真空纳米间隙晶体管
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SECTION 2: NVCT STRUCTURES
THE LATERAL NVCTS
The lateral NVCTs can be further classified in terms of the position of the gate. Generally there are three configurations which are back (bottom) gate, top (coplanar) gate and surround gate, respectively. A lateral device offers better design freedom by designing various layout.[PRINCIPLES]
Integratable
Low operational voltage
Nanoscale Vacuum
High electron mobility Immunity of radiation
M • S MANKIW SHANNON
NVC T
Section 2 NVCT STRUCTURES
M • S MANKIW SHANNON
SMALL DRAIN CURRENT & LOW GATE CONTROLLABILITY & INSTABILITY
Although the collector current of the lateral NVCTS is higher than the vertical ones, it is also too low to be integrated with solid-state transistors. And similarly the lateral NVCTs demonstrate a weak gate controllability. A trickier problem for the lateral NVCTs is their instability caused by the emitter degradation.
SECTION 1: PROMISING ADVANTAGES
THE ADVANTAGES OF NVCT MOSTLY DERIVE FROM THEIR VACUUM CHANNELS AND CHANNEL SIZES LESS THAN 100 NANOMETERS
Whereas charge flowing through a semiconducting channel will usually scatter, causing power loss and a degradation in signal quality, the electrons in a vacuum tube travel unperturbed from cathode to anode. As a result, all else being equal, vacuum tubes can operate at higher frequencies and power than equivalent solid-state semiconductor devices [Brian R ,Nature nanotechnology, 2012 ]. vacuum electronics offers advantages in terms of immunity to radiation [Jin-Woo Han, Nature electronics, 2019 ].
• NVCT is characterized by its short vacuum channel with which it may be faster and robuster than solid-state devices when being operated in such an environment fulfilled with radiation.
Jin-Woo Han, applied physics letters,2013.
A M • S MANKIW
SHANNON
Wen-Teng Chang, IEEE transactions on electron devices, 2019.
B
Jin-Woo Han, nature letters, 2017.
16nm FinFET
M • S MANKIW SHANNON
Jin-Woo Han, nature electronics, 2019.
A
. Shien-Yang Wu, IEDM Tech. Dig,2013 B
SECTION 3: EXISTING PROBLEMS & POTENTIAL APPLICATIONS
Vacuum microelectronics, which applied these principles to smaller devices, was launched with the development of the microfabricated fieldemission cathode by Spindt and co-workers in the late 1960s [Brian R ,Nature nanotechnology, 2012 ].. And thanks to the improvement of microfabrication process, a channel length on the order of the electron mean free path in atmosphere can be fabricated.
A. A. G. Driskill-Smith, applied physics letters, 1999.
A M • S MANKIW
SHANNON
Siwapon Srisonphan, nature nanotechnology, 2012.
BBiblioteka Baidu
Jin-Woo Han, nature electronics, 2019.
M • S MANKIW SHANNON
1m 100mm
10mm 1mm
100um 10um 1um
100nm 10nm 1nm
Electron mean free path in atmosphere
1930
1950
1968
1980s
2012 Source: Brian R ,Nature nanotechnology, 2012. .
No matter what kinds of structures, the collector current is too small, which might not be able to drive MOS devices and fail to be compatible with CMOS circuitry. A low gate controllability typically prevents the reported NVCTs from processing signal, Especially for the vertical structure.
C
NVC T
Section 3 EXISTING PROBLEMS & POTENTIAL APPLICATIONS
M • S MANKIW SHANNON
SECTION 3: EXISTING PROBLEMS & POTENTIAL APPLICATIONS
SMALL DRAIN CURRENT & LOW GATE CONTROLLABILITY
SECTION 2: NVCT STRUCTURES
GENERALLY, TWO KINDS OF NVCT STRUCTURES ARE REPORTEDLATERAL NVCT AND VERTICAL NVCT
A lateral NVCT consists of a collector that is deployed in the common plane with the source. Whereas the source and collector of a vertical NVCT are out of the plane of the wafer.
M • S MANKIW SHANNON
A. A. G. Driskill-Smith, applied physics letters, 1999.
A
Siwapon Srisonphan, nature nanotechnology, 2012.
B
SECTION 1: EXISTING PROBLEMS & POTENTIAL APPLICATIONS
N V N V C T ANOSCALE ACUUM HANNEL RANSISTOR C T
NVCT OVERVIEW
Introduction
• NVCT was born for the demand of immunity of radiation and with the help of microfabrication process.
Currently, two different structures classified as vertical NVCTs are reported, one is Spindt FET and the other is shown in figure B&C, the latter one is reported to form a 2DES around the channel edge. It is difficult for the vertical structure in figure A to achieve geometrical dimensions such as gap spacing to be identical over all devices on the substrate. Structures in B and C offers various channel length by controlling the thickness of gate layers and oxide layers.
• NVCT is potential to be utilized in aerospace application, albeit still an immature devices for some shortcomings to be eliminated.
M • S MANKIW SHANNON
Siwapon S, nature nanotechnology, 2012
M • S MANKIW SHANNON
Wen-Teng C, IEEE transactions on electron devices, 2019.
SECTION 2: NVCT STRUCTURES
THE VERTICAL NVCTS
SMALL DRAIN CURRENT & LOW GATE CONTROLLABILITY
In order to acquire larger current, NVCT arrays is an option when the area is not a restriction for specific application.
