英飞凌模块的并联使用

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英飞凌IGBT模块安装说明应用笔记

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由于技术要求，组件可能包含有害物质。若需了解相关物质的类型，请联系距离您最近的英飞凌办事处。如果可以合理地预计英飞凌的某个组件可能会导致生命支持设备或系统失效，或者影响该等设备或系统的安全性或有效性，那么在将该等组件用于生命支持设备或系统之前，必须获得英飞凌的明确书面同意。生命支持设备或系统意指用于植入人体内部，或者支持和/或维持、维系和/或保护人类生命的设备或系统。如果这些设备或系统失效，可以合理地假设其用户或其他人的健康将受到威胁。 AN 2006-05 修订记录：2011 年 1 月 31 日 V2.0 先前版本：2006 年 7 月 1 日 V1.0 在上一版本的基础上作出的主要更改：一般修订；采用 PressFIT 技术安装 PCB 电路板：第二章第 5-11 页全部：第二次发布作者：Martin Knecht（IFAG IMM INP MP）

1.2 静电敏感元件的处理
IGBT 模块是静电敏感元件。静电放电（ESD）可能导致这些模块被过早损坏甚至毁坏。为了防止静电放电造成元件毁坏或过早损坏，所交付的元件均采用了适当的静电防护封装，符合公认的 ESD 法规要求。要拆卸静电防护装置，处理未受保护的模块，必须在符合 ESD 法规要求的工作场所中执行。如需了解更多信息，请参考诸如 IEC 61340-5-1 和 ANSI/ESD S2020 等 ESD 安装准则。
图 2： EconoDUAL™ 3 模块上的 PCB 电路板安装支脚（红圈）
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N 2010-03 2009
应用笔记 AN 2006-05 V2.0，2011年1月
取决于所安装的具体 PCB 电路板的厚度和重量，拧入 PCB 电路板安装支脚内的有效螺纹长度应当至少为 lmin 4 毫米，且最长不超过 lmax 10 毫米。

手把手教你学会模块电源并联均流主从设置法

手把手教你学会模块电源并联均流主从设置法在昨天的技术文章介绍中，我们详细的分析了如何利用输出阻抗法实现模块电源并联均流。

然而，这种方法在实际工作中存在很多缺陷，这就需要工程师合理进行选择。

今天要为大家介绍的是利用主从设置法完成电源模块并联并实现均流的方式，希望能够通过本文的介绍，帮助工程师更好的完成多电源模块并联工作。

所谓的主从设置法，指的是在并联的n个变换器模块中，通过人为的程序制定，将这些电源其中的一个指定为主模块，而其余各模块跟从主模块分配电流，称为从模块。

该方法适用于有电流型控制的并联开关电源系统中，电流型控制是指开关电源模块中有电压控制和电流控制，电流环为内环，电压环为外环。

下图为n个变换器模块并联的主从控制原理图。

图为主从模块设置法均流控制原理图从上图中我们可以很清楚的看到，图中每个电源模块珺为双环控制系统，在这种控制系统中，工程师将模块l设定为主模块并使其按电压控制规律工作，其余的n一1个模块按电流型控制方式工作。

vr为主模块的基准电压，Vf为输出电压反馈信号。

经过电压误差放大器，得到误差电压Ve，它是主模块的电流基准，与Vll（该参数反映主模块电流Il大小）比较后，产生控制电压Vc，控制调制器和驱动器工作。

主模块电流将按电流基准vc调制，即模块电流近似与ve成正比。

在完成并联设置后，各个从模块的电压误差放大器接成跟随器的形式，主模块的电压误差ve输入各跟随器，跟随器输出均为Ve，为从模块的电流基准，因此各个从模块的电流均按同一Vc值调制，与主模块电流基本一致，从而实现模块间的均流。

