场效应管AON6411参数大全

MaximumParameter Absolute Maximum Ratings T A =25°C unless otherwise noted PIN1Symbolt ≤ 10s Steady-State Steady-StateR θJCParameterTyp Max °C/W R θJA 144017Thermal CharacteristicsUnits Maximum Junction-to-Ambient A Continuous Drain Current GGate-Source Voltage Drain-Source Voltage -20T =25°C T =100°C Maximum Junction-to-Case°C/W°C/W Maximum Junction-to-Ambient A D 0.6550.8SymbolMin Typ Max Units BV DSS -20VV DS =-20V, V GS =0V-1T J =55°C -5I GSS ±100nA V GS(th)Gate Threshold Voltage -0.5-0.85-1.3V I D(ON)-340A 1.7 2.1T J =125°C 2.4532 2.5m Ω2.8 3.6m Ωg FS 115S V SD -0.57-1V I S-85A C iss 10290pF C oss 1910pF C rss 1395pFR g2.1 4.2ΩQ g (10V)235330nC Q g (4.5V)100140nC Q gs 21nC Q gd 36nC Maximum Body-Diode Continuous CurrentGInput Capacitance Output CapacitanceDYNAMIC PARAMETERS Reverse Transfer Capacitance V GS =0V, V DS =-10V, f=1MHz SWITCHING PARAMETERS Gate resistanceV GS =0V, V DS =0V, f=1MHzTotal Gate Charge V GS =-10V, V DS =-10V, I D =-20AGate Source Charge Gate Drain Charge Total Gate Charge Zero Gate Voltage Drain Current Gate-Body leakage current m ΩI S =-1A,V GS =0VV DS =-5V, I D =-20A V GS =-2.5V, I D =-20AForward Transconductance Diode Forward VoltageV GS =-4.5V, I D =-20A Electrical Characteristics (T J =25°C unless otherwise noted)STATIC PARAMETERS ParameterConditions Drain-Source Breakdown Voltage On state drain currentI D =-250µA, V GS =0V V GS =-10V, V DS =-5V V GS =-10V, I D =-20AR DS(ON)Static Drain-Source On-ResistanceI DSS µA V DS =V GS, I D =-250µA V DS =0V, V GS =±12V t D(on)9ns t r 18ns t D(off)282ns t f 90ns t rr 48nsQ rr178nCTHIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.Turn-On DelayTime Body Diode Reverse Recovery Charge I F =-20A, dI/dt=500A/µsTurn-On Rise Time Turn-Off DelayTime I F =-20A, dI/dt=500A/µsV GS =-10V, V DS =-10V, R L =0.5Ω,R GEN =3ΩTurn-Off Fall TimeBody Diode Reverse Recovery TimeA. The value of R θJA is measured with the device mounted on 1in 2FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.B. The power dissipation P D is based on T J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial T J =25°C.Maximum UIS current limited by test equipment.D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating.G. The maximum current rating is package limited.H. These tests are performed with the device mounted on 1 in 2FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS17521000204060801000.511.522.53-I D (A )-V GS (Volts)Figure 2: Transfer Characteristics (Note E)1234551015202530R D S (O N )(m Ω)-I D (A)Figure 3: On-Resistance vs. Drain Current and Gate0.811.21.41.61.80255075100125150175N o r m a l i z e d O n -R e s i s t a n c eTemperature (°C)V GS =-4.5V I D =-20A V GS =-10V I D =-20AV GS =-2.5VI D =-20A25°C125°CV DS =-5VV GS =-2.5VV GS =-10V020*********12012345-I D (A )-V DS (Volts)Fig 1: On-Region Characteristics (Note E)V GS =-1.5V-2V-10V-2.5V-4.5VV GS =-4.5V 1840Voltage (Note E)1.0E-051.0E-041.0E-031.0E-021.0E-011.0E+001.0E+011.0E+020.00.20.40.60.81.0-I S (A )-V SD (Volts)Figure 6: Body-Diode Characteristics (Note E)25°C125°CFigure 4: On-Resistance vs. Junction Temperature (Note E)01234560246810R D S (O N )(m Ω)-V GS (Volts)Figure 5: On-Resistance vs. Gate-Source Voltage(Note E)I D =-20A25°C125°CTYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS1752100050100150200255075100125150P o w e r D i s s i p a t i o n (W )T CASE (°C)Figure 13: Power De-rating (Note F)0204060801000255075100125150C u r r e n t r a t i n g ID (A )1101001000100000.00010.01110010000P o w e r (W )T A =25°C11010010001101001000-I A R (A ) P e a k A v a l a n c h e C u r r e n tTime in avalanche, t A (µs)Figure 12: Single Pulse Avalanche capability(Note C)T A =25°CT A =150°CT A =100°CT A =125°C18400.0010.010.11100.00010.0010.010.11101001000Z θJ A N o r m a l i z e d T r a n s i e n t T h e r m a l R e s i s t a n c ePulse Width (s)Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)Single PulseD=T on /TT J,PK =T A +P DM .Z θJA .R θJA T onTP DIn descending orderD=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulseT CASE (°C)Figure 14: Current De-rating (Note F)Pulse Width (s)Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note H)R θJA =55°C/WVdsChargeGate Charge Test Circuit & WaveformVdsUnclamped Inductive Switching (UIS) Test Circuit & Waveforms2E = 1/2 LI AR ARVddResistive Switching Test Circuit & Waveforms90%10%VddIdVgsBV DSSI ARVdd。