display. The same local user interface is also available remotely on a PC, Tablet or Smartphone by using the built in Ethernet or Wi-Fi c ommunic ations and Dran-View 7, or a free VNC remote control App. The HDPQ Guide SP offers the same measurement capabilities and communications, but is housed in an IP65 enclosure without an LCD display, greatly expanding applications into outdoor and harsh environments along with those where an LCD display is undesirable.Advan ced PQ & Energy Capabilities!Dranetz products have a long-standing tradition of having state of the art PQ monitoring capabilities, and the Dranetz HDPQ Guide is no exc eption. HDPQ Guide meets and exc eeds the most stringent industry monitoring standards, including:Power Quality - IEC 61000-4-30 Class A, IEEE 1159Harmonics - IEC 61000-4-7, IEEE 519Voltage Flicker - IEC 61000-4-15, IEEE 1453 – Including Pinst Advanced Energy – IEEE 1459Transient CaptureThe Dranetz HDPQ Guide goes well beyond the requirements of the PQ standards by including transient capture capabilities for voltage and current, such as: transients to 32 microseconds, peak sample transients, and advanced waveshape change tran-sients that can identify changes from cycle to cycle.AnswerModules ® – Smart & Good Looking!Only available from Dranetz, AnswerModules are algorithms that automatic ally identify power quality problems and their sourc e. These diagnostic and reporting tools are based on our decades of analytic al experienc e, benc hmarking, and troubleshooting work. The HDPQ Guide has three built in AnswerModules:Sag/Dip Directivity: Automatically identifies the source of a Sag/Dip as being up stream or downstream from the moni-toring source.Capacitor Switching: Automatically identifies transients as being Power Factor correction transients.Motor Analysis: Enables the PQ p arameters that are imp ortant to motor surveys, and provides a custom dashboard for results.G®The Best Combination of Value & Technology in a PQ Analyzer - Safe, Powerful & IntelligentPower Quality instruments are no different than anything else – you get what you pay for – you just get much more from the Dranetz HDPQ ® Guide than with any other instrument in its class!The Dranetz HDPQ ® Guide SP offers the same value, but in a hardened IP65 enclosure.Safe Remote Accessibility via Dran-View ® 7, Apps and VNCDON’T RISK YOUR SAFETY! The Dranetz HDPQ Guide comes with a standard Ethernet port, built-in Wireless, and USB Bluetooth commu-nications that allow you to easily comply with today’s arc flash and other safety standards. Simply install your HDPQ Guide, close the cabinet door, and use your Tablet, Smartphone, PC, or MAC computer to remotely control monitoring and review data. Fully control your instrument remotely, and see exactly what’s on the local 7” display by using Dranview 7 or a free VNC program or App for PC, MAC, Apple and Android devices. Or, you can also use the Dranetz HDPQ App for Apple and Android devices to remotely view a real-time dashboard, scope mode, or remotely configure the instrument using automatic setups. For local access, there’s also a built-in USB port to copy data to a USB drive or directly to your computer using a Plug-N-Play connection.Dashboard Display Demand & Energy TrendEasy to Use Intuitive User InterfaceWith their innovative packaging and 7” wide screen color touch display, the Dranetz HDPQ family of instruments are the most powerful and easiest to use power monitoring instruments available. Like your tablet computer, simply useyour finger or stylus to easily navigate the intuitive, icon-based user interface. Setting up the HDPQ Guide is made easy with automatic setups that detect the cir-cuit type, voltage, etc. and configure the instrument in seconds with typical indus-try settings. For customized setups, use the manual Wizard mode that guides you step-by-step through each setup. During monitoring, real time measurements can be viewed in many ways, including a color-coded reporting Dashboard, and meter/scope/phasor/harmonics displays. Recorded data can be viewed over time by using the timeline and event list displays, and also by using compliance reports, such as EN 50160.Demand & Energy SurveysManaging energy and reducing related expenses is always of par-amount importance, and in many cases is a corporate mandate. In addition to industry-best power quality monitoring capabilities, all of the Dranetz HDPQ family products also have extensive demand and energy monitoring capabilities for both long and short duration surveys. Unlike other lesser capable instru-ments, there’s more than enough horsepower to perform complete PQ and energy surveys simultaneously – it’s your choice to survey for PQ, Energy, or both. Seeing results is easy when using the energy and demand Dashboard reports that display real time and accumulated readings in a color-coded reporting format. There’s also a billing report that includes your energy rates, including time of use. You can also upload your data to our Dran-View 7 software for viewing, reporting, and printing via PC.Reporting & AnalysisThe Dranetz HDPQ Dashboard takes the guess work out of knowing what the instru-ment has recorded. The Dashboard is a color coded alarm panel with boxes that represent different event types (Sags, Swells, Transients, THD, etc.). Each box shows the real time me-tered values for the event type, and is color coded to indicate if events of that type have been recorded.Dran-View ® 7 is our industry leading Win-dows-based software program that enables power professionals to simply and quickly visualize and analyze power monitoring data. Dran-View enhances the Dranetz HDPQ Visa instruments with its VNC remote control, down-loading, and advanced analytical capabilities. It is successfully used by thousands of customers around the world, and has become the industry leading power management software tool. Dran-View is easy to use, yet adds tremendous value and power to our Dranetz HDPQ family of instruments. Of course Dran-View can trend and list data recorded by the instrument, but it also includes a built in report writer, allows you to embed pictures, provides mathematical analy-sis tools, and even includes a rescue kit to help correct connection mistakes.Dran-View ® 7Dranetz HDPQ Live VNC & DownloadDranetz HDPQ Guide SPIP65 Enclosure - No DisplayDranetz HDPQ GuidePortable with 7” DisplayV & I Connections• 1000V CAT III (600V CAT IV)• AC/DC Differential Voltage & Current Inputs • DRANFLEX CT’s powered by the instrumentInnovative Package & Wide Screen7” color, wide screen touch display. 40% largerthan before - the largest in the industry!G UIDE SG UIDE SP。
100820 塑料牌号大全
塑料牌号大全1. 聚苯乙烯(PS)聚苯乙烯树脂（Polystyrene,简称PS）是一种比较古老的树脂品种，由于它具有良好的性能，已经成为世界上应用最广的热塑性树脂，是通用塑料的五大品种之一.聚苯乙烯为无色透明颗粒，无延展性，类似玻璃状材料，制品掉在地面或者敲打时具有清脆的声音，又俗称“响胶”聚苯乙烯易燃，离开火源后继续燃烧，火焰呈橙黄色并有浓烟.燃烧时起泡，软化，并发出特殊的苯乙烯单体味道.聚苯乙烯的密度为1.04到1.09之间.尺寸稳定性好，收缩率在0.4%.吸湿性低，约为0.02%.光学性能相当好，透明度达到88-92%，折光率为1.59-1.60.具有良好的光泽.对其施加压力就产生双折射类应力.聚苯乙烯无色无臭无毒，能自由着色，可以和任何颜料混合.热变形温度为70至98度.导热系数不随温度发生改变.可以作为良好的冷冻绝缘体.在高真空或者330-380度内剧烈降解.介电性能良好，耐水性能也极高，是一种优良的绝缘材料.聚苯乙烯在高频下也有很低的功率因数,耐紫外光性差.项目 GPPS HIPS密度（g/cm3） 1.04-1.09 1.04-1.10硬度（洛氏） 65-80 20-90拉伸强度（Mpa） 34-82 8.5-10.3伸长率（%） 1.0-2.5 2.0-8.0IZOD冲击强度（Kj/m2） 0.5-0.8 0.8-23压缩强度（Mpa） 82-110 27.5-110弯曲强度（Mpa） 46-96.5 34.5-117介电强度（Kv/mm）短暂 500-700 300-600按步 400-600 300-600电阻率（欧*cm） 1017--1019 1016介电常数（F/m） 60HZ 2.45-2.65 2.45-4.751000HZ 2.4-2.65 2.4-4.51000000HZ 2.4-2.65 2.4-3.8耗散因数60HZ 0.0001-0.0003 0.0004-0.002功率因数 1000HZ 0.0001-0.0003 0.0004-0.0021000000HZ 0.0001-0.0004 0.004-0.002耐电弧（s） 60-135 20-100主要出产公司及牌号(GPPS&HIPS)香港石油化学有限公司（HONGKONG PETROL CHEMICAL.CO.LTD）商品名称：Edistir-PS香港陶氏化学太平洋有限公司（DOW CHEMICAL PACIFIC.LTD）商品名称：Styron台湾聚合化学公司（Polychem Co.）商品名称：Polyrex台湾台达化学公司商品名称：Taitastyrene台湾必诠公司台湾国亨化学股份有限公司商品名称：HCG-PS台湾长兴化学工业股份有限公司商品名称：Eterplux-PS台湾高福化学工业股份有限公司商品名称：KF-PS日本电气化学工业有限公司（Denki Kagaku Kogyo Kabushiki Kasha）商品名称：Denka Styrol新日本制铁化学公司（Nippon Steel Chemical Co.,Ltd）商品名称：Estyrene日本出光石油化工有限公司（Idemitsu Petrochemical Co.Ltd.）商品名称：Demitsu Styrol日本旭道公司（Ashai-Dow Limited (Japan)）商品名称：Ashai-Dow日本三菱孟山都化学公司（Mitsubishi Monsanto Chemical Co.）商品名称：Diarex日本住友化学有限公司（Sumitomo Chemical Co.,Ltd.）商品名称：Esbrite大日本油墨化学公司（Dainippon Ink and Chemicals Inc.）商品名称: Dic Styrene日本宇部兴产公司（UBE Industres Ltd.）商品名称：UBE PS美国联合碳化物有限公司（Union Carbide Corporation）商品名称：Bakelite美国科斯登石油化学公司（Cosdenoil &Chemical Company）商品名称：Polysrytene美国孟山都公司（Monsanto Company）商品名称：Lustran美国陶氏化学公司（Dow Chemical Company）商品名称:Styron美国宝蓝山公司（Polysar Company）商品名称:PS Polysar美国斯特弗化学公司（Stauffer Chemical Co.）商品名称:PS德国巴斯夫有限公司（Badische Anilin Soda Fabri K AG）商品名称:Polystyrol德国赫斯化学有限公司（Chemische Werke Huls AG）商品名称:Vestyron德国赫斯特公司（Farbwerke Hoechst AG）商品名称:Hostalen菲律宾石油化工产品公司（Philippine Petrochemical Products Inc.）商品名称: Styrophil马来西亚石油公司（Libyan National Oil Co.）商品名称:Poly-star韩国韩洋化学株式会社（Hanyang Chemical CORP.）商品名称:Hanarene-PS韩国信亚株式会社（Shin-a Corporation）商品名称:Claradex-GPS.HIPS韩国三星综合化学株式会社（Samsung General Chemicals Co..Ltd..）商品名称:Starcs-PS韩国LG化学公司（Engineering Plastics Division）{乐喜公司}商品名称:LUCKY-PS韩国大韩油化工业株式会社（Korea Petrochemical Ind.Co.Ltd..）商品名称:Korea-GPPS-HIPS韩国晓星巴斯夫公司商品名称：BASF-GPPS-HIPS俄罗斯联合化学出口公司（Sojuzchimexport Moscow USSR.）商品名称:GPPS泰国泰长兴化学工业公司（Eternal Resin Co.,Ltd.）商品名称:Eterex-PS墨西哥合成树脂公司（Compound Resin Co.,Ltd.）商品名称:GPPS-HIPS沙特阿拉伯基本工业公司（Saudi Basicindusties Corporation）商品名称:Ladene-PS主要出产公司及牌号(EPS)台湾见龙化学股份有限公司商品名称: EPS台湾明谛化学工业股份有限公司商品名称:EPS台湾高福化学工业有限公司商品名称:EPS台湾原聚工业股份有限公司商品名称:EPS台湾台达化学工业股份有限公司商品名称:EPS台湾名利佳化学股份有限公司商品名称:EPS美国阿科聚合物公司（Arco Polymers Co.,Ltd.）商品名称:Dylene-EPS美国亨兹曼.汉思门公司（Huntsman Chemical CORPORATION Co.）商品名称:HCC-EPS日本积水化学有限公司（Sekisui Chemical Co.,Ltd.）商品名称:Eslen-EPS日本钟渊化学工业公司（Kanegafuchi Chemical Industries Co.,Ltd.）商品名称:Kanepearl-EPS日本三菱油化公司（Mitsubshi Petrochemical Co.,Ltd.）商品名称:Styropr-EPS日本大日本油墨化学公司（Dainippon Ink and Chemical Inc.）商品名称:Ryupearl-EPS]德国巴斯夫公司（Badische Anilin Soda Fabrik.GA）商品名称:Styropor马来西亚巴斯夫（BASF）商品名称:BASF-EPS韩国韩洋化学株式会社（Hanyang Chemicar CORP）商品名称:EPS韩国信亚株式会社（Shin-a Corporation）商品名称:Shinapol-EPS韩国LG化学公司（Engineering Plastic Division）商品名称:LUCKY-EPS韩国晓星巴斯夫公司（Badische Anilin Soda Fabrik.GA）商品名称:Styropor韩国东部化工公司（Dongbu Chemical Co.,Ltd.）商品名称:EPS韩国三星综合化学株式会社（Samsung General Chemicals Co., Ltd.）商品名称:EPS沙特阿拉伯基本工业公司（Saudi Basic Industries Corporation）商品名称Ladene-EPS菲律宾石油化工产品公司（Philippine Petrochemical Products Inc.）商品名称Styrophil-EPS2. 苯乙烯共聚物(ABS)苯乙烯类树脂是指苯乙烯均聚物和与苯乙烯为主要组成的共聚物.苯乙烯是最早工业化（1939年）的塑料品种之一.已经成为世界上仅仅次于聚乙烯，聚氯乙烯的第三大塑料品种.工业上，一般用悬浮聚合和本体聚合制得.由于它具有刚性，透明，耐水和耐化学性能好，特别是具有优秀的电绝缘性和低的吸湿性，价格低廉，易成型加工及着色等特点，广泛用于日用品，装潢，包装，仪器仪表零件及保温材料等领域.聚苯乙烯的主要特点是，机械强度不高，质硬且脆，冲击强度和耐热性差，并且易燃，使其应用受到限制.为了改进这些缺点，采用苯乙烯与其他单体共聚，接枝，或聚苯乙烯与橡胶共混等方法发展了一系列苯乙烯系列改性树脂.重点在于提高其抗冲击性，耐侯性，耐热性，耐应力开裂等性能.其中最有代表性的就是众所周知的丙烯腈（A），丁二烯（B）和苯乙烯（S）三元共聚物（ABS）.它兼具有三种组分的优良性能，因而ABS被人们称为通用级工程塑料.此外，还有AAS（即丙烯腈，丙烯酸酯，苯乙烯组成的热塑性树脂），ACS（丙烯腈，氯化聚乙烯，苯乙烯三种单体组成的树脂.）等改性聚苯乙烯.苯乙烯树脂都是热塑性聚合物，适宜采用注射，挤出，吹塑等成型工艺加工成各种结构的制品，管，棒及薄膜等.其应用领域相当广泛，从日用品，玩具到电讯零件，高频电容器；从家电旋纽到电视机外壳，冰箱壳体.都采用了苯乙烯系列树脂.ABS树脂全名为丙烯腈-丁二烯-苯乙烯树脂（Acrylonitrile Butadiene Styrene）.ABS树脂由三种单体共聚合而成，因此它具有三种组分的协同性能：丙烯腈使聚合物耐化学腐蚀，具有一定的表面硬度；丁二烯使聚合物呈橡胶桩韧性；苯乙烯使聚合物具有刚性和流动性.总之ABS 树脂具有耐热，表面硬度高，尺寸稳定性好，耐化学性和电性能良好，容易加工成型等特点.此外，表面还可以镀铬.改变ABS中的三种组分的比例，可以得到不同性能的树脂.ABS树脂不透明，密度在1.05左右，略重于水，具有坚韧，硬质，刚性等特点.低温冲击性能好是它的另一个显著特点.燃烧时缓慢，离火后继续燃烧，火焰呈黄黑色，燃烧后塑料软化，烧焦，发出特殊气味，没有熔融滴落.大部分ABS都是无毒的，不透水，但是略透水蒸气，吸水率低.项目超高冲击型高强度中冲击型低温冲击型耐热型密度 1.05 1.07 1.02 1.06-1.08吸水率 0.3 0.3 0.2 0.2热变形温度 0.445Mpa 96 98 98 104-1161.81Mpa 87 89 78-85 96-110燃烧性（mm/s）d>12.7mm ---- ---- 0.55 0.55极限拉伸强度（Mpa） 35 63 21-28 53-56屈服拉伸强度（Mpa） ---- ---- 21-28 53-56弯曲强度（Mpa） 62 97 25-46 84弯曲模量（Mpa） 1800 3000 1200-2000 2500-2600洛氏硬度（R） 100 121 62-86 108-116冲击强度(KJ/m2) 23℃ 20 6.0 10-19 6-120℃ ---- ---- 8-12 4-5-40℃ ---- ---- 3-7 0.6-3击穿强度（KV/mm）短时 ---- ---- 15.1-15.7 14.2-15.7电阻率（欧*cm） 1016 1016 1013 1013介电系数60HZ（F/m） 2.4-5.0 2.4-5.0 3.7 2.7-3.5介电损耗60HZ 0.003-0.008 0.003-0.008 0.11-0.073 0.034耐电弧性（s） 50-85 50-85 70-80 70-80主要出产公司及牌号(ABS)台湾奇美实业股份有限公司商业名称:Polyac-ABS台湾台达化学工业股份有限公司(Taita Chemical Co.,Ltd.)商业名称: taitalac台湾国桥石油化学股份有限公司（Grand Pacific Petrochemical Co.）商业名称：ABS台湾大东树脂化学股份有限公司商业名称:爱塑宝-ABS台湾高福化学工业股份有限公司商业名称:Kaofulux-ABS台湾化学纤维股份有限公司（Tairilac Co.,Ltd.）商业名称:ABS日本住友诺格达克公司（Sumitomo Naugatuck Co.,Ltd.）商业名称:Kralastic(Kralosuc)-ABS日本合成橡胶公司（Japan Symtnetic Rubber Co.,Ltd.）