微电子电路英文版(Adel S.Sedra) 附录E
微电子电路 microelectronic circuit 标准课件 sedra著作
Microelectronic Circuits - Fifth Edition
Sedra/Smith
Copyright 2004 by Oxford University Press, Inc.
17
Figure 13.17 A positive-feedback loop capable of bistable operation.
Microelectronic Circuits - Fifth Edition
Sedra/Smith
Copyright 2004 by Oxford University Press, Inc.
11
Figure 13.11 A practical implementation of the active-filter-tuned oscillator.
Microelectronic Circuits - Fifth Edition
Sedra/Smith
Copyright 2004 by Oxford University Press, Inc.
5
Figure 13.5 A Wien-bridge oscillator with a limiter used for amplitude control.
Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc. 20
Figure 13.20 (a) A bistable circuit derived from the positive-feedback loop of Fig. 13.17 by applying vI through R1. (b) The transfer characteristic of the circuit in (a) is noninverting. (Compare it to the inverting characteristic in Fig. 13.19d.)
国外数电模电经典著作
国外数电模电经典著作国外的数电模电经典著作有很多，下面列举了10本：1.《数字逻辑与计算机设计》（Digital Logic and Computer Design）：这本书是由M. Morris Mano和Charles R. Kime联合撰写的，是数电和计算机设计领域的经典教材之一。
书中详细介绍了数字逻辑的基本原理和计算机的设计方法。
2.《电子工程师的设计指南》（The Art of Electronics）：这本书是由Paul Horowitz和Winfield Hill合著的，是电子工程师必读的经典著作之一。
书中详细介绍了电子电路的设计原理和实践技巧，包括模拟电路和数字电路的设计方法。
3.《微电子电路》（Microelectronic Circuits）：这本书是由Adel S. Sedra和Kenneth C. Smith合著的，是微电子电路领域的经典教材之一。
书中介绍了微电子器件的原理和电路的设计方法，涵盖了模拟电路和数字电路的内容。
4.《模拟电子技术基础》（Foundations of Analog and Digital Electronic Circuits）：这本书是由Anant Agarwal和Jeffrey H. Lang合著的，是模拟电子技术的经典教材之一。
书中系统地介绍了模拟电路和数字电路的基本原理和设计方法。
5.《模拟电子电路设计》（Analog Electronics Design）：这本书是由Chris Toumazou、George S. Moschytz和Barrie Gilbert合著的，是模拟电子电路设计领域的经典著作之一。
书中详细介绍了模拟电路设计的原理和技巧，包括放大器、滤波器和混频器等电路的设计方法。
6.《数字信号处理》（Digital Signal Processing）：这本书是由John G. Proakis和Dimitris G. Manolakis合著的，是数字信号处理领域的经典教材之一。
电子科学与技术专业英语(微电子技术分册)第一章译文
——电材专业英语课文翻译Semiconductor Materials• 1.1 Energy Bands and Carrier Concentration• 1.1.1 Semiconductor Materials•Solid-state materials can be grouped into three classes—insulators(绝缘体）, semiconductors, and conductors. Figure 1-1 shows the electrical conductivities δ(and the corresponding resistivities ρ≡1/δ)associated with(相关）some important materials in each of three classes. Insulators such as fused（熔融）quartz and glass have very low conductivities, in the order of 1E-18 to 1E-8 S/cm;固态材料可分为三种：绝缘体、半导体和导体。
图1－1 给出了在三种材料中一些重要材料相关的电阻值（相应电导率ρ≡1/δ)。
绝缘体如熔融石英和玻璃具有很低电导率，在10-18 到10-8 S/cm;and conductors such as aluminum and silver have high conductivities, typically from 104 to 106 S/cm. Semiconductors have conductivities between those of insulators and those of conductors. The conductivity of a semiconductor is generally sensitive to temperature, illumination（照射）, magnetic field, and minute amount of impurity atoms. This sensitivity in conductivity makes the semiconductor one of the most important materials for electronic applications.导体如铝和银有高的电导率，典型值从104到106S/cm;而半导体具有的电导率介乎于两者之间。
电路基础 国外经典书籍
电路基础国外经典书籍以下是电路基础国外的经典书籍，这些书籍涵盖了电路理论、分析和设计的基础知识：1、《Microelectronic Circuits》 by Adel S. Sedra and KennethC. Smith这是一本经典的微电子电路教材，涵盖了大量的电路基础知识，从基本的电子元件到集成电路的设计都有涉及。
2、《Fundamentals of Electric Circuits》 by Charles K. Alexander and Matthew N. O. Sadiku这本书是关于电路理论和分析的经典教材，强调基本原理和概念。
适合初学者和希望深入理解电路的学生。
3、《Electronic Devices and Circuit Theory》 by Robert L. Boylestad and Louis Nashelsky这本书综合了电子器件和电路理论，是学习电子学和电路设计的一本经典教材。
4、《Introduction to Electric Machines and Drives》 by PaulC. Krause如果你对电机和驱动系统感兴趣，这本书提供了深入的理论和实践知识，涵盖了电机工作原理和控制技术。
5、《Electric Circuits》 by James W. Nilsson and Susan Riedel这本书提供了电路理论和分析的广泛覆盖，强调实际应用和问题解决。
6、《Art of Electronics》 by Paul Horowitz and Winfield Hill虽然更注重实际电子设计，但这本书对于理解电子电路的工作原理和应用也提供了深入的见解。
7、《Circuit Analysis For Dummies》 by John Santiago如果你是初学者，这本书提供了一种简明易懂的方式来理解电路分析的基础概念。
8、《Op Amps for Everyone》 by Ron Mancini这本书专注于运算放大器（Op Amps），对于理解这一基本电路元件在电子设计中的重要性非常有帮助。
微电子电路英文版(Adel S.Sedra) 第1章
Microelectronic Circuits - Fifth Edition
Sedra/Smith
Copyright © 2004 by Oxford University Press, Inc.
13
Figure 1.11 (a) A voltage amplifier fed with a signal vI(t) and connected to a load resistance RL. (b) Transfer characteristic of a linear voltage amplifier with voltage gain Av.
Microelectronic Circuits - Fifth Edition
Sedra/Smith
Copyright © 2004 by Oxford University Press, Inc.
15
Figure 1.13 An amplifier transfer characteristic that is linear except for output saturation.
Copyright © 2004 by Oxford University Press, Inc.
Microelectronic Circuits - Fifth Edition
Sedra/Smith
14
Figure 1.12 An amplifier that requires two dc supplies (shown as batteries) for operation.
Copyright © 2004 by Oxford University Press, Inc.
