W3EG7264S265JD3中文资料

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64位 66MHz双通道Alt OS宽带Ultra3 SCSI适配器说明书

64位 66MHz双通道Alt OS宽带Ultra3 SCSI适配器说明书

Performance
Designed as to be as flexible as HP's legendary servers, the HP StorageWorks SCSI adapter family provides support for up to 28 SCSI devices, while only taking up a single PCI slot. HP adapters deliver exceptional system performance, along with up to two separate Wide Ultra3 SCSI channels that each provide up to 64-bit/66-MHz bus-master capabilities, transferring data as fast as 160 MB/s between storage subsystem and system memory.
Option Kit Contents
Adapter Installation Guide Warranty Card Support Software CD
Warranty
Maximum: The remaining warranty of the HP product in which it is installed (to a maximum three-year limited warranty) Minimum: One-year, on-site limited warranty NOTE: Certain restrictions and exclusions apply. Consult the Customer Support Center at 1-800-345-1518 for details.

W3EG7234S265JD3资料

W3EG7234S265JD3资料

White Electronic DesignsW3EG7234S-D3-JD3-AJD3PRELIMINARY*256MB - 32Mx72 DDR SDRAM REGISTERED, w/PLLDESCRIPTIONThe W3EG7234S is a 32Mx72 Double Data Rate SDRAM memory module based on 128Mb DDRSDRAM component. The module consists of eighteen 32Mx4 DDR SDRAMs in 66 pin TSOP package mounted on a 184 Pin FR4 substrate.Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges and Burst Lenths allow thesame device to be useful for a variety of high bandwidth, high performance memory system applications.* T his product is under development, is not qualifi ed or characterized and is subject to change without notice.FEATURESDouble-data-rate architecture Clock speeds: 100MHz and 133MHz Bi-directional data strobes (DQS) Differential clock inputs (CK & CK#) Programmable Read Latency 2,2,5 (clock) Programmable Burst Length (2,4,8)Programmable Burst type (sequential & interleave) Edge aligned data output, center aligned data input Auto and self refresh Serial presence detect Power Supply: 2.5V ± 0.20VJEDEC standard 184 pin DIMM package•Package height options: JD3: 30.48mm (1.20") AJD3: 28.70mm (1.13")OPERATING FREQUENCIESDDR266 @CL=2DDR266 @CL=2.5DDR200 @CL=2Clock Speed 133MHz 133MHz 100MHz CL-t RCD -t RP2-2-22.5-3-32-2-2White Electronic DesignsW3EG7234S-D3-JD3-AJD3PRELIMINARYPIN CONFIGURATIONSPIN NAMESA0 – A12Address input (Multiplexed)BA0-BA1Bank Select Address DQ0-DQ63 Data Input/Output CB0-CB7Check bitsDQS0-DQS17Data Strobe Input/Output CK0Clock Input CK0#Clock InputCKE0Clock Enable Input CS0#Chip select Input RAS#Row Address Strobe CAS#Column Address Strobe WE#Write Enable V CC Power SupplyV CCQ Power Supply for DQS V SS GroundV REF Power Supply for Reference V CCSPD Serial EEPROM Power Supply SDA Serial data I/O SCL Serial clockSA0-SA2Address in EEPROM V CCID V CC Identifi cation Flag NCNo Connect RESET#Reset EnablePIN SYMBOL PIN SYMBOL PIN SYMBOL PIN SYMBOL 1V REF 47DQS893V SS 139V SS 2DQ048A094DQ4140DQS173V SS 49CB295DQ5141A104DQ150V SS 96V CCQ 142CB65DQS051CB397DQS9143V CCQ 6DQ252BA198DQ6144CB77V CC 53DQ3299DQ7145V SS 8DQ354V CCQ 100V SS 146DQ369NC 55DQ33101NC 147DQ3710RESET#56DQS4102NC 148V CC 11V SS 57DQ34103NC 149DQS1312DQ858V SS 104V CCQ 150DQ3813DQ959BA0105DQ12151DQ3914DQS160DQ35106DQ13152V SS 15V CCQ 61DQ40107DQS10153DQ4416*CK162V CCQ 108V CC 154RAS#17*CK1#63WE#109DQ14155DQ4518V SS 64DQ41110DQ15156V CCQ 19DQ1065CAS#111*CKE1157CS0#20DQ1166V SS 112V CCQ 158*CS1#21CKE067DQS5113*BA2159DQS1422V