HEVEV车载充电器(OBC)及DC-DC方案

Features • Lower RDS(ON) / Same
Packages • Lowest FOM
• RDS(ON) max. X Qg typ. • Optimized Turn-ON • Robust body diode • 650V
Benefits
• High Power Density • Less paralleling MOSFET
2012
2015
2017
2018
SF3 FRFET New
SF3 Easy New
Performance Low (Efficiency) High
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10/23/2017
Easy
SF2 FRFET Design in ( EMI, Controllability ) Public
Hard
Fast/Easy Drive/FRFET Comparison
April,2018 NVB110N65S3F (Samples Q4,2017)
October ,2018
NVBL072N65S3 (Samples Q1,2018)
December ,2018 NVBL082N65S3F (Samples Q1,2018)
Feb ,2019 NVBL110N65S3F (Samples Q2,2018)
By minimized Crss !
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10/23/2017
By internal Rg !
Public
By carrier life time control !
Minimum Rds(on)(max) [mΩ]
SuperFET® III vs. SuperFET® II
Improved Rsp
- Highest reliability - Passed 6000 Thermal Cycles ( 6 x AEC-Q101 requirement)
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10/23/2017
Public
APM ( Automotive Power Module - MOSFET)
EMC
Al Wire
Bond wires Power dies
• Less paralleling MOSFETs Less space requirements Less critical for layout interferences of paralleling devices
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10/23/2017
Public
Features, Benefits and Applications of SFIII 650V
基于超结MOSFET、宽禁带(WBG)及模块的 HEV/EV车载充电器(OBC)及DC-DC方案
Charlie Wang October 2017
Public Information
Technology Driven Capability
Pout [W] 10M
Silicon : 12V – 1700V - Best FOM, Packaging Options
2004
2009
• SuperFET series : Multi Epi Type
• SupreMOS : Trench Type
2011
SuperFET II Fast (2011)
• Direct replace to SupreMOS® • For high efficiency
SuperFET II (2012) – Easy Drive
250 199
200
150
110 100
70
50
99 104 67
41 23
0 D2PAK Power88 TO-220 TO-247
Blue: SuperFET III Red: SuperFET II
• Higher power density • Ideal for High Power
OBC systems
- Large source pin - Low resistance contact to board , further dissipation and reliability advantage (less electro-migration at high temperature / high current)
SuperFET II and III
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10/23/2017
Public
Automotive HV MOSFET’s
PKG
RDS(on) 25mΩ 28mΩ 40mΩ 72mΩ
82mΩ
110mΩ
D2PAK
TOLL HV
TO-247
TO-247-4L
March,2018 NVB082N65S3F (Samples Available)
GaN
10k
100k
1M
* PV = photovoltaic inverter; ** OBC = onboard charger
10M fsw [Hz]
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10/23/2017
Public
SJ MOSFET 650V Technology Evolution
SJ MOSFET Generation
November ,2017
NVHL082N65S3F (Samples Q1,2018)
June ,2018
NVHL110N65S3F (Samples Q1,2018)
August ,2018
150mΩ
May,2018
NVB150N65S3F (Samples Q1,2018)
March ,2019
Auto SuperFET III (2017) – Easy Drive
• 41% lower Rsp than SF2 • Direct replace to SF2 •72mohm in D2pak • 67mΩ in TO-220/F, 25mΩ in TO-247
Auto SuperFET III (2018) – FRFET 28mΩ in TO-247 80mΩ in D2pak
NVH025N65S3 (Samples Available)
NVHL028N65S3F (Samples Q4,2017)
NVHL040N65S3F (Samples Q4,2017)
NVH072N65S3 (Samples Available)
October ,2017
April ,2018
May ,2018
NVBL150N65S3F (Samples Q2,2018)
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10/23/2017
Public
New Package for Fast Switching Applications
Package Outline TOLL Standard Package
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10/23/2017
Public
TOLL Package with Kelvin Sense
• Direct replace to SF1 • Easy to design by a internal Rg •104mΩ in TO-220, 41mΩ in TO-247
Auto SuperFET II (2012) – FRFET
• Smaller Qrr and robust body diode • For soft switching topologies
- 9.8x11.7 mm vs 10.2x15.2 mm 30% less board space & half in height
- High Creepage and Clearance 2.4mm than D2pak 1.5mm - Good thermal efficiency
- Very low package resistance 40% lower RPackage supports very low power dissipation
Easy Drive Version
• Easy to drive with low gate oscillations. Low EMI and Voltage spikes
• Controlled lower Coss.பைடு நூலகம்• Hard/Soft Switching
Topologies • Boost PFC, Semi Bridgeless • PFC, Phase Shift DC-DC
FAST Version
• High efficiency • Hard Switching Topologies • Reduced Qg and Eoss • Hard Switching Topologies • Boost PFC,Full Bridge Phase • Bidirectional Buck- Boost • Semi Bridgeless PFC
Q3 2019 100V. S.R. Module
12V & 48V High Power Auxiliaries
Q2 2018 650V OBC / DCDC
• High System Efficiency
• High System Reliability
• Improved Safety Margin
Applications
• OBC and HV DC-DC • Automotive HEV-EV
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10/23/2017
Public
HV MOSFET Portfolio for OBC Systems
- low Thermal Resistance (0.35 to 0.5 C/W) - Low package inductance
- ~ 2 nH package inductance compared to ~ 6-8 nH of D2PAK improved EMI, simplifies board-design
FRFET Version
• Fast Body Diode • Small Qrr and Trr • Robust diode ruggedness • Better reliability • Soft switching resonant • topologies like LLC, LCC, • Dual Active Bridge DC-DC
Source Wire of 5mil
Existing package with no Kelvin Sense
Reference Die Information for HV SF2 attached
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10/23/2017
Public
TO-Leadless Package
- Automotive released portfolio from 40V to 150 - Automotive Development for 650V HV MOSFET’s - Very high current capability up to 300A - - Smaller footprint than D2PAK
Signal leads
DBC
Lead Frame
Power
leads
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10/23/2017
Public
DBC substrate
APM Portfolio & Roadmap
Application/ Battery Voltage
EV / HEV
470V HEV / EV – OBC and DC-DC
SiC
Superjunction: 650V – 900V - Optimized HV solution
1M
100k
10k
Silicon
Remains
1k Mainstream
Technology
1k
Central PV* String PV*
pile
OBC**
SJ
SiC: 900V – 1200V - High power density performance GaN: 650V - High frequency performance
SuperFET II (2011)
SuperFET I (2004)
• First Gen. SJ MOSFET • Best-in-class body diode dv/dt •190mΩ in TO-220, 70mΩ in TO-247
SupreMOS (2009)
• 50% lower Qg than SF1 • World 1st Trench Type • 90mΩ in TO-220, 36mΩ in TO-247