FYS-5012ABXX-XX中文资料

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FOSAN富信电子二级管 B5817WS-B5819WS-产品规格书

安徽富信半导体科技有限公司ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.B5817WS-B5819WS SOD-323Schottky Barrier Rectifier Diode肖特基势垒整流二极管■Features特点Low forward voltage drop低正向压降High current capability高电流能力Surface mount device表面贴装器件Case封装:SOD-323■Maximum Rating最大额定值(T A=25℃unless otherWSise noted如无特殊说明，温度为25℃)Characteristic特性参数Symbol符号B5817WS B5818WS B5819WS Unit单位Device Marking产品印字SJ SK SLPeak Reverse Voltage反向峰值电压V RRM203040VDC Reverse Voltage直流反向电压V R203040V RMS Reverse Voltage反向电压均方根值V R(RMS)142128V ForWSard Rectified Current正向整流电流I F1A Peak Surge Current峰值浪涌电流I FSM9A Repetitive Peak Surge Current重复峰值浪涌电流I FRM 1.5A PoWSer Dissipation耗散功率P D250mW Thermal Resistance J-A结到环境热阻RθJA500℃/W Junction/Storage Temperature结温/储藏温度T J,T stg-50to+150℃℃■Electrical Characteristics电特性(T A=25℃unless otherWSise noted如无特殊说明，温度为25℃)Characteristic特性参数Symbol符号B5817WS B5818WS B5819WS Unit单位Condition条件Reverse Voltage反向电压V R203040V I R=1mAForWSard Voltage正向电压V F 0.450.750.550.8750.60.9VI F=1AI F=3AReverse Current反向电流I R1mA V R=V RRM Diode Capacitance二极管电容C T120pF V R=4V,f=1MHz安徽富信半导体科技有限公司ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.B5817WS-B5819WS ■Typical Characteristic Curve典型特性曲线■Dimension外形封装尺寸SOD-323。

SWPA5012S100MT 绕线功率电感规格书

APPLICATIONS
z LED Lighting z Next-generation mobile devices with multifunction such as mobile TV and digital movie cameras z Flat-screen TVs, blue-ray disc recorders, set top box z Notebooks, desktop computers, servers, graphic cards z Portable gaming devices, personal navigation systems, personal multimedia devices z Automotive systems z Telecomm base stations
4030
4.0×4.0×3.0
5012
5.0×5.0×1.2
5020
5.0×5.0×2.0
5040
5.0×5.0×4.0
6010
6.0×6.0×1.0
6012
6.0×6.0×1.2
6020
6.0×6.0×2.0
6028
6.0×6.0×2.8
6040
6.0×6.0×4.0
6045
6.0×6.0×4.5
A
B
C
D
E
F
a Typ. b Typ. c Typ.
SWPA252010S Fig.1 2.5±0.1 2.0±0.1 1.0 Max. 1.5±0.2 0.80±0.2 0.80±0.2 0.80 0.85 2.0
SWPA252012S Fig.1 2.5±0.1 2.0±0.1 1.2 Max. 1.5±0.2 0.80±0.2 0.80±0.2 0.80 0.85 2.0

