AO4438规格书 AOS

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AO3400 规格书 AOS

VGS=10V
1.8
VGS=4.5V Id=5A 1.6
1.4
17
VGS=105V
1.2
Id=5.8A2
10
1
10
0
5
10
15
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.8 0
25 50 75 100 125 150 175
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient Thermal Resistance
ID(A)
15
VDS=5V 12
9
6
125°C 3
25°C
0
0
0.5
1
1.5
2
2.5
3
VGS(Volts) Figure 2: Transfer Characteristics (Note E)
Normalized On-Resistance
RDS(ON) (mΩ)
30
25 VGS=4.5V
20
15
AO3400
30V N-Channel MOSFET
General Description
Product Summary
The AO3400 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is suitable for use as a load switch or in PWM applications.

AO4468 规格书

VDS=VGS ID=250µA
1.2 1.8 2.4
V
ID(ON)
On state drain current
VGS=10V, VDS=5V
50
A
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=10.5A
TJ=125°C
14
17
mΩ
20
24
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.1mH C
ID
IDM IAS, IAR EAS, EAR
TA=25°C Power Dissipation B TA=70°C
ID=250µA, VGS=0V
30
V
IDSS
Zero Gate Voltage Drain Current
VDS=30V, VGS=0V
TJ=55°C
1 µA
5
IGSS
Gate-Body leakage current
VDS=0V, VGS=±16V
±10 µA
VGS(th) Gate Threshold Voltage
Top View
D D D D
SOIC-8 Bottom View
D G
G
S S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter

AO3434A 规格书 AOS

-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State
RθJA
70 100
Maximum Junction-to-Lead
10µs
100µs
1ms 10ms 10s DC
0.0
0.01
0.1
1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
Power (W)
10000 1000
TA=25°C
100
10
1
1E-05
0.001
ns
Qrr
Body Diode Reverse Recovery Charge IF=4A, dI/dt=500A/µs
7.5
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design.
Steady-State
RθJL
63
Max 90 125 80

AO4435规格书 AOS

Symbol V DS V GSI DM I AR E AR T J , T STG ParameterSymbolTyp Max t ≤ 10s3240Steady State 6075Steady StateR θJL1724A mJ °C-55 to 150-2060W ±25-80AV -10.5-83.12.0Maximum Junction-to-Lead C°C/WThermal Characteristics Units Maximum Junction-to-Ambient A °C/W Maximum Junction-to-Ambient A °C/W R θJA -30Absolute Maximum Ratings T A =25°C unless otherwise noted Continuous Drain Current AUnitsParameter T A =25°C T A =70°CV MaximumI D Gate-Source Voltage P D Power Dissipation A T A =25°C Drain-Source Voltage Pulsed Drain Current B Junction and Storage Temperature Range T A =70°C Avalanche Current BRepetitive avalanche energy 0.3mH B 100% UIS Tested 100% Rg Tested-AO4435 is Halogen FreeSOIC-8Top View Bottom View D DD D SS S G GDSSymbolMin TypMaxUnits BV DSS -30V -1T J = 55°C-5I GSS ±100nA V GS(th)-1.7-2.3-3V I D(ON)-80A1114T J =125°C151915182736g FS 22S V SD -0.74-1V I S-3.5A C iss 11301400pF C oss 240pF C rss 155pF R g15.88ΩQ g(10V)1824nC Q g(4.5V)9.5Q gs 5.5nC Q gd 3.3nC t D(on)8.7ns t r 8.5ns t D(off)18ns t f 7ns t rr 2530ns Q rr12nCTHIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.V GS =0V, V DS =-15V, f=1MHz Input Capacitance Output CapacitanceTurn-On Rise Time Total Gate Charge Turn-Off DelayTime V GS =-10V, V DS =-15V, R L =1.5Ω,R GEN =3ΩTurn-Off Fall TimeTurn-On DelayTime m ΩSWITCHING PARAMETERS Gate Source Charge Gate Drain Charge Total Gate Charge V GS =-10V, V DS =-15V, I D =-10ADYNAMIC PARAMETERS Maximum Body-Diode Continuous CurrentGate resistanceV GS =0V, V DS =0V, f=1MHzI S = -1A,V GS = 0VV DS = -5V, I D = -10A V GS = -5V, I D = -5AV GS = -10V, I D = -10A R DS(ON)Static Drain-Source On-ResistanceForward Transconductance Diode Forward VoltageI DSS µA Gate Threshold Voltage V DS = V GS I D = -250µA V DS = -30V, V GS = 0VV DS = 0V, V GS = ±25V Zero Gate Voltage Drain Current Gate-Body leakage current Electrical Characteristics (T J =25°C unless otherwise noted)STATIC PARAMETERS ParameterConditionsBody Diode Reverse Recovery TimeBody Diode Reverse Recovery Charge I F =-10A, dI/dt=100A/µsDrain-Source Breakdown Voltage On state drain currentI D = -250µA, V GS = 0V V GS = -10V, V DS = -5V V GS = -20V, I D = -11AReverse Transfer Capacitance I F =-10A, dI/dt=100A/µsA: The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C.The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.B: Repetitive rating, pulse width limited by junction temperature.C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The SOA curve provides a single pulse rating.F. The current rating is based on the t ≤ 10s thermal resistance rating.G. E AR and I AR ratings are based on low frequency and duty cycles to keep T j =25C.Rev7: Nov. 2010。

AOS MOSFET选用表

AO3400Not for new designs AO3400A SOT23-3Single General Purpose N No No 30AO3400A Full ProductionSOT23-3Single General Purpose N No No 30AO3401Not for new designs AO3401ASOT23-3Single General Purpose P No No -30AO3401A Full Production SOT23-3Single General Purpose P No No -30AO3402Full Production SOT23-3Single General Purpose N No No 30AO3403Full ProductionSOT23-3Single General Purpose P No No -30AO3404Not for new designs AO3404ASOT23-3Single General Purpose N No No 30AO3404A Full Production SOT23-3Single General Purpose N No No 30AO3406Full ProductionSOT23-3Single General Purpose N No No 30AO3407Not for new designs AO3407ASOT23-3Single General Purpose P No No -30AO3407A Full Production SOT23-3Single General Purpose P No No -30AO3409Full Production SOT23-3Single General Purpose P No No -30AO3413Full Production SOT23-3Single General Purpose P No No -20AO3414Full ProductionSOT23-3Single General Purpose N No No 20AO3415Not for new designs AO3415ALSOT23-3Single General Purpose P Yes No -20AO3415AL NewSOT23-3Single General Purpose P Yes No -20AO3416Full Production SOT23-3Single Load Switch N Yes No 20AO3418Full Production SOT23-3Single SMPSN No No 30AO3419Full Production SOT23-3Single General Purpose P Yes No -20AO3420Full Production SOT23-3Single Load Switch N No No 20AO3421Full Production SOT23-3Single General Purpose P No No -30AO3422Full Production SOT23-3Single General Purpose N No No 55AO3423Full Production SOT23-3Single General Purpose P Yes No -20AO3424Full Production SOT23-3Single General Purpose N No No 30AO3434Full Production SOT23-3Single Battery ProtectionN Yes No 30AO3435New SOT23-3Single SMPS P No No -20AO3438New SOT23-3Single Load Switch N No No 20AO3460NewSOT23-3Single Load Switch N Yes No 60AO3700Full Production SOT23-5Single General Purpose N Yes No 30AO3701Full Production SOT23-5Single General Purpose P Yes No -20AO3702NewSOT23-5Single General Purpose N No Yes 0.5A 20AO3703Full Production SOT23-5Single General PurposeP No Yes 0.5A -20AO3705NewSOT23-5Single SMPSP No Yes 1A-20AO4403Full Production SO-8Single General Purpose P No No -30AO4404BNewSO-8SingleGeneral PurposeNNoNo30ConfigurationPopular Application Type ESD Diode Part Number StatusReplacementPart Package Schottky Diode Schottky TypeV DS (V)* indicate Qg at 10VFor all bottom exposed packages, the Id and Pd are calculated at 100°C, otherwise are calculated at 70°C.。

