2SA1358O中文资料

Tstg
−55 to 150
°C
JEITA
―
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-8H1A
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
−1000 −800
IC – VBE
Common emitter VCE = −5 V
−600 −400 −200
Tc = 100°C 25
−25
0
0
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2
Base-emitter voltage VBE (V)
12
(1) 10
PC – Ta
(1) Tc = Ta Infinite heat sink (2) No heat sink
―
240
― −0.40 −1.0
V
― −0.77 −1.0
V
― 120 ― MHz
―
30
―
pF
Lot No.
A1358
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
Characteristics indicator Part No. (or abbreviation code)
VCE (sat) – IC
−3
Common emitter IC/IB = 10 −1
−0.5 −0.3
Tc = 100°C
−25
−0.1
−0.05
−0.03 −3
25
−10
−30
−100
−300
Collector current IC (mA)
−1000
Collector current IC (mA)
DC current gain hFE
2SA1358
1000 500 300
100 50 30
−3
hFE – IC
Common emitter VCE = −5 V
Tc = 100°C 25
−25
−10
−30
−100
−300
Collector current IC (mA)
−1000
Collector-emitter saturation voltage VCE (sat) (V)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−120
V
Collector-emitter voltage
VCEO
−120
V
Emitter-base voltage
DC current gain
Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance
ICBO
VCB = −120 V, IE = 0
IEBO
VEBO
−5
V
Collector current
IC
−1
A
Base current
IB
−100
mA
Collector power dissipation
Ta = 25°C Tc = 25°C
PC
1.5 W
10
Junction temperature
Tj
150
°C
JEDEC
―
Storage temperature range
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
8
6
4 2 (2)
0 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
Collector current IC (mA)
Safe Operating Area
−3000 IC max (pulsed)*
IC max (continuous)
• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.
temperature.
−10 −3
−10
−30
VCEO max
−100
−300
Collector-emitter voltage VCE (V)
3
2006-11-09
Collector power dissipation PC (W)
2SA1358
RESTRICTIONS ON PRODUCT USE
Cob
VCB = −10 V, IE = 0, f = 1 MHz
Note: hFE classification O: 80 to 160, Y: 120 to 240
Marking
2SA1358
Min Typ. Max Unit
―
― −100 nA
―
― −100 nA
−120 ―
―
V
−5
―
―
V
80ห้องสมุดไป่ตู้
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1358