总结在模块电源的并联均流设计中，采用主从模块设置法能够较好的保障机体实现稳定高效工作，且不会出现电流分配特性差等问题。

但是它也有一些缺点，那就是该均流法要求主从模块间必须有通讯联系，所以整个系统比较复杂。

且如果主模块失效，则整个电源系统不能工作，因此可靠性取决于主模块，只能均流，不适用于构成冗余并联系统。

IGBT模块的并联使用技术指南

Paralleling of modules or paralleling of inverters becomes necessary, if a desired inverter rating or output current can not be achieved with a single IGBT module as switch.From an economic point of view paral-leling of modules is in many cases the solution of choice. On the other hand it is a technical challenging task to ensure proper current sharing between the parallel connected modules.This application note shades light on the technical measures which help to ensure a homogenous current sharing within the parallel connected power modules. Homogenous current sharing is also the key to maintain high ruggedness of the whole converter and it allows an optimal utilisation of the power modules with minimal de-rating.Paralleling of IGBT modules IGBT模块的并联应用ContentsPage1 Introduction 32 Static current sharing 32.1 Influence of the module parameter spread 32.2 External influence on current sharing 43 Dynamic current sharing 43.1 Common Gate-Driver 43.2 Common Gate-Driver with common mode chokes 53.3 Individual Gate-Driver 63.4 Stray Inductance and Clamping 73.5 Phase connection 8 3.6 Influence of the junction Temperature 83.7 Influence of the device parameters 94 General recommendations / Summary 94.1 De-rating 95 References 91 IntroductionIn an ideal case the current capability of IGBT modules scales with the number of modules connected in parallel. Due to a never completely matched impedance of each module connection and due to parameter variations between the different modules a per-fect current sharing is not realistic. In addition unequal cooling of the semiconductor devices can lead to further current imbalance in and between the modules since the semi-conductor on-state and switching characteristics are temperature dependent. This application note deals with the influence parameters for static and dynamic current sharing and shows the impact on current imbalance between the parallel connected modules and con-sequential influence on the junction temperature.2 Static current sharingThe static current sharing is influenced mainly by the difference of the connection resistance and the on-state characteristics of the parallel connected modules.Figure 1 shows the simplified electrical circuit for two parallel connected modules assuming a linear approximation of the on-state characteristics of the modules. The connection resistance for each module is lumped in a simple resistor. The value of this resistor is strongly customer application specific.2.1 Influence of the module parameter spreadFigure 2 shows the IGBT -on state voltage distribution of a produc-tion time of roughly one year for one product. The median V CEsat of the population is at 5.4 V and the standard deviation is 0.065 V .In order to statistically evaluate the current sharing of two parallel connected modules the V CEsat of roughly 4000 measured modules was randomly grouped into a total of 200 pairs.Figure 3 shows the probability plot of the V CEsat difference of the paralleled IGBT modules. The random grouping of the modules out of the population shown in Figure 2, yields in a median V CEsat difference of 65 mV and a maximum difference of 265 mV .More important than the voltage difference, is the resulting current imbalance between the paralleled modules.In order to calculate the current in the modules a linear approxi-mation of V CEsat versus I C was assumed between nominal current (600 A) and 1/3 of the nominal current (see also Figure 1).Eqn. 1As a simplification the threshold on-state voltage (V TO ) at zero amps was set to 2.5 V . This is quite close to the reality since most of the process variations influence more the resistive part of the characteristics and only minor the V TO . Evaluating only the current imbalance due to the module variation, (assuming the worst case of zero connection resistance) both paralleled modules must see the same voltage drop. Running two paralleled modules at twice the nominal rating of a single module will cause a common voltage drop of the average V CEsat of the two modules at its nominal current (in the example 600 A per module). Thus the resulting module current in each module can be calculatedFigure 1: On-state modelFigure 2: Statistics of the IGBT on-state (6500 V / 600 A module)Figure 3: Statistics of VCEsat difference between paralleled modules (6500 V / 600 A module)delta_VCEsatP r o b a b i l i t yVCEsat @ 600A, 125 °CP r o b a b i l i t y+1s-1s +2s-2s +3s-3s m e d i a nEqn. 2Figure 4: Current imbalance (6500 V / 600 A module)based on its on-resistance (r CE ):The current imbalance between the paired modules from Figure 3 is expressed as the maximum collector current minus theaverage current, divided by the average current (in this example 600 A). The probability plot of the current imbalance of two paralleled modules is shown in Figure 4. The median current imbalance is 1.1 % and the maximum observed current imbalance was 4.5 %.The current sharing shown in Figure 4 is what can be expected if modules from a large production period (one year) are randomly grouped in to pairs, excluding the influence of possibleinhomogenous cooling and connection resistance. A furtherimprovement in static current sharing can be achieved if the mod-ules for parallel connection are specifically selected based on its on-state voltage (V CEsat / V F ) or if modules from the same produc-tion lot (narrower parameter spread) are used. Figure 5 shows the current imbalance as a function of the on-state voltage difference.2.2 External influence on current sharingThe influence of the connection resistance can be calculated straight forward based on the model shown in Figure 1.Especially for semiconductors with low on-state voltage and thusFigure 5: Current imbalance vs. VCEsat (6500 V / 600 A module)(Ic,max-Ic,av)/Ic,avP r o b a b i l i ty0.050.10.150.20.250.3delta_VCEsat(I c ,m a x -I c ,a v )/I c ,a vlow on-resistance the connection resistance can have a signifi -cant influence on current sharing which is at least in the same range as the module characteristic influence.Beside the connection resistance also the cooling has aninfluence on current sharing. Since the semiconductor on-state characteristics are more or less temperature dependent.Figure 6 shows the on-state characteristics for 25 and 125 °C of a 6500 V 600 A IGBT. Obviously if one module would be oper-ated at 25 °C and the other module at 125 °C, the cooler module would take a much larger share of the total current. Though thanks to the positive temperature coefficient the currentsharing in reality would improve since the higher current in the cold module would cause a higher temperature and vice versa for the hotter module. So in short time the current sharing would stabilise. Nevertheless homogenous cooling with the same in-let temperature of the cooling medium for both module heat-sinks is crucial. Especially for the diode operation mode, since the diode on-state characteristic does not offer necessarily a positive tem-perature coefficient over the full current and temperature st but not least also the gate voltage supplied by the gate-unit has an influence on the on-state char-acteristics of the IGBT. It is thus important that the gate-voltages are narrowly matched for all parallel connected IGBTs or that the same gate-voltage supply is used.3 Dynamic current sharingDynamic current sharing depends largely on the external power circuit design. Especially during the turn-on process different emitter impedance values to the common point of the commuta-tion loop have a strong influence since the gate-voltages of the paralleled IGBTs are directly affected if a common gate-driver for all modules is used. If individual gate drivers are used, proper matching and narrow parameter spread between the drivers is crucial.3.1 Common Gate-DriverFigure 7 shows a simplified schematic of a parallel connection of two IGBT modules with a common Gate-Unit and with slightly different connection inductance values which resemble a not ideal but realistic difference to the virtual common connection point for this consideration. Through this configuration a loop between theFigure 6: IGBT on-state characteristics (6500 V / 600 A module)Figure 7: Simplified schematic of a parallel connectionunavoidable.Especially during turn-on this has a significant influence on the dynamic current sharing. Assuming an identical initial turn-on di C/ dt we get a proportional voltage drop across the stray inductance between the auxiliary emitter potential and the common point (marked as earth symbol in Figure 7):Eqn. 3 This unequal potential of the two auxiliary emitters forces a current through the auxiliary emitter connection to the gate-unit. Consequently we get a voltage drop across the impedance of this connection (Z E) which changes the effective gate voltage as shown in Figure 7. In the example the gate voltage for the left IGBT with lower emitter inductance will be lifted and the gate voltages for the right IGBT will be damped. Thus the left IGBT takes most of the initial current and thus also produces signifi-cantly higher turn-on losses. Figure 8 shows a simulated turn-on behaviour with two 3300 V / 1200 A IGBTs and unequal connec-tion as shown in Figure 7. Obviously the current mismatch is quite significant which causes roughly 20 .. 25 % higher turn-on losses for the left switch compared to the expected losses with ideal current sharing.Needless to say that this severe current mismatch is far from being ideal, thus the current and losses mis-match needs to be translated into a proper de-rating if the design of the power circuit can not be improved.Interestingly the effect on turn-off is nearly invisible since the gate-voltage has practically no influence on the turn-off current characteristics and the theoretical influence on the collector voltage is irrelevant since the voltages are forced to be identical by definition. Figure 9 shows a turn-off event. The influence of the unequal L sE on V GE is clearly visible, but it has negligible influence on the collector current and thus the overall characteristics.3.2 Common Gate-Driver with common mode chokesA patented method from ABB to rectify unequal connection impedance values is the use of so called common mode chokes. The common mode chokes nearly don’t influence the gate-emit-Figure 8: IGBT turn-on with unequal emitter inductanceFigure 9: IGBT turn-off with unequal emitter inductanceFigure 10: Parallel connection with common mode chokesFigure 11a: Turn-on with common mode chokesIn Figure 10 a simplified schematics of a parallel connection with common mode chokes in the gate is shown. Since the common mode chokes decouple the gate-unit from the IGBT emitter it is important to tap one emitter with a resistance (RE ~ 100 m ) to the gate-unit in order to facilitate a proper V CEsat measurement for the desaturation detection.ns delay between the gates from IGBT1 to IGBT2. As a result we get a significant dynamic current mismatch in terms of amplitude and delay. Thus the turn-on and the turn-off losses deviate up to 15 .. 20 % from the expected switching losses with ideal current sharing. In addition the turn-off current is 40 % above the average turn-off current. It is a must to consider this in the SOA derating of the paralleled IGBT modules.Figure 13: Turn-off with 100 ns timing mismatchFigure 14: Turn-on with 0.5 V VGE mismatchIn Figure 14 and Figure 15 the turn-on respective the turn-off switching with 0.5 V difference in V GE are shown. Even if V GE seems to have less influence in dynamic current sharing it needs to be considered, especially for the turn-on losses (E on ), where the mis-match of this example is still 5 .. 10 %.3.4 Stray Inductance and ClampingFor reliable device operation it is crucial, that the peak voltage even during switching always stays below the maximum rated device voltage. Especially if high current modules are parallel con-nected, this can become a challenge for the power electronics age and the switching speed (di/dt) and the stray inductane (L ):Eqn. 5Eqn. 6of the paralleled modules at a similar -. Especially for high-current modules sor diodes between gate- and emitter and as well as a Schottky diode to the +15 V supply) and gate-resistor. Advanced active clamping with feedback to the final amplifier stage of the gate-unit (indicated with dashed lines) is strongly recommended in order to avoid overload to the suppressor diodes.Figure 16: Active ClampFigure 17: De-coupling with phase inductorsFigure 18: Phase current harmonising with chokesFigure 19: SOA turn-off IGBT1 @ 105 °C / IGBT2 @ 125 °C3.5 Phase connectionAdditional current balancing between paralleled modules can be achieved with the introduction of additional impedance in the phase connection, which decouples the single modules (Figure 17).This solution though has the disadvantage that the converter needs to supply the additional reactive power consumed by the inductors.An even better alternative to the single phase inductors is tomagnetic couple the phase currents with chokes that can be built with ferrite cores (Figure 18). In this case the inductance has only an effect on the current difference between the paralleled phase-legs.3.6 Influence of the junction TemperatureThe junction temperature has a significant influence on theswitching characteristics and thus the dynamic current sharing. Especially during turn-off it is crucial to ensure, that all modules are operated within its safe operating area. In order to investigate the dynamic current sharing, special measurements carried out on 3300 V / 1200 A SPT modules with by purpose varied junction temperatures have been carried out [2]. The test was done with a total stray inductance of 100 nH (200 nH/module) and with the use of common mode chokes (Figure 10) in order to minimize the influence of the power circuit:Ic1Ic2IctotVc VGEEoff2Eoff1123456kA0.51.01.52.02.53.03.5kV -15-10-5051015V123456789J 3456789µsFigure 20: SOA turn-off IGBT1 @ 25 °C / IGBT2 @ 125 °CFigure 19 and Figure 20 show the current sharing during turn-offat extreme switching conditions. As expected the cold module carries more current before the turn-off event is initiated (static current sharing). Though the hot module dissipates more turn-off energy since the current during turn-off commutates to the hot module (more charge). As a matter of fact the hot module will be heated even more so from the turn-off point of view no stabilisation effect is to be expected.Thus it is crucial to design homogenous heatsinks that cool both modules identical, even if this test demonstrates the excellent robustness of the SPT technology.3.7 Influence of the device parametersIn principle the main influence parameters that cause currentimbalance between parallel connected modules are the switching times, respective the IGBT turn-on and turn-off delay times and the transfer characteristics (pinch-off voltage). In practice the dis-tribution of the switching delay times are narrow and in the range of the measurement accuracy of production test equipment. The main contribution for current imbalance can be attributed to the difference in pinch-off voltage (V p ) between the paralleled IGBTs. Different pinch-off voltages on the other hand are also the main contributor to the delay time variations between different IGBTs. Since the pinch-off voltage is a static parameter that can be measured accurate it is usually the parameter which is used if a selection of modules for paralleling is desired. The impact of different pinch-off voltages of paralleled devices can be simulated by varying the gate-voltage (V GEon ) of the gate-unit since this has practically the same effect as different V p . Figure 14 and Figure 15 in the chapter 3.3 thus show expected effect of a 0.5 V mismatch in V p (a 0.5 V higher V GE is similar than a 0.5 V lower V p ). Again the effect on turn-on is much more pronounced than in case of turn-off.At last of course the turn-off respectively diode recovery losses of the individual switches still follow the classic technology curve (E off vs. V CEsat – E rec vs . V F ). As E off and E rec are indirect proportional to the conduction losses, the switching losses mismatch is compen-sating the static losses mismatch to some extend. Still a narrow parameter spread in V CEsat and V F helps to improve both, static and dynamic current sharing.Ic1Ic2Ictot Vc VGEEoff2Eoff1123456kA0.51.01.52.02.53.03.5kV -15-10-5051015V2468101214J3456789µs4 General recommendations / SummaryIn order to achieve an equal current sharing between paralleled modules homogenous cooling is crucial in order to maintain a close matching of the junction temperatures of the individual modules and to avoid possible thermal runaway. Additionally a very symmetric construction of the power circuit with identical connection impedance values for each module is an absolute must.In Table 1 typical losses and current mismatches are shown for a parallel connection of two IGBT modules. Obviously the module parameter spread has much less impact than the influence of asymmetrical connection impedance or gate-driver variations.In addition the module parameter spread can be reduced by asuitable device selection with the parameters V CEsat /V F and V p . It though makes sense to verify if the selection of modules for parallel connection makes sense from an economic point of view. The benefit of less de-rating due to device selection should be compared to the costs involved for the logistics of the device selection and possible write-offs for unmatchable components.4.1 De-ratingThe de-rating of modules in parallel connection should be done based on two kinds of considerations:Safe-Operating-AreaThe modules must always be operated within the safe operating area (SOA). The main topic to look at, are the switching currents. Table 1 for instance shows a current imbalance of up to 50 % in the turn-off current in case of switching delays caused by the gate-unit. In such a case the maximum turn-off current must be reduced by 50 % in order to stay inside the SOA.Thermal de-ratingNot homogenous current sharing causes higher losses in the module that takes more current. Consequently this needs to be considered in case of parallel operation. For the on-state losses the current mismatch can be expressed by multiplying the on-state losses with the factor for the current imbalance (e.g. D = 1.05 for 5 % current mismatch).Eqn. 7The same is true for the switching losses. If the losses mismatch is known it has to be considered for the total switching lossesA p p l i c a t i o n n o t e 5S Y A 2098-00 25.08.2013NoteWe reserve the right to make technical changes or to modify the contents of this document without prior notice.We reserve all rights in this document and the information contained therein. Any reproduction or utilisation of this document or parts thereof for commercial purposes without our prior written consent is forbidden.Any liability for use of our products contrary to the instructions in this document is excluded.Eqn. 8Figure 21 shows the output current of two paralleled and fully utilised 6500 V 600 A modules operated at its maximum junc-tion temperatures. The solid line represents the achievable output current without any de-rating in inverter operation. The dashed lines show the reduced output current due to de-rating caused by module parameter variations. No de-rating due to the circuit parameters is considered, thus a perfect symmetrical power circuit is assumed. For the selected modules a delta V CEsat /V F of 100 mV (corresponding to 2 % current static current imbalance) and dynamic switching loss mismatch of 2.5 % (E off + E on ) are as-sumed. For the randomly picked unselected modules a static current imbalance of 5 % and a dynamic losses mismatch of5 % are assumed. This yields in a switching frequency dependent output current de-rating of 1.5 .. 2.5 % for the selected module and 3.5 .. 5 % for the unselected module. The switchingfrequency dependency comes from the fact that the dynamic losses mismatch gets dominant at higher switching frequencies. This has to be especially considered for dynamic current mis-match due to unsymmetrical power circuit connection or timingvariations of the gate-drivers, which is not included in Figure 21.Figure 21: Output current de-ratingVersion ChangeAuthors00 Initial release Raffael Schnell5 References[1] R. Schnell, U. Schlapbach, K. Haas, G. Debled,«Parallel Operation of LoPak Modules», Proc. PCIM’03, Nuremberg[2] U. Schlapbach, M. Rahimo, A. Baschnagel, A. Kop-ta, E. Carroll, «Switching-Self-Clamping-Mode «SSCM» for Over-voltage Protection in High Voltage IGBT Applica-tions»,Proc. PCIM’05, Nuremberg6 Revision history。