AO4453规格书 AOS

Symbol Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-12
V
IDSS
Zero Gate Voltage Drain Current
V
IS
Maximum Body-Diode Continuous Current
-3.5 A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Байду номын сангаас
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
Max 50 85 30

AO4447A规格书 AOS

AO4447A30V P-Channel MOSFETGeneral Description• Trench Power MOSFET technology • Low RDS(ON) • ESD Protected • RoHS and Halogen-Free CompliantProduct SummaryVDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) Typical ESD protection -30V -18.5A < 5.8mΩ < 8.2mΩ HBM Class 3BApplications• System/Load Switch • Battery Switch • USB-PD Load SwitchSOIC-8 Top View D D D D Bottom View100% UIS TestedTop ViewD1 2 3 48 7 6 5GG S S S SOrderable Part NumberAO4447APackage TypeSO-8FormTape & ReelMinimum Order Quantity3000Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Avalanche Current C Avalanche energy Power Dissipation B L=0.1mH TA=25°C TA=70°CCSymbol VDS VGS TA=25°C TA=70°C ID IDM IAS EAS PD TJ, TSTGMaximum -30 ±20 -18.5 -14.5 -74 54 146 3.1 2.0 -55 to 150Units V V A A mJ W °CJunction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-LeadSymbolt ≤ 10s Steady-State Steady-StateRθJA RθJLTyp 31 59 16Max 40 75 24Units °C/W °C/W °C/WRev.5.0: October 2017Page 1 of 5AO4447AElectrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-30V, VGS=0V TJ=55°C VDS=0V, VGS=±16V VDS=VGS, ID=-250µA VGS=-10V, ID=-18.5A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, ID=-16A Forward Transconductance Diode Forward Voltage VDS=-5V, ID=-18.5A IS=-1A, VGS=0V TJ=125°C -1.2 -1.7 4.7 6.6 6.3 65 -0.66 -1 -4 5020 VGS=0V, VDS=-15V, f=1MHz f=1MHz 815 615 125 93 VGS=-10V, VDS=-15V, ID=-18.5A 46 14 21 180 VGS=-10V, VDS=-15V, RL=0.8Ω, RGEN=3Ω IF=-18.5A, di/dt=500A/µs 280 1400 830 17 53 250 130 Min -30 -1 -5 ±10 -2.2 5.8 8.2 8.2 Typ Max Units V µA µA V mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nCSTATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold VoltageMaximum Body-Diode Continuous CurrentDYNAMIC PARAMETERS Input Capacitance Ciss Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistanceSWITCHING PARAMETERS Total Gate Charge Qg(10V) Qg(4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-18.5A, di/dt=500A/µsA. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.Rev.5.0: October 2017Page 2 of 5AO4447ATYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS80 -10V -4V 80 -3.5V VDS=-5V 6060-4.5V-ID (A)-ID (A)40 -3V40125°C20 VGS=-2.5V 0 0 1 2 3 4 52025°C0 1 2 3 4 5-VDS (Volts) Figure 1: On-Region Characteristics (Note E) 10 Normalized On-Resistance 1.6-VGS (Volts) Figure 2: Transfer Characteristics (Note E)8 RDS(ON) (mΩ )VGS=-4.5V1.4VGS=-10V ID=-18.5A61.2 VGS=-4.5V ID=-16A4 VGS=-10V 210 0 5 10 15 20 25 30 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 20 ID=-18.5A0.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 1.0E+01 1.0E+0015 RDS(ON) (mΩ ) 1.0E-01 10 -IS (A) 125°C 1.0E-02 1.0E-03 5 25°C 0 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 2 4 1.0E-04 1.0E-05 0.0 0.4 0.6 0.8 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) 0.2 1.0 25°C 125°CRev.5.0: October 2017Page 3 of 5AO4447ATYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS10 VDS=-15V ID=-18.5A 8 Capacitance (pF) 5000 4000 3000 2000 Coss 1000 0 0 20 40 60 80 100 Crss 0 0 5 10 15 20 25 30 7000 6000 Ciss-VGS (Volts)642Qg (nC) Figure 7: Gate-Charge Characteristics 1000.0 10µs-VDS (Volts) Figure 8: Capacitance Characteristics1000100.010µs 1ms 10msPower (W) 100TJ(Max)=150°C TA=25°C-ID (Amps)10.0RDS(ON) limited1.0100ms TJ(Max)=150°C TA=25°C 10s DC100.10.0 0.011 10 -VDS (Volts) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F)0.11001 0.0001 0.0010.010.11101001000Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)10 ZθJA Normalized Transient Thermal ResistanceD=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse1RθJA=75°C/W0.1PDM0.01Single Pulse Ton T0.001 1E-050.00010.0010.010.1110100Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)Rev.5.0: October 2017Page 4 of 5AO4447AGate Charge Test Circuit & WaveformVgs Qg -10VVDCVDCDUT Vgs IgResistive Switching Test Circuit & WaveformsRL Vds Vgs Vgs Rg DUTVDCVgs VdsUnclamped Inductive Switching (UIS) Test Circuit & WaveformsL Vds Id Vgs Rg DUT Vgs Vgs Vgs Vds BVDSS Vdd Id I AR EAR= 1/2 LIAR2VDCDiode Recovery Test Circuit & WaveformsVds + DUT Vgst rrVds -Isd VgsLVDC+ Vdd -VdsIgRev.5.0: October 2017+-+-+Chargeton td(on) tr td(off) toff tf-+-VdsQgsQgdVdd90%10%Q rr = - Idt-Isd-I FdI/dt -I RM VddPage 5 of 5。