CCQ 68DQ42114DQ20160V SS 23DQ1669DQ43115A12161DQ4624DQ1770V CC 116V SS 162DQ4725DQS271*CK2#117DQ21163*CS3#26V SS 72DQ48118A11164V CCQ 27A973DQ49119DQS11165DQ5228DQ1874V SS 120V CC 166DQ5329A775*CK2#121DQ22167A13*30V CCQ 76*CK2122A8168V CC 31DQ1977V CCQ 123DQ23169DQS1532A578DQS6124V SS 170DQ5433DQ2479DQ50125A6171DQ5534V SS 80DQ51126DQ28172V CCQ 35DQ2581V SS 127DQ29173NC 36DQS382V CCID 128V CCQ 174DQ6037A483DQ56129DQS12175DQ6138V CC 84DQ57130A3176V SS 39DQ2685V CC 131DQ30177DQS1640DQ2786DQS7132V SS 178DQ6241A287DQ58133DQ31179DQ6342V SS 88DQ59134CB4180V CCQ 43A189V SS 135CB5181SA044CB090NC 136V CCQ 182SA145CB191SDA 137CK0183SA246V CC92SCL138CK0#184V CCSPD* Not UsedWhite Electronic Designs W3EG7234S-D3-JD3-AJD3PRELIMINARY FUNCTIONAL BLOCK DIAGRAMWhite Electronic Designs W3EG7234S-D3-JD3-AJD3PRELIMINARYABSOLUTE MAXIMUM RATINGSParameter Symbol Value UnitsVoltage on any pin relative to V SS V IN, V OUT-0.5 to 3.6VVoltage on V CC supply relative to V SS V CC, V CCQ-1.0 to 3.6VStorage Temperature T STG-55 to +150°CPower Dissipation P D27WShort Circuit Current I OS50mANote: Permanent device damage may occur if ‘ABSOLUTE MAXIMUM RATINGS’ are exceeded.Functional operation should be restricted to recommended operating condition.Exposure to higher than recommended voltage for extended periods of time could affect device reliabilityDC CHARACTERISTICS0°C ≤ T A≤ 70°C, V CC = 2.5V ± 0.2VParameter Symbol Min Max Unit Supply Voltage V CC 2.3 2.7V Supply Voltage V CCQ 2.3 2.7V Reference Voltage V REF 1.15 1.35V Termination Voltage V TT 1.15 1.35VInput High Voltage V IH V REF + 0.15V CCQ + 0.3VInput Low Voltage V IL-0.3V REF -0.15V Output High Voltage V OH V TT + 0.76—V Output Low Voltage V OL—V TT-0.76VCAPACITANCET A = 25°C. f = 1MHz, V CC = 2.5VParameter Symbol Max UnitInput Capacitance (A0-A12)C IN1 6.25pFInput Capacitance (RAS#,CAS#,WE#)C IN2 6.25pFInput Capacitance (CKE0)C IN3 6.25pFInput Capacitance (CK0#,CK0)C IN4 5.5pFInput Capacitance (CS0#)C IN5 6.25pFInput Capacitance (DQS0-DQS17)C IN613pFInput Capacitance (BA0-BA1)C IN7 6.25pFData input/output capacitance (DQ0-DQ63)(DQS)C OUT13pFData input/output capacitance (CB0-CB7)C OUT13pFWhite Electronic Designs W3EG7234S-D3-JD3-AJD3PRELIMINARYI DD SPECIFICATIONS AND TEST CONDITIONS0°C ≤ T A≤ 70°C, V CCQ = 2.5V ± 0.2V, V CC = 2.5V ± 0.2VIncludes PLL and Register PowerParameter Symbol Rank 1ConditionsDDR266@CL=2MaxDDR266@CL=2.5MaxDDR200@CL=2Max UnitsOperating Current I DD0One device bank; Active - Precharge; t RC= t RC (MIN); t CK = t CK (MIN); DQ,DM andDQS inputs changing once per clock cycle;Address and control inputs changing onceevery two cycles.252023852385mAOperating Current I DD1One device bank; Active-Read-PrechargeBurst = 2; t RC = t RC (MIN); t CK = t CK (MIN);l OUT = 0mA; Address and control inputschanging once per clock cycle.270025202520mAPrecharge Power-Down Standby Current I DD2P All device banks idle; Power-down mode;t CK = t CK (MIN); CKE = (low)545454mAIdle Standby Current I DD2F CS# = High; All device banks idle;t CK = t CK (MIN); CKE = High; Addressand other control inputs changing onceper clock cycle. V IN = V REF for DQ, DQSand DM.112010301030mAActive Power-Down Standby Current I DD3P One device bank active; Power-Downmode; t CK (MIN); CKE = (low)450360360mAActive Standby Current I DD3N CS# = High; CKE = High; One devicebank; Active-Precharge;t RC = t RAS (MAX);t CK = t CK (MIN); DQ, DM and DQS inputschanging