TI CC1190 射频芯片说明
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• Up to 27 dBm (0.5 W) Output Power • 6 dB Typical Sensitivity Improvement with
CC11xx and CC430 • Few External Components
– Integrated PA – Integrated LNA – Integrated Switches – Integrated Matching Network – Integrated Inductors • Digital Control of LNA and PA Gain by HGM Pin • 50-nA in Power Down (LNA_EN = PA_EN = 0) • High Transmit Power Efficiency – PAE = 50% at 26 dBm Output Power • Low Receive Current Consumption – 3 mA for High Gain Mode – 26 µA for Low Gain Mode • 2.9 dB LNA Noise Figure, Including Switch and External Antenna Match • RoHS Compliant 4-mm × 4-mm QFN-16 Package • 2 V to 3.7 V Operation
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
Receive current Transmit current
PIN = -40 dBm, HGM = 1 PIN = -40 dBm, HGM = 0 PIN = 5 dBm, POUT = 26.5 dBm, HGM = 1 No input signal, HGM = 1
VALUE
UNIT
Supply voltage, VDD Voltage on any digital pin
All supply pins must have the same voltage
–0.3 to 3.8
V
–0.3 to VDD + 0.3, max 3.8
V
Input RF level
10
dBm
Storage temperature range
–50 to 150
°C
Human-body model, non RF pins
2000
V
ESD
Human-body model, RF pins: PA_IN, PA_OUT, TR_SW, LNA_IN, LNA_OUT
1500
V
Charged device model
TC = 25°C, VDD = 3 V, fRF = 915 MHz (unless otherwise noted). Measured on CC1190EM reference design including external matching components optimized for 915 MHz operation.
Copyright © 2009–2010, Texas Instruments Incorporated
CC1190
SWRS089 A – NOVEMBER 2009 – REVISED FEBRUARY 2010
ELECTRICAL CHARACTERISTICS (continued)
DEVICE CC1190RGVR CC1190RGVT
ORDERING INFORMATION
TEMPERATURE
PACKAGE (1)
-40°C to 85°C
QFN (RVG) 16
TRANSPORTION MEDIA Tape and Reel, 2500 Tape and Reel, 250
HGM, LNA_EN, PA_EN
0.3 V
Power down → Receive mode, switching time
300
ns
Power down → Transmit mode, switching time
600
ns
2
Submit Documentation Feedback
Product Folder Link(s) :CC1190
CC1190
SWRS089 A – NOVEMBER 2009 – REVISED FEBRUARY 2010
850 – 950 MHz RF Front End
Check for Samples: CC1190
FEATURES
1
• Seamless Interface to Sub-1 GHz Low Power RF Devices from Texas Instruments
EN
PREAMP
EN
TR_SW LNA_IN
BIAS BIAS
LNA
EN
HGM
LOGIC
PA_IN
LNA_OUT PA_EN LNA_EN
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
3
mA
26
µA
302
56
mA
No input signal, HGM = 0
29
Power down current
LNA_EN = PA_EN = 0
50
200 nA
High input level (control pins)
HGM, LNA_EN, PA_EN
1.3
VDD V
Low input level (control pins)
CC1190 provides an efficient and easy-to-use range extender in a compact 4-mm × 4-mm QFN-16 package.
CC1190 BLOCK DIAGRAM
VDD_LNA VDD_PA1 VDD_PA2
PA_OUT
PA
ABSOLUTE MAXIMUM RATINGS
Under no circumstances must the absolute maximum ratings be violated. Stress exceeding one or more of the limiting values may cause permanent damage to the device.
CC1190 integrates a power amplifier (PA), a low-noise amplifier (LNA), switches, and RF matching for the design of a high-performance wireless systems.
1000
V
RECOMMENDED OPERATING CONDITIONS
Ambient temperature range Operating supply voltage Operating frequency range
Mห้องสมุดไป่ตู้N
MAX
UNIT
–40
85
°C
2
3.7
V
850
950
MHz
ELECTRICAL CHARACTERISTICS
APPLICATIONS
• 850 - 950 MHz ISM Bands Wireless Systems • Wireless Sensor Networks • Wireless Industrial Systems • IEEE 802.15.4 Systems • Wireless Consumer Systems • Wireless Metering (AMR/AMI) Systems • Smart Grid Wireless Networks
Copyright © 2009–2010, Texas Instruments Incorporated
CC1190
SWRS089 A – NOVEMBER 2009 – REVISED FEBRUARY 2010
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
RF Receive
Gain Gain variation over frequency Gain variation over power supply
Noise figure
PIN = -40 dBm, HGM = 1 PIN = -40 dBm, HGM = 0 850–950 MHz, PIN = -40 dBm, HGM = 1 2 – 3.7 V, PIN = -40 dBm, HGM = 1 HGM = 1, including internal switch and external antenna match
CC1190 increases the link budget by providing a power amplifier for increased output power, and an LNA with low noise figure for improved receiver sensitivity.
HGM = 0, including internal switch and external antenna match
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
DESCRIPTION
CC1190 is a cost-effective and high-performance RF Front End for low-power and low-voltage wireless applications at 850 - 950 MHz.
CC1190 is a range extender for the sub-1 GHz low-power RF transceivers, transmitters, and System-on-Chip devices from Texas Instruments.
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI website at .
TC = 25°C, VDD = 3 V, fRF = 915 MHz (unless otherwise noted). Measured on CC1190EM reference design including external matching components optimized for 915 MHz operation.
