P4SMAJ12C-T3中文资料

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AOD413A 40V P-Channel MOSFET 数据手册说明书

Symbol V DS V GSI DM I AR E AR SymbolTyp Max 16.7254050R θJC23Continuous Drain B,HUnits Parameter T C =25°C T C =100°CAbsolute Maximum Ratings T A =25°C unless otherwise noted V T A =70°C Power Dissipation B Avalanche CurrentC Repetitive avalanche energy L=0.1mH C ID Pulsed Drain Current CVGate-Source Voltage Drain-Source Voltage Steady-StateT A =25°C P DSM T C =25°C Maximum Junction-to-Ambient A,G Steady-State Power Dissipation AP D T C =100°C °C/WThermal CharacteristicsParameterUnits Maximum Junction-to-Ambient A,Gt ≤ 10sR θJA °C/W °C/W Maximum Junction-to-CaseFGS DGSDSymbolMin TypMaxUnits BV DSS -40V -1T J =55°C-5I GSS ±100nA V GS(th)-1.7-2-3V I D(ON)-30A3644T J =125°C52655266g FS 22S V SD -0.76-1V I S-12A C iss 9001125pF C oss 97pF C rss 68pF R g14ΩQ g (-10V)16.221nC Q g (-4.5V)7.29.4nC Q gs 3.8nC Q gd 3.5nC t D(on) 6.2ns t r 8.4ns t D(off)44.8ns t f 41.2ns t rr 21.2ns Q rr13.8nC -20COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.20Gate Source Charge Gate resistanceV GS =0V, V DS =0V, f=1MHzV GS = -10V, V DS = -20V,I D = -12ATotal Gate Charge m ΩTurn-On Rise Time Turn-Off DelayTime V GS = -10V, V DS = -20V, R L =1.6Ω,R GEN =3ΩTurn-Off Fall TimeTurn-On DelayTime Gate Drain Charge V GS =0V, V DS = -20V, f=1MHz SWITCHING PARAMETERS Total Gate Charge V GS = -4.5V, I D = -8AI S = -1A,V GS =0VV DS = -5V, I D = -12A Maximum Body-Diode Continuous CurrentInput Capacitance Output CapacitanceDYNAMIC PARAMETERS R DS(ON)Static Drain-Source On-ResistanceForward Transconductance Diode Forward VoltageElectrical Characteristics (T J =25°C unless otherwise noted)STATIC PARAMETERS ParameterConditions I DSS µA Body Diode Reverse Recovery Charge I F = -12A, dI/dt=100A/µsBody Diode Reverse Recovery TimeV GS = -10V, I D = -12AReverse Transfer Capacitance I F = -12A, dI/dt=100A/µsGate Threshold Voltage V DS =V GS I D = -250µA Drain-Source Breakdown Voltage On state drain currentI D = -250µA, V GS =0V V GS = -10V, V DS = -5V V DS = -40V, V GS =0VV DS =0V, V GS = ±20V Zero Gate Voltage Drain Current Gate-Body leakage current A: The value of R θJA is measured with the device in a still air environment with T A =25°C. The power dissipation P DSM and current rating I DSM are based on T J(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance.B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuminga maximum junction temperature of T J(MAX)=175°C. The SOA curve provides a single pulse ratin g.G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.H. The maximum current rating is limited by bond-wires.*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).Rev4: April 2011VdsChargeGate Charge Test Circuit & WaveformVddVdsIdVgsUnclamped Inductive Switching (UIS) Test Circuit & Waveforms2E = 1/2 LI AR ARBV DSSI ARVdd VddResistive Switching Test Circuit & Waveforms90%10%。

P4221-FQ120中文资料

60PPR 96PPR 150PPR 180PPR 200PPR 240PPR 250PPR 256PPR 270PPR 300PPR 360PPR 480PPR 500PPR 512PPR
120PPR 192PPR 300PPR 360PPR 400PPR 480PPR 500PPR 512PPR 540PPR 600PPR 720PPR 960PPR 1000PPR 1024PPR
240PPR 384PPR 600PPR 720PPR 800PPR 960PPR 1000PPR 1024PPR 1080PPR 1200PPR 1440PPR 1920PPR 2000PPR 2048PPR
7
Programming of Switches: \CCW=set to left; | Cntr=set center; /CW=set to right Note: for SW5 (right hand column PPR x 4) Time Settings: CW=other columns; Cntr=5-10µsec; CCW=25-35µsec
H e r c u l e s
6000 Series
4000 Series
For the latest specifications visit our website
元器件交易网
Hercules Encoders “Value Added” Programmable Encoder
6
Series 4000 and 6000 Programmable Encoders
Standard Features • 4000 Series - Space-Saving Enclosure, 1-1/2"D x 3"H x 3"W, 25 to 4096 PPR. • 6000 Series - Internal Space for 3 Separate Encoders, 25 to 4096 PPR. • Built-In Anti-Jitter Circuitry. • Operating Voltage Flexibility - 8 to 28Vdc, 5Vdc with TTL Outputs and Line Drivers, etc. • Low Supply Current Requirements - Only 50 Milliamperes per Encoder • Extra Heavy Duty 1/2"D Shafts - Optional

proteusisis7库元件中英对照表

AD芯片-----TECHWELL TW6805A仿真软件里的AD0809有问题,用0808代替定时/计数器的使用方法：CLK：计数和测频状态时，数字波的输入端。