商业名称:JSR-ABS日本三菱人造丝公司(Mitsubishi Rayon Co.,Ltd.)商业名称:Shinkolac ABS日本三菱孟山都公司（Mitsubishi Monsanto Chemical Co.,Ltd.）商业名称:Tufrex日本东丽工业公司(Toran Industries Inc.)商业名称:Toyolac ABS美国通用电器公司（GE.Plastics）商业名称:Cycolac ABS美国道化学公司(Dow Chemical Ltd.)商业名称:Magnum ABS德国拜耳公司（Bayer Chemical Co.）商业名称:Novodur德国巴斯夫公司（Badische Anilin Soda Fabrlk GA）商业名称:Terulan ABS意大利艾尼化学公司（Eni Chemical Co.）商业名称:Ravikral (Urtal)荷兰国家矿业公司（DSM Polymers Co.,Ltd.）商业名称:Ronfalin-ABS泰国泰长兴化学工业公司（Eternal Resin Co.,Ltd.）商业名称:Eterex-ABS韩国焊洋化学株式会社(Hanyang Chemical CORP)商业名称:Hanalac-ABS韩国信亚株式会社(Shin-a Corporation)商业名称:Claradex-ABS韩国大焊油化工业株式会社(Korea Petrochemical Ind Co.,Ltd.) 商业名称:Supertect-ABS/PC韩国三星综合化学株式会社(Samsung General Chemical Co.,Ltd.) 商业名称:Starex-ABS韩国晓星东洋公司(Tongyang Nylon Co.,Ltd)韩国LG化学公司（Engineering Plastics Division）商业名称:Lupos-ABS (玻纤增强级)Lupoy-PC/ABS(合金级ABS)主要出产公司及牌号(AS)台湾奇美实业股份有限公司商业名称:Klblsan-AS台湾大东树脂化学股份有限公司商业名称:爱塑先-SAN台湾高福化学工业股份有限公司商业名称:Kaofulux-SAN日本三菱孟山都公司（Mitsubishi Monsanto Chemical Co.）商业名称:Sanrex(Collimate)日本旭化成工业公司(Asahi Chemical Industry Co.,Ltd.)商业名称:Stylac-AS美国道化学公司(Dow Chemical Co.)商业名称:Tyril(Rovel)德国巴斯夫公司(Badische Anilin Soda Fabrik GA)商业名称:SAN-Luran泰国泰长兴化学工业公司(Eternal Resin Co.,Ltd.)商业名称:Eterex-SAN韩国信亚株式会社(Shin-a Corporation)商业名称:Siarex-SAN韩国LG化学公司(Engineering Plastics Division)商业名称:Lucky-SAN (Lupan-SAN玻纤增强级)韩国焊洋化学株式会社(Hanyang Chemical Corp)商业名称:Hanasan-SAN韩国三星综合化学株式会社（Samsung General Chemical Co.,Ltd.）商业名称:Samsung-AS主要出产公司及牌号(SBS)美国菲纳石油化学公司(Fina Oil Chemical Company Co.)商业名称:Fina-SBS美国菲利浦石油公司(Phillips Chemical Company Co.,Ltd)商业名称:K-Resin-k英国壳牌公司(Shell Chemical Co.,Ltd)商业名称:Carflex-SBS美国通用电器公司(GE Plastics)商业名称:Lomod-弹性工程塑料韩国LG化学公司(Engineering Plastics Division)商业名称:Lucky-ASA3. 低密度聚乙烯（LDPE）相对密度为0.910-0.925的聚乙烯称为低密度聚乙烯(Low Density Polyethylene),而密度介于低密度与高密度之间的成为中密度聚乙烯.相反，相对密度低于0.910的聚乙烯；也已经问世.成为甚低密度聚乙烯（VLDPE），甚至还有相对密度小于0.900的，国外也称之为超低密度聚乙烯(ULDPE).虽然聚乙烯的品种繁多，但是左右聚乙烯市场的主要还是低密度聚乙烯和高密度聚乙烯.传统的低密度聚乙烯是用聚合级的乙烯用氧或过氧化物为引发剂，在高温高压下进行游离基聚合而制得的.因此低密度聚乙烯又称做高压聚乙烯.低密度聚乙烯是一种具有蜡感的白色树脂，其结构特点是非线形的.分子量一般在100000~500000.因此，与中密度，高密度聚乙烯相比，它具有较低的结晶度和软化点，有较好的柔软性，伸长率，电绝缘性，透明性，以及较高的耐冲击强度.低密度聚乙烯机械强度较差，耐热性差，此外另一个明显的弱点是耐环境应力开裂性较差.低密度聚乙烯大部分用做薄膜制品，而薄膜制品中大部分用做包装.另外一部分被用做农膜和建筑用膜.低密度聚乙烯包装膜可用于糖果，蔬菜，冷冻食品等食品包装，也可一用做内衬膜，收缩包装膜，弹性包装膜，重包装膜等非食品包装膜.低密度聚乙烯的注塑制品是仅次于薄膜的第二大用途.这些制品包括小型容器，盖，生活用品，玩具等.相当多的低密度聚乙烯用于纸张，纸板，管材，用发泡法生产泡沫塑料，用滚塑法生产大型化工容器和贮槽.低密度聚乙烯还可与其他聚合物共混以改进性能.通过共混可以改善性能的聚合物有PC，PA，PP，HDPE和LLDPE.中密度聚乙烯 (MDPE)应用不如L DPE和HDPE广泛.近几年，由于工艺上的改进，使得MDPE也赋予优良的性能.例如MDPE可以用做蒸煮袋内衬，包装和管材.相对密度低于0.910的VLDPE或ULDPE是聚乙烯的新品种，它们实际上是一种线形短支链结构的聚合物.分子量分布窄，由于其短支链数目比LLDPE还多，因此密度和结晶度比LLDPE和LDPE 还低.用VLDPE可以制得性能优越的包装薄膜，它还可以代替聚氨酯，EVA生产软管，软瓶，盖子内衬和密封圈，它能取代PVC医用软管，取代PVC和LDPE做弹性薄膜和收缩薄膜VLDPE与其他聚烯烃共挤或共混，能赋予材料许多良好的性能.主要出产公司及牌号(LDPE)台湾USI远东公司商业名称:Microthene-LDPE台湾亚洲聚合物公司(Asia Polymer Corp)商业名称:LDPE日本住友化学公司(Sumitomo Chemical Co.)商业名称:Sumikathene LDPE日本三菱石油化工公司(Mitsubishi Petrochemical Co.,Ltd.)商业名称:Yukalon日本石油化学公司(Nippon Petrochemical Co.,Ltd.)商业名称:Rexlon日本电工公司（Showa Denko K.K）日本昭和油化公司(Showa Yuka K.K)日本烯烃化学公司（Olefine Chemical Industries Ltd.）商业名称:Sholex日本旭化成工业株式会社(Asahi Chemical Ind Co.,Ltd.)商业名称:LDPE美国海湾石油公司(Gulf Oil Corporation)商业名称:Polyeth美国杜邦公司(E.I Du Pont de Nemours)商业名称:Alathon PE美国菲利浦石油公司(Phillips Petroleum Company)商业名称:Marlex美国联合碳化物公司加拿大分公司(Union Carbide Corporation)商业名称:Bakelite美国城市服务公司(Cities Service Company)商业名称:Cities Service美国美孚聚合物化学国际有限公司(Mobil Polymers International Ltd.) 商业名称:Mobil德国巴斯夫公司(Badische Anilin &Soda Fabrik GA)商业名称:Lupolen德国奈斯特化学公司(Neste Chemical)商业名称:Neste-LDPE意大利艾尼化学工业公司(Eni Chemical Industries SA)商业名称:Fertene法国碳化学公司(Cdf Chimie)商业名称:Lotrene英国壳牌化学公司(Shell Chemical UK Limited)商业名称:Carlona Shell英国石油化工国际有限公司(BP Chemicals Ltd.)商业名称:Novex荷兰国家矿业公司(DSM Polymers Co.,Ltd)商业名称:Stamylan LDPE新加坡聚烯烃私营有限公司（The Polyolefin Company Pre.Ltd.）商业名称:Cosmothene住友公司新加坡分公司(Sumitomo Chemical Co.)商业名称:Marlex俄罗斯联合化学出口公司(Sojuzchimexport Moscow USSR)商业名称:Soeten捷克和斯洛伐克佩脱莱克斯公司(Petrimex Co.)商业名称:Slovnaft加拿大努发客化学公司商业名称:Novapol-LDPE泰国石油化学工业有限公司(Thai Petrochemical Ind Co.,Ltd)商业名称:Polene卡塔尔石油化工公司(Qatar Petrochemical Co.,Ltd)商业名称:Lotrene阿拉伯联合酋长国沙加石油化工公司(Saga Petrok Jemi A.S &.Co.)商业名称:LDPE奥地利多瑙石化公司(Petrochemie Danubia Ges.m.bH.)商业名称:Daplen-LDPE韩国三星综合化学株式会社(Samsung General Chemicals Co.,Ltd)商业名称:Samsung-LDPE韩国韩洋化学株式会社(Hanyang Chemical CORP)商业名称:Hanyang-LDPE韩国现代石油化学株式会社(Hyundai Petrochemical Co.,Ltd)商业名称:Hyundai-LDPE韩国LG化学公司（Engineering Plastics Division）商业名称:Lucky-LDPE韩国湖南化工公司(Yukong Limited Co.,Ltd)]商业名称:Yuciair-LDPE韩国大韩油化工业株式会社(Korea Petrochemical Ind.Co.,Ltd)商业名称:Yuclair-LDPE韩国油公公司(Yukong Limited)商业名称:Yuclair-MDPE4. 线形低密度聚乙烯(LLDPE)线形低密度聚乙烯（LLDPE）被认为是“第三代聚乙烯”的新品种.线形低密度聚乙烯与普通低密度聚乙烯相比，耗能少，产量高.特别是其物理化学性能比普通低密度聚乙烯要好得多，用途也相当广泛.线形低密度聚乙烯是在有机金属催化剂存在的情况下，使乙烯,а-烯烃（如丙烯，丁烯，辛烯等）进行共聚而产生的.它的分子结构特点是在先行的乙烯主链上带有非常短小的共聚单体支链.支化程度比高压法聚乙烯少，但是比低压法聚乙烯多.因此，通过合理选者适当的催化剂和共聚单体的种类及用量来控制主链的长度和短支链的数量，来达到需要的分子形态.所以在一定程度上说，线形低密度聚乙烯树脂的结构是可以进行分子设计的.主要出产公司及牌号(LDPE)日本三井石油化学工业公司(Mirsui Petrochemical Industries Ltd.)商业名称:Ultzex日本三菱油化公司(Mitsubishi Petrochemical Co.)商业名称:Yukalon-LL日本住友化学工业公司(Sumitomo Chemical Co.)商业名称:Sumikathene-LL美国北方石油化学公司(Northem Petrochemical Company)商业名称:Norlin美国美孚聚合物化学国际有限公司(Mobil Polymers International Ltd.)商业名称:Mobil美国道化学公司(Dow Chemical Company)商业名称:Dowlex美国联合碳化物公司(Union Carbide Corporation)商业名称:C-Resin美国埃克森化学公司(Exxon Chemical Co.)商业名称:Escorene LLDPE法国碳化公司(Caf Chimie Co.)商业名称:Lotrex英国石油化学公司(BP Chemicals Ltd.)商业名称:BP LLDPE沙特阿拉伯沙特基本工业公司(Saudi Basic Industries Co.)商业名称:LADENE加拿大努发克化学公司(Data Sheets For Novapcor)商业名称:Novapcor-LLDPE荷兰国家矿业公司(DSM Polymers Co.,Ltd)商业名称:Stamylex-LLDPE芬兰奈斯特化学公司(Nesteoy chemicals Co.)商业名称:Neste LLDPE韩国韩洋化学株式会社(Hanyang Chemical CORP)商业名称:LLDPE韩国现代石油化学公司(Hyundai Petrochemical Co.,Ltd.)商业名称:LLDPE韩国三星综合化学株式会社(Samsung General Chemicals Co.,Ltd.)商业名称:Samsung-LLDPE韩国LG化学公司(Engineering Plastics Division)商业名称:Lucky-LLDPE韩国大韩油化工业株式会社(Korea Petrochemical Ind.Co.,Ltd)商业名称:Yuclalk-LLDPE韩国油公公司(Yukong Limited Co.)商业名称:Yuclair-LLDPE5. 高密度聚乙烯(HDPE)密度在0.941~0.965的聚乙烯称为高密度聚乙烯（High Density Polyethylene）.高密度聚乙烯用低压法生产，因此有称为低压聚乙烯.生产方式有液相法，气相法两种.液相法又包括了溶液法和淤浆法.高密度聚乙烯有均聚物和共聚物之别，所谓共聚就是在聚合是渗入少量的а-烯烃，这些少量的а-烯烃的加入可以降低聚乙烯的密度和结晶度，因而相对于均聚物来说有更优良的乃环境应力开裂性能，较高的表面硬度和较好的尺寸稳定性.高密度聚乙烯比低密度聚乙烯提高了耐热性和机械强度（如拉伸，弯曲，压缩和剪切强度）并且提高了对水蒸气和气体的阻隔性.高密度聚乙烯可使用挤出法加工成管材，板材，片材，型材和单丝，扁丝，打包带；用吹塑法可以生产大中型中空容器.如瓶，桶及大型工业用贮槽；用注塑法可生产各种制件，日用品和工业用品主要出产公司及牌号(HDPE)日本三菱化成工业公司(Mitsubishi Chemical Industries Limtited)商业名称:Novadec日本三井石油化学工业公司(Mitsui Petrochemical Industries Lts.)商业名称:Hi-Zex日本昭和油化公司(Showa Yuka K.K)日本昭和电工电工公司(Showa Denko K.K)日本烯烃化学公司(Olefine Chemical Industries)商业名称:Sholex日本石油化学公司(Nippon Petrochemical Co.,Ltd.)商业名称:Staflene美国雪普莱克斯公司(Chemplex Company)商业名称:Chemplex美国联合碳化物公司(Union Carbide Corporation)商业名称:Bakelite PF美国菲利浦石油公司(Phillips Petrochemical Company)商业名称:Marlex PE美国城市服务公司(Cities Service Company)商业名称:Cities Service美国美孚聚合物化学国际公司(Mobil polymers International Ltd.)商业名称:Mobil美国埃克森化学公司(Exxon Chemical Co.)商业名称:Escorene HDPE美国阿科化学公司(Arco Chemicals Co.)商业名称: Supcer-Dylau美国菲纳石油化学公司(Fina Oil Chemical Company Co.)商业名称:Fina-HDPE德国巴斯夫公司(Badische Anilin Soda Fabrik GA)商业名称:Lupolen PE德国布纳化工联合公司(VEB Chemiekombinat A.G)商业名称:Buna意大利阿尼克公司杰拉石油工厂(Gela Petrochemical Plant Associated With ANIC)商业名称:Kastilene PE英国壳牌公司(Shell Chemicals UK Limited)商业名称:Carlona PE英国石油化学公司(BP Chemical Ltd.)商业名称:Natene-HDPE加拿大努发克化学公司(Novacor Chemicals Ltd.)商业名称:Novacor荷兰国家矿业公司(DSM Polymers Co.,Ltd.)商业名称:Stamylan-HDPE比利时索尔维公司(Solvay Cie S.A)商业名称:Eltex PE罗马尼亚化工进出口公司商业名称:TO HDPE法国石油化学公司(Napa Chimie Co.)商业名称:Natene法国阿托化学公司(Ato Chemical Co.)商业名称:Lacgtene沙特阿拉伯沙特基本工业公司(Saudi Basic Industries )商业名称:Ladene-HDPE沙特阿拉伯美孚分公司(Mobil Polymers International Ltd.)商业名称:Mobil-Ladene-HDPE南斯拉夫潘石伏石油化工联合公司(Pancevo Petrochemical Gomplex)商业名称:Hiplex捷克布拉格石油化学公司(Chemopetrol Prague Co.,Ltd)商业名称:Liten-HDPE奥地利多瑙石油化工公司(Petrochemie Danubia Ges.m.b.H)商业名称:Daplen-HDPE匈牙利蒂塞-维吉伊化工联合企业(Tiszai Vegyi Kombinat Chemical Complex of Tiszai) 商业名称:Tvk-HDPE新加坡菲利浦石油化工公司(Phillips Petroleum Singapore Chemicals)俄罗斯联合化学出口公司(sojuzchimexport Moscow USSR)商业名称:HDPE韩国LG化学公司(Engineering Plastics Division)商业名称:Lutene-HDPE韩国韩洋化学株式会社(Hanyang Chemical CORP)商业名称:Fine-HDPE韩国三星综合化学株式会社(Samsung General Chemicals Co.,Ltd.)商业名称:HDPE韩国现代石油化学株式会社(Hyundai Petrochemical Co.,Ltd.)商业名称:Hyundai-HDPE韩国大韩油化工业株式会社(Korea Petrochemical Ind.Co.,Ltd.)商业名称:Yuhwa-HDPE韩国九龙化学公司(Gallmox Corporation Co.,Ltd.)商业名称:：HDPE韩国大林工业公司(Daelim Industiral Co.,Ltd.)商业名称:Daelim-HDPE韩国菲利浦石油化工公司(Phillips Petroleum Korea Ltd.)商业名称:Marlex-HDPE韩国湖南石油化学公司(Honam Petrochemicals Co.)商业名称:Honam-HDPE韩国油公公司(Yukong Limited)商业名称:Yuchair-HDPE6. 乙烯-醋酸乙烯酯共聚物(EVA)乙烯-醋酸乙烯酯共聚物(Ethylene Vinyl Acetate)是由乙烯和醋酸乙烯共聚而成，代号是E/VAC，简称EVA。
PS21562-P中文资料
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Intellimod™ ModuleDual-In-Line Intelligent Power Module5 Amperes/600 VoltsPS21562-PDescription:DIP and Mini DIP-IPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry in an ultra compact dual-in-line transfer-mold package for use in driving small three phase motors. Use of 5th generation IGBTs, DIP packaging, and application specific HVICs allow the designer to reduce inverter size and overall design time.Features:£ Compact Packages £ Single Power Supply £ Integrated HVICs£ Direct Connection to CPU Applications:£ Washing Machines £ Refrigerators £ Air Conditioners £ Small Servo Motors £ Small Motor ControlOrdering Information:PS21562-P is a 600V , 5 Ampere Mini DIP Intelligent Power Module.Note: P suffix designates lead-free lead frame.Dimensions InchesMillimeters A 1.93 49.0 B 1.20 30.5 C 0.20 5.0 D 1.82 46.23 E 0.25 6.25 F 0.32 8.0 G 0.14 3.556 H 0.04 1.0 J 0.07 1.778 K 0.02 0.5 L 0.06 1.5 M 0.07 Min. 1.8 Min. N 0.30 0.75 P0.6917.4Dimensions Inches MillimetersQ 0.02 0.5 R 0.41 10.5 S 0.05 1.2 T 0.05 1.25 U 0.10 2.5 V 0.30 7.62 W 0.16 Min. 4.0 Min. X 1.20 30.48 Y 1.61 41.0 Z 1.65 42.0 AA 0.08 Dia. 2.0 Dia. AB 0.13 Dia. 3.3 Dia. AC0.051.25Outline Drawing and Circuit DiagramPowerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272PS21562-PIntellimod™ ModuleDual-In-Line Intelligent Power Module5 Amperes/600 VoltsAbsolute Maximum Ratings, T j = 25°C unless otherwise specifiedCharacteristics Symbol PS21562-P Units Power Device Junction Temperature* T j-20 to 125 °C Module Case Operation T emperature (See T f Measurement Point Illustration) T f-20 to 100 °C Storage Temperature T stg-40 to 125 °C Mounting Torque, M3 Mounting Screws — 8.5 in-lb Module Weight (Typical) — 20 Grams Self-protection Supply Voltage Limit (Short Circuit Protection Capability)** V CC(prot.)400 Volts Isolation Voltage, AC 1 minute, 60Hz Sinusoidal, Connection Pins to Heatsink Plate V ISO2500 Volts *The maximum junction temperature rating of the power chips integrated within the DIP-IPM is 150°C (@T f≤ 100°C). However, to ensure safe operation of the DIP-IPM,the average junction temperature should be limited to T j(avg)≤ 125°C (@T f≤ 100°C).