半导体工艺中的英语词汇..

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半导体行业英文术语

半导体行业英文术语

半导体行业英文术语English:Some common terms in the semiconductor industry include:1. Integrated Circuit (IC): A small electronic device made out of a semiconductor material that can perform an extensive range of functions.2. Semiconductor manufacturing: The process of creating integrated circuits and semiconductor devices, including design, fabrication, and packaging.3. Wafer: A thin slice of semiconductor material used as the substrate for the fabrication of integrated circuits.4. Photolithography: A process used to transfer circuit patterns onto the wafer surface using light and photoresist materials.5. Die: A single piece of an integrated circuit, typically cut from a wafer after fabrication and packaging.6. Yield: The percentage of functional and operational semiconductor devices produced during the manufacturing process.7. Moore's Law: The observation that the number of transistors in a dense integrated circuit doubles approximately every two years, leading to exponential growth in processing power.8. Quantum tunneling: A phenomenon in which electrons penetrate through a potential barrier they classically shouldn't be able to cross, crucial for the operation of semiconductor devices.中文翻译:半导体行业的一些常见术语包括:1. 集成电路(IC):由半导体材料制成的小型电子器件,可执行广泛的功能。

半导体微电子专业词汇中英文对照

半导体微电子专业词汇中英文对照

半导体微电子专业词汇中英文对照Accelerated testing 加速实验Acceptor 受主Acceptor atom 受主原子Accumulation 积累、堆积Accumulating contact 积累接触Accumulation region 积累区Accumulation layer 积累层Acoustic Surface Wave 声表面波Active region 有源区Active component 有源元Active device 有源器件Activation 激活Activation energy 激活能Active region 有源(放大)区A/D conversion 模拟—数字转换Adhesives 粘接剂Admittance 导纳Aging 老化Airborne 空载Allowed band 允带allowance 容限,公差Alloy-junction device合金结器件Aluminum(Aluminum)铝Aluminum – oxide 铝氧化物Aluminum Nitride 氮化铝Aluminum passivation 铝钝化Ambipolar 双极的Ambient temperature 环境温度A M light 振幅调制光,调幅光amplitude limiter 限幅器Amorphous 无定形的,非晶体的Amplifier 功放放大器Analogue(Analog) comparator 模拟比较器Angstrom 埃Anneal 退火Anisotropic 各向异性的Anode 阳极Antenna 天线Aperture 孔径Arsenide (As) 砷Array 阵列Atomic 原子的Atom Clock 原子钟Attenuation 衰减Audio 声频Auger 俄歇Automatic 自动的Automotive 汽车的Availability 实用性Avalanche 雪崩Avalanche breakdown 雪崩击穿Avalanche excitation雪崩激发Background carrier 本底载流子Background doping 本底掺杂Backward 反向Backward bias 反向偏置Ball bond 球形键合Band 能带Band gap 能带间隙Bandwidth 带宽Bar 巴条发光条Barrier 势垒Barrier layer 势垒层Barrier width 势垒宽度Base 基极Base contact 基区接触Base stretching 基区扩展效应Base transit time 基区渡越时间Base transport efficiency基区输运系数Base—width modulation基区宽度调制Batch 批次Battery 电池Beam 束光束电子束Bench 工作台Bias 偏置Bilateral switch 双向开关Binary code 二进制代码Binary compound semiconductor 二元化合物半导体Bipolar 双极性的Bipolar Junction Transistor (BJT)双极晶体管Bit 位比特Blocking band 阻带Body — centered 体心立方Body—centred cubic structure 体立心结构Boltzmann 波尔兹曼Bond 键、键合Bonding electron 价电子Bonding pad 键合点Boron 硼Borosilicate glass 硼硅玻璃Bottom-up 由下而上的Boundary condition 边界条件Bound electron 束缚电子Bragg effect 布拉格效应Breadboard 模拟板、实验板Break down 击穿Break over 转折Brillouin 布里渊FBrillouin zone 布里渊区Buffer 缓冲器Built-in 内建的Build—in electric field 内建电场Bulk 体/体内Bulk absorption 体吸收Bulk generation 体产生Bulk recombination 体复合Burn-in 老化Burn out 烧毁Buried channel 埋沟Buried diffusion region 隐埋扩散区Bus 总线Calibration 校准,检定,定标、刻度,分度Capacitance 电容Capture cross section 俘获截面Capture carrier 俘获载流子Carbon dioxide (CO2) 二氧化碳Carrier 载流子、载波Carry bit 进位位Cascade 级联Case 管壳Cathode 阴极Cavity 腔体Center 中心Ceramic 陶瓷(的)Channel 沟道Channel breakdown 沟道击穿Channel current 沟道电流Channel doping 沟道掺杂Channel shortening 沟道缩短Channel width 沟道宽度Characteristic impedance 特征阻抗Charge 电荷、充电Charge-compensation effects 电荷补偿效应Charge conservation 电荷守恒Charge drive/exchange/sharing/transfer/storage 电荷驱动/交换/共享/转移/存储Chemical etching 化学腐蚀法Chemically—Polish 化学抛光Chemically—Mechanically Polish (CMP)化学机械抛光Chemical vapor deposition (cvd)化学汽相淀积Chip 芯片Chip yield 芯片成品率Circuit 电路Clamped 箝位Clamping diode 箝位二极管Cleavage plane 解理面Clean 清洗Clock rate 时钟频率Clock generator 时钟发生器Clock flip—flop 时钟触发器Close—loop gain 闭环增益Coating 涂覆涂层Coefficient of thermal expansion 热膨胀系数Coherency 相干性Collector 集电极Collision 碰撞Compensated OP-AMP 补偿运放Common-base/collector/emitter connection 共基极/集电极/发射极连接Common—gate/drain/source connection 共栅/漏/源连接Common—mode gain 共模增益Common-mode input 共模输入Common—mode rejection ratio (CMRR) 共模抑制比Communication 通信Compact 致密的Compatibility 兼容性Compensation 补偿Compensated impurities 补偿杂质Compensated semiconductor 补偿半导体Complementary Darlington circuit 互补达林顿电路Complementary Metal-Oxide-SemiconductorField-Effect-Transistor(CMOS)互补金属氧化物半导体场效应晶体管Computer-aided design (CAD)/test(CAT)/manufacture(CAM)计算机辅助设计/ 测试/制造Component 元件Compound Semiconductor 化合物半导体Conductance 电导Conduction band (edge)导带(底)Conduction level/state 导带态Conductor 导体Conductivity 电导率Configuration 结构Conlomb 库仑Constants 物理常数Constant energy surface 等能面Constant-source diffusion恒定源扩散Contact 接触Continuous wave 连续波Continuity equation 连续性方程Contact hole 接触孔Contact potential 接触电势Controlled 受控的Converter 转换器Conveyer 传输器Cooling 冷却Copper interconnection system 铜互连系统Corrosion 腐蚀Coupling 耦合Covalent 共阶的Crossover 交叉Critical 临界的Cross—section 横断面Crucible坩埚Cryogenic cooling system 冷却系统Crystal defect/face/orientation/lattice 晶体缺陷/晶面/晶向/晶格Cubic crystal system 立方晶系Current density 电流密度Curvature 曲率Current drift/drive/sharing 电流漂移/驱动/共享Current Sense 电流取样Curve 曲线Custom integrated circuit 定制集成电路Cut off 截止Cylindrical 柱面的Czochralshicrystal 直立单晶Czochralski technique 切克劳斯基技术(Cz法直拉晶体J))Dangling bonds 悬挂键Dark current 暗电流Dead time 空载时间Decade 十进制Decibel (dB)分贝Decode 解码Deep acceptor level 深受主能级Deep donor level 深施主能级Deep energy level 深能级Deep impurity level 深度杂质能级Deep trap 深陷阱Defeat 缺陷Degenerate semiconductor 简并半导体Degeneracy 简并度Degradation 退化Degree Celsius(centigrade)/Kelvin 摄氏/开氏温度Delay 延迟Density 密度Density of states 态密度Depletion 耗尽Depletion approximation 耗尽近似Depletion contact 耗尽接触Depletion depth 耗尽深度Depletion effect 耗尽效应Depletion layer 耗尽层Depletion MOS 耗尽MOS Depletion region 耗尽区Deposited film 淀积薄膜Deposition process 淀积工艺Design rules 设计规则Detector 探测器Developer 显影剂Diamond 金刚石Die 芯片(复数dice)Diode 二极管Dielectric Constant 介电常数Dielectric isolation 介质隔离Difference-mode input 差模输入Differential amplifier 差分放大器Differential capacitance 微分电容Diffusion 扩散Diffusion coefficient 扩散系数Diffusion constant 扩散常数Diffusivity 扩散率Diffusion capacitance/barrier/current/furnace 扩散电容/势垒/电流/炉Digital circuit 数字电路Dimension (1)尺寸(2)量钢(3)维,度Diode 二极管Dipole domain 偶极畴Dipole layer 偶极层Direct—coupling 直接耦合Direct—gap semiconductor 直接带隙半导体Direct transition 直接跃迁Directional antenna 定向天线Discharge 放电Discrete component 分立元件Disorder 无序的Display 显示器Dissipation 耗散Dissolution 溶解Distributed capacitance 分布电容Distributed model 分布模型Displacement 位移Dislocation 位错Domain 畴Donor 施主Donor exhaustion 施主耗尽Dopant 掺杂剂Doped semiconductor 掺杂半导体Doping concentration 掺杂浓度Dose 剂量Double—diffusive MOS(DMOS)双扩散MOS Drift 漂移Drift field 漂移电场Drift mobility 迁移率Dry etching 干法腐蚀Dry/wet oxidation 干/湿法氧化Dose 剂量Dual—polarization 双偏振,双极化Duty cycle 工作周期Dual-in-line package (DIP) 双列直插式封装Dynamics 动态Dynamic characteristics 动态属性Dynamic impedance 动态阻抗Early effect 厄利效应Early failure 早期失效Effect 效应Effective mass 有效质量Electric Erase Programmable Read Only Memory(E2PROM) 电可擦除只读存储器Electrode 电极Electromigration 电迁移Electron affinity 电子亲和势Electron-beam 电子束Electroluminescence 电致发光Electron gas 电子气Electron trapping center 电子俘获中心Electron Volt (eV) 电子伏Electro—optical 光电的Electrostatic 静电的Element 元素/元件/配件Elemental semiconductor 元素半导体Ellipse 椭圆Emitter 发射极Emitter—coupled logic 发射极耦合逻辑Emitter-coupled pair 发射极耦合对Emitter follower 射随器Empty band 空带Emitter crowding effect 发射极集边(拥挤)效应Endurance test =life test 寿命测试Energy state 能态Energy momentum diagram 能量-动量(E—K)图Enhancement mode 增强型模式Enhancement MOS 增强性MOSEnteric (低)共溶的Environmental test 环境测试Epitaxial 外延的Epitaxial layer 外延层Epitaxial slice 外延片Epoxy 环氧的Equivalent circuit 等效电路Equilibrium majority /minority carriers 平衡多数/少数载流子Equipment 设备Erasable Programmable ROM (EPROM)可搽取(编程)存储器Erbium laser 掺铒激光器Error function complement 余误差函数Etch 刻蚀Etchant 刻蚀剂Etching mask 抗蚀剂掩模Excess carrier 过剩载流子Excitation energy 激发能Excited state 激发态Exciton 激子Exponential 指数的Extrapolation 外推法Extrinsic 非本征的Extrinsic semiconductor 杂质半导体Fabry—Perot amplifier 法布里-珀罗放大器Face — centered 面心立方Fall time 下降时间Fan-in 扇入Fan—out 扇出Fast recovery 快恢复Fast surface states 快表面态Feedback 反馈Fermi level 费米能级Femi potential 费米势Fiber optic 光纤Field effect transistor 场效应晶体管Field oxide 场氧化层Figure of merit 品质因数Filter 滤波器Filled band 满带Film 薄膜Fine pitch 细节距Flash memory 闪存存储器Flat band 平带Flat pack 扁平封装Flatness 平整度Flexible 柔性的Flicker noise 闪烁(变)噪声Flip-chip 倒装芯片Flip— flop toggle 触发器翻转Floating gate 浮栅Fluoride etch 氟化氢刻蚀Focal plane 焦平面Forbidden band 禁带Formulation 列式,表达Forward bias 正向偏置Forward blocking /conducting 正向阻断/导通Free electron 自由电子Frequency deviation noise 频率漂移噪声Frequency response 频率响应Function 函数Gain 增益Gallium—Arsenide(GaAs) 砷化镓Gallium Nitride 氮化镓Gate 门、栅、控制极Gate oxide 栅氧化层Gate width 栅宽Gauss(ian)高斯Gaussian distribution profile 高斯掺杂分布Generation-recombination 产生-复合Geometries 几何尺寸Germanium(Ge) 锗Gold 金Graded 缓变的Graded (gradual) channel 缓变沟道Graded junction 缓变结Grain 晶粒Gradient 梯度Graphene 