twice per clock cycle; Addressand other control inputs changing once perclock cycle.121011201120mAOperating Current I DD4R Burst = 2; Reads; Continuous burst; Onedevice bank active; Address and controlinputs changing once per clock cycle; t CK =t CK (MIN); l OUT = 0mA.274526102610mAOperating Current I DD4W Burst = 2; Writes; Continuous burst; Onedevice bank active; Address and controlinputs changing once per clock cycle;t CK = t CK (MIN); DQ,DM and DQS inputschanging once per clock cycle.270025652565mAAuto Refresh Current I DD5t RC = t RC (MIN)377036803645mA Self Refresh Current I DD6CKE ≤ 0.2V329311346mA Operating Current I DD7A Four bank interleaving Reads (BL=4)with auto precharge with t RC=t RC (MIN);t CK=t CK(MIN); Address and control inputschange only during Active Read or Writecommands.486047704770mAWhite Electronic Designs W3EG7234S-D3-JD3-AJD3PRELIMINARYI DD SPECIFICATIONS AND TEST CONDITIONS0°C ≤ T A≤ 70°C, V CCQ = 2.5V ± 0.2V, V CC = 2.5V ± 0.2VIncludes DDR SDRAM components onlyParameter Symbol Rank 1ConditionsDDR266@CL=2MaxDDR266@CL=2.5MaxDDR200@CL=2Max UnitsOperating Current I DD0One device bank; Active - Precharge; t RC= t RC (MIN); t CK = t CK (MIN); DQ,DM andDQS inputs changing once per clock cycle;Address and control inputs changing onceevery two cycles.193518001800mAOperating Current I DD1One device bank; Active-Read-PrechargeBurst = 2; t RC = t RC (MIN); t CK = t CK (MIN);l OUT = 0mA; Address and control inputschanging once per clock cycle.211519351935mAPrecharge Power-Down Standby Current I DD2P All device banks idle; Power-down mode;t CK = t CK (MIN); CKE = (low)545454mAIdle Standby Current I DD2F CS# = High; All device banks idle;t CK = t CK (MIN); CKE = High; Addressand other control inputs changing onceper clock cycle. V IN = V REF for DQ, DQSand DM.810720720mAActive Power-Down Standby Current I DD3P One device bank active; Power-Downmode; t CK (MIN); CKE = (low)450360360mAActive Standby Current I DD3N CS# = High; CKE = High; One devicebank; Active-Precharge;t RC = t RAS (MAX);t CK = t CK (MIN); DQ, DM and DQS inputschanging twice per clock cycle; Addressand other control inputs changing once perclock cycle.900810810mAOperating Current I DD4R Burst = 2; Reads; Continuous burst; Onedevice bank active; Address and controlinputs changing once per clock cycle; t CK =t CK (MIN); l OUT = 0mA.216020252025mAOperating Current I DD4W Burst = 2; Writes; Continuous burst; Onedevice bank active; Address and controlinputs changing once per clock cycle;t CK = t CK (MIN); DQ,DM and DQS inputschanging once per clock cycle.211519801980mAAuto Refresh Current I DD5t RC = t RC (MIN)315030603060mA Self Refresh Current I DD6CKE ≤ 0.2V543636mA Operating Current I DD7A Four bank interleaving Reads (BL=4)with auto precharge with t RC=t RC (MIN);t CK=t CK(MIN); Address and control inputschange only during Active Read or Writecommands.427541854185mAWhite Electronic Designs W3EG7234S-D3-JD3-AJD3PRELIMINARYI DD1 : OPERATING CURRENT: ONE BANK1. Typical Case: V CC =2.5V, T = 25°C2. Worst Case: V CC = 2.7V, T = 10°C3. Only one bank is accessed with t RC (min), Burst Mode, Address and Control inputs on NOP edge are changing once per clock cycle. l OUT = 0mA4. Timing patterns• DDR200 (100MHz, CL = 2) : t CK = 10ns, CL2, BL =4, t RCD = 2*t CK, t RAg = 5*t CKRead: A0 N R0 N N P0 N A0 N - repeat the sametiming with random address changing; 50% of data changing at every burst• DDR266 (133MHz, CL = 2.5) : t CK = 7.5ns, CL =2.5, BL = 4, t RCD = 3*t CK, t RC = 9*t CK, t RAg = 5*t CKRead: A0 N N R0 N P0 N N N A0 N - repeat thesame timing with random address changing; 50% of data changing at every burst• DDR266 (133MHz, CL = 2) : t CK = 7.5ns, CL = 2, BL = 4, t RCD = 3*t CK, t RC = 9*t CK, t RAg = 5*t CKRead: A0 N N R0 N P0 N N N A0 N - repeat thesame timing with random address changing; 50% of data changing at every burst I DD7A: OPERATING CURRENT: FOUR BANKS1. Typical Case: V CC =2.5V, T = 25°C2. Worst Case: V CC = 2.7V, T = 10°C3. Four banks are being interleaved with t RC (min), Burst Mode, Address and Control inputs on NOP edge are not changing.lout = 0mA4. Timing patterns• DDR200 (100MHz, CL = 2) : t CK = 10ns, CL2,BL = 4, t RRD = 2*t CK, t RCD = 3*t CK, Read withautoprechargeRead: A0 N A1 R0 A2 R1 A3 R2 A0 R3 A1 R0- repeat the same timing with random addresschanging; 100% of data changing at every burst • DDR266 (133MHz, CL = 2.5) : t CK = 7.5ns, CL =2.5, BL = 4, t RRD = 3*t CK, t RCD = 3*t CK Read withautoprechargeRead: A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1R0 - repeat the same timing with random addresschanging; 100% of data changing at every burst • DDR266 (133MHz, CL = 2): t CK = 7.5ns, CL2 = 2,BL = 4, t RRD = 2*t CK, t RCD = 3*t CKRead: A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1R0 - repeat the same timing with random addresschanging; 100% of data changing at every burstDETAILED TEST CONDITIONS FOR DDR SDRAM I DD1 & I DD7A Legend: A = Activate, R = Read, W = Write, P = Precharge, N = NOPA (0-3) = Activate Bank 0-3R (0-3) = Read Bank 0-3White Electronic Designs W3EG7234S-D3-JD3-AJD3PRELIMINARYDDR SDRAM COMPONENT ELECTRICAL CHARACTERISTICS ANDRECOMMENDED AC OPERATING CONDITIONS0°C ≤ T A ≤ +70°C; V CC = +2.5V ±0.2V, V CCQ = +2.5V ±0.2VAC Characteristics262/265202Parameter Symbol Min Max Min Max Units Notes Access window of DQs from CK, CK#t AC-0.75+0.75-0.8+0.8nsCK high-level width t CH0.450.550.450.55t CK16CK low-level width t CL0.450.550.450.55t CK16 Clock cycle time CL=2.5t CK (2.5)7.513813ns22CL=2t CK (2)7.5/10131013ns22DQ and DM input hold time relative to DQS t DH0.50.6ns14,17 DQ and DM input setup time relative to DQS t DS0.50.6ns14,17 DQ and DM input pulse width (for each input)t DIPW 1.752ns17 Access window of DQS from CK, CK#t DQSCK-0.75+0.75-0.8+0.8nsDQS input high pulse width t DQSH0.350.35t CKDQS input low pulse width t DQSL0.350.35t CKDQS-DQ skew, DQS to last DQ valid, per group, per access t DQSQ0.50.6ns13,14 Write command to fi rst DQS latching transition t DQSS0.75 1.250.75 1.25t CKDQS falling edge to CK rising - setup time t DSS0.20.2t CKDQS falling edge from CK rising - hold time t DSH0.20.2t CKHalf clock period t HP t CH, t CL t CH, t CL ns18 Data-out high-impedance window from CK, CK#t HZ+0.75+0.8ns8,19 Data-out low-impedance window from CK, CK#t LZ-0.75-0.8ns8,20 Address and control input hold time (fast slew rate)t IHf0.90 1.1ns6 Address and control input set-up time (fast slew rate)t ISf0.90 1.1ns6 Address and control input hold time (slow slew rate)t IHs1 1.1ns6 Address and control input setup time (slow slew rate)t ISs1 1.1ns6 Address and control input pulse width (for each input)t IPW 2.2 2.2nsLOAD MODE REGISTER command cycle time t MRD1516nsDQ-DQS hold, DQS to fi rst DQ to go non-valid, per access t QH t HP-t QHS t HP-t QHS ns13,14 Data hold skew factor t QHS0.751nsACTIVE to PRECHARGE command t RAS40120,00040120,000ns15 ACTIVE to READ with Auto precharge command t RAP1520nsACTIVE to ACTIVE/AUTO REFRESH command period t RC6070nsAUTO REFRESH command period t RFC7580ns21White Electronic Designs W3EG7234S-D3-JD3-AJD3PRELIMINARYDDR SDRAM COMPONENT ELECTRICAL CHARACTERISTICS ANDRECOMMENDED AC OPERATING CONDITIONS (continued)0°C ≤ T A ≤ +70°C; V CC = +2.5V ±0.2V, V CCQ = +2.5V ±0.2VAC Characteristics262/265202Parameter Symbol Min Max Min Max Units Notes ACTIVE to READ or WRITE delay t RCD1520nsPRECHARGE command period t RP1520nsDQS read preamble t RPRE0.9 1.10.9 1.1t CK19 DQS read postamble t RPST0.40.60.40.6t CKACTIVE bank a to ACTIVE bank b command t RRD1215nsDQS write preamble t WPRE0.250.25t CKDQS write preamble setup time t WPRES00ns10,11 DQS write postamble t WPST0.40.60.40.6t CK9 Write recovery time t WR1515nsInternal WRITE to READ command delay t WTR11t CKData valid output window NA t QH-t DQSQ t QH-t DQSQ ns13 REFRESH to REFRESH command interval t REFC140.6140.6μs12 Average periodic refresh interval t REFI15.615.6μs12 Terminating voltage delay to V CC t VTD00nsExit SELF REFRESH to non-READ command t XSNR7580nsExit SELF REFRESH to READ command t XSRD200200t CKWhite Electronic DesignsW3EG7234S-D3-JD3-AJD3PRELIMINARY11. It is recommended that DQS be valid (HIGH or LOW) on or beforethe WRITE command. The case shown (DQS going from High-Z to logic LOW) applies when no WRITEs were previously in progress on the bus. If a previous WRITE was in progress, DQS could be high during this time, depending on t DQSS .12. The refresh period is 64ms. This equates to an average refreshrate of 15.625µs. However, an AUTO REFRESH command must be asserted at least once every 140.6µs; burst refreshing orposting by the DRAM controller greater than eight refresh cycles is not allowed.13. The valid data window is derived by achieving other specifi cations- t HP (t CK/2), t DQSQ , and t QH (t QH = t HP - t QHS ). The data valid window derates directly proportional with the clock duty cycle and a practical data valid window can be derived. The clock is allowed a maximum duty cycled variation of 45/55. Functionality is uncertain when operating beyond a 45/55 ratio. The data valid window derating curves are provided below for duty cycles ranging between 50/50 and 45/55.14. Referenced to each output group: x4 = DQS with DQ0-DQ3.15. READs and WRITEs with auto precharge are not allowed to beissued until t RAS (MIN) can be satisfi ed prior to the internal precharge command being issued.16. JEDEC specifi es CK and CK# input slew rate must be > 1V/ns(2V/ns differentially).17. DQ and DM input slew rates must not deviate from DQS by morethan 10%. If the DQ/DM/DQS slew rate is less than 0.5V/ns, timing must be derated: 50ps must be added to t DS and t DH for each 100mV/ns reduction in slew rate. If slew rates exceed 4V/ns, functionality is uncertain.18. t HP min is the lesser of t CL min and t CH min actually applied to thedevice CK and CK# inputs, collectively during bank active.19. t HZ (MAX) will prevail over the t DQSCK (MAX) + t RPST (MAX)condition. t LZ (MIN) will prevail over t DQSCK (MIN) + PRE (MAX) condition.20. For slew rates greater than 1V/ns the (LZ) transition will start about310ps earlier.21. CKE must be active (High) during the entire time a refreshcommand is executed. That is, from the time the AUTO REFRESH command is registered, CKE must be active at each rising