AOS-mosfet选型手册

AO3160New SOT23-3Single High Voltage N No No AO3162NewSOT23-3Single High Voltage N No No AO3400Not for new designs AO3400A SOT23-3Single General Purpose N No No AO3400A Full ProductionSOT23-3Single General Purpose N No No AO3401Not for new designs AO3401ASOT23-3Single General Purpose P No No AO3401A Full Production SOT23-3Single General Purpose P No No AO3402Full Production SOT23-3Single General Purpose N No No AO3403Full ProductionSOT23-3Single General Purpose P No No AO3404Not for new designs AO3404ASOT23-3Single General Purpose N No No AO3404A Full Production SOT23-3Single General Purpose N No No AO3406Full ProductionSOT23-3Single General Purpose N No No AO3407Not for new designs AO3407ASOT23-3Single General Purpose P No No AO3407A Full Production SOT23-3Single General Purpose P No No AO3409Full Production SOT23-3Single General Purpose P No No AO3413Full Production SOT23-3Single General Purpose P No No AO3414Full ProductionSOT23-3Single General Purpose N No No AO3415Not for new designs AO3415ASOT23-3Single General Purpose P Yes No AO3415A Full Production SOT23-3Single General Purpose P Yes No AO3416Full Production SOT23-3Single Load Switch N Yes No AO3418Full Production SOT23-3Single SMPSN No No AO3419Full Production SOT23-3Single General Purpose P Yes No AO3420Full Production SOT23-3Single Load Switch N No No AO3421Full Production SOT23-3Single General Purpose P No No AO3421E NewSOT23-3Single General Purpose P No No AO3422Full Production SOT23-3Single General Purpose N No No AO3423Full Production SOT23-3Single General Purpose P Yes No AO3424Full Production SOT23-3Single General Purpose N No No AO3434Full Production SOT23-3Single Battery Protection N Yes No AO3434A NewSOT23-3Single Battery ProtectionN Yes No AO3435Full ProductionSOT23-3SingleSMPSPNoNoESD Diode Schottky DiodeSchottky TypeAOS 一级代理商科通通信技术（深圳）有限公司为您提供选型和技术支持,可根据项目应用提供样片支持，点击型号名称可以直接下载相应的数据手册！同时提供ATMEL 产品的选型及技术支持，根据项目情况提供样片，硬件设计，程序开发帮助！联系人：税超电话：139********QQ:55860609ConfigurationPopular Application Type Part Number StatusReplacementPartPackage25°C 70°C 25°C 70°C 10V 4.5V 2.5V1.8V1.5V1.2V600200.040.03 1.390.89500000600000 3.2100.71*600300.0340.028 1.390.89500000 4.1 4.20.050.7*3012 5.8 4.9 1.41283352 1.456305063012 5.7 4.7 1.40.926.532 1.45630506-3012-4-3.2 1.40.9506585-1.3645557-3012-4-3.2 1.40.9506085-1.364555730124 3.2 1.40.9526585 1.523518 4.7-3012-2.6-2.2 1.40.9115150200-1.426020 2.8302054 1.40.93143 2.425535 2.553020 5.8 4.9 1.40.92535 2.637341 3.33020 3.6 2.9 1.40.95070 2.5170232-3020-4.1-3.5 1.40.95287-2.552065 4.6-3020-4.3-3.5 1.40.94878-2.452065 4.6-3020-2.6-2.2 1.41110180-2.419726 2.2-208-3-2.4 1.40.980100130-1560708.52083 2.5 1.40.9627085126027 2.9-208-4-3.5 1.51415365-0.9751809.3-208-4-3.5 1.51415365-0.9751809.3208 6.5 5.2 1.40.92226341.1129587103012 3.8 3.1 1.40.9556585 1.523518 4.7-2012-3.5-2.8 1.40.985102140-1.2325373.1201265 1.40.9242742551.1525756-3020-2.6-2.2 1.41110180-2.419726 2.2-3020-3-2 1.40.995160-2.521527.5 2.25512 2.1 1.7 1.250.8160200221412.6 2.6-2012-2-2 1.40.992118166-1.2325373.23012 3.8 3.1 1.40.9556585 1.5235184.73020 3.5 2.810.645275 1.8269413301243 1.40.9485775 1.524520 2.6-208-2.9-2.310.67090110-1560708.5I D (A)P D (W)V DS (V)V GS (±V)Ciss (pF)Crss (pF)Qg (nC)R DS(ON) (mΩ max) at V GS =VGS(th)(max V)下载相应的数据手册！程序开发帮助！。

AOS产品目录副本MOSFET_selector

深圳市万国高科电子有限公司 11年一级代理原装正品美国万代AOS MOSFETS产品系列地址：深圳市福田区深南大道4019号航天大厦A座2005室电话：0755-******** 0755-******** 手机：137******** 廖剑琴ctor Guide - All Products25°C70°C 25°C70°C 10V 4.5V 2.5V 1.8V Rev: April2008AO3400Not for new designs AO3400A SOT-23Single General Purpose N No No3012 5.8 4.9 1.41283352 1.4823779.7 3.1 3.326.3AO3400A New SOT-23Single General Purpose N No No3012 5.7 4.7 1.40.926.532 1.59006510 3.75 3.221.5AO3401Not for new designs AO3401A SOT-23Single General Purpose P No No-3012-4.2-3.5 1.415065120-1.3954779.43 6.338.2AO3401A Full Production SOT-23Single General Purpose P No No-3012-4.3-3.8 1.40.9445580-1.3933819.3 3.7 5.242AO3402Full Production SOT-23Single General Purpose N No No30124 3.4 1.415570110 1.439041 4.34 1.38 3.321.7AO3403Full Production SOT-23Single General Purpose P No No-3012-2.6-2.2 1.41130180260-1.440942 4.4 1.32 5.331.5AO3404Not for new designs AO3404A SOT-23Single General Purpose N No No3020 5.8 4.9 1.412843368077 6.78 3.12 4.620.9AO3404A New SOT-23Single General Purpose N No No3020 5.8 4.9 1.40.92842362185 5.73 4.515.1AO3406Full Production SOT-23Single General Purpose N No No3020 3.6 2.9 1.40.965105328839 3.1 1.6 4.620.1AO3407Not for new designs AO3407A SOT-23Single General Purpose P No No-3020-4.1-3.5 1.415287-370075738.628.2AO3407A New SOT-23Single General Purpose P No No-3020-4.3-3.5 1.40.94878-2.566892 6.447.720AO3409Full Production SOT-23Single General Purpose P No No-3020-2.6-2.2 1.41130200-330237.8 2.40.957.517AO3413Full Production SOT-23Single General Purpose P No No-208-3-2.4 1.40.997130190-154049 6.1 1.61044AO3414Full Production SOT-23Single General Purpose N No No208 4.2 3.2 1.40.9506387143644 6.20.5 5.540AO3415Full Production SOT-23Single General Purpose P Yes No-208-4-3.5 1.40.9435473-1145016017.2 4.59.594AO3416Full Production SOT-23Single Load Switch N Yes No208 6.5 5.2 1.40.92226341116014616 3.8 6.251.7AO3418Full Production SOT-23Single SMPS N No No3012 3.8 3.1 1.40.96070155 1.82262930.55 2.614.5AO3419Full Production SOT-23Single General Purpose P Yes No-2012-3.5-2.8 1.40.97595145-1.451262 5.5 1.9528AO3420Full Production SOT-23SingleLoad SwitchN No No201265 1.40.92427425516301378.8 3.7 5.529AO3421Full Production SOT-23Single General Purpose P No No-3020-2.6-2.2 1.41130200-330237.8 2.40.957.517AO3422Full Production SOT-23Single General Purpose N No No5512 2.1 1.7 1.250.8160200221412.6 2.60.8 2.316.5AO3423Full Production SOT-23Single General PurposeP No No-2012-2-2 1.40.992118166-1.451262 5.519528 AO3424Full Production SOT-23Single General PurposeN No No301222 1.40.98095157 1.822629 2.60.5 2.614.5AO3434New SOT-23Single Battery Protection N Yes No3020 3.5 2.810.645275 1.82694130.65 2.615.2Part NumberTypeESDDiodeV DS (V)V GS (±V)StatusTd(off)(ns)Ciss(pF)Crss(pF)VGS(th)(max V)P D (W)R DS(ON) (mΩ max) at V GS=Qg(nC)Qgd(nC) ReplacementPartPackage ConfigurationTd(on)(ns) Popular ApplicationSchottkyDiodeSchottkyTypeI DS (A)AOL1426Full Production Ultra SO8Single SMPS High Side N No No301215124 2.610.513.5 2.512108510 2.71021AOL1428Full Production Ultra SO8SingleSMPS High SideN No No30201814539.516 2.510001008.5 4.8 5.618.5AOL1432Full Production Ultra SO8Single SMPS High Side N No No25202117648.5143143021513.57.75 6.522.7AOL1436Not for new designs AOL1428Ultra SO8Single SMPS Low Side N No No253020165311.541100200*17 6.89.511.5AOL1440Full ProductionUltra SO8Single SMPS Low Side N No No2530252053 5.242100400*33141215AOL1444Not for new designs AOL1700Ultra SO8Single SMPS Low Side N No No3020262153 4.3 6.31607037546.415.615.755.5AOL1446Not for new designs AOL1418Ultra SO8Single SMPS High Side N No No30202116537113132515513.5 6.67.222AOL1454New Ultra SO8Single Inverter N Yes No402017135 3.29133160010010.5 4.8 6.533AOL1700New Ultra SO8Single SMPS Low SideN No Yes SRFET302026215 3.2 4.26 2.2376031429129.534 AOL1702Full Production Ultra SO8Single SMPS Low SideN No Yes SRFET301221175 3.2 5.87.2 2.440002172711937 AOL1704Full Production Ultra SO8Single SMPS Low SideN No Yes SRFET30121814 4.3 2.87.89.8 2.42800145196731 AOL1708New Ultra SO8Single SMPS Low SideN No Yes SRFET30202116.55 3.2 6.29.52215418517.87.6 6.825.2 AOL1712New Ultra SO8Single SMPS Low SideN No Yes SRFET30121512 2.1 1.3 4.2 5.5 2.539402553512.49.845AON2701New DFN 2x2SingleLoad SwitchP No Yes2A-208-3-2.2 1.10.73120160200-15406351528.5AON2801New DFN 2x2DualLoad SwitchP No No-208-32 1.10.73120160200-15406351528.5AON3402Full Production DFN 3x3SingleGeneral PurposeN Yes No2012129.63 1.91317261181020017.9 4.7 2.5 4.9AON3406Full Production DFN 3x3SingleGeneral PurposeN Yes No3030107.83 1.9152439551129 4.7519AON3408Full Production DFN 3x3SingleGeneral PurposeN No No30128.57.23 1.9242945 1.59006510 3.75 3.221.5AON3702Full Production DFN 3x3Single SMPS Low Side N No YesSRFET3012118.83 1.914.518 1.914509212 4.2 5.524AON3806Full Production DFN 3x3Common Drain Battery ProtectionN Yes No2012 6.8 5.4 1.9 1.2263516151208.53729AON3810Full Production DFN 3x3Common Drain Battery ProtectionN Yes No201276 2.2 1.424293955128035 5.2 1.92802350AON3812New DFN 3x3Common Drain Battery ProtectionN Yes No30126 5.3 2.2 1.4273040 1.533010 6.4 2.5388 2.7AON3814Full Production DFN 3x3Common Drain Battery ProtectionN Yes No20126 5.3 2.4 1.5172439 1.1131518313.1 4.610005600AON3816New DFN 3x3Common Drain Battery ProtectionN Yes No201244 2.4 1.52228 1.1131518315 4.610005600AON4413New DFN 2x3Single Load SwitchP No No-3020-4.7-3.7 1.614660-2.56689212.747.720AON4602Not for new designs AON4604DFN 2x3Complementary Inverter N No No208 4.2 3.2 1.40.9425268143644 6.20.5 5.540AON4602Not for new designs AON4604DFN 2x3Complementary Inverter P No No-208-3.4-2.7 1.7 1.190120160-154049 6.1 1.61044 AON4604Full ProductionDFN 2x3Complementary Inverter N No No208 5.4 4.3 1.9 1.2425272143644 6.5 2.1736.5AON4604Full ProductionDFN 2x3Complementary Inverter P No No-208-3.8-3 1.9 1.290120170-154049 5.9 1.911.537.5 AON4605New DFN 2x3Complementary Inverter N No No3020 4.3 3.4 1.9 1.265115323830 3.1 1.6 3.313.2 AON4605New DFN 2x3Complementary Inverter P No No-3020-3.4-2.7 1.9 1.2110180-3290443 1.6715AON4701Not for new designs AON4703DFN 2x3SingleLoad SwitchP No Yes1A-208-3.4-2.7 1.7 1.190120160-154049 6.1 1.61044。

