IZOTFT氧化物薄膜晶体管
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* data from samples of relevant on/off current ratio
Vth(V) -30.21 -2.77 -1.26 -1.53
dielectric layer thickness
PMMA TFT mobiliy thickness (cm2 V-1 s −1 ) (nm) 150 1.75 360 1.99 520 1.71 580 1.11 Vth (V) -24.97 -2.77 -35.71 -39.91 on/off ratio 2.8E+03 2.6E+04 7.0E+02 1.1E+02
Experimental Results Optical Properties
IZO channel Tavg=80.4 % (400 ~ 700 nm) PMMA/IZO Tavg=86.5 % (400 ~ 700 nm) potential application in the fabrication of transparent devices
oxygen partial pressure of 5.0×102 Pa, sputtering time of 8 min, PMMA layer thickness of 360 nm
Experimental Results
oxygen partial pressure
- during the preparation of IZO channel layer (dc sputtering)
Thin film transistors(TFTs) are widely used in the field of display and memory. - traditional representatives a-Si TFT
low mobility, light sensitive, opaque
PMMA dielectric/IZO channel
hybrid structure – inorganic channel/organic dielectric to combine both advantages • transparent channel deposited at RT with high mobility • dielectric layer prepared by solution processing with potential application of roll to roll production
*sputtering time(4 ~ 16 min), current(100 mA), voltage(330~350V) thickness of dielectric layer(150 ~ 580 nm)
Experimental Results
channel thickness
sputtering IZO thickness TFT mobiliy time(min) (nm) (cm2V-1 s −1 ) 4 30 1.74 8 60 1.99 12 90 2.16 16 120 0.66
μsat = 7.67 cm2V-1s−1 Vth= -14.59 V on/off ratio > 2.4×102
Experimental Results Electrical properties
Output curves of IZO-TFT
Experimental parameters
oxygen 5.0×102 Pa sputtering time 12min dielectric layer thickness ~300nm
(b)
Experimental Results Electrical properties
μsat = 2.0 cm2V-1s−1, on/off current ratio > 2.6×104, Vth = -2.77 V
Conclusion
IZO-based TFTs with PMMA dielectric layers were fabricated. The processing temperature all along is below 90 ℃. PMMA dielectric layer on channel layer is smooth with an average transmittance of over 85 % in the visible region. The IZO-based TFT exhibits a saturation mobility of over 7 cm2V-1s-1. The optimum on/off current ratio is over 104. Oxygen partial pressure, channel thickness and dielectric layer thickness have effects on electrical properties of TFTs.
complex and high-temperature process
p-Si TFT
Oxide thin film transistor
• TFTs with metal(In, Zn, Sn, Ga) oxide channels • high mobility (vs. a-Si TFT) & high transparency • In-Ga-Zn-O TFT prepared at room temperature reported
Experimental Results Electrical properties
CV tests of PMMA
film thickness 330 nm test area 2.85 cm2
dielectric constant 3.49 (1kHz) 3.29 (10kHz) 2.09 (100kHz)
IZO-based thin film transistors with PMMA dielectric layers
Outline
1 2
Introduction Structure and preparation Results and discussion Conclusion
3
4
Introduction Oxide thin film transistor
- high processing temperature or expensive material/equipment
Poly(methyl methacrylate) (PMMA)
- high resistance, proper dielectric constant, outstanding chemico-physical properties, mechanical flexibility, light weight, simple solution processing
Experimental Results
Electrical properties
IZO-TFT transfer curves
I DS
CiW (VGS Vth ) 2 2L
(a)
Fig. (a) ID-VG transfer and (b) ID-VD output curves of the IZO-TFT with L = 100 μm and W = 500 μm
Preparation Structure
Al Gate PMMA
Al S/D
IZO
Glass substrate
Preparation Structure top view
Al Gate PMMA
Source Gate Insulator
Al S/D
Channel
Drain
IZO
Glass substrate
transparent, flexible
• TFTs with indium zinc oxide(IZFra Baidu bibliotek) channels –to be investigated
Introduction
dielectric layer
affect mobility, Vth, on/off current ratio of TFTs inorganic dielectrics e.g. SiO2, SiNx, Y2O3 , Ta2O5
Preparation
top-gate TFT gate insulator source/drain channel substrate
thermal evaporation dip coating, cured at 80~90 ℃ thermal evaporation dc sputtering from In/Zn(Zn: 49.27 wt%) metal target
Experimental Results Morphology
PMMA on IZO layer IZO channel on glass thickness 300 nm 95 nm Rms 0.68 nm 1.00 nm Ra 0.54 nm 0.47 nm thin film