石墨烯Grating 光栅Green laser 绿光激光器Ground 接地Grown junction 生长结Guard ring 保护环Guide wave 导波波导Gunn — effect 狄氏效应Gyroscope 陀螺仪Hardened device 辐射加固器件Harmonics 谐波Heat diffusion 热扩散Heat sink 散热器、热沉Heavy/light hole band 重/轻空穴带Hell — effect 霍尔效应Hertz 赫兹Heterojunction 异质结Heterojunction structure 异质结结构Heterojunction Bipolar Transistor(HBT)异质结双极型晶体High field property 高场特性High—performance MOS(H—MOS)高性能MOS器件High power 大功率Hole 空穴Homojunction 同质结Horizontal epitaxial reactor 卧式外延反应器Hot carrier 热载流子Hybrid integration 混合集成Illumination (1)照明(2)照明学Image - force 镜象力Impact ionization 碰撞电离Impedance 阻抗Imperfect structure 不完整结构Implantation dose 注入剂量Implanted ion 注入离子Impurity 杂质Impurity scattering 杂志散射Inch 英寸Incremental resistance 电阻增量(微分电阻)In—contact mask 接触式掩模Index of refraction 折射率Indium 铟Indium tin oxide (ITO)铟锡氧化物Inductance 电感Induced channel 感应沟道Infrared 红外的Injection 注入Input power 输入功率Insertion loss 插入损耗Insulator 绝缘体Insulated Gate FET(IGFET) 绝缘栅FET Integrated injection logic 集成注入逻辑Integration 集成、积分Integrated Circuit 集成电路Interconnection 互连Interconnection time delay 互连延时Interdigitated structure 交互式结构Interface 界面Interference 干涉International system of unions 国际单位制Internally scattering 谷间散射Interpolation 内插法Intrinsic 本征的Intrinsic semiconductor 本征半导体Inverse operation 反向工作Inversion 反型Inverter 倒相器Ion 离子Ion beam 离子束Ion etching 离子刻蚀Ion implantation 离子注入Ionization 电离Ionization energy 电离能Irradiation 辐照Isolation land 隔离岛Isotropic 各向同性Junction FET(JFET) 结型场效应管Junction isolation 结隔离Junction spacing 结间距Junction side—wall 结侧壁Laser 激光器Laser diode 激光二极管Latch up 闭锁Lateral 横向的Lattice 晶格Layout 版图Lattice binding/cell/constant/defect/distortion 晶格结合力/晶胞/晶格/晶格常熟/晶格缺陷/晶格畸变Lead 铅Leakage current (泄)漏电流Life time 寿命linearity 线性度Linked bond 共价键Liquid Nitrogen 液氮Liquid-phase epitaxial growth technique 液相外延生长技术Lithography 光刻Light Emitting Diode(LED) 发光二极管Linearity 线性化Liquid 液体Lock in 锁定Longitudinal 纵向的Long life 长寿命Lumped model 集总模型Magnetic 磁的Majority carrier 多数载流子Mask 掩膜板,光刻板Mask level 掩模序号Mask set 掩模组Mass — action law 质量守恒定律Master-slave D flip-flop 主从D 触发器Matching 匹配Material 材料Maxwell 麦克斯韦Mean free path 平均自由程Mean time before failure (MTBF)平均工作时间Mechanical 机械的Membrane (1)薄腊,膜片(2)隔膜Megeto — resistance 磁阻Mesa 台面MESFET-Metal Semiconductor 金属半导体FET Metalorganic Chemical Vapor Deposition MOCVD 金属氧化物化学汽相淀积Metallization 金属化Metal oxide semiconductor (MOS)金属氧化物半导体MeV 兆电子伏Microelectronic technique 微电子技术Microelectronics 微电子学Microelectromechanical System (MEMS)微电子机械系统Microwave 微波Millimeterwave 毫米波Minority carrier 少数载流子Misfit 失配Mismatching 失配Mobility 迁移率Module 模块Modulate 调制Molecular crystal 分子晶体Monolithic IC 单片MOSFET 金属氧化物半导体场效应晶体管Mount 安装Multiplication 倍增Modulator 调制Multi—chip IC 多芯片ICMulti—chip module(MCM) 多芯片模块Multilayer 多层Multiplication coefficient 倍增因子Multiplexer 复用器Multiplier 倍增器Naked chip 未封装的芯片(裸片) Nanometer 纳米Nanotechnology 纳米技术Negative feedback 负反馈Negative resistance 负阻Negative—temperature-coefficient负温度系数Nesting 套刻Noise figure 噪声系数Nonequilibrium 非平衡Nonvolatile 非挥发(易失)性Normally off/on 常闭/开Nuclear 核Numerical analysis 数值分析Occupied band 满带Offset 偏移、失调On standby 待命状态Ohmic contact 欧姆接触Open circuit 开路Operating point 工作点Operating bias 工作偏置Operational amplifier (OPAMP)运算放大器Optical photon 光子Optical quenching 光猝灭Optical transition 光跃迁Optical—coupled isolator 光耦合隔离器Organic semiconductor 有机半导体Orientation 晶向、定向Oscillator 振荡器Outline 外形Out—of—contact mask 非接触式掩模Output characteristic 输出特性Output power 输出功率Output voltage swing 输出电压摆幅Overcompensation 过补偿Over-current protection 过流保护Over shoot 过冲Over—voltage protection 过压保护Overlap 交迭Overload 过载Oscillator 振荡器Oxide 氧化物Oxidation 氧化Oxide passivation 氧化层钝化Package 封装Pad 压焊点Parameter 参数Parasitic effect 寄生效应Parasitic oscillation 寄生振荡Pass band 通带Passivation 钝化Passive component 无源元件Passive device 无源器件Passive surface 钝化界面Parasitic transistor 寄生晶体管Pattern 图形Payload 有效载荷Peak-point voltage 峰点电压Peak voltage 峰值电压Permanent—storage circuit 永久存储电路Period 周期Permeable — base 可渗透基区Phase—lock loop 锁相环Phase drift 相移Phonon spectra 声子谱Photo conduction 光电导Photo diode 光电二极管Photoelectric cell 光电池Photoelectric effect 光电效应Photonic devices 光子器件Photolithographic process 光刻工艺Photoluminescence 光致发光Photo resist (光敏)抗腐蚀剂Photo mask 光掩模Piezoelectric effect 压电效应Pin 管脚Pinch off 夹断Pinning of Fermi level 费米能级的钉扎(效应)Planar process 平面工艺Planar transistor 平面晶体管Plasma 等离子体Plane 平面的Plasma 等离子体Plate 板电路板P-N junction pn结Poisson equation 泊松方程Point contact 点接触Polarity 极性Polycrystal 多晶Polymer semiconductor 聚合物半导体Poly—silicon 多晶硅Positive 正的Potential (电)势Potential barrier 势垒Potential well 势阱Power electronic devices电力电子器件Power dissipation 功耗Power transistor 功率晶体管Preamplifier 前置放大器Primary flat 主平面Print-circuit board(PCB)印制电路板Probability 几率Probe 探针Procedure 工艺Process 工艺Projector 投影仪Propagation delay 传输延时Proton 质子Proximity effect 邻近效应Pseudopotential method 赝势法Pump 泵浦Punch through 穿通Pulse triggering/modulating 脉冲触发/调制Pulse Widen Modulator(PWM) 脉冲宽度调制Punchthrough 穿通Push—pull stage 推挽级Q Q值Quality factor 品质因子Quantization 量子化Quantum 量子Quantum efficiency 量子效应Quantum mechanics 量子力学Quasi – Fermi-level 准费米能级Quartz 石英Radar 雷达Radiation conductivity 辐射电导率Radiation damage 辐射损伤Radiation flux density 辐射通量密度Radiation hardening 辐射加固Radiation protection 辐射保护Radiative — recombination 辐照复合Radio 无线电射电射频Radio-frequency RF 射频Raman 拉曼Random 随机Range 测距Radio 比率系数Ray 射线Reactive sputtering source 反应溅射源Real time 实时Receiver 接收机Recombination 复合Recovery diode 恢复二极管Record 记录Recovery time 恢复时间Rectifier 整流器(管)Rectifying contact 整流接触Red light 红光Reference 基准点基准参考点Refractive index 折射率Register 寄存器Regulate 控制调整Relative 相对的Relaxation 驰豫Relaxation lifetime 驰豫时间Relay 中继Reliability 可靠性Remote 远程Repeatability 可重复性Reproduction 重复制造Residual current 剩余电流Resonance 谐振Resin 树脂Resistance 电阻Resistor 电阻器Resistivity 电阻率Regulator 稳压管(器) Resolution 分辨率Response time 响应时间Return signal 回波信号Reverse 反向的Reverse bias 反向偏置Ribbon 光纤带Ridge waveguide 脊形波导Ring laser 环形激光器Rotary wave 旋转波Run 运行Sampling circuit 取样电路Sapphire 蓝宝石(Al2O3)Satellite valley 卫星谷Saturated current range 电流饱和区Scan 扫描Scaled down 按比例缩小Schematic layout 示意图,简图Schottky 肖特基Schottky barrier 肖特基势垒Schottky contact 肖特基接触Screen 筛选Scribing grid 划片格Secondary flat 次平面Seed crystal 籽晶Segregation 分凝Selectivity 选择性Self aligned 自对准的Self diffusion 自扩散Semiconductor 半导体Semiconductor laser半导体激光器Semiconductor—controlled rectifier 半导体可控硅Sensitivity 灵敏度Sensor 传感器Serial 串行/串联Series inductance 串联电感Settle time 建立时间Sheet resistance 薄层电阻Shield 屏蔽Shifter 移相器Short circuit 短路Shot noise 散粒噪声Shunt 分流Sidewall capacitance 边墙电容Signal 信号Silica glass 石英玻璃Silicon 硅Silicon carbide 碳化硅Silicon dioxide (SiO2)二氧化硅Silicon Nitride(Si3N4) 氮化硅Silicon On Insulator 绝缘体上硅Silver whiskers 银须Simple cubic 简立方Simulation 模拟Single crystal 单晶Sink 热沉Sinter 烧结Skin effect 趋肤效应Slot 槽隙Slow wave 慢波Smooth 光滑的Subthreshold 亚阈值的Solar battery/cell 太阳能电池Solid circuit 固体电路Solid Solubility 固溶度Solution 溶液Sonband 子带Source 源极Source follower 源随器Space charge 空间电荷Space Craft 宇宙飞行器Spacing 间距Specific heat(PT) 比热Spectral 光谱Spectrum 光谱(复数)Speed-power product 速度功耗乘积Spherical 球面的Spin 自旋Split 分裂Spontaneous emission 自发发射Spot 斑点Spray 喷涂Spreading resistance 扩展电阻Sputter 溅射Square root 平方根Stability 稳定性Stacking fault 层错Standard 标准的Standing wave 驻波State-of-the-art 最新技术Static characteristic 静态特性Statistical analysis 统计分析Steady state 稳态Step motor 步进式电动机Stimulated emission 受激发射Stimulated recombination 受激复合Stopband 阻带Storage time 存储时间Stress 应力Stripline 带状线Subband 次能带Sublimation 升华Submillimeter 亚毫米波Substrate 衬底Substitutional 替位式的Superconductor 超导(电)体Superlattice 超晶格Supply 电源Surface mound表面安装Surge capacity 浪涌能力Switching time 开关时间Switch 开关Synchronizer 同步器,同步装置Synthetic-aperture 合成孔径System 系统Technical 技术的,工艺的Telecommunication 远距通信,电信Telescope 望远镜Terahertz 太赫兹Terminal 终端Template 模板Temperature 温度Tensor 张量Test 测试试验Thermal activation 热激发Thermal conductivity 热导率Thermal equilibrium 热平衡Thermal Oxidation 热氧化Thermal resistance 热阻Thermal sink 热沉Thermal velocity 热运动Thick— film technique 厚膜技术Thin- film hybrid IC 薄膜混合集成电路Thin-Film Transistor(TFT) 薄膜晶体Three dimension 三维Threshold 阈值Through Silicon Via 硅通孔Thyistor 晶闸管Time resolution 时间分辨率Tolerance 公差T/R module 发射/接收模块Transconductance 跨导Transfer characteristic 转移特性Transfer electron 转移电子Transfer function 传输函数Transient 瞬态的Transistor aging(stress) 晶体管老化Transit time 渡越时间Transition 跃迁Transition—metal silica 过度金属硅化物Transition probability 跃迁几率Transition region 过渡区Transmissivity 透射率Transmitter 发射机Transceiver 收发机Transport 输运Transverse 横向的Trap 陷阱Trapping 俘获Trapped charge 陷阱电荷Travelling wave 行波Trigger 触发Trim 调配调整Triple diffusion 三重扩散Tolerance 容差Tube 管子电子管Tuner 调节器Tunnel(ing) 隧道(穿)Tunnel current 隧道电流Turn - off time 关断时间Ultraviolet 紫外的Ultrabright 超亮的Ultrasonic 超声的Underfilling 下填充Undoped 无掺杂Unijunction 单结的Unipolar 单极的Unit cell 原(元)胞Unity— gain frequency 单位增益频率Unilateral-switch 单向开关Vacancy 空位Vacuum 真空Valence(value) band 价带Value band edge 价带顶Valence bond 价键Vapour phase 汽相Varactor 变容管Variable 可变的Vector 矢量Vertical 垂直的Vibration 振动Visible light 可见光Voltage 电压Volt 伏特Wafer 晶片Watt 瓦Wave guide 波导Wavelength 波长Wave-particle duality 波粒二相性Wear-out 烧毁Wetting 浸润Wideband 宽禁带Wire 引线Wire routing 布线Work function 功函数Worst-case device 最坏情况器件X-ray X射线Yield 成品率Zinc 锌。