si4438无线模块详细规格书

常用天线有如下表所示：弹簧天线特点：体积小、成本低、方便嵌入
SMA 胶棒天线（可选）特点：体积适中、成本低、增益高
小吸盘天线（可选）特点：增益高、含有磁性底座，适用于铁箱外壳设备、安装方便
第7页
常见故障及排除方法
故障现象
故障原因和排除方法
数据不通
1．电源是否接触不良。测量模块电源电压是否在额定范围内。 2．信号线是否接触不良。测试模块SPI接口是否正常工作。 3．收/发模块的配置是否一致。检查接收模块和发射模块的寄存器配置是否一致。 4．是否信号堵塞。如果发射功率很大，收/发模块放置的距离很近（<0.5米）则有可能信
二、特点
频率范围：425-525 灵敏度高达 -124dBm 最大输出功率：20dBm 85 mA@+20dBm （发射）数据传输率：0.1 -500kbps FSK，GFSK 和 OOK 调制模式 1.8-3.6 V 供电超低耗关机模式数字接收信号强度指示(RSSI) 定时唤醒功能天线自动匹配及双向开关控制
号堵塞，造成数据不通。
距离太近误码率高
1．环境是否恶劣，天线是否被屏蔽，将天线引出或架高或更换增益更高的天线。 2．是否存在同频或强磁或电源干扰，更换信道或远离干扰源。 3．电源是否匹配。电压与电流是否够大。
1．电源纹波大，更换电源。 2．查看模块的寄存器配置是否正确，按推荐值配置寄存器。 3．是否存在同频干扰，更换信道。 4．天线不匹配，更换匹配的天线。
ＨＫＷ３８无线模块
使用说明
深圳市华凯微技术开发有限公司
第1页
一、描述
本公司的ＨＫＷ３８无线模块采用的是 SiliconLaboratories 的 Si4438 器件，这是一款高度集成的无线 ISM 频段收发芯片。极低的接收灵敏度（-124 dBm）,再加上业界领先的+20 dBm 的输出功率保证扩大范围和提高链路性能。同时内置天线多样性和对跳频支持可以用于进一步扩大范围，提高性能。

AO3423 规格书 AOS

128 166 mΩ
gFS
Forward Transconductance
VDS=-5V, ID=-2A
6.8
S
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
-0.76 -1
V
IS
Maximum Body-Diode Continuous Current
-1.5 A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz
250 325 400 pF
1.0E+00
1.0E-01 1.0E-02
125°C
25°C
1.0E-03
1.0E-04
1.0E-05
0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Rev 5: Nov 2011
RDS(ON) (mΩ)
180
160 VGS=-2.5V
140
120
VGS=-4.5V 100
80
60
VGS=-10V
40
0
2
4
6
8
10
-ID (A) Figure 3: On-Resistance vs. Drain Current and Gate

AOS美国万代全系列产品参数大全

ID (A) 0.04 5.8 5.7 -4 -4 4 -2.6 5 5.8 3.6 -4.1 -4.3 -2.6 -3 3 -4 -4 6.5 3.8 -3.5 6 -2.6 2.1 -2 3.8 3.5 -2.9 3 0.5 --6 8.5 -6 11.5 13 -12 -12 -15 18 -8 -15 -8 -9.7 13.7 13.7 -6.2 -17 -14 0.03 4.9 4.7 -3.2 -3.2 3.2 -2.2 4 4.9 2.9 -3.5 -3.5 -2.2 -2.4 2.5 -3.5 -3.5 5.2 3.1 -2.8 5 -2.2 1.7 -2 3.1 2.8 -2.3 2.5 1.6 -2.3 19 15 14 18 14 22 18 16 16 -5 7.1 -5.1 9.6 10.4 -10 -10 -13 15 -6.6 -13 -6.6 -7.8 9.7 9.7 -5 -14 -11
-30 30 -30 -30 -12 60 60 -60 75 -40 80 30 -30 -30 80 -30 40 100 100 -30 30 30 30 30 30 40 100 40 -40 100 30 30 30 30 30 30 30 30 -30 30 -30 30 60 -60 60 -60 -30 30 -40 40 -40 40 -30 30 -40 40 -40 40 -30
Qgd (nC) 0.52* 1.8 1.8 2.5 2.5 1.6 1 1.3 1.7 1 2.2 2.2 1.1 2.1 0.6 2.2 2.2 2.6 1.6 1.1 2 1.1 0.8 0.9 1.6 0.65 2.1 0.6 1.9 8 4.2 8.5 10.9 5.6 6.2 4.7 3.2 12 2.5 1.8 2.2 5.5 3 10 10.4 23 16.8 3.2 16 5.2 4.6 8.6 8.6 9.2 14 16.1