2024年微电子封装技术课程重点内容(English)
Microelectronics packaging technology(R eview contents)Chapter 1：Introduction1.The development characteristics and trends of microelectronics packaging.2.The functions of microelectronics packaging.3.The levels of microelectronics packaging technology.4.The methods for chip bonding.Chapter 2：Chip interconnection technologyIt is one of the key chapters1.The Three kinds of chip interconnection, and their characteristics and applications.2.The types of wire bonding (WB) technology, their characteristics and working principles.3.The working principle and main process of the wire ball bonding.4.The major materials for wire bonding.5.Tape automated bonding (TAB) technology:1）The characteristic and application of TAB technology.2）The key materials and technologies of TAB technology.3）The internal lead and outer lead welding technology of TAB technology.6. Flip Chip Bonding (FCB) Technology1）The characteristic and application of flip chip bonding technology2）UBM and multilayer metallization under chip bump；UBM’s structure and material, and the roles ofeach layer.3）The main fabrication method of chip bumps.4）FCB technology and its reliability.5）C4 soldering technology and its advantages.6）The role of underfill in FCB.7）The interconnection principles for Isotropic and anisotropic conductive adhesive respectively. Chapter 3: Packaging technology of Through-Hole components1.The classification of Through-Hole components.2.Focused on：DIP packaging technology, including its process flow.3.The characteristics of PGA.Chapter 4：Packaging technology of surface mounted device (SMD)1.The advantages and disadvantages of SMD.2.The types of SMD.3.The main SMD packaging technologies, focused on：SOP、PLCC、LCCC、QFP.4.The packaging process flow of QFP.5.The risk of moisture absorption in plastic packages, the mechanism of the cracking caused by moistureabsorption, and solutions to prevent for such failure.Chapter 5：Packaging technology of BGA and CSP1.The characteristics of BGA and CSP.2.The packaging technology for PBGA，and its process flow.3.The characteristics of packaging technology for CSP.4.The reliability problems of BGA and CSP.Chapter 6：Multi-Chip Module（MCM）1.The classification and characteristics of MCM2. The assembly technology of MCM.Chapter 7：Electronic packaging materials and substrate technology1. The classification of the materials for electronic packaging, the main requirements for packagingmaterials.2. The types of metals in electronic packaging, and their main applications.3. The main requirements for polymer materials in electronic packaging.4.Classification of main substrate materials, and the major requirements for substrate materials.Chapter 8：Microelectronics packaging reliability1.The basic concepts of electronic packaging reliability.2.The basic concepts for failure mode and failure mechanism in electronic packaging.3.Main failure (defect) modes (types) of electronic packaging.4.The purpose and procedure of failure analysis (FA) ；Common FA techniques (such as cross section, dyeand pry, SEM, CSAM ...).5 The purpose and key factors (such as stress level, stress type …) to design accelerated reliability test. Chapter 9：Advanced packaging technologies1.The concept of wafer level packaging (WLP) technology.2.The key processes of WL-CSP.3.The concept and types of the 3D packaging technologies.Specified Subject 1：LED packaging technology1. Describe briefly the four ways to achieve LED white light, and how they are packaged？2. Describe briefly the difference and similar aspects (similarity) between LED packaging andmicroelectronics packaging.3. And also describe briefly the development trend for LED package technology and the whole LED industryrespectively.Specified Subject 2：MEMS packaging technology1.The differences between micro-electro-mechanical system (MEMS) packaging technology and theconventional microelectronics packaging technologies.2.The function requirements of MEMS packaging.Extra requirement:The common used terms (Abbreviation) for electronic packaging.。
数电模电的书
数电模电的书以下是一些推荐的数电模电书籍：1. 《数字系统设计与Verilog HDL》（英文原版：Digital Systems Design with VHDL） - Michael D. Ciletti著该书介绍了数字系统的设计原理和Verilog硬件描述语言（HDL）的使用方法，通过例子和练习帮助读者建立数字电路设计的基础知识。
2. 《数字逻辑与计算机设计》（英文原版：Digital Logic and Computer Design） - M. Morris Mano著此书是一本经典的教材，介绍了数字电路和计算机系统的基本概念和设计原理。
它涵盖了数字逻辑和组合逻辑电路、时序逻辑电路、计算机组成原理等方面。
3. 《模拟电子技术基础》（英文原版：Microelectronic Circuits） - Adel S. Sedra, Kenneth C. Smith著该书是一本广受欢迎的模拟电子技术教材，涵盖了模拟电路的基本概念、放大器设计、运算放大器、滤波器、功率放大器等内容。
它还介绍了CMOS集成电路的原理和设计方法。
4. 《模拟集成电路设计》（英文原版：Analog Integrated Circuit Design） - David A. Johns, Kenneth W. Martin著此书深入介绍了模拟集成电路的设计方法和技术。
它涵盖了放大器设计、参考电流电源、放大器频率响应、运算放大器、数据转换器等内容，并以基于CMOS技术的集成电路为例进行讲解。
5. 《现代数字信号处理》（英文原版：Modern Digital Signal Processing） - Roberto Cristi著该书介绍了数字信号处理（Digital Signal Processing，DSP）的基本原理和常用算法。
它涵盖了离散时间信号和系统、离散傅立叶变换、滤波器设计、谱估计等内容，结合实际应用和MATLAB编程来加深理解。
微电子专业英语词汇
AAbruptjunctio n 突变结Acceler ated testing加速实验Accepto r 受主Accepto r atom 受主原子Accumul ation积累、堆积Accumul atingcontact积累接触Accumul ationregion积累区Accumul ationlayer 积累层Activeregion有源区Activecompone nt 有源元Activedevice有源器件Activat ion 激活Activat ion energy激活能Activeregion有源（放大）区Admitta nce 导纳Allowed band 允带Alloy-junctio n device合金结器件Aluminu m(Alumini um) 铝Aluminu m – oxide 铝氧化物Aluminu m passiva tion 铝钝化Ambipol ar 双极的Ambient tempera ture 环境温度Amorpho us 无定形的，非晶体的Amplifi er 功放扩音器放大器Analogu e(Analog)compara tor 模拟比较器Angstro m 埃Anneal退火Anisotr opic 各向异性的Anode 阳极Arsenic (AS) 砷Auger 俄歇Auger process俄歇过程Avalanc he 雪崩Avalanc he breakdo wn 雪崩击穿Avalanc he excitat ion 雪崩激发Bbrute-force attack强力攻击Backgro und carrier本底载流子Backgro und doping本底掺杂Backwar d 反向Backwar d bias 反向偏置Ballast ing resisto r 整流电阻Ball bond 球形键合Band 能带Band gap 能带间隙Barrier势垒Barrier layer 势垒层Barrier width 势垒宽度Base 基极Base contact基区接触Base stretch ing 基区扩展效应Base transit time 基区渡越时间Base transpo rt efficie ncy 基区输运系数Base-width modulat ion 基区宽度调制Basis vector基矢Bias 偏置Bilater al switch双向开关Binarycode 二进制代码Binarycompoun d semicon ductor二元化合物半导体Bipolar双极性的Bipolar Junctio n Transis tor (BJT)双极晶体管Bloch 布洛赫Blockin g band 阻挡能带Blockin g contact阻挡接触Body - centere d 体心立方Body-centred cubic structu re 体立心结构Boltzma nn 波尔兹曼Bond 键、键合Bonding electro n 价电子Bonding pad 键合点Bootstr ap circuit自举电路Bootstr appedemitter followe r 自举射极跟随器Boron 硼Borosil icateglass 硼硅玻璃Boundar y conditi on 边界条件Bound electro n 束缚电子Breadbo ard 模拟板、实验板Break down 击穿Break over 转折Brillou in 布里渊Brillou in zone 布里渊区Built-in 内建的Build-in electri c field 内建电场Bulk 体/ 体内Bulk absorpt ion 体吸收Bulk generat ion 体产生Bulk recombi nation体复合Burn - in 老化Burn out 烧毁Buriedchannel埋沟Burieddiffusi on region隐埋扩散区CCaesarcipher凯撒加密法capacit ance 电容capturecategor ize 分类chainin g mode 链接模式challen ge 质询cipherfeedbac k 加密反馈collisi on 冲突combine集成compati bility n.