1815三极管手册
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Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381, Fax. +1 800 943 0087
China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700
4.8 4.4
1.7 1.4
4.2 3.6
2.54
1.27
14.5 12.7
2.5
Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
VALUE 250
UNIT K/W
CHARACTERISTICS Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICBO IEBO hFE hFE
VCEsat VBEsat Cc fT F
SYMBOL
PARAMETER
VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb
collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature
collector cut-off current
IE = 0; VCB = 60 V
−
−
emitter cut-off current
IC = 0; VEB = 5 V
−
−
DC current gain
IC = 150 mA; VCE = 6 V
25
−
DC current gain
IC = 2 mA; VCE = 6 V
NOTES
Product specification
2PC1815
1999 May 28
7
Philips Semiconductors – a worldwide company
Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466
Philips Semiconductors
NPN general purpose transistor
Product specification
2PC1815
FEATURES • Low current (max. 150 mA) • Low voltage (max. 50 V).
APPLICATIONS • General purpose switching and amplification,
1999 May 28
5
Philips Semiconductors
NPN general purpose transistor
NOTES
Product specification
2PC1815
1999 May 28
6
Philips Semiconductors
NPN general purpose transistor
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 68 9211, Fax. +359 2 68 9102
2PC1815
120 −
2PC1815Y
120 −
2PC1815GR
200 −
2PC1815BL
350 −
collector-emitter saturation voltage IC = 100 mA; IB = 10 mA
−
−
base-emitter saturation voltage
IC = 100 mA; IB = 10 mA
−
−
100 nA 100 nA −
700
240
400
700
300 mV
1.1 V
3.5 pF
−
MHz
10
dB
1999 May 28
3
Philips Semiconductors
NPN general purpose transistor
PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads
e.g. audio amplifier driver stages.
DESCRIPTION NPN transistor in a TO-92 (SOT54) plastic package. PNP complement: 2PA1015.
PINNING
PIN 1 2 3
base collector emitter
CONDITIONS open emitter open base open collector
Tamb ≤ 25 °C; note 1
Note 1. Transistor mounted on an FR4 printed-circuit board.
MIN.
− − − − − − − −65 − −65
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
2PC1815 NPN general purpose transistor
Product specification Supersedes data of 1997 Mar 28
1999 May 28
Product specification
2PC1815
SOT54
c
E d
1 2
D
3
b1
A
L
L1
b
e1 e
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A
b
Biblioteka Baidu
b1
c
D
d
E
e
e1
L
L1(1)
mm
5.2 5.0
0.48 0.66 0.45 0.40 0.56 0.40
MAX. 60 50 5 150 200 200 500 +150 150 +150
UNIT
V V V mA mA mA mW °C °C °C
1999 May 28
2
Philips Semiconductors
NPN general purpose transistor
Product specification
Product specification
2PC1815
DEFINITIONS
Data Sheet Status
Objective specification Preliminary specification Product specification
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
2PC1815
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
OUTLINE
VERSION
IEC
REFERENCES
JEDEC
EIAJ
EUROPEAN PROJECTION
SOT54
TO-92
SC-43
ISSUE DATE 97-02-28
1999 May 28
4
Philips Semiconductors
NPN general purpose transistor
DESCRIPTION
handbook, halfpage1 2 3
2 1
3
MAM259
Fig.1 Simplified outline (TO-92; SOT54) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
−
−
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz −
2.5
transition frequency
IC = 1 mA; VCE = 6 V; f = 100 MHz 80
−
noise figure
IC = 200 µA; VCE = 5 V; RS = 2 k Ω; f = 1 kHz
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773
China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700
4.8 4.4
1.7 1.4
4.2 3.6
2.54
1.27
14.5 12.7
2.5
Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
VALUE 250
UNIT K/W
CHARACTERISTICS Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICBO IEBO hFE hFE
VCEsat VBEsat Cc fT F
SYMBOL
PARAMETER
VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb
collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature
collector cut-off current
IE = 0; VCB = 60 V
−
−
emitter cut-off current
IC = 0; VEB = 5 V
−
−
DC current gain
IC = 150 mA; VCE = 6 V
25
−
DC current gain
IC = 2 mA; VCE = 6 V
NOTES
Product specification
2PC1815
1999 May 28
7
Philips Semiconductors – a worldwide company
Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466
Philips Semiconductors
NPN general purpose transistor
Product specification
2PC1815
FEATURES • Low current (max. 150 mA) • Low voltage (max. 50 V).
APPLICATIONS • General purpose switching and amplification,
1999 May 28
5
Philips Semiconductors
NPN general purpose transistor
NOTES
Product specification
2PC1815
1999 May 28
6
Philips Semiconductors
NPN general purpose transistor
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 68 9211, Fax. +359 2 68 9102
2PC1815
120 −
2PC1815Y
120 −
2PC1815GR
200 −
2PC1815BL
350 −
collector-emitter saturation voltage IC = 100 mA; IB = 10 mA
−
−
base-emitter saturation voltage
IC = 100 mA; IB = 10 mA
−
−
100 nA 100 nA −
700
240
400
700
300 mV
1.1 V
3.5 pF
−
MHz
10
dB
1999 May 28
3
Philips Semiconductors
NPN general purpose transistor
PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads
e.g. audio amplifier driver stages.
DESCRIPTION NPN transistor in a TO-92 (SOT54) plastic package. PNP complement: 2PA1015.
PINNING
PIN 1 2 3
base collector emitter
CONDITIONS open emitter open base open collector
Tamb ≤ 25 °C; note 1
Note 1. Transistor mounted on an FR4 printed-circuit board.
MIN.
− − − − − − − −65 − −65
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
2PC1815 NPN general purpose transistor
Product specification Supersedes data of 1997 Mar 28
1999 May 28
Product specification
2PC1815
SOT54
c
E d
1 2
D
3
b1
A
L
L1
b
e1 e
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A
b
Biblioteka Baidu
b1
c
D
d
E
e
e1
L
L1(1)
mm
5.2 5.0
0.48 0.66 0.45 0.40 0.56 0.40
MAX. 60 50 5 150 200 200 500 +150 150 +150
UNIT
V V V mA mA mA mW °C °C °C
1999 May 28
2
Philips Semiconductors
NPN general purpose transistor
Product specification
Product specification
2PC1815
DEFINITIONS
Data Sheet Status
Objective specification Preliminary specification Product specification
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
2PC1815
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
OUTLINE
VERSION
IEC
REFERENCES
JEDEC
EIAJ
EUROPEAN PROJECTION
SOT54
TO-92
SC-43
ISSUE DATE 97-02-28
1999 May 28
4
Philips Semiconductors
NPN general purpose transistor
DESCRIPTION
handbook, halfpage1 2 3
2 1
3
MAM259
Fig.1 Simplified outline (TO-92; SOT54) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
−
−
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz −
2.5
transition frequency
IC = 1 mA; VCE = 6 V; f = 100 MHz 80
−
noise figure
IC = 200 µA; VCE = 5 V; RS = 2 k Ω; f = 1 kHz
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773