半导体制程
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SiH4 (气) + NH3 ((气) Si3N4 (固) TiCl4 (气) + NH3((气) TiN (固)
Si3N4 (氮化硅)
厚度符合 要求 ??
CMP (化学机械研磨) Module
Process Procedures (制程步骤):
(a) Chemical Mechanical Polishing (化学机械研磨) 简称 CMP (b) 单片研磨 (c) 主要目的: 表面平坦化 (d) Thickness measurement (研磨后厚度量測)
Etching gas (蚀刻气体)
光阻同时会被吃掉一些
大小或宽度是否OK ??? (AEI_CD) 光阻去除
光阻
光阻
(WET)
Thin-Film (薄膜) Module
Process Procedures (制程步骤):
(a) Thin film deposition (薄膜沉积, 单片) (b) Thickness measurement (沉积厚度量測) (c) Film types (薄膜种类): (i) 非导体: oxide (氧化物), nitride (氮化硅) (ii) 导体: metal (金属: W, Ti, TiN, Al)
P-sub
Brief Process Flow - Drain Engineering
7 Spacer Formation : 7.1 PETEOS dep. 7.2 SiN dep. 7.3 Spacer dry etch 8. Source and Drain Formation: 8.1 N+ Lithography 8.2 N+ implant 8.3 PR stripping 8.4 P+ Lithography 8.5 P+ implant 8.6 PR stripping
PR: Photo Resist (光 阻) 特殊光线 (化学物品) CD: Critical Dimension Mask (光罩) (重要尺寸)
曝光区
(1) 大小或宽度是否OK ? (ADI_CD) (2) 光阻是否曝开 ? (ADI)
光阻
光阻
光阻
PHOTO (黄光) Module
光阻区 (PR)
(a) PR_coating (上光 阻) 光阻见白光即反应 用黄光 (b) Photo_mask & exposure (上光罩及曝光) (c) CD measurement (曝光后量测) 简称 ADI_CD (d) After Develop Inspection (曝光后检查 ) 简称 ADI
Diffusion mask Stepper Exposure Photo Resistor coating SiN (Nitride) Pad oxide P-sub (Silicon wafer)
Diffusion P.R. SiN (Nitride) P-sub Pad oxide (Silicon wafer)
Brief Process Flow - Isolation
1.1. Wafer Start 1.2. PAD Oxidation 110A (stress buffer) 1.7. SiN (Nitride) Deposition 1.5KA 1.8. Diffusion Lithography : 1.8.1 P.R. coating 1.8.2 Stepper Exposure 1.8.3 Development
STI
Diffusion P.R.STI SiN (Nitride) Pad oxide P-sub (Silicon wafer)
Brief Process Flow – Isolation (Cont)
1.7. APCVD STI refill 1.7.1 Liner Oxide Growth 1.7.2 APCVD Oxide deposition 1.7.3 STI Furnace 1000C Densify 1.8. STI CMP (Chemical-Mechanical Polish) 1.9. SiN remove
P-WELL Implant N-WELL 1. P-WELLN-WELL- 1 2. P-WELLN-WELL- 2 Stepper Exposure Stepper Exposure 7. N P MOS - VT N-WELL P-WELL Mask Mask 8. N P MOS anti-punch
Brief Process Flow - Gate Engineering
5 Poly Gate Formation : 5.1 Poly annealing 5.2 PR coating 5.3 POLY Lithography 5.4 Development 5.5 POLY Gate etching 5.6 PR stripping 5.7 Thin Oxide Growth Stepper Exposure Poly Mask NLDD 6. LDD (Light Dope Drain) implant PR coating P-LDD PR 6.1 N-LDD Lithography (ellipsis) N-LDD Implant P-LDD implant Poly P-LDD 6.2 NLDD / N-PKT implant P-PKT STI 6.3 P-LDD Lithography (ellipsis) NWELL PWELL N-LDD N-LDD 6.4 PLDD / P-PKT implant N-PKT N-PKT
CMP平坦化
Film
厚度符合 要求 ??
