JEOL9300电子束光刻系统及其工艺介绍ppt课件
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Researcher: Andrew Ballinger*, Devin Brown**
*University of North Texas, **Georgia Tech Microelectronics Research Center
20 um
EBL
HSQ resist
spin coat
Silicon substrate
Biomedical Engineering, Georgia Tech
EBL + metal lift-off
500 nm
pattern
protein
adhesive protein
protein resistant group
Au
PR 250 nm
Si
5 mm
E-beam Lithography is used to produce patterned arrays presenting adhesive protein islands within nonfouling background to analyze cell adhesion.
High acceleration voltage (100kV) electron-beam lithography on ultra-thin silicon nitride substrate provide the excellent tool in determining the intrinsic resolution of the novel chemically amplified resists.
develop
Байду номын сангаас
resist strip
resist strip
8/16/06
11nm
80nm line 70nm space
30nm diameter
150nm line
80nm line 2
Nanopatterned Protein Arrays
Graduate Student: Sean Coyer, PI: Andres Garcia
Patterns on nitride membrane
20 um
3.5nm gap
Film thickness: 75nm
Shot pitch: 10nm
Current: 2nA;
Dose: 120 uC/cm2
30 nm half pitch pattern on novel EUV resist
resist trim
Plasma Etch
stamp
NIL 3.5nm gap
PMMA resist
e- e-
e- e- e-
7nm
Silicon substrate
oxide
10 MINUTES!! / REUSABLE
exposure 10 HOURS!!
silicon etch
imprint
8/16/06
4
Chemically Amplified Resist for Nanoscale Patterns
Researcher: Cheng-Tsung Lee, Cliff Henderson
Georgia Tech Chemical and Biological Engineering
100 mm
cells
8/16/06
3
Nanoscale Resonator
Researcher: Michael Kranz*, Mark Allen**
*Stanley Associates, **Georgia Tech Electrical Engineering
20 um
3.5nm gap
JEOL JBX-9300FS Electron Beam Lithography System
Georgia Tech Microelectronics Research Center
Enabling Nanotechnology
8/16/06
1
Nanoimprint Embossing Stamps
An array of these nanoscale resonators form a high-speed parallel-processing spectrum analyzer for signals in the 100's to 1000's of MHz. A two-step hybrid lithographic approach allowed the large features of the device, including anchors, RF waveguides, and electrodes to be patterned using traditional optical lithography after the micron, submicron, and nanoscale features were patterned using Georgia Tech's JEOL EBL system. The device was formed in a thin silicon film sputtered on top of a thin silicon dioxide film that served as a release layer during a standard HF oxide etch. Patterning was accomplished through first exposing a PMMA electron beam resist and subsequently transferring that pattern to a thin chrome layer used as a mask for transferring the pattern to the device silicon.
Novel EUV resist shows the inherent resolution in patterning 30 nm half pitch line/sapce array with low CD variation and LER.
8/16/06
*University of North Texas, **Georgia Tech Microelectronics Research Center
20 um
EBL
HSQ resist
spin coat
Silicon substrate
Biomedical Engineering, Georgia Tech
EBL + metal lift-off
500 nm
pattern
protein
adhesive protein
protein resistant group
Au
PR 250 nm
Si
5 mm
E-beam Lithography is used to produce patterned arrays presenting adhesive protein islands within nonfouling background to analyze cell adhesion.
High acceleration voltage (100kV) electron-beam lithography on ultra-thin silicon nitride substrate provide the excellent tool in determining the intrinsic resolution of the novel chemically amplified resists.
develop
Байду номын сангаас
resist strip
resist strip
8/16/06
11nm
80nm line 70nm space
30nm diameter
150nm line
80nm line 2
Nanopatterned Protein Arrays
Graduate Student: Sean Coyer, PI: Andres Garcia
Patterns on nitride membrane
20 um
3.5nm gap
Film thickness: 75nm
Shot pitch: 10nm
Current: 2nA;
Dose: 120 uC/cm2
30 nm half pitch pattern on novel EUV resist
resist trim
Plasma Etch
stamp
NIL 3.5nm gap
PMMA resist
e- e-
e- e- e-
7nm
Silicon substrate
oxide
10 MINUTES!! / REUSABLE
exposure 10 HOURS!!
silicon etch
imprint
8/16/06
4
Chemically Amplified Resist for Nanoscale Patterns
Researcher: Cheng-Tsung Lee, Cliff Henderson
Georgia Tech Chemical and Biological Engineering
100 mm
cells
8/16/06
3
Nanoscale Resonator
Researcher: Michael Kranz*, Mark Allen**
*Stanley Associates, **Georgia Tech Electrical Engineering
20 um
3.5nm gap
JEOL JBX-9300FS Electron Beam Lithography System
Georgia Tech Microelectronics Research Center
Enabling Nanotechnology
8/16/06
1
Nanoimprint Embossing Stamps
An array of these nanoscale resonators form a high-speed parallel-processing spectrum analyzer for signals in the 100's to 1000's of MHz. A two-step hybrid lithographic approach allowed the large features of the device, including anchors, RF waveguides, and electrodes to be patterned using traditional optical lithography after the micron, submicron, and nanoscale features were patterned using Georgia Tech's JEOL EBL system. The device was formed in a thin silicon film sputtered on top of a thin silicon dioxide film that served as a release layer during a standard HF oxide etch. Patterning was accomplished through first exposing a PMMA electron beam resist and subsequently transferring that pattern to a thin chrome layer used as a mask for transferring the pattern to the device silicon.
Novel EUV resist shows the inherent resolution in patterning 30 nm half pitch line/sapce array with low CD variation and LER.
8/16/06