R5013ANXFU6;中文规格书,Datasheet资料

TransistorsRev.A 1/510V Drive Nch MOSFETR5013ANXz StructureSilicon N-channel MOSFETz Features1) Low on-resistance. 2) Fast switching speed.3) Wide SOA (safe operating area). 4) Gate-source voltage (V GSS ) guaranteed to be r 30V . 5) Drive circuits can be simple. 6) Parallel use is easy .z Applications Switchingz Dimensions (Unit : mm)z Packaging specificationszPackage CodeBasic ordering unit (pieces)−500Bulk R5013ANXTypez Absolute maximum ratings (T a=25q C)ParameterRange of storage temperatureChannel temperature Total power dissipation (Tc=25°C)Drain current Gate-source voltage Drain-source voltage V DSS V GSSP D Tch 500V V A W °C ±30±13I D I DP Continuous Pulsed A ±5250150Tstg°C−55 to +150Avalanche EnergyAvalanche Current I AS 13E AS 46Symbol Limits Unit ∗1 Pw ≤10μs, Duty cycle ≤1%∗2 L 500μH, V DD =50V, R G =25Ω, Starting, Tch =25°C ∗3 Limited only by maximum tempterature allowed∗1∗3∗3I S A I SP A A mJ Continuous Pulsed1352Source current (Body Diode)∗1∗2∗2z Thermal resistanceParameter°C/WRth(ch-c)Symbol Limits Unit Channel to case2.5TransistorsRev.A 2/5z Electrical characteristics (T a=25q C)z Body diode characteristics (Source-drain)(T a=25q C)V SD −− 1.5V I S = 13A, V GS =0VForward voltage∗ PulsedParameterSymbol Min.Typ.Max.Unit Conditions∗TransistorsRev.A 3/5z Electrical characteristic curves051015201020304050Fig.2: Typical Output Characteristics(㸇)0.0010.010.11101000.01.5 3.0 4.5 6.0Fig.4 Typical Transfer Characteristics0.010.11100.1110100Fig.6 Static Drain-Source On-StateResistance vs. Drain Current00.20.40.60.8151015Fig.7 Static Drain-Source On-State Resistance vs. Gate Source0.010.11101000.010.1110100Fig.9 Forward Transfer Admittance vs. Drain Current0.010.11101000.11101001000Fig.1 Maximum Safe Operating AeraFig.3: Typical Output Characteristics(㸈)246810012345Fig.8 Static Drain-Source On-State Resistance vs. Channel00.20.40.60.81-50050100150Fig.5 Gate Threshold Voltagevs. Channel0123456-50050100150DRAIN-SOURCE VOLTAGE : VDS ( V )D R A I N C U R R E N T : I D (A )DRAIN-SOURCE VOLTAGE: VDS (V)D R A I N C U R R E N T : I D (A )DRAIN-SOURCE VOLTAGE: V DS (V)D R A I N C U R R E N T : I D (A )DRAIN CURRENT : I D (A)S T A T I C D R A I N -S O U R C E O N -S T A T E R E S I S T A N C E : R D S (o n ) (ȍ)CHANNEL TEMPERATURE: T ch (°C)G A T E T H R E S H O L D V O L T A G E : V G S (t h ) (V )GATE-SOURCE VOLTAGE : V GS (V)D R A I N C U R R E N T : I D (A )GATE-SOURCE VOLTAGE : V GS (V)S T A T I C D R A I N -S O U R C E O N -S T A T E R E S I S T A N C E : R D S (o n ) (ȍ)CHANNEL TEMPERATURE: T ch (°C)DRAIN CURRENT : I D (A)F O R W A R D T R A N S F E R A D M I T T A N C E : |Y f s | (S )TransistorsRev.A 4/50.00010.0010.010.110.00010.0010.010.111010010001010010000.1110100Fig.13 Reverse Recovery Time vs.Reverse Drain Current0.010.11101000.511.5Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage0510151020304050Fig.12 Dynamic Input Characteristics1101001000100000.010.11101001000Fig.11 Typical Capacitance vs. Drain-Source Voltage1101001000100000.010.1110100Fig.14 Switching 䇭CharacteristicsFig.15 Normalized Transient Thermal Resistance vs. Pulse WidthTOTAL GATE CHARGE : Q g (nC)G A T E -S O U R C E V O L T A G E : V G S (V )DRAIN-SOURCE VOLTAGE : V DS (V)C A P A C I T A N C E : C (p F )SOURCE-DRAIN VOLTAGE : V SD (V)R E V E R S E D R A I N C U R R E N T : I D R (A )REVERSE DRAIN CURRENT : I DR (A)R E V E R S E R E C O V E R Y T I M E : t r r (n s )DRAIN CURRENT : I D (A)S W I T C H I N G T I M E : t (n s )PULSE WIDTH : Pw(s)N O R M A R I Z E D T R A N S I E N T T H E R M A L R E S I S T A N C E : r (t )TransistorsRev.A 5/5z Switching characteristics measurement circuitFig.1 Switching time measurement circuit !Fig.2 Switching waveformsFig.3 Gate charge measurement circuit !Fig.4 Gate charge waveformFig.5 Avalanche measurement circuitFig.6 Avalanche waveformI G (Const.)Appendix1-Rev2.0Thank you for your accessing to ROHM product informations.More detail product informations and catalogs are available, please contact your nearest sales office.ROHM Customer Support SystemTHE AMERICAS / EUROPE / ASIA / JAPANContact us : webmaster@rohm.co.jpCopyright © 2008 ROHM CO.,LTD.21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, JapanTEL : +81-75-311-2121FAX : +81-75-315-0172Appendix分销商库存信息: ROHMR5013ANXFU6。

恒电流二极管2DHMxxx、2DHLxxx系列产品

恒电流二极管2DHMxxx、2DHLxxx 系列产品恒电流二极管（CRD ）是一种能为LED 或其他器件在电源电压变化时提供恒定电流的二端半导体器件, 它相当于一个大电流的恒流源或最大峰值电流限制电路，即使出现电源电压供应不稳定或是负载电阻变化很大的情况,都能确保供电电流恒定。

该器件具有外围电路非常简单、使用及其方便等特点，尤其适用于LED 照明、LCD 背光、汽车电子、通信电路、手持设备、仪器仪表和微型机器等场合。

■ 电气特性z 直流等效阻抗低； z 低电压启动； z 交流等效阻抗高； z 负温度系数；z 符合RoHS环保指令； Fig.1 恒电流二极管电路标示图 ■ 典型应用z LED驱动、LCD背光调节； z 手持设备、数码产品的恒流； z 通信设备、仪器仪表、微型机器； z 汽车电子；■ 产品系列、主要电气参数 (Ta=25℃，除非别有规定)参数测试标准：I H ---- 恒定电流值，测试条件：V V S 5=；V K ---- 起始恒流电压，测试条件：测试电流 H K I I 8.0=； Z D ---- 动态阻抗，测试条件：V V S 10=； V R ---- 反向耐压，测试条件：nA I R 50=；K C ---- 控制电流比，测试条件：H P C I I K /=；时对应的电流是电压为E P V I ； T r ---- 脉冲上升时间； T f ---- 脉冲下降时间； I R ---- 反向漏电流 50nA；■产品系列、封装、最大额定值：说明：1. 最大功耗P max 随型号、封装规格、散热条件会有所改变。

