第四章MATLAB介绍

Characteristic Curve
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4.1 Power Electronic Device

Thyristor Model in Simulink
The Thyristor block has two input ports (a: anode, g: gate) and two output ports (k:cathode, m: measurement). It also contains a series Rs-Cs snubber circuit that can be connected in parallel with the diode device .
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The Diode block is simulated by a resistor, an inductor, and a DC voltage source connected in series with a switch. The switch operation is controlled by the voltage Vak and the current Iak.
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Expample for Diode
Single-Phase Halfwave Rectifier
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4.1 Power Electronic Device

Simulation Parameters Parameters of Thyristor： Ron=0.001Ω, Lon=0H, Vf=0.8V, Rs=20Ω, Cs=4e-6F RL Load： R=1Ω, L=0.001H
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Parameter Configuration
Resistance Ron： 内阻 Inductance Lon ：内感 Forward voltage Vf: 正向管压降 Initial current Ic：初始电流 Snubber resistance Rs：缓冲电阻 Snubber capacitance Cs：缓冲电容

Simulation Results
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4.1 Power Electronic Device
4.1.3 GTO（Gate Turn off Thyristor, 可关断晶闸管）
The gate turn off (GTO) thyristor is a semiconductor device that can be turned on and off via a gate signal. Like a conventional thyristor, the GTO thyristor can be turned on by a positive gate signal (g > 0). However, unlike the thyristor, which can be turned off only at a zero crossing of current, the GTO can be turned off at any time by the application of a gate signal equal to 0.
Iak If g>0, Off to On If g<0, On to Off Vf Vak
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Off State
Characteristic Curve
4.1 Power Electronic Device
Turn off Characteristic of GTO
The current decrease is approximated by two segments. When the gate signal becomes 0, the current Iak first decreases from the value Imax (value of Iak when the GTO thyristor starts to open) to Imax/10, during the fall time (Tf), and then from Imax/10 to 0 during the tail time (Tt). The GTO thyristor turns off when the current Iak becomes 0. The latching and holding currents are not considered.
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GTO Model in Simulink
The GTO block has two input ports (a: anode, g: gate) and two output ports (k:cathode, m: measurement). It also contains a series Rs-Cs snubber circuit that can be connected in parallel with the diode device .
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4.1 Power Electronic Device
The thyristor model is simulated as a resistor Ron, an inductor Lon, and a DC voltage source representing the forward voltage Vf, connected in series with a switch. The switch is controlled by a logical signal depending on the voltage Vak, the current Iak, and the gate signal g.
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4.1 Power Electronic Device

Expample for Diode
Simulation Results
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4.1 Power Electronic Device
4.1.2 Thyristor（晶闸管） The thyristor is a semiconductor device that can be turned on via a gate signal. The thyristor device turns on when the anode-cathode Vak voltage is greater than Vf and a positive pulse signal is applied at the gate input (g > 0). The pulse height must be greater than 0 and last long enough to allow the thyristor anode current to become larger than the latching current Il.
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4.1 Power Electronic Device

Parameter Configuration
Resistance Ron： 内阻 Inductance Lon ：内感 Forward voltage Vf: 正向管压降 Current 10% fall time: 电流下降时间 Current tail time: 电流拖尾时间 Initial current Ic：初始电流 Snubber resistance Rs：缓冲电阻 Snubber capacitance Cs：缓冲电容
电气工程仿真与计算
Electrical Engineering Simulation and Computation
电气工程与自动化学院
Chapter 4 电力电子应用技术 Power Electronics Application
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4.1.1 Diode（二极管） The diode is a semiconductor device that is controlled by its own voltage Vak and current Iak. When a diode is forward biased (Vak > 0), it starts to conduct with a small forward voltage Vf across it. It turns off when the current flow into the device becomes 0. When the diode is reverse biased (Vak < 0), it stays in the off Iak state.
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4.1 Power Electronic Device

Parameter Configuration
Resistance Ron： 内阻 Inductance Lon ：内感 Forward voltage Vf: 正向管压降 Latching Current I1: 闭锁电流 Turn-off Time Tq: 关断时间 Initial current Ic：初始电流 Snubber resistance Rs：缓冲电阻 Snubber capacitance Cs：缓冲电容
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4.1 Power Electronic Device
The GTO model is simulated as a resistor Ron, an inductor Lon, and a DC voltage source representing the forward voltage Vf, connected in series with a switch. The switch is controlled by a logical signal depending on the voltage Vak, the current Iak, and the gate signal g.
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4.1 Power Electronic Device

Expample for Thyristor
Single-Phase Halfwave Rectifier
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4.1 Power Electronic Device

Simulation Parameters Parameters of Thyristor： Ron=0.001Ω, Lon=0H, Vf=0.8V, Rs=20Ω, Cs=4e-6F RL Load： R=1Ω, L=0.01H
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4.1 Power Electronic Device

Simulation Results
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4.1 Power Electronic Device
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Load Parallel Connected with a antiparallel FlyWheel Diode
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Slope=1/RON Off State Vf On state Vak
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Characteristic Curve
4.1 Power Electronic Device

Diode Model in Simulink
The Diode block has one input port (a: anode) and two output ports (k:cathode, m: measurement). It also contains a series Rs-Cs snubber circuit that can be connected in parallel with the diode device .