[计]兼容性compone nt 原件confide ntiali ty 保密性constra int 约束corresp onding to 相应的Cryptog raphy密码学Can 外壳 Capacit ance 电容Capture cross section俘获截面Capture carrier俘获载流子Carrier载流子、载波Carry bit 进位位Carry-in bit 进位输入Carry-out bit 进位输出Cascade级联Case 管壳Cathode阴极Center中心Ceramic陶瓷（的）Channel沟道Channel breakdo wn 沟道击穿Channel current沟道电流Channel doping沟道掺杂Channel shorten ing 沟道缩短Channel width 沟道宽度Charact eristi c impedan ce 特征阻抗Charge电荷、充电Charge-compens ationeffects电荷补偿效应Chargeconserv ation电荷守恒Chargeneutral ity conditi on 电中性条件Chargedrive/exchang e/sharing/transfe r/st1orage电荷驱动/ 交换/ 共享/ 转移/ 存储Chemmic al etching化学腐蚀法Chemica lly-Polish化学抛光Chemmic ally-Mechani callyPolish(CMP) 化学机械抛光Chip 芯片Chip yield 芯片成品率Clamped箝位Clampin g diode 箝位二极管Cleavag e plane 解理面Clock rate 时钟频率Clock generat or 时钟发生器Clock flip-flop 时钟触发器Close-packedstructu re 密堆积结构Close-loop gain 闭环增益Collect or 集电极Collisi on 碰撞Compens ated OP-AMP 补偿运放Common-base/collect or/emitter connect ion 共基极/ 集电极/ 发射极连接Common-gate/drain/sourceconnect ion 共栅/ 漏/ 源连接Common-mode gain 共模增益Common-mode input 共模输入Common-mode rejecti on ratio (CMRR) 共模抑制比Compati bility兼容性Compens ation补偿Compens ated impurit ies 补偿杂质Compens ated semicon ductor补偿半导体Complem entary Darling ton circuit 互补达林顿电路Complem entaryMetal-Oxide-Semicon ductor Field-Effect-Transis tor(CMOS)互补金属氧化物半导体场效应晶体管Complem entary error functio n 余误差函数Compoun d Semicon ductor化合物半导体Conduct ance 电导Conduct ion band (edge) 导带( 底) Conduct ion level/state 导带态Conduct or 导体Conduct ivity电导率Configu ration组态Conlomb库仑Conpled Configu ration Devices结构组态 Constan ts 物理常数Constan t energysurface等能面Constan t-sourcediffusi on 恒定源扩散Contact接触Contami nation治污Continu ity equatio n 连续性方程Contact hole 接触孔Contact potenti al 接触电势Continu ity conditi on 连续性条件Contradoping反掺杂Control led 受控的Convert er 转换器Conveye r 传输器Copperinterco nnecti on system铜互连系统Couping耦合Covalen t 共阶的Crossov er 跨交Critica l 临界的Crossun der 穿交Crucibl e 坩埚Crystaldefect/face/orienta tion/lattice晶体缺陷/ 晶面/ 晶向/ 晶格Current density电流密度Curvatu re 曲率Cut off 截止Current drift/dirve/sharing电流漂移/ 驱动/ 共享Current Sense 电流取样Curvatu re 弯曲Customintegra ted circuit定制集成电路Cylindr ical 柱面的Czochra lshicr ystal直立单晶Czochra lski techniq ue 切克劳斯基技术（Cz 法直拉晶体J ）Ddedicat e 专用的，单一的denialof service(DOS)拒绝服务攻击diffusi on 扩散digital signatu re algorit hm 数字签名算法dynamic动态的Danglin g bonds 悬挂键Dark current暗电流Dead time 空载时间Debye length德拜长度De.broglie德布洛意Decdera te 减速Decibel (dB) 分贝Decode译码Deep accepto r level 深受主能级Deep donor level 深施主能级Deep impurit y level 深度杂质能级Deep trap 深陷阱Defeat缺陷Degener ate semicon ductor简并半导体 Degener acy 简并度Degrada tion 退化DegreeCelsius(centigr ade)/Kelvin摄氏/ 开氏温度Delay 延迟Density密度Density of states态密度Depleti on 耗尽Depleti on approxi mation耗尽近似Depleti on contact耗尽接触Depleti on depth 耗尽深度Depleti on effect耗尽效应Depleti on layer 耗尽层Depleti on MOS 耗尽MOSDepleti on region耗尽区Deposit ed film 淀积薄膜Deposit ion process淀积工艺Designrules 设计规则Die 芯片（复数dice ）Diode 二极管Dielect ric 介电的Dielect ric isolati on 介质隔离Differe nce-mode input 差模输入Differe ntialamplifi er 差分放大器Differe ntialcapacit ance 微分电容Diffuse d junctio n 扩散结Diffusi on 扩散2Diffusi on coeffic ient 扩散系数Diffusi on constan t 扩散常数Diffusi vity 扩散率Diffusi oncapacit ance/barrier/current/furnace 扩散电容/ 势垒/ 电流/ 炉Digital circuit数字电路Dipoledomain偶极畴Dipolelayer 偶极层Direct-couplin g 直接耦合Direct-gap semicon ductor直接带隙半导体Directtransit ion 直接跃迁Dischar ge 放电Discret e compone nt 分立元件Dissipa tion 耗散Distrib ution分布Distrib uted capacit ance 分布电容istribu ted model 分布模型Displac ement位移Disloca tion 位错Domain畴Donor 施主Donor exhaust ion 施主耗尽Dopant掺杂剂Doped semicon ductor掺杂半导体oping concent ration掺杂浓度Double-diffusi ve MOS(DMOS) 双扩散MOS. Drift 漂移Drift field 漂移电场Drift mobilit y 迁移率Dry etching干法腐蚀Dry/wet oxidati on 干/ 湿法氧化Dose 剂量Duty cycle 工作周期Dual-in-line package（DIP ）双列直插式封装Dynamic s 动态Dynamic charact eristi cs 动态属性Dynamic impedan ce 动态阻抗Eexperti se 专长extract orEarly effect厄利效应Early failure早期失效Effecti ve mass 有效质量Einstei n relatio n(ship) 爱因斯坦关系Electri c Erase Program mableRead Only Memory(E2PROM)一次性电可擦除只读存储器Electro de 电极Electro minggr atim 电迁移Electro n affinit y 电子亲和势Electro nic -grade 电子能Electro n-beam photo-resistexposur e 光致抗蚀剂的电子束曝光Electro n gas 电子气Electro n-grade water 电子级纯水Electro n trappin g center电子俘获中心Electro n V olt (eV) 电子伏Electro static静电的Element元素/ 元件/ 配件Element al semicon ductor元素半导体 Ellipse椭圆Ellipso id 椭球Emitter发射极Emitter-coupled logic 发射极耦合逻辑Emitter-coupled pair 发射极耦合对Emitter followe r 射随器Empty band 空带Emitter crowdin g effect发射极集边（拥挤）效应Enduran ce test =life test 寿命测试Energystate 能态Energymomentu m diagram能量- 动量(E-K) 图Enhance ment mode 增强型模式Enhance ment MOS 增强性MOS Entefic ( 低) 共溶的Environ mental test 环境测试Epitaxi al 外延的Epitaxi al layer 外延层Epitaxi al slice 外延片Expitax y 外延Equival ent curcuit等效电路Equilib rium majorit y /minorit ycarrier s 平衡多数/ 少数载流子Erasabl e Program mableROM(EPROM) 可搽取（编程）存储器Error functio n complem ent 余误差函数Etch 刻蚀Etchant刻蚀剂Etching mask 抗蚀剂掩模Excesscarrier过剩载流子Excitat ion energy激发能Excited state 激发态Exciton激子Extrapo lation外推法Extrins ic 非本征的Extrins ic semicon ductor杂质半导体Ffabrica tion伪造fleshed outFace - centere d 面心立方Fall time 下降时间Fan-in 扇入Fan-out 扇出Fast recover y 快恢复Fast surface states快界面态Feedbac k 反馈Fermi level 费米能级Fermi-Dirac Distrib ution费米-狄拉克布Femi potenti al 费米势Fick equatio n 菲克方程（扩散）Field effecttransis tor 场效应晶体管Field oxide 场氧化层Filledband 满带Film 薄膜Flash memory闪烁存储器Flat band 平带Flat pack 扁平封装Flicker noise 闪烁（变）噪声Flip-flop toggle触发器翻转Floatin g gate 浮栅Fluorid e etch 氟化氢刻蚀Forbidd en band 禁带Forward bias 正向偏置Forward blockin g /conduct ing 正向阻断/ 导通Frequen cy deviati on noise 频率3漂移噪声Frequen cy respons e 频率响应Functio n 函数GgridGain 增益Gallium-Arsenid e(GaAs) 砷化钾Gamy ray r 射线Gate 门、栅、控制极Gate oxide 栅氧化层Gauss （ian ）高斯Gaussia n distrib utionprofile高斯掺杂分布Generat ion-recombi nation产生- 复合Geometr ies 几何尺寸Germani um(Ge) 锗Graded缓变的Graded(gradual) channel缓变沟道Gradedjunctio n 缓变结Grain 晶粒Gradien t 梯度Grown junctio n 生长结Guard ring 保护环Gummel-Poom model 葛谋- 潘模型Gunn - effect狄氏效应Hhandle处理hierarc hical层次Hardene d device辐射加固器件Heat of formati on 形成热Heat sink 散热器、热沉Heavy/light hole band 重/轻空穴带Heavy saturat ion 重掺杂Hell - effect霍尔效应Heteroj unctio n 异质结Heteroj unctio n structu re 异质结结构Heteroj unctio n Bipolar Transis tor （HBT ）异质结双极型晶体High field propert y 高场特性High-perform ance MOS.