2. 工作温度范围：-30～+150 ℃3. 存储温度：-40～+150 ℃4. 焊接温度：260 ℃ 5．不带整流特性■ 测试电路Fig.2 恒电流二极管测试电路原理图 ■ 特性曲线Fig.3 恒电流二极管典型伏安特性曲线Fig.4 恒电流二极管典型温度特性曲线■ 典型应用电路Fig.5 单只恒电流二极管LED恒流电路Fig.6 多只恒电流二极管并联LED恒流电路* 对于直接用交流电输入的电路可在输入端的串联无极性分压电容（电容量的大小0.68μf/400v— 3.3μf/400v,视LED 的负载多少而定），由两个耐高压二极管(1N4007)和恒流二极管组成的双向恒流电路，直接驱动交流LED(双向LED)。

FOSAN富信电子二级管 SD103AW-产品规格书

安徽富信半导体科技有限公司ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.SD103AW SOD-123Schottky Barrier Rectifier Diode肖特基势垒整流二极管■Features特点Low forward voltage drop低正向压降High current capability高电流能力Surface mount device表面贴装器件Case封装:SOD-123Marking印字：S4■Maximum Rating最大额定值(T A=25℃unless otherwise noted如无特殊说明，温度为25℃)Characteristic特性参数Symbol符号Rating额定值Unit单位Peak Reverse Voltage反向峰值电压V RRM40VDC Reverse Voltage直流反向电压V R40V RMS Reverse Voltage反向电压均方根值V R(RMS)21V Forward Rectified Current正向整流电流I F0.35A Peak Surge Current峰值浪涌电流I FSM2A Power Dissipation耗散功率P D310mW Thermal Resistance J-A结到环境热阻RθJA400℃/W Junction/Storage Temperature结温/储藏温度T J,T stg-50to+150℃℃■Electrical Characteristics电特性(T A=25℃unless otherwise noted如无特殊说明，温度为25℃)Characteristic 特性参数Symbol符号Min最小值Type典型值Max最大值Unit单位Condition条件Reverse Voltage反向电压V R40V I R=1mA Forward Voltage正向电压V F0.6V I F=0.2AReverse Current反向电流I R 0.058mAV R=40V(25℃)(100℃)Diode Capacitance二极管电容C T20pF V R=4V,f=1MHzANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.SD103AW ■Typical Characteristic Curve典型特性曲线ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.SD103AW ■Dimension外形封装尺寸。

