氮化铝粉末的生产工艺
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1、氮化铝粉末的生产工艺（国外专题数据库）
（1）、Rare earth-activated aluminum nitride powders and method of making
Inventors
BING HAN
US
Applicants
OSRAM SYLVANIA INC
US
Priority
US 763689 P 31-Jan-2006
Classifications
International (2006.01):C04B 35/00
European: C04B 35/581; C01B 21/072; C09K 11/08J;
Abstract
Rare earth-activated aluminum nitride powders are made using a solution-based approach to form a mixed hydroxide of aluminum and a rare earth metal, the mixed hydroxide is then converted into an ammonium metal fluoride, preferably a rare earth-substituted ammonium aluminum hexafluoride ((NH4)3Al1-xRExF6), and finally the rare earth-activated aluminum nitride is formed by ammonolysis of the ammonium metal fluoride at a high temperature. The use of a fluoride precursor in this process avoids sources of oxygen during the final ammonolysis step which is a major source of defects in the powder synthesis of nitrides. Also, because the aluminum nitride is formed from a mixed hydroxide co-precipitate, the distribution of the dopants in the powder is substantially homogeneous in each particle.
（2）、ALUMINUM NITRIDE SINTERED BODY AND METHOD OF PRODUCING THE SAME
摘要An aluminum nitride sintered body comprising aluminum nitride crystals belonging to a Wurtzite hexagonal crystal system wherein the 3 axes a, b and c of the unit lattice of the crystal are defined such that the ratio b/a of the lengths of the axes b and a is 1.000 near the center of the crystal grain and lies within the range 0.997-1.003 in the vicinity of the grain boundary phase. Aluminum nitride sintered body is produced by sintering a molded body of a raw material powder having aluminum and nitrogen as its principal components at a temperature of 1700.degree.-1900.degree. C. in a non-oxidizing atmosphere having a partial pressure of carbon monoxide or carbon of not more than 200 ppm and then cooling the sintered body to 1500.degree. C. or a lower temperature at a rate of 5.degree. C./min or less. The aluminum nitride sintered body has a greatly improved thermal conductivity and, therefore, is suitable for heat slingers, substrates or the like for semiconductor devices.
权利要求1. An aluminum nitride sintered body comprising aluminum nitride crystals belonging to a Wurtzite hexagonal crystal system wherein three axes a, b, and c of a unit lattice of the crystal are defined whereby a ratio b/a of the lengths of axes b and a is 1.000 near a center of the crystal grain, and lies within a range of 0.997 to 1.003 in a vicinity of a grain boundary phase, said sintered body containing at least one compound selected from the group consisting of Ti, V, and Co.