机械工程英语课文翻译9-14

第九章Lapping 研磨

Lapping is a finishing operation used on flat and cylindrical surfaces. The lap, shown in Fig.9.1a, is usually made of cast iron, copper, leather, or cloth.

研磨是一种用于平面和圆柱面的精加工作业。研具，如图9.1a所示，通常用铸铁、铜、皮革或布制成。

The abrasive particles are embedded in the lap, or they may be carried through slurry. Depending on the hardness of the workpiece, lapping pressures range from 7kPa to 140kPa (1 to 20 psi).

研磨微粒嵌入研具内，或者可以通过液体携带。根据工件硬度，研磨压力可在7kPa到140kPa(1到20psi)范围中取。

Lapping has two main functions. Firstly, it produces a superior surface finish with all machining marks being removed from the surface. Secondly, it is used as a method of obtaining very close fits between mating parts such as pistons and cylinders.

研磨有两个主要作用。首先，它通过去除所有机加工痕迹能产生较好的表面光洁度。其次，它能用作获得像活塞与气缸之类配件间过盈配合的方法。

The lapped workpiece surface may look smooth but it is actually filled with microscopic peaks, valleys, scratches and pits. Few surfaces are perfectly flat. Lapping minimizes the surface irregularities, thereby increasing the available contact area.

研磨后的工件表面可能看似平滑，其实布满着微观峰、谷、划痕和凹陷。几乎没有表面是完全平整的。研磨使表面不规则最小化，因而增加了有效接触面积。

The drawing in Fig.9.1a shows two surfaces. The upper one is how a surface might look before lapping and the lower one after lapping. Lapping removes the microscopic mountain tops and produces relatively flat plateaus. Entire microscopic mountain ranges may need to be ground down in order to increase the available contact area.

图9.1a上显示了两个表面。上面是研磨前表面可能的外观模样而下面则是研磨后的模样。研磨去除了微观峰顶从而产生相对平坦的平台。整个微观山脉范围都需要磨去以增加有效接触面积。

Production lapping on flat or cylindrical pieces is done on machines such as those shown in Fig.9.1b and 9.1c. Lapping is also done on curved surfaces, such as spherical objects and lenses, using specially shaped laps.

研磨平面或圆柱面工件的生产过程是在如图9.1b和9.1c那样的机器上完成的。研磨也可采用特殊成型研具在诸如球形物体和透镜之类的曲面上进行。

Polishing 抛光

Polishing is a process that produces a smooth, lustrous surface finish. Two basic mechanisms are involved in the polishing process: (a) fine-scale abrasive removal, and (b) softening and smearing of surface layers by frictional heating during polishing.

抛光是生成平滑、有光泽表面光洁度的工艺。抛光工艺涉及两种基本机理：(a)精细等级磨粒去除，和(b)在抛光中通过摩擦生热软化并抹光表面层。

Electropolishing

Electropolishing is an electrochemical process similar to, but the reverse of, electroplating. The electropolishing process smoothes and streamlines the microscopic surface of a metal object. Mirror-like finishes can be obtained on metal surfaces by electropolishing.

电解抛光

电解抛光是一种与电镀相似的电化学工艺，但过程与电镀正好相反。电解抛光工艺使金属物体的微观表面平滑和简单化。通过电解抛光能在金属表面得到镜面光洁度。

In electropolishing, the metal is removed ion by ion from the surface of the metal object being polished. Electrochemistry and the fundamental principles of electrolysis (Faraday’s Law) replace traditional mechanical finishing techniques.

在电解抛光中，金属是逐个离子地从被抛光金属物体表面去除的。电化学和电解基本原理(Faraday定理)取代了传统的机械精加工技术。

In basic terms, the object to be electropolished is immersed in an electrolyte and subjected to a direct electrical current. The object is maintained anodic, with the cathodic connection being made to a nearby metal conductor.

用基本术语说，要电解抛光的物体被浸没在电解液中并且通上直流电。该物体为阳极，阴极连接到附近的金属导体上。

Smoothness of the metal surface is one of the primary and most advantageous effects of electropolishing. During the process, a film of varying thickness covers the surface of the metal. This film is thickest over micro depressions and thinnest over micro projections.

金属表面的平滑是电解抛光主要的和最有优势的效应之一。在此过程中，一变化着厚度的膜覆盖在金属表面上。该膜在微观凹陷处最厚而在微观凸出处最薄。

Electrical resistance is at a minimum wherever the film is thinnest, resulting in the greatest rate of metallic dissolution. Electropolishing selectively removes microscopic high points or “peaks” faster than the rate of attack on the corresponding micro-depressions or “valleys”.

电阻在膜最薄处最小，导致最大金属分解率。电解抛光选择性地去除微观高点或“峰”快于对相应微观凹陷处或“谷”的侵蚀速率。

Stock is removed as metallic salt. Metal removal under certain circumstances is controllable and can be held to 0.0001 to 0.0025 mm.

原材料以金属盐的形式被去除。在特定环境下金属的去除是可控的并且保持在0.0001 到0.0025mm范围内。

Chemical Mechanical Polishing

Chemical mechanical polishing is becoming an increasingly important step in the fabrication of multi-level integrated circuits. Chemical mechanical polishing refers to polishing by abundant slurry that interacts both chemically and mechanically with the surface being polished. 化学机械抛光

化学机械抛光正在多层集成电路制造领域成为日益重要的步骤。化学机械抛光是指大量抛光液与被抛光表面产生化学和机械作用的抛光。

During the chemical mechanical polishing process, a rotating wafer is pressed face down onto a rotating, resilient polishing pad while polishing slurry containing abrasive particles and chemical reagents flows in between the wafer and the pad.

在化学机械抛光过程中，旋转晶片面向下压在旋转、有回弹力的抛光衬垫上，而同时含有研磨微粒和化学反应物的抛光液流过晶片与衬垫之间。

The combined action of polishing pad, abrasive particles and chemical reagents results in material removal and polishing of the wafer surface. Chemical mechanical polishing creates flat, damage-free on a variety of brittle materials and it is used extensively on silicon wafers in the manufacture of integrated circuits.

抛光衬垫、研磨微粒和化学反应物的共同作用导致晶片表面的材料去除并抛光。化学机械抛光可使多种易碎材料平整且不受损害，因此在集成电路制造中被广泛地用在硅晶片上。