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专业英语 微电子技术分册 第6节1.1.2 crystal structure晶体结构化学键(赣南师范大学)

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微电子专业英语词汇

微电子专业英语词汇

Abrupt junction 突变结[ə'brʌpt] 突然的；Accelerated testing 加速实验[ək'seləreitid] Acceptor 受主Acceptor atom 受主原子['ætəm] n. 原子Accumulation [ə,kju:mju'leiʃən]积累,堆积Accumulating contact(n. 接触，联系)积累接触Accumulation region['ri:dʒən]地区积累区Accumulation layer['leiə] 层积累层Active region 有源区['æktiv]积极的,有源的Active component [kəm'pəunənt]元件有源元Active device 有源器件Activation 激活Activation energy 激活能Active region 有源（放大）区Admittance [əd'mitəns]导纳Allowed band [bænd]带允带Alloy-junction device ['ælɒɪ]合金结器件Aluminum(Aluminium) [ə'lju:minəm]铝Aluminum – oxide ['ɔksaid]铝氧化物Aluminum passivation [pæsi'veiʃən]钝化铝钝化Ambipolar [,æmbi'pəulə]双极的Ambient temperature ['æmbiənt]环境温度Amorphous [ə'mɔ:fəs]无定形的，非晶体的Amplifier ['æmplifaiə]功放扩音器放大器Analogue(Analog) ['ænəlɔɡ] comparator ['kəmpəreitə]模拟比较器Angstrom['æŋstrəm]埃Anneal [ə'ni:l]退火Anisotropic [æn,aisəu'trɔpik]各向异性的Anode ['ænəud]阳极Arsenic ['ɑ:sənik (AS) 砷Auger ['ɔ:ɡə]俄歇Auger process 俄歇过程Avalanche ['ævəlɑ:ntʃ]雪崩Avalanche breakdown(击穿) 雪崩击穿Avalanche excitation [,eksi'teiʃən](激发)雪崩激发Background(背景,本底,基底) carrier 本底载流子Background doping 本底掺杂Backward ['bækwəd]反向Backward bias ['baiəs](偏置,)偏爱反向偏置Ballasting ['bæləst] resistor 整流电阻Ball bond [bɔnd](结合)球形键合Band 能带Band gap [ɡæp](间隙)能带间隙Barrier 势垒Barrier layer 势垒层Barrier ['bæriə] width 势垒宽度Base 基极Base contact 基区接触Base stretching 基区扩展效应Base transit(运输)time基区渡越时间Base transport efficiency [i'fiʃənsi](效率)基区输运系数Base-width modulation [,mɔdju'leiʃən(调制)基区宽度调制Basis vector ['vektə]矢量基矢Bias 偏置Bilateral [,bai'lætərəl] switch 双向开关Binary ['bainəri]code(代码)二进制代码Binary compound semiconductor二元化合物半导体Bipolar [bai'pəulə]双极性的Bipolar Junction Transistor (晶体管)(BJT)双极晶体管Bloch [blɔk]布洛赫Blocking ['blɔkiŋ]（截止，阻塞）band 阻挡能带Blocking contact 阻挡接触Body（身体，主题）- centered（居中的）体心立方Body-centred cubic ['kju:bik]立方体structure ['strʌktʃə]结构体立心结构Boltzmann 波尔兹曼Bond 键、键合Bonding electron 价电子Bonding pad 键合点Bootstrap circuit ['sə:kit]电路自举电路Bootstrapped emitter [i'mitə]发射器follower（追随者）自举射极跟随器Boron ['bɔ:rɔn]硼Borosilicate [,bɔ:rəu'silikit]硼硅酸盐glass 硼硅玻璃Boundary condition条件，状况边界条件Bound electron 束缚电子Breadboard 模拟板、实验板Break down 击穿Break over 转折Brillouin 布里渊Brillouin zone 布里渊区Built-in 内建的Build-in electric field 内建电场Bulk [bʌlk]体/体内Bulk absorption 体吸收Bulk generation 体产生Bulk recombination [,ri:kɔmbi'neiʃən]体复合Burn - in 老化Burn out 烧毁Buried ['berid]埋葬的channel通道；频道；海峡埋沟Buried diffusion扩散region 隐埋扩散区Can 外壳Capacitance[kə'pæsɪt(ə)ns]电容Capture俘获cross section 俘获截面Capture carrier 俘获载流子Carrier 载流子、载波Carry bit 进位位Carry-in bit 进位输入Carry-out bit 进位输出Cascade [kæs'keid]级联，串联级联Case 管壳Cathode['kæθəud]阴极Center 中心Ceramic [si'ræmik]陶瓷（的）Channel['tʃænəl] (频道)沟道Channel breakdown 沟道击穿Channel current 沟道电流Channel doping 沟道掺杂Channel shortening 沟道缩短Channel width 沟道宽度Characteristic impedance[im'pi:dəns]特征阻抗Charge (控告)电荷,充电Charge-compensation[,kɔmpen'seiʃən](补偿) effects 电荷补偿效应Charge conservation(保存,保持) 电荷守恒Charge neutrality[njuː'trælɪtɪ](中性) condition电中性条件Charge drive/exchange/sharing/transfer/storage 电荷驱动/交换/共享/转移/存储Chemmical etching[njuː'trælɪtɪ]化学腐蚀法Chemically-Polish['pɒlɪʃ]（磨光）化学抛光Chemmically-Mechanically [mɪ'kænɪkəlɪ]（机械地）Polish (CMP) 化学机械抛光Chip 芯片Chip yield（产量）芯片成品率Clamped 箝位Clamping diode 箝位二极管Cleavage['kliːvɪdʒ] plane（平面）解理面Clock rate（比率）时钟频率Clock generator 时钟发生器Clock flip-flop（触发器）时钟触发器Close-packed structure（构造）密堆积结构Close-loop（环）gain（获利，增加）闭环增益Collector 集电极Collision[kə'lɪʒ(ə)n]（冲突）碰撞Compensated（补偿）OP-AMP 补偿运放Common-base/collector/emitter connection 共基极/集电极/发射极连接Common-gate/drain/source connection 共栅/漏/源连接Common-mode gain 共模增益Common-mode input 共模输入Common-mode rejection（抑制，拒绝）ratio (CMRR) 共模抑制比Compatibility[kəm,pætɪ'bɪlɪtɪ]兼容性Compensation 补偿Compensated impurities（杂质）补偿杂质Compensated semiconductor 补偿半导体Complementary（补足的）Darlington circuit（电路，回路）互补达林顿电路Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor（晶体管）(CMOS) 互补金属氧化物半导体场效应晶体管Complementary error function（功能，函数）余误差函数Computer-aided【辅助的】design (CAD)/test(CAT)/manufacture(CAM) 计算机辅助设计/ 测试/制造Compound['kɒmpaʊnd] Semiconductor 化合物半导体Conductance[kən'dʌkt(ə)ns]电导Conduction（传导band (edge) 导带(底) Conduction level/state 导带态Conductor 导体Conductivity 电导率Configuration（配置）组态Conlomb['kuːlɒm]库仑Conpled Configuration Devices 结构组态Constants（常量，常数）物理常数Constant energy surface 等能面Constant-source diffusion（扩散，传播）恒定源扩散Contact（联系，接触）接触Contamination[kən,tæmɪ'neɪʃən]玷污Continuity[,kɒntɪ'njuːɪtɪ]（连续性）equation（方程式，等式）连续性方程Contact hole孔接触孔Contact potential（潜能，潜在的）接触电势Continuity condition 连续性条件Contra['kɒntrə]相反doping 反掺杂Controlled 受控的Converter[kən'vɜːtə]（converter转变，转换）转换器Conveyer[kən'veɚ]传输器Copper（铜）interconnection[,ɪntɚkə'nɛkʃən]（互联）system 铜互连系统Couping 耦合Covalent[kəʊ'veɪl(ə)nt]（共价的）共阶的Crossover 跨交Critical （批评的）临界的Crossunder 穿交Crucible['kruːsɪb(ə)l]坩埚Crystal defect缺陷/face/orientation/lattice 晶体缺陷/晶面/晶向/晶格Current density（密度）电流密度Curvature'kɜːvətʃə曲率Cut off 截止Current drift（漂移）/dirve/sharing电流漂移/驱动/共享Current Sense（感觉，检测）电流取样Curvature 弯曲Custom（风俗，习惯，定制的integrated circuit 定制集成电路Cylindrical 柱面的Czochralshicrystal 直立单晶crystal（晶体，单晶）Czochralski technique 切克劳斯基技术（Cz 法直拉晶体J）Dangling ['dæŋg(ə)lɪŋ;bonds 悬挂键Dark current 暗电流Dead time 空载时间Debye length 德拜长度De.broglie 德布洛意Decderate 减速Decibel ['desɪbel] (dB) 分贝Decode 译码Deep acceptor level 深受主能级Deep donor['dəʊnə（捐赠者level 深施主能级Deep impurity（杂质，不存，不洁）level 深度杂质能级Deep trap 深陷阱Defeat 缺陷Degenerate semiconductor 简并半导体Degeneracy 简并度Degradation[,degrə'deɪʃ(ə)n]退化Degree Celsius(centigrade) /Kelvin 摄氏/开氏温度Delay 延迟Density 密度Density of states 态密度Depletion 耗尽Depletion approximation 耗尽近似Depletion contact 耗尽接触Depletion depth 耗尽深度Depletion effect 耗尽效应Depletion layer 耗尽层Depletion MOS 耗尽MOSDepletion region 耗尽区Deposited film(电影，薄膜) 淀积薄膜Deposition process 淀积工艺Design rules 设计规则Die 芯片（复数dice）Diode 二极管Dielectric 介电的Dielectric isolation（隔离。

电子科学与技术专业英语(微电子技术分册)第一章译文

电子科学与技术专业英语(微电子技术分册)第一章译文

——电材专业英语课文翻译Semiconductor Materials• 1.1 Energy Bands and Carrier Concentration• 1.1.1 Semiconductor Materials•Solid-state materials can be grouped into three classes—insulators(绝缘体）, semiconductors, and conductors. Figure 1-1 shows the electrical conductivities δ(and the corresponding resistivities ρ≡1/δ)associated with(相关）some important materials in each of three classes. Insulators such as fused（熔融）quartz and glass have very low conductivities, in the order of 1E-18 to 1E-8 S/cm;固态材料可分为三种：绝缘体、半导体和导体。

图1－1 给出了在三种材料中一些重要材料相关的电阻值（相应电导率ρ≡1/δ)。

绝缘体如熔融石英和玻璃具有很低电导率，在10-18 到10-8 S/cm;and conductors such as aluminum and silver have high conductivities, typically from 104 to 106 S/cm. Semiconductors have conductivities between those of insulators and those of conductors. The conductivity of a semiconductor is generally sensitive to temperature, illumination（照射）, magnetic field, and minute amount of impurity atoms. This sensitivity in conductivity makes the semiconductor one of the most important materials for electronic applications.导体如铝和银有高的电导率，典型值从104到106S/cm;而半导体具有的电导率介乎于两者之间。

微电子技术专业英语

微电子技术专业英语

Aabruptly 立刻abundance 分布量accelerated 加速accommodat接纳，供应adjacent 接近的affinity 倾向alloying 合金align 排列amorphous type不定形amplifier 放大器analog 模拟的anisotropic 各向异性的anncal 退火annihilate 消灭approximate 近似；相符性arbitary 任意的arsenic 砷at rest 静止avalanche 雪崩Bbarrier 势垒base 基极bias 偏压bipolar junction transistor双极性晶体管（BJT）biasing 偏置boron 硼boundary 边界bulk 体积buried layer 埋层Ccapacitance 电容channel 沟道coefficient 系数collision 碰撞collector 集电极compensate 补偿composite 复合的concentration 浓度conductor 导体conduction band 导带conductivity 磁场configuration 结构constant 常数constitute 构成constituent 要素consumption 功耗constant 恒定core 核心corresponding 对应的correspond 相一致covalent band 价带critical 临界crystal 晶体crystal lattice 晶格crystal orientation 晶向cube 立方cubic 立方的current 电流cutoff 节制DDangling bond 悬挂键dashed line 虚线decay 衰减deficiency 缺乏degenerate 简并density 浓度deplete 耗尽depletion region 耗尽层device 器件dielectic constant 介电常数dielectic 绝缘体，电介质diffusion 扩散dimension 量纲diode 二极管discontinuity 中断discrete 离散的displacement 位移distribution 分布donor 施主doping level 掺杂浓度dopant 掺杂剂drain 漏drift 漂移duplicate 复制Eeffective potential energy有效势能electrode 电极electrostatic 静电学的election 电子自旋element semiconductor 元素半导体elevate 提升emitter 发射极epitaxy 外延equidistant 等距的equilibrium 平衡excess 过盛excitation 激发external 外部的extracted 抽取extrapotation 外推extrinic 非本征FFabrication制作finite 限定的figure of merit 品质因子flat band voltage平带电压flexibility 适应性flux 流动fraction 比例forbidden region 禁带forward bia 正向偏压Ggallium 镓gaseous 气态的gate 栅；门germanium 锗generate 生成graded 缓变gradient 梯度Hhomejunction同质节Iillumination 光照impact ionization 碰撞电离implantation 注入impurity 杂质incident ion 射入离子incorporate 合并infinite 无限的influx 流入inherently 本身insulator 绝缘体interaligitated structure 叉指型结构interatomic 原子间的intercept 截距interest 意义interface 界面，接口integration 积分intrinsic 本征inverted 反向inversion layer反型层ionized 电离isolated 孤立的isotropic 各向同性JJoule 焦耳KKinetic 运动的LLateral 侧面的leakage 漏load 负载lowercase 小写的MMacroscopic 宏观的mass 质量magnitude 数值上MBE 分子束外延merit 优点mfinity 无穷大microsopic微观的migration 迁移modulation 调制momentum 要素multiplication 倍增Nnet doping 净掺杂neutral 中性normalized 归一化nucleus 核OOhmis 欧姆的optical 光学orbit 轨道，转orientation 倾向性oscillator 振荡器oscilloscope 示波器overlap 重叠Pparallel resistant 并联电阻parasitic 寄生的parameters 参数peak 峰值permittivity 介电常数perpendicular竖直的penetrate 进入，渗透photoconductivity光电导性photon 光子polysilicon 多晶硅practical 替代predominate 控制probability 几率proportional 比例的profile 分布pn junction PN结pulse 脉冲Qquantum mechanics 量子力学qualitative 定性Rrange 射程ratio 比值rearranging 排列reclaimable 可回收reciprocal 互惠的recombination center 复合中心resistivity 抵抗力response 响应reverse bia 正向偏压Ssaturation 饱和区scatter 散射self-aligned 自对准的semilog 半对数short-circuiting 短路simulation 仿真slope 斜率solid-state 固体材料solubility 溶度source 源space-charge 空间电荷spatial 空间的stationary 固定的step junction 突变节substrate 衬底，基片subthreshold 亚阈值supersede 替代supply 电源switch 开关Tterminal voltage 端电压tern 项tetrahedron 四分体thermal 热量的traverse 横越transit 运输transiston region 过渡区transistor 晶体管transconduction跨导transconductance互导transiet 瞬时的trunnel 遂穿Uuniform 均匀Vvacancy 空缺vaccum 真空valence band 价带valid 有效的vertical 直立的velocity 速率vibration 振动voltage 电压varies exponentially 指数变化Wwell 阱wafer 晶片work function功函数。

微电子专业英语部分翻译第二章

微电子专业英语部分翻译第二章

第二章67页2.1.1The essential structure of a BJT is represented in Figure 2-1(a).双极性晶体管的基本结构如图2-1（a）所示。

The very earliest such devices had structures literally of this kind.早期器件就具有上面所说的这种的结构。

Two closely spaced junctions were created by crystal-growth methods, and a “bar” or parallelepiped was then cut out of the germanium crystal.两个紧密间隔开的结是由晶体生长方法产生，和一个“杆”或平行六面体，然后切出锗晶体。

Electrical leads were attached to it (an enormous challenge!) and the result was a BJT. For reasons that will be explained shortly, these electrical terminals are given the names, respectively from left to right, emitter, base, and conductor.导线被连接到结（一个巨大的挑战！），结果是一个BJT（双极性晶体管）。

将要简短解释的原因，这些电气端子被赋予名称，分别由左到右，发射极，基极，和集电极。

These names were chosen with an eye to distinctive initial letters, which are displayed in Figure 2-1(a) in association with the three terminals.这三个极用三个独特的字母表示（E、B、C），如图2-1（a）所示。

