原子层沉积法的原理和应用
合集下载
相关主题
- 1、下载文档前请自行甄别文档内容的完整性，平台不提供额外的编辑、内容补充、找答案等附加服务。
- 2、"仅部分预览"的文档,不可在线预览部分如存在完整性等问题,可反馈申请退款(可完整预览的文档不适用该条件!)。
- 3、如文档侵犯您的权益，请联系客服反馈,我们会尽快为您处理(人工客服工作时间：9:00-18:30)。
Synthetic Chemistry of Materials
Atomic Layer Deposition (ALD)
杨 超、包 峰、方 聪、蒋博瀚、马 红石 李勇辉、王 谦、徐 晨、于 浩、 赵灿灿
—Shanghai Institute of Ceramics
Outline
Outline
1.Introduction to ALD 2.Classical models: ALD of Al2O3 3.ALD and CVD 4.Applications of ALD
5 High repeatability and expansibility 6 Substrate（Large and high aspect ratio）
3. Comparison of ALD and CVD
Schematic pressure profile during the ALD and CVD process
1 2
2 Coating on multi-pore structures
M. Knaut, et al. Microelectron Eng, 107, 80-83 (2013)
4.2 Coatings on nanoparticles
PS spheres self assembled ALD of TiCl4 and H2O Ion milling Etching PS hemispheres Annealing
Synchronous introduction of
precursors
Better step coverage
Existing shadowing effects
4.1 Coatings on high aspect ratio structures
1 Coating on step-like sructures
The surface chemistry during Al2O3 ALD
(a) AlOH* + Al(CH3)3 AlOAl(CH3)2*+CH4 (b) AlCH3* + H2O AlOH*+CH4
The overall reaction for Al2O3 ALD
2Al(CH3)3+ 3H2O Al2O3+3CH4 ∆H=376 kcal
Assisting an ALD process by means of a plasma step:
a. Radical-enhanced ALD b. Direct plasma ALD c. Remote plasma ALD
d. Direct plasma reactor with mesh
Kai Zhou, et al., Nanoscale Res Lett, 5:1555-1560(2010) Xin Wang, et al., ACS Appl. Mater. Interfaces,3: 4180-4184 (2011)
4.4 Merits of Plasma-Assisted ALD
Seung-Mo Lee et al., ChemPhysChem, 12, 791-798(2011)
3. Comparison of ALD and CVD
Atomic level control
I can’t
Sequential introduction of
precursors
ALD CVD
❖Merits
Improved material properties
film density, impurity content, electronic properties
Deposition at reduced substrate temperatures Increased choice of precursors and materials Good control of stoichiometry and composition
1. Introduction to ALD
Atomic layer deposition （ALD） — atomic level control of film deposition
1 Atomic level control
2 Self-limiting
Characters
3 Conformal deposition 4 Pinhole-free films
(1)Coatings on high aspect ratio structures (2)Coatings on Nanoparticles (3)Combination of CNT (4)Plasma ALD 5. Expectations and challenge in ALD
2. Classical models: ALD of Al2O3
operating pressure, power, exposure time, biasing voltage
Increased growth rate
N. Leick, J. Vac. Sci. Technol. A 29, 021016 (2011)
4.4 Plasma-Assisted ALD Configurations
4.3 Combination of CNT and super-black coatings
Schematic illustration of the ALD and CVD process for the synthesis of CNT arrays
Schematic representation of Al2O3 ALD coating on monodispersed NPs.
Xu Dong Wang et al., Nano letters Vol.4,No.11 (2004)
4.2 Coatings on nanoparticles
ALD Cycles → Bowl Thickness
PS Spheres → Bowl Size
4.3 Combination of CNT源自文库and super-black coatings
Atomic Layer Deposition (ALD)
杨 超、包 峰、方 聪、蒋博瀚、马 红石 李勇辉、王 谦、徐 晨、于 浩、 赵灿灿
—Shanghai Institute of Ceramics
Outline
Outline
1.Introduction to ALD 2.Classical models: ALD of Al2O3 3.ALD and CVD 4.Applications of ALD
5 High repeatability and expansibility 6 Substrate（Large and high aspect ratio）
3. Comparison of ALD and CVD
Schematic pressure profile during the ALD and CVD process
1 2
2 Coating on multi-pore structures
M. Knaut, et al. Microelectron Eng, 107, 80-83 (2013)
4.2 Coatings on nanoparticles
PS spheres self assembled ALD of TiCl4 and H2O Ion milling Etching PS hemispheres Annealing
Synchronous introduction of
precursors
Better step coverage
Existing shadowing effects
4.1 Coatings on high aspect ratio structures
1 Coating on step-like sructures
The surface chemistry during Al2O3 ALD
(a) AlOH* + Al(CH3)3 AlOAl(CH3)2*+CH4 (b) AlCH3* + H2O AlOH*+CH4
The overall reaction for Al2O3 ALD
2Al(CH3)3+ 3H2O Al2O3+3CH4 ∆H=376 kcal
Assisting an ALD process by means of a plasma step:
a. Radical-enhanced ALD b. Direct plasma ALD c. Remote plasma ALD
d. Direct plasma reactor with mesh
Kai Zhou, et al., Nanoscale Res Lett, 5:1555-1560(2010) Xin Wang, et al., ACS Appl. Mater. Interfaces,3: 4180-4184 (2011)
4.4 Merits of Plasma-Assisted ALD
Seung-Mo Lee et al., ChemPhysChem, 12, 791-798(2011)
3. Comparison of ALD and CVD
Atomic level control
I can’t
Sequential introduction of
precursors
ALD CVD
❖Merits
Improved material properties
film density, impurity content, electronic properties
Deposition at reduced substrate temperatures Increased choice of precursors and materials Good control of stoichiometry and composition
1. Introduction to ALD
Atomic layer deposition （ALD） — atomic level control of film deposition
1 Atomic level control
2 Self-limiting
Characters
3 Conformal deposition 4 Pinhole-free films
(1)Coatings on high aspect ratio structures (2)Coatings on Nanoparticles (3)Combination of CNT (4)Plasma ALD 5. Expectations and challenge in ALD
2. Classical models: ALD of Al2O3
operating pressure, power, exposure time, biasing voltage
Increased growth rate
N. Leick, J. Vac. Sci. Technol. A 29, 021016 (2011)
4.4 Plasma-Assisted ALD Configurations
4.3 Combination of CNT and super-black coatings
Schematic illustration of the ALD and CVD process for the synthesis of CNT arrays
Schematic representation of Al2O3 ALD coating on monodispersed NPs.
Xu Dong Wang et al., Nano letters Vol.4,No.11 (2004)
4.2 Coatings on nanoparticles
ALD Cycles → Bowl Thickness
PS Spheres → Bowl Size
4.3 Combination of CNT源自文库and super-black coatings