（counter enable)CE：计数使能端；通过属性设置高还是低有效。

无效暂停计数RST:复位端（RESET),可设上升沿（Low-High)或者下降沿（High-Low）有效。

4种工作方式：通过属性Operating Mode 来选择。

Default : 缺省方式，计数器方式。

Time(secs):100S定时方式，由CE和RST控制暂停和重新开始。

Time(hms)：10小时定时方式，同上。

Frequency: 测频方式，CE和RST有效时，显示CLK端数字波频率Count:计数方式。

+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++常用元件列表：POT-HG 可调电位器7SEG-MPX8-CC-BLUE 8位数码管COMPIM 串口SW- 开关7SEG-BCD 含译码驱动的数显Speaker 扬声器2N5771和2N5772，15V对管300MARES , CAP,BUTTON 按钮开关KEYPAD-PHONE 3*4电话键盘KEYPAD-SMALLCALC 4*4计算器键盘KEYPAD-CALCULATOR 4*6计算器键盘PG160128A 128*128液晶++++++++元件库详细分类ics 模拟集成器件8个子类：amplifier 放大器comparators 比较器display drivers 显示驱动器filters 滤波器miscellaneous 混杂器件regulators 三端稳压器timers 555定时器voltage references 参考电压2，capacitors CAP电容，23个分类别animated 可显示充放电电荷电容audio grade axial 音响专用电容axial lead polypropene 径向轴引线聚丙烯电容axial lead polystyrene 径向轴引线聚苯乙烯电容ceramic disc 陶瓷圆片电容decoupling disc 解耦圆片电容high temp radial 高温径向电容high temp axial electrolytic高温径向电解电容metallised polyester film 金属聚酯膜电容metallised polypropene 金属聚丙烯电容metallised polypropene film 金属聚丙烯膜电容miniture electrolytic 微型电解电容multilayer metallised polyester film 多层金属聚酯膜电容mylar film 聚酯薄膜电容nickel barrier 镍栅电容non polarised 无极性电容polyester layer 聚酯层电容radial electrolytic 径向电解电容resin dipped 树脂蚀刻电容tantalum bead 钽珠电容variable 可变电容vx a xial electrolytic VX 轴电解电容3，CMOS 4000 series 4000系列数字电路adders 加法器buffers & drivers 缓冲和驱动器comparators 比较器counters 计数器decoders 译码器encoders 编码器flip-flops & latches 触发器和锁存器frequency dividers & tiner 分频和定时器gates & inverters 门电路和反相器memory 存储器混杂逻辑电路mutiplexers 数据选择器multivibrators 多谐振荡器phase-locked loops(PLL) 锁相环registers 寄存器signal switcher 信号开关4，connectors 接头；8个分类：audio 音频接头D-type D型接头DIL 双排插座header blocks 插头miscellaneous 各种接头PCB transfer PCB 传输接头SIL 单盘插座ribbon cable 蛇皮电缆terminal blocks 接线端子台5，data converters 数据转换器：4个分类：A/D converters 模数转换器D/A converters 数模转换器sample & hold 采样保持器temperature sensors 温度传感器6，debugging tools 调试工具数据：3个类别：breakpoint triggers 断点触发器logic probes 逻辑输出探针logic timuli 逻辑状态输入7，diodes 二极管；8个分类：bridge rectifiers 整流桥generic 普通二极管rectifiers 整流二极管schottky 肖特基二极管switching 开关二极管tunnel 隧道二极管varicap 稳压二极管8，inductors 电感：3个类别：generic 普通电感SMT inductors 表面安装技术电感transformers 变压器9,laplace primitives 拉普拉斯模型：7个类别：1st order 一阶模型2nd order 二阶模型controllers 控制器non-linear 非线性模型operators 算子poles/zeros 极点/零点symbols 符号10，memory ICs 存储器芯片：7个分类：dynamic RAM 动态数据存储器EEPROM 电可擦出程序存储器EPROM 可擦出程序存储器I2C memories I2C总线存储器memory cards 存储卡SPI Memories SPI总线存储器static RAM 静态数据存储器11，microprocessor ICs 微处理器：13个分类：12，modelling primitivvves 建模源：9个分类：13，operational amplifiers 运算放大器：7个分类：dual 双运放ideal 理想运放macromodel 大量使用的运放octal 8运放quad 4运放single 单运放triple 三运放14，optoelectronics 光电器件：11个分类：7-segment displays 7段显示alphanumeric LCDs 液晶数码显示bargraph displays 条形显示dot matrix displays 点阵显示graphical LCDs 液晶图形显示lamps 灯LCD controllers 液晶控制器LCD controllers 液晶面板显示LEDs 发光二极管optocouplers 光电耦合serial LCDs 串行液晶显示15，resistors 电阻：11个分类：metal film 金属膜电阻10 watt wirewound 10w绕线电阻2w metal film 2w 金属膜电阻3 watt wirewound 3w 绕线电阻7 watt wirewound 7w 绕线电阻generix 普通电阻high voltage 高压电阻NTC 负温度系数热敏电阻resistor packs 排阻variable 滑动变阻器varisitors可变电阻参考试验中采用的可变电阻是：POT-HG16，simulator primitives 仿真源：3个类别：flip-flops 触发器gates 门电路sources 电源17，switches and relays 开关和继电器：4个类别：key pads 键盘relays 普通继电器relays(specific) 专用继电器switches 开关18,switching devices 开关器件：4个分类：DIACs 两端交流开关generic 普通开关元件SCRs 可控硅TRIACs 三端双向可控硅19，真空管：20，传感器：2个分类：pressure 压力传感器temperature 温度传感器21，晶体管：8个分类：bipolar 双极型晶体管generic 普通晶体管(错误）IGBT 绝缘栅双极晶体管JFET 结型场效应管MOSFET 金属氧化物场效应管RF power LDMOS 射频功率LDMOS管RF power VDMOS 射频功率VDMOS管unijunction 单结晶体管Electromechanical 电机MOTOR AC 交流电机MOTOR SERVO 伺服电机双相步进电机motor-bistepper（Bipolar Stepper Motor），四相步进电机motor-stepper（unipolar stepper motor）驱动电路，用ULN2003可以，proteus中推荐的L298和L6201(电子元件-步进电机中有L298资料）+++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++步进电机,可以用MTD2003,UN2916等专用芯片Proteus中图形液晶模块驱动芯片一览表LM3228 LM3229 LM3267 LM3283LM3287 LM4228 LM4265 LM4267LM4283 LM4287 PG12864F PG24064FPG128128A PG160128AAGM1232G EW12A03GLY HDM32GS12-B HDM32GS12Y-BHDG12864F-1 HDS12864F-3 HDG12864L-4 HDG12864L-6NOKIA7110 TG126410GFSB TG13650FEYAMPIRE128x64 LGM12641BS1RPROTEUS原理图元器件库详细说明单双向可控硅、包括电阻、电容、二极管、三极管和PCB的连接器符号、包括虚拟仪器和有源器件、拨动开关、键盘、可调电位器和开关、包括二极管和整流桥、稳压管、变容二极管、大功率二极管、高速二极管、可控硅、包括LCD、LED、LED阵列包括三极管包括场效应管包括模拟元器件AS 稳压二极管、全桥、74系列、及其他。