( H-MOS) 高性能MOS.Hormali zed 归一化Horizon tal epitaxi al reactor卧式外延反应器Hot carrior热载流子Hybridintegra tion 混合集成Iimpleme ntinducta nce 电感initial izatio n vectorIV初始化向量integri ty完整性interce ption截获interru ption中断Image - force 镜象力Impactionizat ion 碰撞电离Impedan ce 阻抗Imperfe ct structu re 不完整结构Implant ationdose 注入剂量Implant ed ion 注入离子Impurit y 杂质Impurit y scatter ing 杂志散射Increme ntal resista nce 电阻增量（微分电阻）In-contact mask 接触式掩模Indiumtin oxide (ITO) 铟锡氧化物 Induced channel感应沟道Infrare d 红外的Injecti on 注入Input offsetvoltage输入失调电压Insulat or 绝缘体Insulat ed Gate FET(IGFET) 绝缘栅FET Integra ted injecti on logic 集成注入逻辑Integra tion 集成、积分Interco nnecti on 互连Interco nnecti on time delay 互连延时Interdi gitate d structu re 交互式结构Interfa ce 界面Interfe rence干涉Interna tional systemof unions国际单位制Interna lly scatter ing 谷间散射Interpo lation内插法Intrins ic 本征的Intrins ic semicon ductor本征半导体 Inverse operati on 反向工作Inversi on 反型Inverte r 倒相器Ion 离子Ion beam 离子束Ion etching离子刻蚀Ion implant ation离子注入Ionizat ion 电离Ionizat ion energy电离能Irradia tion 辐照Isolati on land 隔离岛Isotrop ic 各向同性Jjava appletJava小程序Junctio n FET(JFET) 结型场效应管Junctio n isolati on 结隔离Junctio n spacing结间距Junctio n side-wall 结侧壁Kkey wrappin g 密钥包装LLatch up 闭锁Lateral横向的Lattice晶格Layout版图Latticebinding/cell/constan t/defect/distortion 晶格结合力/ 晶胞/ 晶格/ 晶格常熟/ 晶格缺陷/ 晶格畸变Leakage current（泄）漏电流Level shiftin g 电平移动Life time 寿命lineari ty 线性度Linkedbond 共价键LiquidNitroge n 液氮Liquid－phase epitaxi al growthtechniq ue 液相外延生长技术Lithogr aphy 光刻Light Emittin g Diode(LED) 发光二极管Load line or Variabl e 负载线Locatin g and Wiring布局布线Longitu dinal纵向的Logic swing 逻辑摆幅Lorentz洛沦兹Lumpedmodel 集总模型4Mmasquer ade伪装message digest消息摘要modific ation修改multidr op 多站, 多支路Majorit y carrier多数载流子Mask 掩膜板，光刻板Mask level 掩模序号Mask set 掩模组Mass - actionlaw 质量守恒定律Master-slave D flip-flop 主从 D 触发器Matchin g 匹配Maxwell麦克斯韦Mean free path 平均自由程Meander ed emitter junctio n 梳状发射极结Mean time beforefailure (MTBF) 平均工作时间Megeto- resista nce 磁阻Mesa 台面MESFET-Metal Semicon ductor 金属半导体FETMetalli zation金属化Microel ectron ic techniq ue 微电子技术Microel ectron ics 微电子学Millenindices密勒指数Minorit y carrier少数载流子Misfit失配Mismatc hing 失配Mobileions 可动离子Mobilit y 迁移率Module模块Modulat e 调制Molecul ar crystal分子晶体Monolit hic IC 单片IC MOSFET金属氧化物半导体场效应晶体管Mos. Transis tor(MOST )MOS. 晶体管 Multipl icatio n 倍增Modulat or 调制Multi-chip IC 多芯片ICMulti-chip module(MCM) 多芯片模块Multipl icatio n coeffic ient 倍增因子Nnetwork level attack网络层攻击non-repudia tion 不可抵赖Naked chip 未封装的芯片（裸片）Negativ e feedbac k 负反馈Negativ e resista nce 负阻Nesting套刻Negativ e-tempera ture-coeffic ient负温度系数Noise margin噪声容限Nonequi libriu m 非平衡Nonrola tile 非挥发（易失）性Normall y off/on 常闭/ 开Numeric al analysi s 数值分析Ooptimiz e 使最优化Occupie d band 满带Officie nay 功率Offset偏移、失调On standby待命状态Ohmic contact欧姆接触Open circuit开路Operati ng point 工作点Operati ng bias 工作偏置Operati onal amplifi er (OPAMP)运算放大器Optical photon=photon光子Optical quenchi ng 光猝灭Optical transit ion 光跃迁Optical-coupled isolato r 光耦合隔离器Organic semicon ductor有机半导体Orienta tion 晶向、定向Outline外形Out-of-contact mask 非接触式掩模Outputcharact eristi c 输出特性Outputvoltage swing 输出电压摆幅Overcom pensat ion 过补偿Over-current protect ion 过流保护Over shoot 过冲Over-voltage protect ion 过压保护Overlap交迭Overloa d 过载Oscilla tor 振荡器Oxide 氧化物Oxidati on 氧化Oxide passiva tion 氧化层钝化Pparalle lparasit ic 寄生的partiti on [简明英汉词典]n.分割,划分, 瓜分, 分开, 隔离物vt.区分, 隔开, 分割present ationn.介绍, 陈述, 赠送,表达primiti veprivateprobabl yproceed ingprofoun dpropert ypseudoc ollisi on伪冲突Package封装Pad 压焊点Paramet er 参数Parasit ic effect寄生效应Parasit ic oscilla tion 寄生振荡Passina tion 钝化Passive compone nt 无源元件Passive device无源器件Passive surface钝化界面Parasit ic transis tor 寄生晶体管Peak-point voltage峰点电压Peak voltage峰值电压Permane nt-storage circuit永久存储电路Period周期Periodi c table 周期表Permeab le - base 可渗透基区Phase-lock loop 锁相环Phase drift 相移Phononspectra声子谱Photo conduct ion 光电导Photo diode 光电二极管Photoel ectric cell 光电池Photoel ectric effect光电效应Photoen ic devices光子器件Photoli thogra phic process光刻工艺(photo) resist（光敏）抗腐蚀剂Pin 管脚Pinch off 夹断5Pinning of Fermi level 费米能级的钉扎（效应）Planarprocess平面工艺Planartransis tor 平面晶体管Plasma等离子体Plezoel ec tric effect压电效应Poisson equatio n 泊松方程Point contact点接触Polarit y 极性Polycry stal 多晶Polymer semicon ductor聚合物半导体Poly-silicon多晶硅Potenti al ( 电) 势Potenti al barrier势垒Potenti al well 势阱Power dissipa tion 功耗Power transis tor 功率晶体管Preampl ifier前置放大器Primary flat 主平面Princip al axes 主轴Print-circuit board(PCB) 印制电路板Probabi lity 几率Probe 探针Process工艺Propaga tion delay 传输延时Pseudop otenti al method膺势发Punch through穿通Pulse trigger ing/modulat ing 脉冲触发/ 调制Pulse Widen Modulat or(PWM) 脉冲宽度调制Punchth rough穿通Push-pull stage 推挽级QQuality factor品质因子Quantiz ation量子化Quantum量子Quantum efficie ncy 量子效应Quantum mechani cs 量子力学Quasi –Fermi －level 准费米能级Quartz石英Rrelease of message content s发布消息内容registe r 寄存器registr ation注册, 报到, 登记resista nce 电阻routingrunning key cipher运动密钥加密法Radiati on conduct ivity辐射电导率Radiati on damage辐射损伤Radiati on flux density辐射通量密度Radiati on hardeni ng 辐射加固Radiati on protect ion 辐射保护Radiati ve - recombi nation辐照复合Radioac tive 放射性Reach through穿通Reactiv e sputter ing source反应溅射源Read diode 里德二极管Recombi nation复合Recover y diode 恢复二极管Recipro cal lattice倒核子Recover y time 恢复时间Rectifi er 整流器（管）Rectify ing contact整流接触Referen ce 基准点基准参考点Refract ive index 折射率Registe r 寄存器Registr ation对准Regulat e 控制调整Relaxat ion lifetim e 驰豫时间Reliabi lity 可*性Resonan ce 谐振Resista nce 电阻Resisto r 电阻器Resisti vity 电阻率Regulat or 稳压管（器）Relaxat ion 驰豫Resonan t frequen cy 共射频率Respons e time 响应时间Reverse反向的Reverse bias 反向偏置Sscratchscratch pad缓存secret密钥substra te 衬底synchro nizesynthes izesymmetr ic key cryptog raphy对称密钥加密sophist icate复杂的suspend悬挂，延缓Samplin g circuit取样电路Sapphir e 蓝宝石（Al2O3 ）Satelli te valley卫星谷Saturat ed current range 电流饱和区Saturat ion region饱和区Saturat ion 饱和的Scaleddown 按比例缩小Scatter ing 散射Schockl ey diode 肖克莱二极管Schottk y 肖特基Schottk y barrier肖特基势垒Schottk y contact肖特基接触Schrodi ngen 薛定厄Scribin g grid 划片格Seconda ry flat 次平面Seed crystal籽晶Segrega tion 分凝Selecti vity 选择性Self aligned自对准的Self diffusi on 自扩散Semicon