Diffusion (扩散) Module
Process Procedures (制程步骤):
(a) Film deposition (炉管薄膜沉积, 150片) (b) Thickness measurement (沉积厚度量測) (c) Film types (薄膜种类): (i) 非导体: oxide (氧化物), nitride (氮化硅) (ii) 导体: Doped-poly & WSi
薄膜 或 扩散 制程
Surface clean (表面清洗)
Film deposition
酸槽浸泡
光阻去除 或 磷酸吃 Si3N4
Film removal
Implant (离子植入) Module
Process Procedures (制程步骤):
(a) Photo Exposure (黄光曝光) (b) Ion Implantation (离子植入) 简称 IMP (c) WET_PR_stripping (光阻去除, 酸槽)
Hierarchy of IC Chip
Multilevel Metallization
连接线
Backend process
Via 3
M4
Diffusion Barrier/ Adhesion Promoter IMD3
M3 Via 2 M2 Via 1 M1 IMD2
Plug
IMD1
Frontend
Si (固) + O2 (气) SiO2 (固) SiH4 (气) + NH3 ((气) Si3N4 (固)
Film
厚度符合 要求 ??
WET (酸槽) Module
Process Procedures (制程步骤):
(a) Pre-clean for deposition (薄膜沉积前清洗) (b) Film removal by WET (薄膜去除) (c) PR strip (光阻去除)
特殊光线
Mask (光罩)
P+ P+ P+ P + P+ 光阻去除后 (WET) P+ P+
曝光区
光阻
植入区
光阻
半导体制造工程
PHOTO (黄光) 制程 & 设备 ETCH (蚀刻) 制程 & 设备 Thin-Film (薄膜)--CVD 制程 & 设备 Thin-Film (薄膜)--PVD 制程 & 设备 CMP (化学机械研磨) 制程 & 设备 Diffusion (扩散) 制程 & 设备 WET (酸槽) 制程 & 设备 Implant (离子植入) 制程 & 设备 Integration (制程整合) Manufacture (制造部)
Contact
ILD
Active Area
电晶体 (晶体管) MOSFET: Metal-Oxide-Semiconductor Field-Effect Transistor
晶柱
Wafer Manufacturing Overview
芯片
Wafer
Silicon Ingot
沉积 Deposition
Brief Process Flow – Isolation (Cont)
SEM (Scanning Electronic Microscope)
1.7. Trench (STI) Plasma Etching 1.7.1 SiN Etching 1.7.2 Silicon Etching 1.8. Photo Resistor remove
光罩制作/光刻 Mask Making/ Photolithography
蚀刻 Etching
离子植入 Ion Implantation
电镀 Electroplating
切割、封装 Assembly&Testing
(Die,晶粒)
(Chip,晶芯)
PHOTO (黃光) Module
Process Procedures (制程步骤):
Stepper Exposure N+POLY Mask Stepper Exposure N+POLY PR N+POLY implant PR Coating TG Mask UPOLY growth PR coating Gate Oxide Gate Oxide 2 NWELL
PWELL
P-sub (Silicon)
ADI_CD 光 阻 区 (PR)
ADI_CD
ETCH (蚀刻) Module
Process Procedures (制程步骤):
(a) Dry Etching (气相蚀刻) 化学反应后成气体去除 (b) WET_PR_stripping (光阻去除, 硫酸槽) (c) CD measurement (蚀刻后量測) 简称AEI_CD (d) After Etch Inspection (蚀刻后检查) 简称 AEI
P.R. Coating N-WELL P.R.
STI PWELL
Sac. oxide N-WELL
P-sub(Silicon)
Brief Process Flow - Gate Oxide and POLY
3 Gate Oxide Formation : 3.1 Thick Gate Oxide Growth 3.2 PR coating n Electron Microscope) 3.3 TG Lithography 3.4 Development 3.5 RCA-A Wet etching 3.6 PR stripping 3.7 Thin Gate Oxide Growth 4. Poly Growth 4.1 undope. POLY growth 4.2 N+POLY PR coating 4.3 N+POLY Lithography 4.4 Development 4.5 N+POLY implant and PR Strip
Hale Waihona Puke BaiduSTI
Diffusion SiN (Nitrid) STI Pad oxide P-sub
(Silicon wafer)
Brief Process Flow - Well formation
2.1 N-WELL Formation : 2.1.1 N-WELL PR coating 2.1.2 N-WELL Lithography 2.1.3 Development 2.1.4 N-WELL implant 2.1.5 PR stripping 2.2 P-WELL Formation : 2.2.1 P-WELL PR coating 2.2.2 P-WELL Lithography 2.2.3 Development 2.2.4 P-WELL implant 2.2.5 PR stripping
Si3N4 (氮化硅)
厚度符合 要求 ??
