1N4148W二极管选型资料 打标代码T4
1N4148、1N4150、1N4448 开关二极管
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1N4148W二极管选型资料 打标代码T4
A,Mar,2011
【南京南山—领先的片式无源器件整合供应商】
Typical Characteristics
Forward Characteristics
【南京南山—领先的片式无源器件整合供应商】
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-123 Plastic-Encapsulate Diodes
BAV16W/1N4148W FAST SWITCHING DIODE
Ta=100 oC
100 Ta=25 oC
10
1
0
20
40
60
80
100
REVERSE VOLTAGE V (V) R
Capacitance Characteristics
1.6 Ta=25℃ f=1MHz
1.4
1.2
1.0
0.8
0.6
0
4
8
12
16
20
REVERSE VOLTAGE V (V) R
【领先的片式无源器件整合供应商—南京南山半导体有限公司】
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POWER DISSIPATION PD (mW)
FH1N4148(LL-34-DO-35)贴片式开关二极管规格书
ఎਈऔ!Switching DiodeSwitching Diode ఎਈऔFH1N41481DESCRIPTION & FEATURES 概述及特點Low forward voltage 低正向壓降Fast reverse recovery time 快恢復時間 Ultra High Speed Switching Application 超高速開關應用PIN ASSIGNMENT 引腳說明PIN NUMBER 引腳序號PIN NAME 管腳符號 LL-34/DO-35FUNCTION 功能 A 1 Anode C 2 CathodeLL-34DO-35Maximum Ratings&Thermal Characteristics (T a =25℃) 最大額定值及熱特性CHARACTERISTIC 特性參數 Symbol符號 Value 數值 Unit 單位Maximum Peak Repetitive Reverse Voltage最大反向峰值電壓V RRM 100 V Maximum RMS Voltage 反向電壓V RMS 75 V Voltage Rise when Switching ON Tested with 50mA Forward Pulses Tp=0.1s, Rise Time ＜30ns, fp=5 to 100KHzV FR 2.5 V Rectifier Current (average) Half Wave Rectification with Resist.Load At T A =25℃ andf ≥50Hz 半波整流電流 I O 150 mA Surge Forward Current at t ＜1s and T A =25℃I FSM 500 mA Power Dissipation at T A =25℃PTOT 500 mW Thermal Resistance Junction to ambient air 熱阻 R ΘJA0.35℃/mW Junction and Storage Temperature 結溫和儲存溫度T J ,T STG 175,-65~150℃ELECTRICAL CHARACTERISTICS 電特性(T A =25℃ unless otherwise noted 如無特殊說明，溫度為25℃)Characteristic 特性參數Symbol 符號 Test Condition 測試條件 Min 最小值TYPE 典型值 Max 最大值Unit單位Forward Voltage 正向電壓V F I F =10mA — — 1.0 V Reverse Voltage 反向電壓V RI R =100µA 75 — — V V R =20V — — 25 nAV R =75V — — 5 µA Reverse Voltage LeakageCurrent 反向漏電流I RV R =20V, Tj=150℃ — — 50 µATotal Capacitance 電容 C T V R =0,f = 1.0MHz — — 4.0 pF Reverse Recovery Time 反向恢復時間 t rr From IF=10mA toIR=1mA,VR=6V,R=100Ω— — 4 nSRectification Efficiency整流效率ηr f =100MHZ, VRF =2V 0.45 — — —。
1N4148WS
1N4148WS / 1N4448WS / 1N914BWS — Small Signal Diodes1N4148WS / 1N4448WS / 1N914BWS — Small Signal Diodes1N4148WS / 1N4448WS / 1N914BWS Small Signal Diodes1N4148WS / 1N4448WS / 1N914BWSRev. I31TRADEMARKSThe following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use andis not intended to be an exhaustive list of all such trademarks.DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systemswhich, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2.A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of Terms ACEx ®Build it Now™CorePLUS™CROSSVOLT ™CTL™Current Transfer Logic™EcoSPARK ®Fairchild ®Fairchild Semiconductor ®FACT Quiet Series™FACT ®FAST ®FastvCore™FPS™FRFET ®Global Power Resource SMGreen FPS™Green FPS™ e-Series™GTO™i-Lo ™IntelliMAX™ISOPLANAR™MegaBuck™MICROCOUPLER™MicroFET™MicroPak™MillerDrive™Motion-SPM™OPTOLOGIC ®OPTOPLANAR ®®PDP-SPM™Power220®Power247®POWEREDGE ®Power-SPM™PowerTrench ®Programmable Active Droop™QFET ®QS™QT