SSC8631GS1规格书

SSC8631GS1

Complementary Enhancement Mode Field Effect Transistor

z Features z Applications

N-Channel

VDS VGS RDSon TYP ID

30V±20V 22mR@-10V

7A 35mR@-4V5

P-Channel

VDS VGS RDSon TYP ID

-30V±20V 27mR@-10V

-6.5A

39mR@-4V5

¾Inverter

¾CCFL Driver

z Pin configuration

Top View

z General Description

SSC8631GS1uses advanced trench technology to provide

excellent R DS(ON)and low gate charge.The complementary

MOSFETs may be used to form a level shifted high side

switch,and for a host of other applications.

z Package

Information

z Absolute Maximum Ratings@T A=25°C unless otherwise noted

Parameter Symbol N-channel P-channel Unit Drain-Source Voltage V DSS30-30V Gate-Source Voltage V GSS±20±20V Continuous Drain Current(Note1)I D7-6A Plused Drain Current(Note2)I DM30-30A Total Power Dissipation(Note1)P D11W Operating and Storage Junction Temperature Range T J,T STG-55to+150-55to+150°C

SSC8631GS1 z N-channel Electrical Characteristics@T A=25°C unless otherwise noted

Parameter Symbol Test Conditions Min Typ Max Unit Drain–Source Breakdown Voltage V(BR)DSS V GS=0V,I D=250uA30----V Gate Threshold Voltage V GS(TH)V DS=V GS,I D=250uA1 1.53V Gate–Body Leakage Current I GSS V GS=±20V,V DS=0V----±100nA Zero Gate Voltage Drain Current I DSS V DS=24V,V GS=0V----1uA

Drain–Source On–State Resistance R DS(ON)

V GS=10V,I D=5A--2228

mR V GS=4.5V,I D=5A--3540

Forward Transconductance G FS V DS=5V,I D=5A--7.3--S Diode Forward Voltage V SD V GS=0V,I S=1A--0.76 1.7V

Input Capacitance C ISS

V DS=15V,V GS=0V,

f=1.0MHz --407--

pF

Output Capacitance C OSS--113--Reverse Transfer Capacitance C RSS--57--

Turn–On Delay Time T D(ON)V DS=15V,R L=2.3R,

V GS=10V,R GEN=3R ----18

nS

Turn–Off Delay Tim T D(OFF)----70

z P-channel Electrical Characteristics@T A=25°C unless otherwise noted

Parameter Symbol Test Conditions Min Typ Max Unit Drain–Source Breakdown Voltage V(BR)DSS V GS=0V,I D=-250uA-30----V Gate Threshold Voltage V GS(TH)V DS=V GS,I D=-250uA-1-1.5-3V Gate–Body Leakage Current I GSS V GS=±20V,V DS=0V----±100nA Zero Gate Voltage Drain Current I DSS V DS=-24V,V GS=0V-----1uA

Drain–Source On–State Resistance R DS(ON)

V GS=-10V,I D=-6A--2735

mR V GS=-4.5V,I D=-5A--3950

Forward Transconductance G FS V DS=-5V,I D=-4A--12--S Diode Forward Voltage V SD V GS=0V,I S=-1A---0.77-1.7V

Input Capacitance C ISS

V DS=-15V,V GS=0V,

f=1.0MHz --950--

pF

Output Capacitance C OSS--137--Reverse Transfer Capacitance C RSS--118--

Turn–On Delay Time T D(ON)V DS=-15V,R L=2.5R,

V GS=-10V,R GEN=3R ----18

nS

Turn–Off Delay Tim T D(OFF)----70

Notes:

1.DUT is mounted on a1in2FR-4board with2oz.Copper in a still air environment at25°C，the current rating is based on

the DC（<10s）test conditions

2.Repetitive rating,pulse width limited by junction temperature.