微电子专业英语

微电子专业英语

Diffusion扩散，传播diffusion furnaces扩散炉facility设施设备quartz石英Tube管子，管，真空管diameter直径transformer变压器pipe管子；笛子Valve阀门；阀flowmeter流量计resemble像；很像wafers晶圆profile规范；概要Vent通风口；出口；排放exhaust排气；排放装置etiquette礼仪；礼节chain smoker老烟枪optics光学MIT麻省理工学院align排列；对准mesa transistor台面型晶体管geometry几何学，图形emitter发射者；发射体base基区emulsion感光剂；乳状液masking plate掩模板expose使··曝光mercury lamp汞灯aluminum铝ohmic欧姆的ohmic contanct欧姆接触moderately相当地dope掺杂antimony锑boron硼yield成品率prevail流行；成功；优先tentative试验的；暂时的advertising campaign广告宣传silicon硅portfolio业务量despite尽管diffusion capacitance扩散电容quartz crystal石英晶体tube diode真空二极管Program Overview and File程序概要和文件exhaust valve排气阀exhaust algorithm穷举算法chain break链中断optics design光学设计mesa diffusion台面扩散Geometry Theorem Prover几何学定理证明emitter follower射极跟随器Base Band基带Mercury tank水银槽ohmic resistance 欧姆电阻doped oxide diffusion掺杂氧扩散Yield criteria合格率标准tentative table of equipment 试行设备表silicon MESFET process硅金属半导体场效应晶体管工艺epitaxial（晶体）取向附生的；外延的micrologic显微科学的WESCON(Western Electronic Show and Convention)西部电子展览和会议shift register移位寄存器inverter反相器order of magnitude数量级isolation绝缘；隔离isolation diffusion隔离扩散result in造成warpage热变形；扭曲IC(integrated circuits)集成电路obsolete废弃的，过时的RTL(resistor transistor logic)电阻晶体管逻辑（电路）DTL（diode transistor logic）二极管晶体管逻辑（电路）unilaterally单方地IRE（Institute of Radio Engineers）无线电工程师学会NAND gate与非门discrete分立的discrete component分立元件the crowd大众Revenue收入hide躲藏；隐瞒reliability可靠性vibration振动；颤动vibration test振动测试explosive爆炸的trigger触发；发射capacity容量estimate估计climb on the bandwagon赶时髦cycle time周期overall从头到尾；总的inertial guidance惯性制导flight control飞行控制ground地Texas Instruments德克萨斯（德州）仪器RCA美国无线电公司General Electric通用电气公司Autonetics自动控制学qualification资格；限制；执照shift register latch移位寄存器锁存电路isolation barrier隔离势垒isolation region隔离区isolation masking隔离掩蔽isolation leakage隔离漏流discrete IC分立集成电路revenue bond收益债券revenue tax财政关税hidden field隐式字段reliability statistics可靠性统计vibration noise振动干扰inertial mass惯性质量ground base共基极接地qualification test合格性试验ground circuit接地电路qualification time鉴定时间qualification phase限定相位mulish执拗的unyielding不易弯曲的obstinate顽固的persistent坚持不懈的Utah犹他州Salt Lake City盐湖城solid state固态responsibility责任priority优先权field effect场效应FET场效应晶体管originate from源于doctorate博士学位flip-flop触发器amplifier放大器gate栅oxide氧化物aluminum铝deposit放置，淀积vaccum真空oxidation氧化threshold voltage阈值电压drain漏fabrication制造instability不稳定性pinch-off夹断pinch-off voltage夹断电压alloy合金standby备用的power density功率密度triode三级真空管circuitry电路packing density存储密度patent专利complementary互补的persistent registration持久性定位solid unit固态器件gate region栅区gate oxide thickeness栅氧化层厚度vacuum tube真空管oxidation film氧化膜oxidation mask氧化掩膜threshold control阈值控制alloying reaction熔合反应Standby Power Supply备用电源general perpose通用的operational amplifier运算放大器industry standards工业标准plug-in插入式的overload protection过载保护freedom from没有identical to和··完全不同operational control unit运算控制单元plug and play即插即用latch mode锁存模式overload circuit breaker过载断路器identical operation恒等运算Schottky-clamped肖特基箝位memory-decoding存储译码data routing数据选择propagation delay time传播延迟时间access time存取时间negligible可忽略不计的demultiplexing多路输出选择Schottky Clamped Transistor肖特基箝位晶体管Schottky Barrier肖特基势垒Access Register存取寄存器Power功耗channel通道serial串行ADC模数转换器data-acquisition数据采集Multiplexer多路复用器bandwidth带宽track/hold采样/保持interface接口Ultra极端的single +5V supply +5V单电源analog input模拟输入single-ended单端Differential差分的unipolar/bipolar单极的/双极的TM(trade mark)商标strobe选通Family系列digital signal processor数字信号处理器successive逐次的approximation 逼近的reference基准drift漂移ppm（parts per million）百万分之几buffer缓冲Amplifier放大器gain增益trim微调LSB（least significant bit）最低有效位pin引脚Quantization error量化误差power-down断电power up加电shut down关闭sampling rate抽样率DIP（dual in-line package）双列直插式封装SO package（small outline package）小外形SOP SSOP（shrink-small-outline package）缩小型SOP anti-aliasing filter抗混叠滤波器data sheet数据表capacitor电容float悬空Falling edge下降沿impedance阻抗clock period时钟周期rising edge上升沿Duty cycle占空比circuitry电路flexible可变的microprocessor微处理器block diagram 框图pseudo伪的differential input差分输入comparator比较器equivalent相等的With respect to关于span跨越cycle周期restore恢复binary-weighted capacitor二进制加权电容General Input总输入General Register通用寄存器Analog to Digital Converter模数转换Multiplexer circuit多路转换电路Ultra Large Scale IC超大规模集成电路differential amplifier差动放大器unipolar transistor单极晶体管bipolar COMS双极型互补金属氧化物半导体Digital Clock Pulse数字时钟脉冲Reference Voltage参考电压Gain margin增益裕度quantization noise量化噪声SOJ J型引脚小外形封装TSOP薄小外形封装VSOP甚小外形封装TSSOP薄的缩小型SOP SOT小外形晶体管SOIC小外形集成电路impedance mismatch阻抗失配flexible printed circuit柔性印制电路Ion implantation离子注入molecule分子electric field电场target靶子；目标A wide variety of各种各样的dose剂量substrate基板；衬底crystal structure晶体结构Incidence发生phosphorus磷dope掺杂homogeneity同质性reproducibility可重复性profile剖面concentration浓度relatively比较而言nitride氮化物penetration刺穿；渗透penetration depth穿透深度gradient梯度sequence序列optimization最佳化dopant掺杂property性质restricted to限于domain领域shallow浅的theoretical理论上trajectory轨道distribute分配collision碰撞randomly随机的impact冲击力arsenic砷的crystalline silicon单晶硅dominant支配channel effect沟道效应tail尾巴tendency趋势saturate浸透，饱和conventional通常的tilt倾斜simulation仿真thermal vibration热振动interaction相互作用ion absorption离子吸收ion beam etching离子束蚀刻ion laser离子激光dose of medicine药剂量substrate interconnection衬底互连incidence zone入射区optimization cost优化成本dopant diffusion掺杂剂扩散domain name域名shallow binding浅结合distributed capacitance分布电容collision channel冲突通道randomly distributed data随机分布数据impact strength冲击强度impact response击打响应channeling diode沟道二极管conventional model传统模型thermal conduction热传导Simulation Analysis and Modeling模拟分布与模型化thermal agitation noise热噪声Thermal oxidation热氧化elevate提升angstroms埃inclination低下来ambient环境Room temperature室温oxidation furnace氧化炉diffusion furnace扩散炉cabinet机壳Fuse熔断quartz石英tube管undergo经受；承担heating coil加热线圈Glassware玻璃制品paddles短桨oxidizing agent氧化剂dry oxidation干法氧化Wet oxidation湿法氧化silicon硅silicon dioxide二氧化硅relative density相对密度Parabolic抛物线hamper妨碍empirically经验地halogen卤素flux变化Ambient condition环境条件ambient noise环境噪音ambient temperature环境温度Quartz crystal石英晶体quartz oscillator石英振荡器undergo change历经变化Quartz Crystal Frequencey Oscillator石英晶体频率振荡器undergo examination受到审讯Undergo experience经历undergo surgery接受手术undergo punishment遭受处罚Heating and ventilation供暖和通风heating effect热效应heating time加热时间Silicon chip硅片silicon dioxide layer二氧化硅层relative accuracy相对精度Relative divergence相对偏差relative magnitude相对值parabolic antenna抛物线天线Flux coating焊剂涂敷flux counter磁通计数器flux leakage漏磁Assemble装配packaging封装manufacture制造transform改变semiconductor半导体functional product功能产品end user终端用户electrical connection电连接Transmission传送thermal dissipation热损reliability可靠性innovation革新Architecture 建筑system integration系统集成expansion膨胀wireless无线的Bio-chips生物芯片optoelectronics光电子学scale等级gap间隙diversification多样化MEMS：Micro Electro Mechanical System微电子机械系统slack松弛mechanism混合SIP(system-in-package)系统芯片functional density功能密度printable可印刷的Embedded devices嵌入式器件emerging新兴的regulatory管理的assemble cell装配单元packaging technique组装技术transforming principle转化要素semiconductor junction半导体结transmission band传输频带expansion connector扩展接口System Application Architecture系统应用程序体系wireless terminal无线终端chip addressing芯片寻址gap junction间隙结合gap length间隙长度slack business松弛业务slack variable松弛变量mechanism design机械设计printable character可打印字符emerging technology新兴技术pin assignment引脚分配pin configuration引脚配置category construction类别构造identical equation恒等方程identical entry恒等项fan out扇出perspective view透视图perspective projection透视投影portable terminal 便携式终端stacked graph叠式图stacked interrupt栈式中断minimal automaton最小自动化precision coding精确编码precision instrument精密仪器alignment pattern对准模式alignment requirement校准请求absorption spectrum吸收谱absorption coefficient吸收系数refractive index折射率scattering layer散射层coupling capacitance耦合电容filter condition筛选条件filter factor过滤因子dielectric layer介电层impedance bridge阻抗电桥impedance mismatch阻抗失配integrated passive devices（IPD）集成无源器件exclusive专有地filter过滤器resistive电阻性的inductive电感性的capacitive电容性的capacitor电容器polymer聚合物dielectric电介质impedance阻抗RF-signal射频信号cellular网眼的thin film薄膜mountable可安装的bondable能捆绑的alumina氧化铝filter conditions筛选条件filter plate滤光板dielectric breakdown电介质击穿dielectric constant介电常数dielectric isolation电介质隔离法。

微电子专业英语翻译

微电子专业英语翻译

当超量载流子被导入一个直接禁带半导体时，电子与空穴直接复合的几率 较高，这是因为导带的底部与价带的顶端位于同一线上，因此在禁带间跃 迁时，无需额外的动量。直接复合率R应正比于导带中含有的电子数目及 价带中含有的空穴数目。也就是 R=βnp 。其中β为比例常数。
As discussed previously, in thermal equilibrium the recombination rate must be balanced by the generation rate . Therefore , for an n-type semiconductor, we have Gth=Rth=βn no p no where nno and pno represent electron and hole densities in an n-type semiconductor at thermal equilibrium. When we shine a light on the semiconductor to produce electron-hole pairs at a rate GL(Fig.2.11(b)), the carrier concentrations are above their equilibrium values.
当超量载流子被导入一个直接禁带半导体时电子与空穴直接复合的几率较高这是因为导带的底部与价带的顶端位于同一线上因此在禁带间跃迁时无需额外的动量
2.5 Generation and Recombination Processes 载流子产生与复合过程
3. Characteristics of Diodes二极管特性 3.1 Introduction介绍
当电子从导带向下移到价带， 一个电子 - 空穴对消失。这 种反向过程称为复合，并以 复 合 率 Rth 表 示 ， 如 图 2.11 （ a ）所示。在热平衡状态 下，产生速率 Gth 必定等于 复合率 Rth ，所以载流子浓 度维持常数，且维持 pn=ni2 的状况。

电子科学与技术专业英语微电子技术分册部分单词

电子科学与技术专业英语微电子技术分册部分单词

子技术分册部分单词子技术分册部分单词缩略词：BJT 双极结型晶体管 Bipolar Junction TransistorLED 发光二极管 Light Emitting DiodeMOS 金属氧化物半导体场效应晶体管 Metal Oxide SemiconductorFET 场效应晶体管 Filed Effect Transistorbcc 体心立方 Body-centered cubicfcc 面心立方 Face-centered cubicSOI Silicon-On-Insulator绝缘层上硅结构CVD Chemical Vapor Deposition化学气相淀积+ plus/positive - negative * minus / negativeX2 X square the square root of X3 x cube the cubic root of X y X to the yth单词：Semiconductor半导体transition 跃迁Conductivit电导率diffusivity piecewise 分段扩散率 resistivity 电阻率diffusivity 扩散系数Bipolar transistor 双极型晶体管 step junction 突变结Rectifie整流器 metallurgical junction 合金结Photodiode 光电二极管 fermi level 费米能级Leakage current 漏电流exponential 指数的Silicon dioxide 二氧化硅 dopant 掺杂Lattice 晶格dielectric 电解质 dislodge 移出Unit cell 晶胞 Facet 晶面bonding 键合phonon 声子Lattice constant 晶格常数 tetrahedral 四面体的 Diamond lattice 金刚石晶格Level energy 能级 Miller indices 弥勒指数 acoustic 声学的Hole 空穴lifetime 寿命Permittivity 介电常数continuity equation连续方程Covalent bonding 共价键 impurity 杂质Conduct/valence band 导带，价带device 装置，器件Effective density of states 有效态密度 magnetic 有磁性的Intrinsic 本征的 illumination 照明 silicon ，gallium，germanium，gallium arsenideExtrinsic 非本征的 reciprocal 倒数，相反的Carrier 载流子 agitation 激动，搅拌Bandgap 能带间隙 incremental 增加的Mass action law 质量作用定律excitation 激发Donor acceptor 施主受主Injection 注入collision 冲突，抵触impact ionization 碰撞电离superimposed 叠加sufficient 充分的Scatter 散射Drift 漂移 succession 连续的 drift velocity 漂移速度Mean free time /path 平均自由时间/程Mobility 迁移率saturation 饱和Recombination 复合 spatial 空间overwhelm vt.压倒；淹没；受打击 Decay 衰减Abrupt 突变 derivative 衍生物bias 偏见 gradient 梯度；magnitude 量级 Direct Recombination 直接复合Photoconductivity 光电导 potential barrier [物] 势垒；[电子] 位垒;voltmeter 电压计quantitative 定量的amplification 放大（率steady state 恒稳态;transient state 瞬态；过渡状态; qualitative .定性的rectification n. [电] 整流 equilibrium condition 平衡态endeavor 努力 conceive 设想；考虑 ; postulate.假定 unfolding 演变; Prime n. 初期； Primitive 原始的，简单的，粗糙的; artistic adj. 艺术的；supervisor n. 监督人，管理人；检查员;Instinct n. 本能，直觉 analog n.模拟；类似物analytical adj. 分析的 genuine adj. 真实的，真正的 inferior n. 下级；次品 acronym n. 首字母缩略词; insofar as 在…的范围内；到…程度; embodimentn. 体现；化身；具体化 ;proliferate vi. 增殖；扩散；激增vt.使激增;constantly adv. 不断地；时常地; complementary adj. 补足的，补充的; dissipation n.浪费；消散；[物] 损耗; vehicle n. [车辆] 车辆；工具；交通工具；传播媒介Parallelepiped n. 平行六面体; metallurgical adj. 冶金的；冶金学的; Pedestal n. 基架，基座； analogous adj. 类似的；可比拟的; Ambiguity n.含糊；不明确； retain vt.保持；雇；记住; Resemblance n. 相似；相似之处prototypical adj. 原型的；典型的; Parasitic adj. 寄生的（等于parasitical）;Vestigial adj. 退化的；残余的；发育不全的;parallel n. 平行线平行的 Grooves n. 细槽，凹槽simultaneously同时发生地 remnant n. 剩余adj. 剩余的;Mount n. 山峰；底座； Acknowledge 承认; disturbance 干扰; inevitable 不可避免的;inherent 固有的; subsume 把。

微电子专业英语词汇

微电子专业英语词汇

微电子专业英语词汇 IMB standardization office【IMB 5AB- IMBK 08- IMB 2C】Abrupt junction 突变结['brpt] 突然的；Accelerated testing 加速实验[k'selreitid]Acceptor 受主 Acceptor atom 受主原子['tm] n. 原子Accumulation [,kju:mju'lein]积累,堆积Accumulating contact(n. 接触，联系)积累接触Accumulation region['ri:dn]地区积累区 Accumulation layer['lei] 层积累层Active region 有源区['ktiv]积极的,有源的 Active component [km'punnt]元件有源元Active device 有源器件 Activation 激活Activation energy 激活能 Active region 有源（放大）区Admittance [d'mitns]导纳 Allowed band [b?nd]带允带Alloy-junction device ['l]合金结器件 Aluminum(Aluminium) ['lju:minm]铝Aluminum – oxide ['ksaid]铝氧化物 Aluminum passivation [psi'vein]钝化铝钝化Ambipolar [,mbi'pul]双极的 Ambient temperature ['mbint]环境温度Amorphous ['m:fs]无定形的，非晶体的 Amplifier ['mplifai]功放扩音器放大器Analogue(Analog) ['nlɡ] comparator ['kmpreit]模拟比较器 Angstrom ['strm]埃Anneal ['ni:l]退火 Anisotropic [n,aisu'trpik]各向异性的Anode ['nud]阳极 Arsenic ['ɑ:s?nik (AS) 砷Auger [':ɡ]俄歇 Auger process 俄歇过程Avalanche ['vlɑ:nt]雪崩 Avalanche breakdown(击穿) 雪崩击穿Avalanche excitation [,eksi'tei?n](激发)雪崩激发Background(背景,本底,基底) carrier 本底载流子 Background doping 本底掺杂Backward ['bkwd]反向 Backward bias ['bai?s](偏置,)偏爱反向偏置Ballasting ['blst] resistor 整流电阻 Ball bond [b?nd](结合)球形键合Band 能带 Band gap [ɡ?p](间隙)能带间隙Barrier 势垒 Barrier layer 势垒层Barrier ['bri] width 势垒宽度 Base 基极Base contact 基区接触 Base stretching 基区扩展效应Base transit(运输)time基区渡越时间 Base transport efficiency [i'fi?nsi](效率)基区输运系数Base-width modulation [,mdju'lein(调制)基区宽度调制 Basis vector ['vekt]矢量基矢Bias 偏置 Bilateral [,bai'ltrl] switch 双向开关Binary ['bain?ri]code(代码)二进制代码Binary compound semiconductor二元化合物半导体Bipolar [bai'pul]双极性的 Bipolar Junction Transistor (晶体管)(BJT)双极晶体管Bloch [bl?k]布洛赫 Blocking ['blki]（截止，阻塞） band 阻挡能带Blocking contact 阻挡接触 Body（身体，主题） - centered（居中的）体心立方Body-centred cubic ['kju:bik]立方体structure ['strkt]结构体立心结构 Boltzmann 波尔兹曼Bond 键、键合 Bonding electron 价电子Bonding pad 键合点 Bootstrap circuit ['s:kit]电路自举电路Bootstrapped emitter [i'mit]发射器 follower（追随者）自举射极跟随器 Boron ['b:rn]硼Borosilicate [,b:ru'silikit]硼硅酸盐 glass 硼硅玻璃 Boundary condition 边界条件Bound electron 束缚电子 Breadboard 模拟板、实验板Break down 击穿 Break over 转折Brillouin 布里渊 Brillouin zone 布里渊区Built-in 内建的 Build-in electric field 内建电场Bulk [b?lk]体/体内 Bulk absorption 体吸收Bulk generation 体产生 Bulk recombination [,ri:kmbi'nein]体复合Burn - in 老化 Burn out 烧毁Buried ['berid]埋葬的 channel埋沟 Buried diffusion扩散 region 隐埋扩散区Can 外壳 Capacitance[k'p?st()ns]电容Capture俘获 cross section 俘获截面 Capture carrier 俘获载流子Carrier 载流子、载波 Carry bit 进位位Carry-in bit 进位输入 Carry-out bit 进位输出Cascade [k?s'keid]级联，串联级联 Case 管壳Cathode['kθud]阴极 Center 中心Ceramic [si'r?mik]陶瓷（的） Channel['tnl] (频道)沟道Channel breakdown 沟道击穿 Channel current 沟道电流Channel doping 沟道掺杂 Channel shortening 沟道缩短Channel width 沟道宽度 Characteristic impedance[im'pi:d?ns]特征阻抗Charge (控告)电荷,充电 Charge-compensation[,kmpen'sein](补偿) effects 电荷补偿效应Charge conservation(保存,保持) 电荷守恒Charge neutrality[nju'trlt](中性) condition电中性条件Charge drive/exchange/sharing/transfer/storage 电荷驱动/交换/共享/转移/存储Chemmical etching[nju'trlt]化学腐蚀法 Chemically-Polish['pl]（磨光）化学抛光Chemmically-Mechanically [m'knkl]（机械地）Polish (CMP) 化学机械抛光 Chip 芯片Chip yield（产量）芯片成品率 Clamped 箝位Clamping diode 箝位二极管 Cleavage['klivd] plane（平面）解理面Clock rate（比率）时钟频率 Clock generator 时钟发生器Clock flip-flop（触发器）时钟触发器 Close-packed structure（构造）密堆积结构Close-loop（环） gain（获利，增加）闭环增益 Collector 集电极Collision[k'l()n]（冲突）碰撞 Compensated（补偿） OP-AMP 补偿运放Common-base/collector/emitter connection 共基极/集电极/发射极连接Common-gate/drain/source connection 共栅/漏/源连接Common-mode gain 共模增益 Common-mode input 共模输入Common-mode rejection（抑制，拒绝）ratio (CMRR) 共模抑制比Compatibility[km,pt'blt]兼容性 Compensation 补偿Compensated impurities（杂质）补偿杂质 Compensated semiconductor 补偿半导体Complementary（补足的） Darlington circuit（电路，回路）互补达林顿电路Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor（晶体管）(CMOS) 互补金属氧化物半导体场效应晶体管Complementary error function（功能，函数）余误差函数Computer-aided【辅助的】design (CAD)/test(CAT)/manufacture(CAM)Compound['kmpand] Semiconductor 化合物半导体 Conductance[kn'dkt()ns]电导Conduction（传导band (edge) 导带(底) Conduction level/state 导带态Conductor 导体 Conductivity 电导率Configuration（配置）组态 Conlomb['kulm]库仑Conpled Configuration Devices 结构组态 Constants（常量，常数）物理常数Constant energy surface 等能面 Constant-source diffusion（扩散，传播）恒定源扩散Contact（联系，接触）接触 Contamination[kn,tm'nen]玷污Continuity[,knt'njut]（连续性）equation（方程式，等式）连续性方程Contact hole孔接触孔Contact potential（潜能，潜在的）接触电势 Continuity condition 连续性条件Contra['kntr]相反 doping 反掺杂 Controlled 受控的Converter[kn'vt]（converter转变，转换）转换器 Conveyer[kn've]传输器Copper（铜） interconnection[,ntk'nkn]（互联） system 铜互连系统 Couping 耦合Covalent[k'vel()nt]（共价的）共阶的 Crossover 跨交Critical （批评的）临界的 Crossunder 穿交Crucible['krusb()l]坩埚Crystal defect缺陷/face/orientation/lattice 晶体缺陷/晶面/晶向/晶格Current density（密度）电流密度 Curvature'kvt曲率Cut off 截止Current drift（漂移）/dirve/sharing电流漂移/驱动/共享Current Sense（感觉，检测）电流取样 Curvature 弯曲Custom（风俗，习惯，定制的integrated circuit 定制集成电路 Cylindrical 柱面的Czochralshicrystal 直立单晶crystal（晶体，单晶）Czochralski technique 切克劳斯基技术（Cz 法直拉晶体 J）Dangling ['d?g()l;bonds 悬挂键 Dark current 暗电流Dead time 空载时间 Debye length 德拜长度德布洛意 Decderate 减速Decibel ['des?bel] (dB) 分贝 Decode 译码Deep acceptor level 深受主能级 Deep donor['dn（捐赠者level 深施主能级Deep impurity（杂质，不存，不洁）level 深度杂质能级 Deep trap 深陷阱Defeat 缺陷Degenerate semiconductor 简并半导体 Degeneracy 简并度Degradation[,degr'de()n]退化 Degree Celsius(centigrade) /Kelvin 摄氏/开氏温度Delay 延迟 Density 密度Density of states 态密度 Depletion 耗尽Depletion approximation 耗尽近似 Depletion contact 耗尽接触Depletion depth 耗尽深度 Depletion effect 耗尽效应Depletion layer 耗尽层 Depletion MOS 耗尽 MOSDepletion region 耗尽区 Deposited film(电影，薄膜) 淀积薄膜Deposition process 淀积工艺 Design rules 设计规则Die 芯片（复数 dice） Diode 二极管Dielectric 介电的 Dielectric isolation（隔离。