Optoelectronics™Quiet Series™RapidConfigure™SMART START™SPM ®STEALTH™SuperFET™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™The Power Franchise ®TinyBoost™TinyBuck™TinyLogic ®TINYOPTO™TinyPower™TinyPWM™TinyWire™µSerDes™UHC ®UniFET™VCX™Datasheet IdentificationProduct StatusDefinitionAdvance Information Formative or In DesignThis datasheet contains the design specifications for product development. Specifications may change in any manner without notice.Preliminary First ProductionThis datasheet contains preliminary data; supplementary data will be pub-lished at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontin-ued by Fairchild semiconductor. The datasheet is printed for reference infor-mation only.。
1N4448WT中文资料
1N4148WT / 1N4448WT / 1N914BWT — High Conductance Fast Switching Diode1N4148WT / 1N4448WT / 1N914BWT — High Conductance Fast Switching Diode Package DimensionSOD-523F1N4148WT / 1N4448WT / 1N914BWT High Conductance Fast Switching Diode1N4148WT / 1N4448WT / 1N914BWTRev. I31TRADEMARKSThe following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use andis not intended to be an exhaustive list of all such trademarks.DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systemswhich, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2.A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of Terms ACEx ®Build it Now™CorePLUS™CROSSVOLT ™CTL™Current Transfer Logic™EcoSPARK ®Fairchild ®Fairchild Semiconductor ®FACT Quiet Series™FACT ®FAST ®FastvCore™FPS™FRFET ®Global Power Resource SMGreen FPS™Green FPS™ e-Series™GTO™i-Lo ™IntelliMAX™ISOPLANAR™MegaBuck™MICROCOUPLER™MicroFET™MicroPak™MillerDrive™Motion-SPM™OPTOLOGIC ®OPTOPLANAR ®®PDP-SPM™Power220®Power247®POWEREDGE ®Power-SPM™PowerTrench ®Programmable Active Droop™QFET ®QS™QT Optoelectronics™Quiet Series™RapidConfigure™SMART START™SPM ®STEALTH™SuperFET™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™The Power Franchise ®TinyBoost™TinyBuck™TinyLogic ®TINYOPTO™TinyPower™TinyPWM™TinyWire™µSerDes™UHC ®UniFET™VCX™Datasheet IdentificationProduct StatusDefinitionAdvance Information Formative or In DesignThis datasheet contains the design specifications for product development. Specifications may change in any manner without notice.Preliminary First ProductionThis datasheet contains preliminary data; supplementary data will be pub-lished at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontin-ued by Fairchild semiconductor. The datasheet is printed for reference infor-mation only.。
1N4148W-V-GS18中文资料
1N4148W-VDocument Number 85748Rev. 1.4, 14-Sep-07Vishay Semiconductors117431Small Signal Fast Switching DiodeFeatures•These diodes are also available in other case styles including the DO35 case withthe type designation 1N4148, the MiniMELF case with the type designation LL4148, and the SOT23 case with the type designation IMBD4148-V. •Silicon epitaxial planar diode •Fast switching diodes•Lead (Pb)-free component•Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/ECMechanical DataCase: SOD123 plastic case Weight: approx. 