IRLR120N中文资料

V(BR)DSS
∆V(BR)DSS/∆TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
10
100
A
100
V D S , D rain-to-S ource V oltage (V )
V D S , D rain-to-S ource V oltage (V )
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
** When mounted on 1" square PCB (FR-4 or G-10 Material ) . For recommended footprint and soldering techniques refer to application note #AN-994
2

D
VDSS = 100V
G S
RDS(on) = 0.185Ω ID = 10A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 ) VDD = 25V, starting TJ = 25°C, L = 4.7mH RG = 25Ω, IAS = 6.0A. (See Figure 12) TJ ≤ 175°C
元器件交易网
PD - 91541B
IRLR/U120N
HEXFET® Power MOSFET
l l l l l
Surface Mount (IRLR120N) Straight Lead (IRLU120N) Advanced Process Technology Fast Switching Fully Avalanche Rated
100
VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP
10
2.5V
1
1
2.5V
0.1 0.1 1
20µ s P U LS E W ID TH T J = 25°C
10
A
0.1 0.1 1
20µ s P U LS E W ID TH T J = 175°C
元器件交易网
IRLR/U120N
100
ID , D rain-to-S ource C urrent (A )
10
ID , D rain-to-S ource C urrent (A )
VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP
2.0
1.5
1
1.0
0.5
0.1
VDS = 5 0V 2 0 µ s P U L S E W ID T H
2 4 6 8 10
A
0.0 -60 -40 -20 0 20 40 60 80
100
3.0
R D S (on ) , D rain-to-S ource O n R esistance (N orm alized)
I D = 10A
I D , D ra in -to-S o urc e C urren t (A )
T J = 2 5 °C
10
2.5
T J = 1 7 5 °C
Typ.
––– ––– –––
Max.
3.1 50 110
Units
°C/W

1
5/11/98
元器件交易网
IRLR/U120N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss
Min. 100 ––– ––– ––– ––– 1.0 3.1 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
Typ. ––– 0.12 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 4.0 35 23 22
Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 0.185 VGS = 10V, ID = 6.0A 0.225 W VGS = 5.0V, ID = 6.0A 0.265 VGS = 4.0V, ID = 5.0A 2.0 V VDS = VGS, ID = 250µA ––– S VDS = 25V, ID = 6.0A 25 VDS = 100V, VGS = 0V µA 250 VDS = 80V, VGS = 0V, TJ = 150°C 100 VGS = 16V nA -100 VGS = -16V 20 ID = 6.0A 4.6 nC VDS = 80V 10 VGS = 5.0V, See Fig. 6 and 13 ––– VDD = 50V ––– ID = 6.0A ns ––– RG = 11Ω, VGS = 5.0V ––– RD = 8.2Ω, See Fig. 10 Between lead, 4.5 ––– nH 6mm (0.25in.) G from package 7.5 ––– and center of die contact 440 ––– VGS = 0V 97 ––– pF VDS = 25V 50 ––– ƒ = 1.0MHz, See Fig. 5
Min. Typ. Max. Units
Conditions D MOSFET symbol 10 ––– ––– showing the A G integral reverse ––– ––– 35 p-n junction diode. S ––– ––– 1.3 V TJ = 25°C, IS = 6.0A, VGS = 0V ––– 110 160 ns TJ = 25°C, IF =6.0A ––– 410 620 nC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr ton Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
D -P A K T O -2 52 A A