微电子技术英语考试参考翻译

微电子技术英语考试参考翻译

第一章1页1.1.1 Solid-state…固态材料可分为三种：绝缘体、半导体和导体。

图1-1给出了在三种材料中一些重要材料相关的电阻值（相应电导率）。

绝缘体如熔融石英和玻璃具有很低电导率，在10^-18到10^-8S/cm之间。

导体如铝和银有高的电导率，典型值从104到106S/cm;而半导体具有的电导率介乎于两者之间。

半导体的电导率一般对温度、光照、磁场和小的杂志原子非常敏感。

在电导率上的敏感变化使得半导体材料称为在电学应用上为最重要的材料。

3页1.1.2 The semiconductor…我们研究的半导体材料是单晶，也就是说，原子是按照三维周期形式排列。

在晶体中原子的周期排列称为晶格。

在晶体里，一个原子从不远离它确定位置。

与原子相关的热运动也是围绕在其位置附近。

对于给定的半导体，存在代表整个晶格的晶胞，通过在晶体中重复晶胞组成晶格。

6页1.1.3 As discussed…如1.1.2节所述，在金刚石结构的每个原子被4个相邻原子所包围。

每个原子在外轨道具有4个电子，并且每个电子与相邻原子共享价电子；每对电子组成一个共价键。

共价键存在于同种原子之间或具有相同外层电子结构的不同元素的原子间。

每个电子与每个原子核达到平衡需要相同时间。

然而，所有电子需要很多时间在两个原子核间达到平衡。

两个原子核对电子的吸引力保证两个原子在一起。

对于闪锌矿机构如砷化镓主要的价键引力主要来自于共价键。

当然，砷化镓也具有小的离子键引力即Ga+离子与四周As-离子，或As离子和四周Ga+离子。

7页1.1.4 The detailed…结晶固体的详细能带结构能够用量子理论计算而得。

图1-3是孤立硅原子的金刚石结构晶体形成的原理图。

每个孤立原子有不连续能带（在右图给出的两个能级）。

如原子间隔的减少，每个简并能级将分裂产生带。

在空间更多减少将导致能带从不连续能级到失去其特性并合并起来，产生一个简单的带。

当原子间距离接近金刚石结构的平衡原子间距（対硅而言晶格常数0.543nm）,这个带分为两个带区。

2024年微电子封装技术课程重点内容(English)

2024年微电子封装技术课程重点内容(English)

Microelectronics packaging technology(R eview contents)Chapter 1：Introduction1.The development characteristics and trends of microelectronics packaging.2.The functions of microelectronics packaging.3.The levels of microelectronics packaging technology.4.The methods for chip bonding.Chapter 2：Chip interconnection technologyIt is one of the key chapters1.The Three kinds of chip interconnection, and their characteristics and applications.2.The types of wire bonding (WB) technology, their characteristics and working principles.3.The working principle and main process of the wire ball bonding.4.The major materials for wire bonding.5.Tape automated bonding (TAB) technology:1）The characteristic and application of TAB technology.2）The key materials and technologies of TAB technology.3）The internal lead and outer lead welding technology of TAB technology.6. Flip Chip Bonding (FCB) Technology1）The characteristic and application of flip chip bonding technology2）UBM and multilayer metallization under chip bump；UBM’s structure and material, and the roles ofeach layer.3）The main fabrication method of chip bumps.4）FCB technology and its reliability.5）C4 soldering technology and its advantages.6）The role of underfill in FCB.7）The interconnection principles for Isotropic and anisotropic conductive adhesive respectively. Chapter 3: Packaging technology of Through-Hole components1.The classification of Through-Hole components.2.Focused on：DIP packaging technology, including its process flow.3.The characteristics of PGA.Chapter 4：Packaging technology of surface mounted device (SMD)1.The advantages and disadvantages of SMD.2.The types of SMD.3.The main SMD packaging technologies, focused on：SOP、PLCC、LCCC、QFP.4.The packaging process flow of QFP.5.The risk of moisture absorption in plastic packages, the mechanism of the cracking caused by moistureabsorption, and solutions to prevent for such failure.Chapter 5：Packaging technology of BGA and CSP1.The characteristics of BGA and CSP.2.The packaging technology for PBGA，and its process flow.3.The characteristics of packaging technology for CSP.4.The reliability problems of BGA and CSP.Chapter 6：Multi-Chip Module（MCM）1.The classification and characteristics of MCM2. The assembly technology of MCM.Chapter 7：Electronic packaging materials and substrate technology1. The classification of the materials for electronic packaging, the main requirements for packagingmaterials.2. The types of metals in electronic packaging, and their main applications.3. The main requirements for polymer materials in electronic packaging.4.Classification of main substrate materials, and the major requirements for substrate materials.Chapter 8：Microelectronics packaging reliability1.The basic concepts of electronic packaging reliability.2.The basic concepts for failure mode and failure mechanism in electronic packaging.3.Main failure (defect) modes (types) of electronic packaging.4.The purpose and procedure of failure analysis (FA) ；Common FA techniques (such as cross section, dyeand pry, SEM, CSAM ...).5 The purpose and key factors (such as stress level, stress type …) to design accelerated reliability test. Chapter 9：Advanced packaging technologies1.The concept of wafer level packaging (WLP) technology.2.The key processes of WL-CSP.3.The concept and types of the 3D packaging technologies.Specified Subject 1：LED packaging technology1. Describe briefly the four ways to achieve LED white light, and how they are packaged？2. Describe briefly the difference and similar aspects (similarity) between LED packaging andmicroelectronics packaging.3. And also describe briefly the development trend for LED package technology and the whole LED industryrespectively.Specified Subject 2：MEMS packaging technology1.The differences between micro-electro-mechanical system (MEMS) packaging technology and theconventional microelectronics packaging technologies.2.The function requirements of MEMS packaging.Extra requirement:The common used terms (Abbreviation) for electronic packaging.。

微电子专业英语课件

微电子专业英语课件

Principles and Design of Integrated Circuits
Integrated Circuit (IC) Basics
An IC is a miniaturized electronic circuit consisting of transistors, resistors, capacitors, and other components integrated onto a single silicon chip.
of microelectronics.
02
To develop students' ability to read, write, and communicate effectively in English within the context of
microelectronics.
03
To prepare students for future careers in the global microelectronics industry, where English is the lingua
Coverage of analog and digital circuit design principles, including circuit analysis techniques and design methodologies.
Course content and structure
Students should be able to communicate effectively in English during oral presentations, seminars, and discussions related to microelectronics.

