tlp521驱动_应用电路_光耦参数

High Isolation V oltage (5.3kV RMS ,7.5kV PK ) High BV CEO ( 55Vmin ) TLP521GB, TLP521-2GB, TLP521-4GB, TLP521, TLP521-2, TLP521-4 TLP521XGB, TLP521-2XGB, TLP521-4XGB TLP521X, TLP521-2X, TLP521-4X

HIGH DENSITY MOUNTING

PHOTOTRANSISTOR

OPTICALLY COUPLED ISOLATORS APPROVALS

● UL recognised, File No. E91231

TLP521

2.54

Dimensions in mm

'X'SPECIFICATIONAPPROVALS ● VDE 0884 in 3 available lead form : -

- STD - G form

1.2

7.0 6.0

1 2

4 3

- SMD approved to CECC 00802

●

BSI approved - Certificate No. 8001

5.08 4.08

4.0 3.0 7.62

DESCRIPTION

0.5

13° Max

The TLP521, TLP521-2, TLP521-4 series of optically coupled isolators consist of infrared light emitting diodes and NPN silicon photo transistors in space efficient dual in line plastic packages.

3.0 TLP521-2

0.5

2.54

3.35

0.26

1 8

2 7 FEATURES ● Options :-

7.0 6.0

3 4

6 5

10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. ● High Current Transfer Ratio ( 50% min) ● ● ● All electrical parameters 100% tested ● Custom electrical selections available

APPLICATIONS ● Computer terminals 1.2

3.0

TLP521-4

10.16 9.16

0.5

4.0 3.0 3.35

0.5

7.62

0.26

1 2

13° Max

16 15

● Industrial systems controllers 3

14 ● Measuring instruments ● Signal transmission between systems of

different potentials and impedances

2.54

7.0 4 13 5 12 6 11

OPTION SM SURFACE MOUNT

OPTION G

7.62

1.2

6.0

7 8

10 9

20.32 19.32

4.0 3.0

7.62

0.6 0.1 1.25 0.75

10.46 9.86

0.26 10.16

0.5 3.35

0.5

0.26

13° Max

7/

ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified)

INPUT DIODE

Forward Current 50mA Reverse Voltage 6V Power Dissipation

70mW

OUTPUT TRANSISTOR

Collector-emitter Voltage BV CEO 55V Emitter-collector Voltage BV ECO 6V Power Dissipation

150mW

POWER DISSIPATION

Total Power Dissipation

200mW

(derate linearly 2.67mW/°C above 25°C)

Note 1 Measured with input leads shorted together and output leads shorted together. Note 2

Special Selections are available on request. Please consult the factory.

7/4/03

DB92546m-AAS/A3

C o l l e c t o r p o w e r d i s s i p a t i o n P C (m W )

C o l l e c t o r c u r r e n t I C (m A )

C o l l e c t o r c u r r e n t I C (m A )

F o r w a r d c u r r e n t I F (m A )

C u r r e n t t r a n s f e r r a t i o C T R (%)

C o l l e c t o r -e m i t t e r s a t u r a t i o n v o l t a g e V C E (S A T )(V )

Collector Power Dissipation vs. Ambient Temperature

Collector Current vs. Low Collector-emitter Voltage

200

150

100

50

25

20

15

10

5

T A = 25°C

50 40 30 20 10 5

I F = 2mA

-30 0 25 50

75 100 125

Ambient temperature T A ( °C )

Forward Current vs. Ambient Temperature

0 0.2 0.4 0.6 0.8 1.0

Collector-emitter voltage V CE ( V )

Collector Current vs. Collector-emitter Voltage

60

50

50

T A = 25°C

50

40 40 30 20

15

30

20

10 30

20

10

10

I F = 5mA

0.28

-30 0 25 50 75 100 125 Ambient temperature T A ( °C ) Collector-emitter Saturation Voltage vs. Ambient Temperature

0 2 4 6 8 10 Collector-emitter voltage V CE ( V )

Current Transfer Ratio vs. Forward Current 320 0.24

0.20

0.16

280 240

200 160 0.12 120 0.08

0.04 80 40

7/4/03

-30 0 25 50 75 100

Ambient temperature T A ( °C )

125102050

Forward current I F (mA)

DB92546m-AAS/A3