**V D = 13.5 ~ 16.5V, Inverter Part, T j = 125°C, Non-repetitive, Less than 2µsIGBT Inverter SectorCollector-Emitter Voltage V CES600 Volts Collector Current (T f = 25°C) ±I C 5 Amperes Peak Collector Current (T f = 25°C, <1ms) ±I CP10 Amperes Supply Voltage (Applied between P - N) V CC450 Volts Supply Voltage, Surge (Applied between P - N) V CC(surge)500 Volts Collector Dissipation (T f = 25°C, per 1 Chip) P C16.7 WattsControl SectorSupply Voltage (Applied between V P1-V NC, V N1-V NC) V D20 Volts Supply Voltage (Applied between V UFB-V UFS,V VFB-V VFS, V WFB-V WFS) V DB20 Volts Input Voltage (Applied between U P, V P, W P-V NC, U N, V N, W N-V NC) V IN-0.5 ~ V D+0.5 Volts Fault Output Supply Voltage (Applied between F O-V NC) V FO-0.5 ~ V D+0.5 Volts Fault Output Current (Sink Current at F O Terminal) I FO 1 mA Current Sensing Input Voltage (Applied between C IN-V NC) V SC-0.5 ~ V D+0.5 VoltsPowerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272PS21562-PIntellimod™ ModuleDual-In-Line Intelligent Power Module5 Amperes/600 VoltsElectrical and Mechanical Characteristics, T j = 25°C unless otherwise specifiedCharacteristics Symbol Test Conditions Min. Typ. Max. UnitsIGBT Inverter SectorCollector-Emitter Cutoff Current I CES V CE = V CES, T j = 25°C — — 1.00 mAV CE = V CES, T j = 125°C — — 10 mA Diode Forward Voltage V EC T j = 25°C, -I C = 5A, V IN = 0V — 1.50 2.00 Volts Collector-Emitter Saturation Voltage V CE(sat)I C = 5A, T j = 25°C, V D = V DB = 15V, V IN = 5V — 1.60 2.10 VoltsI C = 5A, T j = 125°C, V D = V DB = 15V, V IN = 5V — 1.70 2.20 Volts Inductive Load Switching Times t on0.60 1.20 1.80 µsrr CC D DBC(on)C j INoffC(off)T f Measurement PointPowerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272PS21562-PIntellimod™ ModuleDual-In-Line Intelligent Power Module5 Amperes/600 VoltsElectrical and Mechanical Characteristics, T j = 25°C unless otherwise specifiedCharacteristics Symbol Test Conditions Min. Typ. Max. UnitsControl SectorControl Supply Voltage V D Applied between V P1-V NC, V N1-V NC13.5 15.0 16.5 VoltsV DB Applied between V UFB-V UFS, 13.0 15.0 18.5 VoltsV VFB-V VFS, V WFB-V WFSCircuit Current I D V D = V DB = 15V, V IN = 5V, — — 5.00 mATotal of V P1-V NC, V N1-V NCV D = V DB = 15V, V IN = 0V, — — 7.00 mATotal of V P1-V NC, V N1-V NCV D = V DB = 15V, V IN = 5V, — — 0.40 mAV UFB-V UFS, V VFB-V VFS, V WFB-V WFSV D = V DB = 15V, V IN = 0V, — — 0.55 mAV UFB-V UFS, V VFB-V VFS, V WFB-V WFSFault Output Voltage V FOH V SC = 0V, F O Circuit: 10k Ω to 5V Pull-up 4.9 — — VoltsV FOL V SC = 1V, I FO = 1mA — — 0.95 Volts Input Current I IN V IN = 5V 1.0 1.50 2.00 mA Short-Circuit Trip Level* V SC(ref)T j = 25°C, V D = 15V 0.43 0.48 0.53 Volts Supply Circuit Undervoltage UV DBt T rip Level, T j≤ 125°C 10.0 — 12.0 Volts Protection UV DBr Reset Level, T j≤ 125°C 10.5 — 12.5 VoltsUV Dt Trip Level, T j≤ 125°C 10.3 — 12.5 VoltsUV Dr Reset Level, T j≤ 125°C 10.8 — 13.0 Volts Fault Output Pulse Width** t FO C FO = 22nF 1.0 1.8 — msth(on)P P P NC,th(off)N N N NCThermal CharacteristicsCharacteristic Symbol Condition Min. Typ. Max. Units Junction to Fin R th(j-f)Q IGBT Part (Per 1/6 Module) — — 6.0 °C/Watt Thermal Resistance R th(j-f)D FWDi Part (Per 1/6 Module) — — 6.5 °C/WattRecommended Conditions for UseCharacteristic Symbol Condition Min. Typ. Max. Units Supply Voltage V CC Applied between P-N T erminals 0 300 400 Volts Control Supply Voltage V D Applied between V P1-V NC, V N1-V NC13.5 15.0 16.5 VoltsV DB Applied between V UFB-V UFS,13.0 15.0 18.5 VoltsV VFB-V VFS, V WFB-V WFSControl Supply VariationΔV D, ΔV DB-1 — 1 V/µs PWM Input Frequency f PWM T f ≤ 100°C, T j≤ 125°C — — 20 kHz * Short-Circuit protection is functioning only at the lower arms. Please select the value of the external shunt resistor such that the SC trip level is less than 17A.**Fault signal is asserted when the lower arm short circuit or control supply under-voltage protective functions operate. The fault output pulse-width t FO depends on the capacitance value of C FO according to the following approximate equation: C FO = (12.2 x 10-6) x t FO {F} .PS21562-PIntellimod™ ModuleDual-In-Line Intelligent Power Module 5 Amperes/600 VoltsPowerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272REVERSE RECOVERY CHARACTERISTICS(TYPICAL)EMITTER CURRENT, I E , (AMPERES)R E V E R S E R E C O V E R Y C U R R E N T , I r r , (A M P E R E S )10110010010-1101EMITTER CURRENT, I E , (AMPERES)R E V E R S E R E C O V E R Y T I M E , t r r , (n s )103100102101101COLLECTOR CURRENT, I C , (AMPERES)S W I T C H I N G L O S S , E S W (o n ), (m J /P U L S E )1010010-110-2101SWITCHING LOSS (ON) VS.COLLECTOR CURRENT (TYPICAL)COLLECTOR CURRENT, I C , (AMPERES)S W I T C H I N G L O S S , E S W (o f f ), (m J /P U L S E )1010010-110-2101SWITCHING LOSS (OFF) VS.COLLECTOR CURRENT (TYPICAL)REVERSE RECOVERY CHARACTERISTICS(TYPICAL)EMITTER CURRENT, I E , (AMPERES)E M I T T E R -C O L L E C T O R V O L T A G E , V E C , (V O L T S )FREE-WHEEL DIODEFORWARD CHARACTERISTICS(TYPICAL)08106422.52.01.51.00.50COLLECTOR CURRENT, I C , (AMPERES) C O L L E C T O R -E M I T T E R S A T U R A T I O N V O L T A G E , V C E (s a t ), (V O L T S )COLLECTOR-EMITTERSATURATION VOLTAGE CHARACTERISTICS(TYPICAL)08106422.52.01.51.00.50Recommended Conditions for UseCharacteristicSymbol ConditionMin. Typ. Max. Units Allowable rms Current* I O V CC = 300V , V D = 15V , f C = 5kHz, — — 4.6 Arms PF = 0.8, Sinusoidal, T j ≤ 125°C, T f ≤ 100°CV CC = 300V , V D = 15V , f C = 15kHz, — — 3.2 ArmsPF = 0.8, Sinusoidal, T j ≤ 125°C, T f ≤ 100°CMinimum Input P WIN(on)**0.3 — — µs Pulse WidthP WIN(off)***CC D Between Rated Current 13.0 ≤ V DB ≤ 18.5V , -20°C ≤ T f ≤ 100°C, 0.5 — —µsV NC Variation V NC Between V NC -N (Including Surge) -5.0 — 5.0 Volts Arm Shoot-through t DEADFor Each Input Signal, T f < 100°C1.5——µsBlocking Time* The allowable rms current value depends on the actual application conditions.**If input signal ON pulse is less than P WIN(on), the device may not respond.***The IPM may fail to respond to an ON pulse if the preceeding OFF pulse is less than P WIN(off).Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272PS21562-PIntellimod™ ModuleDual-In-Line Intelligent Power Module5 Amperes/600 VoltsMini DIP-IPM Application Circuit (Shown Pins Up)Component Selection:Dsgn.T yp. Value DescriptionD11A, 600V Boot strap supply diode – Ultra fast recoveryC110-100uF, 50V Boot strap supply reservoir – Electrolytic, long life, low Impedance, 105°C (Note 5)C20.22-2.0uF, 50V Local decoupling/High frequency noise filters – Multilayer ceramic (Note 8)C310-100uF, 50V Control power supply filter – Electrolytic, long life, low Impedance, 105°CC422nF, 50V Fault lock-out timing capacitor – Multilayer ceramic (Note 4)C5100pF, 50V Optional Input signal noise filter – Multilayer ceramic (Note 1)C6200-2000uF, 450V Main DC bus filter capacitor – Electrolytic, long life, high ripple current, 105°CC70.1-0.22uF, 450V Surge voltage suppression capacitor – Polyester/Polypropylene film (Note 9)C SF1000pF, 50V Short circuit detection filter capacitor – Multilayer Ceramic (Note 6, Note 7)R SF 1.8k ohm Short circuit detection filter resistor (Note 6, Note 7)R SHUNT5-100 mohm Current sensing resistor - Non-inductive, temperature stable, tight tolerance (Note 10)R110 ohm Boot strap supply inrush limiting resistor (Note 5)R2330 ohm Optional control input pull-up resistor (Note 1, Note 2)R310k ohm Fault output signal pull-up resistor (Note 3)Notes:1) To prevent input signal oscillations minimize wiring length to controller (∼2cm). Additional RC filtering (C5 etc.) may be required.If filtering is added be careful to maintain proper dead time and voltage levels. See application notes for details.2) Internal HVIC provides high voltage level shifting allowing direct connection of all six driving signals to the controller.3) F O output is an open collector type. Pull-up resistor (R3) should be adjusted to current sink capability of the module.4) C4 sets the fault output duration and lock-out time. C4 ≈ 12.2E-6 x t FO, 22nF gives ∼1.8ms5) Boot strap supply component values must be adjusted depending on the PWM frequency and technique.6) Wiring length associated with R SHUNT, R SF, C SF must be minimized to avoid improper operation of the SC function.7) R SF, C SF set short circuit protection trip time. Recommend time constant is 1.5us-2.0us. See application notes.8) Local decoupling/high frequency filter capacitors must be connected as close as possible to the modules pins.9) The length of the DC link wiring between C6, C7, the DIP’s P terminal and the shunt must be minimized to prevent excessive transient voltages.In particular C7 should be mounted as close to the DIP as possible.10) Use high quality, tight tolorance current sensing resistor. Connect resistor as close as possible to the DIP’s N terminal.Be careful to check for proper power rating. See application notes for calculation of resistance value.。
HY5PS56821F-Y5资料
256Mb DDR2 SDRAM HY5PS56421(L)FHY5PS56821(L)FHY5PS561621(L)FRevision HistoryRev.History Draft Date0.1Initial Release Dec. 20030.2Editorial clean up, changed tRAS spec. for DDR2 400Jan. 2004May 20040.31) Defined IDD Spec.2) Added Speed bins table in AC timming specificationJul. 20041.0Transfered Functional description, command truth table pages and Some contents ofOperating conditions to <Device Operation & timing diagram>Contents1. Description1.1 Device Features and Ordering Information1.1.1 Key Feaures1.1.2 Ordering Information1.1.3 Ordering Frequency1.2 Pin configuration1.3 Pin Description2. Maximum DC ratings2.1 Absolute Maximum DC Ratings2.2 Operating Temperature Condition3. AC & DC Operating Conditions3.1 DC Operating Conditions5.1.1 Recommended DC Operating Conditions(SSTL_1.8)5.1.2 ODT DC Electrical Characteristics3.2 DC & AC Logic Input Levels3.2.1 Input DC Logic Level3.2.2 Input AC Logic Level3.2.3 AC Input Test Conditions3.2.4 Differential Input AC Logic Level3.2.5 Differential AC output parameters3.3 Output Buffer Levels3.3.1 Output AC Test Conditions3.3.2 Output DC Current Drive3.3.3 OCD default chracteristics3.4 IDD Specifications & Measurement Conditions3.5 Input/Output Capacitance4. AC Timing Specifications5. Package Dimensions1.1 Device Features & Ordering Information1.1.1 Key Features•VDD=1.8V•VDDQ=1.8V +/- 0.1V•All inputs and outputs are compatible with SSTL_18 interface•Fully differential clock inputs (CK, /CK) operation•Double data rate interface•Source synchronous-data transaction aligned to bidirectional data strobe (DQS, DQS)•Differential Data Strobe (DQS, DQS)•Data outputs on DQS, DQS edges when read (edged DQ)•Data inputs on DQS centers when write(centered DQ)•On chip DLL align DQ, DQS and DQS transition with CK transition•DM mask write data-in at the both rising and falling edges of the data strobe•All addresses and control inputs except data, data strobes and data masks latched on the rising edges of the clock•Programmable CAS latency 3, 4, 5 and 6 supported•Programmable additive latency 0, 1, 2, 3, 4 and 5 supported•Programmable burst length 4/8 with both nibble sequential and interleave mode•Internal four bank operations with single pulsed RAS•Auto refresh and self refresh supported•tRAS lockout supported•8K refresh cycles /64ms•JEDEC standard 60ball FBGA(x4/x8) & 84ball FBGA(x16)•Full strength driver option controlled by EMRS•On Die Termination supported•Off Chip Driver Impedance Adjustment supported•Read Data Strobe suupported (x8 only)•Self-Refresh High Temperature Entry Ordering InformationPart No.Configuration Package HY5PS56421(L)F-X*64Mx460BallFBGA HY5PS56821(L)F-X*32Mx8HY5PS561621(L)F-X*16Mx1684BallFBGA Operating FrequencyGrade tCK(ns)CL tRCD tRP Unit -E35333Clk -E45444Clk -C4 3.75444Clk -C5 3.75555Clk -Y53555Clk -Y63666ClkFrequency table for complete Part No.1.2 Pin Configuration & Address Table 64Mx4 DDR2 Pin Configuration3VSS DM VDDQ DQ3VSS WE BA1A1A5A9NC2NC VSSQ DQ1VSSQ VREF CKEBA0A10A3A7A121VDD NC VDDQ NC VDDLNC VSS VDD A B C D E F G H J K L7VSSQ DQS VDDQ DQ2VSSDL RAS CAS A2A6A11NC8DQS VSSQ DQ0VSSQ CK CK CS A0A4A8A139VDDQ NC VDDQ NC VDD ODTVDDVSSROW AND COLUMN ADDRESS TABLEITEMS64Mx4# of Bank 4Bank Address BA0, BA1Auto Precharge FlagA10/AP Row Address A0 - A12Column AddressA0-A9, A11Page size1 KB32Mx8 DDR2 PIN CONFIGURATION3VSS DM, RDQS VDDQ DQ3VSS WE BA1A1A5A9NC2NU, RDQS VSSQ DQ1VSSQ VREF CKEBA0A10A3A7A121VDD DQ6VDDQ DQ4VDDLNC VSS VDD A B C D E F G H J K L7VSSQ DQS VDDQ DQ2VSSDL RAS CAS A2A6A11NC8DQS VSSQ DQ0VSSQ CK CK CS A0A4A8A139VDDQ DQ7VDDQ DQ5VDD ODTVDDVSSROW AND COLUMN ADDRESS TABLEITEMS32Mx8# of Bank 4Bank Address BA0, BA1Auto Precharge FlagA10/AP Row Address A0 - A12Column AddressA0-A9Page size1 KB16Mx16 DDR2 PIN CONFIGURATION3VSS UDM VDDQ DQ11VSS WE BA1A1A5A9NC2NC VSSQ DQ9VSSQ VREF CKEBA0A10A3A7A121VDD DQ14VDDQ DQ12VDDLNC VSS VDD A B C D J K L M N P R7VSSQ UDQS VDDQ DQ10VSSDL RAS CAS A2A6A11NC8UDQS VSSQ DQ8VSSQ CK CK CS A0A4A8NC9VDDQ DQ15VDDQ DQ13VDD ODTVDDVSSVSS LDM VDDQ DQ3NC VSSQ DQ1VSSQ VDD DQ6VDDQ DQ4E F G H VSSQ LDQS VDDQ DQ2LDQS VSSQ DQ0VSSQ VDDQ DQ7VDDQ DQ5ROW AND COLUMN ADDRESS TABLEITEMS16Mx16# of Bank 4Bank Address BA0, BA1Auto Precharge FlagA10/AP Row Address A0 - A12Column AddressA0-A8Page size1 KB1.3 PIN DESCRIPTIONPIN TYPE DESCRIPTIONCK, CK Input Clock: CK and CK are differential clock inputs. All address and control input signals are sampled on the crossing of the positive edge of CK and negative edge of CK. Output (read) data is refer-enced to the crossings of CK and CK (both directions of crossing).CKE Input Clock Enable: CKE HIGH activates, and CKE LOW deactivates internal clock signals, and device input buffers and output drivers. Taking CKE LOW provides PRECHARGE POWER DOWN and SELF REFRESH operation (all banks