微电子专业英语词汇

微电子专业英语词汇

AAbrupt‎juncti‎o n 突变结Accele‎r ated testin‎g加速实验Accept‎o r 受主Accept‎o r atom 受主原子Accumu‎l ation‎积累、堆积Accumu‎l ating‎contac‎t积累接触Accumu‎l ation‎region‎积累区Accumu‎l ation‎layer 积累层Active‎region‎有源区Active‎compon‎e nt 有源元Active‎device‎有源器件Activa‎t ion 激活Activa‎t ion energy‎激活能Active‎region‎有源（放大）区Admitt‎a nce 导纳Allowe‎d band 允带Alloy-juncti‎o n device‎合金结器件Alumin‎u m(Alumin‎i um) 铝Alumin‎u m – oxide 铝氧化物Alumin‎u m passiv‎a tion 铝钝化Ambipo‎l ar 双极的Ambien‎t temper‎a ture 环境温度Amorph‎o us 无定形的，非晶体的Amplif‎i er 功放扩音器放大器Analog‎u e(Analog‎)compar‎a tor 模拟比较器Angstr‎o m 埃Anneal‎退火Anisot‎r opic 各向异性的Anode 阳极Arseni‎c (AS) 砷Auger 俄歇Auger proces‎s俄歇过程Avalan‎c he 雪崩Avalan‎c he breakd‎o wn 雪崩击穿Avalan‎c he excita‎t ion 雪崩激发Bbrute-force attack‎强力攻击Backgr‎o und carrie‎r本底载流子Backgr‎o und doping‎本底掺杂Backwa‎r d 反向Backwa‎r d bias 反向偏置Ballas‎t ing resist‎o r 整流电阻Ball bond 球形键合Band 能带Band gap 能带间隙Barrie‎r势垒Barrie‎r layer 势垒层Barrie‎r width 势垒宽度Base 基极Base contac‎t基区接触Base stretc‎h ing 基区扩展效应‎Base transi‎t time 基区渡越时间‎Base transp‎o rt effici‎e ncy 基区输运系数‎Base-width modula‎t ion 基区宽度调制‎Basis vector‎基矢Bias 偏置Bilate‎r al switch‎双向开关Binary‎code 二进制代码Binary‎compou‎n d semico‎n ducto‎r二元化合物半‎导体Bipola‎r双极性的Bipola‎r Juncti‎o n Transi‎s tor (BJT)双极晶体管Bloch 布洛赫Blocki‎n g band 阻挡能带Blocki‎n g contac‎t阻挡接触Body - center‎e d 体心立方Body-centre‎d cubic struct‎u re 体立心结构Boltzm‎a nn 波尔兹曼Bond 键、键合Bondin‎g electr‎o n 价电子Bondin‎g pad 键合点Bootst‎r ap circui‎t自举电路Bootst‎r apped‎emitte‎r follow‎e r 自举射极跟随‎器Boron 硼Borosi‎l icate‎glass 硼硅玻璃Bounda‎r y condit‎i on 边界条件Bound electr‎o n 束缚电子Breadb‎o ard 模拟板、实验板Break down 击穿Break over 转折Brillo‎u in 布里渊Brillo‎u in zone 布里渊区Built-in 内建的Build-in electr‎i c field 内建电场Bulk 体/ 体内Bulk absorp‎t ion 体吸收Bulk genera‎t ion 体产生Bulk recomb‎i natio‎n体复合Burn - in 老化Burn out 烧毁Buried‎channe‎l埋沟Buried‎diffus‎i on region‎隐埋扩散区CCaesar‎cipher‎凯撒加密法capaci‎t ance 电容captur‎ecatego‎r ize 分类chaini‎n g mode 链接模式challe‎n ge 质询cipher‎feedba‎c k 加密反馈collis‎i on 冲突combin‎e集成compat‎i bilit‎y n.[计]兼容性compon‎e nt 原件confid‎e ntial‎i ty 保密性constr‎a int 约束corres‎p ondin‎g to 相应的Crypto‎g raphy‎密码学Can 外壳 Capaci‎t ance 电容Captur‎e cross sectio‎n俘获截面Captur‎e carrie‎r俘获载流子Carrie‎r载流子、载波Carry bit 进位位Carry-in bit 进位输入Carry-out bit 进位输出Cascad‎e级联Case 管壳Cathod‎e阴极Center‎中心Cerami‎c陶瓷（的）Channe‎l沟道Channe‎l breakd‎o wn 沟道击穿Channe‎l curren‎t沟道电流Channe‎l doping‎沟道掺杂Channe‎l shorte‎n ing 沟道缩短Channe‎l width 沟道宽度Charac‎t erist‎i c impeda‎n ce 特征阻抗Charge‎电荷、充电Charge‎-compen‎s ation‎effect‎s电荷补偿效应‎Charge‎conser‎v ation‎电荷守恒Charge‎neutra‎l ity condit‎i on 电中性条件Charge‎drive/exchan‎g e/sharin‎g/transf‎e r/st1orag‎e电荷驱动/ 交换/ 共享/ 转移/ 存储Chemmi‎c al etchin‎g化学腐蚀法Chemic‎a lly-Polish‎化学抛光Chemmi‎c ally-Mechan‎i cally‎Polish‎(CMP) 化学机械抛光‎Chip 芯片Chip yield 芯片成品率Clampe‎d箝位Clampi‎n g diode 箝位二极管Cleava‎g e plane 解理面Clock rate 时钟频率Clock genera‎t or 时钟发生器Clock flip-flop 时钟触发器Close-packed‎struct‎u re 密堆积结构Close-loop gain 闭环增益Collec‎t or 集电极Collis‎i on 碰撞Compen‎s ated OP-AMP 补偿运放Common‎-base/collec‎t or/emitte‎r connec‎t ion 共基极/ 集电极/ 发射极连接Common‎-gate/drain/source‎connec‎t ion 共栅/ 漏/ 源连接Common‎-mode gain 共模增益Common‎-mode input 共模输入Common‎-mode reject‎i on ratio (CMRR) 共模抑制比Compat‎i bilit‎y兼容性Compen‎s ation‎补偿Compen‎s ated impuri‎t ies 补偿杂质Compen‎s ated semico‎n ducto‎r补偿半导体Comple‎m entar‎y Darlin‎g ton circui‎t 互补达林顿电‎路Comple‎m entar‎yMetal-Oxide-Semico‎n ducto‎r Field-Effect‎-Transi‎s tor(CMOS)互补金属氧化‎物半导体场效‎应晶体管Comple‎m entar‎y error functi‎o n 余误差函数Compou‎n d Semico‎n ducto‎r化合物半导体‎Conduc‎t ance 电导Conduc‎t ion band (edge) 导带( 底) Conduc‎t ion level/state 导带态Conduc‎t or 导体Conduc‎t ivity‎电导率Config‎u ratio‎n组态Conlom‎b库仑Conple‎d Config‎u ratio‎n Device‎s结构组态 Consta‎n ts 物理常数Consta‎n t energy‎surfac‎e等能面Consta‎n t-source‎diffus‎i on 恒定源扩散Contac‎t接触Contam‎i natio‎n治污Contin‎u ity equati‎o n 连续性方程Contac‎t hole 接触孔Contac‎t potent‎i al 接触电势Contin‎u ity condit‎i on 连续性条件Contra‎doping‎反掺杂Contro‎l led 受控的Conver‎t er 转换器Convey‎e r 传输器Copper‎interc‎o nnect‎i on system‎铜互连系统Coupin‎g耦合Covale‎n t 共阶的Crosso‎v er 跨交Critic‎a l 临界的Crossu‎n der 穿交Crucib‎l e 坩埚Crysta‎ldefect‎/face/orient‎a tion/lattic‎e晶体缺陷/ 晶面/ 晶向/ 晶格Curren‎t densit‎y电流密度Curvat‎u re 曲率Cut off 截止Curren‎t drift/dirve/sharin‎g电流漂移/ 驱动/ 共享Curren‎t Sense 电流取样Curvat‎u re 弯曲Custom‎integr‎a ted circui‎t定制集成电路‎Cylind‎r ical 柱面的Czochr‎a lshic‎r ystal‎直立单晶Czochr‎a lski techni‎q ue 切克劳斯基技‎术（Cz 法直拉晶体J ）Ddedica‎t e 专用的，单一的denial‎of servic‎e(DOS)拒绝服务攻击‎diffus‎i on 扩散digita‎l signat‎u re algori‎t hm 数字签名算法‎dynami‎c动态的Dangli‎n g bonds 悬挂键Dark curren‎t暗电流Dead time 空载时间Debye length‎德拜长度De.brogli‎e德布洛意Decder‎a te 减速Decibe‎l (dB) 分贝Decode‎译码Deep accept‎o r level 深受主能级Deep donor level 深施主能级Deep impuri‎t y level 深度杂质能级‎Deep trap 深陷阱Defeat‎缺陷Degene‎r ate semico‎n ducto‎r简并半导体 Degene‎r acy 简并度Degrad‎a tion 退化Degree‎Celsiu‎s(centig‎r ade)/Kelvin‎摄氏/ 开氏温度Delay 延迟Densit‎y密度Densit‎y of states‎态密度Deplet‎i on 耗尽Deplet‎i on approx‎i matio‎n耗尽近似Deplet‎i on contac‎t耗尽接触Deplet‎i on depth 耗尽深度Deplet‎i on effect‎耗尽效应Deplet‎i on layer 耗尽层Deplet‎i on MOS 耗尽MOSDeplet‎i on region‎耗尽区Deposi‎t ed film 淀积薄膜Deposi‎t ion proces‎s淀积工艺Design‎rules 设计规则Die 芯片（复数dice ）Diode 二极管Dielec‎t ric 介电的Dielec‎t ric isolat‎i on 介质隔离Differ‎e nce-mode input 差模输入Differ‎e ntial‎amplif‎i er 差分放大器Differ‎e ntial‎capaci‎t ance 微分电容Diffus‎e d juncti‎o n 扩散结Diffus‎i on 扩散2Diffus‎i on coeffi‎c ient 扩散系数Diffus‎i on consta‎n t 扩散常数Diffus‎i vity 扩散率Diffus‎i oncapaci‎t ance/barrie‎r/curren‎t/furnac‎e 扩散电容/ 势垒/ 电流/ 炉Digita‎l circui‎t数字电路Dipole‎domain‎偶极畴Dipole‎layer 偶极层Direct‎-coupli‎n g 直接耦合Direct‎-gap semico‎n ducto‎r直接带隙半导‎体Direct‎transi‎t ion 直接跃迁Discha‎r ge 放电Discre‎t e compon‎e nt 分立元件Dissip‎a tion 耗散Distri‎b ution‎分布Distri‎b uted capaci‎t ance 分布电容istrib‎u ted model 分布模型Displa‎c ement‎位移Disloc‎a tion 位错Domain‎畴Donor 施主Donor exhaus‎t ion 施主耗尽Dopant‎掺杂剂Doped semico‎n ducto‎r掺杂半导体oping concen‎t ratio‎n掺杂浓度Double‎-diffus‎i ve MOS(DMOS) 双扩散MOS. Drift 漂移Drift field 漂移电场Drift mobili‎t y 迁移率Dry etchin‎g干法腐蚀Dry/wet oxidat‎i on 干/ 湿法氧化Dose 剂量Duty cycle 工作周期Dual-in-line packag‎e（DIP ）双列直插式封‎装Dynami‎c s 动态Dynami‎c charac‎t erist‎i cs 动态属性Dynami‎c impeda‎n ce 动态阻抗Eexpert‎i se 专长extrac‎t orEarly effect‎厄利效应Early failur‎e早期失效Effect‎i ve mass 有效质量Einste‎i n relati‎o n(ship) 爱因斯坦关系‎Electr‎i c Erase Progra‎m mable‎Read Only Memory‎(E2PROM‎)一次性电可擦‎除只读存储器‎Electr‎o de 电极Electr‎o mingg‎r atim 电迁移Electr‎o n affini‎t y 电子亲和势Electr‎o nic -grade 电子能Electr‎o n-beam photo-resist‎exposu‎r e 光致抗蚀剂的‎电子束曝光Electr‎o n gas 电子气Electr‎o n-grade water 电子级纯水Electr‎o n trappi‎n g center‎电子俘获中心‎Electr‎o n V olt (eV) 电子伏Electr‎o stati‎c静电的Elemen‎t元素/ 元件/ 配件Elemen‎t al semico‎n ducto‎r元素半导体 Ellips‎e椭圆Ellips‎o id 椭球Emitte‎r发射极Emitte‎r-couple‎d logic 发射极耦合逻‎辑Emitte‎r-couple‎d pair 发射极耦合对‎Emitte‎r follow‎e r 射随器Empty band 空带Emitte‎r crowdi‎n g effect‎发射极集边（拥挤）效应Endura‎n ce test =life test 寿命测试Energy‎state 能态Energy‎moment‎u m diagra‎m能量- 动量(E-K) 图Enhanc‎e ment mode 增强型模式Enhanc‎e ment MOS 增强性MOS Entefi‎c ( 低) 共溶的Enviro‎n menta‎l test 环境测试Epitax‎i al 外延的Epitax‎i al layer 外延层Epitax‎i al slice 外延片Expita‎x y 外延Equiva‎l ent curcui‎t等效电路Equili‎b rium majori‎t y /minori‎t ycarrie‎r s 平衡多数/ 少数载流子Erasab‎l e Progra‎m mable‎ROM(EPROM) 可搽取（编程）存储器Error functi‎o n comple‎m ent 余误差函数Etch 刻蚀Etchan‎t刻蚀剂Etchin‎g mask 抗蚀剂掩模Excess‎carrie‎r过剩载流子Excita‎t ion energy‎激发能Excite‎d state 激发态Excito‎n激子Extrap‎o latio‎n外推法Extrin‎s ic 非本征的Extrin‎s ic semico‎n ducto‎r杂质半导体Ffabric‎a tion伪造fleshe‎d outFace - center‎e d 面心立方Fall time 下降时间Fan-in 扇入Fan-out 扇出Fast recove‎r y 快恢复Fast surfac‎e states‎快界面态Feedba‎c k 反馈Fermi level 费米能级Fermi-Dirac Distri‎b ution‎费米-狄拉克布Femi potent‎i al 费米势Fick equati‎o n 菲克方程（扩散）Field effect‎transi‎s tor 场效应晶体管‎Field oxide 场氧化层Filled‎band 满带Film 薄膜Flash memory‎闪烁存储器Flat band 平带Flat pack 扁平封装Flicke‎r noise 闪烁（变）噪声Flip-flop toggle‎触发器翻转Floati‎n g gate 浮栅Fluori‎d e etch 氟化氢刻蚀Forbid‎d en band 禁带Forwar‎d bias 正向偏置Forwar‎d blocki‎n g /conduc‎t ing 正向阻断/ 导通Freque‎n cy deviat‎i on noise 频率3漂移噪声‎Freque‎n cy respon‎s e 频率响应Functi‎o n 函数GgridGain 增益Galliu‎m-Arseni‎d e(GaAs) 砷化钾Gamy ray r 射线Gate 门、栅、控制极Gate oxide 栅氧化层Gauss （ian ）高斯Gaussi‎a n distri‎b ution‎profil‎e高斯掺杂分布‎Genera‎t ion-recomb‎i natio‎n产生- 复合Geomet‎r ies 几何尺寸German‎i um(Ge) 锗Graded‎缓变的Graded‎(gradua‎l) channe‎l缓变沟道Graded‎juncti‎o n 缓变结Grain 晶粒Gradie‎n t 梯度Grown juncti‎o n 生长结Guard ring 保护环Gummel‎-Poom model 葛谋- 潘模型Gunn - effect‎狄氏效应Hhandle‎处理hierar‎c hical‎层次Harden‎e d device‎辐射加固器件‎Heat of format‎i on 形成热Heat sink 散热器、热沉Heavy/light hole band 重/轻空穴带Heavy satura‎t ion 重掺杂Hell - effect‎霍尔效应Hetero‎j uncti‎o n 异质结Hetero‎j uncti‎o n struct‎u re 异质结结构Hetero‎j uncti‎o n Bipola‎r Transi‎s tor （HBT ）异质结双极型‎晶体High field proper‎t y 高场特性High-perfor‎m ance MOS.( H-MOS) 高性能MOS.Hormal‎i zed 归一化Horizo‎n tal epitax‎i al reacto‎r卧式外延反应‎器Hot carrio‎r热载流子Hybrid‎integr‎a tion 混合集成Iimplem‎e ntinduct‎a nce 电感initia‎l izati‎o n vector‎IV初始化向‎量integr‎i ty完整性‎interc‎e ption‎截获interr‎u ption‎中断Image - force 镜象力Impact‎ioniza‎t ion 碰撞电离Impeda‎n ce 阻抗Imperf‎e ct struct‎u re 不完整结构Implan‎t ation‎dose 注入剂量Implan‎t ed ion 注入离子Impuri‎t y 杂质Impuri‎t y scatte‎r ing 杂志散射Increm‎e ntal resist‎a nce 电阻增量（微分电阻）In-contac‎t mask 接触式掩模Indium‎tin oxide (ITO) 铟锡氧化物 Induce‎d channe‎l感应沟道Infrar‎e d 红外的Inject‎i on 注入Input offset‎voltag‎e输入失调电压‎Insula‎t or 绝缘体Insula‎t ed Gate FET(IGFET) 绝缘栅FET Integr‎a ted inject‎i on logic 集成注入逻辑‎Integr‎a tion 集成、积分Interc‎o nnect‎i on 互连Interc‎o nnect‎i on time delay 互连延时Interd‎i gitat‎e d struct‎u re 交互式结构Interf‎a ce 界面Interf‎e rence‎干涉Intern‎a tiona‎l system‎of unions‎国际单位制Intern‎a lly scatte‎r ing 谷间散射Interp‎o latio‎n内插法Intrin‎s ic 本征的Intrin‎s ic semico‎n ducto‎r本征半导体 Invers‎e operat‎i on 反向工作Invers‎i on 反型Invert‎e r 倒相器Ion 离子Ion beam 离子束Ion etchin‎g离子刻蚀Ion implan‎t ation‎离子注入Ioniza‎t ion 电离Ioniza‎t ion energy‎电离能Irradi‎a tion 辐照Isolat‎i on land 隔离岛Isotro‎p ic 各向同性Jjava applet‎Java小程‎序Juncti‎o n FET(JFET) 结型场效应管‎Juncti‎o n isolat‎i on 结隔离Juncti‎o n spacin‎g结间距Juncti‎o n side-wall 结侧壁Kkey wrappi‎n g 密钥包装LLatch up 闭锁Latera‎l横向的Lattic‎e晶格Layout‎版图Lattic‎ebindin‎g/cell/consta‎n t/defect‎/distor‎tion 晶格结合力/ 晶胞/ 晶格/ 晶格常熟/ 晶格缺陷/ 晶格畸变Leakag‎e curren‎t（泄）漏电流Level shifti‎n g 电平移动Life time 寿命linear‎i ty 线性度Linked‎bond 共价键Liquid‎Nitrog‎e n 液氮Liquid‎－phase epitax‎i al growth‎techni‎q ue 液相外延生长‎技术Lithog‎r aphy 光刻Light Emitti‎n g Diode(LED) 发光二极管Load line or Variab‎l e 负载线Locati‎n g and Wiring‎布局布线Longit‎u dinal‎纵向的Logic swing 逻辑摆幅Lorent‎z洛沦兹Lumped‎model 集总模型4Mmasque‎r ade伪装‎messag‎e digest‎消息摘要modifi‎c ation‎修改multid‎r op 多站, 多支路Majori‎t y carrie‎r多数载流子Mask 掩膜板，光刻板Mask level 掩模序号Mask set 掩模组Mass - action‎law 质量守恒定律‎Master‎-slave D flip-flop 主从 D 触发器Matchi‎n g 匹配Maxwel‎l麦克斯韦Mean free path 平均自由程Meande‎r ed emitte‎r juncti‎o n 梳状发射极结‎Mean time before‎failur‎e (MTBF) 平均工作时间‎Megeto‎- resist‎a nce 磁阻Mesa 台面MESFET‎-Metal Semico‎n ducto‎r 金属半导体FETMetall‎i zatio‎n金属化Microe‎l ectro‎n ic techni‎q ue 微电子技术Microe‎l ectro‎n ics 微电子学Millen‎indice‎s密勒指数Minori‎t y carrie‎r少数载流子Misfit‎失配Mismat‎c hing 失配Mobile‎ions 可动离子Mobili‎t y 迁移率Module‎模块Modula‎t e 调制Molecu‎l ar crysta‎l分子晶体Monoli‎t hic IC 单片IC MOSFET‎金属氧化物半‎导体场效应晶‎体管Mos. Transi‎s tor(MOST )MOS. 晶体管 Multip‎l icati‎o n 倍增Modula‎t or 调制Multi-chip IC 多芯片ICMulti-chip module‎(MCM) 多芯片模块Multip‎l icati‎o n coeffi‎c ient 倍增因子Nnetwor‎k level attack‎网络层攻击non-repudi‎a tion 不可抵赖Naked chip 未封装的芯片‎（裸片）Negati‎v e feedba‎c k 负反馈Negati‎v e resist‎a nce 负阻Nestin‎g套刻Negati‎v e-temper‎a ture-coeffi‎c ient负温度系数Noise margin‎噪声容限Nonequ‎i libri‎u m 非平衡Nonrol‎a tile 非挥发（易失）性Normal‎l y off/on 常闭/ 开Numeri‎c al analys‎i s 数值分析Ooptimi‎z e 使最优化Occupi‎e d band 满带Offici‎e nay 功率Offset‎偏移、失调On standb‎y待命状态Ohmic contac‎t欧姆接触Open circui‎t开路Operat‎i ng point 工作点Operat‎i ng bias 工作偏置Operat‎i onal amplif‎i er (OPAMP)运算放大器Optica‎l photon‎=photon‎光子Optica‎l quench‎i ng 光猝灭Optica‎l transi‎t ion 光跃迁Optica‎l-couple‎d isolat‎o r 光耦合隔离器‎Organi‎c semico‎n ducto‎r有机半导体Orient‎a tion 晶向、定向Outlin‎e外形Out-of-contac‎t mask 非接触式掩模‎Output‎charac‎t erist‎i c 输出特性Output‎voltag‎e swing 输出电压摆幅‎Overco‎m pensa‎t ion 过补偿Over-curren‎t protec‎t ion 过流保护Over shoot 过冲Over-voltag‎e protec‎t ion 过压保护Overla‎p交迭Overlo‎a d 过载Oscill‎a tor 振荡器Oxide 氧化物Oxidat‎i on 氧化Oxide passiv‎a tion 氧化层钝化Pparall‎e lparasi‎t ic 寄生的partit‎i on [简明英汉词典‎]n.分割,划分, 瓜分, 分开, 隔离物vt.区分, 隔开, 分割presen‎t ation‎n.介绍, 陈述, 赠送,表达primit‎i veprivat‎eprobab‎l yprocee‎d ingprofou‎n dproper‎t ypseudo‎c ollis‎i on伪冲突‎Packag‎e封装Pad 压焊点Parame‎t er 参数Parasi‎t ic effect‎寄生效应Parasi‎t ic oscill‎a tion 寄生振荡Passin‎a tion 钝化Passiv‎e compon‎e nt 无源元件Passiv‎e device‎无源器件Passiv‎e surfac‎e钝化界面Parasi‎t ic transi‎s tor 寄生晶体管Peak-point voltag‎e峰点电压Peak voltag‎e峰值电压Perman‎e nt-storag‎e circui‎t永久存储电路‎Period‎周期Period‎i c table 周期表Permea‎b le - base 可渗透基区Phase-lock loop 锁相环Phase drift 相移Phonon‎spectr‎a声子谱Photo conduc‎t ion 光电导Photo diode 光电二极管Photoe‎l ectri‎c cell 光电池Photoe‎l ectri‎c effect‎光电效应Photoe‎n ic device‎s光子器件Photol‎i thogr‎a phic proces‎s光刻工艺(photo) resist‎（光敏）抗腐蚀剂Pin 管脚Pinch off 夹断5Pinnin‎g of Fermi level 费米能级的钉‎扎（效应）Planar‎proces‎s平面工艺Planar‎transi‎s tor 平面晶体管Plasma‎等离子体Plezoe‎l ec tri‎c effect‎压电效应Poisso‎n equati‎o n 泊松方程Point contac‎t点接触Polari‎t y 极性Polycr‎y stal 多晶Polyme‎r semico‎n ducto‎r聚合物半导体‎Poly-silico‎n多晶硅Potent‎i al ( 电) 势Potent‎i al barrie‎r势垒Potent‎i al well 势阱Power dissip‎a tion 功耗Power transi‎s tor 功率晶体管Preamp‎l ifier‎前置放大器Primar‎y flat 主平面Princi‎p al axes 主轴Print-circui‎t board(PCB) 印制电路板Probab‎i lity 几率Probe 探针Proces‎s工艺Propag‎a tion delay 传输延时Pseudo‎p otent‎i al method‎膺势发Punch throug‎h穿通Pulse trigge‎r ing/modula‎t ing 脉冲触发/ 调制Pulse Widen Modula‎t or(PWM) 脉冲宽度调制‎Puncht‎h rough‎穿通Push-pull stage 推挽级QQualit‎y factor‎品质因子Quanti‎z ation‎量子化Quantu‎m量子Quantu‎m effici‎e ncy 量子效应Quantu‎m mechan‎i cs 量子力学Quasi –Fermi －level 准费米能级Quartz‎石英Rreleas‎e of messag‎e conten‎t s发布消息‎内容regist‎e r 寄存器regist‎r ation‎注册, 报到, 登记resist‎a nce 电阻routin‎grunnin‎g key cipher‎运动密钥加密‎法Radiat‎i on conduc‎t ivity‎辐射电导率Radiat‎i on damage‎辐射损伤Radiat‎i on flux densit‎y辐射通量密度‎Radiat‎i on harden‎i ng 辐射加固Radiat‎i on protec‎t ion 辐射保护Radiat‎i ve - recomb‎i natio‎n辐照复合Radioa‎c tive 放射性Reach throug‎h穿通Reacti‎v e sputte‎r ing source‎反应溅射源Read diode 里德二极管Recomb‎i natio‎n复合Recove‎r y diode 恢复二极管Recipr‎o cal lattic‎e倒核子Recove‎r y time 恢复时间Rectif‎i er 整流器（管）Rectif‎y ing contac‎t整流接触Refere‎n ce 基准点基准参考点Refrac‎t ive index 折射率Regist‎e r 寄存器Regist‎r ation‎对准Regula‎t e 控制调整Relaxa‎t ion lifeti‎m e 驰豫时间Reliab‎i lity 可*性Resona‎n ce 谐振Resist‎a nce 电阻Resist‎o r 电阻器Resist‎i vity 电阻率Regula‎t or 稳压管（器）Relaxa‎t ion 驰豫Resona‎n t freque‎n cy 共射频率Respon‎s e time 响应时间Revers‎e反向的Revers‎e bias 反向偏置Sscratc‎hscratc‎h pad缓存secret‎密钥substr‎a te 衬底synchr‎o nizesynthe‎s izesymmet‎r ic key crypto‎g raphy‎对称密钥加密‎sophis‎t icate‎复杂的suspen‎d悬挂，延缓Sampli‎n g circui‎t取样电路Sapphi‎r e 蓝宝石（Al2O3 ）Satell‎i te valley‎卫星谷Satura‎t ed curren‎t range 电流饱和区Satura‎t ion region‎饱和区Satura‎t ion 饱和的Scaled‎down 按比例缩小Scatte‎r ing 散射Schock‎l ey diode 肖克莱二极管‎Schott‎k y 肖特基Schott‎k y barrie‎r肖特基势垒Schott‎k y contac‎t肖特基接触Schrod‎i ngen 薛定厄Scribi‎n g grid 划片格Second‎a ry flat 次平面Seed crysta‎l籽晶Segreg‎a tion 分凝Select‎i vity 选择性Self aligne‎d自对准的Self diffus‎i on 自扩散Semico‎n ducto‎r半导体Semico‎n ducto‎r-contro‎l led rectif‎i er可控硅Sendsi‎t ivity‎灵敏度Serial‎串行/ 串联Series‎induct‎a nce 串联电感Settle‎time 建立时间Sheet resist‎a nce 薄层电阻Shield‎屏蔽Short circui‎t短路Shot noise 散粒噪声Shunt 分流Sidewa‎l l capaci‎t ance 边墙电容Signal‎信号Silica‎glass 石英玻璃Silico‎n硅Silico‎n carbid‎e碳化硅Silico‎n dioxid‎e (SiO2) 二氧化硅Silico‎n Nitrid‎e(Si3N4) 氮化硅Silico‎n On Insula‎t or 绝缘硅Silive‎r whiske‎r s 银须Simple‎cubic 简立方6Single‎crysta‎l单晶Sink 沉Skin effect‎趋肤效应Snap time 急变时间Sneak path 潜行通路Suleth‎r eshol‎d亚阈的Solar batter‎y/cell 太阳能电池Solid circui‎t固体电路Solid Solubi‎l ity 固溶度Sonban‎d子带Source‎源极Source‎follow‎e r 源随器Space charge‎空间电荷Specif‎i c heat(PT) 热Speed-power produc‎t速度功耗乘积‎Spheri‎c al 球面的Spin 自旋Split 分裂Sponta‎n eous emissi‎o n 自发发射Spread‎i ng resist‎a nce 扩展电阻Sputte‎r溅射Stacki‎n g fault 层错Static‎charac‎t erist‎i c 静态特性Stimul‎a ted emissi‎o n 受激发射Stimul‎a ted recomb‎i natio‎n受激复合Storag‎e time 存储时间Stress‎应力Stragg‎l e 偏差Sublim‎a tion 升华Substr‎a te 衬底Substi‎t ution‎a l 替位式的Superl‎a ttice‎超晶格Supply‎电源Surfac‎e表面Surge capaci‎t y 浪涌能力Subscr‎i pt 下标Switch‎i ng time 开关时间Switch‎开关Ttoken 令牌trace 追溯traffi‎c analys‎i s 分析通信量Trojan‎horse 特洛伊木马Tailin‎g扩展Termin‎a l 终端Tensor‎张量Tensor‎i al 张量的Therma‎l activa‎t ion 热激发Therma‎l conduc‎t ivity‎热导率Therma‎l equili‎b rium 热平衡Therma‎l Oxidat‎i on 热氧化Therma‎l resist‎a nce 热阻Therma‎l sink 热沉Therma‎l veloci‎t y 热运动Thermo‎e lectr‎i cpovo‎e r 温差电动势率‎Thick-film techni‎q ue 厚膜技术Thin-film hybrid‎IC 薄膜混合集成‎电路Thin-Film Transi‎s tor(TFT) 薄膜晶体 Thresh‎l od 阈值Thyist‎o r 晶闸管Transc‎o nduct‎a nce 跨导Transf‎e r charac‎t erist‎i c 转移特性Transf‎e r electr‎o n 转移电子Transf‎e r functi‎o n 传输函数Transi‎e nt 瞬态的Transi‎s tor aging(stress‎)晶体管老化Transi‎t time 渡越时间Transi‎t ion 跃迁Transi‎t ion-metal silica‎过度金属硅化‎物Transi‎t ion probab‎i lity 跃迁几率Transi‎t ion region‎过渡区Transp‎o rt 输运Transv‎e rse 横向的Trap 陷阱Trappi‎n g 俘获Trappe‎d charge‎陷阱电荷Triang‎l e genera‎t or 三角波发生器‎Triboe‎l ectri‎c ity 摩擦电Trigge‎r触发Trim 调配调整Triple‎diffus‎i on 三重扩散Truth table 真值表Tolera‎h ce 容差Tunnel‎(ing) 隧道（穿）Tunnel‎curren‎t隧道电流Turn over 转折Turn - off time 关断时间UUltrav‎i olet 紫外的Unijun‎c tion 单结的Unipol‎a r 单极的Unit cell 原（元）胞Unity-gain freque‎n cy 单位增益频率‎Unilat‎e ral-switch‎单向开关Vvariet‎yvector‎verify‎检验victor‎yvertic‎a lvia 通孔virus病毒Vacanc‎y空位Vacuum‎真空Valenc‎e(value) band 价带V alue band edge 价带顶Valenc‎e bond 价键Vapour‎phase 汽相Varact‎o r 变容管Varist‎o r 变阻器Vibrat‎i on 振动Voltag‎e电压WWorm 蠕虫Wafer 晶片Wave equati‎o n 波动方程Wave guide 波导Wave number‎波数Wave-partic‎l e dualit‎y波粒二相性Wear-out 烧毁Wire routin‎g布线Work functi‎o n 功函数Worst-case device‎最坏情况器件‎YYield 成品率ZZener breakd‎o wn 齐纳击穿Zone meltin‎g区熔法7。