T8XX-XXXH中文资料

®1/11Table 1: Main FeaturesDESCRIPTIONAvailable either in through-hole or surface-mount packages, the BTA08, BTB08 and T8 triac series is suitable for general purpose AC switching. They can be used as an ON/OFF function in applica-tions such as static relays, heating regulation, in-duction motor starting circuits... or for phase control operation in light dimmers, motor speed controllers,...The snubberless versions (BTA/BTB...W and T8series) are specially recommended for use on inductive loads, thanks to their high commutation performances.Logic level versions are designed to interface directly with low power drivers such as microcontrollers.By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at 2500V RMS ) complying with UL standards (file ref.:E81734).Symbol Value Unit I T(RMS)8A V DRM /V RRM 600 and 800V I GT (Q 1)5 to 50mABTA08, BTB08 and T8 Series8A TRIAC SREV. 6February 2006SNUBBERLESS™, LOGIC LEVEL & STANDARDTable 2: Order CodesPart Number Marking BTA08-xxxxxRG See page table 8 onpage 10BTB08-xxxxxRG T8xx-xxxG T8xx-xxxH T8xx-xxxBBTA08, BTB08 and T8 Series2/11Table 3: Absolute Maximum Ratings Tables 4: Electrical Characteristics (T j = 25°C, unless otherwise specified)■SNUBBERLESS and Logic Level (3 quadrants)Symbol ParameterValue Unit I T(RMS)RMS on-state current (full sine wave)IPAK/D 2PAK/DPAK/TO-220AB T c = 110°C 8ATO-220AB Ins.T c = 100°C I TSM Non repetitive surge peak on-state current (full cycle, T j initial = 25°C) F = 50 Hz t = 20 ms 80A F = 60 Hz t = 16.7 ms84I ²t I ²t Value for fusingt p = 10 ms 36A ²s dI/dt Critical rate of rise of on-state cur-rent I G = 2 x I GT , t r ≤ 100 ns F = 120 Hz T j = 125°C 50A/µs I GM Peak gate currentt p = 20 µsT j = 125°C 4A P G(AV)Average gate power dissipation T j = 125°C1W T stg T jStorage junction temperature rangeOperating junction temperature range- 40 to + 150- 40 to + 125°CSymbol Test ConditionsQuad-rantT8BTA08 / BTB08Unit T810T835TW SW CW BW I GT (1)V D = 12 V R L = 30 ΩI - II -III MAX.10355103550mA V GT I - II - III MAX.1.3V V GD V D = V DRM R L = 3.3 k ΩT j = 125°C I - II - IIIMIN.0.2V I H (2)I T = 100 mA MAX.153510153550mA I L I G = 1.2 I GTI - III MAX.255010255070mAII306015306080dV/dt (2)V D = 67 %V DRM gate open T j = 125°CMIN.4040020404001000V/µs (dI/dt)c (2)(dV/dt)c = 0.1 V/µs T j = 125°CMIN.5.4- 3.5 5.4--A/ms(dV/dt)c = 10 V/µs T j = 125°C2.8- 1.5 2.98--Without snubber T j = 125°C- 4.5-- 4.57BTA08, BTB08 and T8 Series3/11■Standard (4 quadrants)Table 5: Static Characteristics Table 6: Thermal resistance Symbol Test ConditionsQuadrant BTA08 / BTB08Unit C B I GT (1)V D = 12 V R L = 30 ΩI - II - III IV MAX.255050100mA V GT ALL MAX. 1.3V V GD V D = V DRM R L = 3.3 k Ω T j = 125°C ALLMIN.0.2V I H (2)I T = 500 mA MAX.2550mA I L I G = 1.2 I GTI - III - IVMAX.4050mA II80100dV/dt (2)V D = 67 %V DRM gate open T j = 125°CMIN.200400V/µs (dV/dt)c (2)(dI/dt)c = 5.3 A/ms T j = 125°C MIN.510V/µsSymbol Test ConditionsValueUnit V T (2)I TM = 11 A t p = 380 µs T j = 25°C MAX. 1.55V V to (2)Threshold voltage T j = 125°C MAX.0.85V R d (2)Dynamic resistance T j = 125°C MAX.50m ΩI DRM I RRMV DRM = V RRMT j = 25°C MAX.5µA T j = 125°C1mANote 1: minimum I GT is guaranted at 5% of I GT max.Note 2: for both polarities of A2 referenced to A1.Symbol ParameterValue Unit R th(j-c)Junction to case (AC)IPAK / D 2PAK / DPAK / TO-220AB 1.6°C/WTO-220AB Insulated 2.5R th(j-a)Junction to ambientS = 1 cm ²D 2PAK 45°C/WS = 0.5 cm ²DPAK70TO-220AB / TO-220AB Insulated 60IPAK100S = Copper surface under tab.BTA08, BTB08 and T8 Series4/11Figure 1: Maximum power dissipation versus RMS on-state current (full cycle)Figure 2: RMS on-state current versus case temperature (full cycle)Figure 3: RMS on-state current versus ambient temperature (printed circuit board FR4, copper thickness: 35µm) (full cycle)Figure 4: Relative variation of thermal impedance versus pulse durationFigure 5: On-state characteristics (maximum values)Figure 6: Surge peak on-state current versus number of cyclesBTA08, BTB08 and T8 Series5/11Figure 7: Non-repetitive surge peak on-state current for a sinusoidal pulse with width t p < 10 ms and corresponding value of I 2tFigure 8: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values)Figure 9: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values) (Snubberless & L ogic level types)Figure 10: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values) (Standard types)Figure 11: Relative variation of critical rate of decrease of main current versus junction temperatureFigure 12: DPAK and D 2P AK Thermal resistance junction to ambient versus copper surface under tab (printed circuit board FR4, copper thickness:35µm)BTA08, BTB08 and T8 Series6/11Figure 13: Ordering Information Scheme (BTA08 and BTB08 series)Figure 14: Ordering Information Scheme (T8 series)Table 7: Product SelectorPart NumberVoltage (xxx)Sensitivity Type Package 600 V 800 V BTA/BTB08-xxxB X X 50 mA Standard TO-220AB BTA/BTB08-xxxBW X X 50 mA Snubberless TO-220AB BTA/BTB08-xxxC X X 25 mAStandard TO-220AB BTA/BTB08-xxxCW X X 35 mA Snubberless TO-220AB BTA/BTB08-xxxSW X X 10 mA Logic level TO-220AB BTA/BTB08-xxxTW X X 5 mA Logic Level TO-220AB T810-xxxG X X 10 mA Logic Level D2PAK T810-xxxH X X 10 mA Logic Level IPAK T835-xxxB X X 35 mA Snubberless DPAK T835-xxxG X X 35 mA Snubberless D 2PAK T835-xxxHXX35 mASnubberlessIPAKBTB: non insulated TO-220AB packageBTA08, BTB08 and T8 Series Figure 15: D2PAK Package Mechanical DataFigure 16: D2PAK Foot Print Dimensions(in millimeters)7/11BTA08, BTB08 and T8 SeriesFigure 17: DPAK Package Mechanical DataFigure 18: DPAK Foot Print Dimensions (in millimeters)8/11BTA08, BTB08 and T8 Series9/11BTA08, BTB08 and T8 Series10/11In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: .Table 8: Ordering InformationOrdering type Marking Package Weight Base qtyDelivery modeBTA/BTB08-xxxyzRGBTA/BTB08-xxxyzTO-220AB 2.3 g 50Tube T8yy-xxxG T8yyxx D 2PAK 1.5 g 50Tube T8yy-xxxG-TR T8yyxx 1000Tape & reel T8yy-xxxB T8yyxx DPAK 0.3 g 75Tube T8yy-xxxB-TR T8yyxx 2500Tape & reel T8yy-xxxHT8yyxxIPAK0.4 g75TubeNote: xxx = voltage, yy = sensitivity, z = typeTable 9: Revision HistoryDate Revision Description of ChangesApr-20025A Last update.13-Feb-20066TO-220AB delivery mode changed from bulk to tube.ECOPACK statement added.元器件交易网BTA08, BTB08 and T8 Series Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequencesof use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is grantedby implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subjectto change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are notauthorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a registered trademark of STMicroelectronics.All other names are the property of their respective owners© 2006 STMicroelectronics - All rights reservedSTMicroelectronics group of companiesAustralia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America11/11。