MSCSM120TAM11CTPAG 三相三导线SiC MOSFET电源模块说明书

MSCSM120TAM11CTPAGDatasheet Triple Phase Leg SiC MOSFET Power ModuleJanuary2020ContentsRevision History (1)1.1Revision 1.0 (1)Product Overview (2)2.1Features..............................................................................................................................................................32.2Benefits...............................................................................................................................................................32.3Applications.. (3)Electrical Specification (4)3.1SiC MOSFET Characteristics (Per MOSFET).........................................................................................................43.2Reverse SiC Diode Ratings and Characteristics (Per SiC Diode)..........................................................................63.3Thermal and Package Characteristics.................................................................................................................63.4Typical SiC MOSFET Performance Curves...........................................................................................................83.5Typical SiC Diode Performance Curves. (11)Package Specifications (12)4.1Package Outline Drawing (12)Contents1Revision HistoryThe revision history describes the changes that were implemented in the document.The changes are listed by revision,starting with the most current publication.1.1Revision 1.0Revision 1.0was published in January 2020.It is the first publication of this document.Revision HistoryThe MSCSM120TAM11CTPAG device is a3phase leg1200V/251A full Silicon Carbide(SiC)power module.Figure1•MSCSM120TAM11CTPAG Electrical SchematicFigure2•MSCSM120TAM11CTPAG Pinout LocationAll ratings at T J=25°C,unless otherwise specified.Caution:These devices are sensitive to electrostatic discharge.Proper handling procedures should befollowed.2.1FeaturesThe following are key features of the MSCSM120TAM11CTPAG device:•SiC Power MOSFET◦Low R DS(on)◦High temperature performance•SiC Schottky Diode◦Zero reverse recovery◦Zero forward recovery◦Temperature Independent switching behavior◦Positive temperature coefficient on VF•Very low stray inductance•Internal thermistor for temperature monitoring•Aluminum nitride(AlN)substrate for improved thermal performance 2.2BenefitsThe following are benefits of the MSCSM120TAM11CTPAG device:•High power and efficient converters and inverters•Outstanding performance at high frequency operation•Direct mounting to heatsink(isolated package)•Low junction-to-case thermal resistance•Solderable terminals for power and signal,for easy PCB mounting•Low profile•RoHS compliant2.3ApplicationsThe MSCSM120TAM11CTPAG device is designed for the following applications:•Uninterruptible power supplies•Switched Mode power supplies•EV motor and traction drive•Welding converters3Electrical SpecificationsThis section shows the electrical specifications of the MSCSM120TAM11CTPAG device.3.1SiC MOSFET Characteristics (Per MOSFET)The following table shows the absolute maximum ratings per MOSFET of the MSCSM120TAM11CTPAG device.Table 1•Absolute Maximum RatingsUnit Max Ratings ParameterSymbol V 1200Drain-source voltage V DSS A2511T C =25°C Continuous drain currentI D2001T C =80°C500Pulsed drain current I DM V –10/25Gate-source voltage V GS mΩ10.4Drain-source ON resistance R DSon W 1042T C =25°CPower dissipationP DNote:1.Specification of SiC MOSFET device,but output current must be limited due to size of power connectors.The following table shows the electrical characteristics per MOSFET of the MSCSM120TAM11CTPAG device.Table 2•Electrical CharacteristicsUnit Max Typ MinTest Conditions CharacteristicSymbol µA 30030V GS =0V;V DS =1200V Zero gate voltage drain current I DSS mΩ10.48.4T J =25°C V GS =20V I D =120ADrain-source on resistanceR DS(on)13.4T J =175°CV 2.81.8V GS =V DS ,I D =3mA Gate threshold voltage V GS(th)nA300V GS =20V,V DS =0VGate-source leakage currentI GSSThe following table shows the dynamic characteristics per MOSFET of the MSCSM120TAM11CTPAG device.Table 3•Dynamic CharacteristicsUnit MaxTyp MinTest Conditions Characteristic Symbol pF9060V GS =0V V DS =1000V Input capacitance C iss 810Output capacitance C oss f =1MHz75Reverse transfer capacitance C rss nC696V GS =–5V/20V V Bus =800V Total gate charge Q g 123Gate-source charge Q gs I D =120A 150Gate-drain charge Q gd ns 30V GS =–5V/20V V Bus =600V Turn-on delay time T d(on)30Rise time T r I D =150A50Turn-off delay time T d(off)R Gon =2.7Ω;R Goff =1.6Ω25Fall time T f mJ 3.0T J =150°C Inductive switching V GS =–5V/20V Turn on energy E on mJ 2.0T J =150°CTurn off energyE offV Bus =600V I D =150A R Gon =2.7ΩR Goff =1.6ΩΩ2.0Internal gate resistanceR Gint °C/W0.144Junction-to-case thermal resistanceR thJCThe following table shows the body diode ratings and characteristics per MOSFET of the MSCSM120TAM11CTPAG device.Table 4•Body Diode Ratings and CharacteristicsUnit MaxTyp MinTest Conditions Characteristic Symbol V4.0V GS =0V;I SD =120A Diode forward voltageV SD4.2V GS =–5V ;I SD =120Ans 90I SD =120A;V GS =–5V V R =800V;d iF /dt =3000A/μsReverse recovery time t rr nC 1650Reverse recovery charge Q rr A40.5Reverse recovery currentI rr3.2Reverse SiC Diode Ratings and Characteristics(Per SiC Diode)The following table shows the SiC diode ratings and characteristics per SiC diode of theMSCSM120TAM11CTPAG device.Table5•Reverse SiC Diode Ratings and Characteristics(per SiC diode)CharacteristicSymbolTest ConditionsTypMaxMinUnit V RRMV Peak repetitive reverse voltage1200Reverse leakage currentI RMV R=1200VT J=25°CμA40015250T J=175°CAI FDC forward current50T C=100°CI F=50AV FDiode forward voltageV1.81.5T J=25°C2.1T J=175°CQcTotal capacitive chargenCV R=600V224Total capacitanceCpF246f=1MHz,V R=400V182f=1MHz,V R=800VR thJC0.573Junction-to-case thermal resistance°C/W 3.3Thermal and Package CharacteristicsThe following table shows the package characteristics of the MSCSM120TAM11CTPAG device.Table6•Package CharacteristicsMaxUnit SymbolCharacteristicMinV ISOLV RMS isolation voltage,any terminal to case t=1min,50Hz/60Hz4000Operating junction temperature rangeT J–40°C175Recommended junction temperature under switching conditionsT JOP–40T Jmax–25 T STGStorage temperature range–40125 T COperating case temperature–40125To heatsinkTorqueMounting torqueN.mM653Wtg250Package weightThe following table shows the temperature sensor NTC(see application note APT0406on)of the MSCSM120TAM11CTPAG device.Table7•Temperature Sensor NTCSymbolCharacteristicTypMaxMinUnit Resistance at25°CR2550kΩ∆R25/R255% B25/85T25=298.15K3952K∆B/BT C=100°C4%3.4Typical SiC MOSFET Performance CurvesThis section shows the typical SiC MOSFET performance curves of the MSCSM120TAM11CTPAG device.Figure3•Maximum Thermal ImpedanceFigure4•Output Characteristics,T J=25°CFigure6•Normalized R DS(on)vs.TemperatureFigure8•Switching Energy vs.Rg Figure9•Switching Energy vs.CurrentFigure10•Capacitance vs.Drain Source VoltageFigure12•Body Diode Characteristics,T J=25°C°CFigure16•Operating Frequency vs.Drain Current3.5Typical SiC Diode Performance CurvesThis sections shows the typical SiC diode performance curves of the MSCSM120TAM11CTPAG device.Figure17•Maximum Thermal ImpedanceFigure18•Forward CharacteristicsThis section shows the package specification of the MSCSM120TAM11CTPAG device.4.1Package Outline DrawingThe following figure illustrates the package outline of the MSCSM120TAM11CTPAG device.The dimensionsin the following figure are in millimeters.Figure20•Package Outline Drawingat .Microsemi's product warranty is set forth in Microsemi's Sales Order Terms and rmation contained in this publication is provided for the sole purpose of designing with and using Microsemi rmation regarding device applications and the like is provided only for your convenience and may be superseded by updates.Buyer shall not rely on any data and performance specifications or parameters provided by Microsemi.It is your responsibility to ensure that your application meets with your specifications.THIS INFORMATION IS PROVIDED "AS IS."MICROSEMI MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED,WRITTEN OR ORAL,STATUTORY OR OTHERWISE,RELATED TO THE INFORMATION,INCLUDING BUT NOT LIMITED TO ITS CONDITION,QUALITY ,PERFORMANCE,NON-INFRINGEMENT,MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE.IN NO EVENT WILL MICROSEMI BE LIABLE FOR ANY INDIRECT,SPECIAL,PUNITIVE,INCIDENTAL OR CONSEQUENTIAL LOSS,DAMAGE,COST OR EXPENSE WHATSOEVER RELATED TO THIS INFORMATION OR ITS USE,HOWEVER CAUSED,EVEN IF MICROSEMI HAS BEEN ADVISED OF THE POSSIBILITY OR THE DAMAGES ARE FORESEEABLE.TO THE FULLEST EXTENT ALLOWED BY LAW,MICROSEMI’S TOTAL LIABILITY ON ALL CLAIMS IN RELATED TO THIS INFORMATION OR ITS USE WILL NOT EXCEED THE AMOUNT OF FEES,IF ANY ,YOU PAID DIRECTLY TO MICROSEMI FOR THIS e of Microsemi devices in life support,mission-critical equipment or applications,and/or safety applications is entirely at the buyer’s risk,and the buyer agrees to defend and indemnify Microsemi from any and all damages,claims,suits,or expenses resulting from such use.No licenses are conveyed,implicitly or otherwise,under any Microsemi intellectual property rights unless otherwisestated.Microsemi2355W.Chandler Blvd.Chandler,AZ 85224USAWithin the USA:+1(480)792-7200Fax:+1(480)792-7277 ©2020Microsemi andits corporate affiliates.All rights reserved.Microsemi and the Microsemi logo aretrademarks of Microsemi Corporation and itscorporate affiliates.All other trademarks andservice marks are the property of theirrespective owners.Microsemi Corporation,a subsidiary of Microchip Technology Inc.(Nasdaq:MCHP),and its corporate affiliates are leading providers of smart,connected and secure embedded control solutions.Their easy-to-use development tools and comprehensive product portfolio enable customers to create optimal designs which reduce risk while lowering total system cost and time to market.These solutions serve more than 120,000customers across the industrial,automotive,consumer,aerospace and defense,communications and computing markets.Headquartered in Chandler,Arizona,the company offers outstanding technical support along with dependable delivery and quality.Learn more at .MSCC-0344-DS-01064-1.0-0120Legal。

P4SMAJ68A

Maximum Clamping Current Voltage @I PP IT (mA) VC(V) Test 10 10 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 10.8 10.5 11.7 11.3 12.5 12.1 13.8 13.4 15.0 14.5 16.2 15.6 17.3 16.7 19.0 18.2 22.0 21.2 23.5 22.5 26.5 25.2 29.1 27.7 31.9 30.6 34.7 33.2 39.1 37.5 43.5 41.4 47.7 45.7 52.0 49.9 56.4 53.9 61.9 59.3 67.8 64.8 73.5 70.1
P4SMAJ68A
TYPE
(Uni) (BI)
Reverse Stand-Off Voltage VRMW (V) 5.50 5.80 6.05 6.40 6.63 7.02 7.37 7.78 8.10 8.55 8.92 9.40 9.72 10.2 10.5 11.1 12.1 12.8 12.9 13.6 14.5 15.3 16.2 17.1 17.8 18.8 19.4 20.5 21.8 23.1 24.3 25.6 26.8 28.2 29.1 30.8 31.6 33.3 34.8 36.8 38.1 40.8 41.3 43.6
ቤተ መጻሕፍቲ ባይዱ
P4SMAJ6.8C P4SMAJ6.8CA P4SMAJ7.5 P4SMAJ7.5CA P4SMAJ8.2C P4SMAJ8.2CA P4SMAJ9.1C P4SMAJ9.1CA P4SMAJ10C P4SMAJ10CA P4SMAJ11C P4SMAJ11CA P4SMAJ12C P4SMAJ12CA P4SMAJ13C P4SMAJ13CA P4SMAJ15C P4SMAJ15CA P4SMAJ16C P4SMAJ16CA P4SMAJ18C P4SMAJ18CA P4SMAJ20C P4SMAJ20CA P4SMAJ22C P4SMAJ22CA P4SMAJ24C P4SMAJ24CA P4SMAJ27C P4SMAJ27CA P4SMAJ30C P4SMAJ30CA P4SMAJ33C P4SMAJ33CA P4SMAJ36C P4SMAJ36CA P4SMAJ39C P4SMAJ39CA P4SMAJ43C P4SMAJ43CA P4SMAJ47C P4SMAJ47CA P4SMAJ51C P4SMAJ51CA

SA5.0C-T3中文资料

Measu100
1000
VRWM, REVERSE STANDOFF VOLTAGE (V) Fig. 2 Typical Junction Capacitance
PP, PEAK PULSE POWER (kW)
1.0
0.1
TC = 25°C
0.1
1.0
54.00 54.00 58.00 58.00
60.00 60.00 64.00 64.00
70.00 70.00 75.00 75.00
78.00 78.00 85.00 85.00
90.00 90.00 100.00 100.00
110.00 110.00 120.00 120.00
130.00 130.00 150.00 150.00
元器件交易网
WTE
POWER SEMICONDUCTORS
SA5.0 – SA170CA Pb
500W TRANSIENT VOLTAGE SUPPRESSOR
Features
! Glass Passivated Die Construction
! 500W Peak Pulse Power Dissipation ! 5.0V – 170V Standoff Voltage ! Uni- and Bi-Directional Versions Available ! Excellent Clamping Capability ! Fast Response Time ! Plastic Case Material has UL Flammability
© 2006 Won-Top Electronics
元器件交易网
UNI-DIRECTIONAL 500 WATT AXIAL LEAD TVS

晶体管启动器配件说明书

Length
Packing qty.
Screw head
SRWKITM5X10MM SRWKITM4X15MM SRWKITM5X23MM SRWKITM5X30MM
M5
10mm
M4
15mm
M5
23mm
M5
30mm
20
Pozidrive PZ2
20
Philips
20
Torx T20
20
Torx T20
- Graphite thermal pad for RG series with adhesive on one side
- Width x Height x Thickness = 14 x 35 x 0.13 mm
- Packing qty. 10 pcs.
Ordering Key
RFHT
- Phase change thermal pad for RF1 - Width x Height x Thickness = 19 x 21 x 0.13 mm - Packing qty. 10 pcs.
Suffix H8 added to SSR part no. refers to factory mounted DIN clip. Conditions apply. Please ask your Sales representative for further details.
Ordering Key
Description 250V module with LED 250V module with LED + varistor across output terminals 250V module with pins for easy removal of RP unit 250V module with pins for easy removal of RP unit + LED 600V module with LED

SOCAY双向瞬态TVS二极管SMAJ12CA型号

SOCAY双向TVS二极管SMAJ12CA型号说明
硕凯电子（Sylvia）
一、产品图
1、为表面安装应用优化电路板空间
2、低泄漏
3、单向单元
4、玻璃钝化结
5、低电感
6、优良的钳位能力
7、400W的峰值功率能力在10×1000μ波形重复率（占空比）：0.01%
8、快速响应时间：从0伏特到最小击穿电压通常小于1.0ps
9、典型的，在电压高于12V时，反向漏电流小于5μA
10、高温焊接：终端260°C/40秒
11、典型的最大温度系数△Vbr=0.1%x Vbr@25°C x△T
12、塑料包装有保险商实验室可燃性94V-0
13、无铅镀雾锡
14、无卤化，符合RoHS
15、典型失效模式是在指定的电压或电流下出现
16、晶须测试是基于JEDEC JESD201A每个表4a及4c进行的
17、IEC-61000-4-2ESD15kV(空气)，8kV(接触)
18、数据线的ESD保护符合IEC61000-4-2(IEC801-2)
19、数据线的EFT保护符合IEC61000-4-4(IEC801-4)
三、应用范围
TVS器件非常适合保护I/O接口，Vcc总线和其他应用于电信、计算机、工业和消费电子应用的易损电路。

五、UL认证编号
六、特性曲线
七、产品尺寸。

Isis元件库中英文对照

SCR 晶闸管
PLUG ? 插头
PLUG AC FEMALE 三相交流插头
SOCKET ? 插座
SOURCE CURRENT 电流源
SOURCE VOLTAGE 电压源
SPEAKER 扬声器
SW ? 开关
SW-DPDY ? 双刀双掷开关
SW-SPST ? 单刀单掷开关
SW-PB 按钮
BUFFER 缓冲器
BUZZER 蜂鸣器
CAP 电容
CAPACITOR 电容
CAPACITOR POL 有极性电容
CAPVAR 可调电容
CIRCUIT BREAKER 熔断丝
COAX 同轴电缆
CON 插口
CRYSTAL 晶体整荡器
DB 并行插口
DIODE 二极管
DIODE SCHOTTKY 稳压二极管
Switching Devices 晶阊管
Transistors 晶体管（三极管，场效应管）
TTL 74 series
TTL 74ALS series
TTL 74AS series
TTL 74F series
TTL 74HC series
TTL 74HCT series
LOGICSTATE 逻辑状态用鼠标点击,可改变该方框连接位置的逻辑状态
LOGICTOGGLE 逻辑触发
MASTERSWITCH 按钮手动闭合,立即自动打开
MOTOR 马达
OR 或门
POT-LIN 三引线可变电阻器
POWER 电源
RES 电阻
RESISTOR 电阻器
SWITCH 按钮手动按一下一个状态

msc1210中文

参数
模拟输入 AIN0-AIN7 AINCOM 模拟输入范
围
全输入电压范围差分输入阻抗
输入电流带宽
快速沉积滤波器 Sinc2滤波器 Sinc2滤波器
可编程增益放大器输入电容输入漏电流熔断电流
偏移DAC 偏移DAC范围偏移DAC单调性偏移DAC增益偏差偏移DAC增益偏差漂移
条件
缓冲区关闭缓冲区打开 IN+ - IN- 看图4 缓冲区关闭缓冲区打开
256
内部 MOVX 静态随机存储器字节 1024
1024
1024
1024
数
外部可存取存储器字节数
程序 64K 数据 64K
程序 64K 数据 64K
程序 64K 数据 64K
程序 64K 数据 64K
注释 1 所有器件的外围特性相同仅闪存容量不同 2 类型号的最后一位数字代表片内闪存容量的大小= 2N KB
DC下 fCM = 60Hz, fDATA = 10Hz fCM = 50Hz, fDATA = 50Hz fCM = 60Hz, fDATA = 60Hz fSIG = 50Hz, fDATA = 50Hz fSIG = 60Hz, fDATA = 60Hz
DC下 dB =–20log( VOUT/ VDD)
MSC1210YX
最小值
典型值
最大值
单位
AGND-0.1 AGND
1
5/PGA 0.5
AVDD+0.1
AVDD-1.5
+VREF/PGA
0.469 • fDATA 0.318 • fDATA 0.262 • fDATA
9 0.5 +6
128