ductor半导体Semicon ductor-control led rectifi er可控硅Sendsit ivity灵敏度Serial串行/ 串联Seriesinducta nce 串联电感Settletime 建立时间Sheet resista nce 薄层电阻Shield屏蔽Short circuit短路Shot noise 散粒噪声Shunt 分流Sidewal l capacit ance 边墙电容Signal信号Silicaglass 石英玻璃Silicon硅Silicon carbide碳化硅Silicon dioxide (SiO2) 二氧化硅Silicon Nitride(Si3N4) 氮化硅Silicon On Insulat or 绝缘硅Siliver whisker s 银须Simplecubic 简立方6Singlecrystal单晶Sink 沉Skin effect趋肤效应Snap time 急变时间Sneak path 潜行通路Sulethr eshold亚阈的Solar battery/cell 太阳能电池Solid circuit固体电路Solid Solubil ity 固溶度Sonband子带Source源极Sourcefollowe r 源随器Space charge空间电荷Specifi c heat(PT) 热Speed-power product速度功耗乘积Spheric al 球面的Spin 自旋Split 分裂Spontan eous emissio n 自发发射Spreadi ng resista nce 扩展电阻Sputter溅射Stackin g fault 层错Staticcharact eristi c 静态特性Stimula ted emissio n 受激发射Stimula ted recombi nation受激复合Storage time 存储时间Stress应力Straggl e 偏差Sublima tion 升华Substra te 衬底Substit utiona l 替位式的Superla ttice超晶格Supply电源Surface表面Surge capacit y 浪涌能力Subscri pt 下标Switchi ng time 开关时间Switch开关Ttoken 令牌trace 追溯traffic analysi s 分析通信量Trojanhorse 特洛伊木马Tailing扩展Termina l 终端Tensor张量Tensori al 张量的Thermal activat ion 热激发Thermal conduct ivity热导率Thermal equilib rium 热平衡Thermal Oxidati on 热氧化Thermal resista nce 热阻Thermal sink 热沉Thermal velocit y 热运动Thermoe lectri cpovoe r 温差电动势率Thick-film techniq ue 厚膜技术Thin-film hybridIC 薄膜混合集成电路Thin-Film Transis tor(TFT) 薄膜晶体 Threshl od 阈值Thyisto r 晶闸管Transco nducta nce 跨导Transfe r charact eristi c 转移特性Transfe r electro n 转移电子Transfe r functio n 传输函数Transie nt 瞬态的Transis tor aging(stress)晶体管老化Transit time 渡越时间Transit ion 跃迁Transit ion-metal silica过度金属硅化物Transit ion probabi lity 跃迁几率Transit ion region过渡区Transpo rt 输运Transve rse 横向的Trap 陷阱Trappin g 俘获Trapped charge陷阱电荷Triangl e generat or 三角波发生器Triboel ectric ity 摩擦电Trigger触发Trim 调配调整Triplediffusi on 三重扩散Truth table 真值表Tolerah ce 容差Tunnel(ing) 隧道（穿）Tunnelcurrent隧道电流Turn over 转折Turn - off time 关断时间UUltravi olet 紫外的Unijunc tion 单结的Unipola r 单极的Unit cell 原（元）胞Unity-gain frequen cy 单位增益频率Unilate ral-switch单向开关Vvarietyvectorverify检验victoryvertica lvia 通孔virus病毒Vacancy空位Vacuum真空Valence(value) band 价带V alue band edge 价带顶Valence bond 价键Vapourphase 汽相Varacto r 变容管Varisto r 变阻器Vibrati on 振动Voltage电压WWorm 蠕虫Wafer 晶片Wave equatio n 波动方程Wave guide 波导Wave number波数Wave-particl e duality波粒二相性Wear-out 烧毁Wire routing布线Work functio n 功函数Worst-case device最坏情况器件YYield 成品率ZZener breakdo wn 齐纳击穿Zone melting区熔法7。
微电子英语
微电子学英语English words of Microelectronics微电子学专业词汇Abe absorb in 集中精力做某事access control list 访问控制表active attack 主动攻击activeX control ActiveX控件advanced encryption standard AES,高级加密标准algorithm 算法alteration of message 改变消息application level attack 应用层攻击argument 变量asymmetric key cryptography 非对称密钥加密attribute certificate属性证书authentication 鉴别authority 机构availability 可用性Abrupt junction 突变结Accelerated testing 加速实验Acceptor 受主Acceptor atom 受主原子Accumulation 积累、堆积Accumulating contact 积累接触Accumulation region 积累区Accumulation layer 积累层Active region 有源区Active component 有源元Active device 有源器件Activation 激活Activation energy 激活能Active region 有源（放大）区Admittance 导纳Allowed band 允带Alloy-junction device 合金结器件Aluminum(Aluminium) 铝Aluminum – oxide 铝氧化物Aluminum passivation 铝钝化Ambipolar 双极的Ambient temperature 环境温度Amorphous 无定形的，非晶体的Amplifier 功放扩音器放大器Analogue(Analog) comparator 模拟比较器Angstrom 埃Anneal 退火Anisotropic 各向异性的Anode 阳极Arsenic (AS) 砷Auger 俄歇Auger process 俄歇过程Avalanche 雪崩Avalanche breakdown 雪崩击穿Avalanche excitation 雪崩激发Bbrute-force attack 强力攻击Background carrier 本底载流子Background doping 本底掺杂Backward 反向Backward bias 反向偏置Ballasting resistor 整流电阻Ball bond 球形键合Band 能带Band gap 能带间隙Barrier 势垒Barrier layer 势垒层Barrier width 势垒宽度Base 基极Base contact 基区接触Base stretching 基区扩展效应Base transit time 基区渡越时间Base transport efficiency 基区输运系数Base-width modulation 基区宽度调制Basis vector 基矢Bias 偏置Bilateral switch 双向开关Binary code 二进制代码Binary compound semiconductor 二元化合物半导体Bipolar 双极性的Bipolar Junction Transistor (BJT) 双极晶体管Bloch 布洛赫Blocking band 阻挡能带Blocking contact 阻挡接触Body - centered 体心立方Body-centred cubic structure 体立心结构Boltzmann 波尔兹曼Bond 键、键合Bonding electron 价电子Bonding pad 键合点Bootstrap circuit 自举电路Bootstrapped emitter follower 自举射极跟随器Boron 硼Borosilicate glass 硼硅玻璃Boundary condition 边界条件Bound electron 束缚电子Breadboard 模拟板、实验板Break down 击穿Break over 转折Brillouin 布里渊Brillouin zone 布里渊区Built-in 内建的Build-in electric field 内建电场Bulk 体/ 体内Bulk absorption 体吸收Bulk generation 体产生Bulk recombination 体复合Burn - in 老化Burn out 烧毁Buried channel 埋沟Buried diffusion region 隐埋扩散区CCaesar cipher 凯撒加密法capacitance 电容capturecategorize 分类chaining mode 链接模式challenge 质询cipher feedback 加密反馈collision 冲突combine 集成compatibility n.[计]兼容性component 原件confidentiality 保密性constraint 约束corresponding to 相应的Cryptography 密码学Can 外壳Capacitance 电容Capture cross section 俘获截面Capture carrier 俘获载流子Carrier 载流子、载波Carry bit 进位位Carry-in bit 进位输入Carry-out bit 进位输出Cascade 级联Case 管壳Cathode 阴极Center 中心Ceramic 陶瓷（的）Channel 沟道Channel breakdown 沟道击穿Channel current 沟道电流Channel doping 沟道掺杂Channel shortening 沟道缩短Channel width 沟道宽度Characteristic impedance 特征阻抗Charge 电荷、充电Charge-compensation effects 电荷补偿效应Charge conservation 电荷守恒Charge neutrality condition 电中性条件Chargedrive/exchange/sharing/transfer/storage 电荷驱动/ 交换/ 共享/ 转移/ 存储Chemmical etching 化学腐蚀法Chemically-Polish 化学抛光Chemmically-Mechanically Polish (CMP) 化学机械抛光Chip 芯片Chip yield 芯片成品率Clamped 箝位Clamping diode 箝位二极管Cleavage plane 解理面Clock rate 时钟频率Clock generator 时钟发生器Clock flip-flop 时钟触发器Close-packed structure 密堆积结构Close-loop gain 闭环增益Collector 集电极Collision 碰撞Compensated OP-AMP 补偿运放Common-base/collector/emitter connection 共基极/ 集电极/ 发射极连接Common-gate/drain/source connection 共栅/ 漏/ 源连接Common-mode gain 共模增益Common-mode input 共模输入Common-mode rejection ratio (CMRR) 共模抑制比Compatibility 兼容性Compensation 补偿Compensated impurities 补偿杂质Compensated semiconductor 补偿半导体Complementary Darlington circuit 互补达林顿电路ComplementaryMetal-Oxide-SemiconductorField-Effect-Transistor(CMOS)互补金属氧化物半导体场效应晶体管Complementary error function 余误差函数Compound Semiconductor 化合物半导体Conductance 电导Conduction band (edge) 导带( 底) Conduction level/state 导带态Conductor 导体Conductivity 电导率Configuration 组态Conlomb 库仑Conpled Configuration Devices 结构组态Constants 物理常数Constant energy surface 等能面Constant-source diffusion 恒定源扩散Contact 接触Contamination 治污Continuity equation 连续性方程Contact hole 接触孔Contact potential 接触电势Continuity condition 连续性条件Contra doping 