集成电路封装和可靠性Chapter2-1-芯片互连技术

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Chapter 2

Chip Level Interconnection

芯片互连技术

集成电路封装测试与可靠性

UESTC-Ning Ning

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Wafer In

Wafer Grinding (WG 研磨)Wafer Saw (WS 切割)Die Attach (DA 黏晶)Epoxy Curing (EC 银胶烘烤)Wire Bond (WB 引线键合)Die Coating (DC 晶粒封胶/涂覆)

Molding (MD 塑封)Post Mold Cure (PMC 模塑后烘烤)Dejunk/Trim (DT 去胶去纬)

Solder Plating (SP 锡铅电镀)Top Mark (TM 正面印码)Forming/Singular (FS 去框/成型)

Lead Scan (LS 检测)Packing (PK 包装)

典型的IC 封装工艺流程

集成电路封装测试与可靠性

UESTC-Ning Ning

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电子级硅所含的硅的纯度很高,可达99.9999 99999 %

中德电子材料公司制作的晶棒(

长度达一公尺,重量超过一百公斤

)

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Wafer Back Grinding

⏹Purpose

The wafer backgrind process reduces the thickness of the wafer produced by silicon fabrication (FAB) plant. The wash station integrated into the same machine is used to wash away debris left over from the grinding process.

⏹Process Methods:

1) Coarse grinding by mechanical.(粗磨)2) Fine polishing by mechanical or plasma etching. (细磨抛光

)

UESTC-Ning Ning

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旋转及振荡轴

在旋转平盘上之晶圆

下压力

工作台仅在指示有晶圆期间才旋转

Method:

The wafer is first mounted on a backgrind tape and is then loaded to the backgrind machine coarse wheel . As the coarse grinding is completed, the wafer is transferred to a fine wheel for polishing .

UESTC-Ning Ning6 Wafer Back Grinding process

Objective:

To reduce the

thickness

with a coarse grinding

wheel.

Objective:

To load and align

the wafer into the

wafer cleaning and

tape lamination

machine.

Objective:

To clean the wafer

for the next

lamination step.

Objective:

To laminate a protective

layer of film on the

circuitry surface of the

wafer .

2. Wafer cleaning

1. Load and Align 3. Back grind Tape lamination

4. Coarse grinding

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Wafer Back Grinding process (Cont.)

Objective:To unload the wafer from back grinding machine.

5. Fine polishing

6. Unload

Objective:To load the wafer to wafer mounter.

Objective:

To remove the back grind tape after

wafer mounted on the frame.

8. Tape removal

7. Load

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Wafer Back Grinding Issues and Challenges

⏹Issues

☐Ease of process

–Thin wafer handling from one step to another –Back grinding tape removal

–Excessive stresses removal or reduction from the wafer.(应力)☐Yield

–Wafer breakage due to stress built up during thinning process. –Scratches .(划痕)

–Die metallization smearing.(污点,模糊)☐Equipment stability and capability

⏹Challenges

☐Market requirements drive for very thin wafer (<3 mils)☐Flip chip wafer back grinding

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