idle), or ACTIVE POWER DOWN (row ACTIVE in any bank). CKE is synchronous for POWER DOWN entry and exit, and for SELF REFRESH entry. CKE is asyn-chronous for SELF REFRESH exit. After V REF has become stable during the power on and initial-ization sequence, it must be maintained for proper operation of the CKE receiver. For proper self-refresh entry and exit, V REF must be maintained to this input. CKE must be maintained high throughout READ and WRITE accesses. Input buffers, excluding CK, CK and CKE are disabled during POWER DOWN. Input buffers, excluding CKE are disabled during SELF REFRESH.CS Input Chip Select : All commands are masked when CS is registered HIGH. CS provides for external bank selection on systems with multiple banks. CS is considered part of the command code.ODT Input On Die Termination Control : ODT(registered HIGH) enables on die termination resistance inter-nal to the DDR2 SDRAM. When enabled, ODT is only applied to DQ, DQS, DQS, RDQS, RDQS, and DM signal for x4,x8 configurations. For x16 configuration ODT is applied to each DQ, UDQS/UDQS.LDQS/LDQS, UDM and LDM signal. The ODT pin will be ignored if the Extended Mode Register(EMRS(1)) is programmed to disable ODT.RAS, CAS, WE Input Command Inputs: RAS, CAS and WE (along with CS) define the command being entered.DM (LDM, UDM)InputInput Data Mask : DM is an input mask signal for write data. Input Data is masked when DM issampled High coincident with that input data during a WRITE access. DM is sampled on bothedges of DQS, Although DM pins are input only, the DM loading matches the DQ and DQS load-ing. For x8 device, the function of DM or RDQS/ RDQS is enabled by EMRS command.BA0 - BA2Input Bank Address Inputs: BA0 - BA2 define to which bank an ACTIVE, Read, Write or PRECHARGE command is being applied(For 256Mb and 512Mb, BA2 is not applied). Bank address also deter-mines if the mode register or extended mode register is to be accessed during a MRS or EMRS cycle.A0 -A15Input Address Inputs: Provide the row address for ACTIVE commands, and the column address and AUTO PRECHARGE bit for READ/WRITE commands to select one location out of the memory array in the respective bank. A10 is sampled during a precharge command to determine whether the PRECHARGE applies to one bank (A10 LOW) or all banks (A10 HIGH). If only one bank is to be precharged, the bank is selected by BA0-BA2. The address inputs also provide the op code during MODE REGISTER SET commands.DQ Input/Output Data input / output : Bi-directional data bus DQS, (DQS)(UDQS),(UDQS) (LDQS),(LDQS) (RDQS),(RDQS)Input/OutputData Strobe : Output with read data, input with write data. Edge aligned with read data, cen-tered in write data. For the x16, LDQS correspond to the data on DQ0~DQ7; UDQS correspondsto the data on DQ8~DQ15. For the x8, an RDQS option using DM pin can be enabled via theEMRS(1) to simplify read timing. The data strobes DQS, LDQS, UDQS, and RDQS may be used insingle ended mode or paired with optional complementary signals DQS, LDQS,UDQS and RDQSto provide differential pair signaling to the system during both reads and wirtes. An EMRS(1)control bit enables or disables all complementary data strobe signals.In this data sheet, "differential DQS signals" refers to any of the following with A10 = 0 ofEMRS(1)x4 DQS/DQSx8 DQS/DQS if EMRS(1)[A11] = 0x8 DQS/DQS, RDQS/RDQS, if EMRS(1)[A11] = 1x16 LDQS/LDQS and UDQS/UDQS"single-ended DQS signals" refers to any of the following with A10 = 1 of EMRS(1)x4 DQSx8 DQS if EMRS(1)[A11] = 0x8 DQS, RDQS, if EMRS(1)[A11] = 1x16 LDQS and UDQS-Continue-PIN TYPE DESCRIPTIONNC No Connect : No internal electrical connection is present.V DDQ Supply DQ GroundVSSQ Supply DQ Power Supply : 1.8V +/- 0.1VV DDL Supply DLL Power Supply : 1.8V +/- 0.1VV SSDL Supply DLL GroundVDD Supply Power Supply : 1.8V +/- 0.1VV SS Supply GroundV REF Supply Reference voltage for inputs for SSTL interface.2.1 Absolute Maximum DC Ratings2.2 Operating Temperature ConditionSymbol ParameterRating Units Notes VDD Voltage on VDD pin relative to Vss - 1.0 V ~ 2.3 V V 1VDDQ Voltage on VDDQ pin relative to Vss - 0.5 V ~ 2.3 V V 1VDDL Voltage on VDDL pin relative to Vss - 0.5 V ~ 2.3 V V 1V IN , V OUT Voltage on any pin relative to Vss - 0.5 V ~ 2.3 V V1T STGStorage Temperature-55 to +100°C 1, 21..Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is astress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reli-ability.2.Storage Temperature is the case surface temperature on the denter/top side of the DRAM. For the measurement conditions. Please refer to JESD51-2 standard.Symbol ParameterRating UnitsNotesToperOperating Temperature0 to 85°C 1,21.Operating Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51-2 standard.2.The operatin temperature range are the temperature where all DRAM specification will be supported. Outside of this temperature rang, even it is still within the limit of stress condition, some deviation on portion of operation specification may be required. During operation, the DRAM case temperature must be maintained between 0 ~ 85°C under all other specification parameters. However, in some applications, it is desirable to operate the DRAM up to 95°C case temperature. Therefore 2 spec options may exist.1) Supporting 0 - 85°C with full JEDEC AC & DC specifications. This is the minimum requirements for all oprating temperatureoptions.2) Supporting 0 - 85°C and being able to extend to 95°C with doubling auto-refresh commands in frequency to a 32 msperiod(tRFI=3.9us).Note; Currently the periodic Self-Refresh interval is hard coded within the DRAM to a specificic value.There is a migration plan to support higher temperature Self-Refresh entry via the control of EMRS(2) bit A7. However, sinceSelf-Refresh control function is a migrated process. For our DDR2 module user, it is imperative to check SPD Byte 49 Bit 0 to ensure the DRAM parts support higer than 85°C case temperature Self-Refresh entry.1) if SPD Byte 49 Bit 0 is a “0” means DRAM does not support Self-Refresh at higher than 85°C, then system have to ensurethe DRAM is at or below 85°C case temperature before initiating Self-Refresh operation.2) if SPD Byte 49 Bit 0 is a “1” means DRAM supports Self-Refresh at higher than 85°C case temperature, then system canuse register bit A7 at EMRS(2) control DRAM to operate at proper Self-Refresh rate for higher temperature. Please also refer to EMRS(2) register definition section and DDR2 DIMM SPD definition for details.3.1 DC Operating Conditions3.1.1 Recommended DC Operating Conditions (SSTL_1.8)3.1.2 ODT DC electrical characteristicsNote 1: Test condition for Rtt measurements Note 2: Optional for DDR2-400/533/667Measurement Definition for Rtt(eff):Apply V IH (ac) and V IL (ac) to test pin separately, then measure current I(V IH(ac)) and I( V IL (ac)) respectively. V IH (ac), V IL (ac), and VDDQ values defined in SSTL_18Measurement Definition for VM :Measurement Voltage at test pin(mid point) with no load.Symbol ParameterRatingUnits NotesMin.Typ. Max.VDD Supply Voltage 1.7 1.8 1.9V VDDL Supply Voltage for DLL 1.7 1.8 1.9V 4VDDQ Supply Voltage for Output 1.7 1.8 1.9V 4VREF Input Reference Voltage 0.49*VDDQ 0.50*VDDQ 0.51*VDDQ mV 1, 2VTTTermination VoltageV REF -0.04V REFV REF +0.04V3There is no specific device VDD supply voltage requirement for SSTL-1.8 compliance. However under all conditions VDDQ must be less than or equal to VDD.1.The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the value of VREF is expected to be about 0.5 x VDDQ of the transmitting device and VREF is expected to track variations in VDDQ.2.Peak to peak ac noise on VREF may not exceed +/-2% VREF (dc).3.VTT of transmitting device must track VREF of receiving device.4.VDDQ tracks with VDD, VDDL tracks with VDD. AC parameters are measured with VDD, VDDQ and VDDDL tied togetherPARAMETER/CONDITIONSYMBOLMINNOMMAXUNITS NOTESRtt effective impedance value for EMRS(A6,A2)=0,1; 75 ohm Rtt1(eff)607590ohm 1Rtt effective impedance value for EMRS(A6,A2)=1,0; 150 ohm Rtt2(eff)120150180ohm 1Rtt effective impedance value for EMRS(A6,A2)=1,1; 550 ohm Rtt2(eff)405060ohm 1,2Deviation of V M with respect to VDDQ/2delta VM -6+6%1delta VM =2 x Vm VDDQx 100%- 13. AC & DC Operating ConditonsRtt(eff) =V IH (ac) - V IL (ac)I(V IH (ac)) - I(V IL (ac))3.2.1 Input DC Logic Leve l3.2.2 Input AC Logic Level3.2.3 AC Input Test ConditionsNotes:1.Input waveform timing is referenced to the input signal crossing through the V REF level applied to the device under test.2.The input signal minimum slew rate is to be maintained over the range from V REF to V IH(ac) min for rising edges and the range from V REF to V IL(ac) max for falling edges as shown in the below figure.3.AC timings are referenced with input waveforms switching from VIL(ac) to VIH(ac) on the positive transitions and VIH(ac) to VIL(ac) on the negative transitions.Symbol ParameterMin.Max.Units NotesV IH (dc)dc input logic high V REF + 0.125V DDQ + 0.3V V IL (dc)dc input logic low- 0.3V REF - 0.125VSymbol ParameterMin.Max.Units NotesV IH (ac)ac input logic high V REF + 0.250-V V IL (ac)ac input logic low-V REF - 0.250VSymbol ConditionValue UnitsNotesV REFInput reference voltage0.5 * V DDQ V 1V SWING(MAX)Input signal maximum peak to peak swing 1.0V 1SLEW Input signal minimum slew rate1.0V/ns2, 3V DDQV IH(ac) min V IH(dc) min V REF V IL(dc) max V IL(ac) max V SSV SWING(MAX)delta TRdelta TFV REF - V IL (ac) maxdelta TFFalling Slew =Rising Slew =V IH (ac)min - V REFdelta TR3.2 DC & AC Logic Input Levels< Figure : AC Input Test Signal Waveform>3.2.4 Differential Input AC logic Level1. V IN(DC) specifies the allowable DC execution of each input of differential pair such as CK, CK, DQS, DQS, LDQS, LDQS, UDQS and UDQS.2. V ID(DC ) specifies the input differential voltage |V TR -V CP | required for switching, where V TR is the true input (such as CK, DQS, LDQS or UDQS) level and V CP is the complementary input (such as CK, DQS, LDQS or UDQS) level. The minimum value is equal to V IH(DC) - V IL(DC).Notes:1. V ID(AC) specifies the input differential voltage |V TR -V CP | required for switching, where V TR is the true input signal (such as CK, DQS, LDQS or UDQS) and V CP is the complementary input signal (such as CK, DQS, LDQS or UDQS). The minimum value is equal to V IH(AC) - V IL(AC).2. The typical value of V IX(AC) is expected to be about 0.5 * VDDQ of the transmitting device and V IX(AC) is expected to track variations in VDDQ . V IX(AC) indicates the voltage at which differential input signals must cross.3.2.5 Differential AC output parametersNotes:1. The typical value of V OX(AC) is expected to be about 0.5 * V DDQ of the transmitting device and V OX(AC ) is expected to track variations in VDDQ . V OX(AC) indicates the voltage at whitch differential output signals must cross.Symbol ParameterMin.Max.Units Notes V ID (ac)ac differential input voltage 0.5V DDQ + 0.6V 1V IX (ac)ac differential cross point voltage0.5 * VDDQ - 0.1750.5 * VDDQ + 0.175V2Symbol ParameterMin.Max.Units Notes V OX (ac)ac differential cross point voltage0.5 * VDDQ - 0.1250.5 * VDDQ + 0.125V1V DDQCrossing pointV SSQV TR V CPV IDV IX or V OX< Differential signal levels >3.3 Output Buffer Characteristics3.3.1 Output AC Test Conditions3.3.2 Output DC Current Drive3.3.3 OCD defalut characteristicsNote 1: Absolute Specifications (0°C ≤ T CASE ≤ +tbd°C; VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V)Note 2: Impedance measurement condition for output source dc current: VDDQ = 1.7V; VOUT = 1420mV; (VOUT-VDDQ)/Ioh must be less than 23.4 ohms for values of VOUT between VDDQ and VDDQ-280mV. Impedance measurement condition for output sink dc current: VDDQ = 1.7V; VOUT = 280mV; VOUT/Iol must be less than 23.4 ohms for values of VOUT between 0V and 280mV.Note 3: Mismatch is absolute value between pull-up and pull-dn, both are measured at same temperature and voltage.Note 4: Slew rate measured from vil(ac) to vih(ac).Note 5: The absolute value of the slew rate as measured from DC to DC is equal to or greater than the slew rate as measured from AC to AC. This is guaranteed by design and characterization.Note 6: This represents the step size when the OCD is near 18 ohms at nominal