BT169B-D-G-1可控硅

IL
latching current
IH
holding current
VT
on-state voltage
VGT
gate trigger voltage
ID, IR
off-state leakage current
Dynamic characteristics
dVD/dt
critical rate of rise of off-state voltage
mounted; lead length = 4 mm
BT169 series
Thyristors logic level
Min
Typ
Max Unit
-
-
60
K/W
-
150
-
K/W
102 Zth(j-lead)
(K/W)
10
001aab451
1
10−1
10−2 10−5
10−4
10−3
10−2
10−1
VD = 12 V VD = VDRM(max); Tj = 125 °C VD = VDRM(max); VR = VRRM(max); Tj = 125 °C; RGK = 1 kΩ
VDM = 67 % VDRM(max); Tj = 125 °C; exponential waveform; see Figure 12
1.2 Features
s Designed to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.
1.3 Applications
ITM = 2 A; IG = 10 mA; dIG/dt = 100 mA/µs
over any 20 ms period
Min
[1] [1] [1] -
-
-
-
−40 -
Max
Unit
200
V
400
V
600
V
0.5
A
0.8
A
8 9 0.32 50
1 5 5 2 0.1 +150 125
A A A2s A/µs
tgt
gate controlled
turn-on time
tq
circuit commuted
turn-off time
Conditions
VD = 12 V; IT = 10 mA; gate open circuit; see Figure 8
VD = 12 V; IGT = 0.5 mA; RGK = 1 kΩ; see Figure 10 VD = 12 V; IGT = 0.5 mA; RGK = 1 kΩ; see Figure 11 IT = 1.2 A IT = 10 mA; gate open circuit; see Figure 7
103 ITSM (A)
102
10
BT169 series
Thyristors logic level
001aab497
IT
ITSM
tp
t
Tj initial = 25 °C max
1 10−5
10−4
10−3
tp (s)
10−2
tp ≤ 10ห้องสมุดไป่ตู้ms.
Fig 3. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values.
9397 750 13512
Product data sheet
Rev. 04 — 23 August 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
3 of 12
Philips Semiconductors
0
−50
0
50
100
150
Tlead (°C)
(1) Tlead = 83 °C.
Fig 5. RMS on-state current as a function of lead temperature; maximum values.
9397 750 13512
Product data sheet
Symbol
sym037
321
SOT54 (TO-92)
Philips Semiconductors
BT169 series
Thyristors logic level
3. Ordering information
Table 2: Ordering information
Type number
Package
A V V W W °C °C
[1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
Symbol
Parameter
Conditions
VDRM, VRRM
repetitive peak off-state voltages BT169B
BT169D
BT169G
IT(AV)
average on-state current
half sine wave; Tlead ≤ 83 °C; see Figure 1
BT169 series
Thyristors logic level
Rev. 04 — 23 August 2004
Product data sheet
1. Product profile
1.1 General description
Passivated, sensitive gate thyristors in a SOT54 plastic package.
IT(RMS)
RMS on-state current
all conduction angles; see Figure 4 and 5
ITSM
non-repetitive peak on-state current half sine wave;
Tj = 25 °C prior to
surge;
see Figure 2 and 3
s General purpose switching and phase control applications.
1.4 Quick reference data
s VDRM, VRRM ≤ 200 V (BT169B) s VDRM, VRRM ≤ 400 V (BT169D) s VDRM, VRRM ≤ 600 V (BT169G)
9397 750 13512
Product data sheet
Rev. 04 — 23 August 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
2 of 12
Philips Semiconductors
10 ITSM (A)
8
6
001aab499
IT
ITSM
tp
t
Tj initial = 25 °C max
4
2
0
1
10
102
103
n
f = 50 Hz.
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values.
Fig 6. Transient thermal impedance as a function of pulse width.
P
tp δ=
T
tp
t
T
1
10
tp (s)
9397 750 13512
Product data sheet
Rev. 04 — 23 August 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Rth(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance from junction to lead
thermal resistance from junction to printed-circuit board
ambient
RGK = 1 kΩ gate open circuit
ITM = 2 A; VD = VDRM(max); IG = 10 mA; dIG/dt = 0.1 A/µs VD = 67 % VDRM(max); Tj = 125 °C; ITM = 1.6 A; VR = 35 V; dITM/dt = 30 A/µs; dVD/dt = 2 V/µs; RGK = 1 kΩ
2 IT(RMS)
(A) 1.5
1
001aab449
1 IT(RMS)
(A) 0.8
0.6
0.4
001aab450 (1)
0.5 0.2
0 10−2
10−1
1
10
surge duration (s)
f = 50 Hz; Tlead ≤ 83 °C.
Fig 4. RMS on-state current as a function of surge duration for sinusoidal currents.
s IT(RMS) ≤ 0.8 A s IT(AV) ≤ 0.5 A s ITSM ≤ 8 A.
2. Pinning information
Table 1: Pin 1 2 3
Discrete pinning Description anode (a) gate (g) cathode (k)
Simplified outline
t = 10 ms
t = 8.3 ms
I2t
I2t for fusing
t = 10 ms
dIT/dt
IGM VGM VRGM PGM PG(AV) Tstg Tj
repetitive rate of rise of on-state current after triggering peak gate current peak gate voltage peak reverse gate voltage peak gate power average gate power storage temperature junction temperature
BT169 series
Thyristors logic level
0.8
Ptot (W)
0.6
1.9 2.2
a= 1.57
001aab446 77
Tc(max) (°C)
89
0.4
0.2
0 0
2.8 4
0.1
0.2
0.3
conduction form angle factor
(degrees) a
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Philips Semiconductors
6. Characteristics
Table 5: Characteristics Tj = 25 °C unless otherwise stated.
Symbol Parameter
Static characteristics
IGT
gate trigger current
Name
Description
BT169B
-
plastic single-ended leaded (through hole) package; 3 leads
BT169D
BT169G
4. Limiting values
Version SOT54
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Rev. 04 — 23 August 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
4 of 12
Philips Semiconductors
5. Thermal characteristics
Table 4: Symbol Rth(j-lead)
30
4
60
2.8
90
2.2
120
1.9
180
1.57
0.4
0.5
α IT(AV) (A)
101
113
125 0.6
a = form factor = IT(RMS)/IT(AV). Fig 1. Total power dissipation as a function of average on-state current; maximum values.