半导体工艺中的英语词汇

半导体工艺中的英语词汇

AAbrupt jun ction 突变结Accelerated test ing 加速实验Acceptor 受主Acceptor atom 受主原子Accumulatio n 积累、堆积Accumulat ing con tact 积累接触Accumulation region 积累区Accumulation layer 积累层Active region 有源区Active component 有源元Active device 有源器件Activati on 激活Activation energy 激活能Active region 有源(放大)区Admittanee 导纳Allowed band 允带Alloy-junction device 合金结器件Aluminum (Aluminium )铝Aluminum - oxide 铝氧化物Aluminum passivation 铝钝化Ambipolar 双极的Ambient temperature 环境温度Amorphous无定形的,非晶体的Amplifier功放扩音器放大器Analogue (Analog)comparator 模拟比较器Angstrom 埃Anneal退火Anisotropic 各向异性的An ode 阳极Arse nic (AS)砷Auger俄歇Auger process 俄歇过程Avalanche 雪崩Avalanche breakdown 雪崩击穿Avala nche excitati on 雪崩激发BBackgro und carrier 本底载流子Backgro und dop ing 本底掺杂Backward 反向Backward bias 反向偏置Ballasti ng resistor 整流电阻Ball bo nd 球形键合Band能带Ba nd gap 能带间隙Barrier 势垒Barrier layer 势垒层Barrier width 势垒宽度Base基极Base con tact 基区接触Base stretchi ng 基区扩展效应Base tran sit time 基区渡越时间Base tran sport efficie ncy 基区输运系数Base-width modulation 基区宽度调制Basis vector 基矢Bias 偏置Bilateral switch 双向开关Binary code 二进制代码Binary compo und semic on ductor 二元化合物半导体Bipolar 双极性的Bipolar Junction Transistor (BJT)双极晶体管Bloch布洛赫Blocki ng ba nd 阻挡能带Blocki ng con tact 阻挡接触Body - cen tered 体心立方Body-ce ntred cubic structure 体立心结构Boltzma nn 波尔兹曼Bond 键、键合Bonding electron 价电子Bonding pad 键合点Bootstrap circuit 自举电路Bootstrapped emitter follower 自举射极跟随器Boron 硼Borosilicate glass 硼硅玻璃Bou ndary con diti on 边界条件Bou nd electro n 束缚电子Breadboard 模拟板、实验板Break down 击穿Break over 转折Brillouin 布里渊Brillouin zone 布里渊区Built- in 内建的Build-in electric field 内建电场Bulk 体/体内Bulk absorption 体吸收Bulk gen erati on 体产生Bulk recomb in ati on 体复合Burn - in 老化Burn out 烧毁Buried channel 埋沟Buried diffusion region 隐埋扩散区CCan 外壳Capacitanee 电容Capture cross sectio n 俘获截面Capture carrier 俘获载流子Carrier载流子、载波Carry bit进位位Carry-in bit 进位输入Carry-out bit 进位输出Cascade级联Case管壳Cathode 阴极Center 中心Ceramic 陶瓷(的)Channel 沟道Channel breakdow n 沟道击穿Channel curre nt 沟道电流Channel dop ing 沟道掺杂Channel shorte ning 沟道缩短Channel width 沟道宽度Characteristic impeda nee 特征阻抗Charge 电荷、充电Charge-compensation effects 电荷补偿效应Charge conservation 电荷守恒Charge neutrality condition 电中性条件Charge drive/exchange/sharing/transfer/storage 电荷驱动/ 交换/ 共享/转移/存储Chemmical etchi ng 化学腐蚀法Chemically-Polish 化学抛光Chemmically-Mechanically Polish (CMP)化学机械抛光Chip 芯片Chip yield芯片成品率Clamped箝位Clampi ng diode 箝位二极管Cleavage pla ne 解理面Clock rate 时钟频率Clock gen erator 时钟发生器Clock flip-flop 时钟触发器Close-packed structure 密堆积结构Close-loop gain 闭环增益Collector 集电极Collision 碰撞Compensated OP-AMP 补偿运放Commo n-base/collector/emitter conn ection 共基极/ 集电极/ 发射极连接Common-gate/dra in/source connection 共栅/ 漏/ 源连接Common-m ode gain 共模增益Common-m ode in put 共模输入Com mon-mode rejectio n ratio (CMRR)共模抑制比Compatibility 兼容性Compensation 补偿Compe nsated impurities 补偿杂质Compe nsated semic on ductor 补偿半导体Compleme ntary Darlington circuit 互补达林顿电路Compleme ntary Metal-Oxide-Semico nductor Field-Effect-Tra nsistor (CMOS)互补金属氧化物半导体场效应晶体管Compleme ntary error fun ctio n 余误差函数Computer-aided design (CAD)/test (CAT)/manufacture (CAM)计算机辅助设计/测试/制造Compo und Semic on ductor 化合物半导体Con ducta nee 电导Con ducti on band (edge)导带(底)Con ducti on level/state 导带态Con ductor 导体Con ductivity 电导率Configuration 组态Conlomb 库仑Con pled Co nfiguration Devices 结构组态Co nsta nts 物理常数Constant energy surface 等能面Constant-source diffusion 恒定源扩散Con tact 接触Co ntami natio n 治污Contin uity equatio n 连续性方程Con tact hole 接触孔Con tact pote ntial 接触电势Con ti nuity con ditio n 连续性条件Co ntra dopi ng 反掺杂Con trolled 受控的Converter转换器Conveyer 传输器Copper interconnection system 铜互连系统Couping 耦合Covale nt 共阶的Crossover 跨交Critical 临界的Crossunder 穿交Crucible 坩埚Crystal defect/face/orientation/lattice 晶体缺陷/ 晶面/ 晶向/ 晶格Curre nt den sity 电流密度Curvature 曲率Cut off 截止Current drift/dirve/sharing 电流漂移/驱动/共享Current Sense 电流取样Curvature 弯曲Custom integrated circuit 定制集成电路Cylindrical 柱面的Czochralshicrystal 直立单晶Czochralski technique 切克劳斯基技术(Cz法直拉晶体J)DDangling bonds 悬挂键Dark current 暗电流Dead time 空载时间Debye len gth 德拜长度De.broglie 德布洛意Decderate 减速Decibel (dB)分贝Decode 译码Deep acceptor level 深受主能级Deep donor level 深施主能级Deep impurity level 深度杂质能级Deep trap 深陷阱Defeat缺陷Dege nerate semic on ductor 简并半导体Dege neracy 简并度Degradation 退化Degree Celsius (centigrade)/Kelvin 摄氏/开氏温度Delay延迟Density 密度Density of states 态密度Depletion 耗尽Depleti on approximati on 耗尽近似Depleti on contact 耗尽接触Depletio n depth 耗尽深度Depletio n effect 耗尽效应Depletion layer 耗尽层Depletion MOS 耗尽MOSDepletion region 耗尽区Deposited film 淀积薄膜Depositi on process 淀积工艺Desig n rules 设计规贝UDie芯片(复数dice)Diode二极管Dielectric 介电的Dielectric isolation 介质隔离Difference-mode in put 差模输入Differe ntial amplifier 差分放大器Differe ntial capacita nee 微分电容Diffused jun ction 扩散结Diffusion 扩散Diffusion coefficient 扩散系数Diffusi on con sta nt 扩散常数Diffusivity 扩散率Diffusion capacitance/barrier/current/furnace 扩散电容/势垒/ 电流/ 炉Digital circuit 数字电路Dipole domai n 偶极畴Dipole layer 偶极层Direct-coupling 直接耦合Direct-gap semic on ductor 直接带隙半导体Direct tran siti on 直接跃迁Discharge 放电Discrete component 分立元件Dissipation 耗散Distribution 分布Distributed capacita nee 分布电容Distributed model 分布模型Displacement 位移Dislocation 位错Domain 畴Donor 施主Don or exhaustion 施主耗尽Dopa nt掺杂剂Doped semic on ductor 掺杂半导体Doping concen trati on 掺杂浓度Double-diffusive MOS (DMOS)双扩散MOS.Drift漂移Drift field 漂移电场Drift mobility 迁移率Dry etching 干法腐蚀Dry/wet oxidation 干/湿法氧化Dose剂量Duty cycle 工作周期Dual-in-line package (DIP)双列直插式圭寸装Dynamics 动态Dynamic characteristics 动态属性Dyn amic impeda nee 动态阻抗EEarly effect 厄利效应Early failure 早期失效Effective mass 有效质量Einstein relation (ship)爱因斯坦关系Electric Erase Programmable Read Only Memory (E2PROM)一次性电可擦除只读存储器Electrode 电极Electrominggratim 电迁移Electr on affinity 电子亲和势Electro nic -grade 电子能Electro n-beam photo-resist exposure 光致抗蚀剂的电子束曝光Electron gas 电子气Electron-grade water 电子级纯水Electro n trappi ng cen ter 电子俘获中心Electro n Volt (eV)电子伏Electrostatic 静电的Element元素/元件/配件Eleme ntal semic on ductor 元素半导体Ellipse 椭圆Ellipsoid 椭球Emitter 发射极Emitter-coupled logic 发射极耦合逻辑Emitter-coupled pair 发射极耦合对Emitter follower 射随器Empty ba nd 空带Emitter crowdi ng effect 发射极集边(拥挤)效应En dura nee test =life test 寿命测试Energy state 能态Energy momentum diagram 能量-动量(E-K)图Enhancement mode 增强型模Enhancement MOS 增强性MOS Entefic (低)共溶的Environmental test 环境测试Epitaxial 外延的Epitaxial layer 夕卜延层Epitaxial slice 夕卜延片Expitaxy 夕卜延Equivale nt curcuit 等效电路Equilibrium majority /minority carriers 平衡多数/ 少数载流子Erasable Programmable ROM (EPROM)可搽取(编程)存储器Error fun cti on compleme nt (erfc) 余误差函数Etch刻蚀Etchant刻蚀剂Etching mask 抗蚀剂掩模Excess carrier 过剩载流子Excitation en ergy 激发能Excited state 激发态Exciton 激子Extrapolation 夕卜推法Extri nsic 非本征的Extri nsic semic on ductor 杂质半导体FFace - centered 面心立方Fall time 下降时间Fan-in 扇入Fan-out 扇出Fast recovery 快恢复Fast surface states 快界面态Feedback反馈Fermi level 费米能级Fermi-Dirac Distribution 费米-狄拉克分布Femi potential 费米势Fick equation 菲克方程(扩散) Field effect tran sistor 场效应晶体管Field oxide 场氧化层Filled band 满带Film 薄膜Flash memory 闪烁存储器Flat band 平带Flat pack 扁平封装Flicker noise 闪烁(变)噪声Flip-flop toggle 触发器翻转Floating gate 浮栅Fluoride etch 氟化氢刻蚀Forbidden band 禁带Forward bias 正向偏置Forward blocking/conducting 正向阻断/导通Freque ncy deviatio n no ise 频率漂移噪声Freque ncy response 频率响应Function 函数GGain 增益Gallium-Arsenide (GaAs)砷化钾Gamy ray r射线Gate门、栅、控制极Gate oxide 栅氧化层Gauss (ian ) 高斯Gaussia n distributi on profile 高斯掺杂分布Gen erati on-recomb in ati on 产生-复合Geometries 几何尺寸Germanium (Ge) 锗Graded 缓变的Graded (gradual ) channel 缓变沟道Graded junction 缓变结Grain 晶粒Gradient 梯度Grown junction 生长结Guard ring 保护环Gummel-Poom model 葛谋-潘模型Gu nn - effect 狄氏效应HHarde ned device 辐射加固器件Heat of formation 形成热Heat sink 散热器、热沉Heavy/light hole band 重/轻空穴带Heavy saturation 重掺杂Hell - effect 霍尔效应Heterojunction 异质结Heterojunction structure 异质结结构Heterojunction Bipolar Transistor (HBT)异质结双极型晶体High field property 高场特性High-performanee MOS. (H-MOS)高性能MOS. Hormalized 归一化Horiz on tal epitaxial reactor 卧式外延反应器Hot carrior 热载流子Hybrid in tegration 混合集成IImage - force 镜象力Impact ioni zati on 碰撞电离Impedanee 阻抗Imperfect structure 不完整结构Impla ntati on dose 注入剂量Impla nted ion 注入离子Impurity 杂质Impurity scattering 杂质散射In creme ntal resista nee 电阻增量(微分电阻)In-co ntact mask 接触式掩模Indium tin oxide (ITO)铟锡氧化物Induced channel 感应沟道Infrared 红外的Injecti on 注入In put offset voltage 输入失调电压In sulator 绝缘体Insulated Gate FET (IGFET)绝缘栅FET Integrated injection logic 集成注入逻辑In tegrati on 集成、积分In terc onnection 互连In terc onnection time delay 互连延时In terdigitated structure 交互式结构In terface 界面In terfere nee 干涉Intern ati onal system of unions 国际单位制Intern ally scatteri ng 谷间散射In terpolati on 内插法In tri nsic 本征的Intrin sic semic on ductor 本征半导体in verse operati on 反向工作Inversion 反型Inverter 倒相器Ion 离子Ion beam 离子束Ion etchi ng 离子刻蚀Ion impla ntatio n 离子注入Ionization 电离Ionization energy 电离能Irradiation 辐照Isolation land 隔离岛Isotropic各向同性JJunction FET (JFET)结型场效应管Junction isolation 结隔离Junction spaci ng 结间距Junction side-wall 结侧壁LLatch up 闭锁Lateral横向的Lattice 晶格Layout 版图Lattice bin di ng/cell/co nsta nt/defect/distortio n 晶格结合力/ 晶胞/ 晶格/ 晶格常熟/晶格缺陷/晶格畸变Leakage curre nt (泄)漏电流Level shifti ng 电平移动Life time 寿命linearity 线性度Li nked bo nd 共价键Liquid Nitroge n 液氮Liquid —phase epitaxial growth tech nique 液相外延生长技术Lithography 光刻Light Emitting Diode (LED)发光二极管Load line or Variable 负载线Locating and Wiring 布局布线Lon gitudi nal 纵向的Logic swi ng 逻辑摆幅Lorentz洛沦兹Lumped model 集总模型MMajority carrier 多数载流子Mask掩膜板,光刻板Mask level掩模序号Mask set掩模组Mass - action law 质量守恒定律Master-slave D flip-flop 主从D 触发器Matchi ng 匹配Maxwell麦克斯韦Mea n free path 平均自由程Mea ndered emitter jun ction 梳状发射极结Mean time before failure (MTBF)平均工作时间Megeto - resista nee 磁阻Mesa 台面MESFET-Metal Semiconductor 金属半导体FETMetallization 金属化Microelectronic technique 微电子技术Microelectro nics 微电子学Mille n in dices 密勒指数Minority carrier 少数载流子Misfit失配Mismatchi ng 失配Mobile ions 可动离子Mobility 迁移率Module 模块Modulate 调制Molecular crystal 分子晶体Monolithic IC 单片IC MOSFET金属氧化物半导体场效应晶体管Mos. Transistor (MOST )MOS.晶体管Multiplication 倍增Modulator 调制Multi-chip IC 多芯片ICMulti-chip module (MCM)多芯片模块Multiplication coefficient 倍增因子NNaked chip未圭寸装的芯片(裸片)Negative feedback 负反馈Negative resista nee 负阻Nesti ng 套刻Negative-temperature-coefficie nt 负温度系数Noise margin 噪声容限Non equilibrium 非平衡No nrolatile 非挥发(易失)性Normally off/on 常闭/开Numerical analysis 数值分析OOccupied band 满带Officienay 功率Offset偏移、失调On standby 待命状态Ohmic con tact 欧姆接触Ope n circuit 开路Operating point 工作点Operating bias 工作偏置Operational amplifier (OPAMP)运算放大器Optical phot on =phot on 光子Optical que nching 光猝灭Optical transition 光跃迁Optical-coupled isolator 光耦合隔离器Organic semic on ductor 有机半导体Orien tati on 晶向、定向Outline 外形Out-of-contact mask 非接触式掩模Output characteristic 输出特性Output voltage swi ng 输出电压摆幅Overcompensation 过补偿Over-current protection 过流保护Over shoot 过冲Over-voltage protection 过压保护Overlap 交迭Overload 过载Oscillator振荡器Oxide氧化物Oxidation 氧化Oxide passivation氧化层钝化PPackage圭寸装Pad压焊点Parameter 参数Parasitic effect 寄生效应Parasitic oscillati on 寄生振荡Pass in ati on 钝化Passive comp onent 无源元件Passive device 无源器件Passive surface 钝化界面Parasitic transistor 寄生晶体管Peak-point voltage 峰点电压Peak voltage 峰值电压Permanent-storage circuit 永久存储电路Period 周期Periodic table 周期表Permeable - base 可渗透基区Phase-lock loop 锁相环Phase drift 相移Phonon spectra 声子谱Photo con duction 光电导Photo diode 光电二极管Photoelectric cell 光电池Photoelectric effect 光电效应Photoe nic devices 光子器件Photolithographic process 光刻工艺(photo)resist (光敏)抗腐蚀剂Pin管脚Pinch off夹断Pinning of Fermi level 费米能级的钉扎(效应)Planar process 平面工艺Pla nar tran sistor 平面晶体管Plasma 等离子体Plezoelectric effect 压电效应Poisson equati on 泊松方程Poi nt con tact 点接触Polarity 极性Polycrystal 多晶Polymer semico nductor 聚合物半导体Poly-silic on 多晶硅Pote ntial (电)势Pote ntial barrier 势垒Potential well 势阱Power dissipation 功耗Power tran sistor 功率晶体管Preamplifier 前置放大器Primary flat 主平面Principal axes 主轴Prin t-circuit board (PCB)印制电路板Probability 几率Probe探针Process工艺Propagati on delay 传输延时Pseudopote ntial method 膺势发Punch through 穿通Pulse triggering/modulating 脉冲触发/调制Pulse Widen Modulator (PWM)脉冲宽度调制punchthrough 穿通Push-pull stage 推挽级QQuality factor 品质因子Qua ntizatio n 量子化Quantum 量子Quantum efficiency 量子效应Quantum mechanics 量子力学Quasi - Fermi —level 准费米能级Quartz 石英RRadiation con ductivity 辐射电导率Radiatio n damage 辐射损伤Radiation flux den sity 辐射通量密度Radiatio n harde ning 辐射加固Radiati on protect ion 辐射保护Radiative - recomb in ati on 辐照复合Radioactive 放射性Reach through 穿通Reactive sputtering source 反应溅射源Read diode 里德二极管Recomb in atio n 复合Recovery diode 恢复二极管Reciprocal lattice 倒核子Recovery time 恢复时间Rectifier 整流器(管)Rectifyi ng con tact 整流接触Referenee 基准点基准参考点Refractive index 折射率Register 寄存器Registration 对准Regulate 控制调整Relaxation lifetime 驰豫时间Reliability 可* 性Resonance 谐振Resista nee 电阻Resistor 电阻器Resistivity 电阻率Regulator 稳压管(器)Relaxation 驰豫Resonant frequency 共射频率Response time 响应时间Reverse 反向的Reverse bias 反向偏置SSampling circuit 取样电路Sapphire 蓝宝石(AI2O3)Satellite valley 卫星谷Saturated current range 电流饱和区Saturatio n regi on 饱和区Saturatio n 饱和的Scaled dow n 按比例缩小Scatteri ng 散射Schockley diode 肖克莱二极管Schottky肖特基Schottky barrier 肖特基势垒Schottky con tact 肖特基接触Schrodingen 薛定厄Scribing grid 划片格Secon dary flat 次平面Seed crystal 籽晶Segregation 分凝Selectivity 选择性Self aligned 自对准的Self diffusion 自扩散Semiconductor 半导体Semic on ductor-c on trolled rectifier 可控硅Sen dsitivity 灵敏度Serial串行/串联Series inductanee 串联电感Settle time 建立时间Sheet resista nee 薄层电阻Shield 屏蔽Short circuit 短路Shot noise散粒噪声Shu nt分流Sidewall capacitanee 边墙电容Signal 信号Silica glass 石英玻璃Silicon 硅Silicon carbide 碳化硅Silicon dioxide (SiO2)二氧化硅Silicon Nitride (Si3N4)氮化硅Silicon On Insulator 绝缘硅Siliver whiskers 银须Simple cubic 简立方Single crystal 单晶Sink 沉Skin effect 趋肤效应Snap time 急变时间Sneak path 潜行通路Sulethreshold 亚阈的Solar battery/cell 太阳能电池Solid circuit 固体电路Solid Solubility 固溶度Sonband 子带Source 源极Source follower 源随器Space charge 空间电荷Specific heat (PT)热Speed-power product 速度功耗乘积Spherical球面的Spin自旋Split分裂Spontan eous emissi on 自发发身寸Spread ing resista nee 扩展电阻Sputter 溅射Stacking fault 层错Static characteristic 静态特性Stimulated emissio n 受激发射Stimulated recomb in ati on 受激复合Storage time 存储时间Stress 应力Straggle 偏差Sublimation 升华Substrate 衬底Substitutio nal 替位式的Superlattice 超晶格Supply 电源Surface 表面Surge capacity 浪涌能力Subscript 下标Switching time 开关时间Switch 开关TTailing 扩展Terminal 终端Tensor 张量Tensorial 张量的Thermal activation 热激发Thermal conductivity 热导率Thermal equilibrium 热平衡Thermal Oxidation 热氧化Thermal resista nee 热阻Thermal sink 热沉Thermal velocity 热运动Thermoelectricpovoer 温差电动势率Thick-film tech ni que 厚膜技术Th in-film hybrid IC 薄膜混合集成电路Thi n-Film Tran sistor (TFT)薄膜晶体Threshlod 阈值Thyistor 晶闸管Transconductanee 跨导Transfer characteristic 转移特性Transfer electr on 转移电子Tran sfer fun ction 传输函数Tran sie nt 瞬态的Tran sistor agi ng (stress)晶体管老化Tran sit time 渡越时间Transition 跃迁Transition-metal silica 过度金属硅化物Tran siti on probability 跃迁几率Tran siti on region 过渡区Tran sport 输运Tran sverse 横向的Trap陷阱Trapping俘获Trapped charge 陷阱电荷Trian gle gen erator 三角波发生器Triboelectricity 摩擦电Trigger 触发Trim 调配调整Triple diffusion 三重扩散Truth table 真值表Tolerahce 容差Tunnel (ing)隧道(穿)Tunnel current 隧道电流Turn over 转折Turn - off time 关断时间UUltraviolet 紫外的Unijun ction 单结的Unipolar单极的Unit cell原(元)胞Un ity-ga in freque ncy 单位增益频率Un ilateral-switch 单向开关VVacancy 空位Vacuum 真空Vale nee (value)band 价带Value band edge 价带顶Vale nee bond 价键Vapour phase 汽相Varactor变容管Varistor变阻器Vibration 振动Voltage 电压WWafer晶片Wave equation 波动方程Wave guide 波导Wave number 波数Wave-particle duality 波粒二相性Wear-out 烧毁Wire routing 布线Work function 功函数Worst-case device 最坏情况器件Yield成品率Zener breakdow n 齐纟纳击穿。

