si4463dy数据手册

Dynamicb
VGS(th) IGSS
IDSS ID(on) rDS(on)
gfs VSD
VDS = VGS, ID = −250 mA VDS = 0 V, VGS = "12 V VDS = −20 V, VGS = 0 V
VDS = −20 V, VGS = 0 V, TJ = 70_C VDS = −5 V, VGS = −4.5 V VGS = −4.5 V, ID = −13 A VGS = −2.5 V, ID = −11 A VDS = −10 V, ID = −13 A IS = −2.7 A, VGS = 0 V
S G
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range
−0.6
1.6
V
"100
nA
−1 mA
−10
−30
A
0.009
0.014
W
0.013
0.020
50
S
−0.65
−1.1
V
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance
Qg
Qgs
VDS = −10 V, VGS = −4.5 V, ID = −13 A
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71819 S-50694—Rev. C, 18-Apr-05
Source-Drain Diode Forward Voltage 50
TJ =150_C 10
rDS(on) − On-Resiistance (Normalized)
C − Capacitance (pF)
6400 Ciss
4800
3200
1600
0 0
Coss
Crss
4
8
12
16
20
VDS − Drain-to-Source Voltage (V)
Single Pulse 10−3
2
1 Duty Cycle = 0.5
Notes:
PDM
t1
t2 1. Duty Cycle, D =
t1 t2
2. Per Unit Base = RthJA = 70_C/W
3. TJM − TA = PDMZthJA(t)
4. Surface Mounted
10−2
Parameter
Symbol
Test Condition
Min
Typ
Max Unit
Static
Gate Threshold Voltage Gate-Body Leakage
Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea
10−1
1
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
100
600
Normalized Effective Transient Thermal Impedance
0.2
On-Resistance vs. Junction Temperature 1.6
VGS = 4.5 V ID = 13 A 1.4
1.2
1.0
0.8
0.6 −50 −25 0
25 50 75 100 125 150
TJ − Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage 0.05
Normalized Thermal Transient Impedance, Junction-to-Ambient 2
1 Duty Cycle = 0.5
Normalized Effective Transient Thermal Impedance
0.2
0.1 0.1
0.05
0.02
0.01 10−4
0.1 0.1
0.05 0.02
Single Pulse
0.01
10−4
10−3
10−2
10−1
1
10
Square Wave Pulse Duration (sec)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?71819.
IF = −2.1 A, di/dt = 100 A/ms
35
55
45
70
160
240
ns
140
210
55
80
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
D Lead (Pb)-Free Version is RoHS Compliant
Available
SO-8
S1 S2 S3 G4
8D 7D 6D 5D
Top View
Ordering Information: Si4463DY-T1 Si4463DY-T1—E3 (Lead (Pb)-Free)
Si4463DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.030
On-Resistance vs. Drain Current
8000
Capacitance
rDS(on) − On-Resistance ( W )
V GS − Gate-to-Source Voltage (V)
Qgd
Rg
46
70
9
nC
13.2
3.2
W
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time
td(on) tr
td(off) tf trr
VDD = −10 V, RL = 10 W ID ^ −1 A, VGEN = −4.5 V, RG = 6 W
TA = 25_C TA = 70_C
TA = 25_C TA = 70_C
VDS VGS
ID IDM IS PD TJ, Tstg
−20
"12
−13
−9
−10
−7
−50
−2.7
−1.36
3.0
1.5
1.9
0.95
−55 to 150
Unit
V
A
W _C
THERMAL RESISTANCE RATINGS Parameter
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50
50
VGS = 5 thru 2.5 V
40
40
30
2V
30
Transfer Characteristics
TC = −55_C 25_C
125_C
I D − Drain Current (A) I D − Drain Current (A)
P-Channel 2.5-V (G-S) MOSFET
Si4463DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.014 @ VGS = −4.5 V −20