CMP (化学机械研磨) Module
Process Procedures (制程步骤):
(a) Chemical Mechanical Polishing (化学机械研磨) 简称 CMP (b) 单片研磨 (c) 主要目的: 表面平坦化 (d) Thickness measurement (研磨后厚度量測)
Etching gas (蚀刻气体)
光阻同时会被吃掉一些
大小或宽度是否OK ??? (AEI_CD) 光阻去除
光阻
光阻
(WET)
Thin-Film (薄膜) Module
Process Procedures (制程步骤):
(a) Thin film deposition (薄膜沉积, 单片) (b) Thickness measurement (沉积厚度量測) (c) Film types (薄膜种类): (i) 非导体: oxide (氧化物), nitride (氮化硅) (ii) 导体: metal (金属: W, Ti, TiN, Al)
P-sub
Brief Process Flow - Drain Engineering
7 Spacer Formation : 7.1 PETEOS dep. 7.2 SiN dep. 7.3 Spacer dry etch 8. Source and Drain Formation: 8.1 N+ Lithography 8.2 N+ implant 8.3 PR stripping 8.4 P+ Lithography 8.5 P+ implant 8.6 PR stripping
PR: Photo Resist (光 阻) 特殊光线 (化学物品) CD: Critical Dimension Mask (光罩) (重要尺寸)
曝光区
(1) 大小或宽度是否OK ? (ADI_CD) (2) 光阻是否曝开 ? (ADI)
光阻
光阻
光阻
PHOTO (黄光) Module
光阻区 (PR)
(a) PR_coating (上光 阻) 光阻见白光即反应 用黄光 (b) Photo_mask & exposure (上光罩及曝光) (c) CD measurement (曝光后量测) 简称 ADI_CD (d) After Develop Inspection (曝光后检查 ) 简称 ADI
Diffusion mask Stepper Exposure Photo Resistor coating SiN (Nitride) Pad oxide P-sub (Silicon wafer)
Diffusion P.R. SiN (Nitride) P-sub Pad oxide (Silicon wafer)
Brief Process Flow - Isolation
1.1. Wafer Start 1.2. PAD Oxidation 110A (stress buffer) 1.7. SiN (Nitride) Deposition 1.5KA 1.8. Diffusion Lithography : 1.8.1 P.R. coating 1.8.2 Stepper Exposure 1.8.3 Development
STI
Diffusion P.R.STI SiN (Nitride) Pad oxide P-sub (Silicon wafer)
Brief Process Flow – Isolation (Cont)
1.7. APCVD STI refill 1.7.1 Liner Oxide Growth 1.7.2 APCVD Oxide deposition 1.7.3 STI Furnace 1000C Densify 1.8. STI CMP (Chemical-Mechanical Polish) 1.9. SiN remove
P-WELL Implant N-WELL 1. P-WELLN-WELL- 1 2. P-WELLN-WELL- 2 Stepper Exposure Stepper Exposure 7. N P MOS - VT N-WELL P-WELL Mask Mask 8. N P MOS anti-punch
Brief Process Flow - Gate Engineering
5 Poly Gate Formation : 5.1 Poly annealing 5.2 PR coating 5.3 POLY Lithography 5.4 Development 5.5 POLY Gate etching 5.6 PR stripping 5.7 Thin Oxide Growth Stepper Exposure Poly Mask NLDD 6. LDD (Light Dope Drain) implant PR coating P-LDD PR 6.1 N-LDD Lithography (ellipsis) N-LDD Implant P-LDD implant Poly P-LDD 6.2 NLDD / N-PKT implant P-PKT STI 6.3 P-LDD Lithography (ellipsis) NWELL PWELL N-LDD N-LDD 6.4 PLDD / P-PKT implant N-PKT N-PKT
CMP平坦化
Film
厚度符合 要求 ??