半导体工艺中的英语词汇

半导体工艺中的英语词汇

AAbrupt junction 突变结Accelerated testing 加速实验Acceptor 受主Acceptor atom 受主原子Accumulation 积累、堆积Accumulating contact 积累接触Accumulation region 积累区Accumulation layer 积累层Active region 有源区Active component 有源元Active device 有源器件Activation 激活Activation energy 激活能Active region 有源(放大)区Admittance 导纳Allowed band 允带Alloy-junction device合金结器件Aluminum(Aluminium)铝Aluminum - oxide 铝氧化物Aluminum passivation 铝钝化Ambipolar 双极的Ambient temperature 环境温度Amorphous 无定形的,非晶体的Amplifier 功放扩音器放大器Analogue(Analog)comparator 模拟比较器Angstrom 埃Anneal 退火Anisotropic 各向异性的Anode 阳极Arsenic (AS)砷Auger 俄歇Auger process 俄歇过程Avalanche 雪崩Avalanche breakdown 雪崩击穿Avalanche excitation雪崩激发BBackground carrier 本底载流子Background doping 本底掺杂Backward 反向Backward bias 反向偏置Ballasting resistor 整流电阻Ball bond 球形键合Band 能带Band gap 能带间隙Barrier 势垒Barrier layer 势垒层Barrier width 势垒宽度Base 基极Base contact 基区接触Base stretching 基区扩展效应Base transit time 基区渡越时间Base transport efficiency基区输运系数Base-width modulation基区宽度调制Basis vector 基矢Bias 偏置Bilateral switch 双向开关Binary code 二进制代码Binary compound semiconductor 二元化合物半导体Bipolar 双极性的Bipolar Junction Transistor (BJT)双极晶体管Bloch 布洛赫Blocking band 阻挡能带Blocking contact 阻挡接触Body - centered 体心立方Body-centred cubic structure 体立心结构Boltzmann 波尔兹曼Bond 键、键合Bonding electron 价电子Bonding pad 键合点Bootstrap circuit 自举电路Bootstrapped emitter follower 自举射极跟随器Boron 硼Borosilicate glass 硼硅玻璃Boundary condition 边界条件Bound electron 束缚电子Breadboard 模拟板、实验板Break down 击穿Break over 转折Brillouin 布里渊Brillouin zone 布里渊区Built-in 内建的Build-in electric field 内建电场Bulk 体/体内Bulk absorption 体吸收Bulk generation 体产生Bulk recombination 体复合Burn - in 老化Burn out 烧毁Buried channel 埋沟Buried diffusion region 隐埋扩散区CCan 外壳Capacitance 电容Capture cross section 俘获截面Capture carrier 俘获载流子Carrier 载流子、载波Carry bit 进位位Carry-in bit 进位输入Carry-out bit 进位输出Cascade 级联Case 管壳Cathode 阴极Center 中心Ceramic 陶瓷(的)Channel 沟道Channel breakdown 沟道击穿Channel current 沟道电流Channel doping 沟道掺杂Channel shortening 沟道缩短Channel width 沟道宽度Characteristic impedance 特征阻抗Charge 电荷、充电Charge-compensation effects 电荷补偿效应Charge conservation 电荷守恒Charge neutrality condition 电中性条件Charge drive/exchange/sharing/transfer/storage 电荷驱动/交换/共享/转移/存储Chemmical etching 化学腐蚀法Chemically-Polish 化学抛光Chemmically-Mechanically Polish (CMP)化学机械抛光Chip 芯片Chip yield 芯片成品率Clamped 箝位Clamping diode 箝位二极管Cleavage plane 解理面Clock rate 时钟频率Clock generator 时钟发生器Clock flip-flop 时钟触发器Close-packed structure 密堆积结构Close-loop gain 闭环增益Collector 集电极Collision 碰撞Compensated OP-AMP 补偿运放Common-base/collector/emitter connection 共基极/集电极/发射极连接Common-gate/drain/source connection 共栅/漏/源连接Common-mode gain 共模增益Common-mode input 共模输入Common-mode rejection ratio (CMRR)共模抑制比Compatibility 兼容性Compensation 补偿Compensated impurities 补偿杂质Compensated semiconductor 补偿半导体Complementary Darlington circuit 互补达林顿电路Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor(CMOS)互补金属氧化物半导体场效应晶体管Complementary error function 余误差函数Computer-aided design (CAD)/test(CAT)/manufacture(CAM)计算机辅助设计/ 测试/制造Compound Semiconductor 化合物半导体Conductance 电导Conduction band (edge)导带(底)Conduction level/state 导带态Conductor 导体Conductivity 电导率Configuration 组态Conlomb 库仑Conpled Configuration Devices 结构组态Constants 物理常数Constant energy surface 等能面Constant-source diffusion恒定源扩散Contact 接触Contamination 治污Continuity equation 连续性方程Contact hole 接触孔Contact potential 接触电势Continuity condition 连续性条件Contra doping 反掺杂Controlled 受控的Converter 转换器Conveyer 传输器Copper interconnection system 铜互连系统Couping 耦合Covalent 共阶的Crossover 跨交Critical 临界的Crossunder 穿交Crucible坩埚Crystal defect/face/orientation/lattice 晶体缺陷/晶面/晶向/晶格Current density 电流密度Curvature 曲率Cut off 截止Current drift/dirve/sharing 电流漂移/驱动/共享Current Sense 电流取样Curvature 弯曲Custom integrated circuit 定制集成电路Cylindrical 柱面的Czochralshicrystal 直立单晶Czochralski technique 切克劳斯基技术(Cz法直拉晶体J)DDangling bonds 悬挂键Dark current 暗电流Dead time 空载时间Debye length 德拜长度De.broglie 德布洛意Decderate 减速Decibel (dB)分贝Decode 译码Deep acceptor level 深受主能级Deep donor level 深施主能级Deep impurity level 深度杂质能级Deep trap 深陷阱Defeat 缺陷Degenerate semiconductor 简并半导体Degeneracy 简并度Degradation 退化Degree Celsius(centigrade)/Kelvin 摄氏/开氏温度Delay 延迟Density 密度Density of states 态密度Depletion 耗尽Depletion approximation 耗尽近似Depletion contact 耗尽接触Depletion depth 耗尽深度Depletion effect 耗尽效应Depletion layer 耗尽层Depletion MOS 耗尽MOSDepletion region 耗尽区Deposited film 淀积薄膜Deposition process 淀积工艺Design rules 设计规则Die 芯片(复数dice)Diode 二极管Dielectric 介电的Dielectric isolation 介质隔离Difference-mode input 差模输入Differential amplifier 差分放大器Differential capacitance 微分电容Diffused junction 扩散结Diffusion 扩散Diffusion coefficient 扩散系数Diffusion constant 扩散常数Diffusivity 扩散率Diffusion capacitance/barrier/current/furnace 扩散电容/势垒/电流/炉Digital circuit 数字电路Dipole domain 偶极畴Dipole layer 偶极层Direct-coupling 直接耦合Direct-gap semiconductor 直接带隙半导体Direct transition 直接跃迁Discharge 放电Discrete component 分立元件Dissipation 耗散Distribution 分布Distributed capacitance 分布电容Distributed model 分布模型Displacement 位移Dislocation 位错Domain 畴Donor 施主Donor exhaustion 施主耗尽Dopant 掺杂剂Doped semiconductor 掺杂半导体Doping concentration 掺杂浓度Double-diffusive MOS(DMOS)双扩散MOS.Drift 漂移Drift field 漂移电场Drift mobility 迁移率Dry etching 干法腐蚀Dry/wet oxidation 干/湿法氧化Dose 剂量Duty cycle 工作周期Dual-in-line package (DIP)双列直插式封装Dynamics 动态Dynamic characteristics 动态属性Dynamic impedance 动态阻抗EEarly effect 厄利效应Early failure 早期失效Effective mass 有效质量Einstein relation(ship)爱因斯坦关系Electric Erase Programmable Read Only Memory(E2PROM)一次性电可擦除只读存储器Electrode 电极Electrominggratim 电迁移Electron affinity 电子亲和势Electronic -grade 电子能Electron-beam photo-resist exposure 光致抗蚀剂的电子束曝光Electron gas 电子气Electron-grade water 电子级纯水Electron trapping center 电子俘获中心Electron Volt (eV)电子伏Electrostatic 静电的Element 元素/元件/配件Elemental semiconductor 元素半导体Ellipse 椭圆Ellipsoid 椭球Emitter 发射极Emitter-coupled logic 发射极耦合逻辑Emitter-coupled pair 发射极耦合对Emitter follower 射随器Empty band 空带Emitter crowding effect 发射极集边(拥挤)效应Endurance test =life test 寿命测试Energy state 能态Energy momentum diagram 能量-动量(E-K)图Enhancement mode 增强型模式Enhancement MOS 增强性MOS Entefic (低)共溶的Environmental test 环境测试Epitaxial 外延的Epitaxial layer 外延层Epitaxial slice 外延片Expitaxy 外延Equivalent curcuit 等效电路Equilibrium majority /minority carriers 平衡多数/少数载流子Erasable Programmable ROM (EPROM)可搽取(编程)存储器Error function complement (erfc)余误差函数Etch 刻蚀Etchant 刻蚀剂Etching mask 抗蚀剂掩模Excess carrier 过剩载流子Excitation energy 激发能Excited state 激发态Exciton 激子Extrapolation 外推法Extrinsic 非本征的Extrinsic semiconductor 杂质半导体FFace - centered 面心立方Fall time 下降时间Fan-in 扇入Fan-out 扇出Fast recovery 快恢复Fast surface states 快界面态Feedback 反馈Fermi level 费米能级Fermi-Dirac Distribution 费米-狄拉克分布Femi potential 费米势Fick equation 菲克方程(扩散)Field effect transistor 场效应晶体管Field oxide 场氧化层Filled band 满带Film 薄膜Flash memory 闪烁存储器Flat band 平带Flat pack 扁平封装Flicker noise 闪烁(变)噪声Flip-flop toggle 触发器翻转Floating gate 浮栅Fluoride etch 氟化氢刻蚀Forbidden band 禁带Forward bias 正向偏置Forward blocking /conducting正向阻断/导通Frequency deviation noise频率漂移噪声Frequency response 频率响应Function 函数GGain 增益Gallium-Arsenide(GaAs)砷化钾Gamy ray r 射线Gate 门、栅、控制极Gate oxide 栅氧化层Gauss(ian)高斯Gaussian distribution profile 高斯掺杂分布Generation-recombination 产生-复合Geometries 几何尺寸Germanium(Ge)锗Graded 缓变的Graded (gradual)channel 缓变沟道Graded junction 缓变结Grain 晶粒Gradient 梯度Grown junction 生长结Guard ring 保护环Gummel-Poom model 葛谋-潘模型Gunn - effect 狄氏效应HHardened device 辐射加固器件Heat of formation 形成热Heat sink 散热器、热沉Heavy/light hole band 重/轻空穴带Heavy saturation 重掺杂Hell - effect 霍尔效应Heterojunction 异质结Heterojunction structure 异质结结构Heterojunction Bipolar Transistor(HBT)异质结双极型晶体High field property 高场特性High-performance MOS.(H-MOS)高性能MOS. Hormalized 归一化Horizontal epitaxial reactor 卧式外延反应器Hot carrior 热载流子Hybrid integration 混合集成IImage - force 镜象力Impact ionization 碰撞电离Impedance 阻抗Imperfect structure 不完整结构Implantation dose 注入剂量Implanted ion 注入离子Impurity 杂质Impurity scattering 杂质散射Incremental resistance 电阻增量(微分电阻)In-contact mask 接触式掩模Indium tin oxide (ITO)铟锡氧化物Induced channel 感应沟道Infrared 红外的Injection 注入Input offset voltage 输入失调电压Insulator 绝缘体Insulated Gate FET(IGFET)绝缘栅FET Integrated injection logic集成注入逻辑Integration 集成、积分Interconnection 互连Interconnection time delay 互连延时Interdigitated structure 交互式结构Interface 界面Interference 干涉International system of unions国际单位制Internally scattering 谷间散射Interpolation 内插法Intrinsic 本征的Intrinsic semiconductor 本征半导体Inverse operation 反向工作Inversion 反型Inverter 倒相器Ion 离子Ion beam 离子束Ion etching 离子刻蚀Ion implantation 离子注入Ionization 电离Ionization energy 电离能Irradiation 辐照Isolation land 隔离岛Isotropic 各向同性JJunction FET(JFET)结型场效应管Junction isolation 结隔离Junction spacing 结间距Junction side-wall 结侧壁LLatch up 闭锁Lateral 横向的Lattice 晶格Layout 版图Lattice binding/cell/constant/defect/distortion 晶格结合力/晶胞/晶格/晶格常熟/晶格缺陷/晶格畸变Leakage current (泄)漏电流Level shifting 电平移动Life time 寿命linearity 线性度Linked bond 共价键Liquid Nitrogen 液氮Liquid-phase epitaxial growth technique 液相外延生长技术Lithography 光刻Light Emitting Diode(LED)发光二极管Load line or Variable 负载线Locating and Wiring 布局布线Longitudinal 纵向的Logic swing 逻辑摆幅Lorentz 洛沦兹Lumped model 集总模型MMajority carrier 多数载流子Mask 掩膜板,光刻板Mask level 掩模序号Mask set 掩模组Mass - action law质量守恒定律Master-slave D flip-flop主从D触发器Matching 匹配Maxwell 麦克斯韦Mean free path 平均自由程Meandered emitter junction梳状发射极结Mean time before failure (MTBF)平均工作时间Megeto - resistance 磁阻Mesa 台面MESFET-Metal Semiconductor金属半导体FETMetallization 金属化Microelectronic technique 微电子技术Microelectronics 微电子学Millen indices 密勒指数Minority carrier 少数载流子Misfit 失配Mismatching 失配Mobile ions 可动离子Mobility 迁移率Module 模块Modulate 调制Molecular crystal分子晶体Monolithic IC 单片IC MOSFET金属氧化物半导体场效应晶体管Mos. Transistor(MOST )MOS. 晶体管Multiplication 倍增Modulator 调制Multi-chip IC 多芯片ICMulti-chip module(MCM)多芯片模块Multiplication coefficient倍增因子NNaked chip 未封装的芯片(裸片)Negative feedback 负反馈Negative resistance 负阻Nesting 套刻Negative-temperature-coefficient 负温度系数Noise margin 噪声容限Nonequilibrium 非平衡Nonrolatile 非挥发(易失)性Normally off/on 常闭/开Numerical analysis 数值分析OOccupied band 满带Officienay 功率Offset 偏移、失调On standby 待命状态Ohmic contact 欧姆接触Open circuit 开路Operating point 工作点Operating bias 工作偏置Operational amplifier (OPAMP)运算放大器Optical photon =photon 光子Optical quenching光猝灭Optical transition 光跃迁Optical-coupled isolator光耦合隔离器Organic semiconductor有机半导体Orientation 晶向、定向Outline 外形Out-of-contact mask非接触式掩模Output characteristic 输出特性Output voltage swing 输出电压摆幅Overcompensation 过补偿Over-current protection 过流保护Over shoot 过冲Over-voltage protection 过压保护Overlap 交迭Overload 过载Oscillator 振荡器Oxide 氧化物Oxidation 氧化Oxide passivation 氧化层钝化PPackage 封装Pad 压焊点Parameter 参数Parasitic effect 寄生效应Parasitic oscillation 寄生振荡Passination 钝化Passive component 无源元件Passive device 无源器件Passive surface 钝化界面Parasitic transistor 寄生晶体管Peak-point voltage 峰点电压Peak voltage 峰值电压Permanent-storage circuit 永久存储电路Period 周期Periodic table 周期表Permeable - base 可渗透基区Phase-lock loop 锁相环Phase drift 相移Phonon spectra 声子谱Photo conduction 光电导Photo diode 光电二极管Photoelectric cell 光电池Photoelectric effect 光电效应Photoenic devices 光子器件Photolithographic process 光刻工艺(photo)resist (光敏)抗腐蚀剂Pin 管脚Pinch off 夹断Pinning of Fermi level 费米能级的钉扎(效应)Planar process 平面工艺Planar transistor 平面晶体管Plasma 等离子体Plezoelectric effect 压电效应Poisson equation 泊松方程Point contact 点接触Polarity 极性Polycrystal 多晶Polymer semiconductor聚合物半导体Poly-silicon 多晶硅Potential (电)势Potential barrier 势垒Potential well 势阱Power dissipation 功耗Power transistor 功率晶体管Preamplifier 前置放大器Primary flat 主平面Principal axes 主轴Print-circuit board(PCB)印制电路板Probability 几率Probe 探针Process 工艺Propagation delay 传输延时Pseudopotential method 膺势发Punch through 穿通Pulse triggering/modulating 脉冲触发/调制Pulse Widen Modulator(PWM)脉冲宽度调制punchthrough 穿通Push-pull stage 推挽级QQuality factor 品质因子Quantization 量子化Quantum 量子Quantum efficiency量子效应Quantum mechanics 量子力学Quasi - Fermi-level准费米能级Quartz 石英RRadiation conductivity 辐射电导率Radiation damage 辐射损伤Radiation flux density 辐射通量密度Radiation hardening 辐射加固Radiation protection 辐射保护Radiative - recombination辐照复合Radioactive 放射性Reach through 穿通Reactive sputtering source 反应溅射源Read diode 里德二极管Recombination 复合Recovery diode 恢复二极管Reciprocal lattice 倒核子Recovery time 恢复时间Rectifier 整流器(管)Rectifying contact 整流接触Reference 基准点基准参考点Refractive index 折射率Register 寄存器Registration 对准Regulate 控制调整Relaxation lifetime 驰豫时间Reliability 可*性Resonance 谐振Resistance 电阻Resistor 电阻器Resistivity 电阻率Regulator 稳压管(器)Relaxation 驰豫Resonant frequency共射频率Response time 响应时间Reverse 反向的Reverse bias 反向偏置SSampling circuit 取样电路Sapphire 蓝宝石(Al2O3)Satellite valley 卫星谷Saturated current range电流饱和区Saturation region 饱和区Saturation 饱和的Scaled down 按比例缩小Scattering 散射Schockley diode 肖克莱二极管Schottky 肖特基Schottky barrier 肖特基势垒Schottky contact 肖特基接触Schrodingen 薛定厄Scribing grid 划片格Secondary flat 次平面Seed crystal 籽晶Segregation 分凝Selectivity 选择性Self aligned 自对准的Self diffusion 自扩散Semiconductor 半导体Semiconductor-controlled rectifier 可控硅Sendsitivity 灵敏度Serial 串行/串联Series inductance 串联电感Settle time 建立时间Sheet resistance 薄层电阻Shield 屏蔽Short circuit 短路Shot noise 散粒噪声Shunt 分流Sidewall capacitance 边墙电容Signal 信号Silica glass 石英玻璃Silicon 硅Silicon carbide 碳化硅Silicon dioxide (SiO2)二氧化硅Silicon Nitride(Si3N4)氮化硅Silicon On Insulator 绝缘硅Siliver whiskers 银须Simple cubic 简立方Single crystal 单晶Sink 沉Skin effect 趋肤效应Snap time 急变时间Sneak path 潜行通路Sulethreshold 亚阈的Solar battery/cell 太阳能电池Solid circuit 固体电路Solid Solubility 固溶度Sonband 子带Source 源极Source follower 源随器Space charge 空间电荷Specific heat(PT)热Speed-power product 速度功耗乘积Spherical 球面的Spin 自旋Split 分裂Spontaneous emission 自发发射Spreading resistance扩展电阻Sputter 溅射Stacking fault 层错Static characteristic 静态特性Stimulated emission 受激发射Stimulated recombination 受激复合Storage time 存储时间Stress 应力Straggle 偏差Sublimation 升华Substrate 衬底Substitutional 替位式的Superlattice 超晶格Supply 电源Surface 表面Surge capacity 浪涌能力Subscript 下标Switching time 开关时间Switch 开关TTailing 扩展Terminal 终端Tensor 张量Tensorial 张量的Thermal activation 热激发Thermal conductivity 热导率Thermal equilibrium 热平衡Thermal Oxidation 热氧化Thermal resistance 热阻Thermal sink 热沉Thermal velocity 热运动Thermoelectricpovoer 温差电动势率Thick-film technique 厚膜技术Thin-film hybrid IC薄膜混合集成电路Thin-Film Transistor(TFT)薄膜晶体Threshlod 阈值Thyistor 晶闸管Transconductance 跨导Transfer characteristic 转移特性Transfer electron 转移电子Transfer function 传输函数Transient 瞬态的Transistor aging(stress)晶体管老化Transit time 渡越时间Transition 跃迁Transition-metal silica 过度金属硅化物Transition probability 跃迁几率Transition region 过渡区Transport 输运Transverse 横向的Trap 陷阱Trapping 俘获Trapped charge 陷阱电荷Triangle generator 三角波发生器Triboelectricity 摩擦电Trigger 触发Trim 调配调整Triple diffusion 三重扩散Truth table 真值表Tolerahce 容差Tunnel(ing)隧道(穿)Tunnel current 隧道电流Turn over 转折Turn - off time 关断时间UUltraviolet 紫外的Unijunction 单结的Unipolar 单极的Unit cell 原(元)胞Unity-gain frequency 单位增益频率Unilateral-switch单向开关VVacancy 空位Vacuum 真空Valence(value)band 价带Value band edge 价带顶Valence bond 价键Vapour phase 汽相Varactor 变容管Varistor 变阻器Vibration 振动Voltage 电压WWafer 晶片Wave equation 波动方程Wave guide 波导Wave number 波数Wave-particle duality 波粒二相性Wear-out 烧毁Wire routing 布线Work function 功函数Worst-case device 最坏情况器件Yield 成品率Zener breakdown 齐纳击穿。

半导体常用英语词汇

半导体常用英语词汇

MFG 常用英文单字Semiconductor半导体导体、绝缘体和半导体主要依据导电系数的大小,决定了电子的移动速度。

导体:金、银、铜、铁、人、水……导电系数大,传导绝缘体:塑料、木头、皮革、纸……导电系数小、传导不半导体:硅中加锗、砷、镓、磷……平时不导电加特定电压后导电Wafer 芯片或晶圆:原意为法国的松饼,饼干上有格子状的饰纹,与FAB内生产的芯片图形类Lot 批;一批芯片中最多可以有25片,最少可以只有一片。