英飞凌igbt模块安装应用笔记

英飞凌igbt模块安装应用笔记英飞凌igbt模块安装应用笔记作者：微叶科技时间：2015-12-01 15:581 英飞凌igbt模块安装应用概述1.1 一般应用信息通过在生产过程中执行适当的可靠性测试和100%最终测试，确保符合英飞凌IGBT模块要求。

IGBT模块产品数据表和应用笔记中给出的最大值，均为不得超出的规定限值，哪怕只是短时超限也不允许，因为这会导致元件损坏。

本应用笔记未能涵盖所有不同应用和应用条件。

因此，应用笔记不能替代用户执行的细致深入的技术评估和检查。

因此，不论在任何情况下，应用笔记均不应构成任何供应商同意的保证的一部分，除非供应协议以书面方式另行规定。

1.2 静电敏感元件的处理IGBT模块是静电敏感元件。

静电放电（ESD）可能导致这些模块被过早损坏甚至毁坏。

为了防止静电放电造成元件毁坏或过早损坏，所交付的元件均采用了适当的静电防护封装，符合公认的ESD法规要求。

要拆卸静电防护装置，处理未受保护的模块，必须在符合ESD法规要求的工作场所中执行。

如需了解更多信息，请参考诸如IEC61340-5-1和ANSI/ESDS2020等ESD安装准则。

图1：静电放电标志2 将PCB电路板安装到模块上的说明2.1将PCB电路板安装到可焊模块上的说明2.1.1额外加固印刷电路板利用外接驱动板，可实现尽可能短的栅极-集电极连接，以防止磁耦合，并最大限度地降低栅电路的寄生电感。

完成焊接之后，建议采用机械方法，消除模块与印刷电路板之间的应力。

可以利用自攻螺丝或类似的紧固方法，通过模块上的4个PCB电路板安装支脚（请参见图2），将PCB电路板安装到模块上，以消除应力。

如需进一步的技术支持，可应要求提供评估驱动板和评估模块适配器板（模块适配器用于连接栅极电阻和箝位二极管）。

关于EconoDUAL?评估驱动板的更多信息，请参考应用笔记AN2006-04《面向EconoDUAL?IGBT模块的评估驱动板》。

正确理解IGBT模块规格书参数

正确理解IGBT模块规格书参数本文将阐述IGBT模块手册所规定的主要技术指标，包括电流参数、电压参数、开关参数、二极管参数及热学参数，使大家正确的理解IGBT模块规格书，为器件选型提供依据。

本文所用参数数据以英飞凌IGBT模块FF450R17ME3 为例。

一、电流参数1. 额定电流（IC nom）大功率IGBT模块一般是由内部并联若干IGBT芯片构成，FF450R17ME3内部是3个150A 芯片并联，所以标称值为450A额定电流可以用以下公式估算：Tjmax–TC= VCEsat·IC nom·RthJCVCEsat 是IC nom的函数，见规格书后图1，采用线性近似VCEsat=(IC nom+287)/310 Tjmax=150℃,TC=80℃,RthJC =0.055K/W计算得：IC nom=500A2. 脉冲电流（Icrm 和Irbsoa）Icrm是可重复的开通脉冲电流（1ms仅是测试条件，实际值取决于散热情况）Irbsoa 是IGBT可以关断的最大电流所有模块的的Icrm和Irbsoa都是2倍额定电流值3. 短路电流ISC短路条件:t<10μs,Vge<15V,Rg>Rgnom(规格书中的值)，Tj<125℃短路坚固性ØIGBT2为平面栅IGBT:5-8倍ICØIGBT3/IGBT4为沟槽栅IGBT:4倍IC二、电压参数1. 集电极-发射极阻断电压Vces测量Vces时，G/E两极必须短路Vces为IGBT模块所能承受的最大电压，在任何时候CE间电压都不能超过这一数值，否则将造成去器件击穿损坏Vces和短路电流ISC一起构成了IGBT模块的安全工作区：RBSOA图由于模块内部寄生电感△V=di/dt*Lin 在动态情况下，模块耐压和芯片耐压有所区别2. 饱和压降VCEsatIFX IGBT的VCEsat随温度的升高而增大，称为VCEsat具有正温度系数，利于芯片之间实现均流VCEsat 是IC的正向函数，随增大而增大ICVCEsat的变化VCEsat随IC的增大而增大VCEsat随VG的减小而增大VCEsat 值可用来计算导通损耗对于SPWM 控制, 导通损耗是:三、开关参数1. 内部门极电阻RGint为了实现模块内部芯片的均流，模块内部集成了内部门极电阻。

英飞凌 FP50R12N2T7P EconoPIM 2 模块数据表

EconoPIM ™2 模块采用第七代沟槽栅/场终止IGBT7和第七代发射极控制二极管带有温度检测NTC 和预涂导热介质特性•电气特性-V CES = 1200 V-I C nom = 50 A / I CRM = 100 A -沟槽栅IGBT7-低 V CEsat-过载操作达175°C•机械特性-高功率循环和温度循环能力-集成NTC 温度传感器-铜基板-低热阻的三氧化二铝 Al 2O 3 衬底-预涂导热介质-焊接技术可选应用•辅助逆变器•电机传动•伺服驱动器产品认证•根据 IEC 60747、60749 和 60068标准的相关测试，符合工业应用的要求。