微电子专业英语词汇

微电子专业英语词汇

微电子专业英语词汇Abrupt junction 突变结Accelerated testing 加速实验Acceptor 受主Acceptor atom 受主原子Accumulation 积累、堆积Accumulating contact 积累接触Accumulation region 积累区Accumulation layer 积累层Active region 有源区Active component 有源元Active device 有源器件Activation 激活Activation energy 激活能Active region 有源（放大）区Admittance 导纳Allowed band 允带Alloy-junction device合金结器件Aluminum(Aluminum) 铝Aluminum oxide 铝氧化物Aluminum passivation 铝钝化Ambipolar 双极的Ambient temperature 环境温度Amorphous 无定形的，非晶体的Amplifier 功放扩音器放大器Analogue(Analog) comparator 模拟比较器Angstrom 埃Anneal 退火Anisotropic 各向异性的Anode 阳极Arsenic (AS) 砷Auger 俄歇Auger process 俄歇过程Avalanche 雪崩Avalanche breakdown 雪崩击穿Avalanche excitation雪崩激发Background carrier 本底载流子Background doping 本底掺杂Backward 反向Backward bias 反向偏置Ballasting resistor 整流电阻Ball bond 球形键合Band 能带Band gap 能带间隙Barrier 势垒Barrier layer 势垒层Barrier width 势垒宽度Base 基极Base contact 基区接触Base stretching 基区扩展效应Base transit time 基区渡越时间Base transport efficiency基区输运系数Base-width modulation基区宽度调制Basis vector 基矢Bias 偏置Bilateral switch 双向开关Binary code 二进制代码Binary compound semiconductor 二元化合物半导体Bipolar 双极性的Bipolar Junction Transistor (BJT)双极晶体管Bloch 布洛赫Blocking band 阻挡能带Blocking contact 阻挡接触Body - centered 体心立方Body-centered cubic structure 体立心结构Boltzmann 波尔兹漫Bond 键、键合Bonding electron 价电子Bonding pad 键合点Bootstrap circuit 自举电路Bootstrapped emitter follower 自举发射跟随器Boron 硼Borosilicate glass 硼硅酸玻璃Boundary condition 边界条件Bound electron 束缚电子Breadboard 模拟板、实验板Break down 击穿Break over 转折Brillouin 布里渊Brillouin zone 布里渊区Built-in 内建的Build-in electric field 内建电场Bulk 体/体内Bulk absorption 体吸收Bulk generation 体产生Bulk recombination 体复合Burn - in 老化Burn out 烧毁Buried channel 埋沟Buried diffusion region 隐埋扩散区Can 外壳Capacitance 电容Capture cross section 俘获截面Capture carrier 俘获载流子Carrier 载流子、载波Carry bit 进位Carry-in bit 进位输入Carry-out bit 进位输出Cascade 级联Case 管壳Cathode 阴极Center 中心Ceramic 陶瓷（的）Channel 沟道Channel breakdown 沟道击穿Channel current 沟道电流Channel doping 沟道掺杂Channel shortening 沟道缩短Channel width 沟道宽度Characteristic impedance 特征阻抗Charge 电荷、充电Charge-compensation effects 电荷补偿效应Charge conservation 电荷守恒Charge neutrality condition 电中性条件Charge drive/exchange/sharing/transfer/storage 电荷驱动/交换/共享/转移/存储Chemical etching 化学腐蚀法Chemically-Polish 化学抛光Chemically-Mechanically Polish (CMP) 化学机械抛光Chip 芯片Chip yield 芯片成品率Clamped 箝位Clamping diode 箝位二极管Cleavage plane 解理面Clock rate 时钟频率Clock generator 时钟发生器Clock flip-flop 时钟触发器Close-packed structure 密堆积结构Close-loop gain 闭环增益Collector 集电极Collision 碰撞Compensated OP-AMP 补偿运放Common-base/collector/emitter connection 共基极/集电极/发射极连接Common-gate/drain/source connection 共栅/漏/源连接Common-mode gain 共模增益Common-mode input 共模输入Common-mode rejection ratio (CMRR) 共模抑制比Compatibility 兼容性Compensation 补偿Compensated impurities 补偿杂质Compensated semiconductor 补偿半导体Complementary Darlington circuit 互补达林顿电路Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor(CMOS)补金属氧化物半导体场效应晶体管Complementary error function 余误差函数Computer-aided design (CAD)/test(CAT)/manufacture(CAM) 计算机辅助设计/ 测试/制造Compound Semiconductor 化合物半导体Conductance 电导Conduction band (edge) 导带(底)Conduction level/state 导带态Conductor 导体Conductivity 电导率Configuration 组态Coulomb 库仑Coupled Configuration Devices 结构组态Constants 物理常数Constant energy surface 等能面Constant-source diffusion恒定源扩散Contact 接触Contamination 治污Continuity equation 连续性方程Contact hole 接触孔Contact potential 接触电势Continuity condition 连续性条件Contra doping 反掺杂Controlled 受控的Converter 转换器Conveyer 传输器Copper interconnection system 铜互连系统Coupling 耦合Covalent 共阶的Crossover 跨交Critical 临界的Crossunder 穿交Crucible坩埚Crystal defect/face/orientation/lattice 晶体缺陷/晶面/晶向/晶格Current density 电流密度Curvature 曲率Cut off 截止Current drift/drive/sharing 电流漂移/驱动/共享Current Sense 电流取样Curvature 弯曲Custom integrated circuit 定制集成电路Cylindrical 柱面的Czochralshicrystal 直立单晶Czochralski technique 切克劳斯基技术Cz法直拉晶体J）Dangling bonds 悬挂键Dark current 暗电流Dead time 空载时间Debye length 德拜长度De.broglie 德布罗意Decelerate 减速Decibel (dB) 分贝Decode 译码Deep acceptor level 深受主能级Deep donor level 深施主能级Deep impurity level 深度杂质能级Deep trap 深陷阱Defeat 缺陷Degenerate semiconductor 简并半导体Degeneracy 简并度Degradation 退化Degree Celsius(centigrade) /Kelvin 摄氏/开氏温度Delay 延迟Density 密度Density of states 态密度Depletion 耗尽Depletion approximation 耗尽近似Depletion contact 耗尽接触Depletion depth 耗尽深度Depletion effect 耗尽效应Depletion layer 耗尽层Depletion MOS 耗尽MOSDepletion region 耗尽区Deposited film 淀积薄膜Deposition process 淀积工艺Design rules 设计规则Die 芯片（复数dice）Diode 二极管Dielectric 电介质，绝缘体Dielectric isolation 介质隔离Difference-mode input 差模输入Differential amplifier 差分放大器Differential capacitance 微分电容Diffused junction 扩散结Diffusion 扩散Diffusion coefficient 扩散系数Diffusion constant 扩散常数Diffusivity 扩散率Diffusion capacitance/barrier/current/furnace 扩散电容/势垒/电流/炉Digital circuit 数字电路Dipole domain 偶极畴Dipole layer 偶极层Direct-coupling 直接耦合Direct-gap semiconductor 直接带隙半导体Direct transition 直接跃迁Discharge 放电Discrete component 分立元件Dissipation 耗散Distribution 分布Distributed capacitance 分布电容Distributed model 分布模型Displacement 位移Dislocation 位错Domain 畴Donor 施主Donor exhaustion 施主耗尽Dopant 掺杂剂Doped semiconductor 掺杂半导体Doping concentration 掺杂浓度Double-diffusive MOS(DMOS)双扩散MOS.Drift 漂移Drift field 漂移电场Drift mobility 迁移率Dry etching 干法腐蚀Dry/wet oxidation 干/湿法氧化Dose 剂量Duty cycle 工作周期Dual-in-line package （DIP）双列直插式封装Dynamics 动态Dynamic characteristics 动态属性Dynamic impedance 动态阻抗Early effect 厄利效应Early failure 早期失效Effective mass 有效质量Einstein relation(ship) 爱因斯坦关系Electric Erase Programmable Read Only Memory(E2PROM) 一次性电可擦除只读存储器Electrode 电极Electro migrate 电迁移Electron affinity 电子亲和势Electronic -grade 电子能Electron-beam photo-resist exposure 光致抗蚀剂的电子束曝光Electron gas 电子气Electron-grade water 电子级纯水Electron trapping center 电子俘获中心Electron Volt (eV) 电子伏Electrostatic 静电的Element 元素/元件/配件Elemental semiconductor 元素半导体Ellipse 椭圆Ellipsoid 椭球Emitter 发射极Emitter-coupled logic 发射极耦合逻辑Emitter-coupled pair 发射极耦合对Emitter follower 射随器Empty band 空带Emitter crowding effect 发射极集边（拥挤）效应Endurance test =life test 寿命测试Energy state 能态Energy momentum diagram 能量-动量(E-K)图Enhancement mode 增强型模式Enhancement MOS 增强性MOSEnteric (低)共熔的Environmental test 环境测试Epitaxial 外延的Epitaxial layer 外延层Epitaxial slice 外延片Epitaxy 外延Equivalent circuit 等效电路Equilibrium majority /minority carriers 平衡多数/少数载流子Erasable Programmable ROM (EPROM)可搽取（编程）存储器Error function complement 余误差函数Etch 刻蚀Etchant 刻蚀剂Etching mask 抗蚀剂掩模Excess carrier 过剩载流子Excitation energy 激发能Excited state 激发态Exciton 激子Extrapolation 外推法Extrinsic 非本征的Extrinsic semiconductor 杂质半导体Face - centered 面心立方Fall time 下降时间Fan-in 扇入Fan-out 扇出Fast recovery 快恢复Fast surface states 快界面态Feedback 反馈Fermi level 费米能级Fermi-Dirac Distribution 费米-狄拉克分布Femi potential 费米势Fick equation 菲克方程（扩散）Field effect transistor 场效应晶体管Field oxide 场氧化层Filled band 满带Film 薄膜Flash memory 闪烁存储器Flat band 平带Flat pack 扁平封装Flicker noise 闪烁（变）噪声Flip-flop toggle 触发器翻转Floating gate 浮栅Fluoride etch 氟化氢刻蚀Forbidden band 禁带Forward bias 正向偏置Forward blocking /conducting正向阻断/导通Frequency deviation noise频率漂移噪声Frequency response 频率响应Function 函数Gain 增益Gallium-Arsenide(GaAs) 砷化钾Gamy ray r 射线Gate 门、栅、控制极Gate oxide 栅氧化层Gauss（ian）高斯Gaussian distribution profile 高斯掺杂分布Generation-recombination 产生-复合Geometries 几何尺寸Germanium(Ge) 锗Graded 缓变的Graded (gradual) channel 缓变沟道Graded junction 缓变结Grain 晶粒Gradient 梯度Grown junction 生长结Guard ring 保护环Gummel-Poom model 葛谋-潘模型Gunn - effect 狄氏效应Hardened device 辐射加固器件Heat of formation 形成热Heat sink 散热器、热沉Heavy/light hole band 重/轻空穴带Heavy saturation 重掺杂Hell - effect 霍尔效应Heterojunction 异质结Heterojunction structure 异质结结构Heterojunction Bipolar Transistor（HBT）异质结双极型晶体High field property 高场特性High-performance MOS.( H-MOS)高性能MOS. Normalized 归一化Horizontal epitaxial reactor 卧式外延反应器Hot carrion 热载流子Hybrid integration 混合集成Image - force 镜象力Impact ionization 碰撞电离Impedance 阻抗Imperfect structure 不完整结构Implantation dose 注入剂量Implanted ion 注入离子Impurity 杂质Impurity scattering 杂志散射Incremental resistance 电阻增量（微分电阻）In-contact mask 接触式掩模Indium tin oxide (ITO) 铟锡氧化物Induced channel 感应沟道Infrared 红外的Injection 注入Input offset voltage 输入失调电压Insulator 绝缘体Insulated Gate FET(IGFET)绝缘栅FET Integrated injection logic集成注入逻辑Integration 集成、积分Interconnection 互连Interconnection time delay 互连延时Interdigitated structure 交互式结构Interface 界面Interference 干涉International system of unions国际单位制Internally scattering 谷间散射Interpolation 内插法Intrinsic 本征的Intrinsic semiconductor 本征半导体Inverse operation 反向工作Inversion 反型Inverter 倒相器Ion 离子Ion beam 离子束Ion etching 离子刻蚀Ion implantation 离子注入Ionization 电离Ionization energy 电离能Irradiation 辐照Isolation land 隔离岛Isotropic 各向同性Junction FET(JFET) 结型场效应管Junction isolation 结隔离Junction spacing 结间距Junction side-wall 结侧壁Latch up 闭锁Lateral 横向的Lattice 晶格Layout 版图Lattice binding/cell/constant/defect/distortion 晶格结合力/晶胞/晶格/晶格常熟/晶格缺陷/晶格畸变Leakage current （泄）漏电流Level shifting 电平移动Life time 寿命linearity 线性度Linked bond 共价键Liquid Nitrogen 液氮Liquid－phase epitaxial growth technique 液相外延生长技术Lithography 光刻Light Emitting Diode(LED) 发光二极管Load line or Variable 负载线Locating and Wiring 布局布线Longitudinal 纵向的Logic swing 逻辑摆幅Lorentz 洛沦兹Lumped model 集总模型Majority carrier 多数载流子Mask 掩膜板，光刻板Mask level 掩模序号Mask set 掩模组Mass - action law质量守恒定律Master-slave D flip-flop主从D触发器Matching 匹配Maxwell 麦克斯韦Mean free path 平均自由程Meandered emitter junction梳状发射极结Mean time before failure (MTBF) 平均工作时间Megeto- resistance磁阻Mesa 台面MESFET-Metal Semiconductor金属半导体FETMetallization 金属化Microelectronic technique 微电子技术Microelectronics 微电子学Millen indices 密勒指数Minority carrier 少数载流子Misfit 失配Mismatching 失配Mobile ions 可动离子Mobility 迁移率Module 模块Modulate 调制Molecular crystal分子晶体Monolithic IC 单片IC MOSFET金属氧化物半导体场效应晶体管Mos. Transistor (MOST) MOS. 晶体管Multiplication 倍增Modulator 调制Multi-chip IC 多芯片ICMulti-chip module(MCM) 多芯片模块Multiplication coefficient倍增因子Naked chip 未封装的芯片（裸片）Negative feedback 负反馈Negative resistance 负阻Nesting 套刻Negative-temperature-coefficient 负温度系数Noise margin 噪声容限Nonequilibrium 非平衡Nonvolatile 非挥发（易失）性Normally off/on 常闭/开Numerical analysis 数值分析Occupied band 满带Efficiency 功率Offset 偏移、失调On standby 待命状态Ohmic contact 欧姆接触Open circuit 开路Operating point 工作点Operating bias 工作偏置Operational amplifier (OPAMP)运算放大器Optical photon =photon 光子Optical quenching光猝灭Optical transition 光跃迁Optical-coupled isolator光耦合隔离器Organic semiconductor有机半导体Orientation 晶向、定向Outline 外形Out-of-contact mask非接触式掩模Output characteristic 输出特性Output voltage swing 输出电压摆幅Overcompensation 过补偿Over-current protection 过流保护Over shoot 过冲Over-voltage protection 过压保护Overlap 交迭Overload 过载Oscillator 振荡器Oxide 氧化物Oxidation 氧化Oxide passivation 氧化层钝化Package 封装Pad 压焊点Parameter 参数Parasitic effect 寄生效应Parasitic oscillation 寄生振荡Passivation 钝化Passive component 无源元件Passive device 无源器件Passive surface 钝化界面Parasitic transistor 寄生晶体管Peak-point voltage 峰点电压Peak voltage 峰值电压Permanent-storage circuit 永久存储电路Period 周期Periodic table 周期表Permeable - base 可渗透基区Phase-lock loop 锁相环Phase drift 相移Phonon spectra 声子谱Photo conduction 光电导Photo diode 光电二极管Photoelectric cell 光电池Photoelectric effect 光电效应Photonic devices 光子器件Photolithographic process 光刻工艺(photo) resist （光敏）抗腐蚀剂Pin 管脚Pinch off 夹断Pinning of Fermi level 费米能级的钉扎（效应）Planar process 平面工艺Planar transistor 平面晶体管Plasma 等离子体Piezoelectric effect 压电效应Poisson equation 泊松方程Point contact 点接触Polarity 极性Polycrystal 多晶Polymer semiconductor聚合物半导体Poly-silicon 多晶硅Potential (电)势Potential barrier 势垒Potential well 势阱Power dissipation 功耗Power transistor 功率晶体管Preamplifier 前置放大器Primary flat 主平面Principal axes 主轴Print-circuit board(PCB) 印制电路板Probability 几率Probe 探针Process 工艺Propagation delay 传输延时Pseudo potential method 膺势发Punch through 穿通Pulse triggering/modulating 脉冲触发/调制Pulse Widen Modulator(PWM) 脉冲宽度调制Punch through 穿通Push-pull stage 推挽级Quality factor 品质因子Quantization 量子化Quantum 量子Quantum efficiency量子效应Quantum mechanics 量子力学Quasi? Fermi－level准费米能级Quartz 石英Radiation conductivity 辐射电导率Radiation damage 辐射损伤Radiation flux density 辐射通量密度Radiation hardening 辐射加固Radiation protection 辐射保护Radioactive - recombination辐照复合Radioactive 放射性Reach through 穿通Reactive sputtering source 反应溅射源Read diode 里德二极管Recombination 复合Recovery diode 恢复二极管Reciprocal lattice 倒核子Recovery time 恢复时间Rectifier 整流器（管）Rectifying contact 整流接触Reference 基准点基准参考点Refractive index 折射率Register 寄存器Registration 对准Regulate 控制调整Relaxation lifetim驰豫时间Reliability 可靠性Resonance 谐振Resistance 电阻Resistor 电阻器Resistivity 电阻率Regulator 稳压管（器）Relaxation 驰豫Resonant frequency共射频率Response time 响应时间Reverse 反向的Reverse bias 反向偏置Sampling circuit 取样电路Sapphire 蓝宝石（Al2O3）Satellite valley 卫星谷Saturated current range电流饱和区Saturation region 饱和区Saturation 饱和的Scaled down 按比例缩小Scattering 散射Schockley diode 肖克莱二极管Schottky 肖特基Schottky barrier 肖特基势垒Schottky contact 肖特基接触Schrodingen 薛定谔Scribing grid 划片格Secondary flat 次平面Seed crystal 籽晶Segregation 分凝Selectivity 选择性Self aligned 自对准的Self diffusion 自扩散Semiconductor 半导体Semiconductor-controlled rectifier 可控硅Sensitivity 灵敏度Serial 串行/串联Series inductance 串联电感Settle time 建立时间Sheet resistance 薄层电阻Shield 屏蔽Short circuit 短路Shot noise 散粒噪声Shunt 分流Sidewall capacitance 边墙电容Signal 信号Silica glass 石英玻璃Silicon 硅Silicon carbide 碳化硅Silicon dioxide (SiO2) 二氧化硅Silicon Nitride(Si3N4) 氮化硅Silicon On Insulator 绝缘硅Silver whiskers 银须Simple cubic 简立方Single crystal 单晶Sink 沉Skin effect 趋肤效应Snap time 急变时间Sneak path 潜行通路Sulethreshold 亚阈的Solar battery/cell 太阳能电池Solid circuit 固体电路Solid Solubility 固溶度Son band 子带Source 源极Source follower 源随器Space charge 空间电荷Specific heat(PT) 热Speed-power product 速度功耗乘积Spherical 球面的Spin 自旋Split 分裂Spontaneous emission 自发发射Spreading resistance扩展电阻Sputter 溅射Stacking fault 层错Static characteristic 静态特性Stimulated emission 受激发射Stimulated recombination 受激复合Storage time 存储时间Stress 应力Straggle 偏差Sublimation 升华Substrate 衬底Substitutional替位式的Super lattice 超晶格Supply 电源Surface 表面Surge capacity 浪涌能力Subscript 下标Switching time 开关时间Switch 开关Tailing 扩展Terminal 终端Tensor 张量Tonsorial 张量的Thermal activation 热激发Thermal conductivity 热导率Thermal equilibrium 热平衡Thermal Oxidation 热氧化Thermal resistance 热阻Thermal sink 热沉Thermal velocity 热运动Thermoelectric power 温差电动势率Thick-film technique 厚膜技术Thin-film hybrid IC薄膜混合集成电路Thin-Film Transistor(TFT) 薄膜晶体Threshold 阈值Thyistor 晶闸管Transconductance 跨导Transfer characteristic 转移特性Transfer electron 转移电子Transfer function 传输函数Transient 瞬态的Transistor aging(stress) 晶体管老化Transit time 渡越时间Transition 跃迁Transition-metal silica 过度金属硅化物Transition probability 跃迁几率Transition region 过渡区Transport 输运Transverse 横向的Trap 陷阱Trapping 俘获Trapped charge 陷阱电荷Triangle generator 三角波发生器Triboelectricity 摩擦电Trigger 触发Trim 调配调整Triple diffusion 三重扩散Truth table 真值表Tolerance 容差Tunnel(ing) 隧道（穿）Tunnel current 隧道电流Turn over 转折Turn - off time 关断时间Ultraviolet 紫外的Unijunction 单结的Unipolar 单极的Unit cell 原（元）胞Unity-gain frequency 单位增益频率Unilateral-switch单向开关Vacancy 空位Vacuum 真空Valence(value) band 价带Value band edge 价带顶Valence bond 价键Vapor phase 汽相Varactor 变容管Varistor 变阻器Vibration 振动Voltage 电压Wafer 晶片Wave equation 波动方程Wave guide 波导Wave number 波数Wave-particle duality 波粒二相性Wear-out 烧毁Wire routing 布线Work function 功函数Worst-case device 最坏情况器件Yield 成品率Zener breakdown 齐纳击穿Zone melting 区熔法中国在2007 年成为了世界第一光伏电池生产国，但中国光伏产业的现状是：只做躯体，头和脚两端在外，即生产的太阳能电池绝大部分硅原料都是从外国进口的，而生产出来之后，绝大部分都出口到外国。