反掺杂Controlled 受控的Converter 转换器Conveyer 传输器Copper interconnection system 铜互连系统Couping 耦合Covalent 共阶的Crossover 跨交Critical 临界的Crossunder 穿交Crucible 坩埚Crystal defect/face/orientation/lattice 晶体缺陷/ 晶面/ 晶向/ 晶格Current density 电流密度Curvature 曲率Cut off 截止Current drift/dirve/sharing 电流漂移/ 驱动/ 共享Current Sense 电流取样Curvature 弯曲Custom integrated circuit 定制集成电路Cylindrical 柱面的Czochralshicrystal 直立单晶Czochralski technique 切克劳斯基技术（Cz 法直拉晶体J ）Ddedicate 专用的，单一的denial of service(DOS)拒绝服务攻击diffusion 扩散digital signature algorithm 数字签名算法dynamic 动态的Dangling bonds 悬挂键Dark current 暗电流Dead time 空载时间Debye length 德拜长度De.broglie 德布洛意Decderate 减速Decibel (dB) 分贝Decode 译码Deep acceptor level 深受主能级Deep donor level 深施主能级Deep impurity level 深度杂质能级Deep trap 深陷阱Defeat 缺陷Degenerate semiconductor 简并半导体Degeneracy 简并度Degradation 退化Degree Celsius(centigrade) /Kelvin 摄氏/ 开氏温度Delay 延迟Density 密度Density of states 态密度Depletion 耗尽Depletion approximation 耗尽近似Depletion contact 耗尽接触Depletion depth 耗尽深度Depletion effect 耗尽效应Depletion layer 耗尽层Depletion MOS 耗尽MOSDepletion region 耗尽区Deposited film 淀积薄膜Deposition process 淀积工艺Design rules 设计规则Die 芯片（复数dice ）Diode 二极管Dielectric 介电的Dielectric isolation 介质隔离Difference-mode input 差模输入Differential amplifier 差分放大器Differential capacitance 微分电容Diffused junction 扩散结Diffusion 扩散Diffusion coefficient 扩散系数Diffusion constant 扩散常数Diffusivity 扩散率Diffusioncapacitance/barrier/current/furnace 扩散电容/ 势垒/ 电流/ 炉Digital circuit 数字电路Dipole domain 偶极畴Dipole layer 偶极层Direct-coupling 直接耦合Direct-gap semiconductor 直接带隙半导体Direct transition 直接跃迁Discharge 放电Discrete component 分立元件Dissipation 耗散Distribution 分布Distributed capacitance 分布电容istributed model 分布模型Displacement 位移Dislocation 位错Domain 畴Donor 施主Donor exhaustion 施主耗尽Dopant 掺杂剂Doped semiconductor 掺杂半导体oping concentration 掺杂浓度Double-diffusive MOS(DMOS) 双扩散MOS. Drift 漂移Drift field 漂移电场Drift mobility 迁移率Dry etching 干法腐蚀Dry/wet oxidation 干/ 湿法氧化Dose 剂量Duty cycle 工作周期Dual-in-line package （DIP ）双列直插式封装Dynamics 动态Dynamic characteristics 动态属性Dynamic impedance 动态阻抗Eexpertise 专长extractorEarly effect 厄利效应Early failure 早期失效Effective mass 有效质量Einstein relation(ship) 爱因斯坦关系Electric Erase Programmable Read Only Memory(E2PROM) 一次性电可擦除只读存储器Electrode 电极Electrominggratim 电迁移Electron affinity 电子亲和势Electronic -grade 电子能Electron-beam photo-resist exposure 光致抗蚀剂的电子束曝光Electron gas 电子气Electron-grade water 电子级纯水Electron trapping center 电子俘获中心Electron Volt (eV) 电子伏Electrostatic 静电的Element 元素/ 元件/ 配件Elemental semiconductor 元素半导体Ellipse 椭圆Ellipsoid 椭球Emitter 发射极Emitter-coupled logic 发射极耦合逻辑Emitter-coupled pair 发射极耦合对Emitter follower 射随器Empty band 空带Emitter crowding effect 发射极集边（拥挤）效应Endurance test =life test 寿命测试Energy state 能态Energy momentum diagram 能量- 动量(E-K) 图Enhancement mode 增强型模式Enhancement MOS 增强性MOS Entefic ( 低) 共溶的Environmental test 环境测试Epitaxial 外延的Epitaxial layer 外延层Epitaxial slice 外延片Expitaxy 外延Equivalent curcuit 等效电路Equilibrium majority /minority carriers 平衡多数/ 少数载流子Erasable Programmable ROM (EPROM) 可搽取（编程）存储器Error function complement 余误差函数Etch 刻蚀Etchant 刻蚀剂Etching mask 抗蚀剂掩模Excess carrier 过剩载流子Excitation energy 激发能Excited state 激发态Exciton 激子Extrapolation 外推法Extrinsic 非本征的Extrinsic semiconductor 杂质半导体Ffabrication伪造fleshed outFace - centered 面心立方Fall time 下降时间Fan-in 扇入Fan-out 扇出Fast recovery 快恢复Fast surface states 快界面态Feedback 反馈Fermi level 费米能级Fermi-Dirac Distribution 费米- 狄拉克布Femi potential 费米势Fick equation 菲克方程（扩散）Field effect transistor 场效应晶体管Field oxide 场氧化层Filled band 满带Film 薄膜Flash memory 闪烁存储器Flat band 平带Flat pack 扁平封装Flicker noise 闪烁（变）噪声Flip-flop toggle 触发器翻转Floating gate 浮栅Fluoride etch 氟化氢刻蚀Forbidden band 禁带Forward bias 正向偏置Forward blocking /conducting 正向阻断/ 导通Frequency deviation noise 频率漂移噪声Frequency response 频率响应Function 函数GgridGain 增益Gallium-Arsenide(GaAs) 砷化钾Gamy ray r 射线Gate 门、栅、控制极Gate oxide 栅氧化层Gauss （ian ）高斯Gaussian distribution profile 高斯掺杂分布Generation-recombination 产生- 复合Geometries 几何尺寸Germanium(Ge) 锗Graded 缓变的Graded (gradual) channel 缓变沟道Graded junction 缓变结Grain 晶粒Gradient 梯度Grown junction 生长结Guard ring 保护环Gummel-Poom model 葛谋- 潘模型Gunn - effect 狄氏效应Hhandle 处理hierarchical 层次Hardened device 辐射加固器件Heat of formation 形成热Heat sink 散热器、热沉Heavy/light hole band 重/轻空穴带Heavy saturation 重掺杂Hell - effect 霍尔效应Heterojunction 异质结Heterojunction structure 异质结结构Heterojunction Bipolar Transistor （HBT ）异质结双极型晶体High field property 高场特性High-performance MOS.( H-MOS) 高性能MOS.Hormalized 归一化Horizontal epitaxial reactor 卧式外延反应器Hot carrior 热载流子Hybrid integration 混合集成Iimplementinductance 电感initialization vector IV初始化向量integrity完整性interception 截获interruption中断Image - force 镜象力Impact ionization 碰撞电离Impedance 阻抗Imperfect structure 不完整结构Implantation dose 注入剂量Implanted ion 注入离子Impurity 杂质Impurity scattering 杂志散射Incremental resistance 电阻增量（微分电阻）In-contact mask 接触式掩模Indium tin oxide (ITO) 铟锡氧化物Induced channel 感应沟道Infrared 红外的Injection 注入Input offset voltage 输入失调电压Insulator 绝缘体Insulated Gate FET(IGFET) 绝缘栅FET Integrated injection logic 集成注入逻辑Integration 集成、积分Interconnection 互连Interconnection time delay 互连延时Interdigitated structure 交互式结构Interface 界面Interference 干涉International system of unions 国际单位制Internally scattering 谷间散射Interpolation 内插法Intrinsic 本征的Intrinsic semiconductor 本征半导体Inverse operation 反向工作Inversion 反型Inverter 倒相器Ion 离子Ion beam 离子束Ion etching 离子刻蚀Ion implantation 离子注入Ionization 电离Ionization energy 电离能Irradiation 辐照Isolation land 隔离岛Isotropic 各向同性Jjava applet Java小程序Junction FET(JFET) 结型场效应管Junction isolation 结隔离Junction spacing 结间距Junction side-wall 结侧壁Kkey wrapping 密钥包装LLatch up 闭锁Lateral 横向的Lattice 晶格Layout 版图Latticebinding/cell/constant/defect/distortion 晶格结合力/ 晶胞/ 晶格/ 晶格常熟/ 晶格缺陷/ 晶格畸变Leakage current （泄）漏电流Level shifting 电平移动Life time 寿命linearity 线性度Linked bond 共价键Liquid Nitrogen 液氮Liquid －phase epitaxial growth technique 液相外延生长技术Lithography 光刻Light Emitting Diode(LED) 发光二极管Load line or Variable 负载线Locating and Wiring 布局布线Longitudinal 纵向的Logic swing 逻辑摆幅Lorentz 洛沦兹Lumped model 集总模型Mmasquerade伪装message digest 消息摘要modification 修改multidrop 多站, 多支路Majority carrier 多数载流子Mask 掩膜板，光刻板Mask level 掩模序号Mask set 掩模组Mass - action law 质量守恒定律Master-slave D flip-flop 主从 D 触发器Matching 匹配Maxwell 麦克斯韦Mean free path 平均自由程Meandered emitter junction 梳状发射极结Mean time before failure (MTBF) 平均工作时间Megeto - resistance 磁阻Mesa 台面MESFET-Metal Semiconductor 金属半导体FETMetallization 金属化Microelectronic technique 微电子技术Microelectronics 微电子学Millen indices 密勒指数Minority carrier 少数载流子Misfit 失配Mismatching 失配Mobile ions 可动离子Mobility 迁移率Module 模块Modulate 调制Molecular crystal 分子晶体Monolithic IC 单片ICMOSFET 金属氧化物半导体场效应晶体管Mos. Transistor(MOST )MOS. 