ULN2803发光二极管驱动芯片
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Octal High Voltage,High Current Darlington
Transistor Arrays ULN2803APG/AFWG
DESCRIPTIONS：
The eight NPN Darlington connected transistors in this
family of arrays are ideally suited for interfacing between
low logic level digital circuitry (such as TTL, CMOS or
PMOS/NMOS) and the higher current/voltage
requirements of lamps, relays, printer hammers or other similar loads for a broad range of computer, industrial, and consumer applications. All devices feature
open–collector outputs and free wheeling clamp diodes for transient suppression
DIP18
SOP18
The ULN2803 is designed to be compatible with standard TTL families while the ULN2804 is optimized for 6 to 15 volt high level CMOS or PMOS.
PIN CONNECTION
TIGER ELECTRONIC CO.,LTD
ABSOLUTE MAXIMUM RATINGS (T A = 25°C and rating apply to any one device
in the package, unless otherwise noted.)
Characteristic Symbol Value Unit
Output voltage V O 50 V Input voltage
V I 30 V Collector current- continuous I C 500 mA Base current- continuous I B 25 mA Operating temperature Topr 0～70 °C Storage temperature Tstg -55～+150
°C Junction temperature T J
125
°C
* R θJ A =55°C/W
Do not exceed maximum current limit per driver.
ELECTRICAL CHARACTERISTICS
(unless otherwise specified: T A =25°C)
Characteristics Symbol Test conditions Min Typ Max Unit
Vo=50V, T A =70°C 100
Output leakage current (Fig.1)
I C E X
Vo=50V, T A =25°C 50 µA
Ic=350mA,I B =500µA 1.1 1.6 Ic=200mA,I B =350µA 0.95 1.3 Collector-Emitter
saturation voltage (Fig.2) V CE(sat)Ic=100mA,I B =250µA 0.85 1.1
V Input current
- on condition (Fig.4) I I (o n )V I =3.85V
1.1 1.35 mA V C E =
2.0V,I C =200mA 1.70 2.4 V C E =2.0V,I C =250mA 1.75 2.7 Input voltage
- on condition (Fig.5) V I (o n )V C E =2.0V,I C =300mA 1.80 3.0 V Input current
- off condition (Fig.3) I I (o ff )I C =500µA, T A =70°C
50 100
µA
Input capacitance C I
15 25 pF
Turn-on delay time (50% E I to 50% E O ) t on 0.25 1.0 µs Turn-off delay time (50% E I to 50% E O ) t off 0.25 1.0 µs T A =25°C 50
Clamp diode leakage
current (V R =50V) (Fig.6) I R T A =70°C 100 µA
Clamp diode forward Voltage (Fig.7)
V F
I F =350mA
1.5
2.0 V
TEST CIRCUIT
TYPICAL CURVE
OUTLINE DRAWING