MOS电路版图设计规则解析解读
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哈工大微电子中心 来逢昌
设计规则解析
以TSMC 0.25m 硅栅N 阱CMOS工艺的部分设计规 则为例
哈工大微电子中心 来逢昌
一、几点说明
2. Terminology Definitions Region 1. 3. MASK Terminology NAMES Definitions (Layer) for for Rule
PW
NW
哈工大微电子中心 来逢昌
三、Thin Oxide Rule (active area)
OD.C.5 OD.C.3 Minimum Minimum clearance clearance from from poly NW edge to to the a P+ HA 0.32 0.6 m m OD.W.3 At least one segment J of the edge consecutive JF 0.5 m OD.W.1 Minimum width of an OD region to define 0.3 OD.S.1 between regions 0.4m OD.C.1 Minimum Minimum space clearance from two NW OD edge to a DC0.15 edge OD region of butted which diffusion inside OD a region NW N+/P+ butted edges of butted diffusion OD the width of NMOS/PMOS ( both regions areis either inside or outside N+ OD region which is inside the to NW OD.C.4 Minimum clearance from NW edge a P+ I G0 0.15 m OD.S.2 Minimum space of N+ OD to P+ OD for m a N-well) which can be either N+ to N+, OD.W.2 Minimum width of an OD region for B 0.3 m is 0.5 um OD.C.2 Minimum clearance from NW edge to a N+ E 0.6 m OD region(for PW pick up) which is outside a NW P+ to P+ or N+ to P+ butted diffusion interconnect (N+/or P+) OD region which is outside the NW(cold or hot)
哈工大微电子中心 来逢昌
二、N-Well Rule
NW.W.1 Minimum dimension of a NW region A 1.2 m NW.W.2 Minimum dimension of a hot NW region A1 3.0 m ( NW resistance) NW.S.1 Minimum space between tow NW regions B 2.0 m with different potential (include NW resistor) NW.S.2 Minimum space between tow NW regions C 0.6 m with the same potential Merge if space is less than 0.6 m A NW ered with PW :--Definition of NP. P-Well. WIDTH SPACE : P+ OD OD covered with NW:--Definition of PP. N-Well. Cold N-Well : N-Well connected to the most positive voltage (Vdd). OD --- Definition of thin oxide for device, and interconnection HotPO N-Well : N-Well not --- Definition ofconnected Poly-Si. to the most positive voltage CLEARANCE : HotPP N+--diffusion : allof N+ diffusion regions outside the N-Well which have Definition P+ implantation. a potential not equal to the substrate voltage. NP --- Definition of N+ implantation. HotCO P+ --diffusion : all of P+contact diffusion window regions inside the N-Well which have a Definition from M1 to OD or PO. EXTENSION :potential not equal to the N-Well potential. M1 --- Definition of 1st metal for interconnection. Cold diffusions : VIA1 -- Definition of via1 hole between M2 and M1. Outside N-Well : a diffusion which has the potential the same as the subs M2 --- Definition of 2nd metal for interconnection. OVERLAP : Inside N-Well : a diffusion which has the potential the same as the N-Well. CB --- Definition of bonding pad.
设计规则解析
以TSMC 0.25m 硅栅N 阱CMOS工艺的部分设计规 则为例
哈工大微电子中心 来逢昌
一、几点说明
2. Terminology Definitions Region 1. 3. MASK Terminology NAMES Definitions (Layer) for for Rule
PW
NW
哈工大微电子中心 来逢昌
三、Thin Oxide Rule (active area)
OD.C.5 OD.C.3 Minimum Minimum clearance clearance from from poly NW edge to to the a P+ HA 0.32 0.6 m m OD.W.3 At least one segment J of the edge consecutive JF 0.5 m OD.W.1 Minimum width of an OD region to define 0.3 OD.S.1 between regions 0.4m OD.C.1 Minimum Minimum space clearance from two NW OD edge to a DC0.15 edge OD region of butted which diffusion inside OD a region NW N+/P+ butted edges of butted diffusion OD the width of NMOS/PMOS ( both regions areis either inside or outside N+ OD region which is inside the to NW OD.C.4 Minimum clearance from NW edge a P+ I G0 0.15 m OD.S.2 Minimum space of N+ OD to P+ OD for m a N-well) which can be either N+ to N+, OD.W.2 Minimum width of an OD region for B 0.3 m is 0.5 um OD.C.2 Minimum clearance from NW edge to a N+ E 0.6 m OD region(for PW pick up) which is outside a NW P+ to P+ or N+ to P+ butted diffusion interconnect (N+/or P+) OD region which is outside the NW(cold or hot)
哈工大微电子中心 来逢昌
二、N-Well Rule
NW.W.1 Minimum dimension of a NW region A 1.2 m NW.W.2 Minimum dimension of a hot NW region A1 3.0 m ( NW resistance) NW.S.1 Minimum space between tow NW regions B 2.0 m with different potential (include NW resistor) NW.S.2 Minimum space between tow NW regions C 0.6 m with the same potential Merge if space is less than 0.6 m A NW ered with PW :--Definition of NP. P-Well. WIDTH SPACE : P+ OD OD covered with NW:--Definition of PP. N-Well. Cold N-Well : N-Well connected to the most positive voltage (Vdd). OD --- Definition of thin oxide for device, and interconnection HotPO N-Well : N-Well not --- Definition ofconnected Poly-Si. to the most positive voltage CLEARANCE : HotPP N+--diffusion : allof N+ diffusion regions outside the N-Well which have Definition P+ implantation. a potential not equal to the substrate voltage. NP --- Definition of N+ implantation. HotCO P+ --diffusion : all of P+contact diffusion window regions inside the N-Well which have a Definition from M1 to OD or PO. EXTENSION :potential not equal to the N-Well potential. M1 --- Definition of 1st metal for interconnection. Cold diffusions : VIA1 -- Definition of via1 hole between M2 and M1. Outside N-Well : a diffusion which has the potential the same as the subs M2 --- Definition of 2nd metal for interconnection. OVERLAP : Inside N-Well : a diffusion which has the potential the same as the N-Well. CB --- Definition of bonding pad.