FOSAN富信电子二级管 LL4148-产品规格书

安徽富信半导体科技有限公司ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.LL4148LL-34High Speed Switching Diode 高速开关二极管▉Features 特点Characteristic 特性参数Symbol 符号Value 额定值Unit 单位Forward Current 正向电流I F 200mA Peak Forward Surge Current 峰值正向浪涌电流I FSM 500@1S 1000@1mS 4000@1µSmA Reverse Voltage 反向电压V R 75V Peak Reverse V oltage 峰值反向电压V RM 100V Power dissipation 耗散功率P D 500(Ta=25℃)mWJunction and Storage Temperature 结温和储藏温度T J ,T stg-65to+175℃■Electrical Characteristics 电特性(TA =25℃unless otherwise noted 如无特殊说明，温度为25℃)Characteristic 特性参数Symbol 符号Min 最小值Max 最大值Unit 单位Reverse Breakdown Voltage 反向击穿电压(I R =100uA)V (BR)100—VReverse Leakage Current 反向漏电流(V R =20V)(V R =75V)(V R =20V ，T J =150℃)I R —25550nA µA µA Forward V oltage 正向电压(I F =10mA)V F —1V Diode Capacitance 二极管电容(V R =0V,f=1MHz)C D—4pF Reverse Recovery Time 反向恢复时间T rr—4nSANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.LL4148■Typical Characteristic Curve典型特性曲线Figure1:Forward Characteristics Figure2:Leakage CurrentFigure3:Capacitance Characteristics Figure4：Power Derating CurveANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.LL4148■Dimension外形封装尺寸。

双壁波纹管产品完整规格型号及产品对应生产执行标准

米
T/CECS 10011-2019
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高分子量高密度聚乙烯（HMWHDPE）双 DN200 SN8 壁波纹管高分子量高密度聚乙烯（HMWHDPE）双 DN300 SN8 壁波纹管高分子量高密度聚乙烯（HMWHDPE）双 DN400 SN8 壁波纹管高分子量高密度聚乙烯（HMWHDPE）双 DN500 SN8 壁波纹管高分子量高密度聚乙烯（HMWHDPE）双 DN600 SN8 壁波纹管埋地排水用聚乙烯共混聚氯乙烯双壁波纹 ID 200 SN8 管材埋地排水用聚乙烯共混聚氯乙烯双壁波纹 ID 300 SN8 管材埋地排水用聚乙烯共混聚氯乙烯双壁波纹 ID 400 SN8 管材埋地排水用聚乙烯共混聚氯乙烯双壁波纹 ID 500 SN8 管材
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增强聚丙烯FRPP双壁加筋波纹管

AQY282S中文资料

60 V 0.35 (0.5) A 1.05 A
( ): in case of using only 1 channel 100 ms (1 shot), VL = DC
Power dissipation Total power dissipation I/O isolatiom voltage Operating temperature Storage temperature
AC/DC type
1,000 pcs.
* Indicate the peak AC and DC values. Notes: (1) Tape package is the standard style. Also available in tube. (Part No. sufﬁx “X” or “Z” is not needed when ordering; Tube: 50 pcs.; Case: 1,000 pcs.) (2) For space reasons, the package type indicator “X” and “Z” are omitted from the seal.
Power dissipation Total power dissipation I/O isolatiom voltage Operating temperature Storage temperature
300 mW 350 mW 1,500 V AC –40°C to +85°C –40°F to +185°F –40°C to +100°C –40°F to +212°F
4.3 .169 4.4 .173 2.1 .083
PhotoMOS RELAYS

12#煤六采区SQ无极绳绞车电机铭牌2

12#煤六采区材料巷无极绳绞车技术参数
SQ-80型无极绳绞车电机铭牌
型号：YBPT315S-4W 110KW 660/1140V 防爆Ex di
F级三角/星形接 13.5/65.5AA 1100Kg
出厂日期：2010年1月 1487r/min 50Hz
出厂编号:09k1080-01 防爆合格证编号：OJEX07.495X
标准编号：Q10EE158-2009 安全标志号：MAIO70669
减速器铭牌
型号：DBYK280 输入转速：无出厂编号：100227
隔爆型三相异步电动机（风叶电机）
型号：YBZ802-4 额定电压：660/1140 50HZ
额定功率：0.75KW 额定电流：1408A 转速：1325r/min
接法：三角/星形接COS￠0.77KW
标准编号：Q/OEE155-2009Q 绝缘等级：1级 40℃
防爆合格证：CJEX08.487x 29Kg 生产日期：2011年2月
隔爆型电力液压推动器
型号：BED201/6 行程：60 安全标志：ＭCK090027
电压：600/1140V 防爆合格证号：2092/015 电流：0.75/0.45A 额定推力：2000 频率：50HZ 额定推力：2000
功率：375W 重量：68Kg 防护等级：P54 绝缘等级：F
编号：S2011010/VT1。

FOSAN富信电子二级管 ES2AB-ES2JB-产品规格书

安徽富信半导体科技有限公司ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.ES2A-ES2JSMB Super Fast Recovery Diode超快恢复二极管■Features 特点Fast Switching Speed 快的开关速度Super Fast Recovery time 超快恢复时间Glass passivated chip junction 玻璃钝化芯片保护结Surface Mount Device 表面贴装器件Case 封装:SMB■Maximum Rating 最大额定值(T A =25℃unless otherwise noted 如无特殊说明，温度为25℃)Characteristic 特性参数Symbol 符号ES 2A ES 2B ES 2C ES 2D ES 2E ES 2G ES 2J Unit 单位Repetitive Peak Reverse Voltage 重复峰值反向电压V RRM 50100150200300400600V DC Reverse Voltage 直流反向电压V R 50100150200300400600V RMS Reverse Voltage 反向电压均方根值V R(RMS)3570105140210280420V Forward Rectified Current 正向整流电流I F 2A Peak Surge Current 峰值浪涌电流I FSM 60AThermal Resistance J-A 结到环境热阻R θJA 60℃/WJunction/Storage Temperature 结温/储藏温度T J,T stg-50to+150℃■Electrical Characteristics 电特性(T A =25℃unless otherwise noted 如无特殊说明，温度为25℃)Characteristic 特性参数Symbol 符号ES2A-ES2DES2E-ES2GES2J Unit 单位Condition 条件Forward Voltage 正向电压V F 11.251.68V I F =1A Reverse Current 反向电流I R 5(T A =25℃)100(T A =125℃)µA V R =V RRM Reverse Recovery Time 反向恢复时间Trr 35nS I F =0.5A,I R =1A Irr=0.25A Junction Capacitance 结电容C J40pFV R =4V,f=1MHzANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.ES2A-ES2J ■Typical Characteristic Curve典型特性曲线ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.ES2A-ES2J ■Dimension外形封装尺寸。

FOSAN富信电子二极管 RB521S-30-产品规格书

安徽富信半导体科技有限公司ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.RB521S-30SOD-523Schottky Barrier Diode 肖特基势垒二极管▉Internal Configuration&DeviceMarking 内部结构与产品打标Type 型号RB521S-30Pin 管脚Mark 打标▉AbsoluteMaximum Ratings 最大额定值Characteristic 特性参数Symbol 符号Rat 额定值Unit 单位DC Reverse Voltage 直流反向电压V R 30Forward Work Current 正向工作电流I O 200mA Peak Forward Surge Current 正向峰值浪涌电流I FSM1000mA Power dissipation 耗散功率P D (Ta=25℃)150mW Thermal Resistance J-A 结到环境热阻R θJA 668℃/W Junction and Storage Temperature 结温和储藏温度T J ,T stg-55to+125℃■Electrical Characteristics 电特性(T A =25℃unless otherwise noted 如无特殊说明，温度为25℃)Characteristic 特性参数Symbol 符号Min 最小值Max 最大值Unit 单位Reverse Breakdown Voltage 反向击穿电压(I R =100µA)V (BR)30—V Reverse Leakage Current 反向漏电流(V R =10V)I R —30µA Forward V oltage(I F =10mA)正向电压(I F =200mA)V F—0.350.5VANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.RB521S-30■Typical Characteristic Curve典型特性曲线ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.RB521S-30■Dimension外形封装尺寸。

EN50128_中文版

同济大学、铁道科学研究院标准所
EN50128：2001
EN 50128 : 2001
铁路应用——通信、信号和处理系统——铁路控制和防护系统软件
2007.6
1
同济大学、铁道科学研序言
本欧洲标准是SC 9XA,即通信，信号传输和处理系统技术委员会（CENELEC TC 9X）制订，铁路电气和电子应用的标准。草案文本作为EN 50128正式提交投票并于2000-11-01获得CENELEC批准。修改了下列日期 --欧盟各国必须通过认可或发布相同的国家标准来执行本欧洲标准的截止日期 --与本欧洲标准冲突的国家标准必须被废止的截止日期
4
同济大学、铁道科学研究院标准所
与期望的设计相背离，并有可能导致未预料到的系统行为或失效。 3.9 失效（failure）与规定的系统行为相背离。失效是系统错误或故障的结果。 3.10 故障（fault）一种能导致系统错误或失效的不正常情形，故障可以是系统性或随机性的。 3.11 避错（fault avoidance）在系统设计和构造的过程中使用避免引入故障的设计技术。 3.12 容错（fault tolerance）在出现有限数量的软硬件故障的情况下，系统能继续提供正确的规定服务的内嵌能力 3.13 固件（firmware）指令和存储在一个功能独立主存储器（通常是ROM）中的相关数据的有序集合 3.14 通用软件（generic software）通用软件是只要提供应用相关的数据就可以应用于多种系统装置的软件。 3.15 实现人员（implementer）由设计主管机构委派、具体实现特定设计的一个或更多人员 3.16 产品（product）
3）开发生命周期每一阶段的验证； 4） 5） 6） 7）验证后的模块和模块库；清晰的文档；可审计的文档；确认测试。

FOSAN富信电子二级管 MMBD4448-产品规格书

安徽富信半导体科技有限公司ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.MMBD4448SOT-23Switching Diode 开关二极管▉Internal Configuration内部结构▉Features 特点Characteristic 特性参数Symbol 符号Max 最大值Unit 单位Power dissipation 耗散功率P D (Ta=25℃)350mW Forward Current 正向电流I F 250mA Reverse Voltage 反向电压V R 75VJunction and Storage Temperature 结温和储藏温度T J ,T stg-55to+150℃■DeviceMarking 产品打标MMBD4448=KA3■Electrical Characteristics 电特性(TA =25℃unless otherwise noted 如无特殊说明，温度为25℃)Characteristic 特性参数Symbol 符号Min 最小值Max 最大值Unit 单位Reverse Breakdown Voltage 反向击穿电压(I R =100uA)V (BR)75—V Reverse Leakage Current(V R =20V)反向漏电流(V R =75V)I R—252.5nA µA Forward V oltage(I F =1mA)正向电压(I F =10mA)(I F =50mA)(I F =150mA)V F —0.7150.8551.01.25VDiode Capacitance 二极管电容(V R =0V,f=1MHz)C T—2pF Reverse Recovery Time 反向恢复时间T rr—4nSANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.MMBD4448■Typical Characteristic Curve典型特性曲线Figure1:Forward Characteristics Figure2:Leakage CurrentFigure3:Capacitance Characteristics Figure4：Power Derating CurveANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.MMBD4448■Dimension外形封装尺寸Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.900 1.1500.0350.045A10.0000.1000.0000.004A20.900 1.0500.0350.041b 0.3000.5000.0120.020c 0.0800.1500.0030.006D 2.800 3.0000.1100.118E 1.200 1.4000.0500.055E1 2.2502.5500.0890.100e 0.950TYP0.037TYPe1 1.8002.0000.0710.079L 0.550REF0.022REFL10.3000.5000.0120.020θ0o8o 0o8o。