AF4512C中文资料

P & N-Channel 30-V (D-S) MOSFETFeatures -Low r DS(on) Provides Higher Efficiency and Extends Battery Life-Miniature SO-8 Surface Mount Package Saves Board Space -High power and current handling capability -Low side high current DC-DC Converter applicationsProduct SummaryV DS (V) r DS(on) (m Ω) I D (A) 40@V GS =4.5V6.0 30 28@VGS =10V 7.0 80@V GS =-4.5V -4.0 -3052@V GS =-10V-5.2Pin AssignmentsSOP-8D1D1D2D2S1G1S2G2General DescriptionThese miniature surface mount MOSFETs utilize HighCell Density process. Low r DS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger,telecommunication power system, and telephones power system.Pin DescriptionsPin Name DescriptionS1 Source (NMOS)G1 Gate (NMOS) D1 Drain (NMOS) S2 Source (PMOS) G2 Gate (PMOS) D2 Drain (PMOS)Ordering informationF :MOSFETS: SOP-8Blank : NormalL : Lead Free PackageBlank : Tube or Bulk A : Tape & ReelP & N-Channel 30-V (D-S) MOSFETAbsolute Maximum Ratings (T A =25ºC unless otherwise noted)Symbol Parameter N-Channel P-Channel Units V DS Drain-Source Voltage 30 -30 V GS Gate-Source Voltage 20 -20V T A =25ºC 7 -5.2 I D Continuous Drain Current (Note 1) T A =70ºC 5.6 -6.8A I DM Pulsed Drain Current (Note 2) 20 -20 A I S Continuous Source Current (Diode Conduction) (Note 1) 1.3 -1.3 AT A =25ºC 2.1 2.1P D Power Dissipation (Note 1)T A =70ºC1.3 1.3 W T J , T STG Operating Junction and Storage Temperature Range - -55 to 150 ºCThermal Resistance RatingsSymbol ParameterMaximumUnits R θJC Maximum Junction-to-Case (Note 1) t < 5 sec 40 ºC/W R θJA Maximum Junction-to-Ambient (Note 1) t < 5 sec60 ºC/WNote 1: surface Mounted on 1”x 1” FR4 Board.Note 2: Pulse width limited by maximum junction temperatureSpecifications (T A =25ºC unless otherwise noted)Limits Symbol ParameterTest ConditionsChMin.Typ.Max.UnitStaticV GS =0V, I D =250uA N 30 - -V (BR)DSS Drain-Source breakdown Voltage V GS =0V, I D =-250uA P-30 - - VV DS = V GS , I D =250uA N 1 1.95 3V GS(th) Gate-Threshold Voltage V DS = V GS , I D =-250uAP -1.0-1.7 -3 VV GS =20V, V DS =0V N - - ±100I GSS Gate-Body Leakage V GS =-20V, V DS =0V P - -±100nAV DS =24V, V GS =0V N - - 1I DSSZero Gate Voltage Drain CurrentV DS =-24V, V GS =0V P - - -1 uAV DS =5V, V GS =10V N 20 - -I D(on) On-State Drain Current (Note 3)V DS =-5V, V GS =-10V P-20 - - AV GS =10V, I D =7A - 19 28V GS =4.5V, I D =6A N- 24 40V GS =-10V, I D =-5A - 42 52r DS(on)Drain-Source On-Resistance(Note 3)V GS =-4.5V, I D =-4AP- 65 80 m ΩV DS =15V, I D =7A N - 25 -g fsForward Tranconductance (Note 3)V DS =-15V, I D =-5A P - 10 -SP & N-Channel 30-V (D-S) MOSFETSpecifications (T A =25ºC unless otherwise noted)Limits Symbol ParameterTest ConditionsChMin.Typ.Max.UnitDynamicN - 10.7 26 Q g Total Gate Charge P - 10 13 N - 1.7 -Q gs Gate-Source Charge P - 2.2 - N - 2.1 - Q gd Gate-Drain Charge N-ChannelV DS =15V, V GS =10V I D =7AP-ChannelV DS =-15V, V GS =-10V I D =-5AP - 1.7 -nCSwitching N - 8 16 t d(on)Turn-On Delay TimeP - 7 14 N - 5 10 t r Rise Time P - 13 24N - 23 37 t d(off) Turn-Off Delay Time P - 14 25 N - 3 6 t f Fall-TimeN-ChannelV DD =15, V GS =10V I D =1A, R GEN =6Ω P-ChannelV DD =-15, V GS =-10V I D =-1A, R GEN =6ΩP 9 17nSNote 3: Pulse test: PW < 300us duty cycle < 2%.Note 4: Guaranteed by design, not subject to production testing.P & N-Channel 30-V (D-S) MOSFETTypical Performance Characteristics (N-Channel)P & N-Channel 30-V (D-S) MOSFETTypical Performance Characteristics (N-Channel) (Continued)P & N-Channel 30-V (D-S) MOSFETTypical Performance Characteristics (P-Channel)P & N-Channel 30-V (D-S) MOSFETTypical Performance Characteristics (P-Channel) (Continued)P & N-Channel 30-V (D-S) MOSFETMarking InformationSOP-8L( Top View )4 5 1 2 CAA Y W "A~Z": 27~52~"A~Z": 27~52"X": Lead FreePackage Information Package Type: SOP-8LDimensions In Millimeters Dimensions In InchesSymbolMin. Nom. Max. Min. Nom. Max.A 1.40 1.60 1.75 0.055 0.063 0.069 A1 0.10 - 0.25 0.040 - 0.100 A2 1.30 1.45 1.50 0.051 0.057 0.059B 0.33 0.41 0.51 0.013 0.016 0.020C 0.19 0.20 0.25 0.0075 0.008 0.010D 4.80 5.05 5.30 0.189 0.199 0.209E 3.70 3.90 4.10 0.146 0.154 0.161 e - 1.27 - - 0.050 - H 5.79 5.99 6.20 0.228 0.236 0.244 L 0.38 0.71 1.27 0.015 0.028 0.050 y - - 0.10 - - 0.004θ0O - 8O 0O - 8O。

MPSA13中文资料

500 1000
Figure 8. DC Current Gain
Figure 9. Collector Saturation Region
RθV, TEMPERATURE COEFFICIENTS (mV/°C)
1.6 TJ = 25°C 1.4 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0
元器件交易网
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MPSA13/D
Darlington Transistors
NPN Silicon
COLLECTOR 3
MPSA13 MPSA14 *
*Motorola Preferred Device
BASE 2
EMITTER 1
1 2 3
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCES VCBO VEBO IC PD PD TJ, Tstg Value 30 30 10 500 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C

