基于CMOS工艺SPAD的单光子探测技术研究

基于CMOS工艺SPAD的

单光子探测技术研究

重庆大学硕士学位论文

(学术学位)

学生姓名：***

指导教师：孟丽娅副教授

专业：仪器科学与技术

学科门类：工学

重庆大学光电工程学院

二O一五年五月

中央高校科研基本业务费资助项目(CDJZR12120001)

Study on single-photon detector Based on CMOS Technology Single-Photon Avalanche

Diode

A Thesis Submitted to Chongqing University

In Partial Fulfillment of the Requirement for the

Master’s Degree of Engineering

By

Yan Xuliang

Supervised by Associate Prof. Meng Liya

Specialty: Instrument Science and Technology

College of Optoelectronic Engineering of Chongqing

University, Chongqing, China

May, 2015

Supported by CDJZR(No.12120001)

中文摘要

摘要

光在极其微弱时会离散成一个个的光子，称为单光子。单光子信号由于强度微弱且粒子性显著，常规技术难以对其检测，被认为是光电探测技术的极限。同时单光子信号又是一种普遍存在的信息载体，在日常生活、工业生产、科学研究以及国防军事等各方面都有着广泛应用，因而近年来受到研究人员重视。

单光子探测技术主要体现在以下几方面：有极高增益的单光子探测器件，控制单光子探测器件并对信号进行处理的快速电路，器件和电路的集成技术，大规模像元阵列的制作及拼接。目前在单光子探测方面亟待解决的问题有：单光子探测器工艺复杂、工作电压高、价格昂贵、重复性差，外围电路响应速度慢、版图面积大，对单光子探测器和相关电路的混合拼接易导致性能下降、噪声变大。

为解决上述问题，本文在中央高校基本业务费资助项目(NO.12120001)支持下，对单光子探测技术进行了研究。文章选用实验室设计的带保护环结构的CMOS工艺兼容的雪崩光电二极管作为单光子探测器件，对雪崩光电二极管的工作原理和相关参数进行了介绍。用等效电路模型代替雪崩光电二极管在软件中进行仿真，分析比较了雪崩光电二极管的三种淬灭模式，选择主动淬灭电路控制雪崩光电二极管，用高速电压比较电路作为雪崩信号甄别电路，设计了数字和模拟结构的计数电路。在此基础上完成了单光子探测像元电路，包括雪崩光电二极管等效电路、淬灭复位电路、雪崩信号甄别电路、光子计数电路等。仿真结果显示电路探测速度可达5ns，淬灭电路死时间约2.690ns，从光子信号进入到计数完成整体电路传输延时约3.0572ns，计数电路在线性模式下的计数容量为55。此外，还对时间相关单光子计数的原理和基本电路结构进行介绍，用高速电压比较电路进行光子到达定时，阐述几种时间数字转化技术，设计了基于S-R锁存器的时间放大电路和基于电流偏置比例的时间放大电路。

关键词：单光子探测，雪崩光电二极管，光子计数，时间相关单光子计数

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重庆大学硕士学位论文

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英文摘要

ABSTRACT

Optical signals will disperse into photons when it is extremely weak，be called as single-photon signal．As its weak intensity and significant particles，Single-photon is hard to detect by conventional means testing and considered to be the limit of the photoelectric detection technology．But，single-photon as a kind of widespread information carrier has been highly regard and widely applied in the daily life，industrial production，scientific research and military areas．

Single-photon detection technology is mainly manifested in the following respects：single photon detector with a very high gain，extremely fast circuits to control the single-photon detector and processing single，integration of devices and circuits ，accomplishing large-scale array．There are a series of problems to be solved in practical application．The characteristic of single-photon detector is poor in technology，working voltage，price，repeatability．Circuits work slow and take much layout．The hybird integration of devices and circuits easily lead to performance degradation and noise enhancement．

This article with support of the central colleges and universities scientific research basic business finding researched single-photon detection technology to solve the above problems．The paper put forward to use CMOS technology avalanche photodiode with protection ring as single-photon detector and introduced its working principle and characteristic parameters．The paper used the equivalent circuit model instead of avalanche photodiode in the circuit simulation，compared three kinds of quenching model and selected active quenching circuit controlling avalanche photodiode，designed high speed voltage comparsion circuit screening avalanche signal，planned two counting circuit．As an important work，we constructed an complete pixel circuit，including the equivalent circuit of avalanche photodiode，the quenching and resetting circuit, avalanche signal discrimination circuit，photon counting circuit，etc．The simulation results show that the minimum detection time is 5ns，dead time of quenching circuit is approximately 2.690 ns，the time from photon into detector to accomplish counting last 3.0572 ns，counting in linear mode range from 0 to55．In addition，paper introduced the principle and circuit structure of time correlated single photon counting，applied voltage comparator defining time of photon arriving，stated several typical kinds of time to digital converter，designed two types time amplifier circuit based on S-R lanch and

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