10.3 mg Packaging Codes/Options:GS18/10 k per 13" reel (8 mm tape), 10 k/box GS08/3 k per 7" reel (8 mm tape), 15 k/boxParts TableAbsolute Maximum RatingsT amb = 25°C, unless otherwise specifiedNote:1)Valid provided that electrodes are kept at ambient temperature.Thermal CharacteristicsT amb = 25°C, unless otherwise specifiedNote:1)Valid provided that electrodes are kept at ambient temperature.PartOrdering codeMarking Remarks 1N4148W-V1N4148W-V-GS18 or 1N4148W-V-GS08A2Tape and ReelParameterT est conditionSymbol Value Unit Reverse voltageV R 75V Repetitive peak reverse voltage V RRM 100V Average rectified current half wave rectification with resistive loadf ≥ 50 Hz I F(AV)1501)mA Surge forward current t < 1 s and T j = 25°CI FSM 500mA Power dissipationP tot3501)mWParameterTest conditionSymbol Value Unit Thermal resistance junction to ambient air R thJA 3571)K/W Junction temperature T j 150°C Storage temperatureT stg- 65 to + 150°C 2Document Number 85748Rev. 1.4, 14-Sep-071N4148W-VVishay Semiconductors Electrical CharacteristicsT amb = 25°C, unless otherwise specifiedRectification Efficiency Measurement CircuitParameterTest condition Symbol MinTyp.Max Unit Forward voltageI F = 10 mA V F 1000mV I F = 100 mA V F 1200mV Leakage currentV R = 20 VI R 25nA V R = 75 V I R 5µA V R = 100 V I R 100µA V R = 20 V , T J = 150°CI R 50µA Diode capacitanceV F = V R = 0 VC D 4pF Voltage rise when switching ON (tested with 50 mA pulses)tested with 50 mA pulses, t p = 0.1 µs, rise time < 30 ns,f p = (5 to 100) kHz V fr 2.5VReverse recovery time I F = 10 mA, I R = 1 mA, V R = 6 V,R L = 100 Ωt rr 4nsRectification efficiencyf = 100 MHz, V RF = 2 Vην0.451N4148W-VDocument Number 85748Rev. 1.4, 14-Sep-07Vishay Semiconductors3Typical CharacteristicsT amb = 25°C, unless otherwise specifiedFigure 1. Forward characteristics Figure 2. Dynamic Forward Resistance vs. Forward Current Figure3. Admissible Power Dissipation vs. Ambient Temperature17437012V F (V )I F (m A )10-110-211010210317438f = 1 kHzT j = 25 °C I F (mA)r f (Ω)1010210310410-210-111021025252525Figure 4. Relative Capacitance vs. Reverse VoltageFigure 5. Leakage Current vs. Junction Temperature17440V R (V )0.70.80.91.01.1f = 1 MHzT j = 25 °C 2086410C D (V R )C D (0 V)17441T j (°C)I R (n A )10102103104100200252525251 4Document Number 85748Rev. 1.4, 14-Sep-071N4148W-VVishay SemiconductorsPackage Dimensions in millimeters (inches): SOD123Figure 6. Admissible Repetitive Peak Forward Current vs. Pulse Duration17442t P (s)I F R M (A )10013510-510-410-31010-110-225252525252524103524135240.11N4148W-VDocument Number 85748Rev. 1.4, 14-Sep-07Vishay Semiconductors5Ozone Depleting Substances Policy StatementIt is the policy of Vishay Semiconductor GmbH to1.Meet all present and future national and international statutory requirements.2.Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.1.Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.We reserve the right to make changes to improve technical designand may do so without further notice.Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associatedwith such unintended or unauthorized use.Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, GermanyDocument Number: 91000Revision: 18-Jul-081DisclaimerLegal Disclaimer NoticeVishayAll product specifications and data are subject to change without notice.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.Product names and markings noted herein may be trademarks of their respective owners.元器件交易网。
