大电流场效应管IRF9640
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VDS > ID(ON) x rDS(ON)MAX, VGS = -10V
VGS = ±20V
ID = -6A, VGS = -10V (Figures 8, 9)
VDS > ID(ON) x rDS(ON)MAX, ID = -6A (Figure 12)
VDD = 0.5 x Rated BVDSS, ID ≈ -11A, RG = 9.1Ω VGS = -10V (Figures 17, 18) RL = 8.4Ω for VDSS = -100V RL = 6.1Ω for VDSS = -75V MOSFET Switching Times are Essentially Independent of Operating Temperature
... ...
... ...
..... .....
ID ID
Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
- TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”
Symbol
D
G
S
JEDEC TO-263AB
GATE SOURCE
DRAIN (FLANGE)
4-33
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
Internal Source Inductance
Qg(TOT) Qgs Qgd CISS COSS CRSS LD
LS
VGS = -10V, ID = -11A, VDS = 0.8 x Rated BVDSS Ig(REF) = -1.5mA (Figures 14, 19, 20) Gate Charge is Essentially Independent of Operating Temperature
VDS = -25V, VGS = 0V, f = 1MHz (Figure 11)
Measured From the Contact Screw on Tab To Center of Die
Measured From the Drain Lead, 6mm (0.25in) from Package to Center of Die
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE DRAIN GATE
Features
• 11A, 200V • rDS(ON) = 0.500Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature
Data Sheet
IRF9640, RF1S9640SM
July 1999 File Number 2284.2
11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs
These are P-Channel enhancement mode silicon-gate power field-effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and as drivers for other high-power switching devices. The high input impedance allows these types to be operated directly from integrated circuits.
BVDSS VGS(TH)
IDSS
ID(ON) IGSS rDS(ON) gfs td(ON)
tr td(OFF)
tf
ID = -250µA, VGS = 0V (Figure 10)
VGS = VDS, ID = -250µA
VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC
NOTE: 1. TJ = 25oC to 125oC
Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current
Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain “Miller” Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Drain Inductance
Formerly developmental type TA17522.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF9640
TO-220AB
IRF9640
RF1S9640SM
TO-263AB
RF1S9640
NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., RF1S9640SM9A.
IRF9640, RF1S9640SM -200 -200 -11 -7 -44 ±20 125 1 790
-55 to 150
300 260
UNITS V V A A A V W
W/oC mJ oC
oC oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
or 407-727-9207 | Copyright © Intersil Corporation 1999
IRF9640, RF1S9640SM
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Continuous Drain Current . . TC = 100oC . . . . . . . . . . .
... ...
........... ...........
... ...
........... ...........
... ...
........... ...........
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 3, 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering
Measured From the Source Lead, 6mm (0.25in) from Header to Source Bonding Pad
On-State Drain Current (Note 2) Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
VGS = ±20V
ID = -6A, VGS = -10V (Figures 8, 9)
VDS > ID(ON) x rDS(ON)MAX, ID = -6A (Figure 12)
VDD = 0.5 x Rated BVDSS, ID ≈ -11A, RG = 9.1Ω VGS = -10V (Figures 17, 18) RL = 8.4Ω for VDSS = -100V RL = 6.1Ω for VDSS = -75V MOSFET Switching Times are Essentially Independent of Operating Temperature
... ...
... ...
..... .....
ID ID
Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
- TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”
Symbol
D
G
S
JEDEC TO-263AB
GATE SOURCE
DRAIN (FLANGE)
4-33
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
Internal Source Inductance
Qg(TOT) Qgs Qgd CISS COSS CRSS LD
LS
VGS = -10V, ID = -11A, VDS = 0.8 x Rated BVDSS Ig(REF) = -1.5mA (Figures 14, 19, 20) Gate Charge is Essentially Independent of Operating Temperature
VDS = -25V, VGS = 0V, f = 1MHz (Figure 11)
Measured From the Contact Screw on Tab To Center of Die
Measured From the Drain Lead, 6mm (0.25in) from Package to Center of Die
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE DRAIN GATE
Features
• 11A, 200V • rDS(ON) = 0.500Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature
Data Sheet
IRF9640, RF1S9640SM
July 1999 File Number 2284.2
11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs
These are P-Channel enhancement mode silicon-gate power field-effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and as drivers for other high-power switching devices. The high input impedance allows these types to be operated directly from integrated circuits.
BVDSS VGS(TH)
IDSS
ID(ON) IGSS rDS(ON) gfs td(ON)
tr td(OFF)
tf
ID = -250µA, VGS = 0V (Figure 10)
VGS = VDS, ID = -250µA
VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC
NOTE: 1. TJ = 25oC to 125oC
Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current
Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain “Miller” Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Drain Inductance
Formerly developmental type TA17522.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF9640
TO-220AB
IRF9640
RF1S9640SM
TO-263AB
RF1S9640
NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., RF1S9640SM9A.
IRF9640, RF1S9640SM -200 -200 -11 -7 -44 ±20 125 1 790
-55 to 150
300 260
UNITS V V A A A V W
W/oC mJ oC
oC oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
or 407-727-9207 | Copyright © Intersil Corporation 1999
IRF9640, RF1S9640SM
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Continuous Drain Current . . TC = 100oC . . . . . . . . . . .
... ...
........... ...........
... ...
........... ...........
... ...
........... ...........
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 3, 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering
Measured From the Source Lead, 6mm (0.25in) from Header to Source Bonding Pad
On-State Drain Current (Note 2) Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD