基于不同原始组织预设变形第四代单晶高温合金的再结晶行为

材料工程

Vol. 47 No. 5

May2019 pp107—114

第47卷 第5期

2019年5月 第107 — 114页

Journal of Materials Engineering

基于不同原始组织预设变形第四代单晶高温合金的再结晶行为

Recrystallization behavior of the fourth generation

singlecrystalsupera l oybasedondi 6erent

originalmicrostructurepresetstrain

史振学，刘世忠，赵金乾，王效光,李嘉荣

(中国航发北京航空材料研究院先进高温结构材料

重点实验室，北京100095)

SHI Zhen-xue , LIU Shi-zhong , ZHAO Jin-qian ,

WANG Xiao-guang , LI Jia-rong

(ScienceandTechnologyon Advanced High Temperature Structural

Materials Laboratory , AECC Beijing Institute of Aeronautical

Materials,Beijing 100095 , China)

摘要：第四代单晶高温合金标准热处理试样和铸态试样压痕后分别在1100,1150,1200,1250,1300k 和1340°C 退火处

理，采用光学显微镜、扫描电镜、电子背散射仪研究不同条件的再结晶组织。结果表明*100,1150,1200C 退火处理后,

标准热处理试样和铸态试样都出现胞状再结晶。1250C 退火处理后，标准热处理试样和铸态试样都为混合再结晶o

1300C 退火处理后，标准热处理试样再结晶组织全部为等轴再结晶，而铸态试样仍为混合再结晶。1340C 退火处理后,

标准热处理试样和铸态试样都形成了等轴再结晶。随着退火温度升高，标准热处理试样和铸态试样的再结晶层深度明

显增加，标准热处理试样再结晶深度明显大于铸态试样，相同条件下标准热处理试样的再结晶晶粒更容易长大。再结晶

与基体的界面为小角度晶界、大角度晶界，而再结晶晶粒之间为小角度晶界、大角度晶界和W 晶界。W 晶在单晶高温合

金再结晶的过程中发挥了重要作用。

关键词：单晶高温合金；原始组织；再结晶；晶界

doi ： 10. 11868/j. issn. 1001-4381. 2018 001095 中图分类号：TG132. 3 + 2；TG146. 1+5

文献标识码：A 文章编号：1001-4381(2019)05-0107-08

Abstract ：The specimens of the fourth generation single crystal superalloy after heat treatment and at

as-cast state were indented and annealed in vacuum at 1100, 1150, 1200, 1250, 1300C and 1340°C , respectively.Therecrysta l ized microstructuresofthea l oy wereexamined by optical microscopy (OM) , scanning electron microscopy (SEM) and electron back scattering diffraction (EBSD). The resultsshowthatce l ularrecrysta l ization (CRX )occursinthestandardheattreatmentsamplesand

as-cast samples after annealing treatment at 1100, 1150 C and 1200 C. Mixed recrysta l ization occurs in standard heat treatment samples and as-cast samples after annealing treatment at 1250°C. Equiaxed

recry:ta l ization (ERX )develop:whenthe:tandardheattreatment:ample:areannealedtreatmentat 1300°C , while mixed recrystallization occurs in as-cast samples at same condition. ERX develops when

these two samples are annealed at 1340°C. The recrystallized layer depth of these two samples

increases with the increase of annealing treatmenttemperature and the depth of standard heat

treatmentsamplesisobviouslylargerthanthatofas-castsamples.Therecrysta l izedgrainofstandard

heattreatmentsampleseasilygrowsupatsamecondition.Theinterfacebetweentherecrysta l ization

grain and original grain is low angle boundary and high angle boundary !while the interface between

adjacentrecrysta l izationgrainsislowangleboundary !highangleboundary !andtwinningboundary.

Itcanbeinfe r edthattheformationoftwinscanplayanimportantroleintheprocessofrecrysta l ization.

Key words ： single crystal superalloy ； original microstructure ； recrystallization ； grain boundary