ID Identification的缩写。

用以辨识各个独立的个体,就像公司内每一个人有自己的识别证。

Wafer ID 每一片芯片有自己的芯片刻号,叫Wafer ID。

Lot ID 每一批芯片有自己的批号,叫Lot ID。

Part ID 各个独立的批号可以共享一个型号,叫Part ID。

WIP Work In Process,在制品。

从芯片投入到芯片产品,FAB内各站积存了相当数量的芯片,统称为FAB内的WIP 。

一整个制程又可细分为数百个Stage和Step,每一个Stage所堆积的芯片,称为Stage WIP。

Lot Priority 每一批产品在加工的过程中在WIP中被选择进机台的优先级。

Super Hot Run的优先级为1,视为等级最高,必要时,当Lo上一站加工时,本站便要空着机台等待Super Hot RuHot Run的优先级为2,紧急程度比Super Hot Run次一级。

Normal的优先级为3,视为正常的等级,按正常的派货原则视常班向生产指令而Cycle time 生产周期,FAB Cycle Time 定义为:从芯片投入到芯片产生的这一段时间。

Stage Cycle Time:Lot从进站等候开始到当站加工后出货时间点截Spec. 规格Specification的缩写。

产品在机台加工过程中,每一站均设定规格。

机台加工后,产品或控片经由量测机台量测,该产品加工后,是否在规格内。

半导体常用英语词汇

半导体常用英语词汇

MFG 常用英文单字Semiconductor半导体导体、绝缘体和半导体主要依据导电系数的大小,决定了电子的移动速度。

导体:金、银、铜、铁、人、水……导电系数大,传导容易绝缘体:塑料、木头、皮革、纸……导电系数小、传导不容易半导体:硅中加锗、砷、镓、磷……平时不导电加特定电压后导电Wafer 芯片或晶圆:原意为法国的松饼,饼干上有格子状的饰纹,与FAB内生产的芯片图形类似。

Lot 批;一批芯片中最多可以有25片,最少可以只有一片。

ID Identification的缩写。

用以辨识各个独立的个体,就像公司内每一个人有自己的识别证。

Wafer ID 每一片芯片有自己的芯片刻号,叫Wafer ID。

Lot ID 每一批芯片有自己的批号,叫Lot ID。

Part ID 各个独立的批号可以共享一个型号,叫Part ID。

WIP Work In Process,在制品。

从芯片投入到芯片产品,FAB内各站积存了相当数量的芯片,统称为FAB内的WIP 。

一整个制程又可细分为数百个Stage和Step,每一个Stage所堆积的芯片,称为Stage WIP。

Lot Priority 每一批产品在加工的过程中在WIP中被选择进机台的优先级。

Super Hot Run的优先级为1,视为等级最高,必要时,当Lot在上一站加工时,本站便要空着机台等待Super Hot Run。

Hot Run的优先级为2,紧急程度比Super Hot Run次一级。

Normal的优先级为3,视为正常的等级,按正常的派货原则,或视常班向生产指令而定。

Cycle time 生产周期,FAB Cycle Time 定义为:从芯片投入到芯片产生的这一段时间。

Stage Cycle Time:Lot从进站等候开始到当站加工后出货时间点截止。

Spec. 规格Specification的缩写。

产品在机台加工过程中,每一站均设定规格。

机台加工后,产品或控片经由量测机台量测,该产品加工后,是否在规格内。

半导体常用英语词汇

半导体常用英语词汇

MFG 常用英文单字Semiconductor半导体导体、绝缘体和半导体主要依据导电系数的大小,决定了电子的移动速度。

导体:金、银、铜、铁、人、水……导电系数大,传导容易绝缘体:塑料、木头、皮革、纸……导电系数小、传导不容易半导体:硅中加锗、砷、镓、磷……平时不导电加特定电压后导电Wafer 芯片或晶圆:原意为法国的松饼,饼干上有格子状的饰纹,与FAB内生产的芯片图形类似。

Lot 批;一批芯片中最多可以有25片,最少可以只有一片。

ID Identification的缩写。

用以辨识各个独立的个体,就像公司内每一个人有自己的识别证。

Wafer ID 每一片芯片有自己的芯片刻号,叫Wafer ID。

Lot ID 每一批芯片有自己的批号,叫Lot ID。

Part ID 各个独立的批号可以共享一个型号,叫Part ID。

WIP Work In Process,在制品。

从芯片投入到芯片产品,FAB内各站积存了相当数量的芯片,统称为FAB内的WIP 。

一整个制程又可细分为数百个Stage和Step,每一个Stage所堆积的芯片,称为Stage WIP。

Lot Priority 每一批产品在加工的过程中在WIP中被选择进机台的优先级。

Super Hot Run的优先级为1,视为等级最高,必要时,当Lot在上一站加工时,本站便要空着机台等待Super Hot Run。

Hot Run的优先级为2,紧急程度比Super Hot Run次一级。

Normal的优先级为3,视为正常的等级,按正常的派货原则,或视常班向生产指令而定。

Cycle time 生产周期,FAB Cycle Time 定义为:从芯片投入到芯片产生的这一段时间。

Stage Cycle Time:Lot从进站等候开始到当站加工后出货时间点截止。

Spec. 规格Specification的缩写。

产品在机台加工过程中,每一站均设定规格。

机台加工后,产品或控片经由量测机台量测,该产品加工后,是否在规格内。

半导体行业的英单词和术语

半导体行业的英单词和术语

半导体行业的英单词和术语1. Semiconductor(半导体):指一种导电性能介于导体和绝缘体之间的材料,广泛应用于电子器件中。

3. Integrated Circuit(集成电路):简称IC,将大量的微小电子元件(如晶体管、电阻、电容等)集成在一块半导体芯片上。

4. Transistor(晶体管):一种半导体器件,具有放大信号和开关功能,是现代电子设备的基础组件。

5. Diode(二极管):一种具有单向导通特性的半导体器件,常用于整流、稳压等电路。

6. MOSFET(金属氧化物半导体场效应晶体管):一种常见的晶体管类型,广泛应用于放大器和开关电路。

7. CMOS(互补金属氧化物半导体):一种集成电路技术,采用NMOS和PMOS晶体管组合,具有低功耗、高集成度等优点。

8. Wafer(晶圆):指经过切割、抛光等工艺处理的半导体材料,用于制造集成电路。

9. Photolithography(光刻):在半导体制造过程中,利用光刻技术将电路图案转移到晶圆上的过程。

10. Etching(刻蚀):在半导体制造过程中,通过化学反应或物理方法去除晶圆表面不需要的材料。

11.掺杂(Doping):在半导体材料中引入其他元素,以改变其导电性能。

12. Chip(芯片):指经过封装的集成电路,是电子设备的核心组成部分。

13. PCB(印刷电路板):一种用于支撑和连接电子元件的板材,上面布满了导电线路。

14. Moore's Law(摩尔定律):指集成电路上可容纳的晶体管数量大约每两年翻一番,预测了半导体行业的发展趋势。

15. EDA(电子设计自动化):指利用计算机软件辅助设计电子系统,包括电路设计、仿真、验证等环节。

16. Foundry(代工厂):专门为其他公司生产半导体芯片的企业。

17. Semiconductor Equipment Manufacturer(半导体设备制造商):为半导体行业提供生产设备的公司。

半导体一些术语的中英文对照

半导体一些术语的中英文对照

半导体一些术语的中英文对照离子注入机ion implanterLSS理论Lindhand Scharff and Schiott theory 又称“林汉德-斯卡夫-斯高特理论”。

沟道效应channeling effect射程分布range distribution深度分布depth distribution投影射程projected range阻止距离stopping distance阻止本领stopping power标准阻止截面standard stopping cross section 退火annealing激活能activation energy等温退火isothermal annealing激光退火laser annealing应力感生缺陷stress-induced defect择优取向preferred orientation制版工艺mask-making technology图形畸变pattern distortion初缩first minification精缩final minification母版master mask铬版chromium plate干版dry plate乳胶版emulsion plate透明版see-through plate高分辨率版high resolution plate, HRP超微粒干版plate for ultra-microminiaturization 掩模mask掩模对准mask alignment对准精度alignment precision光刻胶photoresist又称“光致抗蚀剂”。

负性光刻胶negative photoresist正性光刻胶positive photoresist无机光刻胶inorganic resist多层光刻胶multilevel resist电子束光刻胶electron beam resistX射线光刻胶X-ray resist刷洗scrubbing甩胶spinning涂胶photoresist coating后烘postbaking光刻photolithographyX射线光刻X-ray lithography电子束光刻electron beam lithography离子束光刻ion beam lithography深紫外光刻deep-UV lithography光刻机mask aligner投影光刻机projection mask aligner曝光exposure接触式曝光法contact exposure method接近式曝光法proximity exposure method光学投影曝光法optical projection exposure method 电子束曝光系统electron beam exposure system分步重复系统step-and-repeat system显影development线宽linewidth去胶stripping of photoresist氧化去胶removing of photoresist by oxidation等离子[体]去胶removing of photoresist by plasma 刻蚀etching干法刻蚀dry etching反应离子刻蚀reactive ion etching, RIE各向同性刻蚀isotropic etching各向异性刻蚀anisotropic etching反应溅射刻蚀reactive sputter etching离子铣ion beam milling又称“离子磨削”。

半导体专业英语词汇

半导体专业英语词汇

半导体专业词汇1。

acceptance testing (W AT: wafer acceptance testing)2. acceptor:受主,如B,掺入Si中需要接受电子3。

ACCESS:一个EDA(Engineering Data Analysis)系统4. Acid:酸5. Active device:有源器件,如MOS FET(非线性,可以对信号放大)6. Align mark(key):对位标记7. Alloy:合金8。

Aluminum:铝9。

Ammonia:氨水10. Ammonium fluoride:NH4F11。

Ammonium hydroxide:NH4OH12. Amorphous silicon:α-Si,非晶硅(不是多晶硅)13. Analog:模拟的14。

Angstrom:A(1E-10m)埃15。

Anisotropic:各向异性(如POL Y ETCH)16。

AQL(Acceptance Quality Level):接受质量标准,在一定采样下,可以95%置信度通过质量标准(不同于可靠性,可靠性要求一定时间后的失效率)17. ARC(Antireflective coating):抗反射层(用于METAL等层的光刻)18. Antimony(Sb)锑19。

Argon(Ar)氩20。

Arsenic(As)砷21. Arsenic trioxide(As2O3)三氧化二砷22。

Arsine(AsH3)23。

Asher:去胶机24. Aspect ration:形貌比(ETCH中的深度、宽度比)25. Autodoping:自搀杂(外延时SUB的浓度高,导致有杂质蒸发到环境中后,又回掺到外延层)26. Back end:后段(CONTACT以后、PCM测试前)27. Baseline:标准流程28. Benchmark:基准29. Bipolar:双极30。

Boat:扩散用(石英)舟31. CD:(Critical Dimension)临界(关键)尺寸。

半导体英语词汇大全

半导体英语词汇大全

11. acceptance testing (WAT: wafer acceptance testing)2. acceptor: 受主,如B,掺入Si中需要接受电子3. ACCESS:一个EDA(Engineering Data Analysis)系统4. Acid:酸5. Active device:有源器件,如MOS FET(非线性,可以对信号放大)6. Align mark(key):对位标记7. Alloy:合金8. Aluminum:铝9. Ammonia:氨水10. Ammonium fluoride:NH4F11. Ammonium hydroxide:NH4OH12. Amorphous silicon:α-Si,非晶硅(不是多晶硅)13. Analog:模拟的14. Angstrom:A(1E-10m)埃15. Anisotropic:各向异性(如POLY ETCH)16. AQL(Acceptance Quality Level):接受质量标准,在一定采样下,可以95%置信度通过质量标准(不同于可靠性,可靠性要求一定时间后的失效率)17. ARC(Antireflective coating):抗反射层(用于METAL等层的光刻)18. Antimony(Sb)锑19. Argon(Ar)氩20. Arsenic(As)砷21. Arsenic trioxide(As2O3)三氧化二砷22. Arsine(AsH3)223. Asher:去胶机24. Aspect ration:形貌比(ETCH中的深度、宽度比)25. Autodoping:自搀杂(外延时SUB的浓度高,导致有杂质蒸发到环境中后,又回掺到外延层)26. Back end:后段(CONTACT以后、PCM测试前)27. Baseline:标准流程28. Benchmark:基准29. Bipolar:双极30. Boat:扩散用(石英)舟31. CD:(Critical Dimension)临界(关键)尺寸。

半导体实用英日汉总结

半导体实用英日汉总结

半导体实用英语词汇半导体实用英语词汇1. acceptance testing (WAT: wafer acceptance testing-晶圆验收测试)ウェーハの受け入れテスト2. acceptor: 受主,接受器(无线)如B,掺入Si中需要接受电子アクセプター;受容体3. ACCESS(アクセス):一个EDA(Engineering Data Analysis-工程数据分析-エンジニアリングデータ解析)系统4. Acid:酸(さん)5. Active device(アクティブデバイス):有源器件(Active:积极,主动),如MOS FET(非线性,可以对信号放大)6. Align mark(key):对位标记合わせマーク7. Alloy:合金(ごうきん)8. Aluminum:铝(アルミニウム)9. Ammonia:氨水(アンモニア)10. Ammonium fluoride:NH4F(氟化铵)弗化アンモニウム11. Ammonium hydroxide:NH4OH(氢氧化铵)水酸化アンモニウム12. Amorphous silicon(アモルファスシリコン):α-Si,非晶硅(不是多晶硅)13. Analog(アナログ):模拟的14. Angstrom(オングストローム):A(1E-10m)埃15. Anisotropic(異方性):各向异性(如POLY ETCH)16. AQL(Acceptance Quality Level):接受质量标准,在一定采样下,可以95%置信度通过质量标准(不同于可靠性,可靠性要求一定时间后的失效率)受け入れ品質のレベル17. ARC(Antireflective coating反射防止膜):抗反射层(用于METAL(金属)等层的光刻)18. Antimony(Sb)锑アンチモン19. Argon(Ar)氩アルゴン20. Arsenic(As)砷砒素(ひそ)21. Arsenic trioxide(As2O3)三氧化二砷(三酸化砒素)22. Arsine(AsH3)砷化氢アルシン23. Asher:去胶机アッシャー24. Aspect ratio(アスペクト比)n:形貌比(ETCH中的深度、宽度比)25. Auto doping(オートドーピング):自搀杂(外延时SUB的浓度高,导致有杂质蒸发到环境中后,又回掺到外延层)26. Back end(バックエンド):后段(CONTACT(接触)以后、PCM测试前)27. Baseline(ベースライン):标准流程28. Benchmark(ベンチマーク):基准29. Bipolar(バイポーラ):双极30. Boat(ボート):扩散用(石英)舟31. CD:(Critical Dimension---限界寸法)临界(关键)尺寸。