描述FP50R12N2T7PEconoPIM ™2 模块内容描述 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1特性 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1可选应用 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1产品认证 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1内容 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 1封装 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 2IGBT, 逆变器 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 3二极管,逆变器 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 4二极管,整流器 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 5IGBT, 斩波器 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 6Diode-斩波器 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 7负温度系数热敏电阻 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 8特征参数图表 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 9电路拓扑图 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 10封装尺寸 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 11模块标签代码 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17修订历史 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18免责声明 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .191封装表 1绝缘参数特征参数代号标注或测试条件数值单位绝缘测试电压V ISOL RMS, f = 50 Hz, t = 1 min 2.5kV 模块基板材料Cu内部绝缘基本绝缘 (class 1, IEC 61140)Al2O3爬电距离d Creep端子至散热器10.0mm 电气间隙d Clear端子至散热器7.5mm 相对电痕指数CTI>200相对温度指数 (电)RTI封装140°C 表 2特征值特征参数代号标注或测试条件数值单位最小值典型值最大值杂散电感,模块L sCE35nH 模块引线电阻,端子-芯片R AA'+CC'T H=25°C, 每个开关 5.5mΩ模块引线电阻,端子-芯片R CC'+EE'T H=25°C, 每个开关 4.8mΩ储存温度T stg-40125°C 最高基板工作温度T BPmax150°CM5, 螺丝36Nm 模块安装的安装扭距M根据相应的应用手册进行安装重量G180g注:The current under continuous operation is limited to 50 A rms per connector pin.Storage and shipment of modules with TIM => see AN2012-072IGBT, 逆变器表 3最大标定值特征参数代号标注或测试条件数值单位集电极－发射极电压V CES T vj = 25 °C1200V 连续集电极直流电流I CDC T vj max = 175 °C T H = 90 °C50A 集电极重复峰值电流I CRM t P = 1 ms100A 栅极－发射极峰值电压V GES±20V表 4特征值特征参数代号标注或测试条件数值单位最小值典型值最大值集电极－发射极饱和电压V CE sat I C = 50 A, V GE = 15 V T vj = 25 °C 1.50 1.80VT vj = 125 °C 1.64T vj = 175 °C 1.72栅极阈值电压V GEth I C = 2 mA, V CE = V GE, T vj = 25 °C 5.15 5.80 6.45V 栅极电荷Q G V GE = ±15 V, V CE = 600 V0.92µC 内部栅极电阻R Gint T vj = 25 °C0Ω输入电容C ies f = 100 kHz, T vj = 25 °C, V CE = 25 V, V GE = 0 V11.1nF 反向传输电容C res f = 100 kHz, T vj = 25 °C, V CE = 25 V, V GE = 0 V0.039nF 集电极-发射极截止电流I CES V CE = 1200 V, V GE = 0 V T vj = 25 °C0.01mA 栅极-发射极漏电流I GES V CE = 0 V, V GE = 20 V, T vj = 25 °C100nA开通延迟时间(感性负载)t don I C = 50 A, V CE = 600 V,V GE = ±15 V, R Gon = 7.5 ΩT vj = 25 °C0.059µs T vj = 125 °C0.061T vj = 175 °C0.062上升时间(感性负载)t r I C = 50 A, V CE = 600 V,V GE = ±15 V, R Gon = 7.5 ΩT vj = 25 °C0.043µs T vj = 125 °C0.047T vj = 175 °C0.049关断延迟时间(感性负载)t doff I C = 50 A, V CE = 600 V,V GE = ±15 V, R Goff = 7.5 ΩT vj = 25 °C0.290µs T vj = 125 °C0.380T vj = 175 °C0.420下降时间(感性负载)t f I C = 50 A, V CE = 600 V,V GE = ±15 V, R Goff = 7.5 ΩT vj = 25 °C0.110µs T vj = 125 °C0.200T vj = 175 °C0.270开通损耗能量 (每脉冲)E on I C = 50 A, V CE = 600 V,Lσ = 35 nH, V GE = ±15 V,R Gon = 7.5 Ω, di/dt = 900A/µs (T vj = 175 °C)T vj = 25 °C 5.07mJ T vj = 125 °C 6.76T vj = 175 °C7.72关断损耗能量 (每脉冲）E off I C = 50 A, V CE = 600 V,Lσ = 35 nH, V GE = ±15 V,R Goff = 7.5 Ω, dv/dt =2900 V/µs (T vj = 175 °C)T vj = 25 °C 3.37mJ T vj = 125 °C 5.31T vj = 175 °C 6.58(待续)表 4(续) 特征值特征参数代号标注或测试条件数值单位最小值典型值最大值短路数据I SC V GE≤ 15 V, V CC = 800 V,V CEmax=V CES-L sCE*di/dt t P≤ 8 µs,T vj=150 °C190At P≤ 7 µs,T vj=175 °C180结－散热器热阻R thJH每个 IGBT, Valid with IFX pre-appliedThermal Interface Material0.777K/W 允许开关的温度范围T vj op-40175°C注:T vj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14.3二极管,逆变器表 5最大标定值特征参数代号标注或测试条件数值单位反向重复峰值电压V RRM T vj = 25 °C1200V 连续正向直流电流I F50A 正向重复峰值电流I FRM t P = 1 ms100A I2t-值I2t V R = 0 V, t P = 10 ms T vj = 125 °C465A²sT vj = 175 °C420表 6特征值特征参数代号标注或测试条件数值单位最小值典型值最大值正向电压V F I F = 50 A, V GE = 0 V T vj = 25 °C 1.72 2.10VT vj = 125 °C 1.59T vj = 175 °C 1.52反向恢复峰值电流I RM I F = 35 A, V R = 600 V,V GE = -15 V, -di F/dt = 900A/µs (T vj = 175 °C)T vj = 25 °C31A T vj = 125 °C39T vj = 175 °C45恢复电荷Q r I F = 50 A, V R = 600 V,V GE = -15 V, -di F/dt = 900A/µs (T vj = 175 °C)T vj = 25 °C 3.96µC T vj = 125 °C7.37T vj = 175 °C9.89(待续)表 6(续) 特征值特征参数代号标注或测试条件数值单位最小值典型值最大值反向恢复损耗（每脉冲）E rec I F = 50 A, V R = 600 V,V GE = -15 V, -di F/dt = 900A/µs (T vj = 175 °C)T vj = 25 °C 1.31mJ T vj = 125 °C 2.52T vj = 175 °C 3.46结－散热器热阻R thJH每个二极管, Valid with IFX pre-appliedThermal Interface Material1.13K/W 允许开关的温度范围T vj op-40175°C注:T vj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14.4二极管,整流器表 7最大标定值特征参数代号标注或测试条件数值单位反向重复峰值电压V RRM T vj = 25 °C1600V 最大正向均方根电流(每芯片)I FRMSM T H = 60 °C70A最大整流器输出均方根电流I RMSM T H = 60 °C100A 正向浪涌电流I FSM t P = 10 ms T vj = 25 °C560AT vj = 150 °C435I2t-值I2t t P = 10 ms T vj = 25 °C1570A²sT vj = 150 °C945表 8特征值特征参数代号标注或测试条件数值单位最小值典型值最大值正向电压V F I F = 50 A T vj = 150 °C 1.05V 反向电流I r T vj = 150 °C, V R = 1600 V1mA 结－散热器热阻R thJH每个二极管, Valid with IFX pre-appliedThermal Interface Material1.10K/W 允许开关的温度范围T vj, op-40150°C5IGBT, 斩波器表 9最大标定值特征参数代号标注或测试条件数值单位集电极－发射极电压V CES T vj = 25 °C1200V 连续集电极直流电流I CDC T vj max = 175 °C T H = 110 °C25A 集电极重复峰值电流I CRM t P = 1 ms50A 栅极－发射极峰值电压V GES±20V表 10特征值特征参数代号标注或测试条件数值单位最小值典型值最大值集电极－发射极饱和电压V CE sat I C = 25 A, V GE = 15 V T vj = 25 °C 1.60 1.85VT vj = 125 °C 1.74T vj = 175 °C 1.82栅极阈值电压V GEth I C = 0.525 mA, V CE = V GE, T vj = 25 °C 5.15 5.80 6.45V 栅极电荷Q G V GE = ±15 V, V CE = 600 V0.395µC 内部栅极电阻R Gint T vj = 25 °C0Ω输入电容C ies f = 100 kHz, T vj = 25 °C, V CE = 25 V, V GE = 0 V 4.77nF 反向传输电容C res f = 100 kHz, T vj = 25 °C, V CE = 25 V, V GE = 0 V0.017nF 集电极-发射极截止电流I CES V CE = 1200 V, V GE = 0 V T vj = 25 °C0.004mA 栅极-发射极漏电流I GES V CE = 0 V, V GE = 20 V, T vj = 25 °C100nA开通延迟时间(感性负载)t don I C = 25 A, V CE = 600 V,V GE = ±15 V, R Gon = 9.1 ΩT vj = 25 °C0.041µs T vj = 125 °C0.043T vj = 175 °C0.044上升时间(感性负载)t r I C = 25 A, V CE = 600 V,V GE = ±15 V, R Gon = 9.1 ΩT vj = 25 °C0.025µs T vj = 125 °C0.028T vj = 175 °C0.030关断延迟时间(感性负载)t doff I C = 25 A, V CE = 600 V,V GE = ±15 V, R Goff = 9.1 ΩT vj = 25 °C0.230µs T vj = 125 °C0.320T vj = 175 °C0.350下降时间(感性负载)t f I C = 25 A, V CE = 600 V,V GE = ±15 V, R Goff = 9.1 ΩT vj = 25 °C0.140µs T vj = 125 °C0.220T vj = 175 °C0.280(待续)表 10(续) 特征值特征参数代号标注或测试条件数值单位最小值典型值最大值开通损耗能量 (每脉冲)E on I C = 25 A, V CE = 600 V,Lσ = 35 nH, V GE = ±15 V,R Gon = 9.1 Ω, di/dt = 810A/µs (T vj = 175 °C)T vj = 25 °C 1.47mJ T vj = 125 °C 2.05T vj = 175 °C 2.39关断损耗能量 (每脉冲）E off I C = 25 A, V CE = 600 V,Lσ = 35 nH, V GE = ±15 V,R Goff = 9.1 Ω, dv/dt =3120 V/µs (T vj = 175 °C)T vj = 25 °C 1.65mJ T vj = 125 °C 2.58T vj = 175 °C 3.13短路数据I SC V GE≤ 15 V, V CC = 800 V,V CEmax=V CES-L sCE*di/dt t P≤ 8 µs,T vj=150 °C90At P≤ 7 µs,T vj=175 °C85结－散热器热阻R thJH每个 IGBT, Valid with IFX pre-appliedThermal Interface Material1.19K/W 允许开关的温度范围T vj op-40175°C注:T vj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14.6Diode-斩波器表 11最大标定值特征参数代号标注或测试条件数值单位反向重复峰值电压V RRM T vj = 25 °C1200V 连续正向直流电流I F25A 正向重复峰值电流I FRM t P = 1 ms50A I2t-值I2t V R = 0 V, t P = 10 ms T vj = 125 °C125A²sT vj = 175 °C95表 12特征值特征参数代号标注或测试条件数值单位最小值典型值最大值正向电压V F I F = 25 A, V GE = 0 V T vj = 25 °C 1.83 2.30VT vj = 125 °C 1.70T vj = 175 °C 1.63(待续)表 12(续) 特征值特征参数代号标注或测试条件数值单位最小值典型值最大值反向恢复峰值电流I RM I F = 25 A, V R = 600 V,V GE = -15 V, -di F/dt = 810A/µs (T vj = 175 °C)T vj = 25 °C21.7A T vj = 125 °C26.7T vj = 175 °C29.8恢复电荷Q r I F = 25 A, V R = 600 V,V GE = -15 V, -di F/dt = 810A/µs (T vj = 175 °C)T vj = 25 °C 1.69µC T vj = 125 °C 3.29T vj = 175 °C 4.29反向恢复损耗（每脉冲）E rec I F = 25 A, V R = 600 V,V GE = -15 V, -di F/dt = 810A/µs (T vj = 175 °C)T vj = 25 °C0.63mJ T vj = 125 °C 1.28T vj = 175 °C 1.69结－散热器热阻R thJH每个二极管, Valid with IFX pre-appliedThermal Interface Material1.63K/W 允许开关的温度范围T vj op-40175°C注:T vj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14.7负温度系数热敏电阻表 13特征值特征参数代号标注或测试条件数值单位最小值典型值最大值额定电阻值R25T NTC = 25 °C5kΩR100偏差ΔR/R T NTC = 100 °C, R100 = 493 Ω-55%耗散功率P25T NTC = 25 °C20mW B-值B25/50R2 = R25 exp[B25/50(1/T2-1/(298,15 K))]3375K B-值B25/80R2 = R25 exp[B25/80(1/T2-1/(298,15 K))]3411K B-值B25/100R2 = R25 exp[B25/100(1/T2-1/(298,15 K))]3433K 注:根据应用手册标定7 负温度系数热敏电阻9电路拓扑图图 110封装尺寸图 211模块标签代码图 3修订历史修订历史修订版本发布日期变更说明1.002022-02-01Initial version商标所有参照产品或服务名称和商标均为其各自所有者的财产。