FOSAN富信电子二极管 RS2ABF-RS2MBF-产品规格书

安徽富信半导体科技有限公司ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.RS2ABF-RS2MBFSMBF Fast Recovery Diode快恢复二极管■Features 特点Built-in strain relief 内应力释放Fast Recovery time 快恢复时间Surface mount device 表面贴装器件Case 封装:SMBF■Maximum Rating 最大额定值(T A =25℃unless otherwise noted 如无特殊说明，温度为25℃)Characteristic 特性参数Symbol 符号RS2ABF RS2BBF RS2DBF RS2GBF RS2JBF RS2KBF RS2MBF Unit 单位Repetitive Peak Reverse Voltage 重复峰值反向电压V RRM 501002004006008001000V DC Reverse Voltage 直流反向电压V R 501002004006008001000V RMS Reverse Voltage 反向电压均方根值V R(RMS)3570140280420560700V Forward Rectified Current 正向整流电流I F 2A Peak Surge Current 峰值浪涌电流I FSM 60AThermal Resistance J-A 结到环境热阻R θJA 16℃/WJunction/Storage Temperature 结温/储藏温度T J,T stg-50to+150℃℃■Electrical Characteristics 电特性(T A =25℃unless otherwise noted 如无特殊说明，温度为25℃)Characteristic 特性参数Symbol 符号RS2ABF-RS2GBFRS2JBFRS2KBF-RS2MBFUnit 单位Condition 条件Forward Voltage 正向电压V F 1.3V I F =2A Reverse Current 反向电流I R 5(T A =25℃)300(T A =125℃)µAV R =V RRM Reverse Recovery Time 反向恢复时间Trr 150250500nS I F =0.5A,I R =1A Irr=0.25A Junction Capacitance 结电容C J50pFV R =4V,f=1MHzANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.RS2ABF-RS2MBF ■Typical Characteristic Curve典型特性曲线ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.RS2ABF-RS2MBF ■Dimension外形封装尺寸。

FOSAN富信电子二级管 1SS355-产品规格书

安徽富信半导体科技有限公司ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.1SS355 SOD-323Switching Diode开关二极管■Features特点Fast Switching Speed快的开关速度Surface mount device表面贴装器件High Conductance高电导率Case封装:SOD-323Marking印字：A■Maximum Rating最大额定值(T A=25℃unless otherwise noted如无特殊说明，温度为25℃)Characteristic特性参数Symbol符号Rating额定值Unit单位Non-Repetitive Peak Reverse Voltage不重复反向峰值电压V RM90VDC Reverse Voltage直流反向电压V R80V Forward Rectified Output Current正向工作电流I O100mA Non-Repetitive Peak Surge Current不重复峰值浪涌电流I FSM225mA Power Dissipation耗散功率P D200mW Thermal Resistance Junction-Ambient结到环境热阻RθJA625℃/W Junction/Storage Temperature结温/储藏温度T J,T stg-50to+150℃℃■Electrical Characteristics电特性(T A=25℃unless otherwise noted如无特殊说明，温度为25℃)Characteristic特性参数Symbol符号Min最小值Max最大值Unit单位Condition条件Reverse Voltage反向电压V R80V I R=1µA Forward Voltage正向电压V F 1.2V I F=100mA Reverse Current反向电流I R0.1µA V R=80V Recovery Time反向恢复时间Trr4nS V R=6V Junction Capacitance结电容C J3pF V R=0.5V安徽富信半导体科技有限公司ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.1SS355■Typical Characteristic Curve典型特性曲线■Dimension外形封装尺寸。

FOSAN富信电子二级管 A1-A7-SOD123FL-产品规格书

安徽富信半导体科技有限公司ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.A1-A7-SOD123FLSOD123FL General Purpose Rectifier Diode通用整流二极管■Features 特点Low forward voltage drop 低正向压降Low reverse leakage current 低反向漏电流High surge current capability 高浪涌电流能力Surface mount device 表面贴装器件Case 封装:SOD123FL■Maximum Rating 最大额定值(T A =25℃unless otherwise noted 如无特殊说明，温度为25℃)Characteristic 特性参数Symbol 符号A1A2A3A4A5A6A7Unit 单位Peak Reverse Voltage 反向峰值电压V RRM 501002004006008001000V DC Reverse Voltage 直流反向电压V R 501002004006008001000V RMS Reverse Voltage 反向电压均方根值V R(RMS)3570140280420560700V Forward Rectified Current 正向整流电流I F 1A Peak Surge Current 峰值浪涌电流I FSM 25A Thermal Resistance J-A 结到环境热阻R θJA 80℃/WJunction and Storage Temperature 结温和储藏温度T J ,T stg150℃,-55to+150℃■Electrical Characteristics 电特性(T A =25℃unless otherwise noted 如无特殊说明，温度为25℃)Characteristic 特性参数Symbol 符号Min 最小值Typ 典型值Max 最大值Unit 单位Test Condition 测试条件Forward Voltage 正向电压V F 1.01.1V I F =1A Reverse Current(T A =25℃/)反向电流(T A =100℃/)I R 550uA V R =V RRM Diode Capacitance 二极管电容C D15pFV R =4V,f=1MHzANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.A1-A7-SOD123FL ■Typical Characteristic Curve典型特性曲线Figure1:Forward Characteristics Figure2:Reverse CharacteristicsFigure3:Surge Current Characteristics Figure4:Junction CapacitanceFigure5:Forward Current DeratingANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.A1-A7-SOD123FL ■Dimension外形封装尺寸。

FOSAN富信电子二级管 US5AB-US5MB-产品规格书

安徽富信半导体科技有限公司ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.US5A-US5MSMB Super Fast Recovery Diode特快恢复二极管■Features 特点High current capability 高电流能力Low forward voltage drop 低正向压降Super Fast Recovery time 特快恢复时间Surface mount device 表面贴装器件Case 封装:SMB■Maximum Rating 最大额定值(T A =25℃unless otherwise noted 如无特殊说明，温度为25℃)Characteristic 特性参数Symbol 符号US 5A US 5B US 5D US 5G US 5J US 5K US 5M Unit 单位Repetitive Peak Reverse Voltage 重复峰值反向电压V RRM 501002004006008001000V DC Reverse Voltage 直流反向电压V R 501002004006008001000V RMS Reverse Voltage 反向电压均方根值V R(RMS)3570140280420560700V Forward Rectified Current 正向整流电流I F 5A Peak Surge Current 峰值浪涌电流I FSM 120AThermal Resistance J-A 结到环境热阻R θJA 35℃/WJunction/Storage Temperature 结温/储藏温度T J,T stg-50to+150℃℃■Electrical Characteristics 电特性(T A =25℃unless otherwise noted 如无特殊说明，温度为25℃)Characteristic 特性参数Symbol 符号US5A-US5DUS5G US5J-US5MUnit 单位Condition 条件Forward Voltage 正向电压V F 1.01.3 1.7V I F =5A Reverse Current 反向电流I R 10(T A =25℃)200(T A =100℃)µA V R =V RRM Reverse Recovery Time 反向恢复时间Trr 5075nS I F =0.5A,I R =1A Irr=0.25A Junction Capacitance 结电容C J75pFV R =4V,f=1MHzANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.US5A-US5M ■Typical Characteristic Curve典型特性曲线ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.US5A-US5M ■Dimension外形封装尺寸。

FOSAN富信电子二级管 F1A-F1M-产品规格书

安徽富信半导体科技有限公司ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.F1A-F1MSOD-123FL Fast Recovery Diode快恢复二极管■Features 特点Built-in strain relief 内应力释放Fast Recovery time 快恢复时间Surface mount device 表面贴装器件Case 封装:SOD-123FL■Maximum Rating 最大额定值(T A =25℃unless otherwise noted 如无特殊说明，温度为25℃)Characteristic 特性参数Symbol 符号F1A F1B F1D F1G F1J F1K F1M Unit 单位Repetitive Peak Reverse Voltage 重复峰值反向电压V RRM 501002004006008001000V DC Reverse Voltage 直流反向电压V R 501002004006008001000V RMS Reverse Voltage 反向电压均方根值V R(RMS)3570140280420560700V Forward Rectified Current 正向整流电流I F 1A Peak Surge Current 峰值浪涌电流I FSM 30AThermal Resistance J-A 结到环境热阻R θJA 80℃/WJunction/Storage Temperature 结温/储藏温度T J,T stg-50to+150℃℃■Electrical Characteristics 电特性(T A =25℃unless otherwise noted 如无特殊说明，温度为25℃)Characteristic 特性参数Symbol 符号F1A-F1GF1JF1K-F1MUnit 单位Condition 条件Forward Voltage 正向电压V F 1.3V I F =1A Reverse Current 反向电流I R 5(T A =25℃)100(T A =100℃)µA V R =V RRM Reverse Recovery Time 反向恢复时间Trr 150250500nS I F =0.5A,I R =1A Irr=0.25A Junction Capacitance 结电容C J15pFV R =4V ,f=1MHzANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.F1A-F1M ■Typical Characteristic Curve典型特性曲线ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.F1A-F1M ■Dimension外形封装尺寸SOD-123FL。

FYS-5012ABXX-XX中文资料

FOSAN富信电子 二级管 B5817WS-B5819WS-产品规格书

SWPA5012S100MT 绕线功率电感规格书

R5013ANXFU6;中文规格书,Datasheet资料

恒电流二极管2DHMxxx、2DHLxxx系列产品

FOSAN富信电子 二级管 SD103AW-产品规格书

T8XX-XXXH中文资料

FOSAN富信电子 二级管 LL4148-产品规格书

双壁波纹管产品完整规格型号及产品对应生产执行标准

AQY282S中文资料

12#煤六采区SQ无极绳绞车电机铭牌2

FOSAN富信电子 二级管 ES2AB-ES2JB-产品规格书

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EN50128_中文版

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