1N4148WT-7-F中文资料
Features• Fast Switching Speed• Ultra-Small Surface Mount Package• For General Purpose Switching Applications • High Conductance• Lead Free By Design/RoHS Compliant (Note 1)• Qualified to AEC-Q101 Standards for High Reliability •“Green” Device, Notes 4 and 5Mechanical Data• Case: SOD-523• Case Material: Molded Plastic, “Green” Molding Compound, Note 5. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020D • Terminal Connections: Cathode Band• Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 • Marking Information: See Page 2 • Ordering Information: See Page 2 •Weight: 0.0014 grams (approximate)SOD-523TOP VIEWMaximum Ratings @T A = 25°C unless otherwise specifiedCharacteristic Symbol Value UnitNon-Repetitive Peak Reverse Voltage V RM 100 V Reverse Voltage V R 80 V RMS Reverse Voltage V R(RMS) 53 V Forward Continuous Current I FM 250 mA Average Rectified Output Current I O125 mA Non-Repetitive Peak Forward Surge Current @ t = 1.0μs@ t = 100msI FSM2.0 1.0 AThermal CharacteristicsCharacteristic Symbol Value UnitPower Dissipation (Note 2) P D150 mW Thermal Resistance Junction to Ambient Air (Note 2) R θJA 833 °C/W Operating and Storage Temperature Range T J , T STG -65 to +150 °CElectrical Characteristics @T A = 25°C unless otherwise specifiedCharacteristic Symbol Min Max Unit Test Conditions Reverse Breakdown Voltage (Note 3) V (BR)R 75 ⎯ V I R = 1.0μAForward Voltage V F⎯ 0.7150.8551.0 1.25 V I F = 1.0mA I F = 10mA I F = 50mA I F = 150mAPeak Reverse Current (Note 3) I R⎯ 1.050 30 25 μA μAμA nA V R = 75V V R = 75V, T J = 150°C V R = 25V, T J = 150°C V R = 20VTotal Capacitance C T ⎯ 2.0 pF V R = 0, f = 1.0MHzReverse Recovery Time t rr ⎯4.0 ns I F = I R = 10mA,I rr = 0.1 x I R , R L = 100ΩNotes:1. No purposefully added lead.2. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at /datasheets/ap02001.pdf.3. Short duration pulse test used to minimize self-heating effect.4. Diodes Inc.'s "Green" policy can be found on our website at /products/lead_free/index.php.5. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.5075P , P O W E R D I S S I P A T I O N (m W )D T , AMBIENT TEMPERATURE (C)Fig. 1 Power Derating CurveA °I , I N S T A N T A N E O U S F O R W A R D C U R R E N T (A )F V , INSTANTANEOUS FORWARD VOLTAGE (V)Fig. 2 Typical Forward Characteristics FV , INSTANTANEOUS REVERSE VOLTAGE (V)Fig. 3 Typical Reverse Characteristics R I , I N S T A N T A N E O U S R E V E R S E C U R R E N T (n A )R20C , T O T A L C A P A C I T A N C E (p F )T V , DC REVERSE VOLTAGE (V)Fig. 4 Total Capacitance vs. Reverse Voltage ROrdering Information (Notes 5 & 6)Part NumberCase Packaging 1N4148WT-7SOD-523 3000/Tape & ReelNotes: 6. For packaging details, go to our website at /datasheets/ap02007.pdf.Marking InformationT4Cathode BandT4 = Product Type Marking CodePackage Outline DimensionsSuggested Pad LayoutIMPORTANT NOTICEDiodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.LIFE SUPPORTDiodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.SOD-523 Dim Min Max A 1.50 1.70 B 1.10 1.30 C 0.25 0.35 D 0.70 0.90 E 0.10 0.20 G 0.50 0.70 All Dimensions in mmZXCG Y Dimensions Value (in mm)Z 2.3 G 1.1 X 0.8 Y 0.6 C 1.7。