2AB0635V65-Q 两并联 IGBT 驱动器使用手册说明书

• 双通道半桥驱动器（可支持单管/并联使用）• 功率器件最高电压6500V • 适配XHP 封装的 infineon 模块• 完整的隔离DC/DC 电源• 绝缘耐压最高可达12000Vac • 光纤逻辑信号输入/输出处理• 集成原边/副边欠压保护• 集成VCE 短路保护•集成软关断特征描述典型应用机械尺寸机械尺寸图：参见第12-13页连接图2AB0635V65-Q驱动器，是基于CPLD 数字芯片，搭配我司自主研发的QD2022A 驱动芯片，设计而成的双通道、高绝缘耐压、多并联驱动器，开关频率最高可达2kHz，专门为要求双通道上/下半桥、高电压等级（6500V 及以下）、多并联的应用领域而设计。

2AB0635V65-Q 驱动器，适用于 infineon 的6500V /225A 的XHP 封装IGBT 模块FF225R65T3E3。

即插即用的功能使驱动器（门极板）可以直接使用螺丝固定在IGBT 模块上使用，不需要转接处理。

注：2AB0635V65-Q 为驱动底座板，需搭配门极板：2MA35A-XHP65，以及连接线：F3911C-10S3BB26000X 来驱动IGBT 模块；连接线长度可根据客户需求定制。

• 大功率变流器该图片仅供参考，请以实物为准。

型号定义2AB0635V65-Q DriverXHP IGBTXHP IGBT原理框图副边电压接口-P5端子定义（驱动底座板：2AB0635V65-Q）管脚符号说明管脚符号说明A1VISO1上桥正电源B1VE1上桥电源地A2VISO1上桥正电源B2VE1上桥电源地A3COM1上桥负电源B3COM1上桥负电源A45V1上桥5V 电源B4COM1上桥负电源A5SO1上桥故障信号B5G1上桥PWM 信号副边电压接口-P4端子定义（驱动底座板：2AB0635V65-Q）管脚符号说明管脚符号说明A1VISO2下桥正电源B1VE2下桥电源地A2VISO2下桥正电源B2VE2下桥电源地A3COM2下桥负电源B3COM2下桥负电源A45V2下桥5V 电源B4COM2下桥负电源A5SO2下桥故障信号B5G2下桥PWM 信号注：驱动底座板2AB0635V65-Q 上，P5/P4端子型号：3910-P010-082ZS3WR1，品牌：WCON。

赛米控、英飞凌三电平方案使用说明书

西门康、英飞凌三电平驱动方案2AB30A17K‐3L‐I/S是基于青铜剑自主开发的2QD30A17K‐I驱动核的驱动底座，为英飞凌和西门康三电平IGBT而设计。

2AB30A17K‐3L‐I/S可以驱动西门康SKiM601TMLI12E4B 和英飞凌F3L400R12PT4_B26三电平IGBT模块。

外置两组驱动接口使得它可以支持2单元SKiM601TMLI12E4B和F3L400R12PT4_B26的并联。

图 1 2AB30A17K‐3L实物图目录驱动方案概述 (3)基本电气特性（驱动核2QD30A17K‐I） (4)底座板和门极板尺寸图 (5)底座板和门极板引脚接口定义 (8)2AB30A17K‐3L 原边牛角引脚定义 (8)2AB30A17K‐3L次边接口定义 (8)MA20A12K‐3L‐S接口定义 (9)MA20A12K‐3L‐I接口定义 (9)底座板门极板电路原理图 (10)2AB30A17K‐3L 电路原理图 (10)MA20A12K‐3L‐S电路原理图 (13)MA20A12K‐3L‐I电路原理图 (15)2AB30A17K‐3L‐I/S牛角接口电路描述 (17)概述 (17)VCC端口 (17)VDC端口 (17)MOD端口（模式选择端） (17)直接模式 (17)半桥模式 (18)INA、INB（PWM信号输入） (18)SO1、SO2（故障输出） (18)底座板与门极板连接描述 (19)概述 (19)2AB30A17K‐3L与MA20A12K‐3L‐S连接示意图 (19)2AB30A17K‐3L与MA20A12K‐3L‐I连接示意图 (19)联系我们 (20)驱动方案概述2AB30A17K‐3L‐I/S采用了青铜剑公司自主开发的驱动核（2QD30A17K‐I）+适配底座（2AB30A17K‐3L）+SKiM601TMLI12E4B或F3L400R12PT4_B26 IGBT门极适配板（MA20A12K‐3L‐S或MA20A12K‐3L‐I）设计而成，是一款使用方便、成本低的IGBT驱动方案。

IGBT并联使用介绍-26页

Page 10
动态均流 > 传输特性差异所引起问题
! 不同传输特性会产生的影响:
-> 不平衡的动态均流; -> 不同开关损耗, 尤其关断;
! 米勒平台阶段, 保持相同门极电压会产生的影响:
-> 传输特性快的IGBT将引起较高电流; -> 较高开关损耗;
30-Dec-08
Copyright © Infineon Technologies 2006. All rights reserved.
IGBT并联应用
- Shanghai Disti&Sales Training, 2008-12
英飞凌科技（中国）应用工程师赵振波
内容
! 影响并联均流主要因素 ! 静态均流 ! 动态均流 ! 均衡措施
30-Dec-08
Copyright © Infineon Technologies 2006. All rights reserved.
30-Dec-08
Copyright © Infineon Technologies 2006. All rights reserved.
Page 6
静态均流 >饱和电压 VCEsat温度特性
VCEsat vs. Ic ( 非贯穿型芯片）
VCEsat vs. Ic （沟槽栅场终止型芯片）
注释： ! 正温度系数特性的VCEsaopyright © Infineon Technologies 2006. All rights reserved.
Page 8
静态均流 > 换流回路等值电阻 > 测试波形
不同并联点
同一并联点
注释: 静态均流可能在很大程度上会被换流回路等值电阻的差异性所影响。

英飞凌IGBT模块规格的正确理解_20100727

开关参数
开关参数(Eon, Eoff)
•Eon: 10%IC to 2%VCE
•Eoff: 10%VCE to 2%IC
英飞凌按照“10%-2%”积分限计算开关损耗，而有些其他厂商按照“10%-10%”计算，后者结果比前者会小 10 – 25%
开关参数
Eon, Eoff 受IC, VCE, 驱动能力(VGE, IG, RG), Tj 和分布电感影响
per arm
热学参数
per IGBT
per diode
per module
RthCH _ arm RthCH _module * n
R R // R thCH _ arm
thCH _IGBT
thCH _ Diode
n 是一个module 中的 arms 数量
如果给出每个模块的热阻RthCH, 我们可以计算每个模块和二极管的热阻：
R R R R * R thCH _ IGBT
thJC _ IGBT
thJC _ Diode
thJC _ Diode
thCH _ module
R R R R * R thCH _ Diode
thJC _ IGBT
thJC _ Diode
thJC _ IGBT
thCH _ module
热学参数
电压参数
芯片能达到电压
模块能达到电压
由于模块内部寄生电感△V=di/dt*Lin
在动态情况下，模块耐压和芯片耐压有所区别
电压参数
饱和压降VCEsat
IFX IGBT的VCEsat 随温度的升高而增大，称为 VCEsat 具有正温度系数，利于芯片之间实现均流
VCEsat 是 IC的正向函数，随增大而增大IC