AO3403 规格书 AOS

(Note E)
RDS(ON) (mΩ)
250
200
150
100
25°C
ID=-2.6A 125°C
50
0
2
4
6
8
10
-VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
-IS (A)
1.0E+02
1.0E+01
40
VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS =-4.5V) RDS(ON) (at VGS =-2.5V)
-30V -2.6A < 115mΩ < 150mΩ < 200mΩ
SOT23
Top View
Bottom View
D
D D
S
G
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TA=25°C TA=70°C
RDS(ON) (mΩ)
210
190
VGS=-2.5V
170
150
130
VGS=-4.5V
110
90
70
VGS=-10V
50
0
1
2
3
4
5

AO3404 规格书 AOS

Power (W)
10000 1000
TA=25°C
100
10
1
0.00001 0.001
0.1
10
1000
Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-
Ambient (Note F)
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
255 310 pF
45
AO3404
30V N-Channel MOSFET
General Description
Product Summary
The AO3404 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device may be used as a load switch or in PWM applications.
ID=-250µA, VGS=0V
30
IDSS
Zero Gate Voltage Drain Current
VDS=30V, VGS=0V
TJ=55°C

DSAP4438 产品说明书

Part NumberEmitting Color (Material)Lens TypeΦe(mW) [2] @ 20mA Viewing [1]AngleMin. Typ. 2θ1/2KTS-2012UV365 Ultraviolet (InGaN) Water Clear150°8.6 13FEATURESz 2.0 mm x 1.25 mm SMD LED, 0.75 mm thickness zLow power consumption z Wide viewing anglez Package: 2000 pcs / reel z Moisture sensitivity level: 1 zRoHS compliantAPPLICATIONSzPhotocatalytic Purificationz Blood and Counterfeit money detectionz UV curing in nail salon, dental, and poster printing applicationsz UV Sensor LightPACKAGE MATERIALSzMaterial as follows: Package: CeramicsEncapsulating resin: Silicone resin Electrodes: Au platingATTENTIONObserve precautions for handlingelectrostatic discharge sensitive devicesPACKAGE DIMENSIONSSELECTION GUIDENotes:1. θ1/2 is the angle from optical centerline where the radiant intensity is 1/2 of the optical peak value.2. Radiant flux: +/-15%.3. Radiant flux value is traceable to CIE127-2007 standards.KTS-2012UV3652.0 x 1.25 mm UV LED With Ceramic SubstrateRECOMMENDED SOLDERING PATTERN(units : mm; tolerance : ± 0.1)Notes:1. All dimensions are in millimeters (inches).2. Tolerance is ±0.25(0.01") unless otherwise noted.3. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice.4. The device has a single mounting surface. The device must be mounted according to the specifications.ABSOLUTE MAXIMUM RATINGS at T A =25°CELECTRICAL / OPTICAL CHARACTERISTICS at T A =25°CNotes:1. Forward voltage: ±0.1V.2. Wavelength value is traceable to CIE127-2007 standards.3. Excess driving current and / or operating temperature higher than recommended conditions may result in severe light degradation or premature failure.ParameterSymbol Value UnitWavelength at Peak Emission I F = 20mA [Min.] λpeak 360Wavelength at Peak Emission I F = 20mA [Typ.] 365 Wavelength at Peak Emission I F = 20mA [Max.] 370Spectral Bandwidth at 50% Φ REL MAX I F = 20mA [Typ.] Δλ10 nmForward Voltage I F = 20mA [Typ.]V F [1]3.3VForward Voltage I F = 20mA [Max.] 3.8 Reverse Current (V R = 5V) [Max.] I R 50 µA Temperature Coefficient of V F I F = 20mA, -10°C ≤ T ≤ 85°CTC V-3.0mV/°CnmParameterSymbolValueUnitPower Dissipation P D 120 mW Reverse Voltage V R 5 V Junction Temperature T j 115 °C Operating Temperature T op -40 to +85 °C Storage Temperature T stg -40 to +85°C DC Forward Current I F 30 mA Peak Forward CurrentI FM [1] 100 mA Thermal Resistance (Junction / Ambient) R th JA [2] 100 °C/W Thermal Resistance (Junction / Solder point)R th JS [2]50°C/WNotes:1. 1/10 Duty Cycle, 0.1ms Pulse Width.2. R t h JA ,R t h JS Results from mounting on PC board FR4 (pad size ≥ 16 mm 2 per pad).3. Relative humidity levels maintained between 40% and 60% in production area are recommended to avoid the build-up of static electricity – Ref JEDEC/JESD625-A and JEDEC/J-STD-033.TECHNICAL DATAULTRAVIOLETTAPE SPECIFICATIONS (units : mm)REEL DIMENSION (units : mm)REFLOW SOLDERING PROFILE for LEAD-FREE SMD PROCESSNotes:1. Don't cause stress to the LEDs while it is exposed to high temperature.2. The maximum number of reflow soldering passes is 2 times.3. Reflow soldering is recommended. Other soldering methods are not recommended as they mightcause damage to the product.PACKING & LABEL SPECIFICATIONSHANDLING PRECAUTIONSCompare to epoxy encapsulant that is hard and brittle, silicone is softer and flexible. Although its characteristic significantly reduces thermal stress, it is more susceptible to damage by external mechanical force. As a result, special handling precautions need to be observed during assembly using silicone encapsulated LED products. Failure to comply might lead to damage and premature failure of the LED.2. Do not directly touch or handle the silicone lenssurface. It may damage the internal circuitry.1. Handle the component along theside surfaces by using forceps orappropriate tools.3. Do not stack together assembledPCBs containing exposed LEDs.Impact may scratch the silicone lens4. As silicone encapsulation is permeable to gases, some corrosive substances such as H2S might corrode silverplating of lead frame. Special care should be taken if an LED with silicone encapsulation is to be used near suchsubstances.PRECAUTIONARY NOTES1. The information included in this document reflects representative usage scenarios and is intended for technical reference only.2. The part number, type, and specifications mentioned in this document are subject to future change and improvement without notice. Before production usage customer should refer tothe latest datasheet for the updated specifications.3. When using the products referenced in this document, please make sure the product is being operated within the environmental and electrical limits specified in the datasheet. Ifcustomer usage exceeds the specified limits, Kingbright will not be responsible for any subsequent issues.4. The information in this document applies to typical usage in consumer electronics applications. If customer's application has special reliability requirements or have life-threateningliabilities, such as automotive or medical usage, please consult with Kingbright representative for further assistance.5. The contents and information of this document may not be reproduced or re-transmitted without permission by Kingbright.6. All design applications should refer to Kingbright application notes available at /application_notes。