Diffusion (扩散) Module
Process Procedures (制程步骤):
(a) Film deposition (炉管薄膜沉积, 150片) (b) Thickness measurement (沉积厚度量測) (c) Film types (薄膜种类): (i) 非导体: oxide (氧化物), nitride (氮化硅) (ii) 导体: Doped-poly & WSi
薄膜 或 扩散 制程
Surface clean (表面清洗)
Film deposition
酸槽浸泡
光阻去除 或 磷酸吃 Si3N4
Film removal
Implant (离子植入) Module
Process Procedures (制程步骤):
(a) Photo Exposure (黄光曝光) (b) Ion Implantation (离子植入) 简称 IMP (c) WET_PR_stripping (光阻去除, 酸槽)
Hierarchy of IC Chip
Multilevel Metallization
连接线
Backend process
Via 3
M4
Diffusion Barrier/ Adhesion Promoter IMD3
M3 Via 2 M2 Via 1 M1 IMD2
Plug
IMD1
Frontend
Si (固) + O2 (气) SiO2 (固) SiH4 (气) + NH3 ((气) Si3N4 (固)
Film
厚度符合 要求 ??
WET (酸槽) Module
Process Procedures (制程步骤):
(a) Pre-clean for deposition (薄膜沉积前清洗) (b) Film removal by WET (薄膜去除) (c) PR strip (光阻去除)
特殊光线
Mask (光罩)
P+ P+ P+ P + P+ 光阻去除后 (WET) P+ P+
曝光区
光阻
植入区
光阻
半导体制造工程
PHOTO (黄光) 制程 & 设备 ETCH (蚀刻) 制程 & 设备 Thin-Film (薄膜)--CVD 制程 & 设备 Thin-Film (薄膜)--PVD 制程 & 设备 CMP (化学机械研磨) 制程 & 设备 Diffusion (扩散) 制程 & 设备 WET (酸槽) 制程 & 设备 Implant (离子植入) 制程 & 设备 Integration (制程整合) Manufacture (制造部)
Contact
ILD
Active Area
电晶体 (晶体管) MOSFET: Metal-Oxide-Semiconductor Field-Effect Transistor
晶柱
Wafer Manufacturing Overview
芯片
Wafer
Silicon Ingot
沉积 Deposition
Brief Process Flow – Isolation (Cont)
SEM (Scanning Electronic Microscope)
1.7. Trench (STI) Plasma Etching 1.7.1 SiN Etching 1.7.2 Silicon Etching 1.8. Photo Resistor remove
光罩制作/光刻 Mask Making/ Photolithography
蚀刻 Etching
离子植入 Ion Implantation
电镀 Electroplating
切割、封装 Assembly&Testing
(Die,晶粒)
(Chip,晶芯)
PHOTO (黃光) Module
Process Procedures (制程步骤):
Stepper Exposure N+POLY Mask Stepper Exposure N+POLY PR N+POLY implant PR Coating TG Mask UPOLY growth PR coating Gate Oxide Gate Oxide 2 NWELL
PWELL
P-sub (Silicon)
ADI_CD 光 阻 区 (PR)
ADI_CD
ETCH (蚀刻) Module
Process Procedures (制程步骤):
(a) Dry Etching (气相蚀刻) 化学反应后成气体去除 (b) WET_PR_stripping (光阻去除, 硫酸槽) (c) CD measurement (蚀刻后量測) 简称AEI_CD (d) After Etch Inspection (蚀刻后检查) 简称 AEI
P.R. Coating N-WELL P.R.
STI PWELL
Sac. oxide N-WELL
P-sub(Silicon)
Brief Process Flow - Gate Oxide and POLY
3 Gate Oxide Formation : 3.1 Thick Gate Oxide Growth 3.2 PR coating n Electron Microscope) 3.3 TG Lithography 3.4 Development 3.5 RCA-A Wet etching 3.6 PR stripping 3.7 Thin Gate Oxide Growth 4. Poly Growth 4.1 undope. POLY growth 4.2 N+POLY PR coating 4.3 N+POLY Lithography 4.4 Development 4.5 N+POLY implant and PR Strip
Hale Waihona Puke BaiduSTI
Diffusion SiN (Nitrid) STI Pad oxide P-sub
(Silicon wafer)
Brief Process Flow - Well formation
2.1 N-WELL Formation : 2.1.1 N-WELL PR coating 2.1.2 N-WELL Lithography 2.1.3 Development 2.1.4 N-WELL implant 2.1.5 PR stripping 2.2 P-WELL Formation : 2.2.1 P-WELL PR coating 2.2.2 P-WELL Lithography 2.2.3 Development 2.2.4 P-WELL implant 2.2.5 PR stripping