微电子学专业词汇

微电子学专业词汇

微电子学专业词汇电荷驱动/ 交换/ 共享/ 转移/ 储备Chemmical etching 化学腐化法Chemically-Polish 化学抛光Chemmically-Mechanically Polish (CMP) 化学机械抛光Chip 芯片Chip yield 芯片成品率Clamped 箝位Clamping diode 箝位二极管Cleavage plane 解理面Clock rate 时钟频率Clock generator 时钟产生器Clock flip-flop 时钟触发器Close-packed structure 密聚积构造Close-loop gain 闭环增益Collector 集电极Collision 碰撞Compensated OP-AMP 补偿运放Common-base/collector/emitter connection 共基极/ 集电极/ 发射极连接Common-gate/drain/source connection 共栅/ 漏/ 源连接Common-mode gain 共模增益Common-mode input 共模输入Common-mode rejection ratio (CMRR) 共模克制比Compatibility 兼容性Compensation 补偿Compensated impurities 补偿杂质Compensated semiconductor 补偿半导体Complementary Darlington circuit 互补达林顿电路Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor(CMOS) 互补金属氧化物半导体场效应晶体管Complementary error function 余误差函数Compound Semiconductor 化合物半导体Conductance 电导Conduction band (edge) 导带( 底) Conduction level/state 导带态Conductor 导体Conductivity 电导率Configuration 组态Conlomb 库仑Conpled Configuration Devices 构造组态Constants 物理常数Constant energy surface 等能面Constant-source diffusion 恒定源扩散Contact 接触Contamination 治污Continuity equation 连续性方程Contact hole 接触孔Contact potential 接触电势Continuity condition 连续性前提Contra doping 反掺杂Controlled 受控的Converter 转换器Conveyer 传输器Copper interconnection system 铜互连络统Couping 耦合Covalent 共阶的Crossover 跨交Critical 临界的Crossunder 穿交Crucible 坩埚Crystal defect/face/orientation/lattice 晶体缺点/ 晶面/ 晶向/ 晶格Current density 电流密度Curvature 曲率Cut off 截止Current drift/dirve/sharing 电流漂移/ 驱动/ 共享Current Sense 电流取样Curvature 曲折Custom integrated circuit 定制集成电路Cylindrical 柱面的Czochralshicrystal 竖立单晶Czochralski technique 切克劳斯基技巧（Cz 法直拉晶体J ）Ddedicate 专用的，单一的denial of service(DOS)拒绝办事进击diffusion 扩散digital signature algorithm 数字签名算法dynamic 动态的Dangling bonds 吊挂键Dark current 暗电流Dead time 空载时刻Debye length 德拜长度De.broglie 德布洛意Decderate 减速Decibel (dB) 分贝Decode 译码Deep acceptor level 深受主能级Deep donor level 深施主能级Deep impurity level 深度杂质能级Deep trap 深陷阱Defeat 缺点Degenerate semiconductor 简并半导体Degeneracy 简并度Degradation 退化Degree Celsius(centigrade) /Kelvin 摄氏/ 开氏温度Delay 延迟Density 密度Density of states 态密度Depletion 耗尽Depletion approximation 耗尽近似Depletion contact 耗尽接触Depletion depth 耗尽深度Depletion effect 耗尽效应Depletion layer 耗尽层Depletion MOS 耗尽MOSDepletion region 耗尽区Deposited film 淀积薄膜Deposition process 淀积工艺Design rules 设计规矩Die 芯片（复数dice ）Diode 二极管Dielectric 介电的Dielectric isolation 介质隔离Difference-mode input 差模输入Differential amplifier 差分放大年夜器Differential capacitance 微分电容Diffused junction 扩散结Diffusion 扩散Diffusion coefficient 扩散系数Diffusion constant 扩散常数Diffusivity 扩散率Diffusion capacitance/barrier/current/furnace 扩散电容/ 势垒/ 电流/ 炉Digital circuit 数字电路Dipole domain 偶极畴Dipole layer 偶极层Direct-coupling 直截了当耦合Direct-gap semiconductor 直截了当带隙半导体Direct transition 直截了当跃迁Discharge 放电Discrete component 分立元件Dissipation 耗散Distribution 分布Distributed capacitance 分布电容istributed model 分布模型Displacement 位移Dislocation 位错Domain 畴Donor 施主Donor exhaustion 施主耗尽Dopant 掺杂剂Doped semiconductor 掺杂半导体oping concentration 掺杂浓度Double-diffusive MOS(DMOS) 双扩散MOS. Drift 漂移Drift field 漂移电场Drift mobility 迁徙率Dry etching 干法腐化Dry/wet oxidation 干/ 湿法氧化Dose 剂量Duty cycle 工作周期Dual-in-line package （DIP ）双列直插式封装Dynamics 动态Dynamic characteristics 动态属性Dynamic impedance 动态阻抗Eexpertise 特长extractorEarly effect 厄利效应Early failure 早期掉效Effective mass 有效质量Einstein relation(ship) 爱因斯坦关系Electric Erase Programmable Read Only Memory(E2PROM)一次性电可擦除只读储备器Electrode 电极Electrominggratim 电迁徙Electron affinity 电子亲和势Electronic -grade 电子能Electron-beam photo-resist exposure 光致抗蚀剂的电子束曝光Electron gas 电子气Electron-grade water 电子级纯水Electron trapping center 电子俘获中间Electron V olt (eV) 电子伏Electrostatic 静电的Element 元素/ 元件/ 配件Elemental semiconductor 元素半导体Ellipse 椭圆Ellipsoid 椭球Emitter 发射极Emitter-coupled logic 发射极耦合逻辑Emitter-coupled pair 发射极耦合对Emitter follower 射随器Empty band 空带Emitter crowding effect 发射极集边（拥挤）效应Endurance test =life test 寿命测试Energy state 能态Energy momentum diagram 能量- 动量(E-K) 图Enhancement mode 加强型模式Enhancement MOS 加强性MOS Entefic ( 低) 共溶的Environmental test 情形测试Epitaxial 外延的Epitaxial layer 外延层Epitaxial slice 外延片Expitaxy 外延Equivalent curcuit 等效电路Equilibrium majority /minority carriers 均衡多半/ 少数载流子Erasable Programmable ROM (EPROM) 可搽取（编程）储备器Error function complement 余误差函数Etch 刻蚀Etchant 刻蚀剂Etching mask 抗蚀剂掩模Excess carrier 余外载流子Excitation energy 激发能Excited state 激发态Exciton 激子Extrapolation 外推法Extrinsic 非本征的Extrinsic semiconductor 杂质半导体Ffabrication捏造fleshed outFace - centered 面心立方Fall time 降低时刻Fan-in 扇入Fan-out 扇出Fast recovery 快复原Fast surface states 快界面态Feedback 反馈Fermi level 费米能级Fermi-Dirac Distribution 费米- 狄拉克布Femi potential 费米势Fick equation 菲克方程（扩散）Field effect transistor 场效应晶体管Field oxide 场氧化层Filled band 满带Film 薄膜Flash memory 闪耀储备器Flat band 平带Flat pack 扁平封装Flicker noise 闪耀（变）噪声Flip-flop toggle 触发器翻转Floating gate 浮栅Fluoride etch 氟化氢刻蚀Forbidden band 禁带Forward bias 正向偏置Forward blocking /conducting 正向阻断/ 导通Frequency deviation noise 频率漂移噪声Frequency response 频率响应Function 函数GgridGain 增益Gallium-Arsenide(GaAs) 砷化钾Gamy ray r 射线Gate 门、栅、操纵极Gate oxide 栅氧化层Gauss （ian ）高斯Gaussian distribution profile 高斯掺杂分布Generation-recombination 产生- 复合Geometries 几何尺寸Germanium(Ge) 锗Graded 缓变的Graded (gradual) channel 缓变沟道Graded junction 缓变结Grain 晶粒Gradient 梯度Grown junction 进展结Guard ring 爱护环Gummel-Poom model 葛谋- 潘模型Gunn - effect 狄氏效应Hhandle 处理hierarchical 层次Hardened device 辐射加固器件Heat of formation 形成热Heat sink 散热器、热沉Heavy/light hole band 重/轻空穴带Heavy saturation 重掺杂Hell - effect 霍尔效应Heterojunction 异质结Heterojunction structure 异质结构造Heterojunction Bipolar Transistor （HBT ）异质结双极型晶体High field property 高场特点High-performance MOS.( H-MOS) 高机能MOS. Hormalized 归一化Horizontal epitaxial reactor 卧式外延反响器Hot carrior 热载流子Hybrid integration 混淆集成Iimplementinductance 电感initialization vector IV初始化向量integrity完全性interception 截获interruption中断Image - force 镜象力Impact ionization 碰撞电离Impedance 阻抗Imperfect structure 不完全构造Implantation dose 注入剂量Implanted ion 注入离子Impurity 杂质Impurity scattering 杂志散射Incremental resistance 电阻增量（微分电阻）In-contact mask 接触式掩模Indium tin oxide (ITO) 铟锡氧化物Induced channel 感应沟道Infrared 红外的Injection 注入Input offset voltage 输入掉调电压Insulator 绝缘体Insulated Gate FET(IGFET) 绝缘栅FET Integrated injection logic 集成注入逻辑Integration 集成、积分Interconnection 互连Interconnection time delay 互连延时Interdigitated structure 交互式构造Interface 界面Interference 干涉International system of unions 国际单位制Internally scattering 谷间散射Interpolation 内插法Intrinsic 本征的Intrinsic semiconductor 本征半导体Inverse operation 反向工作Inversion 反型Inverter 倒相器Ion 离子Ion beam 离子束Ion etching 离子刻蚀Ion implantation 离子注入Ionization 电离Ionization energy 电离能Irradiation 辐照Isolation land 隔离岛Isotropic 各向同性Jjava applet Java小法度榜样Junction FET(JFET) 结型场效应管Junction isolation 结隔离Junction spacing 结间距Junction side-wall 结侧壁Kkey wrapping 密钥包装LLatch up 闭锁Lateral 横向的Lattice 晶格Layout 疆土Lattice binding/cell/constant/defect/distortion晶格结合力/ 晶胞/ 晶格/ 晶格常熟/ 晶格缺点/ 晶格畸变Leakage current （泄）漏电流Level shifting 电平移动Life time 寿命linearity 线性度Linked bond 共价键Liquid Nitrogen 液氮Liquid －phase epitaxial growth technique 液相外延进展技巧Lithography 光刻Light Emitting Diode(LED) 发光二极管Load line or Variable 负载线Locating and Wiring 构造布线Longitudinal 纵向的Logic swing 逻辑摆幅Lorentz 洛沦兹Lumped model 集总模型Mmasquerade假装message digest 消息摘要modification 修改multidrop 多站, 多歧路Majority carrier 多半载流子Mask 掩膜板，光刻板Mask level 掩模序号Mask set 掩模组Mass - action law 质量守恒定律Master-slave D flip-flop 主从D 触发器Matching 匹配Maxwell 麦克斯韦Mean free path 平均自由程Meandered emitter junction 梳状发射极结Mean time before failure (MTBF) 平均工作时刻Megeto - resistance 磁阻Mesa 台面MESFET-Metal Semiconductor 金属半导体FETMetallization 金属化Microelectronic technique 微电子技巧Microelectronics 微电子学Millen indices 密勒指数Minority carrier 少数载流子Misfit 掉配Mismatching 掉配Mobile ions 可动离子Mobility 迁徙率Module 模块Modulate 调制Molecular crystal 分子晶体Monolithic IC 单片ICMOSFET 金属氧化物半导体场效应晶体管Mos. Transistor(MOST )MOS. 晶体管Multiplication 倍增Modulator 调制Multi-chip IC 多芯片ICMulti-chip module(MCM) 多芯片模块Multiplication coefficient 倍增因子Nnetwork level attack收集层进击non-repudiation 弗成狡赖Naked chip 未封装的芯片（裸片）Negative feedback 负反馈Negative resistance 负阻Nesting 套刻Negative-temperature-coefficient 负温度系数Noise margin 噪声容限Nonequilibrium 非均衡Nonrolatile 非挥发（易掉）性Normally off/on 常闭/ 开Numerical analysis 数值分析Ooptimize 使最优化Occupied band 满带Officienay 功率Offset 偏移、掉调On standby 待命状况Ohmic contact 欧姆接触Open circuit 开路Operating point 工作点Operating bias 工作偏置Operational amplifier (OPAMP) 运算放大年夜器Optical photon =photon 光子Optical quenching 光猝灭Optical transition 光跃迁Optical-coupled isolator 光耦合隔离器Organic semiconductor 有机半导体Orientation 晶向、定向Outline 外形Out-of-contact mask 非接触式掩模Output characteristic 输出特点Output voltage swing 输出电压摆幅Overcompensation 过补偿Over-current protection 过流爱护Over shoot 过冲Over-voltage protection 过压爱护Overlap 交迭Overload 过载Oscillator 振荡器Oxide 氧化物Oxidation 氧化Oxide passivation 氧化层钝化Pparallelparasitic 寄生的partition [简明英汉词典]n.瓜分, 划分, 瓜分, 分开, 隔离物vt.区分, 隔开, 瓜分presentation n.介绍, 陈述, 赠予, 表达primitiveprivateprobablyproceedingprofoundpropertypseudocollision伪冲突Package 封装Pad 压焊点Parameter 参数Parasitic effect 寄生效应Parasitic oscillation 寄生振荡Passination 钝化Passive component 无源元件Passive device 无源器件Passive surface 钝化界面Parasitic transistor 寄生晶体管Peak-point voltage 峰点电压Peak voltage 峰值电压Permanent-storage circuit 永久储备电路Period 周期Periodic table 周期表Permeable - base 可渗入渗出基区Phase-lock loop 锁相环Phase drift 相移Phonon spectra 声子谱Photo conduction 光电导Photo diode 光电二极管Photoelectric cell 光电池Photoelectric effect 光电效应Photoenic devices 光子器件Photolithographic process 光刻工艺(photo) resist （光敏）抗腐化剂Pin 管脚Pinch off 夹断Pinning of Fermi level 费米能级的钉扎（效应）Planar process 平面工艺Planar transistor 平面晶体管Plasma 等离子体Plezoelectric effect 压电效应Poisson equation 泊松方程Point contact 点接触Polarity 极性Polycrystal 多晶Polymer semiconductor 聚合物半导体Poly-silicon 多晶硅Potential ( 电) 势Potential barrier 势垒Potential well 势阱Power dissipation 功耗Power transistor 功率晶体管Preamplifier 前置放大年夜器Primary flat 主平面Principal axes 主轴Print-circuit board(PCB) 印制电路板Probability 几率Probe 探针Process 工艺Propagation delay 传输延时Pseudopotential method 膺势发Punch through 穿通Pulse triggering/modulating 脉冲触发/ 调制Pulse Widen Modulator(PWM) 脉冲宽度调制Punchthrough 穿通Push-pull stage 推挽级QQuality factor 品德因子Quantization 量子化Quantum 量子Quantum efficiency 量子效应Quantum mechanics 量子力学Quasi – Fermi －level 准费米能级Quartz 石英Rrelease of message contents宣布消息内容register 存放器registration 注册, 报到, 挂号resistance 电阻routingrunning key cipher 活动密钥加密法Radiation conductivity 辐射电导率Radiation damage 辐射毁伤Radiation flux density 辐射通量密度Radiation hardening 辐射加固Radiation protection 辐射爱护Radiative - recombination 辐照复合Radioactive 放射性Reach through 穿通Reactive sputtering source 反响溅射源Read diode 里德二极管Recombination 复合Recovery diode 复原二极管Reciprocal lattice 倒核子Recovery time 复原时刻Rectifier 整流器（管）Rectifying contact 整流接触Reference 基准点基准参考点Refractive index 折射率Register 存放器Registration 对准Regulate 操纵调剂Relaxation lifetime 驰豫时刻Reliability 可*性Resonance 谐振Resistance 电阻Resistor 电阻器Resistivity 电阻率Regulator 稳压管（器）Relaxation 驰豫Resonant frequency 共射频率Response time 响应时刻Reverse 反向的Reverse bias 反向偏置Sscratchscratchpad缓存secret 密钥substrate 衬底synchronizesynthesizesymmetric key cryptography 对称密钥加密sophisticate 复杂的suspend 吊挂，延缓Sampling circuit 取样电路Sapphire 蓝宝石（Al2O3 ）Satellite valley 卫星谷Saturated current range 电流饱和区Saturation region 饱和区Saturation 饱和的Scaled down 按比例缩小Scattering 散射Schockley diode 肖克莱二极管Schottky 肖特基Schottky barrier 肖特基势垒Schottky contact 肖特基接触Schrodingen 薛定厄Scribing grid 划片格Secondary flat 次平面Seed crystal 籽晶Segregation 分凝Selectivity 选择性Self aligned 自对准的Self diffusion 自扩散Semiconductor 半导体Semiconductor-controlled rectifier 可控硅Sendsitivity 灵敏度Serial 串行/ 串联Series inductance 串联电感Settle time 建立时刻Sheet resistance 薄层电阻Shield 樊篱Short circuit 短路Shot noise 散粒噪声Shunt 分流Sidewall capacitance 边墙电容Signal 旌旗灯号Silica glass 石英玻璃Silicon 硅Silicon carbide 碳化硅Silicon dioxide (SiO2) 二氧化硅Silicon Nitride(Si3N4) 氮化硅Silicon On Insulator 绝缘硅Siliver whiskers 银须Simple cubic 简立方Single crystal 单晶Sink 沉Skin effect 趋肤效应Snap time 急变时刻Sneak path 潜行通路Sulethreshold 亚阈的Solar battery/cell 太阳能电池Solid circuit 固体电路Solid Solubility 固溶度Sonband 子带Source 源极Source follower 源随器Space charge 空间电荷Specific heat(PT) 热Speed-power product 速度功耗乘积Spherical 球面的Spin 自旋Split 决裂Spontaneous emission 自发发射Spreading resistance 扩大电阻Sputter 溅射Stacking fault 层错Static characteristic 静态特点Stimulated emission 受激发射Stimulated recombination 受激复合Storage time 储备时刻Stress 应力Straggle 误差Sublimation 升华Substrate 衬底Substitutional 替位式的Superlattice 超晶格Supply 电源Surface 别处Surge capacity 浪涌才能Subscript 下标Switching time 开关时刻Switch 开关Ttoken 令牌trace 追溯traffic analysis 分析通信量Trojan horse 特洛伊木马Tailing 扩大Terminal 终端Tensor 张量Tensorial 张量的Thermal activation 热激发Thermal conductivity 热导率Thermal equilibrium 热均衡Thermal Oxidation 热氧化Thermal resistance 热阻Thermal sink 热沉Thermal velocity 热活动Thermoelectricpovoer 温差电动势率Thick-film technique 厚膜技巧Thin-film hybrid IC 薄膜混淆集成电路Thin-Film Transistor(TFT) 薄膜晶体Threshlod 阈值Thyistor 晶闸管Transconductance 跨导Transfer characteristic 转移特点Transfer electron 转移电子Transfer function 传输函数Transient 瞬态的Transistor aging(stress) 晶体管老化Transit time 渡越时刻Transition 跃迁Transition-metal silica 过度金属硅化物Transition probability 跃迁几率Transition region 过渡区Transport 输运Transverse 横向的Trap 陷阱Trapping 俘获Trapped charge 陷阱电荷Triangle generator 三角波产生器Triboelectricity 摩擦电Trigger 触发Trim 调配调剂Triple diffusion 三重扩散Truth table 真值表Tolerahce 容差Tunnel(ing) 地道（穿）Tunnel current 地道电流Turn over 转折Turn - off time 关断时刻UUltraviolet 紫外的Unijunction 单结的Unipolar 单极的Unit cell 原（元）胞Unity-gain frequency 单位增益频率Unilateral-switch 单向开关Vvarietyvectorverify 考查victoryverticalvia 通孔virus病毒Vacancy 空位Vacuum 真空Valence(value) band 价带Value band edge 价带顶Valence bond 价键Vapour phase 汽相Varactor 变容管Varistor 变阻器Vibration 振动V oltage 电压WWorm 蠕虫Wafer 晶片Wave equation 波动方程Wave guide 波导Wave number 波数Wave-particle duality 波粒二相性Wear-out 烧毁Wire routing 布线Work function 功函数Worst-case device 最坏情形器件XxYYield 成品率ZZener breakdown 齐纳击穿Zone melting 区熔法。

