RTR040N03中文资料

Transistors 1/4
Switching (30V, 4.0A)
RTR040N03
z Features
1) Low On-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (TSMT3).
z Application
Power switching, DC / DC converter.
z Structure
Silicon N-channel MOS FET
z External dimensions (Unit : mm)
z Absolute maximum ratings (T a=25°C)
∗1∗1∗2Parameter
V V DSS Symbol 30V V GSS 12A I D
±4.0A I DP ±16A I S
0.8A I SP 16W P D 1.0°C Tch 150°C
Tstg −55 to +150Limits Unit Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel temperature
Range of Storage temperature
Continuous Pulsed Continuous Pulsed
∗1 Pw ≤10µs, Duty cycle ≤1%∗2 Mounted on a ceramic board
Source current (Body diode)
z Equivalent circuit
z Thermal resistance (T a=25°C)
°C / W
Rth (ch-a)
125
Parameter
Symbol Limits Unit Channel to ambient
Transistors
z Electrical characteristics (T a=25°C)
2/4
Transistors 3/4
z Electrical characteristic curves
0.001
0.01
0.11
10
GATE-SOURCE VOLTAGE : V GS (V)
Fig.1 Typical Transfer Characteristics
D R A I N C U R R
E N T : I D (A
)
S T A T I C D R A I N -S O U R C E O N -S T
A T E R E S I S T A N C E : R D S (o n ) (m Ω)
DRAIN CURRENT : I D (A)Fig.2 Static Drain-Source On-State
Resistance vs. Drain Current S T A T I C D R A I N -S O U R C E O N -S T A T E
R E S I S T A N C E : R D S (o n ) (m Ω)
DRAIN CURRENT : I D (A)
Fig.3 Static Drain-Source On-State
Resistance vs. Drain Current
S T A T I C D R A I N -S O U R C E O N -S T A T E R E S I S T A N C E : R D S (o n ) (m Ω)
DRAIN CURRENT : I D (A)Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current
S T A T I C
D R A I N -S O U R C
E O N -S T A T E R E S I S T A N C E : R D S (o n ) (m Ω)
GATE SOURCE VOLTAGE : V GS (V)Fig.5 Static Drain-Source On-State
Resistance vs. Gate-Source Voletage S T A T I C D R A I N -S O U R C E O N -S T A T E R E S I S T A N C E :
R D S (o n ) (m Ω)
DRAIN CURRENT : I D (A)
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current
S O U R C E C U R R E N T : I S (A )
SOURCE-DRAIN VOLTAGE : V S D (V)Fig.7 Source Current
vs. Source-Drain Voltage 10100
1000
C A P A C I T A N C E : C (p F )
DRAIN SOURCE VOLTAGE : V DS (V)
Fig.8 Typical Capacitance
vs. Drain-Source Voltage
S W I T C H I N G T I M E : t (n s )
DRAIN CURRENT : I D (A)
Fig.9 Switching Characteristics
Transistors 4/4
G A T E -S O U R C E V O L T A G E : V G S (V )
TOTAL GATE CHARGE : Qg (nC)
Fig.10 Dynamic Input Characteristics
z Measurement circuits
Fig.11 Switching Time Test Circuit V DS
Fig.12 Switching Time Waveforms
V GS V DS
Fig.13 Gate Charge Test Circuit
I V DS
Fig.14 Gate Charge Waveform V
Appendix
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export T rade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1。