Si4438中文数据手册

Si4438 针对中国智能仪表市场，特别适合于智能电表。

该设备的覆盖区及引脚与 Si446x 无线电兼容，可为全世界的次千兆赫应用提供行业领先的性能。

无线电设备是 EZRadioPRO ®产品系列的一部分，包括全套发射器、接收器和收发器的产品线，涵盖各种应用。

所有零件都具有杰出的灵敏度—124dBm ，可同时实现极低的有效电流和待机电流消耗。

12.5kHz 通道 58dB 相邻通道选择性的间距确保了严苛 RF 条件下的可靠接收操作。

Si4438 可提供超常的高达 +20dBm 具有显著 TX 效率的输出功率。

高输出功率和灵敏度实现了业界领先的144dB 链路预算，实现了范围扩展和高度可靠的通信链路。

⏹频率范围=425–525MHz ⏹接收灵敏度=–124dBm ⏹调制● (G)FSK ● OOK⏹最大输出功率● +20dBm⏹低活动功耗● 14mA RX⏹超低电流断电模式● 30nA 关机，40nA 待机⏹数据传输率=100 bps 到 500kbps⏹前导探测模式● 6在 1.2kbps 时 mA 平均 Rx 电流⏹快速唤醒和跳数⏹电源=1.8 至 3.8V⏹出色的选择性能● 58dB 相邻通道● 1MHz 处阻断增益为 75dB⏹天线分集和 T/R 开关控制⏹高度可配置的分组处理程序⏹TX 和 RX64 字节 FIFO⏹自动频率控制 (AFC)⏹自动增益控制 (AGC)⏹低 BOM⏹低电量探测器⏹温度传感器⏹20 引脚 QFN 封装⏹IEEE 802.15.4g 就绪⏹适合中国调控（国家电网）⏹中国智能仪表专利申请中Si4438-C功能框图Product Freq. Range Max Output Power TX Current RX Current Si4438425–525MHz+20dBm75mA13.7mASi4438-C修订版 1.03目录章节页码1. 电气规格 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .42. 功能描述 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .113. 控制器接口 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .123.1. 串行外围接口 (SPI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .123.2. 快速响应寄存器 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .143.3. 工作模式和计时 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .143.4. 应用程序编程接口 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .183.5. 中断 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .183.6. GPIO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .184. 调制和硬件配置选项 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .194.1. 调制类型 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .194.2. 硬件配置选项 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .194.3. 前导长度 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .215. 内部功能块 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .235.1. RX 链 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .235.2. RX 调制解调器 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .235.3. 合成器 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .255.4. 发送器（TX ） . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .275.5. 晶体振荡器 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .296. 数据处理和分组处理程序 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .316.1. RX 和 TX FIFO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .316.2. 分组处理程序 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .327. RX 调制解调器配置 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .338. 辅助块 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .338.1. 唤醒定时器和 32kHz 时钟源 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .338.2. 低占空比模式（自动 RX 唤醒） . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .338.3. 温度、电池电压和辅助 ADC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .348.4. 低电量探测器 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .358.5. 天线分集 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .358.6. 前导探测模式 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .359. 引脚描述：Si4438-C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3710. 订购信息 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3911. 封装外形：Si4438 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4012. PCB 焊盘图案：Si4438 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4113. 顶部标记 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4313.1. Si4438 顶部标记 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4313.2. 顶部标记说明 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .43联系信息 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .44Si4438-C1. 电气规格Table 1. DC Characteristics *Parameter Symbol Test ConditionMin Typ Max Unit Supply Voltage RangeV DD 1.8 3.3 3.8V Power Saving ModesI Shutdown RC Oscillator, Main Digital Regulator, and Low Power Digital Regulator OFF —30—nA I Standby Register values maintained and RCoscillator/WUT OFF —40—nA I SleepRC RC Oscillator/WUT ON and all register valuesmaintained, and all other blocks OFF —740—nA I SleepXO Sleep current using an external 32kHz crystal.— 1.7—µA I Sensor -LBD Low battery detector ON, register values maintained, and all other blocks OFF —1—µA I ReadyCrystal Oscillator and Main Digital Regulator ON,all other blocks OFF— 1.8—mA Preamble Sense Mode CurrentI psm Duty cycling during preamble search,1.2kbps, 4 byte preamble —6—mA I psmFixed 1s wakeup interval, 50kbps, 5 bytepreamble—10—µA TUNE Mode Current I Tune_RX RX Tune —7.6—mA I Tune_TX TX Tune —7.8—mA RX Mode Current I RXH —13.7—mA TX Mode Current (Si4438)I TX_+20+20dBm output power, class-E match, 490MHz,3.3V—75—mA*Note: All minimum and maximum values are guaranteed across the recommended operating conditions of supply voltageand from –40 to +85°C unless otherwise stated. All typical values apply at VDD =3.3V and 25°C unless otherwise stated.Si4438-CTable 2. Synthesizer AC Electrical Characteristics1Parameter Symbol Test Condition Min Typ Max UnitF SYN425—525MHz Synthesizer FrequencyRange (Si4438)F RES-525425–525MHz—14.3—Hz Synthesizer FrequencyResolution2—50—µs Synthesizer Settling Time t LOCK Measured from exiting Ready mode withXOSC running to any frequency.Including VCO Calibration.Phase Noise Lφ(f M)∆F=10kHz, 460MHz—–109—dBc/Hz∆F=100kHz, 460MHz—–111—dBc/Hz∆F=1MHz, 460MHz—–131—dBc/Hz∆F=10MHz, 460MHz—–141—dBc/HzNotes:1.All minimum and maximum values are guaranteed across the recommended operating conditions of supply voltage andfrom –40 to +85°C unless otherwise stated. All typical values apply at VDD=3.3V and 25°C unless otherwise stated.2. Default API setting for modulation deviation resolution is double the typical value specified.Si4438-CTable 3. Receiver AC Electrical Characteristics 1ParameterSymbol Test ConditionMin Typ Max Unit RX Frequency Range (Si4438)F RX 425—525MHz RX Sensitivity 2P RX_0.5(BER < 0.1%)(500bps, GFSK, BT =0.5,∆f =±250Hz)2—–124—dBmP RX_40(BER < 0.1%)(40kbps, GFSK, BT =0.5,∆f =±20kHz)2—–108—dBmP RX_100(BER < 0.1%)(100kbps, GFSK, BT =0.5,∆f =±50kHz)1—–104—dBmP RX_9.6(BER < 0.1%)(9.6kbps, GFSK, BT =0.5,∆f =±4.8kHz)2—–114—dBmP RX_OOK(BER < 0.1%, 4.8kbps, 350kHz BW,OOK, PN15 data)2—–108—dBm (BER < 0.1%, 40kbps, 350kHz BW,OOK, PN15 data)2—–102—dBm (BER < 0.1%, 120kbps, 350kHz BW,OOK, PN15 data)2—–98—dBm RX Channel Bandwidth BW 1.1—850kHz RSSI Resolution RES RSSI —±0.5—dB ±1-Ch Offset Selectivity, 450MHz 2C/I 1-CHDesired Ref Signal 3dB above sensitivity, BER < 0.1%. Interferer is CW, and desired is modulated with2.4kbps∆F =1.2kHz GFSK with BT =0.5, RXchannel BW =4.8kHz, channel spacing =12.5kHz —–60—dBBlocking 1MHz Offset 21M BLOCK Desired Ref Signal 3dB above sensitivity, BER =0.1%. Interferer is CW, and desired is modulated with2.4kbps,∆F =1.2kHz GFSK with BT =0.5,RX channel BW =4.8kHz —–77—dB Blocking 8MHz Offset 28M BLOCK—–84—dBImage RejectionIm REJRejection at the image frequency.IF =468kHz—40—dBNotes:1.All minimum and maximum values are guaranteed across the recommended operating conditions of supply voltage andfrom –40 to +85°C unless otherwise stated. All typical values apply at VDD =3.3V and 25°C unless otherwise stated.2. Measured over 50000 bits using PN9 data sequence and data and clock on GPIOs. Sensitivity is expected to be betterif reading data from packet handler FIFO especially at higher data rates.Si4438-CTable 4. Transmitter AC Electrical Characteristics1Parameter Symbol Test Condition Min Typ Max Unit TX FrequencyRangeF TX425—525MHz(G)FSK Data Rate2DR FSK0.1—500kbps OOK Data Rate2DR OOK0.1—120kbps Modulation DeviationRange∆f525425–525MHz—750—kHz Modulation DeviationResolution3F RES-525425–525MHz—14.3—HzOutput Power Range4P TXTypical range at 3.3Vwith class E match optimized for bestPA efficiency.–20—+20dBmTX RF Output Steps∆PRF_OUT Using Class E match within 6dB of maxpower—0.25—dBTX RF Output LevelVariation vs. Temperature∆P RF_TEMP–40 to +85︒C— 2.3—dB TX RF Output LevelVariation vs. Frequency∆P RF_FREQ—0.6—dBTransmit ModulationFiltering B*T Gaussian Filtering Bandwith TimeProduct—0.5—Notes:1.All minimum and maximum values are guaranteed across the recommended operating conditions of supply voltage andfrom –40 to +85°C unless otherwise stated. All typical values apply at VDD=3.3V and 25 °C unless otherwise stated.2. The maximum data rate is dependent on the XTAL frequency and is calculated as per the formula:Maximum Symbol Rate=Fxtal/60, where Fxtal is the XTAL frequency (typically 30MHz).3. Default API setting for modulation deviation resolution is double the typical value specified.4. Output power is dependent on matching components and board layout.Si4438-CTable 5. Auxiliary Block Specifications 1ParameterSymbol Test ConditionMin Typ Max Unit Temperature Sensor SensitivityTS S—4.5—ADC Codes/°C Low Battery Detector ResolutionLBD RES —50—mV Microcontroller ClockOutput Frequency Range 2F MCConfigurable to Fxtal or Fxtal divided by 2, 3, 7.5, 10, 15, or 30 where Fxtal is the reference XTAL frequency. In addition, 32.768kHz is also supported.32.768K—FxtalHzTemperature Sensor Conversion TEMP CT Programmable setting—3—ms XTAL Range 3XTAL Range25—32MHz 30MHz XTAL Start-Up Timet 30MUsing XTAL and board layout in reference design. Start-up time will vary with XTAL type andboard layout.—300—µs30MHz XTAL Cap Resolution30M RES —70—fF 32kHz XTAL Start-Up Time t 32k —2—sec 32kHz Accuracy using Internal RC Oscillator 32KRC RES—2500—ppm POR Reset Timet POR——6msNotes:1.All minimum and maximum values are guaranteed across the recommended operating conditions of supply voltage andfrom –40 to +85°C unless otherwise stated. All typical values apply at V DD =3.3V and 25°C unless otherwise stated.2. Microcontroller clock frequency tested in production at 1MHz, 30MHz, 32MHz, and 32.768kHz. Other frequenciestested in bench characterization.3. XTAL Range tested in production using an external clock source (similar to using a TCXO).Si4438-CTable 6. Digital IO Specifications (GPIO_x, SCLK, SDO, SDI, nSEL, nIRQ, SDN)1Parameter Symbol Test Condition Min Typ Max Unit Rise Time2,3T RISE0.1x V DD to 0.9x V DD,C L=10pF,DRV<1:0>=LL— 2.3—nsFall Time3,4T FALL0.9x V DD to 0.1x V DD,C L=10pF,DRV<1:0>=LL—2—nsInput Capacitance C IN—2—pF Logic High Level Input Voltage V IH V DD x0.7——V Logic Low Level Input Voltage V IL——V DD x0.3V Input Current I IN0<V IN< V DD–1—1µA Input Current If Pullup is Activated I INP V IL=0V1—4µADrive Strength for Output Low Level I OmaxLL DRV[1:0]=LL3— 6.66—mA I OmaxLH DRV[1:0]=LH3— 5.03—mA I OmaxHL DRV[1:0]=HL3— 3.16—mA I OmaxHH DRV[1:0]=HH3— 1.13—mADrive Strength for Output High Level I OmaxLL DRV[1:0]=LL3— 5.75—mA I OmaxLH DRV[1:0]=LH3— 4.37—mA I OmaxHL DRV[1:0]=HL3— 2.73—mA I OmaxHH DRV[1:0]=HH3—0.96—mADrive Strength for Output High Level for GPIO0I OmaxLL DRV[1:0]=LL3— 2.53—mA I OmaxLH DRV[1:0]=LH3— 2.21—mA I OmaxHL DRV[1:0]=HL3— 1.7—mA I OmaxHH DRV[1:0]=HH3—0.80—mALogic High Level Output Voltage V OH DRV[1:0]=HL V DD x0.8——V Logic Low Level Output Voltage V OL DRV[1:0]=HL——V DD x0.2V Notes:1.All minimum and maximum values are guaranteed across the recommended operating conditions of supply voltageand from –40 to +85°C unless otherwise stated. All typical values apply at V DD=3.3V and 25°C unless otherwise stated.2. 6.7ns is typical for GPIO0 rise time.3. Assuming VDD=3.3V, drive strength is specified at Voh (min)=2.64V and Vol(max)=0.66V at room temperature.4. 2.4ns is typical for GPIO0 fall time.Si4438-CTable 7. Thermal Operating CharacteristicsParameterValue Unit Operating Ambient Temperature Range T A –40 to +85︒C Thermal Impedance θJA 25︒C /W Junction Temperature T JMAX +105︒C Storage Temperature Range T STG–55 to +150︒CTable 8. Absolute Maximum Ratings*ParameterValue Unit V DD to GND–0.3, +3.8V Instantaneous V RF-peak to GND on TX Output Pin –0.3, +8.0V Sustained V RF-peak to GND on TX Output Pin –0.3, +6.5V Voltage on Digital Control Inputs –0.3, V DD + 0.3 V Voltage on Analog Inputs–0.3, V DD + 0.3V Voltage on XIN Input when using a TCXO –0.7, V DD + 0.3V RX Input Power+10dBm*Note: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. Theseare stress ratings only and functional operation of the device at or beyond these ratings in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Power Amplifier may be damaged if switched on without proper load or termination connected. TX matching network design will influence TX V RF-peak on TX output pin. Caution: ESD sensitive device.2. 功能描述Si4438 设备为高性能低电流的无线 ISM 收发器，可覆盖次千兆赫波段。