半导体英文词汇

半导体英文词汇

1 Active Area 主动区(工作区)主动晶体管(ACTIVE TRANSISTOR)被制造的区域即所谓的主动区(ACTIVE AREA)。

在标准之MOS制造过程中ACTIVE AREA是由一层氮化硅光罩即等接氮化硅蚀刻之后的局部场区氧化所形成的,而由于利用到局部场氧化之步骤,所以ACTIVE AREA会受到鸟嘴(BIRD’S BEAK)之影响而比原先之氮化硅光罩所定义的区域来的小,以长0.6UM之场区氧化而言,大概会有0.5UM之BIRD’S BEAK存在,也就是说ACTIVE AREA比原在之氮化硅光罩所定义的区域小0.5UM。

2 ACTONE 丙酮1. 丙酮是有机溶剂的一种,分子式为CH3COCH3。

2. 性质为无色,具刺激性及薄荷臭味之液体。

3. 在FAB内之用途,主要在于黄光室内正光阻之清洗、擦拭。

4. 对神经中枢具中度麻醉性,对皮肤黏膜具轻微毒性,长期接触会引起皮肤炎,吸入过量之丙酮蒸汽会刺激鼻、眼结膜及咽喉黏膜,甚至引起头痛、恶心、呕吐、目眩、意识不明等。

5. 允许浓度1000PPM。

3 ADI 显影后检查 1.定义:After Developing Inspection 之缩写2.目的:检查黄光室制程;光阻覆盖→对准→曝光→显影。

发现缺点后,如覆盖不良、显影不良…等即予修改,以维护产品良率、品质。

3.方法:利用目检、显微镜为之。

4 AEI 蚀刻后检查1. 定义:AEI即After Etching Inspection,在蚀刻制程光阻去除前及光阻去除后,分别对产品实施全检或抽样检查。

2.目的:2-1提高产品良率,避免不良品外流。

2-2达到品质的一致性和制程之重复性。

2-3显示制程能力之指针2-4阻止异常扩大,节省成本3.通常AEI检查出来之不良品,非必要时很少作修改,因为重去氧化层或重长氧化层可能造成组件特性改变可靠性变差、缺点密度增加,生产成本增高,以及良率降低之缺点。

5 AIR SHOWER 空气洗尘室进入洁净室之前,需穿无尘衣,因在外面更衣室之故,无尘衣上沾着尘埃,故进洁净室之前,需经空气喷洗机将尘埃吹掉。

半导体领域常用英文词汇

半导体领域常用英文词汇

半导体领域常用英文词汇Alright, here's a collection of commonly used English phrases and terms in the semiconductor industry, written in an informal and conversational style:When it comes to semiconductors, "chip" is a catch-all word. We use it for everything from the smallesttransistors to the complex integrated circuits.You can't talk about semiconductors without mentioning "wafer." These are the thin, round slices of silicon or other materials where the chips are etched.Oh, and let's not forget about "die." It's that small, functional piece of a wafer that gets cut out and packaged as a finished product."Fabrication" or "fab" is where the magic happens.That's where we build those tiny transistors and circuits using precision tools and processes.Testing is crucial in the semiconductor world. We need to ensure every "chiplet" or "tile" works as intended before they go out to customers."Yield" is a big word in fabs. It refers to the percentage of wafers or chips that meet quality standards after production.Packaging is the final step before a chip hits the market. We need to protect it from the elements and ensure it can interface with other components."Moore's Law" is a thing of the past, but it still influences our industry. It's the idea that the number of transistors on a chip doubles every two years or so.Innovation is key in semiconductors. We're always looking for new materials, designs, and processes to push.。