conditions across all process corners/variations and represents only the DRAM uncertainty. A 0 ohm value(no calibration) can only be achieved if the OCD impedance is 18 ohms +/- 0.75 ohms under nominal conditions.Symbol ParameterSSTL_18 Class IIUnits Notes V OTROutput Timing Measurement Reference Level0.5 * V DDQV11.The VDDQ of the device under test is referenced.Symbol ParameterSSTl_18Units Notes I OH(dc)Output Minimum Source DC Current - 13.4mA 1, 3, 4I OL(dc)Output Minimum Sink DC Current13.4mA2, 3, 41.V DDQ = 1.7 V; V OUT = 1420 mV. (V OUT - V DDQ )/I OH must be less than 21 ohm for values of V OUT between V DDQ and V DDQ - 280 mV.2.V DDQ = 1.7 V; V OUT = 280 mV. V OUT /I OL must be less than 21 ohm for values of V OUT between 0 V and 280 mV.3.The dc value of V REF applied to the receiving device is set to V TT4.The values of I OH(dc) and I OL(dc) are based on the conditions given in Notes 1 and 2. They are used to test device drive current capability to ensure V IH min plus a noise margin and V IL max minus a noise margin are delivered to an SSTL_18 receiver. The actual current values are derived by shifting the desired driver operating point (see Section 3.3) along a 21 ohm load line to define a convenient driver current for measurement.DescriptionParameterMin Nom Max Unit Notes Output impedance12.61823.4ohms 1,2Output impedance step size for OCD cali-bration0 1.5ohms 6Pull-up and pull-down mismatch 04ohms 1,2,3Output slew rateSout 1.5-5V/ns1,4,5,6,7,8Output Slew rate load:Note 7: DRAM output slew rate specification applies to 400MT/s & 533MT/s speed bins.Note 8: Timing skew due to DRAM output slew rate mis-match between DQS / DQS and associated DQs is included in tDQSQ and tQHS specification.IDD Specifications(max)SymbolDDR2 400DDR2 533DDR2 667Units x4x8x16x4x8x16x4x8x16IDD0100105110110115120120125130mA IDD1110115120120125130130135140mA IDD2P555555555mA IDD2Q404040454545505050mA IDD2N505050555555606060mA IDD3PF303030303030303030mAS202020202020202020mA IDD3N657075758085808595mA IDD4W165175185190210220230250260mA IDD4R160170180185205215225245255mA IDD5150150150160160160170170170mAIDD6Nor-mal444444444mALowpower222222222mAIDD7230250270240260280250270290mA 3.4 IDD Specifications & Test ConditionsIDD Test Conditions(IDD values are for full operating range of Voltage and Temperature, Notes 1-5)Note:1. IDD specifications are tested after the device is properly initialized2. Input slew rate is specified by AC Parametric Test Condition3. IDD parameters are specified with ODT disabled.4. Data bus consists of DQ, DM, DQS, DQS, RDQS, RDQS, LDQS, LDQS, UDQS, and UDQS. IDD values must be met with all combina-tions of EMRS bits 10 and 11.5. Definitions for IDD LOW is defined as Vin ≤ VILAC(max) HIGH is defined as Vin ≥ VIHAC(min)STABLE is defined as inputs stable at a HIGH or LOW level FLOATING is defined as inputs at VREF = VDDQ/2 SWITCHING is defined as:inputs changing between HIGH and LOW every other clock cycle (once per two clocks) for address and control signals, and inputs changing between HIGH and LOW every other data transfer (once per clock) for DQ signals not including masks or strobes.Symbol ConditionsUnitsIDD0Operating one bank active-precharge current ; t CK = t CK(IDD), t RC = t RC(IDD), t RAS = t RAS min(IDD) ; CKE is HIGH, CS is HIGH between valid commands;Address bus inputs are SWITCHING;Data bus inputs are SWITCHINGmAIDD1Operating one bank active-read-precharge curren ; IOUT = 0mA;BL = 4, CL = CL(IDD), AL = 0;t CK = t CK(IDD), t RC = t RC (IDD), t RAS = t RASmin(IDD), t RCD = t RCD(IDD) ; CKE is HIGH, CS is HIGH between valid commands ; Address bus inputs are SWITCHING ; Data pattern is same as IDD4WmAIDD2P Precharge power-down current ; All banks idle ; t CK = t CK(IDD) ; CKE is LOW ; Other control and address bus inputs are STABLE; Data bus inputs are FLOATINGmAIDD2Q Precharge quiet standby current ;All banks idle; t CK = t CK(IDD);CKE is HIGH, CS is HIGH; Other control and address bus inputs are STABLE; Data bus inputs are FLOATINGmAIDD2NPrecharge standby current ; All banks idle; t CK = t CK(IDD); CKE is HIGH, CS is HIGH; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING mA IDD3PActive power-down current ; All banks open; t CK = t CK(IDD); CKE is LOW; Other control and address bus inputs are STABLE; Data bus inputs are FLOATINGFast PDN Exit MRS(12) = 0mA Slow PDN Exit MRS(12) = 1mAIDD3NActive standby current ; All banks open; t CK = t CK(IDD), t RAS = t RASmax(IDD), t RP =t RP(IDD); CKE is HIGH, CS is HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHINGmAIDD4W Operating burst write current ; All banks open, Continuous burst writes; BL = 4, CL = CL(IDD), AL = 0; t CK = t CK(IDD), t RAS = t RASmax(IDD), t RP = t RP(IDD); CKE is HIGH, CS is HIGH between valid commands; Address bus inputs are SWITCHING; Data bus inputs are SWITCHINGmAIDD4R Operating burst read current ; All banks open, Continuous burst reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL = 0; t CK = t CK(IDD), t RAS = t RASmax(IDD), t RP = t RP(IDD); CKE is HIGH, CS is HIGH between valid commands; Address bus inputs are SWITCHING;; Data pattern is same as IDD4WmAIDD5BBurst refresh current ; t CK = t CK(IDD); Refresh command at every t RFC(IDD) interval; CKE is HIGH, CS is HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHINGmAIDD6Self refresh current ; CK and CK at 0V; CKE ≤ 0.2V; Other control and address bus inputs are FLOATING; Data bus inputs are FLOATINGmAIDD7Operating bank interleave read current ; All bank interleaving reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL = t RCD(IDD)-1*t CK(IDD); t CK = t CK(IDD), t RC = t RC(IDD), t RRD = t RRD(IDD), t RCD = 1*t CK(IDD); CKE is HIGH, CS is HIGH between valid commands; Address bus inputs are STABLE during DESELECTs; Data pat-tern is same as IDD4R; - Refer to the following page for detailed timing conditionsmAFor purposes of IDD testing, the following parameters are to be utilizedDDR2-667DDR2-533DDR2-400Parameter5-5-56-6-64-4-45-5-53-3-34-4-4UnitsCL(IDD)564534tCKt RCD(IDD)15181518.751520nst RC(IDD)60636063.755565ns t RRD(IDD)-x4/x87.57.57.57.57.57.5nst RRD(IDD)-x169910101010ns t CK(IDD)33 3.75 3.7555ns t RASmin(IDD)454545454045nst RASmax(IDD)700007000070000700007000070000ns t RP(IDD)15181518.751520ns t RFC(IDD)-256Mb757575757575nst RFC(IDD)-512Mb105105105105105105nst RFC(IDD)-1Gb127.5127.5127.5127.5127.5127.5nst RFC(IDD)-2Gb197.5197.5197.5197.5197.5197.5ns Detailed IDD7The detailed timings are shown below for IDD7. Changes will be required if timing parameter changes are made to the specification. Legend: A = Active; RA = Read with Autoprecharge; D = DeselectIDD7: Operating Current: All Bank Interleave Read operationAll banks are being interleaved at minimum t RC(IDD) without violating t RRD(IDD) using a burst length of 4. Control and address bus inputs are STABLE during DESELECTs. IOUT = 0mATiming Patterns for 4 bank devices x4/ x8/ x16-DDR2-400 4/4/4: A0 RA0 A1 RA1 A2 RA2 A3 RA3 D D D D D-DDR2-400 3/3/3: A0 RA0 A1 RA1 A2 RA2 A3 RA3 D D D D-DDR2-533 5/4/4: A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D D D D-DDR2-533 4/4/4: A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D D D DTiming Patterns for 8 bank devices x4/8-DDR2-400 all bins: A0 RA0 A1 RA1 A2 RA2 A3 RA3 A4 RA4 A5 RA5 A6 RA6 A7 RA7-DDR2-533 all bins: A0 RA0 A1 RA1 A2 RA2 A3 RA3 D D A4 RA4 A5 RA5 A6 RA6 A7 RA7 D DTiming Patterns for 8 bank devices x16-DDR2-400 all bins: A0 RA0 A1 RA1 A2 RA2 A3 RA3 D D A4 RA4 A5 RA5 A6 RA6 A7 RA7 D D-DDR2-533 all bins: A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D D A4 RA4 D A5 D A6 RA6 D A7 RA7 D D D3.5. Input/Output Capacitance4. Electrical Characteristics & AC Timing Specification( 0 ℃ ≤ T CASE ≤ 95℃; V DDQ = 1.8 V +/- 0.1V; V DD = 1.8V +/- 0.1V)Refresh Parameters by Device DensityDDR2 SDRAM speed bins and tRCD, tRP and tRC for corresponding binNote 1: 8 bank device Precharge All Allowance : tRP for a Precharge All command for and 8 Bank device will equal to tRP+1*tCK, where tRP are the values for a single bank prechrarge, which are shown in the above table.Parameter Symbol DDR2 400DDR2 533DDR2 667DDR2 800UnitsMinMax Min Max Input capacitance, CK and CK CCK 1.0 2.0 1.0 2.0pF Input capacitance delta, CK and CK CDCK x 0.25x 0.25pF Input capacitance, all other input-only pins CI 1.0 2.0 1.0 2.0pF Input capacitance delta, all other input-only pins CDI x 0.25x 0.25pF Input/output capacitance, DQ, DM, DQS, DQS CIO 2.5 4.0 2.5 3.5pF Input/output capacitance delta, DQ, DM, DQS, DQSCDIOx0.5x0.5pFParameterSymbol256Mb 512Mb1Gb2Gb4GbUnitsRefresh to Active/Refresh commandtime tRFC75105127.5195327.5ns Average periodic refresh intervaltREFI0 ℃≤T CASE ≤ 95℃7.87.87.87.87.8ns 85℃＜T CASE ≤ 95℃3.93.93.93.93.9nsSpeedDDR2-667DDR2-533DDR2-533DDR2-533DDR2-400DDR2-400UnitsBin(CL-tRCD-tRP)4-4-43-3-34-4-45-5-53-3-34-4-4Parameter min min min min min min CAS Latency434534tCK tRCD 1211.251518.751520ns tRPNote11211.251518.751520ns tRAS 454545454040ns tRC5756.256063.755565ns。
IRS21864STRPbF中文资料
Data Sheet No. PD60271HIGH AND LOW SIDE DRIVER Features•Floating channel designed for bootstrap operation•Fully operational to +600 V•Tolerant to negative transient voltage, dV/dtimmune•Gate drive supply range from 10 V to 20 V•Undervoltage lockout for both channels•3.3 V and 5 V input logic compatible•Matched propagation delay for both channels•L ogic and power ground +/- 5V offset.•L ower di/dt gate driver for better noise immunity•Output source/sink current capability 4 A/4 A•RoHS compliantIRS2186/IRS21864(S)PbF 1DescriptionThe IRS2186/IRS21864 are high voltage, high speed power MOSFET and IGBT drivers with independent high-side and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600 V.Packages8-L ead PDIPIRS218614-Lead PDIP IRS2186414-Lead SOIC IRS21864S8-Lead PDIPIRS2186SIRS2186/IRS21864(S)PbF 2Absolute Maximum RatingsAbsolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured Note 2: L ogic operational for V S of -5 V to +600 V. L ogic state held for V S of -5 V to -V BS . (Please refer to the Design Tip DT97-3 for more details).Recommended Operating ConditionsThe i nput/o utput logic timing diagram is shown in Fig. 1. For proper operation the device should be used within the recommended conditions. The V and V offset rating are tested with all supplies biased at a 15 V differential.Note 1: All suplies are fully tested at 25 V and an internal 20 V clamp exists for each supply.IRS2186/IRS21864(S)PbF 3Dynamic Electrical CharacteristicsV BIAS (V CC , V BS ) = 15 V, V SS = COM, C L = 1000 pF, T A = 25 °C.IRS2186/IRS21864(S)PbF4Functional Block DiagramsIRS2186/IRS21864(S)PbF5Lead Assignments8-Lead PDIP 8-Lead SOICLead DefinitionsSymbol DescriptionHIN Logic input for high -side gate driver output (HO), in phase LIN Logic input for low -side gate driver output (LO), in phase VSSLogic ground (IRS21864 only)V B High -side floating supply HO High -side gate drive output V S High -side floating supply return V CC Low -side and logic fixed supply LO Low -side gate drive output COMLow side returnIRS2186PbF IRS2186SPbF12348765HIN LIN COM LOV B HO V S V CC12348765HIN LIN COM LOV B HO V S V CC1234567141312111098HIN LIN VSSCOM LO V CCV B HO V S1234567141312111098HIN LIN VSSCOM LO V CCV B HO V S14-Lead PDIP14-Lead SOICIRS21864PbFIRS21864SPbFIRS2186/IRS21864(S)PbF 6Figure 1. Input/Output Timing DiagramHIN LIN HO LOFigure 2. Switching Time Waveform DefinitionsFigure 3. Delay Matching Waveform DefinitionsIRS2186/IRS21864(S)PbF7IRS2186/IRS21864(S)PbF8IRS2186/IRS21864(S)PbF9IRS2186/IRS21864(S)PbF10IRS2186/IRS21864(S)PbF11IRS2186/IRS21864(S)PbF12IRS2186/IRS21864(S)PbF13IRS2186/IRS21864(S)PbF14IRS2186/IRS21864(S)PbF 15IRS2186/IRS21864(S)PbF 16IRS2186/IRS21864(S)PbF Array17IRS2186/IRS21864(S)PbF 18Case outlinesIRS2186/IRS21864(S)PbF21CLOAD ED TA PE FEED DIRECTIONTape & Reel 8-lead SOICIRS2186/IRS21864(S)PbF22CLOAD ED TA PE FEED DIRECTIONTape & Reel 14-lead SOICIRS2186/IRS21864(S)PbF 238-Lead PDIP IRS2186PbF 14-Lead PDIP IRS21864PbF 8-Lead SOIC IRS2186SPbF14-Lead SOIC IRS21864SPbF8-Lead SOIC Tape & Reel IRS2186STRPbF14-Lead SOIC Tape & Reel IRS21864STRPbFORDER INFORMATIONLEADFREE PART MARKING INFORMATIONPer SCOP 200-002The SOIC-14 is MSL3 qualified.This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR’s Web Site IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105Data and specifications subject to change without notice.11/20/2006The SOIC-8 is MSL 2 qualified.。