1N4148的简介
二：1N4148的应用
1N4148是一种小型的高速开关二极管，开关比较迅速，广泛用于信号频率较高的电路进行单向导通隔离，通讯电脑板，电视机电路及工业控制电路中常用它。
三：1N4148的特点
1：快速开关速度
2:玻璃高可靠性等ABA封装版本
3:高导电
正向电压和结温电流和电压
电流和电压反向电流与反向电压
4:备有通孔和表面
三：参数表格
平均电流
200mA
连续正向电流
300mA
最大电流
500mA
反向峰值电压
100mV
最大正向电压
1V
击穿电压
当I=5uA U=75V当I=100uA U=100V
电容
当V=0 C=4.0pF
最大反向恢复时间
4nS
工作温度
-65℃——200℃
存储温度
-65℃——200℃
总功率
500mW
反相漏电流
当U=75V，T=150℃时I=500A注：每次使用时引用4301—A的参数If=10mA U=6V Rl=100Ω.除非另有说明！
四：封装0.458_0.558mm
25.4mm3.05_5.08mm1.53_2.28mm
封装形式：Do—35
针脚数：2
表面安装器件：轴向引线
五：特性曲线
参数表格平均电流200ma连续正向电流300ma最大电流500ma反向峰值电压100mv最大正向电压1v击穿电压当i5uau75v当i100uau100v电容c40pf最大反向恢复时间4ns工作温度65200存储温度65200总功率500mw反相漏电流当u75vt150时i500ma注
1N4148的参数介绍
FOSAN富信电子 二级管 1N4148WS-产品规格书
安徽富信半导体科技有限公司ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.1N4148WSSOD-323Switching Diode 开关二极管■Features 特点Fast Switching Speed 快的开关速度Surface mount device 表面贴装器件High Conductance 高电导率Case 封装:SOD-323Marking 印字：T4■Maximum Rating 最大额定值(T A =25℃unless otherwise noted 如无特殊说明，温度为25℃)Characteristic 特性参数Symbol 符号Rating 额定值Unit 单位Non-Repetitive Peak Reverse Voltage 不重复反向峰值电压V RM 100V DC Reverse Voltage 直流反向电压V R 75V Peak Repetitive Reverse Voltage 峰值重复反向电压V RRM 75V Woke Peak Reverse Voltage 峰值反向工作电压V RWM 75V RMS Reverse Voltage 反向电压均方根值V R(RMS)53V Forward Rectified Output Current 正向工作电流I O 200mA Non-Repetitive Peak Surge Current@t=1µS 不重复峰值浪涌电流@t=1S I FSM 21A Power Dissipation 耗散功率P D 200mW Thermal Resistance Junction-Ambient 结到环境热阻R θJA 625℃/W Junction/StorageTemperature 结温/储藏温度T J,T stg-50to+150℃℃■Electrical Characteristics 电特性(T A =25℃unless otherwise noted 如无特殊说明，温度为25℃)Characteristic 特性参数Symbol 符号Min 最小值Max 最大值Unit 单位Condition 条件Reverse Voltage 反向电压V R75VI R =1µA Forward Voltage 正向电压V F 0.7150.8551.01.25V I F =1mA I F =10mA I F =50mA I F =150mA Reverse Current 反向电流I R 125µA nA V R =75V V R =20V Junction Capacitance 结电容C J2pFV R =4V,f=1MHz安徽富信半导体科技有限公司ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.1N4148WS ■Typical Characteristic Curve典型特性曲线■Dimension外形封装尺寸。
丝印w1二极管参数
丝印w1二极管参数
丝印W1二极管通常指的是1N4148型号的二极管。
1N4148是一种快速开关二极管，常用于一般目的的快速开关和整流应用。
下面是关于1N4148二极管的一些参数：
1. 最大反向工作电压，1N4148二极管的最大反向工作电压为100V。
这意味着在正向工作时，它可以承受高达100V的反向电压，超过这个电压可能会损坏二极管。
2. 最大连续正向电流，1N4148二极管的最大连续正向电流为300mA。
这意味着在正向工作时，它可以承受高达300mA的电流，超过这个电流可能会损坏二极管。
3. 正向压降，1N4148二极管的正向压降在标准条件下约为
0.7V。
这意味着在正向工作时，它需要至少0.7V的电压才能开始导通。
4. 封装类型，1N4148二极管通常采用小型塑料封装，方便安装和使用。
总的来说，1N4148二极管是一种常用的快速开关二极管，具有较高的反向工作电压和正向电流能力，适用于多种电子电路应用。
希望这些信息能够满足你的需求。
1N4148_datasheetT4
Symbol Reverse Voltage Peak Reverse Voltage Rectified Current (Average) Half Wave Rectification with Resist. Load at Tamb = 25 °C and f ≥ 50 Hz Surge Forward Current at t < 1 s and Tj = 25 °C Power Dissipation at Tamb = 25 °C Junction Temperature Storage Temperature Range