Infineon 60 GHz雷达FF模块用户手册和集成说明说明书

60 GHz radar form factor module based on Infineon reference designUser manual and integration instructions for host product manufacturersAbout this documentScope and purposeThis document is the user manual with integration instructions for the radar embedded form factor (FF) module with presence detection software.Intended audienceManufacturers who intend to integrate the Infineon 60 GHz radar (BGT60TR13C) embedded form factor solution into their host product.Table of contentsAbout this document (1)Table of contents (2)1Introduction (4)1.1General features (4)1.2Presence detection features (4)2Hardware information (5)2.1Block diagram (5)2.2Module pin definitions (6)2.3Recommended operating conditions (7)2.4Module RF parameters (8)3UART interface connection (9)3.1Example command (9)4Radar radiation pattern (10)4.1Test setup (10)4.2Radiation pattern (10)5FCC considerations (12)5.1List of applicable FCC rules (12)5.2Specific operational use conditions (12)5.3Limited module procedures (12)5.4Trace antenna design (13)5.5RF exposure considerations (13)5.6Antennas (13)5.7Label and compliance information (13)5.8Information on test modes and additional testing requirements (13)5.9Test mode command (13)5.10Important notes (14)6Reference design (15)6.1Design recommendation (15)6.2Integration of module without RF shield into host product (15)7Module information (17)7.1Module dimensions (17)7.2Recommended land pattern (18)8SMT/baking information (19)8.1Baking recommendations (19)8.2SMT recommendations (19)9Revision history (21)Glossary Table 1Abbreviations1IntroductionMotion sensing is a standard feature present in many devices. Today’s devices become smarter by knowing if the user is around or not. Traditionally, motion sensors have been designed using passive infrared sensing (PIR). As simple as PIR is, there are performance limitations. For example, PIR sensors cannot detect micro motions. In addition, they require a lens, whereas radar sensors can be covered and disguised behind plastic enclosures. Infineon’s presence detection sensor module integrates 60 GHz mmWave technology. The module simplifies the implementation of mmWave sensors in the band of 61.0 to 61.5 GHz, and it includes the ARM® Cortex®-M4F based processor system, 1TX 3RX antennas and onboard regulator. This presence detection sensor module targets low-power and high-resolution presence detection in smart home, office, and diverse other use cases.1.1General features∙ARM® Cortex®-M4F 150 MHz, 1024 kB Flash, 288 kB RAM∙Built-in antennas (1TX 3RX)∙Built-in regulator∙UART interface and GPIOs∙ 3.6~5 V power input∙26-pin pitch 1.27 mm castellated holes∙Dimensions: 20 x 15 x 2.3 mmFigure 160 GHz radar form factor module1.2Presence detection features∙Low power and high resolution∙Presence sensing for home, office and commercial buildings∙Adjustable detection range∙Field of view of radar: azimuth: ±45 degrees/elevation: ±40 degrees∙Immune to environmental factors such as temperature, wind, sunlight and dust/debris∙Detection range:o Detection up to 10 m for macro motion (1)o Detection up to 5 m for micro motion (2)(1) Macro motion: Human movements.(2) Micro motion: Stationary human (normally breathing and blinking eyes) in sitting or standing position with no active movements for at least 30 s.2Hardware information2.1Block diagramFigure 2Module block diagramThe main components of the module are the 60 GHz radar chip, the ARM® based MCU and the 80 MHz oscillator. The module has its own power supply regulation. UART is the communication interface to the host device.2.2Module pin definitions Figure 3Components on the moduleTable 3P2 Pin definitions2.3Recommended operating conditions(1)Based on firmware 237a4fe version.(2)Means ambient temperature when working.2.4Module RF parameters1Fixed by firmware to comply with granted FCC certification. Figure 4Module – E- and H-planeUART interface connection3UART interface connectionA UART interface is used to communicate with the radar module through binary commands. The UART TX and RX pins operate at TTL 3.3 V level. A detailed configuration of the UART interface is shown in the table below.3.1Example commandExample command to get firmware version:Command send to UART_RXD9 00 00 00 B4 DFReply command receive at UART_TXD9 00 1E 00 50 72 65 73 65 6E 63 65 44 65 74 65 63 74 5F 31 2E 33 2E 30 20 28 31 35 36 61 34 62 63 29 52 EFThe binary command is in the format of header + length + payload + checksum. For detailed information please refer to the “Infineon BGT60TR13C embed MCU4 binary command protocol manual”.Radar radiation pattern4Radar radiation pattern 4.1Test setupE-planeFigure 54.2Radiation patternFigure 6Radiation pattern of the E-planeRadar radiation patternFigure 7Radiation pattern of the H-plane5FCC considerationsThe reference module has been certified at FCC according to the rules as stated in chapter 5.1.Host product manufacturers must immediately file a 2.933 Change-in-ID application to obtain their own FCC ID for the module, and then a C2P application to authorize the module in their specific host device(s).Host product manufacturers are advised to carefully read the whole of chapter 5 and follow the guidelines according to KDB 996369 D04, or the latest updates of it.5.1List of applicable FCC rulesThe modular transmitter was tested according to the following rules:∙FCC Rules and Regulations Part 15, Subpart A – General (September 2019)∙Part 15, Subpart A, Section 15.31 Measurement standards∙FCC Rules and Regulations Part 15, Subpart C – Intentional Radiators (September 2019)∙Part 15, Subpart C, Section 15.203 Antenna requirements∙Part 15, Subpart C, Section 15.204 External radio frequency power amplifiers and antenna modifications∙Part 15, Subpart C, Section 15.205 Restricted bands of operation∙Part 15, Subpart C, Section 15.207 Conducted limits∙Part 15, Subpart C, Section 15.209 Radiated emission limits, general requirements∙Part 15, Subpart C, Section 15.255 Operation within the band 57 to 71 GHz.The modular transmitter is only FCC authorized for the specific rule parts listed on the grant. The host product manufacturer is responsible for compliance with any other FCC rules that apply to the host not covered by the modular transmitter grant of certification.5.2Specific operational use conditions∙The module is classified for use in fixed equipment, refer to chapter 5.5.∙The module is FCC- certified for the operating frequency range 61 to 61.5 GHz.∙The application software (SW) has the firmware (FW) ID 1.0.0.5.3Limited module proceduresThe modular transmitter is approved by FCC as a “limited module” due to the following limitations: ∙The module does not have its own RF shielding.∙The module does not have an FCC ID label attached to it. FCC ID: 2AYSQ-6011Notes:∙See also chapter 5.5 for human exposure considerations.∙The module has not been tested for simultaneous transmission operations.∙Refer to chapter 6.2 for integration methods that address the limitation due to RF shielding.5.4Trace antenna designNot applicable.5.5RF exposure considerations∙The performed human exposure evaluation is described in the “Human exposure RF test report” No. : T46134-04-00HS∙The module is classified for use in fixed equipment.o The host product operating conditions must be such that there is a minimum separation distance of 20 cm (or possibly greater than 20 cm) between the module and nearby persons.o The host product manufacturer is required to provide the following text in its end user manual: “In order to comply with FCC RF Exposure requirements this device must be operated with aminimum separation distance of 20 cm between the equipment and a person’s body.”5.6AntennasThe antenna is integrated into the radar chip (on-chip antenna).Type: Linear polarized strip patch array antenna; gain 5 dBi.5.7Label and compliance informationThe module does not have a FCC label attached to it. The host product manufacturer is advised to provide a physical or e-label stating “Contains FCC ID: ….” with the finished product. The manufacturer is advised to read “Guidelines for Labeling and User Information for RF Devices – KDB Publication 784748.”5.8Information on test modes and additional testing requirementsInfineon provides software that enables the host module manufacturer to operate the module in certain test modes, including the modes that have been used for FCC certification of the module:∙CW low frequency: Operates the module in CW at 61.019 GHz.∙CW mid frequency: Operates the module in CW at 61.249 GHz.∙CW high frequency: Operates the module in CW at 61.479 GHz.∙FMCW: Chirp mode V 1.0.0 (presence detection SW) according to FW version 1.0.0.The SW also provides additional options that might be useful in testing the host system – e.g. a mode that puts the module into sleep mode. See the next chapter for information on initializing and using the SW.5.9Test mode commandThe UART interface can be used to set up the module in test mode. The following table show the commands for entering different test modes. After power-up or reset, the module will be in presence detection mode, which is sending FMCW chirps. An acknowledge command will be sent from the module after a valid command is received.To enable RFCW mode, please follow the below command sequence:Disable presence detection →Enable RFCW output (low/mid/high)To resume chirp mode from RFCW mode, please follow the below command sequence:Disable RFCW output →Enable presence detection5.10Important notesThe host product manufacturer must provide the below text to the end-user:a) Changes or modifications not expressly approved by the party responsible for compliance could void the user’s authority to operate the equipment.b) This device complies with Part 15 of the FCC rules. Operation is subject to the following conditions:∙This device may not cause interference.∙This device must accept any interference, including interference that may cause undesired operation of the device.6Reference design6.1Design recommendation∙Please reserve the test points of the UART for FW upgrade in the future.∙Please keep the module solder layer free of ground plane/trace rout in the “keep-out area” (shown in Figure 12).∙The power trace for DC_IN must be at least 20 mm wide.Figure 8Recommended layout of radar module6.2Integration of radar module into host productConsiderations when integrating are to ensure that the emissions from the host electronics are not advertently impacting the module and preventing proper operation. Conversely, the module emissions shall not prevent the rest of the host from operating properly. The complete host must still comply with applicable FCC regulations.Therefore, a verification of the final product must be done, by at least spot-checking emissions from the device while operating the host as a complete system. This testing should be performed with the host product configured in typical operational modes to check the fundamental frequency and spurious emissions for compliance with all applicable rules.To reduce the impact of the module on emissions, the host product manufacturer is advised to follow these guidelines:∙Ensure that the maximum amount of the radar signal is indeed leaving the host device by ensuring that the signal is not unnecessarily reflected inside the host. See the Infineon “60 GHz radar radome design guide” for proper distances to housing surfaces and recommended housing materials.∙Place the radar module inside the host as far away as technically feasible from other electronics that have been identified as susceptible to RF emissions, or identified to be a potential source of suchemissions. Such potential sources include other intentional transmitters or digital electronics operating at MHz clock rates.Put the PCB with the radar module soldered onto it within a separate section of the host, where it can be shielded from other host electronics. The shielding should be made of sheet metal, metal mesh or a metallic ink-coated material expressly designed as an effective shield. Any holes in the shield must be significantly smaller than the wavelength of the radiation that is being blocked. For 60 GHz radar that would mean maximum 0.5 mm.Whereas the first item should always be followed by the host manufacturer, the manufacturer can evaluate whether items two or three are suitable for the product and take measures to keep overall emissions below regulatory limits.7Module information7.1Module dimensionsTop view Side viewBottom viewFigure 9Module dimensions7.2Recommended land pattern Figure 10Recommended land pattern dimensions8SMT/baking information8.1Baking recommendationsBaking conditions:∙Follow MSL Level 4 to carry out the baking process.∙After the bag is opened, devices that will be subjected to reflow solder or other high-temperature processes must be:o mounted within 72 hours of factory conditions at less than 30°C/60 percent RHo stored at less than 10 percent RH.∙Devices require baking before mounting if the humidity indicator card reads more than 10 percent.∙If baking is required, devices may be baked for 8 hours at 125°C.8.2SMT recommendationsRecommended reflow profile:Figure 11Reflow profile of moduleNote: Add nitrogen during the reflow process to improve SMT solderability.∙Stencil thickness: 0.1~0.13 mm (recommended)∙Soldering paste (without Pb): SENJU N705-GRN3360-K2-V for best soldering effects.60 GHz Radar FF Module for Presence Detection based on InfineonReference DesignTable of contents9Revision history21Trademarks All referenced product or service names and trademarks are the property of their respective owners.Edition June 2021AppNote NumberPublished by Infineon Technologies AG 81726 Munich, Germany© 2021 Infineon Technologies AG. All Rights Reserved. Do you have a question about this document? Email: ******************** Document reference IMPORTANT NOTICE The information contained in this application note is given as a hint for the implementation of the product only and shall in no event be regarded as a description or warranty of a certain functionality, condition or quality of the product. Before implementation of the product, the recipient of this application note must verify any function and other technical information given herein in the real application. Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind (including without limitation warranties of non-infringement of intellectual property rights of any third party) with respect to any and all information given in this application note. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( ). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.。