晶体管Multiplication 倍增Modulator 调制Multi-chip IC 多芯片ICMulti-chip module(MCM) 多芯片模块Multiplication coefficient 倍增因子Nnetwork level attack网络层攻击non-repudiation 不可抵赖Naked chip 未封装的芯片（裸片）Negative feedback 负反馈Negative resistance 负阻Nesting 套刻Negative-temperature-coefficient 负温度系数Noise margin 噪声容限Nonequilibrium 非平衡Nonrolatile 非挥发（易失）性Normally off/on 常闭/ 开Numerical analysis 数值分析Ooptimize 使最优化Occupied band 满带Officienay 功率Offset 偏移、失调On standby 待命状态Ohmic contact 欧姆接触Open circuit 开路Operating point 工作点Operating bias 工作偏置Operational amplifier (OPAMP) 运算放大器Optical photon =photon 光子Optical quenching 光猝灭Optical transition 光跃迁Optical-coupled isolator 光耦合隔离器Organic semiconductor 有机半导体Orientation 晶向、定向Outline 外形Out-of-contact mask 非接触式掩模Output characteristic 输出特性Output voltage swing 输出电压摆幅Overcompensation 过补偿Over-current protection 过流保护Over shoot 过冲Over-voltage protection 过压保护Overlap 交迭Overload 过载Oscillator 振荡器Oxide 氧化物Oxidation 氧化Oxide passivation 氧化层钝化Pparallelparasitic 寄生的partition [简明英汉词典]n.分割, 划分, 瓜分, 分开, 隔离物vt.区分, 隔开, 分割presentation n.介绍, 陈述, 赠送, 表达primitiveprivateprobablyproceedingprofoundpropertypseudocollision伪冲突Package 封装Pad 压焊点Parameter 参数Parasitic effect 寄生效应Parasitic oscillation 寄生振荡Passination 钝化Passive component 无源元件Passive device 无源器件Passive surface 钝化界面Parasitic transistor 寄生晶体管Peak-point voltage 峰点电压Peak voltage 峰值电压Permanent-storage circuit 永久存储电路Period 周期Periodic table 周期表Permeable - base 可渗透基区Phase-lock loop 锁相环Phase drift 相移Phonon spectra 声子谱Photo conduction 光电导Photo diode 光电二极管Photoelectric cell 光电池Photoelectric effect 光电效应Photoenic devices 光子器件Photolithographic process 光刻工艺(photo) resist （光敏）抗腐蚀剂Pin 管脚Pinch off 夹断Pinning of Fermi level 费米能级的钉扎（效应）Planar process 平面工艺Planar transistor 平面晶体管Plasma 等离子体Plezoelectric effect 压电效应Poisson equation 泊松方程Point contact 点接触Polarity 极性Polycrystal 多晶Polymer semiconductor 聚合物半导体Poly-silicon 多晶硅Potential ( 电) 势Potential barrier 势垒Potential well 势阱Power dissipation 功耗Power transistor 功率晶体管Preamplifier 前置放大器Primary flat 主平面Principal axes 主轴Print-circuit board(PCB) 印制电路板Probability 几率Probe 探针Process 工艺Propagation delay 传输延时Pseudopotential method 膺势发Punch through 穿通Pulse triggering/modulating 脉冲触发/ 调制Pulse Widen Modulator(PWM) 脉冲宽度调制Punchthrough 穿通Push-pull stage 推挽级QQuality factor 品质因子Quantization 量子化Quantum 量子Quantum confinement effect 量子局限效应Quantum efficiency 量子效应Quantum mechanics 量子力学Quasi – Fermi －level 准费米能级Quartz 石英Rrelease of message contents发布消息内容register 寄存器registration 注册, 报到, 登记resistance 电阻routingrunning key cipher 运动密钥加密法Radiation conductivity 辐射电导率Radiation damage 辐射损伤Radiation flux density 辐射通量密度Radiation hardening 辐射加固Radiation protection 辐射保护Radiative - recombination 辐照复合Radioactive 放射性Reach through 穿通Reactive sputtering source 反应溅射源Read diode 里德二极管Recombination 复合Recovery diode 恢复二极管Reciprocal lattice 倒核子Recovery time 恢复时间Rectifier 整流器（管）Rectifying contact 整流接触Reference 基准点基准参考点Refractive index 折射率Register 寄存器Registration 对准Regulate 控制调整Relaxation lifetime 驰豫时间Reliability 可*性Resonance 谐振Resistance 电阻Resistor 电阻器Resistivity 电阻率Regulator 稳压管（器）Relaxation 驰豫Resonant frequency 共射频率Response time 响应时间Reverse 反向的Reverse bias 反向偏置Sscratchscratchpad缓存secret 密钥substrate 衬底synchronize synthesizesymmetric key cryptography 对称密钥加密sophisticate 复杂的suspend 悬挂，延缓Sampling circuit 取样电路Sapphire 蓝宝石（Al2O3 ）Satellite valley 卫星谷Saturated current range 电流饱和区Saturation region 饱和区Saturation 饱和的Scaled down 按比例缩小Scattering 散射Schockley diode 肖克莱二极管Schottky 肖特基Schottky barrier 肖特基势垒Schottky contact 肖特基接触Schrodingen 薛定厄Scribing grid 划片格Secondary flat 次平面Seed crystal 籽晶Segregation 分凝Selectivity 选择性Self aligned 自对准的Self diffusion 自扩散Semiconductor 半导体Semiconductor-controlled rectifier 可控硅Sendsitivity 灵敏度Serial 串行/ 串联Series inductance 串联电感Settle time 建立时间Sheet resistance 薄层电阻Shield 屏蔽Short circuit 短路Shot noise 散粒噪声Shunt 分流Sidewall capacitance 边墙电容Signal 信号Silica glass 石英玻璃Silicon 硅Silicon carbide 碳化硅Silicon dioxide (SiO2) 二氧化硅Silicon Nitride(Si3N4) 氮化硅Silicon On Insulator 绝缘硅Siliver whiskers 银须Simple cubic 简立方Single crystal 单晶Sink 沉Skin effect 趋肤效应Snap time 急变时间Sneak path 潜行通路Sulethreshold 亚阈的Solar battery/cell 太阳能电池Solid circuit 固体电路Solid Solubility 固溶度Sonband 子带Source 源极Source follower 源随器Space charge 空间电荷Specific heat(PT) 热Speed-power product 速度功耗乘积Spherical 球面的Spin 自旋Split 分裂Spontaneous emission 自发发射Spreading resistance 扩展电阻Sputter 溅射Stacking fault 层错Static characteristic 静态特性Stimulated emission 受激发射Stimulated recombination 受激复合Storage time 存储时间Stress 应力Straggle 偏差Sublimation 升华Substrate 衬底Substitutional 替位式的Superlattice 超晶格Supply 电源Surface 表面Surge capacity 浪涌能力Subscript 下标Switching time 开关时间Switch 开关Ttoken 令牌trace 追溯traffic analysis 分析通信量Trojan horse 特洛伊木马Tailing 扩展Terminal 终端Tensor 张量Tensorial 张量的Thermal activation 热激发Thermal conductivity 热导率Thermal equilibrium 热平衡Thermal Oxidation 热氧化Thermal resistance 热阻Thermal sink 热沉Thermal velocity 热运动Thermoelectricpovoer 温差电动势率Thick-film technique 厚膜技术Thin-film hybrid IC 薄膜混合集成电路Thin-Film Transistor(TFT) 薄膜晶体Threshlod 阈值Thyistor 晶闸管Transconductance 跨导Transfer characteristic 转移特性Transfer electron 转移电子Transfer function 传输函数Transient 瞬态的Transistor aging(stress) 晶体管老化Transit time 渡越时间Transition 跃迁Transition-metal silica 过度金属硅化物Transition probability 跃迁几率Transition region 过渡区Transport 输运Transverse 横向的Trap 陷阱Trapping 俘获Trapped charge 陷阱电荷Triangle generator 三角波发生器Triboelectricity 摩擦电Trigger 触发Trim 调配调整Triple diffusion 三重扩散Truth table 真值表Tolerahce 容差Tunnel(ing) 隧道（穿）Tunnel current 隧道电流Turn over 转折Turn - off time 关断时间UUltraviolet 紫外的Unijunction 单结的Unipolar 单极的Unit cell 原（元）胞Unity-gain frequency 单位增益频率Unilateral-switch 单向开关Vvarietyvectorverify 检验victoryverticalvia 通孔virus病毒Vacancy 空位Vacuum 真空Valence(value) band 价带Value band edge 价带顶Valence bond 价键Vapour phase 汽相Varactor 变容管Varistor 变阻器Vibration 振动Voltage 电压WWorm 蠕虫Wafer 晶片Wave equation 波动方程Wave guide 波导Wave number 波数Wave-particle duality 波粒二相性Wear-out 烧毁Wire routing 布线Work function 功函数Worst-case device 最坏情况器件XxYYield 成品率ZZener breakdown 齐纳击穿Zone melting 区熔法。
微电子电路英文版(Adel S.Sedra) 第3章
Figure 3.6 Circuits for Example 3.2.
Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright © 2004 by Oxford University Press, Inc. 9
Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright © 2004 by Oxford University Press, Inc. 27
Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright © 2004 by Oxford University Press, Inc. 7
Figure 3.5 Diode logic gates: (a) OR gate; (b) AND gate (in a positive-logic system).
Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright © 2004 by Oxford University Press, Inc. 2
Figure 3.2 The two modes of operation of ideal diodes and the use of an external circuit to limit the forward current (a) and the reverse voltage (b).
微电子电路microelectroniccircuit标准课件sedra著作共56页
Copyright 2004 by Oxford University Press, Inc.
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Figure 14.3 Transfer characteristic of the emitter follower in Fig. 14.2. This linear characteristic is obtained by neglecting the change in vBE1 with iL. The maximum positive output is determined by the saturation of Q1. In the negative direction, the limit of the linear region is determined either by Q1 turning off or by Q2 saturating, depending on the values of I and RL.
Microelectronic Circuits - Fifth Edition Sedra/Smith
Copyright 2004 by Oxford University Press, Inc.
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Figure 14.8 Power dissipation of the class B output stage versus amplitude of the output sinusoid.
Microelectronic Circuits - Fifth Edition Sedra/Smith
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Figure 14.5 A class B output stage.
Orcad-PSpice_Introduction
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Step 6:放置电源元件 :
PSpice 模拟用的电压源与电流源元件,被视为一般电路 模拟用的电压源与电流源元件, 元件. 元件.大部分的 PSpice 电源元件都在 Source.olb 元件 库内
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Step 7:放置接地元件 :
点选 Place\Ground…功能选项或按触绘图工具列上的 功能选项或按触绘图工具列上的 钮或快速键 Shift + G,叫出 Place Ground 对话盒 ,
OrCAD PSpice 简介
TEXT BOOK
Adel S. Sedra, Kenneth C. Smith, "MICROELECTRONIC CIRCUITS", FIFTH EDITION, Oxford University Press, Inc., 2004 郑光钦, 郑光钦," 电路程式 OrCAD PSpice 9.X ",初版, ,初版, 全威图书有限公司, 全威图书有限公司,民92 OrCAD PSpice User's Guide
W.C. Chi
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专案管理பைடு நூலகம்式画面
Design Resources
.dsn 档案夹 存放绘图页档案夹. 存放绘图页档案夹. Library 档案夹 附加在本专案内供设计档案使 用的元件库档案. 用的元件库档案.
Outputs
电路图后续处理所产生的输出档案
PSpice Resources
纪录一些操作 PSpice 时所需要连 接到的档案
A B C D E F G H I J K L M
A:放大显示 : B: B:缩小显示 C:显示区域内所有物件 : D:显示整个文件 : E:重编序号 : F:反向重编 : G:执行 DRC 操作 :
微电子电路microelectroniccircuit标准课件sedra著作共56页PPT资料
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Figure 14.11 Class AB output stage. A bias voltage VBB is applied between the bases of QN and QP, giving rise to a bias current IQ given by Eq. (14.23). Thus, for small vI, both transistors conduct and crossover distortion is almost completely eliminated.
2
Figure 14.2 An emitter follower (Q1) biased with a constant current I supplied by transistor Q2.
Microelectronic Circuits - Fifth Edition Sedra/Smith
Copyright 2004 by Oxford University Press, Inc.
6
Figure 14.6 Transfer characteristic for the class B output stage in Fig. 14.5.
Microelectronic Circuits - Fifth Edition Sedra/Smith
Microelectronic Circuits - Fifth Edition Sedra/Smith
模拟电子电路-卓越电路相关预备知识
附录C 电路网络定理在《模拟电子电路基础》课程的学习过程中，需要用到一些经典的电路网络定理，故在此附录中将常用的电路网络定理进行简要回顾。
C.1 基尔霍夫定律当确定的电路元件连接成一定几何关系的电路之后，只要电路的连接形式不变，各节点、各回路必定满足KCL 和KVL 方程。
这种取决于电路连接形式的约束称为拓扑约束。
基尔霍夫定律包括电流定律和电压定律。
1．基尔霍夫电流定律（KCL ）在集总参数电路中，任一时刻对任一节点，流入（或流出）该节点的所有电流的代数和等于零，即 ()0i t（C.1） 列KCL 方程时，一般取流入的电流符号为正，流出的电流符号为负。
2．基尔霍夫电压定律（KVL ）在集总参数电路中，任一时刻对任一回路，沿着回路方向所有元件的电压降代数和等于零，即 ()0v t （C.2） 回路方向是任意的，一般取顺时针方向作为回路方向。
列KVL 方程时，先遇到元件电压的“+”极性，电压符号取正，否则符号取负。
例如：列写图C.1中节点2和回路3的KCL 和KVL 方程。
图C.1节点2的KCL 方程为2340i i i 。
回路3的KVL 方程为24510v v v v 。
C.2 戴维南定理和诺顿定理 戴维南定理指出：任一含源线性单口网络N ，就其对外电路的作用而言，总可以等效为一个理想电压源和一个线性电阻的串联支路。
理想电压源的电压等于该网络N 的开路电压OC u ，线性电阻O R 的大小等于该网络中所有独立源置零后所得的无源网络No 的等效电阻。
诺顿定理指出：任一含源线性单口网络N ，就其对外电路的作用而言，总可以等效为一个理想电流源和一个线性电阻的并联支路。
理想电流源的电流等于该网络N 的端口短路电流SC i ，线性电阻OR模拟电子电路基础·240·的大小等于该网络中所有独立源置零后所得的无源网络No 的等效电阻。
戴维南定理和诺顿定理是对含源线性单口网络的一种化简，其示意图如图C.2所示。
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低雜訊放大器、混波器、功率放大器、收發器、毫米波電路、微波電路
輸出入電路、靜電防制電路、時脈產生電路、頻率合成電路、電源供給與管理電 路、設計變異感測與控制電路、電磁干擾防制電路、雜訊偵測或防制電路、 漏電控制電路、電壓準位轉換電路
微電子學門 子領域
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學門子領域
數位電路 Digital circuits
記憶體Memories
微控制器與微處理器 Microcontroller and
Microprocessor 類比及混合訊號電路 Analog and Mixed-
Mode Circuits 射頻電路技術 RF Circuits
前瞻設計與設計技術 Advanced Designs and
Design Technologies
各子領域研究重點
高速數位電路、低功率數位電路、低電壓數位電路、前瞻邏輯、非同部電路、計 算機算數、微架構、計算機架構、數據處理模組、訊號處理模組
靜態記憶體、動態記憶體、內容定址記憶體、暫存器檔、嵌入式記憶體、特殊記 憶體、非揮發性記憶體、前瞻記憶體電路
微機電/微感測器與致動器設計、三維積體電路與系統、可靠性分析與設計、抗變 異性分析與設計、可製造性分析與設計、影像感測電路與系統、積體電路 封裝技術與模型、機電整合設計、高壓電路與系統、類神經網路電路與系 統、仿生電子、有機電路、軟性電子電路、統計分析及最佳化、良率分析 與提昇、微影模型與模擬、適應性設計
演算法與架構分析、設計空間探討、資料交換層級模型、軟硬體分割、電子系統 層級設計合成、電子系統層級設計平台
微电子电路英文版(Adel S.Sedra) 附录E
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Figure PE.2
Microelectronic Circuits - Fifth Edition
Sedra/Smith
Copyright © 2004 by Oxford University Press, Inc.
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Sedra/Smith
Copyright © 2004 by Oxford University Press, Inc.
2
Figure E.1 Bode plot for the typical magnitude term. The curve shown applies for the case of a zero. For a pole, the high-frequency asymptote should be drawn with a –6-dB/octave slope.
Copyright © 2004 by Oxford University Press, Inc.
6
Figure PE.1
Microelectronic Circuits - Fifth Edition
Sedra/Smith
Copyright © 2004 by Oxford University Press, Inc.
打扫环境卫生是环境保护中一个很小的部分通过打扫卫生直接改善了人们生活的小环境但间接的系统的环境问题人们并不了解也很难直接改善
s-Domain Analysis: Poles, Zeros, and Bode Plots
1
Figure EE.1
Microelectronic Circuits - Fifth Edition
Sedra/Smith
Copyright © 2004 by Oxford University Press, Inc.