PSPT-65B中文资料
AC/DC Power SupplyFEATURES• 2 Year Warranty• 100% Full Load Burn-In Test• Universal AC Input/ Full Range• Low Leakage Current < 0.75mA• Cooling by Free Air Convection• Fixed Switching Frequency at 65KHz• Short Circuit, Overload, and Over Voltage ProtectedSPECIFICATIONS:PSPT65 SeriesAll specifications are based on 25o C, Nominal Input Voltage, and Maximum Output Current unless otherwise noted.We reserve the right to change specifications based on technological advances.INPUT SPECIFICATIONSInput Voltage 90 – 264VAC (127 – 370VDC)Input Frequency 47 ~ 440HzAC Current (typical) 1.5A @ 115VAC 0.9A @ 230VACInrush Current 20A @ 115VAC cold start 40A @ 230VAC cold start.Leakage Current < 0.75mAOUTPUT SPECIFICATIONSOutput Voltage See TableVoltage Tolerance (See Note 3) PSPT-65A,B,C: CH 1: ±4% CH.2: ±7% CH 3: ±5% PSPT-65D: CH 1: ±4% CH.2: ±6% CH 3: ±6%Voltage Adjustment Range CH1: 4.75 ~ 5.5VOutput Power (max) Rated output power for convection; 72W with 18CFM min. forced air.Line Regulation PSPT-65A,B,C: CH 1: ±1% CH.2: ±2% CH 3: ±1% PSPT-65D: CH 1: ±1% CH.2: ±2% CH 3: ±3%Load Regulation PSPT-65A,B,C: CH 1: ±3% CH.2: ±4% CH 3: ±1% PSPT-65D: CH 1: ±2% CH.2: ±5% CH 3: ±5%Output Current See TableRipple & Noise (See Note 2) See tableSetup, Rise Time 800ms, 20ms at full loadHold Up Time 60ms at full loadTemperature Coefficient ±0.04%/°C (0~50°C) on +5V output. PROTECTIONOver Voltage Protection CH.1: 5.75 ~ 6.75VDC on CH 1Protection Type: Hiccup mode, recovers automatically after fault condition is removed.Overload Protection 73 ~ 95W rated output power.Protection Type: Hiccup mode, recovers automatically after fault condition is removed.GENERAL SPECIFICATIONSSwitching Frequency (fixed) 65KHzEfficiency (typical) See tableWithstand Voltage 3KVAC (input to output), 1.5KVAC (input to FG), 0.5KVAC (output to FG). All for one minute. Isolation Resistance 100MΩ / 500VDC (input to output, input to FG, output to FG)ENVIRONMENTAL SPECIFICATIONSWorking Temperature -10°C to +60°C (refer to output load derating curve)Storage Temperature -20°C to +85°CWorking Humidity (non-condensing) 20% ~ 90% RH non-condensingStorage Humidity (non-condensing) 10% ~ 95% RHVibration 10~500Hz, 2G 10min./1cycle, Period for 60 minutes each along X, Y, and Z axes.MTBF 277,200 hours min. MIL-HDBK-217 (25°C)PHYSICAL SPECIFICATIONSWeight 28 oz.Dimensions 127(L) x 76(W) x 42(H) mmWarranty 2 yearsSAFETY & EMCSafety Standards UL60950-1, TUV EN60950-1 ApprovedEMI Conduction and Radiation Compliance to EN55022 (CISPR22) Class BHarmonic Current Compliance to EN61000-3-2,3EMS Immunity Compliance to EN61000-4-2,3,4,5,6,8,11; ENV50204, EN55024, Light industry level, criteria A.AC/DC Power SupplyOUTPUT VOLTAGE / CURRENT RATING CHARTModelInput VoltageOutput Voltage Output Current Range Rated Output CurrentRipple &Noise Output PowerEfficiencyChannel 15 VDC 0.4 ~ 7A 5.5A 50mVp-p Channel 2 12 VDC 0.2 ~ 3.2A 2.5A 120mVp-p PSPT-65AChannel 3 -5 VDC 0 ~ 0.7A 0.5A 50mVp-p 60W 76%Channel 15 VDC 0.4 ~ 7A 5.5A 50mVp-p Channel 2 12 VDC 0.2 ~ 3.2A 2.5A 120mVp-p PSPT-65BChannel 3-12 VDC 0 ~ 0.7A 0.5A 100mVp-p 63.5W 77%Channel 1 5 VDC 0.4 ~ 7A 5.5A 50mVp-p Channel 2 15 VDC 0.2 ~ 2.6A 2A 120mVp-p PSPT-65CChannel 3 -15 VDC 0 ~ 0.7A 0.5A 100mVp-p 65W 77%Channel 15 VDC 0.5 ~ 5A 4A 50mVp-p Channel 2 12 VDC 0.2 ~ 4A 2A 100mVp-p PSPT-65DChannel 390~264 VAC(127~370 VDC)24 VDC0.2 ~ 1.3A1A200mVp-p68W 79%NOTES1. All parameters not specially mentioned are measured at 230VAC input, rated load, and 25°C ambient temperature.2. Ripple & noise are measured at 20MHz using a 12" twisted pair-wire terminated with 0.1uF & 47uF capacitors in parallel .3. Tolerance: includes set up tolerance, line regulation, and load regulation.4. The power supply is considered a component, which will be installed into final equipment. The final equipment must be re- confirmed that it still meets EMC directives.5. Mounting holes M1 and M2 should be grounded for EMI purposes.BLOCK DIAGRAMfosc: 65KHzAC/DC Power Supply DERATING CURVESTATIC CHARACTERISTICS (B)MECHANICAL DRAWINGUnit: mmAC INPUT CONNECTOR (CN1)Pin. No Assignment1 AC/N2 AC/LDC OUTPUT CONNECTOR (CN2)Pin No. Assignment1 V22,3 +5V4,5 COM6 V3 PIN 2: +5V PIN 3,4,5: COM only for PSPT-65D。
MAX218EWP-T中文资料
_______________General DescriptionThe MAX218 RS-232 transceiver is intended for battery-powered EIA/TIA-232E and V.28/V.24 communications interfaces that need two drivers and two receivers with minimum power consumption. It provides a wide +1.8V to +4.25V operating voltage range while maintaining true RS-232 and EIA/TIA-562 voltage levels. The MAX218 runs from two alkaline, NiCd, or NiMH cells without any form of voltage regulator.A shutdown mode reduces current consumption to 1µA, extending battery life in portable systems. While shut down, all receivers can remain active or can be disabled under logic control, permitting a system incor-porating the CMOS MAX218 to monitor external devices while in low-power shutdown mode.A guaranteed 120kbps data rate provides compatibility with popular software for communicating with personal computers. Three-state drivers are provided on all receiver outputs so that multiple receivers, generally of different interface standards, can be wire-ORed at the UART. The MAX218 is available in 20-pin DIP, SO, and SSOP packages.________________________ApplicationsBattery-Powered Equipment Computers Printers Peripherals Instruments Modems____________________________FeaturesBETTER THAN BIPOLAR!o Operates Directly from Two Alkaline, NiCd, or NiMH Cells o +1.8V to +4.25V Supply Voltage Range o 120kbps Data Rateo Low-Cost Surface-Mount Components o Meets EIA/TIA-232E Specifications o 1µA Low-Power Shutdown Modeo Both Receivers Active During Low-Power Shutdown o Three-State Receiver Outputs o Flow-Through Pinout o On-Board DC-DC Converterso 20-Pin SSOP, Wide SO, or DIP Packages______________Ordering Information*Contact factory for dice specifications.MAX2181.8V to 4.25V-Powered,True RS-232 Dual Transceiver________________________________________________________________Maxim Integrated Products1__________________Pin Configuration__________Typical Operating CircuitCall toll free 1-800-998-8800 for free samples or literature.19-0246; Rev 1; 7/95M A X 2181.8V to 4.25V-Powered,True RS-232 Dual Transceiver 2_______________________________________________________________________________________ABSOLUTE MAXIMUM RATINGSELECTRICAL CHARACTERISTICS(Circuit of Figure 1, V CC = 1.8V to 4.25V, C1 = 0.47µF, C2 = C3 = C4 = 1µF, L1 = 15µH, T A = T MIN to T MAX , unless otherwise noted.Typical values are at V= 3.0V, T = +25°C.)Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.Supply VoltagesV CC ....................................................................-0.3V to +4.6V V+..........................................................(V CC - 0.3V) to +7.5V V-.......................................................................+0.3V to -7.4V V CC to V-..........................................................................+12V LX ................................................................-0.3V to (1V + V+)Input VoltagesT_IN, EN, S —H —D —N –.................................................-0.3V to +7V R_IN.................................................................................±25V Output VoltagesT_OUT.............................................................................±15V)R_OUT....................................................-0.3V to (V CC + 0.3V)Short-Circuit Duration, R_OUT, T_OUT to GND .......Continuous Continuous Power Dissipation (T A = +70°C)Plastic DIP (derate 11.11mW/°C above +70°C)..........889mW Wide SO (derate 10.00mW/°C above +70°C)..............800mW SSOP (derate 8.00mW/°C above +70°C)...................640mW Operating Temperature RangesMAX218C_ P.....................................................0°C to +70°C MAX218E_ P...................................................-40°C to +85°C Storage Temperature Range ...........................-65°C to +150°C Lead Temperature (soldering, 10sec) ...........................+300°CNote 1:Entire supply current for the circuit of Figure 1.MAX2181.8V to 4.25V-Powered,True RS-232 Dual Transceiver_______________________________________________________________________________________3TIMING CHARACTERISTICS(Circuit of Figure 1, V CC = 1.8V to 4.25V, C1 = 0.47µF, C2 = C3 = C4 = 1µF, L1 = 15µH, T A = T MIN to T MAX , unless otherwise noted.Typical values are at V CC = 3.0V, T A = +25°C.)______________________________________________________________Pin DescriptionReceiver InputsR2IN, R1IN 11, 12Transmitter Outputs; swing between V+ and V-.T2OUT, T1OUT13, 14Negative Supply generated on-boardV-15Terminals for Negative Charge-Pump Capacitor C1-, C1+16, 18Positive Supply generated on-boardV+19Ground. Connect all GND pins to ground.GND 5, 17, 20Supply Voltage Input; 1.8V to 4.25V. Bypass to GND with at least 1µF. See Capacitor Selection section.V CC 6Transmitter InputsT1IN, T2IN 7, 8Receiver Outputs; swing between GND and V CC.R1OUT, R2OUT 9, 10Receiver Output Enable Control. Connect to V CC for normal operation. Connect to GND to force the receiver outputs into high-Z state.EN 4Shutdown Control. Connect to V CC for normal operation. Connect to GND to shut down the power supply and to disable the drivers. Receiver status is not changed by this control.S —H —D —N–3PIN Not internally connectedN.C.2Inductor/Diode Connection Point LX 1FUNCTIONNAMEM A X 2181.8V to 4.25V-Powered,True RS-232 Dual Transceiver 4_______________________________________________________________________________________8-8TRANSMITTER OUTPUT VOLTAGE vs. LOAD CAPACITANCE AT 120kbpsLOAD CAPACITANCE (pF)T R A N S M I T T E R O U T P U T V O L T A G E (V )30000-2-6-41000200050006424000120SLEW RATE vs.TRANSMITTER CAPACITANCELOAD CAPACITANCE (pF)S L E W R A T E (V /µs )300042010002000500010864000__________________________________________Typical Operating Characteristics(Circuit of Figure 1, V CC = 1.8V, all transmitter outputs loaded with 3k Ω, T A = +25°C, unless otherwise noted.)12014001.8SUPPLY CURRENT vs. SUPPLY VOLTAGESUPPLY VOLTAGE (V)S U P P L Y C U R R E N T (m A )3.6604020 2.43.0801004.210020TRANSMITTING SUPPLY CURRENTvs. LOAD CAPACITANCELOAD CAPACITANCE (pF)S U P P L Y C U R R EN T (m A )30006050304010002000500090807040002V/divTIME TO EXIT SHUTDOWN (ONE TRANSMITTER HIGH, ONE TRANSMITTER LOW)100µs/divMAX2181.8V to 4.25V-Powered,True RS-232 Dual Transceiver_______________________________________________________________________________________5_______________Detailed DescriptionThe MAX218 line driver/receiver is intended for battery-powered EIA/TIA-232 and V.28/V.24 communications interfaces that require two drivers and two receivers.The operating voltage extends from 1.8V to 4.25V, yet the device maintains true RS-232 and EIA/TIA-562transmitter output voltage levels. This wide supply volt-age range permits direct operation from a variety of batteries without the need for a voltage regulator. For example, the MAX218 can be run directly from a single lithium cell or a pair of alkaline cells. It can also be run directly from two NiCd or NiMH cells from full-charge voltage down to the normal 0.9V/cell end-of-life point.The 4.25V maximum supply voltage allows the two rechargeable cells to be trickle- or fast-charged while driving the MAX218.The circuit comprises three sections: power supply,transmitters, and receivers. The power-supply section converts the supplied input voltage to 6.5V, providing the voltages necessary for the drivers to meet true RS-232levels. External components are small and inexpensive.The transmitters and receivers are guaranteed to oper-ate at 120kbps data rates, providing compatibility with LapLink™ and other high-speed communications soft-ware. A shutdown mode extends battery life by reduc-ing supply current to 0.04µA. While shut down, all receivers can either remain active or be disabled under logic control. With this feature, the MAX218 can be in low-power shutdown mode and still monitor activity on external devices. Three-state drivers are provided on both receiver outputs.Switch-Mode Power SupplyThe switch-mode power supply uses a single inductor with one diode and three small capacitors to generate ±6.5V from an input voltage in the 1.8V to 4.25V range.Inductor SelectionUse a 15µH inductor with a saturation current rating of at least 350mA and less than 1Ωresistance. Table 1 lists suppliers of inductors that meet the 15µH/350mA/1Ωspecifications.Diode SelectionKey diode specifications are fast recovery time (<10ns),average current rating (>100mA), and peak current rat-ing (>350mA). Inexpensive fast silicon diodes, such as the 1N6050, are generally recommended. More expen-sive Schottky diodes improve efficiency and give slightly better performance at very low V CC voltages. Table 1lists suppliers of both surface-mount and through-hole diodes. 