P4SMAJ12CA-T3中文资料

P4SMAJ SERIES400W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORFeatures!Glass Passivated Die Construction! 400W Peak Pulse Power Dissipation ! 5.0V – 170V Standoff Voltage! Uni- and Bi-Directional Versions Available ! Excellent Clamping Capability ! Fast Response ! Plastic Case Material has UL FlammabilityClassification Rating 94V-O Mechanical Data! Case: SMA/DO-214AC, Molded Plastic ! Terminals: Solder Plated, Solderable per MIL-STD-750, Method 2026! Polarity: Cathode Band Except Bi-Directional ! Marking: Device Code! Weight: 0.064 grams (approx.)!Lead Free: For RoHS / Lead Free Version,Add “-LF” Suffix to Part Number, See Page 6“C” Suffix Designates Bi-directional Devices “A” Suffix Designates 5% Tolerance Devices No Suffix Designates 10% Tolerance DevicesMaximum Ratings and Electrical Characteristics @T A =25°C unless otherwise specifiedCharacteristicSymbol Value Unit Peak Pulse Power Dissipation at T A = 25°C (Note 1, 2, 5) Figure 3P PPM 400 MinimumW Peak Forward Surge Current (Note 3)I FSM 40A Peak Pulse Current on 10/1000µS Waveform (Note 1) Figure 4I PPM See Table 1A Steady State Power Dissipation (Note 4)P M(AV) 1.0W Operating and Storage Temperature RangeT j , T STG-55 to +150°CNote: 1. Non-repetitive current pulse per Figure 4 and derated above T A = 25°C per Figure 1.2. Mounted on 5.0mm 2 copper pad to each terminal.3. 8.3ms single half sine-wave duty cycle = 4 pulses per minutes maximum.4. Lead temperature at 75°C.5. Peak pulse power waveform is 10/1000µS.WTESMA/DO-214AC Dim Min MaxA2.50 2.90B4.00 4.60C1.20 1.60D0.1520.305E4.805.28F2.00 2.44G0.0510.203H0.76 1.52All Dimensions in mm0123I ,P EA K P U L S E C U R R E N T (%I )P p p t,TIME (ms)Fig.4Pulse Waveform255075100125150175200100755025T ,AMBIENT TEMPERATURE (C)Fig.1Pulse Derating CurveA °P E A K P U L S E D E R A T I N G I N %O F P E A K P OW E R O R C U R R E N T0.11.0t PULSE WIDTH (s)Fig.3Pulse Rating Curvep m 0.1101001.010100010000P ,P E A K P U L S E P O W E R (k W )d 100101001000100001101001000C ,J U N C T I O N C A P A C I T A N C E (p F )J V ,STANDOFF VOLTAGE (V)Fig.2Typical Junction CapacitanceWMP4SMAJ5.0A P4SMAJ6.0 P4SMAJ6.0A HEHFHG5.006.006.006.406.676.677.258.457.671010109.211.410.343.535.138.8800800800P4SMAJ6.5 P4SMAJ6.5A P4SMAJ7.0 P4SMAJ7.0A HHHKHLHM6.506.507.007.007.227.227.787.789.148.309.868.951010101012.311.213.312.032.535.730.133.3500500200200P4SMAJ7.5 P4SMAJ7.5A P4SMAJ8.0 P4SMAJ8.0A HNHPHQHR7.507.508.008.008.338.338.998.9910.679.5811.3010.23111114.312.915.013.628.031.026.529.41001005050P4SMAJ8.5 P4SMAJ8.5A P4SMAJ9.0 P4SMAJ9.0A HSHTHUHV8.508.509.009.009.449.4410.0010.0011.9210.8212.6011.50111115.914.416.915.425.127.723.626.0101055P4SMAJ10 P4SMAJ10A P4SMAJ11 P4SMAJ11A HWHXHYHZ10.0010.0011.0011.0011.1011.1012.2012.2014.1012.8015.4014.00111118.817.020.118.221.223.520.022.01111P4SMAJ12 P4SMAJ12A P4SMAJ13 P4SMAJ13A IDIEIFIG12.0012.0013.0013.0013.3013.3014.4014.4016.9015.3018.2016.50111122.019.923.821.518.120.116.818.61111P4SMAJ14 P4SMAJ14A P4SMAJ15 P4SMAJ15A IHIKILIM14.0014.0015.0015.0015.6015.6016.7016.7019.8017.9021.1019.20111125.823.226.924.415.517.214.816.41111P4SMAJ16 P4SMAJ16A P4SMAJ17 P4SMAJ17A INIPIQIR16.0016.0017.0017.0017.8017.8018.9018.9022.6020.5023.9021.70111128.826.030.527.613.815.313.114.51111P4SMAJ18 P4SMAJ18A P4SMAJ20 P4SMAJ20A ISITIUIV18.0018.0020.0020.0020.0020.0022.2022.2025.3023.3028.1025.50111132.229.235.832.412.413.711.112.31111P4SMAJ22 P4SMAJ22A P4SMAJ24 P4SMAJ24A IWIXIYIZ22.0022.0024.0024.0024.4024.4026.7026.7030.9028.0033.8030.70111139.435.543.038.910.111.29.310.31111P4SMAJ26 P4SMAJ26A P4SMAJ28 P4SMAJ28A JDJEJFJG26.0026.0028.0028.0028.9028.9031.1031.1036.6033.2039.4035.80111146.642.150.045.48.69.58.08.81111P4SMAJ30 P4SMAJ30A P4SMAJ33 P4SMAJ33A JHJKJLJM30.0030.0033.0033.0033.3033.3036.7036.7042.2038.3046.5042.20111153.548.459.053.37.58.36.87.51111P4SMAJ36 P4SMAJ36A P4SMAJ40 P4SMAJ40A JNJPJQJR36.0036.0040.0040.0040.0040.0044.4044.4050.7046.0056.3051.10111164.358.171.464.56.26.95.66.21111P4SMAJ43 P4SMAJ43A P4SMAJ45 P4SMAJ45A JSJTJUJV43.0043.0045.0045.0047.8047.8050.0050.0060.5054.9063.3057.50111176.769.480.372.75.25.75.05.51111P4SMAJ48 P4SMAJ48A P4SMAJ51 P4SMAJ51A JWJXJYJZ48.0048.0051.0051.0053.3053.3056.7056.7067.5061.3071.8065.20111185.577.491.182.44.75.24.44.91111P4SMAJ54 P4SMAJ54A P4SMAJ58 P4SMAJ58A RDRERFRG54.0054.0058.0058.0060.0060.0064.4064.4076.0069.0081.6074.10111196.387.1103.093.64.24.63.94.31111P4SMAJ60 P4SMAJ60A P4SMAJ64 P4SMAJ64A RHRKRLRM60.0060.0064.0064.0066.7066.7071.1071.1084.5076.7090.1081.801111107.096.8114.0103.03.74.13.53.91111P4SMAJ70 P4SMAJ70A P4SMAJ75 P4SMAJ75A RNRPRQRR70.0070.0075.0075.0077.8077.8083.3083.3098.6089.50105.7095.801111125.0113.0134.0121.03.23.53.03.31111P4SMAJ78 P4SMAJ78A P4SMAJ85 P4SMAJ85A RSRTRURV78.0078.0085.0085.0086.7086.7094.4094.40109.8099.70119.20108.201111139.0126.0151.0137.02.92.22.62.91111P4SMAJ90P4SMAJ90A P4SMAJ100 P4SMAJ100A RWRXRYRZ90.0090.00100.00100.00100.00100.00111.00111.00126.50115.50141.00128.001111160.0146.0179.0162.02.52.72.22.51111P4SMAJ110 P4SMAJ110A P4SMAJ120 P4SMAJ120A SDSESFSG110.00110.00120.00120.00122.00122.00133.00133.00154.50140.50169.00153.001111196.0177.0214.0193.02.02.31.92.01111P4SMAJ130 P4SMAJ130A P4SMAJ150 P4SMAJ150A SHSKSLSM130.00130.00150.00150.00144.00144.00167.00167.00182.50165.50211.50192.501111231.0209.0268.0243.01.71.91.51.61111P4SMAJ160 P4SMAJ160A P4SMAJ170 P4SMAJ170A SNSPSQSR160.00160.00170.00170.00178.00178.00189.00189.00226.00205.00239.50217.501111287.0259.0304.0275.01.41.51.31.41111P4SMAJ5.0CA P4SMAJ6.0C P4SMAJ6.0CA TETFTG5.006.006.006.406.676.677.258.457.671010109.211.410.343.535.138.8160016001600P4SMAJ6.5C P4SMAJ6.5CA P4SMAJ7.0C P4SMAJ7.0CA THTKTLTM6.506.507.007.007.227.227.787.789.148.309.868.951010101012.311.213.312.032.535.730.133.310001000400400P4SMAJ7.5C P4SMAJ7.5CA P4SMAJ8.0C P4SMAJ8.0CA TNTPTQTR7.507.508.008.008.338.338.998.9910.679.5811.3010.23111114.312.915.013.628.031.026.529.4200200100100P4SMAJ8.5C P4SMAJ8.5CA P4SMAJ9.0C P4SMAJ9.0CA TSTTTUTV8.508.509.009.009.449.4410.0010.0011.9210.8212.6011.50111115.914.416.915.425.127.723.626.0202055P4SMAJ10C P4SMAJ10CA P4SMAJ11C P4SMAJ11CA TWTXTYTZ10.0010.0011.0011.0011.1011.1012.2012.2014.1012.8015.4014.00111118.817.020.118.221.223.520.022.01111P4SMAJ12C P4SMAJ12CA P4SMAJ13C P4SMAJ13CA UDUEUFUG12.0012.0013.0013.0013.3013.3014.4014.4016.9015.3018.2016.50111122.019.923.821.518.120.116.818.61111P4SMAJ14C P4SMAJ14CA P4SMAJ15C P4SMAJ15CA UHUKULUM14.0014.0015.0015.0015.6015.6016.7016.7019.8017.9021.1019.20111125.823.226.924.415.517.214.816.41111P4SMAJ16C P4SMAJ16CA P4SMAJ17C P4SMAJ17CA UNUPUQUR16.0016.0017.0017.0017.8017.8018.9018.9022.6020.5023.9021.70111128.826.030.527.613.815.313.114.51111P4SMAJ18C P4SMAJ18CA P4SMAJ20C P4SMAJ20CA USUTUUUV18.0018.0020.0020.0020.0020.0022.2022.2025.3023.3028.1025.50111132.229.235.832.412.413.711.112.31111P4SMAJ22C P4SMAJ22CA P4SMAJ24C P4SMAJ24CA UWUXUYUZ22.0022.0024.0024.0024.4024.4026.7026.7030.9028.0033.8030.70111139.435.543.038.910.111.29.310.31111P4SMAJ26C P4SMAJ26CA P4SMAJ28C P4SMAJ28CA VDVEVFVG26.0026.0028.0028.0028.9028.9031.1031.1036.6033.2039.4035.80111146.642.150.045.48.69.58.08.81111P4SMAJ30C P4SMAJ30CA P4SMAJ33C P4SMAJ33CA VHVKVLVM30.0030.0033.0033.0033.3033.3036.7036.7042.2038.3046.5042.20111153.548.459.053.37.58.36.87.51111P4SMAJ36C P4SMAJ36CA P4SMAJ40C P4SMAJ40CA VNVPVQVR36.0036.0040.0040.0040.0040.0044.4044.4050.7046.0056.3051.10111164.358.171.464.56.26.95.66.21111P4SMAJ43C P4SMAJ43CA P4SMAJ45C P4SMAJ45CA VSVTVUVV43.0043.0045.0045.0047.8047.8050.0050.0060.5054.9063.3057.50111176.769.480.372.75.25.75.05.51111P4SMAJ48C P4SMAJ48CA P4SMAJ51C P4SMAJ51CA VWVXVYVZ48.0048.0051.0051.0053.3053.3056.7056.7067.5061.3071.8065.20111185.577.491.182.44.75.24.44.91111P4SMAJ54C P4SMAJ54CA P4SMAJ58C P4SMAJ58CA WDWEWFWG54.0054.0058.0058.0060.0060.0064.4064.4076.0069.0081.6074.10111196.387.1103.093.64.24.63.94.31111P4SMAJ60C P4SMAJ60CA P4SMAJ64C P4SMAJ64CA WHWKWLWM60.0060.0064.0064.0066.7066.7071.1071.1084.5076.7090.1081.801111107.096.8114.0103.03.74.13.53.91111P4SMAJ70C P4SMAJ70CA P4SMAJ75C P4SMAJ75CA WNWPWQWR70.0070.0075.0075.0077.8077.8083.3083.3098.6089.50105.7095.801111125.0113.0134.0121.03.23.53.03.31111P4SMAJ78C P4SMAJ78CA P4SMAJ85C P4SMAJ85CA WSWTWUWV78.0078.0085.0085.0086.7086.7094.4094.40109.8099.70119.20108.201111139.0126.0151.0137.02.92.22.62.91111P4SMAJ90CP4SMAJ90CA P4SMAJ100C P4SMAJ100CA WWWXWYWZ90.0090.00100.00100.00100.00100.00111.00111.00126.50115.50141.00128.001111160.0146.0179.0162.02.52.72.22.51111P4SMAJ110C P4SMAJ110CA P4SMAJ120C P4SMAJ120CA XDXEXFXG110.00110.00120.00120.00122.00122.00133.00133.00154.50140.50169.00153.001111196.0177.0214.0193.02.02.31.92.01111P4SMAJ130C P4SMAJ130CA P4SMAJ150C P4SMAJ150CA XHXKXLXM130.00130.00150.00150.00144.00144.00167.00167.00182.50165.50211.50192.501111231.0209.0268.0243.01.71.91.51.61111P4SMAJ160C P4SMAJ160CA P4SMAJ170C P4SMAJ170CA XNXPXQXR160.00160.00170.00170.00178.00178.00189.00189.00226.00205.00239.50217.501111287.0259.0304.0275.01.41.51.31.41111MARKING INFORMATION RECOMMENDED FOOTPRINTPACKAGING INFORMATIONORDERING INFORMATIONProduct No.Package TypeShipping QuantityP4SMAJxx-T3SMA7500/Tape & Reel1. Shipping quantity given is for minimum packing quantity only. For minimumorder quantity, please consult the Sales Department.2.To order RoHS / Lead Free version, add “-LF” suffix to part number above.For example, P4SMAJ5.0-T3-LF .Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, WTE cannot assume any responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to manufacturer. WTE reserves the right to change any or all information herein without further notice.WARNING : DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in life support devices or systems without the express written approval.We power your everyday.Won-Top Electronics Co., Ltd.No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan Phone: 886-7-822-5408 or 886-7-822-5410Fax: 886-7-822-5417Email: sales@Internet: 。