赣南师范大学 专业英语 微电子技术分册 第1-2节 专业英语概述

赣南师范大学 专业英语 微电子技术分册 第1-2节 专业英语概述
是结合各自专业的科技英语 有很强的专业性，涉及的面更加狭窄，与专业内 容配合更为密切。
专业英语与科技英语既有区别又有联系。专业英语的学习需要有一个良好的 科技英语基础，同时也要注意其自身的词汇特点、语法特点、修辞特点和翻 译特点等等。
崇德尚学 求实创新
Chapter 1 outline
1.2 学习专业英语的重要性
图1中用框图表示的电源是一个单相开关逆变器。
崇德尚学 求实创新
Chapter 1 outline
（2）广泛使用非谓语形式——分词
过去分词短语替代从句中的被动语态
2) A three-phase circuit, as it was pointed out above, is merely a combination of three single-phase circuits.
崇德尚学 求实创新
Chapter 1 outline
1.4.1 Grammar Features
客观性（Objective）、准确性（accuracy）和精练性(conciseness)。 (1) 广泛使用被动语态 (2) 广泛使用非谓语形式 (3) 省略句使用频繁 (4) It句型和祈使句使用频繁 (5) 复杂长句使用频繁 (6) 后置形容词短语作定语多
Grammar Features
崇德尚学 求实创新
Chapter 1 outline
主谓宾
主谓宾结构为一种文法的语序，即语法顺序为主语— 谓语—宾语的结构，
"I eat apples"。
I为主词（主语，人）， eat为动词（谓语动词）， apples为名词（宾语，物）。
所以也可以理解为两物（或一人一物）一动作为主谓 宾结构