PREFACE - i -
NVC T
Section 1 DEVELOPMENT&PROMISIN G ADVANTAGES
M • S MANKIW SHANNON
SECTION 1: DEVELOPMENT OF NVCT
THE DEVELOPMENT OF NVCT IS CHARACTERIZED BY THE SCALE-DOWN OF THE CHANNEL LENGTH
SECTION 2: NVCT STRUCTURES
THE LATERAL NVCTS
The lateral NVCTs can be further classified in terms of the position of the gate. Generally there are three configurations which are back (bottom) gate, top (coplanar) gate and surround gate, respectively. A lateral device offers better design freedom by designing various layout.[PRINCIPLES]
Integratable
Low operational voltage
Nanoscale Vacuum
High electron mobility Immunity of radiation
M • S MANKIW SHANNON
NVC T
Section 2 NVCT STRUCTURES
M • S MANKIW SHANNON
SMALL DRAIN CURRENT & LOW GATE CONTROLLABILITY & INSTABILITY
Although the collector current of the lateral NVCTS is higher than the vertical ones, it is also too low to be integrated with solid-state transistors. And similarly the lateral NVCTs demonstrate a weak gate controllability. A trickier problem for the lateral NVCTs is their instability caused by the emitter degradation.
SECTION 1: PROMISING ADVANTAGES
THE ADVANTAGES OF NVCT MOSTLY DERIVE FROM THEIR VACUUM CHANNELS AND CHANNEL SIZES LESS THAN 100 NANOMETERS
Whereas charge flowing through a semiconducting channel will usually scatter, causing power loss and a degradation in signal quality, the electrons in a vacuum tube travel unperturbed from cathode to anode. As a result, all else being equal, vacuum tubes can operate at higher frequencies and power than equivalent solid-state semiconductor devices [Brian R ,Nature nanotechnology, 2012 ]. vacuum electronics offers advantages in terms of immunity to radiation [Jin-Woo Han, Nature electronics, 2019 ].
• NVCT is characterized by its short vacuum channel with which it may be faster and robuster than solid-state devices when being operated in such an environment fulfilled with radiation.
Jin-Woo Han, applied physics letters,2013.
A M • S MANKIW
SHANNON
Wen-Teng Chang, IEEE transactions on electron devices, 2019.
B
Jin-Woo Han, nature letters, 2017.
16nm FinFET
M • S MANKIW SHANNON
Jin-Woo Han, nature electronics, 2019.
A
. Shien-Yang Wu, IEDM Tech. Dig,2013 B
SECTION 3: EXISTING PROBLEMS & POTENTIAL APPLICATIONS
Vacuum microelectronics, which applied these principles to smaller devices, was launched with the development of the microfabricated fieldemission cathode by Spindt and co-workers in the late 1960s [Brian R ,Nature nanotechnology, 2012 ].. And thanks to the improvement of microfabrication process, a channel length on the order of the electron mean free path in atmosphere can be fabricated.
A. A. G. Driskill-Smith, applied physics letters, 1999.
A M • S MANKIW
SHANNON
Siwapon Srisonphan, nature nanotechnology, 2012.
BBiblioteka Baidu
Jin-Woo Han, nature electronics, 2019.
M • S MANKIW SHANNON
1m 100mm
10mm 1mm
100um 10um 1um
100nm 10nm 1nm
Electron mean free path in atmosphere
1930
1950
1968
1980s
2012 Source: Brian R ,Nature nanotechnology, 2012. .
No matter what kinds of structures, the collector current is too small, which might not be able to drive MOS devices and fail to be compatible with CMOS circuitry. A low gate controllability typically prevents the reported NVCTs from processing signal, Especially for the vertical structure.
C
NVC T
Section 3 EXISTING PROBLEMS & POTENTIAL APPLICATIONS
M • S MANKIW SHANNON
SECTION 3: EXISTING PROBLEMS & POTENTIAL APPLICATIONS
SMALL DRAIN CURRENT & LOW GATE CONTROLLABILITY
SECTION 2: NVCT STRUCTURES
GENERALLY, TWO KINDS OF NVCT STRUCTURES ARE REPORTEDLATERAL NVCT AND VERTICAL NVCT
A lateral NVCT consists of a collector that is deployed in the common plane with the source. Whereas the source and collector of a vertical NVCT are out of the plane of the wafer.
M • S MANKIW SHANNON
A. A. G. Driskill-Smith, applied physics letters, 1999.
A
Siwapon Srisonphan, nature nanotechnology, 2012.
B
SECTION 1: EXISTING PROBLEMS & POTENTIAL APPLICATIONS
N V N V C T ANOSCALE ACUUM HANNEL RANSISTOR C T
NVCT OVERVIEW
Introduction
• NVCT was born for the demand of immunity of radiation and with the help of microfabrication process.
Currently, two different structures classified as vertical NVCTs are reported, one is Spindt FET and the other is shown in figure B&C, the latter one is reported to form a 2DES around the channel edge. It is difficult for the vertical structure in figure A to achieve geometrical dimensions such as gap spacing to be identical over all devices on the substrate. Structures in B and C offers various channel length by controlling the thickness of gate layers and oxide layers.
• NVCT is potential to be utilized in aerospace application, albeit still an immature devices for some shortcomings to be eliminated.
M • S MANKIW SHANNON
Siwapon S, nature nanotechnology, 2012
M • S MANKIW SHANNON
Wen-Teng C, IEEE transactions on electron devices, 2019.
SECTION 2: NVCT STRUCTURES
THE VERTICAL NVCTS
SMALL DRAIN CURRENT & LOW GATE CONTROLLABILITY
In order to acquire larger current, NVCT arrays is an option when the area is not a restriction for specific application.
PREFACE - i -
NVC T
Section 1 DEVELOPMENT&PROMISIN G ADVANTAGES
M • S MANKIW SHANNON
SECTION 1: DEVELOPMENT OF NVCT
THE DEVELOPMENT OF NVCT IS CHARACTERIZED BY THE SCALE-DOWN OF THE CHANNEL LENGTH