Rectification Efficiency Measurement Circuit
RATINGS AND CHARACTERISTIC CURVES 1N4148
RATINGS AND CHARACTERISTIC CURVES 1N4148
1)
Min. –
Typ. –
Max. 1
Unit V
VF
IR IR IR Ctot Vfr
– – – – –
– – – – –
25 5 50 4 2.5
nA µA µA pF V
trr
–
–
4
ns
RthJA ηv
– 0.45
– –
3501) –
K/W –
Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature (DO-35)
MIC INVESTMENTS (CHINA) COMPANY LIMITED
ELECTRICAL CHARACTERISTICS
二极管1N4148WS (2)
Surface Mount Schottky Barrier Rectifiers Reverse Voltage 20 to 60 Volts Forward Current 1.0 Ampere
Features
For surface mounted applications Metal-Semiconductor junction with guardring Epitaxial construction Very low forward voltage drop High current capability Plastic material has UL flammability classification 94V-0 For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications
Mechanical Data
Case : JEDEC DO-214AC(SMA) molded plastic Polarity : Indicated by cathode band Weight : 0.002 ounce, 0.064 gram
Maximum Ratings and Electrical Characteristics
Ratings at 25oC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% Parameter Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current @TL=100 C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum forward voltage at 1.0A DC Maximum DC reverse current at rated DC blocking voltage @TJ=25oC @TJ=100oC
型号1N4148W（VISHAY）中文数据手册「EasyDatasheet」
型号1N4148W（VISHAY）中文数据手册「EasyDatasheet」峰值反向电压：100V 正向电流：150mASOD-123 (1N4148W).022 (0.55)SOD-323 (1N4148WS).012 (0.3)阴极频带.112 (2.85).100 (2.55).076 (1.95)阴极频带.065 (1.65).152 (3.85).140 (3.55).112 (2.85).100 (2.55)顶视图顶视图.059 (1.5).053 (1.35)max..006 (0.15)max..004 (0.1)max..067 (1.70).055 (1.40).010 (0.25)m in..010 (0.25)min.安装焊盘布局（SOD-123）0.094 (2.40)0.055 (1.40)0.055 (1.40)安装焊盘布局（SOD-323）0.055(1.40)0.062(1.60)0.047 (1.20)特征硅外延平面二极管?快速开关二极管这些二极管也可在其他情况下,可用款式包括DO-35情况下类型名称1N4148MiniMELF 情况下与类型指定LL4148和SOT-23例类型名称IMBD4148.机械数据Case:1N4148W = SOD-123塑料外壳1N4148WS = SOD-323塑料外壳重量：1N4148W =约. 0.01克1N4148WS =约. 0.004克标识代码：1N4148W = A21N4148WS = A2包装代码/选项：SOD-123：每13"卷（8mm 带）,30K /盒D3/10KD4/3K 每7"卷轴（8mm 带）,30K /盒SOD-323：每13"卷（8mm 带）,30K /盒D5/10KD6/3K 每7"卷轴（8mm 带）,30K /盒4/21/00.006 (0.15)m ax..004 (0.1)m ax..043 (1.1).049 (1.25)m ax.最大额定值和热特性(T 参数反向电压峰值反向电压平均整流电流半波整流阻性负载在T am b= 25°C和F 50赫兹正向电流浪涌在t 1和TJ = 25℃功耗在T am b= 25°C 热阻结到环境空气结温储存温度1N4148W1N4148WS1N4148W1N4148WS1N4148W1N4148WS符号V RV R MI F(AV)= 25°C unles s otherwis e noted)限75100150(1)500350400(1)200(1)450(1)650(1)150-65到+150单元VVmAI FSMP totR JAT jT SmAmW°C/W°C°C电气特性(T 参数正向电压泄漏电流电容接通时,电压上升（50mA脉冲测试）反向恢复时间整流效率= 25°C unles s otherwis e noted)符号V FI RC totV frt rr测试条件I F= 10mAV R= 20VV R= 75VV R= 20V, T J= 150°CV F= V R= 0Vt p= 0.1μS,上升时间为30ns f p= 5至100kHzI F= 10mA, I R =1mA,V R= 6V , R L= 100?f = 100MHz, V R F= 2V Min———————0.45Typ————————Max1.0255.05042.54—单元VnAμAμApFnsns—Note:(1) Valid provided that electrodes are k ept at ambient temperature.整流效率测量电路评分和特性曲线(T= 25°C unles s otherwis e noted)评分和特性曲线(T= 25°C unles s otherwis e noted)。
贴片开关二极管 1N4148W SOD-123 规格书推荐
Note 1:Device mounted on 1''x1'' FR4 PCB,1oz single-side copper.