surfaces are smooth, contributive to the reduction of leakage current
Vth(V) -30.21 -2.77 -1.26 -1.53
dielectric layer thickness
PMMA TFT mobiliy thickness (cm2 V-1 s −1 ) (nm) 150 1.75 360 1.99 520 1.71 580 1.11 Vth (V) -24.97 -2.77 -35.71 -39.91 on/off ratio 2.8E+03 2.6E+04 7.0E+02 1.1E+02
Experimental Results Optical Properties
IZO channel Tavg=80.4 % (400 ~ 700 nm) PMMA/IZO Tavg=86.5 % (400 ~ 700 nm) potential application in the fabrication of transparent devices
oxygen partial pressure of 5.0×102 Pa, sputtering time of 8 min, PMMA layer thickness of 360 nm
Experimental Results
oxygen partial pressure
- during the preparation of IZO channel layer (dc sputtering)
Thin film transistors(TFTs) are widely used in the field of display and memory. - traditional representatives a-Si TFT
low mobility, light sensitive, opaque
PMMA dielectric/IZO channel
hybrid structure – inorganic channel/organic dielectric to combine both advantages • transparent channel deposited at RT with high mobility • dielectric layer prepared by solution processing with potential application of roll to roll production
*sputtering time(4 ~ 16 min), current(100 mA), voltage(330~350V) thickness of dielectric layer(150 ~ 580 nm)
Experimental Results
channel thickness
sputtering IZO thickness TFT mobiliy time(min) (nm) (cm2V-1 s −1 ) 4 30 1.74 8 60 1.99 12 90 2.16 16 120 0.66
μsat = 7.67 cm2V-1s−1 Vth= -14.59 V on/off ratio > 2.4×102
Experimental Results Electrical properties
Output curves of IZO-TFT
Experimental parameters
oxygen 5.0×102 Pa sputtering time 12min dielectric layer thickness ~300nm
(b)
Experimental Results Electrical properties
μsat = 2.0 cm2V-1s−1, on/off current ratio > 2.6×104, Vth = -2.77 V
Conclusion
IZO-based TFTs with PMMA dielectric layers were fabricated. The processing temperature all along is below 90 ℃. PMMA dielectric layer on channel layer is smooth with an average transmittance of over 85 % in the visible region. The IZO-based TFT exhibits a saturation mobility of over 7 cm2V-1s-1. The optimum on/off current ratio is over 104. Oxygen partial pressure, channel thickness and dielectric layer thickness have effects on electrical properties of TFTs.
complex and high-temperature process
p-Si TFT
Oxide thin film transistor
• TFTs with metal(In, Zn, Sn, Ga) oxide channels • high mobility (vs. a-Si TFT) & high transparency • In-Ga-Zn-O TFT prepared at room temperature reported
Experimental Results Electrical properties
CV tests of PMMA
film thickness 330 nm test area 2.85 cm2
dielectric constant 3.49 (1kHz) 3.29 (10kHz) 2.09 (100kHz)
IZO-based thin film transistors with PMMA dielectric layers
Outline
1 2
Introduction Structure and preparation Results and discussion Conclusion
3
4
Introduction Oxide thin film transistor
- high processing temperature or expensive material/equipment
Poly(methyl methacrylate) (PMMA)
- high resistance, proper dielectric constant, outstanding chemico-physical properties, mechanical flexibility, light weight, simple solution processing
Experimental Results
Electrical properties
IZO-TFT transfer curves
I DS
CiW (VGS Vth ) 2 2L
(a)
Fig. (a) ID-VG transfer and (b) ID-VD output curves of the IZO-TFT with L = 100 μm and W = 500 μm
Preparation Structure
Al Gate PMMA
Al S/D
IZO
Glass substrate
Preparation Structure top view
Al Gate PMMA
Source Gate Insulator
Al S/D
Channel
Drain
IZO
Glass substrate
transparent, flexible
• TFTs with indium zinc oxide(IZFra Baidu bibliotek) channels –to be investigated
Introduction
dielectric layer
affect mobility, Vth, on/off current ratio of TFTs inorganic dielectrics e.g. SiO2, SiNx, Y2O3 , Ta2O5
Preparation
top-gate TFT gate insulator source/drain channel substrate
thermal evaporation dip coating, cured at 80~90 ℃ thermal evaporation dc sputtering from In/Zn(Zn: 49.27 wt%) metal target
Experimental Results Morphology
PMMA on IZO layer IZO channel on glass thickness 300 nm 95 nm Rms 0.68 nm 1.00 nm Ra 0.54 nm 0.47 nm thin film
surfaces are smooth, contributive to the reduction of leakage current