半导体制造常用英语词汇

半导体制造常用英语词汇
半导体常用词汇
MES (Manufacturing Execution System) ERC (Emergency Response Center) ISO 9000 (International Standard Organization) ISEP(Industrial Safety Environment Protection) HR (Human Resource) ENG. (Engineering) PC(production control) TD (Technical Development) EAP(Equipment Automation Project) IT (Information Technology) DCC (Document Control Center) A Air Shower 空气洁净室 Alarm 警讯 Average 平均 APD 异常处理单 Abort 放弃 Acid 酸 Auto/Manual 自动/手动 AMHS 自动化物料传输系统 Area 区域 B Batch 群;组 Back up 备用 Bay rack 货架 Bay 工作区 Bank 储存所 C Cancel 取消 Clean room 无尘室 Cassette 装晶片的晶舟 Chemical 化学药剂 Check 检查;核对 CIM 电脑整和制造 Class 洁净室等级 CMP 化学机械研磨 Child lot 子批 Correct 正确 Cycle time 生产周期 Code 代码 Control 控制 Chip (die) 晶粒 Comment 注解 Critical layer 重要层 Confirm 确认 Chamber 反应室 CD 关键性尺寸 Cart 手推车 Chart 图表 Control Wafer 控片 D Dummy wafer 挡片 生產操作介面軟件 緊急應變中心 国际标准组织 工安环保 人事部 工程部 生产控制 技术研发部门 机台自动化方案 信息技术部门 文件管制中心 Daily check 每天检查 Diffusion 扩散 DI water 去离子水 Damage 损害 Display 展示 Double 重复;加倍 Defect 缺陷 Doping 掺杂 Downgrade 降级 Due date 交期 Discipline 纪律 E Etch 蚀刻 Error 错误 Equipment Engineer 设备工程师(EE) Emergency 紧急状况 Exit 退出 Entry 进入 Energy 能量 Environment 环境 GA (General Affairs) 总务部 Finance 财务部 PR(public relation) 公关部 Training room 训練教室 Shuttle bus 交通車 Training Course 训練课程 Internet 国际互联网络 MFG (Manufacture) 制造部 MPC(Manufacture Production Control)制造生产控制 CIM(Computer Integration Manufacture)电脑整和制造 TPC (Training & Promotion Center)训练发展中心 EQ rack 机台货架 EQ Status 机台状态 F Foundry 代工 Fail 失败 FAB 工厂 Filter 过滤器 Function 功能 G Gas 气体 Gowning room 更衣室 H Hold 暂停 Hot bake 烘烤 I Integrated Circuits 集成电路 (I.C) Idle 闲置 Implant 植入 Inter bay 自动传输轨道系统 ID(Identification) 辨认,鉴定 IPA 有机清洁溶剂 L Layer 层次 Lot 批 Line 线距 Loop 巡路 Load 载入 Log sheet 记录本 Logo 标志 Location 位置 Login 登录 Logout 退出 Lot Status 产品状态 Laundry 洗衣房 Lounge 休息室 M Machine 机器 Module 部门 Move 产量 Monitor 测机 Merge 合并 Micron 微米
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AAbrupt junction 突变结Accelerated testing 加速实验Acceptor 受主Acceptor atom 受主原子Accumulation 积累、堆积Accumulating contact 积累接触Accumulation region 积累区Accumulation layer 积累层Active region 有源区Active component 有源元Active device 有源器件Activation 激活Activation energy 激活能Active region 有源(放大)区Admittance 导纳Allowed band 允带Alloy-junction device合金结器件Aluminum(Aluminium)铝Aluminum - oxide 铝氧化物Aluminum passivation 铝钝化Ambipolar 双极的Ambient temperature 环境温度Amorphous 无定形的,非晶体的Amplifier 功放扩音器放大器Analogue(Analog)comparator 模拟比较器Angstrom 埃Anneal 退火Anisotropic 各向异性的Anode 阳极Arsenic (AS)砷Auger 俄歇Auger process 俄歇过程Avalanche 雪崩Avalanche breakdown 雪崩击穿Avalanche excitation雪崩激发BBackground carrier 本底载流子Background doping 本底掺杂Backward 反向Backward bias 反向偏置Ballasting resistor 整流电阻Ball bond 球形键合Band 能带Band gap 能带间隙Barrier 势垒Barrier layer 势垒层Barrier width 势垒宽度Base 基极Base contact 基区接触Base stretching 基区扩展效应Base transit time 基区渡越时间Base transport efficiency基区输运系数Base-width modulation基区宽度调制Basis vector 基矢Bias 偏置Bilateral switch 双向开关Binary code 二进制代码Binary compound semiconductor 二元化合物半导体Bipolar 双极性的Bipolar Junction Transistor (BJT)双极晶体管Bloch 布洛赫Blocking band 阻挡能带Blocking contact 阻挡接触Body - centered 体心立方Body-centred cubic structure 体立心结构Boltzmann 波尔兹曼Bond 键、键合Bonding electron 价电子Bonding pad 键合点Bootstrap circuit 自举电路Bootstrapped emitter follower 自举射极跟随器Boron 硼Borosilicate glass 硼硅玻璃Boundary condition 边界条件Bound electron 束缚电子Breadboard 模拟板、实验板Break down 击穿Break over 转折Brillouin 布里渊Brillouin zone 布里渊区Built-in 内建的Build-in electric field 内建电场Bulk 体/体内Bulk absorption 体吸收Bulk generation 体产生Bulk recombination 体复合Burn - in 老化Burn out 烧毁Buried channel 埋沟Buried diffusion region 隐埋扩散区CCan 外壳Capacitance 电容Capture cross section 俘获截面Capture carrier 俘获载流子Carrier 载流子、载波Carry bit 进位位Carry-in bit 进位输入Carry-out bit 进位输出Cascade 级联Case 管壳Cathode 阴极Center 中心Ceramic 陶瓷(的)Channel 沟道Channel breakdown 沟道击穿Channel current 沟道电流Channel doping 沟道掺杂Channel shortening 沟道缩短Channel width 沟道宽度Characteristic impedance 特征阻抗Charge 电荷、充电Charge-compensation effects 电荷补偿效应Charge conservation 电荷守恒Charge neutrality condition 电中性条件Charge drive/exchange/sharing/transfer/storage 电荷驱动/交换/共享/转移/存储Chemmical etching 化学腐蚀法Chemically-Polish 化学抛光Chemmically-Mechanically Polish (CMP)化学机械抛光Chip 芯片Chip yield 芯片成品率Clamped 箝位Clamping diode 箝位二极管Cleavage plane 解理面Clock rate 时钟频率Clock generator 时钟发生器Clock flip-flop 时钟触发器Close-packed structure 密堆积结构Close-loop gain 闭环增益Collector 集电极Collision 碰撞Compensated OP-AMP 补偿运放Common-base/collector/emitter connection 共基极/集电极/发射极连接Common-gate/drain/source connection 共栅/漏/源连接Common-mode gain 共模增益Common-mode input 共模输入Common-mode rejection ratio (CMRR)共模抑制比Compatibility 兼容性Compensation 补偿Compensated impurities 补偿杂质Compensated semiconductor 补偿半导体Complementary Darlington circuit 互补达林顿电路Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor(CMOS)互补金属氧化物半导体场效应晶体管Complementary error function 余误差函数Computer-aided design (CAD)/test(CAT)/manufacture(CAM)计算机辅助设计/ 测试/制造Compound Semiconductor 化合物半导体Conductance 电导Conduction band (edge)导带(底)Conduction level/state 导带态Conductor 导体Conductivity 电导率Configuration 组态Conlomb 库仑Conpled Configuration Devices 结构组态Constants 物理常数Constant energy surface 等能面Constant-source diffusion恒定源扩散Contact 接触Contamination 治污Continuity equation 连续性方程Contact hole 接触孔Contact potential 接触电势Continuity condition 连续性条件Contra doping 反掺杂Controlled 受控的Converter 转换器Conveyer 传输器Copper interconnection system 铜互连系统Couping 耦合Covalent 共阶的Crossover 跨交Critical 临界的Crossunder 穿交Crucible坩埚Crystal defect/face/orientation/lattice 晶体缺陷/晶面/晶向/晶格Current density 电流密度Curvature 曲率Cut off 截止Current drift/dirve/sharing 电流漂移/驱动/共享Current Sense 电流取样Curvature 弯曲Custom integrated circuit 定制集成电路Cylindrical 柱面的Czochralshicrystal 直立单晶Czochralski technique 切克劳斯基技术(Cz法直拉晶体J)DDangling bonds 悬挂键Dark current 暗电流Dead time 空载时间Debye length 德拜长度De.broglie 德布洛意Decderate 减速Decibel (dB)分贝Decode 译码Deep acceptor level 深受主能级Deep donor level 深施主能级Deep impurity level 深度杂质能级Deep trap 深陷阱Defeat 缺陷Degenerate semiconductor 简并半导体Degeneracy 简并度Degradation 退化Degree Celsius(centigrade)/Kelvin 摄氏/开氏温度Delay 延迟Density 密度Density of states 态密度Depletion 耗尽Depletion approximation 耗尽近似Depletion contact 耗尽接触Depletion depth 耗尽深度Depletion effect 耗尽效应Depletion layer 耗尽层Depletion MOS 耗尽MOSDepletion region 耗尽区Deposited film 淀积薄膜Deposition process 淀积工艺Design rules 设计规则Die 芯片(复数dice)Diode 二极管Dielectric 介电的Dielectric isolation 介质隔离Difference-mode input 差模输入Differential amplifier 差分放大器Differential capacitance 微分电容Diffused junction 扩散结Diffusion 扩散Diffusion coefficient 扩散系数Diffusion constant 扩散常数Diffusivity 扩散率Diffusion capacitance/barrier/current/furnace 扩散电容/势垒/电流/炉Digital circuit 数字电路Dipole domain 偶极畴Dipole layer 偶极层Direct-coupling 直接耦合Direct-gap semiconductor 直接带隙半导体Direct transition 直接跃迁Discharge 放电Discrete component 分立元件Dissipation 耗散Distribution 分布Distributed capacitance 分布电容Distributed model 分布模型Displacement 位移Dislocation 位错Domain 畴Donor 施主Donor exhaustion 施主耗尽Dopant 掺杂剂Doped semiconductor 掺杂半导体Doping concentration 掺杂浓度Double-diffusive MOS(DMOS)双扩散MOS.Drift 漂移Drift field 漂移电场Drift mobility 迁移率Dry etching 干法腐蚀Dry/wet oxidation 干/湿法氧化Dose 剂量Duty cycle 工作周期Dual-in-line package (DIP)双列直插式封装Dynamics 动态Dynamic characteristics 动态属性Dynamic impedance 动态阻抗EEarly effect 厄利效应Early failure 早期失效Effective mass 有效质量Einstein relation(ship)爱因斯坦关系Electric Erase Programmable Read Only Memory(E2PROM)一次性电可擦除只读存储器Electrode 电极Electrominggratim 电迁移Electron affinity 电子亲和势Electronic -grade 电子能Electron-beam photo-resist exposure 光致抗蚀剂的电子束曝光Electron gas 电子气Electron-grade water 电子级纯水Electron trapping center 电子俘获中心Electron Volt (eV)电子伏Electrostatic 静电的Element 元素/元件/配件Elemental semiconductor 元素半导体Ellipse 椭圆Ellipsoid 椭球Emitter 发射极Emitter-coupled logic 发射极耦合逻辑Emitter-coupled pair 发射极耦合对Emitter follower 射随器Empty band 空带Emitter crowding effect 发射极集边(拥挤)效应Endurance test =life test 寿命测试Energy state 能态Energy momentum diagram 能量-动量(E-K)图Enhancement mode 增强型模式Enhancement MOS 增强性MOS Entefic (低)共溶的Environmental test 环境测试Epitaxial 外延的Epitaxial layer 外延层Epitaxial slice 外延片Expitaxy 外延Equivalent curcuit 等效电路Equilibrium majority /minority carriers 平衡多数/少数载流子Erasable Programmable ROM (EPROM)可搽取(编程)存储器Error function complement (erfc)余误差函数Etch 刻蚀Etchant 刻蚀剂Etching mask 抗蚀剂掩模Excess carrier 过剩载流子Excitation energy 激发能Excited state 激发态Exciton 激子Extrapolation 外推法Extrinsic 非本征的Extrinsic semiconductor 杂质半导体FFace - centered 面心立方Fall time 下降时间Fan-in 扇入Fan-out 扇出Fast recovery 快恢复Fast surface states 快界面态Feedback 反馈Fermi level 费米能级Fermi-Dirac Distribution 费米-狄拉克分布Femi potential 费米势Fick equation 菲克方程(扩散)Field effect transistor 场效应晶体管Field oxide 场氧化层Filled band 满带Film 薄膜Flash memory 闪烁存储器Flat band 平带Flat pack 扁平封装Flicker noise 闪烁(变)噪声Flip-flop toggle 触发器翻转Floating gate 浮栅Fluoride etch 氟化氢刻蚀Forbidden band 禁带Forward bias 正向偏置Forward blocking /conducting正向阻断/导通Frequency deviation noise频率漂移噪声Frequency response 频率响应Function 函数GGain 增益Gallium-Arsenide(GaAs)砷化钾Gamy ray r 射线Gate 门、栅、控制极Gate oxide 栅氧化层Gauss(ian)高斯Gaussian distribution profile 高斯掺杂分布Generation-recombination 产生-复合Geometries 几何尺寸Germanium(Ge)锗Graded 缓变的Graded (gradual)channel 缓变沟道Graded junction 缓变结Grain 晶粒Gradient 梯度Grown junction 生长结Guard ring 保护环Gummel-Poom model 葛谋-潘模型Gunn - effect 狄氏效应HHardened device 辐射加固器件Heat of formation 形成热Heat sink 散热器、热沉Heavy/light hole band 重/轻空穴带Heavy saturation 重掺杂Hell - effect 霍尔效应Heterojunction 异质结Heterojunction structure 异质结结构Heterojunction Bipolar Transistor(HBT)异质结双极型晶体High field property 高场特性High-performance MOS.