1
D,Nov,2017
ELECTRICAL CHARACTERISTICS
Electrical Ratings @Ta=25℃
Parameter Symbol VF1 Forward voltage VF2 VF3 VF4 Reverse current Capacitance between terminals Reverse recovery time IR1 IR2 CT trr Min Typ Max 0.715 0.855 1.0 1.25 1 25 2 4 Unit V V V V μA nA pF ns Conditions IF=1mA IF=10mA IF=50mA IF=150mA VR=75V VR=20V VR=0V,f=1MHz IF=IR=10mA Irr=0.1XIR,RL=100Ω
Parameter Non-Repetitive Peak Reverse Voltage Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current Average Rectified Output Current Non-Repetitive Peak Forward Surge Current @ t=8.3ms Power Dissipation 1N4148W BAV16W Thermal Resistance from Junction to Ambient(Note 1) Junction Temperature Storage Temperature Symbol VRM VRRM VRWM VR VR(RMS) IFM IO IFSM Pd RθJA Tj TSTG 71 300 150 2.0 350 400 250 150 -55~+150 V mA mA A mW ℃/W ℃ ℃ 100 V Limit 100 Unit V
1N4148WS规格书
Amissible repetitive peak forward current vs. pulse duration
1.1 Tj=25 C f=1MHz
100
5 4 3 2
1.0
Ctot (VR) Ctot (0 V)
10
I FRM (A)
0.9
5 4 3 2
V=0 0.1 0.2 0.5
0.8
PINNING PIN 1 2
1
DESCRIPTION Cathode Anode
2
W2
Top View Marking Code: "W2" Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage Reverse Voltage Average Rectified Forward Current Surge Forward Current (t < 1 s, Tj = 25 OC) Power Dissipation Thermal Resistance from Junction to Ambient Air Junction Temperature Storage Temperature Range
IR
Ctot trr
SEMTECH ELECTRONICS LTD.
Subsidiary of Sino-Tech International (BVI) Limited
®
Dated : 22/07/2010 Rev:01
1N4148WS
Forward characteristics 10
1N4148T中文资料
Silicon Epitaxial Planar DiodesMax Unit1001000m A ) 1 N 4448TELEFUNKEN Semiconductors4 (4)Ozone Depleting Substances Policy StatementIt is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1.Meet all present and future national and international statutory requirements.2.Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.1.Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.We reserve the right to make changes to improve technical design and may do so without further notice .Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,directly or indirectly, any claim of personal damage, injury or death associated with such unintended orunauthorized use.TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, GermanyTelephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423。
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FORWARD CURRENT IF (mA)
Ta=100 oC Ta=25 oC
100
10
1
0.1
0.01
0.0
0.4
0.8
1.2
1.6
FORWARD VOLTAGE V (V) F
REVERSE CURRENT IR (nA)
BAV16W/1N4148W
10000 1000
Reverse Characteristics
+
-
MARKING: T6,T4 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Parameter
Non-Repetitive Peak Reverse Voltage Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current Average Rectified Output Current Peak Forward Surge Current @t=1.0μs
【领先的片式无源器件整合供应商—南京南山半导体有限公司】
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@t =1.0s Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature
Symbol VRM VRRM VRWM VR
VR(RMS) IFM IO
IFSM
Pd
RθJA
Tj TSTG
Limit 100
100
71 300 150 2.0 1.0 500 250 150 -55~+150
Electrical Ratings @Ta=25℃
Parameter
Forward voltage
Reverse current Capacitance between terminals
POWER DISSIPATION PD (mW)
Power Derating Curve
600
500
400
300
200
100
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE T (℃ ) a
CAPACITANCE BETWEEN TERMINALS C (pF)
T
A,Mar,2011
IF=150mA VR=75V VR=20V VR=0V,f=1MHz IF=IR=10mA Irr=0.1XIR,RL=100Ω
A,Mar,2011
【南京南山—领先的片式无源器件整合供应商】
Typical Characteristics
ቤተ መጻሕፍቲ ባይዱ
Forward Characteristics
【南京南山—领先的片式无源器件整合供应商】
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-123 Plastic-Encapsulate Diodes
BAV16W/1N4148W FAST SWITCHING DIODE
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第1页共1页
Ta=100 oC
100 Ta=25 oC
10
1
0
20
40
60
80
100
REVERSE VOLTAGE V (V) R
Capacitance Characteristics
1.6 Ta=25℃ f=1MHz
1.4
1.2
1.0
0.8
0.6
0
4
8
12
16
20
REVERSE VOLTAGE V (V) R
SOD-123
FEATURES z Fast Switching Speed z Surface Mount Package Ideally Suited for Automatic Insertion z For General Purpose Switching Applications z High Conductance
Symbol Min Typ Max Unit
VF1
0.715 V
VF2
0.855 V
VF3
1.0
V
VF4
1.25
V
IR1
1
μA
IR2
25
nA
CT
2
pF
Reverse recovery time
trr
4
ns
Unit V
V
V mA mA A mW ℃/W ℃ ℃
Conditions IF=1mA IF=10mA IF=50mA