P4SMA550CA中文资料

20.50
22.80 25.20
1
33.2
12.3
5
P4SMA27A
P4SMA27CA 27A 27C
23.10
25.70 28.40
1
37.5
10.9
5
P4SMA30A
P4SMA30CA 30A 30C
25.60
28.50 31.50
1
41.4
9.9
5
P4SMA33A
P4SMA33CA 33A 33C
36.80
40.90 45.20
1
59.3
6.9
5
P4SMA47A
P4SMA47CA 47A 47C
40.20
44.70 49.40
1
64.8
6.3
5
P4SMA51A
P4SMA51CA 51A 51C
43.60
48.50 53.60
1
70.1
5.8
5
P4SMA56A
P4SMA56CA 56A 56C
Case:
JEDEC DO214AC. Molded plastic over
glass passivated junction
Mounting Position: Any
Polarity:
Color band denoted positive end
(cathode) except Bidirectional
(Volts)
Maximum Peak Pulse
Current IPP (A)
Maximum Reverse Leakage IR @ VR (µA)
P4SMA6.8A P4SMA6.8CA 6V8A 6V8C 5.80

M4212C M4712C 用户指南说明书

AV Component1 Component2 RGB PC HDMI/DVIPC Rear side of the product.Component2RGB PC HDMI/DVI RGB PC HDMI/DVIRGB INRGB OUTRGB IN RGB OUT RGB IN RGB OUT RGB IN RGB OUTAVComponent1Component2RGB PCHDMI/DVIWhen the BNC cable is connected simultaneously with S-Video cable, S-Video input has a priority.Component1Component2RGB PC HDMI/DVIAVComponent1Component2RGB PC HDMI/DVIConnect the video/audio cable as shown in the below figure and then connect the power cord (See page 8).RCA-PC Audio CableProductVCR/DVD/Set-top BoxHDMI to DVI Signal Cable (not included)HDMI Input (480p/576p/720p/1080i/1080p)VCR/DVD/Set-top BoxProductSelect an input signal.Press the INPUT button on the remote control to select the input signal.Or, press the SOURCE button on the back of the product.INPUT SETSOURCE AUTO/SETHDMI Signal Cable (not included)When connecting with a HDMI to DVI signal input cable.When connecting with a HDMI signal input cable.• Select HDMI/DVI-HDMI Supports High Definition input and HDCP (High-bandwidth Digital Content Protection). Some devices require HDCP in order to display HD signals.Note : Dolby Digital is not supported.Input AVComponent1Component2RGB PC HDMI/DVIAVComponent1Component2RGB PC This is where the unit receives signals from the remote control.VividStandardMENUToggles between screen presets.: Select this option to display with a sharp image.Standard: The most general and natural screen display status.MENUBacklight: To control the brightness of the screen,adjust the brightness of LCD panel.Contrast : Adjust the difference between the light and dark levels in the picture.CoolMediumWarmUser Color Settings: Slightly purplish white. Medium: Slightly bluish white.Red / Green / BlueSet your own color levels.Gamma: Set your own gamma value. : -50/0/50On the monitor, high gamma values display whitish images and low gammavalues display high contrast images.16:9Original Widescreen mode.Adjust the screen video.PictureAuto Config. (RGB PC input only) : This button is for the automatic adjustment of the screen position, clock and phase. This function is available for analog signals only.If the picture isn't clear after auto adjustment and characters are stillClear VoiceStandardMusicClear Voice: By differentiating the human sound range from others,it helps users listen to human voices better.Standard: The most commanding and natural audio.To adjust uneven sound volumes across all channels or signals automatically to the mostIf the current time is incorrect, reset the clock manually.1) Press the MENU2) Press the button and then useIn the event of power interruption (disconnection or power failure), the clock must be reset. Once the on or off time is set, these functions operate daily at the preset time.Off time function overrides On time function if they are set to the same time.When On time is operated, input screen is turned on as it was turned off.To choose the language in which the control names are displayed. Use the buttons to selectTile mode and choose Tile alignment and set the ID of the current product to set location.Tile ModeID 1ID 2ID 3ID 4Tile mode (product 1 ~ 4) : r(2) x c(2)rowID 1ID 2ID 1ID 2ID 3ID 4ID 5ID 6ID 7ID 8ID 9ID 1ID 5ID 9ID 13ID 2ID 6ID10ID 14ID 3ID 7ID 11ID 15ID 4ID 8ID 12ID 16Adjust the horizontal size of the screen taking into account the size of the bezel.You can assign a uniqueproducts are connected for display. Specify the number (1~99) using the button。

P4SMAJ56CA

A
B
Dim
SMA Min 2.29 4.00 1.27 0.15 4.80 0.10 0.76 2.01 Max 2.92 4.60 1.63 0.31 5.59 0.20 1.52 2.62
Mechanical Data
· · · · ·
C
A B C D E G H J
D
J
H
G E
All Dimensions in mm
P4SMAJ56CA
P4SMAJ6.8A/CA - P4SMAJ440A/CA
400W Surface Mount Transient Voltage Suppressor
Features
· · · · · · · 400W Peak Pulse Power Dissipation 5.0V - 440V Standoff Voltages Glass Passivated Die Construction Uni- and Bi-Directional Versions Available Excellent Clamping Capability Fast Response Time Plastic Material: UL Flammability Classification Rating 94V-0 Case: SMA, Transfer Molded Epoxy Terminals: Solderable per MIL-STD-202, Method 208 Polarity Indicator: Cathode Band (Note: Bi-directional devices have no polarity indicator.) Marking: Date Code and Marking Code See Page 2 Weight: 0.064 grams (approx.)