(H-MOS)高性能MOS. Hormalized 归一化Horizontal epitaxial reactor 卧式外延反应器Hot carrior 热载流子Hybrid integration 混合集成IImage - force 镜象力Impact ionization 碰撞电离Impedance 阻抗Imperfect structure 不完整结构Implantation dose 注入剂量Implanted ion 注入离子Impurity 杂质Impurity scattering 杂质散射Incremental resistance 电阻增量(微分电阻)In-contact mask 接触式掩模Indium tin oxide (ITO)铟锡氧化物Induced channel 感应沟道Infrared 红外的Injection 注入Input offset voltage 输入失调电压Insulator 绝缘体Insulated Gate FET(IGFET)绝缘栅FET Integrated injection logic集成注入逻辑Integration 集成、积分Interconnection 互连Interconnection time delay 互连延时Interdigitated structure 交互式结构Interface 界面Interference 干涉International system of unions国际单位制Internally scattering 谷间散射Interpolation 内插法Intrinsic 本征的Intrinsic semiconductor 本征半导体Inverse operation 反向工作Inversion 反型Inverter 倒相器Ion 离子Ion beam 离子束Ion etching 离子刻蚀Ion implantation 离子注入Ionization 电离Ionization energy 电离能Irradiation 辐照Isolation land 隔离岛Isotropic 各向同性JJunction FET(JFET)结型场效应管Junction isolation 结隔离Junction spacing 结间距Junction side-wall 结侧壁LLatch up 闭锁Lateral 横向的Lattice 晶格Layout 版图Lattice binding/cell/constant/defect/distortion 晶格结合力/晶胞/晶格/晶格常熟/晶格缺陷/晶格畸变Leakage current (泄)漏电流Level shifting 电平移动Life time 寿命linearity 线性度Linked bond 共价键Liquid Nitrogen 液氮Liquid-phase epitaxial growth technique 液相外延生长技术Lithography 光刻Light Emitting Diode(LED)发光二极管Load line or Variable 负载线Locating and Wiring 布局布线Longitudinal 纵向的Logic swing 逻辑摆幅Lorentz 洛沦兹Lumped model 集总模型MMajority carrier 多数载流子Mask 掩膜板,光刻板Mask level 掩模序号Mask set 掩模组Mass - action law质量守恒定律Master-slave D flip-flop主从D触发器Matching 匹配Maxwell 麦克斯韦Mean free path 平均自由程Meandered emitter junction梳状发射极结Mean time before failure (MTBF)平均工作时间Megeto - resistance 磁阻Mesa 台面MESFET-Metal Semiconductor金属半导体FETMetallization 金属化Microelectronic technique 微电子技术Microelectronics 微电子学Millen indices 密勒指数Minority carrier 少数载流子Misfit 失配Mismatching 失配Mobile ions 可动离子Mobility 迁移率Module 模块Modulate 调制Molecular crystal分子晶体Monolithic IC 单片IC MOSFET金属氧化物半导体场效应晶体管Mos. Transistor(MOST )MOS. 晶体管Multiplication 倍增Modulator 调制Multi-chip IC 多芯片ICMulti-chip module(MCM)多芯片模块Multiplication coefficient倍增因子NNaked chip 未封装的芯片(裸片)Negative feedback 负反馈Negative resistance 负阻Nesting 套刻Negative-temperature-coefficient 负温度系数Noise margin 噪声容限Nonequilibrium 非平衡Nonrolatile 非挥发(易失)性Normally off/on 常闭/开Numerical analysis 数值分析OOccupied band 满带Officienay 功率Offset 偏移、失调On standby 待命状态Ohmic contact 欧姆接触Open circuit 开路Operating point 工作点Operating bias 工作偏置Operational amplifier (OPAMP)运算放大器Optical photon =photon 光子Optical quenching光猝灭Optical transition 光跃迁Optical-coupled isolator光耦合隔离器Organic semiconductor有机半导体Orientation 晶向、定向Outline 外形Out-of-contact mask非接触式掩模Output characteristic 输出特性Output voltage swing 输出电压摆幅Overcompensation 过补偿Over-current protection 过流保护Over shoot 过冲Over-voltage protection 过压保护Overlap 交迭Overload 过载Oscillator 振荡器Oxide 氧化物Oxidation 氧化Oxide passivation 氧化层钝化PPackage 封装Pad 压焊点Parameter 参数Parasitic effect 寄生效应Parasitic oscillation 寄生振荡Passination 钝化Passive component 无源元件Passive device 无源器件Passive surface 钝化界面Parasitic transistor 寄生晶体管Peak-point voltage 峰点电压Peak voltage 峰值电压Permanent-storage circuit 永久存储电路Period 周期Periodic table 周期表Permeable - base 可渗透基区Phase-lock loop 锁相环Phase drift 相移Phonon spectra 声子谱Photo conduction 光电导Photo diode 光电二极管Photoelectric cell 光电池Photoelectric effect 光电效应Photoenic devices 光子器件Photolithographic process 光刻工艺(photo)resist (光敏)抗腐蚀剂Pin 管脚Pinch off 夹断Pinning of Fermi level 费米能级的钉扎(效应)Planar process 平面工艺Planar transistor 平面晶体管Plasma 等离子体Plezoelectric effect 压电效应Poisson equation 泊松方程Point contact 点接触Polarity 极性Polycrystal 多晶Polymer semiconductor聚合物半导体Poly-silicon 多晶硅Potential (电)势Potential barrier 势垒Potential well 势阱Power dissipation 功耗Power transistor 功率晶体管Preamplifier 前置放大器Primary flat 主平面Principal axes 主轴Print-circuit board(PCB)印制电路板Probability 几率Probe 探针Process 工艺Propagation delay 传输延时Pseudopotential method 膺势发Punch through 穿通Pulse triggering/modulating 脉冲触发/调制Pulse Widen Modulator(PWM)脉冲宽度调制punchthrough 穿通Push-pull stage 推挽级QQuality factor 品质因子Quantization 量子化Quantum 量子Quantum efficiency量子效应Quantum mechanics 量子力学Quasi - Fermi-level准费米能级Quartz 石英RRadiation conductivity 辐射电导率Radiation damage 辐射损伤Radiation flux density 辐射通量密度Radiation hardening 辐射加固Radiation protection 辐射保护Radiative - recombination辐照复合Radioactive 放射性Reach through 穿通Reactive sputtering source 反应溅射源Read diode 里德二极管Recombination 复合Recovery diode 恢复二极管Reciprocal lattice 倒核子Recovery time 恢复时间Rectifier 整流器(管)Rectifying contact 整流接触Reference 基准点基准参考点Refractive index 折射率Register 寄存器Registration 对准Regulate 控制调整Relaxation lifetime 驰豫时间Reliability 可*性Resonance 谐振Resistance 电阻Resistor 电阻器Resistivity 电阻率Regulator 稳压管(器)Relaxation 驰豫Resonant frequency共射频率Response time 响应时间Reverse 反向的Reverse bias 反向偏置SSampling circuit 取样电路Sapphire 蓝宝石(Al2O3)Satellite valley 卫星谷Saturated current range电流饱和区Saturation region 饱和区Saturation 饱和的Scaled down 按比例缩小Scattering 散射Schockley diode 肖克莱二极管Schottky 肖特基Schottky barrier 肖特基势垒Schottky contact 肖特基接触Schrodingen 薛定厄Scribing grid 划片格Secondary flat 次平面Seed crystal 籽晶Segregation 分凝Selectivity 选择性Self aligned 自对准的Self diffusion 自扩散Semiconductor 半导体Semiconductor-controlled rectifier 可控硅Sendsitivity 灵敏度Serial 串行/串联Series inductance 串联电感Settle time 建立时间Sheet resistance 薄层电阻Shield 屏蔽Short circuit 短路Shot noise 散粒噪声Shunt 分流Sidewall capacitance 边墙电容Signal 信号Silica glass 石英玻璃Silicon 硅Silicon carbide 碳化硅Silicon dioxide (SiO2)二氧化硅Silicon Nitride(Si3N4)氮化硅Silicon On Insulator 绝缘硅Siliver whiskers 银须Simple cubic 简立方Single crystal 单晶Sink 沉Skin effect 趋肤效应Snap time 急变时间Sneak path 潜行通路Sulethreshold 亚阈的Solar battery/cell 太阳能电池Solid circuit 固体电路Solid Solubility 固溶度Sonband 子带Source 源极Source follower 源随器Space charge 空间电荷Specific heat(PT)热Speed-power product 速度功耗乘积Spherical 球面的Spin 自旋Split 分裂Spontaneous emission 自发发射Spreading resistance扩展电阻Sputter 溅射Stacking fault 层错Static characteristic 静态特性Stimulated emission 受激发射Stimulated recombination 受激复合Storage time 存储时间Stress 应力Straggle 偏差Sublimation 升华Substrate 衬底Substitutional 替位式的Superlattice 超晶格Supply 电源Surface 表面Surge capacity 浪涌能力Subscript 下标Switching time 开关时间Switch 开关TTailing 扩展Terminal 终端Tensor 张量Tensorial 张量的Thermal activation 热激发Thermal conductivity 热导率Thermal equilibrium 热平衡Thermal Oxidation 热氧化Thermal resistance 热阻Thermal sink 热沉Thermal velocity 热运动Thermoelectricpovoer 温差电动势率Thick-film technique 厚膜技术Thin-film hybrid IC薄膜混合集成电路Thin-Film Transistor(TFT)薄膜晶体Threshlod 阈值Thyistor 晶闸管Transconductance 跨导Transfer characteristic 转移特性Transfer electron 转移电子Transfer function 传输函数Transient 瞬态的Transistor aging(stress)晶体管老化Transit time 渡越时间Transition 跃迁Transition-metal silica 过度金属硅化物Transition probability 跃迁几率Transition region 过渡区Transport 输运Transverse 横向的Trap 陷阱Trapping 俘获Trapped charge 陷阱电荷Triangle generator 三角波发生器Triboelectricity 摩擦电Trigger 触发Trim 调配调整Triple diffusion 三重扩散Truth table 真值表Tolerahce 容差Tunnel(ing)隧道(穿)Tunnel current 隧道电流Turn over 转折Turn - off time 关断时间UUltraviolet 紫外的Unijunction 单结的Unipolar 单极的Unit cell 原(元)胞Unity-gain frequency 单位增益频率Unilateral-switch单向开关VVacancy 空位Vacuum 真空Valence(value)band 价带Value band edge 价带顶Valence bond 价键Vapour phase 汽相Varactor 变容管Varistor 变阻器Vibration 振动Voltage 电压WWafer 晶片Wave equation 波动方程Wave guide 波导Wave number 波数Wave-particle duality 波粒二相性Wear-out 烧毁Wire routing 布线Work function 功函数Worst-case device 最坏情况器件Yield 成品率Zener breakdown 齐纳击穿。

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