英飞凌各代IGBT模块技术详解

英飞凌各代IGBT模块技术详解IGBT 是绝缘门极双极型晶体管（Isolated Gate Bipolar Transistor）的英文缩写。

它是八十年代末，九十年代初迅速发展起来的新型复合器件。

由于它将 MOSFET 和 GTR 的优点集于一身，既有输入阻抗高，速度快，热稳定性好，电压驱动（MOSFET 的优点，克服 GTR 缺点）；又具有通态压降低，可以向高电压、大电流方向发展（GTR 的优点，克服 MOSFET 的缺点）等综合优点，因此 IGBT 发展很快，在开关频率大于 1KHz，功率大于 5KW 的应用场合具有优势。

随着以 MOSFET、IGBT 为代表的电压控制型器件的出现，电力电子技术便从低频迅速迈入了高频电力电子阶段，并使电力电子技术发展得更加丰富，同时为高效节能、省材、新能源、自动化及智能化提供了新的机遇。

英飞凌／EUPEC IGBT 芯片发展经历了三代，下面将具体介绍。

一、IGBT1－平面栅穿通（PT）型 IGBT （1988 1995）西门子第一代 IGBT 芯片也是采用平面栅、PT 型 IGBT 工艺，这是最初的 IGBT 概念原型产品。

生产时间是 1990 年－ 1995 年。

西门子第一代 IGBT 以后缀为“DN1” 来区分。

如 BSM150GB120DN1。

图 1.1 PT-IGBT 结构图PT 型 IGBT 是在厚度约为 300－500μm 的硅衬底上外延生长有源层，在外延层上制作IGBT 元胞。

PT-IGBT 具有类 GTR 特性，在向 1200V 以上高压方向发展时，遇到了高阻、厚外延难度大、成本高、可靠性较低的障碍。

因此，PT-IGBT 适合生产低压器件，600V 系列 IGBT 有优势。

二、IGBT2－第二代平面栅 NPT-IGBT西门子公司经过了潜心研究，于 1989 年在 IEEE 功率电子专家会议（PESC）上率先提出了 NPT－IGBT 概念。

由于随着 IGBT 耐压的提高，如电压VCE≥1200V，要求 IGBT 承受耐压的基区厚度dB>100μm，在硅衬底上外延生长高阻厚外延的做法，不仅成本高，而且外延层的掺杂浓度和外延层的均匀性都难以保证。

英飞凌IGBT模块应用笔记

英飞凌IGBT模块应用笔记目录1 摘要2 导言2.1 数据表的状态2.2 型号命名规则3 数据表参数——IGBT3.1 集电极-发射极电压VCES3.2 总功率损耗集电极-发射极电压Ptot3.3 集电极电流IC3.4 重复性集电极峰值电流ICRM3.5 反向偏压安全运行区域RBSOA3.6 典型输出和传递特性3.6.1 IGBT器件结构以及IGBT与功率MOSFET在输出特性上的区别3.6.2 传递特性和输出特性（IGBT数据表）3.7 寄生电容3.7.1 测定电路3.7.2 栅极电荷Qg和栅极电流3.7.3 寄生导通效应3.8 开关时间3.9 短路3.10 泄漏电流ICES和IGES3.11 热特性4 数据表参数——二极管4.1 正向电流IF和正向特性4.2 重复性峰值正向电流IFRM4.3 反向恢复4.4 特热性5 数据表参数——NTC热敏电阻5.1 NTC阻值5.2 B值6 数据表参数——模块6.1 绝缘电压VISOL6.2 杂散电感LS6.3 模块电阻RCC’+EE’6.4 冷却回路6.5 安装扭矩M7 参考资料1 摘要注释：本应用笔记中给出的下列信息仅作为关于实现该器件的建议，不得被视为就该器件的任何特定功能、条件或质量作出的任何说明或保证。

本应用笔记旨在对IGBT模块的数据表中给出的参数和图表予以解释。

本应用笔记有助于要求使用IGBT模块的功率电子元件的设计者正确地使用该数据表，并为其提供背景信息。

文章来源：数据表中提及的每一项参数都给出了尽可能详细地表明该模块的特性的值。

一方面，有了这些信息，设计者应当能够对不同竞争对手提供的器件进行相互比较，另一方面，根据这些信息，设计者应当足以理解该器件的局限性所在。

本文档有助于更加深刻地理解数据表中标示的参数和特性。

本文档解释了这些参数与诸如温度等条件的影响之间的相互作用。

提及动态特性试验的数据表值，如开关损耗，均与具备确定的杂散电感和栅极电阻等等值的特定试验设置有关。

英飞凌IGBT模块规格的正确理解_XXXX0727新

di/dt CGE
dv/dt
di/dt RG
dv/dt
开关参数
门极电荷 (QG)
QG 用来计算驱动所需功率，为VGE 在+/-15V时的典型值
Cies, Cres
Cies = CGE + CGC: 输入电容（输出短路）
Coss = CGC + CEC:输出电容（输入短路）
Cres = CGC: 反向转移电容 (米勒电容) 频率f，所需的驱动功率:
短路坚固性
IGBT2为平面栅IGBT:5-8倍IC IGBT3/IGBT4为沟槽栅IGBT:4倍IC
电压参数
集电极-发射极阻断电压Vces
测量Vces时，G/E两极必须短路 Vces为IGBT模块所能承受的最大电压，在任
何时候CE间电压都不能超过这一数值，否则将造成去器件击穿损坏 Vces和短路电流ISC 一起构成了IGBT模块的安全工作区：RBSOA图
开关参数
RGext 的取值
IGBT要求的RGext 的最小值驱动器要求的RGext 的最小值
开关参数
外部门极电容(CGE)
为了控制高压IGBT的开启速度，推荐使用外部门极电容CGE
有了CGE ，开启过程的di/dt和dv/dt可以被分开控制，即可以用更小的RG ;从而实现了低的开关损耗和较低的开通di/dt
P Qg VGE f
P Cies 5 VGE 2 f
CGC G
CGE
C CEC
E
开关参数
开关时间(tdon, tr, tdoff, tf)
These values are greatly influenced by IG(RG), IC, VGE, Tj. These value can be used to determine the dead time:

Infineon IM240-S6 Series 三相智能电力模块说明书

IM240S6Y1BAKMA1IM240S6Y2BAKMA1IM240-S6Z1B / IM240-S6Y1B / IM240-S6Y2BCIPOS ™ Micro 600V / 3AIM240-S6Z1B / IM240-S6Y1B / IM240-S6Y2B DescriptionIM240-M6 Series are 3-phase Intelligent Power Modules (IPM) designed for advanced appliance motor drive applications such as energy efficient fans and pumps. These advanced IPMs offers a combination of low V CE(sat) RC -DF IGBT technology and the industry benchmark half -bridge high voltage, rugged driver in a familiar pack-age.Features∙ 600V 3-phase inverter including gate drivers &∙ bootstrap function∙ Low 2.1V V CE(sat) (typ, 25°C, 2.5A) RC -DF IGBT ∙ UL Certified Temperature Sense (NTC) ∙Advanced input filter with shoot -throughprotection∙Optimized dV/dt for loss and EMI trade offs∙ Open -emitter for single and leg -shunt current sensing∙ 3.3V logic compatible∙ Driver tolerant to negative voltage (-VS) ∙ Undervoltage lockout for all channels ∙Isolation 1900VRMS, 1minPotential Applications∙ Air -conditioner fans∙ Refrigerator compressors ∙ Ventilation fans & blower fans ∙Low power motor drivesProduct validationQualified for industrial applications according to the relevant tests of JEDEC47/20/22. Table1 Part Ordering TableDIP23 IM240-S6Y1B SOP23 IM240-S6Z1BDIP23A IM240-S6Y2BAPPROVEDIM240-S6Z1B / IM240-S6Y1B / IM240-S6Y2BTable of ContentsTable of ContentsDescription (1)Features (1)Potential Applications (1)Product validation (1)Table of Contents (2)1Internal Electrical Schematic (3)2Pin Configuration (4)2.1 Pin Assignment (4)2.2 Pin Descriptions (5)3Absolute Maximum Rating (7)3.1 Module (7)3 .2 Inverter (7)3 .3 Control (7)4Thermal Characteristics (8)5 Recommended Operating Conditions (9)6 Static Parameters (10)6.1 Inverter (10)6 .2 Control (10)7 Dynamic Parameters (11)7.1 Inverter (11)7 .2 Control (11)8 Thermistor Characteristics (12)9 Mechanical Characteristics and Ratings (13)10 Qualification Information (14)11 Diagrams & Tables (15)11.1 Tc Measurement Point (15)11 .2 Backside Curvature Measurement Points (15)11.3 Input-Output Logic Table (16)11.4 Switching Time Definitions (17)12 Application Notes (18)12.1 Typical Application Schematic (18)12.2 Performance Charts (18)12.3 T J vs T TH (19)12.4 –V S Immunity (19)13 Package Outline (20)12.1 SOP23 (20)12.2 DIP23A (21)12.3 DIP23 (22)Revision History (23)IM240-S6Z1B / IM240-S6Y1B / IM240-S6Y2B Internal Electrical Schematic1 Internal Electrical SchematicFigure 1 Internal electrical schematicIM240-S6Z1B / IM240-S6Y1B / IM240-S6Y2B Pin Configuration2 Pin ConfigurationTable 2 Pin AssignmentIM240-S6Z1B / IM240-S6Y1B / IM240-S6Y2BPin Configuration2.2 Pin DescriptionsHIN(1,2,3) and LIN(1,2,3) (Low side and high side control pins)These pins are positive logic and they are responsible for the control of the integrated IGBT. The Schmitt -trigger input thresholds of them are such to guarantee LSTTL and CMOS compatibility down to 3.3V controller outputs. Pull -down resistor of about 800kW is internally provided to pre -bias inputs during supply start -up and an ESD diode is provided for pin protection purposes. Input Schmitt -trigger and noise filter provide beneficial noise rejection to short input pulses.The noise filter suppresses control pulses which are below the filter time T FILIN . The filter actsThe integrated gate drive provides additionally a shoot through prevention capability which avoids the simultaneous on -state of the high -side and low -side switch of the same inverter phase. A minimumdead time insertion of typically 300ns is also provided by driver IC, in order to reduce cross -conduction of the external power switches.V DD ,COM (Low side control supply and reference) V DD is the control supply and it provides power both to input logic and to output power stage. Input logic is referenced to COM ground.The under -voltage circuit enables the device to operate at power on when a supply voltage of at least a typical voltage of V DDUV+ = 11.1V is present. The IC shuts down all the gate drivers power outputs, when the VDD supply voltage is below V DDUV - = 10.9V. This prevents the external power switches from critically low gate voltage levels during on -state and therefore from excessive power dissipation.V B(1,2,3) and V S(1,2,3) (High side supplies)V B to V S is the high side supply voltage. The high side circuit can float with respect to COM following the external high side power device emitter voltage.Due to the low power consumption, the floating driver stage is supplied by integrated bootstrap circuit.The under -voltage detection operates with a rising supply threshold of typical V BSUV+ = 11.1V and a falling threshold of V BSUV - = 10.9V.V S(1,2,3) provide a high robustness against negative voltage in respect of COM. This ensures very stable designs even under rough conditions. V R(1,2,3) (Low side emitters)The low side emitters are available for current measurements of each phase leg. It is recommended to keep the connection to pin COM as short as possible in order to avoid unnecessary inductive voltage drops.IM240-S6Z1B / IM240-S6Y1B / IM240-S6Y2BVTH (Thermistor output)A UL certified NTC is integrated in the module with one terminal of the chip connected to COM and the other to VTH. When pulled up to a rail voltage such as VDD or 3.3V by a resistor, the VTH pin provides an analog voltage signal corresponding to the temperature of the thermistor. U/V S1, V/V S2, W/V S3 (High side emitter and low side collector)These pins are motor U, V, W input pins.V+ (Positive bus input voltage, Pin 23)The high side IGBTs are connected to the bus voltage. It is noted that the bus voltage does not exceed 450V.Pin ConfigurationIM240-S6Z1B / IM240-S6Y1B / IM240-S6Y2B Absolute Maximum Rating3 Absolute Maximum Rating 3.1 Module3.2 Inverter3.3 ControlIM240-S6Z1B / IM240-S6Y1B / IM240-S6Y2B Thermal Characteristics4 Thermal CharacteristicsIM240-S6Z1B / IM240-S6Y1B / IM240-S6Y2BRecommended Operating Conditions5 Recommended Operating Conditions6 Static Parameters6.1 Inverter6.2 Control(V DD -COM) = (V B - V S ) = 15 V. T C = 25°C unless otherwise specified.(V DD -COM) = (V B - V S ) = 15 V. T C = 25°C unless otherwise specified. The V IN and I IN parameters are referenced to COM and are applicable to all six channels. The V DDUV parameters are referenced to COM. The V BSUV parameters are referenced to VS.7 Dynamic Parameters7.1 Inverter(V DD-COM) = (V B- V S) = 15 V. T C = 25°C unless otherwise specified7.2 Control(V DD-COM) = (V B- V S) = 15 V. T C = 25°C unless otherwise specified.Thermistor Characteristics8 Thermistor CharacteristicsFigure 5 Thermistor resistance –temperature curve, for REXT=9.76kΩ, and thermistor resistancevariation with temperature.Mechanical Characteristics and Ratings9 Mechanical Characteristics and RatingsQualification Information10 Qualification Information11 Diagram & Tables 11.1 Tc Measurement Point11.3 Input-Output Logic Table‡ Voltage depends on direction of phase current11.4 Switching Time DefinitionsFigure 9 Switching times definition12 Application Guide 12.1 Typical Application Schematic12.2 Performance Charts12.3 T J vs T THJ TH12.4 –V S ImmunityFigure 13 Negative transient Vs SOA for integrated gate driver13 Package Outline13.1 SOP23Dimensions in mm13.2 DIP23ADimensions in mm13.3 DIP23Dimensions in mmRevision History14 Revision HistoryOther TrademarksAll referenced product or service names and trademarks are the property of their respective owners.IMPORTANT NOTICEThe information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) .With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications.The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ().WARNINGSDue to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office.Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.Edition 2018-03-02Published byInfineon Technologies AG81726 Munich, Germany© 2019 Infineon Technologies AG. All Rights Reserved.Do you have a question about this document?Email: ********************Document referenceIM240S6Y1BAKMA1IM240S6Y2BAKMA1。

IGBT并联

1 引言随着市场对兆瓦级大功率变流器的需求与日俱增，igbt并联方案目前已成为一种趋势。

这主要源于igbt并联能够提供更高电流密度、均匀热分布、灵活布局以及较高性价比(这取决于器件及类型)等优势。

图1所示为经常会采用的两种igbt并联方式，即模块之间和臂之间。

通过将小功率igbt模块(包括分立式igbt)、大功率igbt模块进行并联组合，可获得不同额定电流的等效模块，且实现并联的连接方式也很灵活、多样。

以高压变频器中广泛采用的h桥拓扑结构功率单元为例，其并联实现可以用不同电路结构的igbt模块，如半桥“ff”、单个“f z”、四单元“f4”和六单元“fs”。

这将使客户有很大自由度选择性价比高的并联解决方案。

另外，并联可降低模块热集中，使其获得更加均匀的温度梯度分布，较低的平均散热器温度，这有益于提高热循环周次。

因此，igbt并联是大功率设计应用的最佳解决方案之一。

图1 臂或模块并联然而，并联igbt之间静态与动态性能的差异会影响均流，使得有效目标输出电流不得不被降额。

通常，降额系数是根据最差的并联情况进行假定，但这种假设在实际应用中并不合理，且被过高估计，这也会增加客户设计成本。

从统计角度方面，差异性很大的模块并联概率是很小的，且igbt参数之间偏离可以忽略。

从均流角度方面，并联设计好坏对降额起关键性的作用，且远大于igbt自身参数差异性所引起的问题。

因此，并联应重点考虑如何通过设计确保均流，而不是把重心放在模块参数偏离所造成的影响。

附表为说明哪些因素会引起均流的差异。

并联设计将集中在这些因素上面以优化驱动回路、功率换流回路、模块布局以及冷却条件等, 其目的是确保每个并联支路尽可能实现对称。

本文将提供一些并联设计方面的措施和建议，以帮助客户成功完成并联。

2 静态性能2.1 ptc 特性在不同额定电压(600v、1200v、1700v 和3300v)条件下，英飞凌npt和沟槽场终止igbt芯片的饱和电压v cesat都随着结温升高而增加，呈现正温度系数特性。