SS8050三极管
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors
SS8050 TRANSISTOR (NPN )
FEATURES
P CM : 1 W (T A =25.) : 2 W (T C =25.)
MAXIMUM RATINGS (T a =25℃ unless otherwise noted)
Parameter
Symbol
Test conditions
M in
T yp
M ax
U nit
Collector-base breakdown voltage V (BR)CBO
I C =100uA, I E =0 40 V Collector-emitter breakdown voltage V (BR)CEO
I C =0.1mA, I B =0 25 V Emitter-base breakdown voltage V (BR)EBO
I E =100μA, I C =0 5 V Collector cut-off current I CBO
V CB =40V, I E =0 0.1 μA Emitter cut-off current I CEO
V CE =20V, I E =0 0.1 μA Emitter cut-off current I EBO V EB =5V, I C =0 0.1 μA h FE(1) V CE =1V, I C =100mA 85 400 DC current gain
h FE(2)
V CE =1V, I C =800mA
40
Collector-emitter saturation voltage V CE(sat) I C =800mA, I B =
80mA 0.5 V Base-emitter saturation voltage V BE(sat) I C =800mA, I B =
80mA 1.2 V Base-emitter voltage V BE V CE =1V, I C =10mA 1 V Transition frequency f T
V CE =10V, I C =50mA,f=30MH Z 100
MHz
CLASSIFICATION OF h FE(1)
Rank B C D D3
Range
85-160 120-200 160-300 300-400
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
B,Feb,2012
【南京南山半导体有限公司 — 长电三极管选型资料】
0255075100125150
200
400
600
800
1000
1200
0.2
0.4
0.6
0.8
1.0
1.2
1
10
100
1000
10
100
1000
300
3
C
O
L
L
C
E
T
O
R
C
U
R
R
E
N
T
I
C
(
m
A
)
BASE-EMMITER VOLTAGE V
BE
(V)
I
C
V ——
I
f ——
T
R
A
N
S
I
T
I
O
N
F
R
E
Q
U
E
N
C
Y
f
T
(
M
H
z
)
COLLECTOR CURRENT I
C
(mA)
C
O
L
L
E
C
T
O
R
P
O
W
E
R
D
I
S
S
I
P
A
T
I
O
N
P
C
(
m
W
)
AMBIENT TEMPERATURE T
a
()
℃
P
C
—— T
a
SS8050 Typical Characterisitics
COLLECTOR CURRENT I
C
(mA)
B
A
S
E
-
E
M
I
T
T
E
R
S
A
T
U
R
A
T
I
O
N
V
O
L
T
A
G
E
V
B
E
s
a
t
(
V
)
I
C
V
BEsat
——
C
A
P
A
C
I
T
A
N
C
E
C
(
p
F
)
REVERSE VOLTAGE V (V)
V
CB
/ V
EB
C
ob
/ C
ib
——
300
30
300
D
C
C
U
R
R
E
N
T
G
A
I
N
h
F
E
COLLECTOR CURRENT I
C
(mA)
I
h ——
C
O
L
L
E
C
T
O
R
C
U
R
R
E
N
T
I
C
(
m
A
)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
Static Characteristic
COLLECTOR CURRENT I
C
(mA)
I
C
V
CEsat
——
1500
B,Feb,2012