意法半导体IGBT说明书

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September 2004

STGF7NB60SL

N-CHANNEL 7A - 600V - TO-220FP

PowerMESH™ IGBT

Table 1: General Features

s POLYSILICON GATE VOLTAGE DRIVEN

s LOW THRESHOLD VOLTAGE s LOW ON-VOLTAGE DROP s LOW GATE CHARGE

s

HIGH CURRENT CAPABILITY

DESCRIPTION

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Pow-erMESH ™ IGBTs, with outstanding performances.The suffix “S” identifies a family optimized achieve minimum on-voltage drop for low frequency appli-cations (<1kHz).APPLICATIONS s LIGHT DIMMER s STATIC RELAYS

Table 2: Order Codes

TYPE V CES V CE(sat) (Max) @25°C I C

@100°C

STGF7NB60SL

600 V

< 1.6 V

7 A

SALES TYPE MARKING PACKAGE PACKAGING

STGF7NB60SL

GF7NB60SL

TO-220FP

TUBE

Rev.3

STGF7NB60SL

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Table 3: Absolute Maximum ratings

(1)Pulse width limited by max. junction temperature.

Table 4: Thermal Data

ELECTRICAL CHARACTERISTICS (T CASE =25°C UNLESS OTHERWISE SPECIFIED)Table 5: Off

Table 6: On

Symbol Parameter

Value Symbol V CES Collector-Emitter Voltage (V GS = 0)600V V ECR Reverse Battery Protection 20V V GE Gate-Emitter Voltage

± 20V I C Collector Current (continuous) at 25°C 15A I C Collector Current (continuous) at 100°C 7A I CM (1)Collector Current (pulsed)20A P TOT Total Dissipation at T C = 25°C 25W Derating Factor

0.2W/°C V ISO Insulation Withstand Voltage A.C.2500V T stg Storage Temperature

– 55 to 150

°C

T j

Operating Junction Temperature

Rthj-case Thermal Resistance Junction-case Max 5°C/W Rthj-amb

Thermal Resistance Junction-ambient Max

62.5

°C/W

Symbol Parameter

Test Conditions

Min.Typ.

Max.

Unit V BR(CES)Collectro-Emitter Breakdown Voltage

I C = 250 µA, V GE = 0600V V BR(ECS)Emitter-Collector Breakdown Voltage

I C = 1mA, V GE = 020

V

I CES

Collector-Emitter Leakage Current (V CE = 0)V GE = Max Rating Tc=25°C Tc=125°C

10100µA µA I GES

Gate-Emitter Leakage Current (V CE = 0)

V GE = ± 20 V , V CE = 0

±100

nA

Symbol Parameter

Test Conditions Min.Typ.

Max.Unit V GE(th)Gate Threshold Voltage V CE = V GE , I C = 250 µA 1.2

2.4V V CE(SAT)

Collector-Emitter Saturation Voltage

V GE =4.5 V, I C = 7A, Tj= 25°C V GE =4.5 V, I C = 7A, Tj= 125°C

1.21.1 1.6

V V

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STGF7NB60SL

ELECTRICAL CHARACTERISTICS (CONTINUED)Table 7: Dynamic

Table 8: Switching On

Table 9: Switching Off

(**)Turn-off losses include also the tail of the collector current.

Symbol Parameter

Test Conditions

Min.

Typ.Max.

Unit g fs Forward Transconductance V CE = 15 V , I C = 7 A

5S C ies C oes C res Input Capacitance Output Capacitance Reverse Transfer Capacitance

V CE = 25V, f = 1 MHz, V GE = 0

8006010pF pF pF Q g Q ge Q gc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge V CE = 480V, I C = 7 A,V GE = 5V

(see Figure 20)

162.58.5

22nC nC nC I CL Turn-Off SOA Minimum Current

V clamp = 480 V , Tj = 125°C R G = 1 K Ω, V GE =5V

20

A tscw

Short Circuit Withstand Time

V ce = 0.5 V BR(CES), V GE =5V , Tj = 125°C , R G = 1K Ω

14

µs

Symbol Parameter

Test Conditions

Min.

Typ.Max.

Unit t d(on)t r Turn-on Delay Time Current Rise Time V CC = 480 V, I C = 7 A R G =1K Ω , V GE = 5 V

(see Figure 18)

1.10.25µs µs (di/dt)on E on Turn-on Current Slope Turn-on Switching Losses

V CC = 480 V, I C = 7 A R G =1K Ω V GE = 5 V,Tj = 125°C

452.7A/µs mJ Symbol Parameter

Test Conditions

Min.Typ.Max.Unit t c Cross-over Time V cc = 480 V, I C = 7 A, R GE = 1K Ω , V GE = 5 V (see Figure 18)

2.7µs t r (V off )Off Voltage Rise Time 1.6µs t d (off )Delay Time 5.2µs t f Current Fall Time 1.1µs

E off (**)Turn-off Switching Loss 4.1m J

t c Cross-over Time V cc = 480 V, I C = 7 A, R GE = 1K Ω , V GE = 5 V Tj = 125 °C (see Figure 18)

4.4µs t r (V off )Off Voltage Rise Time 2.4µs t d (off )Delay Time 6.4µs t f Fall Time

1.7µs

E off (**)

Turn-off Switching Loss

7.1

m J