SI3441BDV-T1-E3中文资料

Si3441BDVVishay SiliconixDocument Number: 72028S-40424—Rev. C, 15-Mar-041P-Channel 2.5-V (G-S) MOSFETPRODUCT SUMMARYV DS (V)r DS(on) (W )I D(A)0.090 @ V GS = −4.5 V −2.9−200.130 @ V GS = −2.5 V−2.45(4) S(3) GP-Channel MOSFETTSOP-6Top ViewOrdering Information:Si3441BDV -T1Si3441BDV -T1—E3 (Lead Free)Marking Code:B1xxxABSOLUTE MAXIMUM RATINGS (T A = 25_C UNLESS OTHERWISE NOTED)ParameterSymbol5 secs Steady StateUnitDrain-Source Voltage V DS −20Gate-Source VoltageV GS "8VT A = 25_C −2.9−2.45Continuous Drain Current (T J = 150_C)a T A = 70_CI D −2.35−1.95Pulsed Drain CurrentI DM −16AContinuous Diode Current (Diode Conduction)a I S −1.0−0.72T A = 25_C 1.250.86Maximum Power Dissipation aT A = 70_C P D 0.80.55W Operating Junction and Storage Temperature RangeT J , T stg−55 to 150_CTHERMAL RESISTANCE RATINGSParameterSymbol TypicalMaximumUnitM iJ ti t A bi t t v 5 sec 80100Maximum Junction-to-Ambient a Steady State R thJA 120145_Maximum Junction-to-Foot (Drain)Steady StateR thJF7085C/WNotesa.Surface Mounted on 1” x 1” FR4 Board.For SPICE model information via the Worldwide Web: http://www. /www/product/spice.htm.Si3441BDVVishay Siliconix2Document Number: 72028S-40424—Rev. C, 15-Mar-04SPECIFICATIONS (T J = 25_C UNLESS OTHERWISE NOTED)ParameterSymbol Test Condition Min Typ Max UnitStaticGate Threshold Voltage V GS(th)V DS = V GS , I D = −250 m A −0.45−0.85V Gate-Body LeakageI GSS V DS = 0 V, V GS = "8 V"100nA V DS = −20 V, V GS = 0 V −1Zero Gate Voltage Drain Current I DSS V DS = −20 V, V GS = 0 V, T J = 70_C−5m AOn State Drain Current D()V DS = −5 V, V GS = −4.5 V −10On-State Drain Current aI D(on)V DS = −5 V, V GS = −2.5 V −4ADrain Source On State Resistance DS()V GS = −4.5 V, I D = −3.3 A 0.0700.090Drain-Source On-State Resistance a r DS(on)V GS = −2.5 V, I D = −2.9 A 0.0980.130W Forward Transconductance a g fs V DS = −10 V, I D = −3.3 A 8.0S Diode Forward Voltage aV SDI S = −1.6 A, V GS = 0 V−0.8−1.2VDynamic bTotal Gate Charge Q g 5.28.0Gate-Source Charge Q gs V DS = −10 V, V GS = −4.5 V, I D = −3.3 A0.8nCGate-Drain Charge Q gd 1.5Turn-On Delay Time t d(on)1525Rise Timet r V 5585Turn-Off Delay Time t d(off)DD = −10 V, R L = 10 WI D ^ −1.0 A, V GEN = −4.5 V, R g = 6 W 3045nsFall Timet f 4060Source-Drain Reverse Recovery Timet rrI F = −1.6 A, di/dt = 100 A/m s 5080Notesa.Pulse test; pulse width v 300 m s, duty cycle v 2%.b.Guaranteed by design, not subject to production testing.TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)0481216200.00.5 1.0 1.5 2.0 2.5 3.0 3.5 4.012345V DS − Drain-to-Source Voltage (V)− D r a i n C u r r e n t (A )I D V GS − Gate-to-Source Voltage (V)− D r a i n C u r r e n t (A )I DSi3441BDVVishay SiliconixDocument Number: 72028S-40424—Rev. C, 15-Mar-0430.00.20.40.60.81.01.21.41.6481216200.60.70.80.91.01.11.21.31.41.5−50−25025507510012515001234512345648121620V DS − Drain-to-Source Voltage (V)I D − Drain Current (A)Gate Charge− G a t e -t o -S o u r c e V o l t a g e (V )Q g − Total Gate Charge (nC)V G S On-Resistance vs. Junction TemperatureT J − Junction Temperature (_C)0.000.060.120.180.240.301234520101Source-Drain Diode Forward Voltage− O n -R e s i s t a n c e (r D S (o n )W )V SD − Source-to-Drain Voltage (V)V GS − Gate-to-Source Voltage (V)− S o u r c e C u r r e n t (A )I S r D S (o n ) − O n -R e s i i s t a n c e (N o r m a l i z e d ) 4Document Number: 72028 S-40424—Rev. C, 15-Mar-04100600Si3441BDVVishay SiliconixDocument Number: 72028S-40424—Rev. C, 15-Mar-045TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)10−310−211010−110−4210.10.01Normalized Thermal Transient Impedance, Junction-to-FootSquare Wave Pulse Duration (sec)N o r m a l i z e d E f f e c t i v e T r a n s i e n t T h e r m a l I m p e d a n c eDocument Number: 91000Revision: 18-Jul-081DisclaimerLegal Disclaimer NoticeVishayAll product specifications and data are subject to change without notice.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.Product names and markings noted herein may be trademarks of their respective owners.元器件交易网。