UART串口Si4438模块规格书

APC330 APC330经济型小功率无线数传模块DVER1.0APC330是高度集成低功耗半双工小功率无线数据传输模块，其嵌入高速低功耗单片机和高性能射频芯片SI4438，创新的采用高效的循环交织纠检错编码，抗干扰和灵敏度都大大提高，APC330提供了多个频道的选择，可在线修改串口速率，收发频率，发射功率，射频速率等各种参数。

APC330工作电压为3.5-5.5V，在接收状态下仅消耗16mA。

APC330能够透明传输任何大小的数据，而用户无须编写复杂的设置与传输程序，同时小体积应用：●无线电能表抄表●无线传感器●远距离无线通讯●自动化数据采集●工业遥控，遥测●智能仪器、仪表●楼宇小区自动化与安防●机器人控制宽电压运行，较远的传输距离，使之能够应用与非常广泛的领域。

特点：●1500米传输距离(1Kbps)●工作频率433MHz或470MHz●-120dBm@1Kbps高灵敏度●最大发射功率100mW(可设置)●多频道可设，双256Bytes数据缓冲区●高效的循环交织纠错编码●内置看门狗，保证长期可靠运行APC330是新一代的多通道嵌入式无线数传模块，可设置多个频道，步进为1KHz，发射功率最大100mW，体积32.1mm x18.3mm x7.0mm，很方便客户嵌入系统之内，APC330模块具有较低的功耗，非常适合于电池供电系统。

APC330创新的采用了高效的循环交织纠检错编码，其编码增益高达近3dBm，纠错能力和编码效率均达到业内的领先水平，远远高与一般的前向纠错编码，抗突发干扰和灵敏度都较大的改善。

同时编码也包含可靠检错能力，能够自动滤除错误及虚假信息，真正实现了透明的连接。

所以APC330特别适合于在工业领域等强干扰的恶劣环境中使用。

APC330内设双256Bytes大容量缓冲区，在缓冲区为空的状态下，用户可以1次传输256Bytes的数据，当设置空中波特率大于串口波特率时，可1次传输无限长度的数据，同时APC330提供标准的UART/TTL接口，七种速率和三种接口校验方式。

AO4430 规格书

AO443030V N-Channel MOSFETGeneral DescriptionThe AO4430 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion. RoHS and Halogen-Free CompliantProduct SummaryVDS (V) = 30V ID = 18A (VGS = 10V) RDS(ON) < 5.5mΩ (VGS = 10V) RDS(ON) < 7.5mΩ (VGS = 4.5V) 100% UIS Tested 100% Rg TestedSOIC-8 Top View D D D D G S S S G S Bottom View DAbsolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current AF Pulsed Drain Current Power Dissipation Avalanche Current B Repetitive avalanche energy 0.3mH B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead CBMaximum 30 ±20 18 15 80 3 2.1 30 135 -55 to 150Units V V AVGS TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD IAR EAR TJ, TSTGW A mJ °CSymbol t ≤ 10s Steady-State Steady-State RθJA RθJLTyp 31 59 16Max 40 75 24Units °C/W °C/W °C/WRev.6.0: May 2015Page 1 of 5Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=15A Forward Transconductance Diode Forward Voltage VDS=5V, ID=18A IS=1A,VGS=0V Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=10V, ID=18A TJ=125°C 1 80 4.7 6.5 6.2 82 0.7 1 4.5 4660 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 425 240 0.2 80 VGS=10V, VDS=15V, ID=18A 37 6060 638 355 0.45 103 48 18 15 12 VGS=10V, VDS=15V, RL=0.83Ω, RGEN=3Ω IF=18A, dI/dt=100A/µs 8 51.5 8.8 33.5 22 16 12 70 14 44 30 7270 960 530 0.9 124 58 5.5 8 7.5 1.8 Min 30 1 5 100 2.5 Typ Max Units V µA nA V A mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nCMaximum Body-Diode Continuous CurrentDYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistanceSWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=18A, dI/dt=100A/µsA: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.Rev.6.0: May 2015Page 2 of 5TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS60 10V 50 3.5V 40 ID (A) 30 20 10 VGS=2.5V 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 7.0 Normalized On On-Resistance 6.5 VGS=4.5V 6.0 RDS(ON) (mΩ) 5.5 5.0 4.5 4.0 3.5 0 20 40 60 80 100 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=10V 0 1 1.5 2 2.5 3 3.5 VGS(Volts) Figure 2: Transfer Characteristics 1.6 ID=18A VGS=4.5V ID(A) 40 125°C 30 20 10 25°C 4.5V 50 VDS=5V 603.0V1.4VGS=10V 1.210.8 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature161.0E+02 1.0E+0112 RDS(ON) (mΩ) ID=18A 8 125°C IS (A)1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 125°C25°C425°C0 2 4 6 8 10 1.0E-05 0.0 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode CharacteristicsRev.6.0: May 2015Page 3 of 5TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS10 8 VGS (Volts) 6 4 2 0 0 20 40 60 80 100 120 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=15V ID=18A Capacitance (pF) 6000 Ciss 800040002000CrssCoss0 0 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics100.0 RDS(ON) limited 10ms ID (Amps) 10.0 0.1s 1s 10s 1.0 TJ(Max)=150°C TA=25°C 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 DC 100µs 1ms Power (W) 10µs100 80 60 40 20 0 0.001 TJ(Max)=150°C TA=25°C1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)0.010.110 ZθJA Normalized Transient Thermal ResistanceD=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=75°C/WIn descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse10.1PD Ton Single PulseT 10 100 10000.01 0.000010.00010.0010.010.11Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal ImpedanceRev.6.0: May 2015Page 4 of 5Gate Charge Test Circuit & WaveformVgs Qg 10V+VD CDUT Vgs Ig+VDCVdsQgsQ gd-ChargeResistive Switching Test Circuit & WaveformsR L Vds VdsVgs Rg VgsDU T+VD C90% Vdd 10% Vgst d(on) tr t on t d(off) t off tfUnclamped Inductive Switching (UIS) Test Circuit & WaveformsL Vds Id Vgs Rg DU T Vgs Vgs VgsVDCEAR = 1/2 LI Vds2 ARBVDSS+ Vdd IdI ARDiode Recovery Test Circuit & WaveformsVds + DUT Vgs Vds Qrr = - IdtIsd VgsLIsdIFdI/dt IRMtrrVD C+ Vdd VdsVddIgRev.6.0: May 2015Page 5 of 5。

AO3422 规格书AOS

SymbolTyp Max 75100115150R θJL 4860Steady-State °C/W Thermal Characteristics Maximum Junction-to-Lead CSteady-State°C/WParameterUnits Maximum Junction-to-Ambient A t ≤ 10s R θJA °C/W Maximum Junction-to-Ambient A AO3422DG SGSDSymbolMin TypMaxUnits BV DSS 55V 1T J =55°C5I GSS ±100nA V GS(th)0.6 1.32V I D(ON)10A 125160T J =125°C175210157200m Ωg FS 11S V SD 0.781V I S1A C iss 214300pF C oss 31pF C rss 12.6pF R g1.33ΩQ g2.63.3nC Q gs 0.6nC Q gd 0.8nC t D(on) 2.3ns t r 2.4ns t D(off)16.5ns t f 2ns t rr 2030ns Q rr17nCTHIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.I F =2.1A, dI/dt=100A/µsI F =2.1A, dI/dt=100A/µsElectrical Characteristics (T J =25°C unless otherwise noted)ParameterConditions STATIC PARAMETERS Drain-Source Breakdown Voltage I D =10mA, V GS =0V I DSS Zero Gate Voltage Drain Current V DS =44V, V GS =0VµA Gate-Source leakage current V DS =0V, V GS =±12V Gate Threshold Voltage V DS =V GS I D =250µA On state drain currentV GS =4.5V, V DS =5V R DS(ON)Static Drain-Source On-ResistanceV GS =4.5V, I D =2.1Am ΩV GS =2.5V, I D =1.5AV GS =0V, V DS =0V, f=1MHzForward TransconductanceV DS =5V, I D =2.1ADiode Forward Voltage I S =1A Maximum Body-Diode Continuous CurrentDYNAMIC PARAMETERS Input Capacitance V GS =0V, V DS =25V, f=1MHz Output Capacitance Reverse Transfer Capacitance Turn-On Rise Time Turn-Off DelayTime Gate resistanceBody Diode Reverse Recovery TimeBody Diode Reverse Recovery Charge Turn-Off Fall TimeSWITCHING PARAMETERS Total Gate Charge V GS =4.5V, V DS =27.5V, I D =2.1AGate Source Charge Gate Drain Charge Turn-On DelayTime V GS =10V, V DS =27.5V, R L =12Ω, R GEN =3ΩA: The value of R θJA is measured with the device mounted on 1in 2FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.B: Repetitive rating, pulse width limited by junction temperature.C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.E. These tests are performed with the device mounted on 1 in 2FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The SOA curve provides a single pulse rating. Rev2: Sep 2010。