1N914s are usually satisfactory, but specifica-tions and performance vary widely with different manu-facturers.Capacitor SelectionUse capacitors with values at least as indicated in Figure 1. Capacitor C2 determines the ripple on V+,but not the absolute voltage. Capacitors C1 and C3determine both the ripple and the absolute voltage of V-. Bypass V CC to GND with at least 1µF (C4) placed close to pins 5 and 6. If the V CC line is not bypassed elsewhere (e.g., at the power supply), increase C4 to 4.7µF.You may use ceramic or polarized capacitors in all locations. If you use polarized capacitors, tantalum types are preferred because of the high operating fre-quency of the power supplies (about 250kHz). If alu-minum electrolytics are used, higher capacitance val-ues may be required.™ LapLink is a trademark of Traveling Software, Inc.Figure 1.Single-Supply OperationM A X 2181.8V to 4.25V-Powered,True RS-232 Dual Transceiver 6_______________________________________________________________________________________RS-232 DriversThe two drivers are identical, and deliver EIA/TIA-232E and EIA/TIA-562 output voltage levels when V DD is between 1.8V and 4.25V. The transmitters drive up to 3k Ωin parallel with 1000pF at up to 120kbps. Connect unused driver inputs to either GND or V CC . Disable the drivers by taking S —H —D —N –low. The transmitter outputs areforced into a high-impedance state when S —H —D —N –is low.RS-232 ReceiversThe two receivers are identical, and accept both EIA/TIA-232E and EIA/TIA-562 input signals. The CMOS receiver outputs swing rail-to-rail. When EN is high, the receivers are active regardless of the state of S —H —D —N –. When EN is low, the receiver outputs are put into a high-impedance state. This allows two RS-232ports (or two ports of different types) to be wired-ORed at the UART.Operating ModesS —H —D —N –and EN determine the MAX218’s mode of opera-tion, as shown in Table 2.Table 2. Operating ModesShutdown When S —H —D —N –is low, the power supplies are disabled and the transmitters are put into a high-impedance state.Receiver operation is not affected by taking S —H —D —N –low.Power consumption is dramatically reduced in shutdown mode. Supply current is minimized when the receiver inputs are static in any of three states: floating (ground),GND, or V CC .__________Applications InformationOperation from Regulated/UnregulatedDual System Power Supplies The MAX218 is intended for use with three different power-supply sources: it can be powered directly from a battery, from a 3.0V or 3.3V power supply, or simulta-neously from both. Figure 1 shows the single-supply configuration. Figure 2 shows the circuit for operation from both a 3V supply and a raw battery supply—an ideal configuration where a regulated 3V supply is being derived from two cells. In this application, the MAX218’s logic levels remain appropriate for interface with 3V logic, yet most of the power for the MAX218 is drawn directly from the battery, without suffering the efficiency losses of the DC-DC converter. This pro-longs battery life.Bypass the input supplies with 0.1µF at V CC (C4) and at least 1µF at the inductor (C5). Increase C5 to 4.7µF if the power supply has no other bypass capacitor con-nected to it.Table 1. Suggested Component SuppliersMAX2181.8V to 4.25V-Powered,True RS-232 Dual Transceiver_______________________________________________________________________________________7Low-Power OperationThe following suggestions will help you get maximum life out of your batteries.Shut the MAX218 down when it is not being used for transmission. The receivers can remain active when the MAX218 is shut down, to alert your system to exter-nal activity.Transmit at the highest practical data rate. Although this raises the supply current while transmission is in progress, the transmission will be over sooner. As long as the MAX218 is shut down as soon as each transmis-sion ends, this practice will save energy.Operate your whole system from the raw battery volt-age rather than suffer the losses of a regulator or DC-DC converter. If this is not possible, but your system is powered from two cells and employs a 3V DC-DC con-verter to generate the main logic supply, use the circuit of Figure 2. This circuit draws most of the MAX218’spower straight from the battery, but still provides logic-level compatibility with the 3V logic.Keep communications cables short to minimize capaci-tive loading. Lowering the capacitive loading on the transmitter outputs reduces the MAX218’s power con-sumption. Using short, low-capacitance cable also helps transmission at the highest data rates.Keep the S —H —D —N –pin low while power is being applied tothe MAX218, and take S —H —D —N –high only after V CC has risen above about 1.5V. This avoids active operation at very low voltages, where currents of up to 150mA can be drawn. This is especially important with systems pow-ered from rechargeable cells;if S —H —D —N –is high while the cells are being trickle charged from a deep discharge,the MAX218 could draw a significant amount of the charging current until the battery voltage rises above 1.5V.Pin Configuration ChangeThe Pin Configuration shows pin 2 as N.C. (no con-nect). Early samples had a bypass capacitor for the internal reference connected to pin 2, which was labeled REF. This bypass capacitor proved to be unnecessary and the connection has been omitted. Pin 2 may now be connected to ground, left open, or bypassed to GND with a capacitor.EIA/TIA-232E and_____________EIA/TIA-562 StandardsRS-232 circuits consume much of their power because the EIA/TIA-232E standard demands that the transmit-ters deliver at least 5V to receivers with impedances that can be as low as 3k Ω. For applications where power consumption is critical, the EIA/TIA-562 standard provides an alternative.EIA/TIA-562 transmitter output voltage levels need only reach ±3.7V, and because they have to drive the same 3k Ωreceiver loads, the total power consumption is con-siderably reduced. Since the EIA/TIA-232E and EIA/TIA-562 receiver input voltage thresholds are the same, interoperability between EIA/TIA-232E and EIA/TIA-562 devices is guaranteed. Maxim’s MAX560and MAX561 are EIA/TIA-562 transceivers that operate on a single supply from 3.0V to 3.6V, and the MAX562transceiver operates from 2.7V to 5.25V while produc-ing EIA/TIA-562 levels.Figure 2.Operating from Unregulated and Regulated SuppliesMaxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.8___________________Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 (408) 737-7600©1995 Maxim Integrated ProductsPrinted USAis a registered trademark of Maxim Integrated Products.M A X 2181.8V to 4.25V-Powered,True RS-232 Dual Transceiver ___________________Chip TopographyTRANSISTOR COUNT: 571SUBSTRATE CONNECTED TO GNDC1+GND T1OUT SHDN ENT2OUTGND T1INLXV+R2IN R1OUTT2IN R2OUT0.101" (2.565mm)0.122" (3.099mm)R1IN C1-V-GNDVCC______3V-Powered EIA/TIA-232 and EIA/TIA-562 Transceivers from Maxim。
PS-60中文资料
SPECIFICATION
MODEL DC VOLTAGE RATED CURRENT CURRENT RANGE RATED POWER OUTPUT VOLTAGE ADJ . R ANGE VOLTAGE TOLERANCE Note.3 LINE R EGULATION LOAD REGULATION SETUP, R ISE, HOLD TIME VOLTAGE R ANGE FREQUENCY RANGE INPUT EFFICIENCY (Typ.) AC CURRENT INRUSH CURRENT (max.) OVER L OAD PROTECTION OVER VOLTAGE WORKING TEMP. PS -6005 5V 6.5A 0 ~ 6.5A 32.5W 4.75 ~ 5.5V 2.0% 1.0% 1.0% 100ms, 30ms, 50ms/230VAC 88 ~ 264VAC 47 ~ 63Hz 76% 82% 83% 84% 1.2A/115V AC 0.8A/230V AC COLD START 18A/115V AC 36A/230V AC 105 ~ 160% rated output power Protection type : Fold back current limiting, recovers automatically after fault condition is removed 5.75 ~ 6.75V 13.8 ~ 16.2V 17.25 ~ 20.25V 27.6 ~ 32.4V Protection type : Shut down o/p voltage, re-power on to recover 1 24 ~ 370VDC PS -6012 12V 4.5A 0 ~ 4.5A 54W 120mVp-p 11.1 ~ 13.2V 1.0% 1.0% 1.0% PS -6015 15V 4A 0 ~ 4A 60W 120mVp-p 13.5 ~ 16.5V 1.0% 1.0% 1.0% PS -6024 24V 2.5A 0 ~ 2.5A 60W 150mVp-p 21.6 ~ 26.4V 1.0% 1.0% 1.0%
IP65类型型号A和B双周期LED灯组合产品说明说明书
2.4m (x)(EN) Drilling diameter must be adjusted to the diameter of the cable glands.(FR) Le diamètre de perçage doit être adapté au diamètre des presses-étoupes.(DE) Bohrdurchmesser muss dem Kabeldurchmesser angepasst sein.51mA 25mA 18mA 27mA 16mA 11mA 35mA 16mA 11mA 19mA 10mA 9mA 12V 24V 48V W h i t e F l a s h F l a s h B l a n c W e i s s e r B l i t z51mA 25mA 18mA27mA 16mA 11mA35mA 16mA 11mA19mA 10mA 9mA12V 24V 48VR e d F l a s h F l a s h R o u g e R o t e r B l i t zI I(PL) Średnica wiercenia musi być dostosowana do średnicy dławików kablowych.(IT) È necessario adattare il diametro di perforazione in base al diametro del pressacavi.(EN) Cable glands must be compatible with declared cable size.(FR) Les presses-étoupes doivent être adaptés à la section des câbles déclarée.(DE) Kabeldurchfuehrungen muessen mit den angegebenen Kabelabmessungen kompatibel sein.(IT) È necessario che i pressacavi siano compatibili con la dimensione del cavo indicata.(PL) Dławiki kablowe muszą pasować do zadeklarowanego rozmiaru kabla.2801/2016IP65(FR) Placer le joint entre le produit et le support.(DE) Die Dichtung zwischen dem Produkt und der Befestigungsplatte.(PL) Umieścić uszczelkę między produktem a powierzchnią montażową.(IT) Posizionare guarnizione tra il prodotto e la super cie di montaggio.Technical data 25-11211-LRoLP LX Wall baseManufactured ByEaton Electrical Products LimitedLlantarnam Park, Cwmbran, Gwent, NP44 3AW, UK Tel: +44 (0)1633 628 500Fax:+44 (0)1633 866 Made in the UKEaton Industries Manufacturing GmbH Electrical Sector EMEA Route de la Longeraie 71110 Morges, Switzerland Eaton.eu© 2018 Eaton All rights reserved July 2018*(EN) Product manual M12-003** (EN) POŻAR label must be applied if product used in Poland(PL) Naklejka “POŻAR” musi być użyta jeżeli produkt jest stosowany w Polsce.Essential Characteristics / CaractéristiquesOperational Reliability / Fiabilité de Fonctionnement Duration of operation / Durée de fonctionnement PASS/CONFORME Provision for external conductors / Disposition pour conducteurs extérieurs PASS/CONFORME Flammability of materials / In ammabilitité des materiaux PASS/CONFORME Enclosure protection / Indice de protection PASS/CONFORME Access / Accès PASS/CONFORME Manufacturer’s adjustments / Réglages du fabricant PASS/CONFORME On-site adjustment of behaviour / Réglages du site PASS/CONFORME Requirements for software controlled devices / PASS/CONFORME Exigences relatives aux dispositifs contrôlés par logicielPerformance parameters under re condition / Paramètres de performance en cas d’incendieCoverage Volume / Volume de couverturePASS/CONFORME Variation of light output / Variance de la puissance lumineuse PASS/CONFORME Minimum/maximum light intensity / Intensité lumineuse minimale/maximale PASS/CONFORME Light colour WHITE /RED / Couleur de la lumière /BLANC /ROUGE Light pattern & frequency of ashing / E ets temporels lumineux et 0.5 /1Hzfréquence de clignotement du ashPASS/CONFORME Marking & Data / Marquage et données techniques PASS/CONFORME Synchronisation PASS/CONFORMETemperature Resistance / Résistance à la temperatureDry heat (operational) / Chaleur sèche (fonctionnel) PASS/CONFORME Dry heat (endurance) / Chaleur sèche (endurance) PASS/CONFORME Cold (operational) / Froid (fonctionnel)PASS/CONFORME Humidity Resistance / Résistance à l’humiditéDamp heat, cyclic (operational) / Chaleur humide, cyclique (fonctionnel)PASS/CONFORME Damp heat, steady state (endurance) / Chaleur humide, continue (endurance) PASS/CONFORME Damp heat, cyclic (endurance) / Chaleur humide, cyclique (endurance) PASS/CONFORME Shock & Vibration & Resistance / Choc & Vibration & Resistance Shock (operational) / Choc mécanique (fonctionnel) PASS/CONFORME Impact (operational) / Impact (fonctionnel) PASS/CONFORME Vibration (operational) / Vibration (fonctionnel) PASS/CONFORME Vibration (endurance)PASS/CONFORME Corrosion Resistance / Résistance à la corrosion SO 2 corrosion (endurance) / Corrosion par le SO2 PASS/CONFORME Electrical Stability / Stabilité électriqueEMC immunity (operational) / CEM Immunité (fonctionnel)PASS/CONFORMEOption 2。
