6R099C6-InfineonTechnologies

Data Sheet
Rev. 2.1, 2010-02-09Final
CoolMOS C6
600V CoolMOS™ C6 Power Transistor IPx60R099C6
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
600V CoolMOS™ C6 Power Transistor
IPA60R099C6, IPB60R099C6IPP60R099C6 IPW60R099C6
1Description
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use.Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler. Features •Extremely low losses due to very low FOM R dson *Q g and E oss •Very high commutation ruggedness •Easy to use/drive
•
JEDEC 1) qualified, Pb-free plating, Halogen free
Applications
PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,Lighting, Server, Telecom, UPS and Solar.
Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended.
1)J-STD20 and JESD22
Table 1Key Performance Parameters
Parameter
Value Unit V DS @ T j,max
650V R DS(on),max
0.099 Q g,typ 119nC I D,pulse
112A E oss @ 400V
9.3µJ Body diode d i /d t
300
A/µs
Type / Ordering Code Package Marking
Related Links
IPW60R099C6PG-TO247 IFX C6 Product Brief IPB60R099C6PG-TO2636R099C6
IFX C6 Portfolio IPP60R099C6PG-TO220 IFX CoolMOS Webpage IPA60R099C6
PG-TO220 FullPAK
IFX Design tools
Table of Contents Table of Contents
1Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 2Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 3Thermal characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 6Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 7Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 8Revision History. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18
Maximum ratings
2
Maximum ratings
at T j = 25 °C, unless otherwise specified.Table 2Maximum ratings
Parameter
Symbol
Values Unit
Note / Test Condition
Min.
Typ.
Max.Continuous drain current 1)1)Limited by T j,max. Maximum duty cycle D=0.75I D --37.9A
T C = 25 °C 24T C = 100°C Pulsed drain current 2)
2)Pulse width t p limited by T j,max
I D,pulse --112A T C =25°C
Avalanche energy, single pulse E AS --796mJ I D =6.6A,V DD =50V (see table 21)Avalanche energy, repetitive E AR -- 1.2I D =6.6A,V DD =50V
Avalanche current, repetitive I AR -- 6.6A MOSFET dv/dt ruggedness dv/dt --50V/ns V DS =0...480V Gate source voltage V GS -20-20V
static -3030AC (f>1 Hz)Power dissipation for TO-220, TO-247, TO-263P tot --278W T C =25°C
Power dissipation for TO-220 FullPAK
P tot --35Operating and storage temperature T j ,T stg
-55-150°C Mounting torque TO-220, TO-247--60Ncm
M3 and M3.5 screws Mounting torque TO-220 FullPAK
50M2.5 screws Continuous diode forward current I S --33A T C =25°C Diode pulse current 2)I S,pulse --112A T C =25°C
Reverse diode dv/dt 3)
3)Identical low side and high side switch with identical R G
dv/dt
--15V/ns V DS =0...400V, I SD I D ,T j =25°C Maximum diode commutation speed
3)
di f /dt
300
A/µs (see table 22)
Thermal characteristics
3Thermal characteristics
Table 3Thermal characteristics TO-220 (IPP60R099C6),TO-247 (IPW60R099C6)
Parameter
Symbol
Values Unit
Note /
Test Condition
Min.Typ.
Max.Thermal resistance, junction - case R thJC --0.45°C/W
Thermal resistance, junction - ambient
R thJA --62leaded
Soldering temperature,
wavesoldering only allowed at leads T sold
--260
°C 1.6 mm (0.063 in.) from case for 10 s
Table 4Thermal characteristics TO-220FullPAK (IPA60R099C6)
Parameter
Symbol
Values Unit
Note /
Test Condition
Min.Typ.
Max.Thermal resistance, junction - case R thJC -- 3.6°C/W
Thermal resistance, junction - ambient
R thJA --80leaded
Soldering temperature,
wavesoldering only allowed at leads T sold
--260
°C 1.6 mm (0.063 in.) from case for 10 s
Table 5Thermal characteristics TO-263 (IPB60R099C6)
Parameter
Symbol
Values Unit
Note /
Test Condition
Min.Typ.
Max.Thermal resistance, junction - case R thJC --0.45°C/W
Thermal resistance, junction - ambient
R thJA
--62
SMD version, device on PCB, minimal footprint
-35-
SMD version, device on PCB, 6cm 2 cooling area 1)
1)Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm 2 copper area (thickness 70µm) for drain connection.
PCB is vertical without air stream cooling.
Soldering temperature, wave- & reflow soldering allowed
T sold --260
°C
reflow MSL1
4Electrical characteristics
Electrical characteristics, at T j=25 °C, unless otherwise specified.Table 6Static characteristics
Parameter
Symbol
Values Unit
Note / Test Condition
Min.
Typ.