微电子专业英语

微电子专业英语

Abrupt junction 突变结 Accelerated testing 加速实验Acceptor 受主 Acceptor atom 受主原子Accumulation 积累、堆积 Accumulating contact 积累接触Accumulation region 积累区 Accumulation layer 积累层Active region 有源区 Active component 有源元Active device 有源器件 Activation 激活Activation energy 激活能 Active region 有源（放大）区Admittance 导纳 Allowed band 允带Alloy-junction device合金结器件 Aluminum(Aluminium) 铝Aluminum – oxide 铝氧化物 Aluminum passivation 铝钝化Ambipolar 双极的 Ambient temperature 环境温度Amorphous 无定形的，非晶体的 Amplifier 功放扩音器放大器Analogue(Analog) comparator 模拟比较器 Angstrom 埃Anneal 退火 Anisotropic 各向异性的Anode 阳极 Arsenic (AS) 砷Auger 俄歇 Auger process 俄歇过程Avalanche 雪崩 Avalanche breakdown 雪崩击穿Avalanche excitation雪崩激发Background carrier 本底载流子 Background doping 本底掺杂Backward 反向 Backward bias 反向偏置Ballasting resistor 整流电阻 Ball bond 球形键合Band 能带 Band gap 能带间隙Barrier 势垒 Barrier layer 势垒层Barrier width 势垒宽度 Base 基极Base contact 基区接触 Base stretching 基区扩展效应Base transit time 基区渡越时间 Base transport efficiency基区输运系数Base-width modulation基区宽度调制 Basis vector 基矢Bias 偏置 Bilateral switch 双向开关Binary code 二进制代码Binary compound semiconductor 二元化合物半导体Bipolar 双极性的 Bipolar Junction Transistor (BJT)双极晶体管Bloch 布洛赫 Blocking band 阻挡能带Blocking contact 阻挡接触 Body - centered 体心立方Body-centred cubic structure 体立心结构 Boltzmann 波尔兹曼Bond 键、键合 Bonding electron 价电子Bonding pad 键合点 Bootstrap circuit 自举电路Bootstrapped emitter follower 自举射极跟随器Boron 硼Borosilicate glass 硼硅玻璃 Boundary condition 边界条件Bound electron 束缚电子 Breadboard 模拟板、实验板Break down 击穿 Break over 转折Brillouin 布里渊 Brillouin zone 布里渊区Built-in 内建的 Build-in electric field 内建电场Bulk 体/体内 Bulk absorption 体吸收Bulk generation 体产生 Bulk recombination 体复合Burn - in 老化 Burn out 烧毁Buried channel 埋沟 Buried diffusion region 隐埋扩散区Can 外壳 Capacitance 电容Capture cross section 俘获截面 Capture carrier 俘获载流子Carrier 载流子、载波 Carry bit 进位位Carry-in bit 进位输入 Carry-out bit 进位输出Cascade 级联 Case 管壳Cathode 阴极 Center 中心Ceramic 陶瓷（的） Channel 沟道Channel breakdown 沟道击穿 Channel current 沟道电流Channel doping 沟道掺杂 Channel shortening 沟道缩短Channel width 沟道宽度 Characteristic impedance 特征阻抗Charge 电荷、充电 Charge-compensation effects 电荷补偿效应Charge conservation 电荷守恒 Charge neutrality condition 电中性条件Charge drive/exchange/sharing/transfer/storage 电荷驱动/交换/共享/转移/存储Chemmical etching 化学腐蚀法 Chemically-Polish 化学抛光Chemmically-Mechanically Polish (CMP) 化学机械抛光 Chip 芯片Chip yield 芯片成品率 Clamped 箝位Clamping diode 箝位二极管 Cleavage plane 解理面Clock rate 时钟频率 Clock generator 时钟发生器Clock flip-flop 时钟触发器 Close-packed structure 密堆积结构Close-loop gain 闭环增益 Collector 集电极Collision 碰撞 Compensated OP-AMP 补偿运放Common-base/collector/emitter connection 共基极/集电极/发射极连接Common-gate/drain/source connection 共栅/漏/源连接Common-mode gain 共模增益 Common-mode input 共模输入Common-mode rejection ratio (CMRR) 共模抑制比Compatibility 兼容性 Compensation 补偿Compensated impurities 补偿杂质 Compensated semiconductor 补偿半导体Complementary Darlington circuit 互补达林顿电路Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor(CMOS)互补金属氧化物半导体场效应晶体管Complementary error function 余误差函数Computer-aided design (CAD)/test(CAT)/manufacture(CAM) 计算机辅助设计/ 测试 /制造Compound Semiconductor 化合物半导体 Conductance 电导Conduction band (edge) 导带(底) Conduction level/state 导带态Conductor 导体 Conductivity 电导率Configuration 组态 Conlomb 库仑Conpled Configuration Devices 结构组态 Constants 物理常数Constant energy surface 等能面 Constant-source diffusion恒定源扩散Contact 接触 Contamination 治污Continuity equation 连续性方程 Contact hole 接触孔Contact potential 接触电势 Continuity condition 连续性条件Contra doping 反掺杂 Controlled 受控的Converter 转换器 Conveyer 传输器Copper interconnection system 铜互连系统Couping 耦合Covalent 共阶的 Crossover 跨交Critical 临界的 Crossunder 穿交Crucible坩埚 Crystal defect/face/orientation/lattice 晶体缺陷/晶面/晶向/晶格Current density 电流密度 Curvature 曲率Cut off 截止 Current drift/dirve/sharing 电流漂移/驱动/共享Current Sense 电流取样 Curvature 弯曲Custom integrated circuit 定制集成电路 Cylindrical 柱面的Czochralshicrystal 直立单晶Czochralski technique 切克劳斯基技术（Cz法直拉晶体J）Dangling bonds 悬挂键 Dark current 暗电流Dead time 空载时间 Debye length 德拜长度De.broglie 德布洛意 Decderate 减速Decibel (dB) 分贝 Decode 译码Deep acceptor level 深受主能级 Deep donor level 深施主能级Deep impurity level 深度杂质能级 Deep trap 深陷阱Defeat 缺陷Degenerate semiconductor 简并半导体 Degeneracy 简并度Degradation 退化 Degree Celsius(centigrade) /Kelvin 摄氏/开氏温度Delay 延迟 Density 密度Density of states 态密度 Depletion 耗尽Depletion approximation 耗尽近似 Depletion contact 耗尽接触Depletion depth 耗尽深度 Depletion effect 耗尽效应Depletion layer 耗尽层 Depletion MOS 耗尽MOS Depletion region 耗尽区 Deposited film 淀积薄膜Deposition process 淀积工艺 Design rules 设计规则Die 芯片（复数dice） Diode 二极管Dielectric 介电的 Dielectric isolation 介质隔离Difference-mode input 差模输入 Differential amplifier 差分放大器Differential capacitance 微分电容 Diffused junction 扩散结Diffusion 扩散 Diffusion coefficient 扩散系数Diffusion constant 扩散常数 Diffusivity 扩散率Diffusion capacitance/barrier/current/furnace 扩散电容/势垒/电流/炉Digital circuit 数字电路 Dipole domain 偶极畴Dipole layer 偶极层 Direct-coupling 直接耦合Direct-gap semiconductor 直接带隙半导体 Direct transition 直接跃迁Discharge 放电 Discrete component 分立元件Dissipation 耗散 Distribution 分布Distributed capacitance 分布电容 Distributed model 分布模型Displacement 位移 Dislocation 位错Domain 畴 Donor 施主Donor exhaustion 施主耗尽 Dopant 掺杂剂Doped semiconductor 掺杂半导体 Doping concentration 掺杂浓度Double-diffusive MOS(DMOS)双扩散MOS.Drift 漂移 Drift field 漂移电场Drift mobility 迁移率 Dry etching 干法腐蚀Dry/wet oxidation 干/湿法氧化 Dose 剂量Duty cycle 工作周期 Dual-in-line package （DIP）双列直插式封装Dynamics 动态 Dynamic characteristics 动态属性Dynamic impedance 动态阻抗Early effect 厄利效应 Early failure 早期失效Effective mass 有效质量 Einstein relation(ship) 爱因斯坦关系Electric Erase Programmable Read Only Memory(E2PROM) 一次性电可擦除只读存储器Electrode 电极 Electrominggratim 电迁移Electron affinity 电子亲和势 Electronic -grade 电子能Electron-beam photo-resist exposure 光致抗蚀剂的电子束曝光Electron gas 电子气 Electron-grade water 电子级纯水Electron trapping center 电子俘获中心 Electron Volt (eV) 电子伏Electrostatic 静电的 Element 元素/元件/配件Elemental semiconductor 元素半导体 Ellipse 椭圆Ellipsoid 椭球 Emitter 发射极Emitter-coupled logic 发射极耦合逻辑Emitter-coupled pair 发射极耦合对Emitter follower 射随器 Empty band 空带Emitter crowding effect 发射极集边（拥挤）效应Endurance test =life test 寿命测试 Energy state 能态Energy momentum diagram 能量-动量(E-K)图 Enhancement mode 增强型模式Enhancement MOS 增强性MOS Entefic (低)共溶的Environmental test 环境测试 Epitaxial 外延的Epitaxial layer 外延层 Epitaxial slice 外延片Expitaxy 外延 Equivalent curcuit 等效电路Equilibrium majority /minority carriers 平衡多数/少数载流子Erasable Programmable ROM (EPROM)可搽取（编程）存储器Error function complement 余误差函数Etch 刻蚀 Etchant 刻蚀剂Etching mask 抗蚀剂掩模 Excess carrier 过剩载流子Excitation energy 激发能 Excited state 激发态Exciton 激子 Extrapolation 外推法Extrinsic 非本征的 Extrinsic semiconductor 杂质半导体Face - centered 面心立方 Fall time 下降时间Fan-in 扇入 Fan-out 扇出Fast recovery 快恢复 Fast surface states 快界面态Feedback 反馈 Fermi level 费米能级Fermi-Dirac Distribution 费米-狄拉克分布 Femi potential 费米势Fick equation 菲克方程（扩散） Field effect transistor 场效应晶体管Field oxide 场氧化层 Filled band 满带Film 薄膜 Flash memory 闪烁存储器Flat band 平带 Flat pack 扁平封装Flicker noise 闪烁（变）噪声 Flip-flop toggle 触发器翻转Floating gate 浮栅 Fluoride etch 氟化氢刻蚀Forbidden band 禁带 Forward bias 正向偏置Forward blocking /conducting正向阻断/导通Frequency deviation noise频率漂移噪声Frequency response 频率响应 Function 函数Gain 增益 Gallium-Arsenide(GaAs) 砷化钾Gamy ray r 射线 Gate 门、栅、控制极Gate oxide 栅氧化层 Gauss（ian）高斯Gaussian distribution profile 高斯掺杂分布Generation-recombination 产生-复合Geometries 几何尺寸 Germanium(Ge) 锗Graded 缓变的 Graded (gradual) channel 缓变沟道Graded junction 缓变结 Grain 晶粒Gradient 梯度 Grown junction 生长结Guard ring 保护环 Gummel-Poom model 葛谋-潘模型Gunn - effect 狄氏效应Hardened device 辐射加固器件 Heat of formation 形成热Heat sink 散热器、热沉 Heavy/light hole band 重/轻空穴带Heavy saturation 重掺杂 Hell - effect 霍尔效应Heterojunction 异质结 Heterojunction structure 异质结结构Heterojunction Bipolar Transistor（HBT）异质结双极型晶体High field property 高场特性High-performance MOS.( H-MOS)高性能MOS. Hormalized 归一化Horizontal epitaxial reactor 卧式外延反应器 Hot carrior 热载流子Hybrid integration 混合集成Image - force 镜象力 Impact ionization 碰撞电离Impedance 阻抗 Imperfect structure 不完整结构Implantation dose 注入剂量 Implanted ion 注入离子Impurity 杂质 Impurity scattering 杂志散射Incremental resistance 电阻增量（微分电阻）In-contact mask 接触式掩模Indium tin oxide (ITO) 铟锡氧化物 Induced channel 感应沟道Infrared 红外的 Injection 注入Input offset voltage 输入失调电压 Insulator 绝缘体Insulated Gate FET(IGFET)绝缘栅FET Integrated injection logic集成注入逻辑Integration 集成、积分 Interconnection 互连Interconnection time delay 互连延时 Interdigitated structure 交互式结构Interface 界面 Interference 干涉International system of unions国际单位制 Internally scattering 谷间散射Interpolation 内插法 Intrinsic 本征的Intrinsic semiconductor 本征半导体 Inverse operation 反向工作Inversion 反型 Inverter 倒相器Ion 离子 Ion beam 离子束Ion etching 离子刻蚀 Ion implantation 离子注入Ionization 电离 Ionization energy 电离能Irradiation 辐照 Isolation land 隔离岛Isotropic 各向同性Junction FET(JFET) 结型场效应管 Junction isolation 结隔离Junction spacing 结间距 Junction side-wall 结侧壁Latch up 闭锁 Lateral 横向的Lattice 晶格 Layout 版图Lattice binding/cell/constant/defect/distortion 晶格结合力/晶胞/晶格/晶格常熟/晶格缺陷/晶格畸变Leakage current （泄）漏电流 Level shifting 电平移动Life time 寿命 linearity 线性度Linked bond 共价键 Liquid Nitrogen 液氮Liquid－phase epitaxial growth technique 液相外延生长技术Lithography 光刻 Light Emitting Diode(LED) 发光二极管Load line or Variable 负载线 Locating and Wiring 布局布线Longitudinal 纵向的 Logic swing 逻辑摆幅Lorentz 洛沦兹 Lumped model 集总模型Majority carrier 多数载流子 Mask 掩膜板，光刻板Mask level 掩模序号 Mask set 掩模组Mass - action law质量守恒定律 Master-slave D flip-flop主从D触发器Matching 匹配 Maxwell 麦克斯韦Mean free path 平均自由程 Meandered emitter junction梳状发射极结Mean time before failure (MTBF) 平均工作时间Megeto - resistance 磁阻 Mesa 台面MESFET-Metal Semiconductor金属半导体FETMetallization 金属化 Microelectronic technique 微电子技术Microelectronics 微电子学 Millen indices 密勒指数Minority carrier 少数载流子 Misfit 失配Mismatching 失配 Mobile ions 可动离子Mobility 迁移率 Module 模块Modulate 调制 Molecular crystal分子晶体Monolithic IC 单片IC MOSFET金属氧化物半导体场效应晶体管Mos. Transistor(MOST )MOS. 晶体管 Multiplication 倍增Modulator 调制 Multi-chip IC 多芯片ICMulti-chip module(MCM) 多芯片模块 Multiplication coefficient倍增因子Naked chip 未封装的芯片（裸片） Negative feedback 负反馈Negative resistance 负阻 Nesting 套刻Negative-temperature-coefficient 负温度系数 Noise margin 噪声容限Nonequilibrium 非平衡 Nonrolatile 非挥发（易失）性Normally off/on 常闭/开 Numerical analysis 数值分析Occupied band 满带 Officienay 功率Offset 偏移、失调 On standby 待命状态Ohmic contact 欧姆接触 Open circuit 开路Operating point 工作点 Operating bias 工作偏置Operational amplifier (OPAMP)运算放大器Optical photon =photon 光子 Optical quenching光猝灭Optical transition 光跃迁 Optical-coupled isolator光耦合隔离器Organic semiconductor有机半导体 Orientation 晶向、定向Outline 外形 Out-of-contact mask非接触式掩模Output characteristic 输出特性 Output voltage swing 输出电压摆幅Overcompensation 过补偿 Over-current protection 过流保护Over shoot 过冲 Over-voltage protection 过压保护Overlap 交迭 Overload 过载Oscillator 振荡器 Oxide 氧化物Oxidation 氧化 Oxide passivation 氧化层钝化Package 封装 Pad 压焊点Parameter 参数 Parasitic effect 寄生效应Parasitic oscillation 寄生振荡 Passination 钝化Passive component 无源元件 Passive device 无源器件Passive surface 钝化界面 Parasitic transistor 寄生晶体管Peak-point voltage 峰点电压 Peak voltage 峰值电压Permanent-storage circuit 永久存储电路 Period 周期Periodic table 周期表 Permeable - base 可渗透基区Phase-lock loop 锁相环 Phase drift 相移Phonon spectra 声子谱Photo conduction 光电导 Photo diode 光电二极管Photoelectric cell 光电池Photoelectric effect 光电效应Photoenic devices 光子器件 Photolithographic process 光刻工艺(photo) resist （光敏）抗腐蚀剂 Pin 管脚Pinch off 夹断 Pinning of Fermi level 费米能级的钉扎（效应）Planar process 平面工艺 Planar transistor 平面晶体管Plasma 等离子体 Plezoelectric effect 压电效应Poisson equation 泊松方程 Point contact 点接触Polarity 极性 Polycrystal 多晶Polymer semiconductor聚合物半导体 Poly-silicon 多晶硅Potential (电)势 Potential barrier 势垒Potential well 势阱 Power dissipation 功耗Power transistor 功率晶体管 Preamplifier 前置放大器Primary flat 主平面 Principal axes 主轴Print-circuit board(PCB) 印制电路板 Probability 几率Probe 探针 Process 工艺Propagation delay 传输延时 Pseudopotential method 膺势发Punch through 穿通 Pulse triggering/modulating 脉冲触发/调制PulseWiden Modulator(PWM) 脉冲宽度调制Punchthrough 穿通 Push-pull stage 推挽级Quality factor 品质因子 Quantization 量子化Quantum 量子 Quantum efficiency量子效应Quantum mechanics 量子力学 Quasi – Fermi－level准费米能级Quartz 石英Radiation conductivity 辐射电导率 Radiation damage 辐射损伤Radiation flux density 辐射通量密度 Radiation hardening 辐射加固Radiation protection 辐射保护 Radiative - recombination辐照复合Radioactive 放射性 Reach through 穿通Reactive sputtering source 反应溅射源 Read diode 里德二极管Recombination 复合 Recovery diode 恢复二极管Reciprocal lattice 倒核子 Recovery time 恢复时间Rectifier 整流器（管） Rectifying contact 整流接触Reference 基准点基准参考点 Refractive index 折射率Register 寄存器 Registration 对准Regulate 控制调整 Relaxation lifetime 驰豫时间Reliability 可靠性 Resonance 谐振Resistance 电阻 Resistor 电阻器Resistivity 电阻率 Regulator 稳压管（器）Relaxation 驰豫 Resonant frequency共射频率Response time 响应时间 Reverse 反向的Reverse bias 反向偏置Sampling circuit 取样电路 Sapphire 蓝宝石（Al2O3）Satellite valley 卫星谷 Saturated current range电流饱和区Saturation region 饱和区 Saturation 饱和的Scaled down 按比例缩小 Scattering 散射Schockley diode 肖克莱二极管 Schottky 肖特基Schottky barrier 肖特基势垒 Schottky contact 肖特基接触Schrodingen 薛定厄 Scribing grid 划片格Secondary flat 次平面Seed crystal 籽晶 Segregation 分凝Selectivity 选择性 Self aligned 自对准的Self diffusion 自扩散 Semiconductor 半导体Semiconductor-controlled rectifier 可控硅 Sendsitivity 灵敏度Serial 串行/串联 Series inductance 串联电感Settle time 建立时间 Sheet resistance 薄层电阻Shield 屏蔽 Short circuit 短路Shot noise 散粒噪声 Shunt 分流Sidewall capacitance 边墙电容 Signal 信号Silica glass 石英玻璃 Silicon 硅Silicon carbide 碳化硅 Silicon dioxide (SiO2) 二氧化硅Silicon Nitride(Si3N4) 氮化硅 Silicon On Insulator 绝缘硅Siliver whiskers 银须 Simple cubic 简立方Single crystal 单晶 Sink 沉Skin effect 趋肤效应 Snap time 急变时间Sneak path 潜行通路 Sulethreshold 亚阈的Solar battery/cell 太阳能电池 Solid circuit 固体电路Solid Solubility 固溶度 Sonband 子带Source 源极 Source follower 源随器Space charge 空间电荷 Specific heat(PT) 热Speed-power product 速度功耗乘积 Spherical 球面的Spin 自旋 Split 分裂Spontaneous emission 自发发射 Spreading resistance扩展电阻Sputter 溅射 Stacking fault 层错Static characteristic 静态特性 Stimulated emission 受激发射Stimulated recombination 受激复合 Storage time 存储时间Stress 应力 Straggle 偏差Sublimation 升华 Substrate 衬底Substitutional 替位式的 Superlattice 超晶格Supply 电源 Surface 表面Surge capacity 浪涌能力 Subscript 下标Switching time 开关时间 Switch 开关Tailing 扩展 Terminal 终端Tensor 张量 Tensorial 张量的Thermal activation 热激发 Thermal conductivity 热导率Thermal equilibrium 热平衡 Thermal Oxidation 热氧化Thermal resistance 热阻 Thermal sink 热沉Thermal velocity 热运动 Thermoelectricpovoer 温差电动势率Thick-film technique 厚膜技术 Thin-film hybrid IC薄膜混合集成电路Thin-Film Transistor(TFT) 薄膜晶体 Threshlod 阈值Thyistor 晶闸管 Transconductance 跨导Transfer characteristic 转移特性 Transfer electron 转移电子Transfer function 传输函数 Transient 瞬态的Transistor aging(stress) 晶体管老化 Transit time 渡越时间Transition 跃迁 Transition-metal silica 过度金属硅化物Transition probability 跃迁几率 Transition region 过渡区Transport 输运 Transverse 横向的Trap 陷阱 Trapping 俘获Trapped charge 陷阱电荷 Triangle generator 三角波发生器Triboelectricity 摩擦电 Trigger 触发Trim 调配调整 Triple diffusion 三重扩散Truth table 真值表 Tolerahce 容差Tunnel(ing) 隧道（穿） Tunnel current 隧道电流Turn over 转折 Turn - off time 关断时间Ultraviolet 紫外的 Unijunction 单结的Unipolar 单极的 Unit cell 原（元）胞Unity-gain frequency 单位增益频率 Unilateral-switch单向开关Vacancy 空位 Vacuum 真空Valence(value) band 价带 Value band edge 价带顶Valence bond 价键 Vapour phase 汽相Varactor 变容管 Varistor 变阻器Vibration 振动 Voltage 电压Wafer 晶片 Wave equation 波动方程Wave guide 波导 Wave number 波数Wave-particle duality 波粒二相性 Wear-out 烧毁Wire routing 布线 Work function 功函数Worst-case device 最坏情况器件Yield 成品率Zener breakdown 齐纳击穿Zone melting 区熔法。

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在金刚石晶体所有原子都相同，且在金刚石晶体都有在四面体角 上的四个等距相近原子所包围。
identical [aɪˈdentɪkl] adj.同一的; 相同的
Equidistant [ˌi:kwɪˈdɪstənt] adj.距离相等的，等距的
Tetrahedron [ˌtetrəˈhi:drən] n.四面体
图1－2（b）是体心立方晶体，除了8个角原子外，一个原 子在其立方中心上。在体心立方晶格中，每个原子具有8 个相近原子。 body-centered cubic（体心立方） (bcc)
崇德尚学 求实创新
Chapter 1 Semiconductors Physics
Crystal Structure
多数具有Ⅲ-Ⅴ族原子 化合物半导体具有闪锌矿结构，它有金刚石相 同结构除了一个fcc子晶格结构有一个Ⅲ 族原子Ga和 Ⅴ族原子 As。
zincblende [zɪnkb'lend] 闪锌矿 Identical [aɪˈdentɪkl] adj.同一的;完全同样的
崇德尚学 求实创新
Chapter 1 Semiconductors Physics
have a diamond lattice structure（金刚石晶体结构）.
This structure also belongs to the cubic-crystal family
and can be seen as two interpenetrating（渗透） fcc
sublattices(亚点阵） with one sublattice displaced（移
A large number of elements exhibit the fcc lattice form,
including aluminum, copper, gold, and platinum（铂）.
大量的元素是fcc晶格形式，包括铝、铜、金和铂。
Aluminum [ə'lju:minəm] n.<美>铝 Platinum [ˈplætɪnəm] n. [化学] 铂
动） from the other by one quarter of the distance along
a diagonal（对角线） of the cube (i.e.,a displacement
（位移） of
a ).
3 the square root of three
the square root of three divided by four
Chapter 1 Semiconductors Physics
Crystal Structure
Figure 1-2(c)shows a face-centered cubic (fcc) （面心立 方）crystal that has one atom at each of the six cubic faces in addition to（还有） the eight corner atoms. In an fcc lattice, each atom has 12 nearest neighboring atoms.
崇德尚学 求实创新
Chapter 1 Semiconductors Physics
Crystal Structure
In a crystal, an atom never stray（偏离） far from a single, fixed position. The thermal vibrations associated with the atom are centered about this position. For a given semiconductor, there is a unit cell（晶胞） that is representative of the entire lattice; by repeating the unit cell throughout the crystal, one can generate the entire lattice.
崇德尚学 求实创新
Chapter 1 Semiconductors Physics
复式晶格
崇德尚学 求实创新
Chapter 1 Semiconductors Physics
Crystal Structure
The element semiconductors, silicon and germanium,
因此，不同面的晶体特性也不同，且电和其它器件特性依赖于晶体 取向。一种常用定义在晶体中不同晶面的方法是用密勒指数。
Miller indices（密勒指数）
崇德尚学 求实创新
Chapter 1 Semiconductors Physics
崇德尚学 求实创新
Chapter 1 Semiconductors Physics
Crystal Structure
Most of the Ⅲ-Ⅴ compound semiconductors (e.g.,GaAs) have a zincblende（闪锌矿） lattice, which is identical（相同） to a diamond lattice except that one fcc sublattice has column Ⅲ atoms (Ga) and the other has Column Ⅴatoms (As).
Crystals exhibiting bcc lad tungsten（钠）.
呈bcc晶格的晶体包括钨和钠晶体。
Sodium [ˈsəʊdiəm] n.<化> 钠 Tungsten [ˈtʌŋstən] n.钨
崇德尚学 求实创新
崇德尚学 求实创新
Chapter 1 Semiconductors Physics
Crystal Structure
Interpenetrating [ɪntɜ:'penɪtreɪtɪŋ] v.渗透，互相贯通 Sublattice ['sʌblætɪs] n.子格点阵 Diagonal [daɪˈægənl] n.斜线;对角线;斜列; adj.对角线的; Displacement [dɪsˈpleɪsmənt] n.位移
All atoms are identical in a diamond lattice, and each atom in the diamond lattice is surrounded by four equidistant（等距） nearest neighbors that lie at the corners of a tetrahedron（四面体）.
The semiconductor materials we will study are single crystals, that is, the atoms are arranged in a three-dimensional periodic fashion. The periodic arrangement（排布） of atoms in a crystal is called a lattice（晶格）.
图1－2（c）给出了面心立方晶体除了8个角原子外六个立方面上 还有一个原子。在fcc晶格中每个原子有12 相邻原子。
face-centered cubic (fcc) 面心立方 in addition to 还有
崇德尚学 求实创新
Chapter 1 Semiconductors Physics
Crystal Structure
Polonium [pəˈləʊniəm] n.<化>钋
Equidistant [ˌi:kwɪˈdɪstənt] 等距
崇德尚学 求实创新
Chapter 1 Semiconductors Physics
Crystal Structure
Figure 1-2(b) is a body-centered cubic（体心立方） (bcc) crystal, where in addition to the eight corner atoms, an atom is located at center of the cube. In a bcc lattice, each atom has eight nearest-neighboring atoms.
English in Electronic Science and Technology
电子科学与技术专业英语 微电子技术分册
Crystal Structure 李梦超 物理电子信息学院
崇德尚学 求实创新
Chapter 1 Semiconductors Physics
本章重点：晶体结构 固体物理相关词汇
崇德尚学 求实创新
Chapter 1 Semiconductors Physics
Diamond lattice structure
两个面心立方点阵，沿着 对角线偏移 晶格常 数
B
A 崇德尚学 求实创新
Chapter 1 Semiconductors Physics
Crystal Structure
Figure 1-2 shows some basic cubic-crystal unit cells. Figure 1-2(a) shows a simple cubic（立方） crystal; each corner of the cubic lattice is occupied by an atom that has six equidistant（等距） nearest neighboring atoms. The dimension a is called the lattice constant. Only polonium（钋） is crystallized in the simple cubic lattice.
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