CC11xx and CC430 • Few External Components
– Integrated PA – Integrated LNA – Integrated Switches – Integrated Matching Network – Integrated Inductors • Digital Control of LNA and PA Gain by HGM Pin • 50-nA in Power Down (LNA_EN = PA_EN = 0) • High Transmit Power Efficiency – PAE = 50% at 26 dBm Output Power • Low Receive Current Consumption – 3 mA for High Gain Mode – 26 µA for Low Gain Mode • 2.9 dB LNA Noise Figure, Including Switch and External Antenna Match • RoHS Compliant 4-mm × 4-mm QFN-16 Package • 2 V to 3.7 V Operation
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
Receive current Transmit current
PIN = -40 dBm, HGM = 1 PIN = -40 dBm, HGM = 0 PIN = 5 dBm, POUT = 26.5 dBm, HGM = 1 No input signal, HGM = 1
VALUE
UNIT
Supply voltage, VDD Voltage on any digital pin
All supply pins must have the same voltage
–0.3 to 3.8
V
–0.3 to VDD + 0.3, max 3.8
V
Input RF level
10
dBm
Storage temperature range
–50 to 150
°C
Human-body model, non RF pins
2000
V
ESD
Human-body model, RF pins: PA_IN, PA_OUT, TR_SW, LNA_IN, LNA_OUT
1500
V
Charged device model
TC = 25°C, VDD = 3 V, fRF = 915 MHz (unless otherwise noted). Measured on CC1190EM reference design including external matching components optimized for 915 MHz operation.
Copyright © 2009–2010, Texas Instruments Incorporated
CC1190
SWRS089 A – NOVEMBER 2009 – REVISED FEBRUARY 2010
ELECTRICAL CHARACTERISTICS (continued)
DEVICE CC1190RGVR CC1190RGVT
ORDERING INFORMATION
TEMPERATURE
PACKAGE (1)
-40°C to 85°C
QFN (RVG) 16
TRANSPORTION MEDIA Tape and Reel, 2500 Tape and Reel, 250
HGM, LNA_EN, PA_EN
0.3 V
Power down → Receive mode, switching time
300
ns
Power down → Transmit mode, switching time
600
ns
2
Submit Documentation Feedback
Product Folder Link(s) :CC1190
CC1190
SWRS089 A – NOVEMBER 2009 – REVISED FEBRUARY 2010
850 – 950 MHz RF Front End
Check for Samples: CC1190
FEATURES
1
• Seamless Interface to Sub-1 GHz Low Power RF Devices from Texas Instruments
EN
PREAMP
EN
TR_SW LNA_IN
BIAS BIAS
LNA
EN
HGM
LOGIC
PA_IN
LNA_OUT PA_EN LNA_EN
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
3
mA
26
µA
302
56
mA
No input signal, HGM = 0
29
Power down current
LNA_EN = PA_EN = 0
50
200 nA
High input level (control pins)
HGM, LNA_EN, PA_EN
1.3
VDD V
Low input level (control pins)
CC1190 provides an efficient and easy-to-use range extender in a compact 4-mm × 4-mm QFN-16 package.
CC1190 BLOCK DIAGRAM
VDD_LNA VDD_PA1 VDD_PA2
PA_OUT
PA
ABSOLUTE MAXIMUM RATINGS
Under no circumstances must the absolute maximum ratings be violated. Stress exceeding one or more of the limiting values may cause permanent damage to the device.
CC1190 integrates a power amplifier (PA), a low-noise amplifier (LNA), switches, and RF matching for the design of a high-performance wireless systems.
1000
V
RECOMMENDED OPERATING CONDITIONS
Ambient temperature range Operating supply voltage Operating frequency range
Mห้องสมุดไป่ตู้N
MAX
UNIT
–40
85
°C
2
3.7
V
850
950
MHz
ELECTRICAL CHARACTERISTICS
APPLICATIONS
• 850 - 950 MHz ISM Bands Wireless Systems • Wireless Sensor Networks • Wireless Industrial Systems • IEEE 802.15.4 Systems • Wireless Consumer Systems • Wireless Metering (AMR/AMI) Systems • Smart Grid Wireless Networks
Copyright © 2009–2010, Texas Instruments Incorporated
CC1190
SWRS089 A – NOVEMBER 2009 – REVISED FEBRUARY 2010
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
RF Receive
Gain Gain variation over frequency Gain variation over power supply
Noise figure
PIN = -40 dBm, HGM = 1 PIN = -40 dBm, HGM = 0 850–950 MHz, PIN = -40 dBm, HGM = 1 2 – 3.7 V, PIN = -40 dBm, HGM = 1 HGM = 1, including internal switch and external antenna match
CC1190 increases the link budget by providing a power amplifier for increased output power, and an LNA with low noise figure for improved receiver sensitivity.
HGM = 0, including internal switch and external antenna match
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
DESCRIPTION
CC1190 is a cost-effective and high-performance RF Front End for low-power and low-voltage wireless applications at 850 - 950 MHz.
CC1190 is a range extender for the sub-1 GHz low-power RF transceivers, transmitters, and System-on-Chip devices from Texas Instruments.
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI website at .
TC = 25°C, VDD = 3 V, fRF = 915 MHz (unless otherwise noted). Measured on CC1190EM reference design including external matching components optimized for 915 MHz operation.