MSCSM120HM50CT3AG 单片式 SiC MOSFET 电源模块数据手册说明书

MSCSM120HM50CT3AGDatasheet Full Bridge SiC MOSFET Power ModuleJanuary2020ContentsRevision History (1)1.1Revision 1.0 (1)Product Overview (2)2.1Features..............................................................................................................................................................32.2Benefits...............................................................................................................................................................32.3Applications.. (3)Electrical Specifications (4)3.1SiC MOSFET Characteristics (Per MOSFET).........................................................................................................43.2Reverse SiC Diode Ratings and Characteristics (Per SiC Diode)..........................................................................63.3Thermal and Package Characteristics.................................................................................................................63.4Typical SiC MOSFET Performance Curves...........................................................................................................83.5Typical SiC Diode Performance Curves. (11)Package Specifications (12)4.1Package Outline Drawing (12)Contents1Revision HistoryThe revision history describes the changes that were implemented in the document.The changes are listed by revision,starting with the most current publication.1.1Revision 1.0Revision 1.0was published in January 2020.It is the first publication of this document.Revision HistoryThe MSCSM120HM50CT3AG device is a full bridge1200V/55A full Silicon Carbide(SiC)power module.Figure1•MSCSM120HM50CT3AG Electrical SchematicFigure2•MSCSM120HM50CT3AG Pinout LocationAll ratings at T J=25°C,unless otherwise specified.Caution:These devices are sensitive to electrostatic discharge.Proper handling procedures should befollowed.2.1FeaturesThe following are key features of the MSCSM120HM50CT3AG device:•SiC Power MOSFET◦Low R DS(on)◦High temperature performance•SiC Schottky Diode◦Zero reverse recovery◦Zero forward recovery◦Temperature independent switching behavior◦Positive temperature coefficient on VF•Very low stray inductance•Internal thermistor for temperature monitoring•Aluminum nitride(AlN)substrate for improved thermal performance 2.2BenefitsThe following are benefits of the MSCSM120HM50CT3AG device:•High power and efficiency converters and inverters•Outstanding performance at high frequency operation•Direct mounting to heatsink(isolated package)•Low junction-to-case thermal resistance•Solderable terminals for power and signal,for easy PCB mounting•Low profile•RoHS compliant2.3ApplicationsThe MSCSM120HM50CT3AG device is designed for the following applications:•Uninterruptible power supplies•Switched mode power supplies•EV motor and traction drive•Welding converters3Electrical SpecificationsThis section shows the electrical specifications of the MSCSM120HM50CT3AG device.3.1SiC MOSFET Characteristics (Per MOSFET)The following table shows the absolute maximum ratings per MOSFET of the MSCSM120HM50CT3AG device.Table 1•Absolute Maximum RatingsUnit Max Ratings ParameterSymbol V 1200Drain-source voltage V DSS A55T C =25°C Continuous drain currentI D44T C =80°C110Pulsed drain current I DM V –10/25Gate-source voltage V GS mΩ50Drain source ON resistance R DSon W 245T C =25°CPower dissipationP DThe following table shows the electrical characteristics per MOSFET of the MSCSM120HM50CT3AG device.Table 2•Electrical CharacteristicsUnit Max Typ MinTest Conditions CharacteristicSymbol µA 10010V GS =0V;V DS =1200V Zero gate voltage drain current I DSS mΩ5040T J =25°C V GS =20V I D =40ADrain-source on resistanceR DS(on)64T J =175°CV 2.71.8V GS =V DS ,I D =1mA Gate threshold voltage V GS(th)nA150V GS =20V,V DS =0VGate-source leakage currentI GSSThe following table shows the dynamic characteristics per MOSFET of the MSCSM120HM50CT3AG device.Table 3•Dynamic CharacteristicsUnit MaxTyp MinTest Conditions Characteristic Symbol pF1990V GS =0V V DS =1000V Input capacitance C iss 156Output capacitance C oss f =1MHz17Reverse transfer capacitance C rss nC137V GS =–5V/20V V Bus =800V Total gate charge Q g 29Gate–source charge Q gs I D =40A 31Gate–drain charge Q gd ns 30V GS =–5V/20V V Bus =600V Turn-on delay time T d(on)30Rise time T r I D =40A50Turn-off delay time T d(off)R Gon =10Ω;R Goff =5.8Ω25Fall time T f mJ 0.79T J =150°C Inductive switching V GS =–5V/20V Turn on energy E on mJ 0.53T J =150°CTurn off energyE offV Bus =600V I D =40A R Gon =10ΩR Goff =5.8ΩΩ1.2Internal gate resistanceR Gint °C/W0.61Junction-to-case thermal resistanceR thJCThe following table shows the body diode ratings and characteristics per MOSFET of the MSCSM120HM31CT3AG device.Table 4•Body Diode Ratings and CharacteristicsUnit MaxTyp MinTest Conditions Characteristic Symbol V 5.4V GS =0V ;I SD =40A Diode Forward Voltage V SD ns 31I SD =40A;V GS =–5V V R =800V;d iF /dt =1800A/μsReverse recovery time t rr nC 610Reverse recovery charge Q rr A40Reverse recovery currentI rr3.2Reverse SiC Diode Ratings and Characteristics(Per SiC Diode)The following table shows the reverse SiC diode ratings and characteristics per SiC diode of theMSCSM120HM50CT3AG device.Table5•Reverse SiC Diode Ratings and Characteristics(Per SiC Diode)CharacteristicSymbolTest ConditionsTypMaxMinUnit V RRMV Peak repetitive reverse voltage1200Reverse leakage currentI RMV R=1200VT J=25°CμA2001050T J=175°CAI FDC forward current15T C=100°CI F=15AV FDiode forward voltageV1.81.5T J=25°C2T J=175°CQcTotal capacitive chargenCV R=600V73Total capacitanceCpF80f=1MHz,V R=400V59f=1MHz,V R=800VR thJC1.55Junction-to-case thermal resistance°C/W 3.3Thermal and Package CharacteristicsThe following table shows the package characteristics of the MSCSM120HM50CT3AG device.Table6•Package CharacteristicsMaxUnit SymbolCharacteristicMinV ISOLV RMS isolation voltage,any terminal to case t=1min,50Hz/60Hz4000Operating junction temperature rangeT J–40°C175Recommended junction temperature under switching conditionsT JOP–40T Jmax–25 T STGStorage temperature range–40125 T COperating case temperature–40125To heatsinkTorqueMounting torqueN.mM432Wtg110Package weightThe following table shows the temperature sensor NTC(see application note APT0406on )of the MSCSM120HM50CT3AG device.Table7•Temperature Sensor NTCSymbolCharacteristicTypMaxMinUnit Resistance at25°CR2550kΩ∆R25/R255% B25/85T25=298.15K3952K∆B/BT C=100°C4%3.4Typical SiC MOSFET Performance CurvesThis sections shows the typical SiC MOSFET performance curves of the MSCSM120HM50CT3AG device.Figure3•Maximum Thermal ImpedanceFigure4•Output Characteristics,T J=25°CFigure6•Normalized R DS(on)vs.TemperatureFigure8•Switching Energy vs.Rg Figure9•Switching Energy vs.CurrentFigure10•Capacitance vs.Drain Source VoltageFigure12•Body Diode Characteristics,T J=25°C°CFigure16•Operating Frequency vs.Drain Current3.5Typical SiC Diode Performance CurvesThis sections shows the typical SiC diode performance curves of the MSCSM120HM50CT3AG device.Figure17•Maximum Thermal ImpedanceFigure18•Forward CharacteristicsThis section shows the package specification of the MSCSM120HM50CT3AG device.4.1Package Outline DrawingThe following figure illustrates the package outline of the MSCSM120HM50CT3AG device.The dimensionsare in millimeters.Figure20•Package Outline DrawingMicrosemi's product warranty is set forth in Microsemi's Sales Order Terms and rmation contained in this publication is provided for the sole purpose of designing with and using Microsemi rmation regarding device applications and the like is provided only for your convenience and may be superseded by updates.Buyer shall not rely on any data and performance specifications or parameters provided by Microsemi.It is your responsibility to ensure that your application meets with your specifications.THIS INFORMATION IS PROVIDED "AS IS."MICROSEMI MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED,WRITTEN OR ORAL,STATUTORY OR OTHERWISE,RELATED TO THE INFORMATION,INCLUDING BUT NOT LIMITED TO ITS CONDITION,QUALITY ,PERFORMANCE,NON-INFRINGEMENT,MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE.IN NO EVENT WILL MICROSEMI BE LIABLE FOR ANY INDIRECT,SPECIAL,PUNITIVE,INCIDENTAL OR CONSEQUENTIAL LOSS,DAMAGE,COST OR EXPENSE WHATSOEVER RELATED TO THIS INFORMATION OR ITS USE,HOWEVER CAUSED,EVEN IF MICROSEMI HAS BEEN ADVISED OF THE POSSIBILITY OR THE DAMAGES ARE FORESEEABLE.TO THE FULLEST EXTENT ALLOWED BY LAW,MICROSEMI’S TOTAL LIABILITY ON ALL CLAIMS IN RELATED TO THIS INFORMATION OR ITS USE WILL NOT EXCEED THE AMOUNT OF FEES,IF ANY ,YOU PAID DIRECTLY TO MICROSEMI FOR THIS e of Microsemi devices in life support,mission-critical equipment or applications,and/or safety applications is entirely at the buyer’s risk,and the buyer agrees to defend and indemnify Microsemi from any and all damages,claims,suits,or expenses resulting from such use.No licenses are conveyed,implicitly or otherwise,under any Microsemi intellectual property rights unless otherwisestated.Microsemi2355W.Chandler Blvd.Chandler,AZ 85224USAWithin the USA:+1(480)792-7200Fax:+1(480)792-7277 ©2020Microsemi andits corporate affiliates.All rights reserved.Microsemi and the Microsemi logo aretrademarks of Microsemi Corporation and itscorporate affiliates.All other trademarks andservice marks are the property of theirrespective owners.Microsemi Corporation,a subsidiary of Microchip Technology Inc.(Nasdaq:MCHP),and its corporate affiliates are leading providers of smart,connected and secure embedded control solutions.Their easy-to-use development tools and comprehensive product portfolio enable customers to create optimal designs which reduce risk while lowering total system cost and time to market.These solutions serve more than 120,000customers across the industrial,automotive,consumer,aerospace and defense,communications and computing markets.Headquartered in Chandler,Arizona,the company offers outstanding technical support along with dependable delivery and quality.Learn more at .MSCC-0344-DS-01071-1.0-0120Legal。