富士LH-PA冲版机中文技术手册
·长耐印力
最新研发的 E.D.L（增强显影加速层）
光感度控制
对 800 - 850nm 波长范围的 IR（红外）激光高度敏感
多层砂目
更趋成熟
·保持图文部分与支撑体之间具有强的粘着 性
·提高了非图文区在显影时的溶解性 ·提高了显影宽容度 ·很高的激光感度 ·可在日光下操作 ·提供更宽的水墨平衡，不易上脏，稳定的 耐印力和杰出的印刷特性。
制版机厂家的技术工程师
调节曝光参数（调焦等） 确定最优的曝光条件（激光强度， 转/分） 校准版材上的色调还原
7
2.2 制版过程
2.2.1 版材处理
1）安全光时间
LH-PA 能够在白光条件下处理。然而长时间曝光将会导致图像的损失。推荐使用紫外过 滤光。 2）存储场所 存储时应将未曝光的 LH-PA 放在包装盒内。包装盒应放于干燥且阴凉的暗处，温度不超 过 30℃。避免放在靠近水箱、干燥机或窗户的地方。 * 最佳条件为：温度 21～25ºC，每小时温度变化小于 2ºC 湿度 相对湿度 50～60％，每小时变化小于 5％ 同传统 PS 版比较，LH-PA 在存储时对高温和潮湿更敏感。这必须对用户强调。 3) 保留版的储存 清洗干净后涂上 FN-6(A)保护胶，存储条件和未使用过的版相同，注意由于使用过的 版面有油墨及其它杂物附着，如果清洁不当会导致再次使用的效果。建议最长保留时间 1 个月。 4）版材处理 为了防止划伤，不要直接触摸乳剂。在操作时要使用垫纸。划痕将导致图像的损失。但 显影后操作时不需要专门的预防措施。
1. 超强的耐化学药品性,可在不烤版的情况下使用 UV 油墨印刷 2. 具有杰出的印刷性能 3. 在显影处理过程中不需要预加热 4. 出众的安全灯特性
1.1.4 技术规格
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Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Intellimod™ ModuleDual-In-Line Intelligent Power Module20 Amperes/600 VoltsPS21865-P1Description:DIP-IPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry in an ultra compactdual-in-line transfer-mold package for use in driving small three phase motors. Use of 5thgeneration IGBTs, DIP packaging, and application specific HVICs allow the designer to reduce inverter size and overall design time.Features:£ Compact Packages £ Single Power Supply £ Integrated HVICs£ Direct Connection to CPU Applications:£ Washing Machines £ Refrigerators £ Air Conditioners £ Small Servo Motors £ Small Motor ControlOrdering Information:PS21865-P is a 600V , 20 Ampere DIP Intelligent Power Module.Note: P suffix designates lead-free lead frame.Dimensions InchesMillimeters A 3.11±0.02 79.0±0.5 B 1.22±0.02 31.0±0.5 C 0.28±0.02 7.0±0.5 D 2.64±0.01 67.0±0.3 E 0.53±0.02 13.4±0.5 F 0.84±0.02 21.4±0.5 G 1.37±0.02 34.9±0.5 H 0.15±0.01 3.8±0.2 J 0.11±0.01 2.8±0.3 K 0.39±0.01 10.0±0.3 L 0.79±0.01 20.0±0.3 M 0.50±0.04 12.8±1.0 N2.9875.6Dimensions Inches Millimeters P 0.04 1.0 Q 0.18±0.01 Dia. 4.5±0.2 Dia. R 0.15 3.8 S Min. 1.0 Min. T 0.02 Min. 0.7 Min. U 0.1 2.5 V 0.03±0.01 0.8±0.2 W 0.02 0.7 X 0.45±0.02 11.5±0.5 Y 0.18 4.5 Z 0.12 3.1 AA 0.02 0.6Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272PS21865-PIntellimod™ ModuleDual-In-Line Intelligent Power Module20 Amperes/600 VoltsAbsolute Maximum Ratings, T j = 25°C unless otherwise specifiedCharacteristics Symbol PS21865-P Units Power Device Junction Temperature* T j-20 to 125 °C Module Case Operation T emperature (See T f Measurement Point Illustration) T f-20 to 100 °C Storage Temperature T stg-40 to 125 °C Mounting Torque, M4 Mounting Screws — 13 in-lb Module Weight (Typical) — 65 Grams Self-protection Supply Voltage Limit (Short Circuit Protection Capability)** V CC(prot.)400 Volts Isolation Voltage, AC 1 minute, 60Hz Sinusoidal, Connection Pins to Heatsink Plate V ISO2500 Volts *The maximum junction temperature rating of the power chips integrated within the DIP-IPM is 150°C (@T f≤ 100°C). However, to ensure safe operation of the DIP-IPM,the average junction temperature should be limited to T j(avg)≤ 125°C (@T f≤ 100°C).**V D = 13.5 ~ 16.5V, Inverter Part, T j = 125°C, Non-repetitive, Less than 2µsIGBT Inverter SectorCollector-Emitter Voltage (T f = 25°C) V CES600 Volts Collector Current (T f = 25°C) ±I C20 Amperes Peak Collector Current (T f = 25°C, <1ms) ±I CP40 Amperes Supply Voltage (Applied between P - N) V CC450 Volts Supply Voltage, Surge (Applied between P - N) V CC(surge)500 Volts Collector Dissipation (T f = 25°C, per 1 Chip) P C52.6 WattsControl SectorSupply Voltage (Applied between V P1-V PC, V N1-V NC) V D20 Volts Supply Voltage (Applied between V UFB-V UFS,V VFB-V VFS, V WFB-V WFS) V DB20 Volts Input Voltage (Applied between U P, V P, W P-V PC, U N, V N, W N-V NC) V IN-0.5 ~ V D+0.5 Volts Fault Output Supply Voltage (Applied between F O-V NC) V FO-0.5 ~ V D+0.5 Volts Fault Output Current (Sink Current at F O Terminal) I FO 1 mA Current Sensing Input Voltage (Applied between C IN-V NC) V SC-0.5 ~ V D+0.5 Volts2Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272PS21865-PIntellimod™ ModuleDual-In-Line Intelligent Power Module20 Amperes/600 VoltsElectrical and Mechanical Characteristics, T j = 25°C unless otherwise specifiedCharacteristics Symbol Test Conditions Min. Typ. Max. UnitsIGBT Inverter SectorCollector-Emitter Cutoff Current I CES V CE = V CES, T j = 25°C — — 1.0 mAV CE = V CES, T j = 125°C — — 10 mA Diode Forward Voltage V EC T j = 25°C, -I C = 20A, V IN = 0V — 1.5 2.0 Volts Collector-Emitter Saturation Voltage V CE(sat)I C = 20A, T j = 25°C, V D = V DB = 15V, V IN = 5V — 1.6 2.1 VoltsI C = 20A, T j = 125°C, V D = V DB = 15V, V IN = 5V — 1.7 2.2 Volts Inductive Load Switching Times t on0.7 1.30 1.90 µsrr CC D DBC(on)C j INoffC(off)T fMeasurement Point3Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272PS21865-PIntellimod™ ModuleDual-In-Line Intelligent Power Module20 Amperes/600 VoltsElectrical and Mechanical Characteristics, T j = 25°C unless otherwise specifiedCharacteristics Symbol Test Conditions Min. Typ. Max. UnitsControl SectorSupply Voltage V D Applied between V P1-V PC, V N1-V NC13.5 15.0 16.5 VoltsV DB Applied between V UFB-V UFS, 13.0 15.0 18.5 VoltsV VFB-V VFS, V WFB-V WFSCircuit Current I D V D = V DB = 15V, V IN = 5V, — — 5.00 mATotal of V P1-V PC, V N1-V NCV D = V DB = 15V, V IN = 0V, — — 7.00 mATotal of V P1-V PC, V N1-V NCV D = V DB = 15V, V IN = 5V, — — 0.40 mAV UFB-V UFS, V VFB-V VFS, V WFB-V WFSV D = V DB = 15V, V IN = 0V, — — 0.55 mAV UFB-V UFS, V VFB-V VFS, V WFB-V WFSFault Output Voltage V FOH V SC = 0V, F O Circuit: 10kΩ to 5V Pull-up 4.9 — — VoltsV FOL V SC = 1V, I FO = 1mA — — 0.95 Volts Input Current I IN V IN = 5V 1.0 1.50 2.00 mA Short-Circuit Trip Level* V SC(ref)T j = 25°C, V D = 15V 0.43 0.48 0.53 Volts Supply Circuit Undervoltage UV DBt T rip Level, T j≤ 125°C 10.0 — 12.0 Volts Protection UV DBr Reset Level, T j≤ 125°C 10.5 — 12.5 VoltsUV Dt Trip Level, T j≤ 125°C 10.3 — 12.5 VoltsUV Dr Reset Level, T j≤ 125°C 10.8 — 13.0 Volts Fault Output Pulse Width** t FO C FO = 22nF 1.0 1.8 — msth(on)P P P PC,th(off)N N N NCThermal CharacteristicsCharacteristic Symbol Condition Min. Typ. Max. Units Junction to Fin R th(j-f)Q IGBT Part (Per 1/6 Module) — — 1.90 °C/Watt Thermal Resistance R th(j-f)D FWDi Part (Per 1/6 Module) — — 3.00 °C/WattRecommended Conditions for UseCharacteristic Symbol Condition Min. Typ. Max. Units Supply Voltage V CC Applied between P-N T erminals 0 300 400 Volts Control Supply Voltage V D Applied between V P1-V PC, V N1-V NC13.5 15.0 16.5 VoltsV DB Applied between V UFB-V UFS,13.0 15.0 18.5 VoltsV VFB-V VFS, V WFB-V WFSControl Supply VariationΔV D, ΔV DB-1 — 1 V/µs PWM Input Frequency f PWM T f ≤ 100°C, T j≤ 125°C — — 20 kHz * Short-Circuit protection is functioning only at the lower arms. Please select the value of the external shunt resistor such that the SC trip level is less than 34A.**Fault signal is asserted when the lower arm short circuit or control supply under-voltage protective functions operate. The fault output pulse-width t FO depends on the capacitance value of C FO according to the following approximate equation: C FO = (12.2 x 10-6) x t FO {F} .45PS21865-PIntellimod™ ModuleDual-In-Line Intelligent Power Module 20 Amperes/600 VoltsPowerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Recommended Conditions for UseCharacteristicSymbol ConditionMin. Typ. Max. Units Allowable rms Current* I O V CC = 300V , V D = 15V , f C = 5kHz, — — 15 Arms PF = 0.8, Sinusoidal, T j ≤ 125°C, T f ≤ 100°CV CC = 300V , V D = 15V , f C = 15kHz, — — 9.3 ArmsPF = 0.8, Sinusoidal, T j ≤ 125°C, T f ≤ 100°CMinimum Input P WIN(on)**0.3 — — µs Pulse WidthP WIN(off)***CC D Between Rated Current 13.0 ≤ V DB ≤ 18.5V , -20°C ≤ T f ≤ 100°C, 2.5 — —µsV NC Variation V NC Between V NC -N (Including Surge) -5.0 — 5.0 Volts Arm Shoot-through t DEADFor Each Input Signal, T f < 100°C2.0——µsBlocking Time* The allowable rms current value depends on the actual application conditions.**If input signal ON pulse is less than P WIN(on), the device may not respond.***The IPM may fail to respond to an ON pulse if the preceeding OFF pulse is less than P WIN(off).REVERSE RECOVERY CHARACTERISTICS(TYPICAL)C O L L E C T O R -E M I T T E R S A T U R A T I O N V O L T A G E , V C E (s a t ), (V O L T S )COLLECTOR-EMITTERSATURATION VOLTAGE CHARACTERISTICS(TYPICAL)2.01.51.00.5FREE-WHEEL DIODEFORWARD CHARACTERISTICS(TYPICAL)100102101EMITTER CURRENT, I E , (AMPERES)R E V E R S E R E C O V E R Y T I M E , t r r , (n s )COLLECTOR CURRENT, I C , (AMPERES)103100102101102101COLLECTOR CURRENT, I C , (AMPERES)Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272PS21865-PIntellimod™ ModuleDual-In-Line Intelligent Power Module20 Amperes/600 VoltsDIP-IPM Application Circuit (Shown Pins Up)plane.Component Selection:Dsgn.T yp. Value DescriptionD11A, 600V Boot strap supply diode – Ultra fast recoveryC110-100uF, 50V Boot strap supply reservoir – Electrolytic, long life, low Impedance, 105°C (Note 5)C20.22-2.0uF, 50V Local decoupling/High frequency noise filters – Multilayer ceramic (Note 8)C310-100uF, 50V Control power supply filter – Electrolytic, long life, low Impedance, 105°CC422nF, 50V Fault lock-out timing capacitor – Multilayer ceramic (Note 4)C5100pF, 50V Optional input signal noise filter – Multilayer ceramic (Note 1)C6200-2000uF, 450V Main DC bus filter capacitor – Electrolytic, long life, high ripple current, 105°CC70.1-0.22uF, 450V Surge voltage suppression capacitor – Polyester/Polypropylene film (Note 9)C SF1000pF, 50V Short circuit detection filter capacitor – Multilayer Ceramic (Note 6, Note 7)R SF 1.8k ohm Short circuit detection filter resistor (Note 6, Note 7)R SHUNT5-100 mohm Current sensing resistor - Non-inductive, temperature stable, tight tolerance (Note 10)R110 ohm Boot strap supply inrush limiting resistor (Note 5)R2330 ohm Optional control input noise filter (Note 1, Note 2)R310k ohm Fault output signal pull-up resistor (Note 3)Notes:1) T o prevent input signal oscillations minimize wiring length to controller (~2cm). Additional RC filtering (C5 etc.) may berequired. If filtering is added be careful to maintain proper dead time. See application notes for details.2) Internal HVIC provides high voltage level shifting allowing direct connection of all six driving signals to the controller.3) F O output is an open collector type. Pull up resistor (R3) should be adjusted to current sink capability of the module.4) C4 sets the fault output duration and lock-out time. C4 12.2E-6 x t FO, 22nF gives ~1.8ms5) Boot strap supply component values must be adjusted depending on the PWM frequency and technique.6) Wiring length associated with R SHUNT, R SF, C SF must be minimized to avoid improper operation of the SC function.7) R SF, C SF set short-circuit protection trip time. Recommend time constant is 1.5us-2.0us. See application notes.8) Local decoupling/high frequency filter capacitors must be connected as close as possible to the modules pins.9) The length of the DC link wiring between C6, C7, the DIP’s P terminal and the shunt must be minimized to preventexcessive transient voltages. In particular C7 should be mounted as close to the DIP as possible.10) Use high quality, tight tolorance current sensing resistor. Connect resistor as close as possible to the DIP’sN terminal. Be careful to check for proper power rating. See application notes for calculation of resistance value.6。