Max.Drain-source breakdown voltage V (BR)DSS 600--V V GS =0V, I D =0.25mA Gate threshold voltage V GS(th) 2.53 3.5V DS =V GS , I D =1.21mA Zero gate voltage drain current
I DSS
--5µA V DS =600V, V GS =0V, T j =25°C
-50-V DS =600V, V GS =0V, T j =150°C
Gate-source leakage current
I GSS
--100nA V GS =20V, V DS =0V Drain-source on-state resistance R DS(on)
-0.090.099ΩV GS =10V, I D =18.1A, T j =25°C
-
0.23-V GS =10V, I D =18.1A, T j =150°C
Gate resistance
R G
-
1.6-Ωf =1MHz, open drain
Table 7Dynamic characteristics
Parameter
Symbol
Values Unit
Note /
Test Condition
Min.
Typ.Max.Input capacitance C iss -2660-pF
V GS =0V, V DS =100V, f =1MHz Output capacitance
C oss -154-Effective output capacitance, energy related 1)
1)C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V (BR)DSS C o(er)
-100-V GS =0V, V DS =0...480V Effective output capacitance, time related 2)
2)C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V (BR)DSS
C o(tr)-500-I
D =constant, V GS =0V V DS =0...480V Turn-on delay time t d(on)-15-ns V DD =400V,
V GS =13V, I D =18.1A, R G =1.7Ω
(see table 20)
Rise time
t r -12-Turn-off delay time
t d(off)
-75
-Fall time t f -6-w w w .D a t a S h e e
Table 8Gate charge characteristics
Parameter
Symbol
Values Unit
Note /
Test Condition
Min.
Typ.Max.Gate to source charge Q gs -14-nC
V DD =480V, I D =18.1A, V GS =0to 10V
Gate to drain charge Q gd -61-Gate charge total Q g -119-Gate plateau voltage V plateau
- 5.4
-V Table 9Reverse diode characteristics
Parameter
Symbol
Values Unit
Note /
Test Condition
Min.
Typ.Max.Diode forward voltage V SD -0.9-V V GS =0V, I F =18.1A, T j =25°C
Reverse recovery time t rr -580-ns V R =400V, I F =18.1A, d i F /d t =100A/µs
(see table 22)
Reverse recovery charge Q rr -13-µC Peak reverse recovery current
I rrm
-43
-A
w w w .D a t a S h e e
5Electrical characteristics diagrams
Table 10
Power dissipation
TO-220, TO-247, TO-263
Power dissipation TO-220 FullPAK
P tot = f(
T
C )
P tot = f(T C )
Table 11
Max. transient thermal impedance TO-220, TO-247, TO-263
Max. transient thermal impedance TO-220 FullPAK
Z (thJC)=f(tp); parameter: D=t p /T
Z (thJC)=f(tp); parameter: D=t p /T
Electrical characteristics diagrams
Table 12
Safe operating area T C =25 °C TO-220, TO-247, TO-263
Safe operating area T C
=25 °C TO-220 FullPAK
I D =f(V DS ); T C =25 °C; D=0; parameter t p
I D =f(V DS ); T C =25 °C; D=0; parameter t p
Table 13
Safe operating area T C =80 °C TO-220, TO-247, TO-263
Safe operating area T C =80 °C TO-220 FullPAK
I D =f(V DS ); T C =80 °C; D=0; parameter t p I D =f(V DS ); T C =80 °C; D=0; parameter t p
Electrical characteristics diagrams
Table 14
Typ. output characteristics T j =25 °C
Typ. output characteristics
T j
=125 °C
I D =f(V DS ); T j =25 °C; parameter: V GS I D =f(V DS ); T j =125 °C; parameter: V GS
Table 15
Typ. drain-source on-state resistance
Drain-source on-state resistance
R DS(on)=f(I D ); T j =125 °C; parameter: V GS R DS(on)=f(T j ); I D =18.1 A; V GS =10 V
Electrical characteristics diagrams
Table 16
Typ. transfer characteristics Typ. gate charge
I D =f(V
GS );
V
DS =20V V GS =f(Q gate ), I D =18.1 A pulsed
Table 17
Avalanche energy Drain-source breakdown voltage
E AS =f(T j ); I D =6.6 A; V DD =50 V V BR(DSS)=f(T j ); I D =0.25 mA
Electrical characteristics diagrams
Table18
Typ. capacitances Typ. C oss stored energy
C=f(V DS); V GS=0 V; f=1 MHz E OSS=f(V DS)
Table19
Forward characteristics of reverse diode
I F=f(V SD); parameter: T j
Test circuits 6Test circuits
Table20Switching times test circuit and waveform for inductive load
Table21Unclamped inductive load test circuit and waveform
Table22Test circuit and waveform for diode characteristics
7Package outlines
Figure1Outlines TO-247, dimensions in mm/inches
Figure2 Outlines TO-220, dimensions in mm/inches
Figure3 Outlines TO-220 FullPAK, dimensions in mm/inches
Figure4 Outlines TO-263, dimensions in mm/inches
Revision History
8Revision History
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to: erratum@
Edition 2010-02-09Published by
Infineon Technologies AG 81726 Munich, Germany
© 2010 Infineon Technologies AG All Rights Reserved.Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third rmation
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( ).Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
CoolMOS C6 600V CoolMOS™ C6 Power Transistor
Revision History: 2010-02-09, Rev. 2.1Previous Revision:
Revision Subjects (major changes since last revision)2.0Release of final data sheet 2.1
New package outlines TO-247。