clock edge, until t RFC has been satisfi ed.22. Whenever the operating frequency is altered, not including jitter, the DLL is required to be reset. This is followed by 200 clock cycles (before READ commands).Notes1.All voltages referenced to V SS2. Tests for AC timing, I DD , and electrical AC and DC characteristicsmay be conducted at normal reference / supply voltage levels, but the related specifi cations and device operations are guaranteed for the full voltage range specifi ed.3.Outputs are measured with equivalent load:Output (V OUT )4.AC timing and I DD tests may use a V IL -to-V IH swing of up to 1.5V in the test environment, but input timing is still referenced to V REF (or to the crossing point for CK/CK#), and parameter specifi cations are guaranteed for the specifi ed AC input levels under normal use conditions. The minimum slew rate for the input signals used to test the device is 1V/ns in the range between V IL (AC) and V IH (AC).5.The AC and DC input level specifi cations are defi ned in the SSTL_2 standard (i.e., the receiver will effectively switch as a result of the signal crossing the AC input level, and will remain in that state as long as the signal does not ring back above [below] the DC input LOW [high] level).6.For slew rates less than 1V/ns and greater than or equal to 0.5V/ns. If the slew rate is less than 0.5V/ns, timing must be derated: t IS has an additional 50ps per each 100mV/ns reduction in slew rate from the 500mV/ns. t IH has 0ps added, that is, it remains constant. If the slew rate exceeds 4.5V/ns, functionality is uncertain. For 403 and 335, slew rates must be greater than or equal to 0.5V/ns.7.Inputs are not recognized as valid until V REF stabilizes. Exception: during the period before V REF stabilizes, CKE ≤ 0.3 x V CCQ is recognized as LOW.8. t HZ and t LZ transitions occur in the same access time windows asvalid data transitions. These parameters are not referenced to a specifi c voltage level, but specify when the device output is no longer driving (HZ) and begins driving (LZ).9.The intent of the “Don’t Care” state after completion of thepostamble is the DQS-driven signal should either be HIGH, LOW, or high-Z, and that any signal transition within the input switching region must follow valid input requirements. That is, if DQS transitions HIGH (above V IHDC (MIN) then it must not transition LOW (below V IHDC ) prior to t DQSH (MIN).10. This is not a device limit. The device will operate with a negativevalue, but system performance could be degraded due to bus turnaround.White Electronic Designs W3EG7234S-D3-JD3-AJD3PRELIMINARYORDERING INFORMATION FOR JD3Part Number Speed CAS Latency t RCD t RP Height*W3EG7234S262JD3133MHz/266Mb/s22230.48 (1.20")W3EG7234S265JD3133MHz/266Mb/s 2.53330.48 (1.20")W3EG7234S202JD3100MHz/200Mb/s22230.48 (1.20")PACKAGE DIMENSIONS FOR JD3White Electronic DesignsW3EG7234S-D3-JD3-AJD3PRELIMINARYORDERING INFORMATION FOR AJD3Part Number Speed CAS Latencyt RCD t RP Height*W3EG7234S262AJD3133MHz/266Mb/s 22228.70 (1.13")W3EG7234S265AJD3133MHz/266Mb/s 2.53328.70 (1.13")W3EG7234S202AJD3100MHz/200Mb/s22228.70 (1.13")PACKAGE DIMENSIONS FOR AJD3* ALL DIMENSIONS ARE IN MILLIMETERS AND (INCHES).White Electronic DesignsW3EG7234S-D3-JD3-AJD3PRELIMINARYORDERING INFORMATION FOR D3Part Number Speed CAS Latencyt RCD t RP Height*W3EG7234S262D3133MHz/266Mb/s 22228.58 (1.125")W3EG7234S265D3133MHz/266Mb/s 2.53328.58 (1.125")W3EG7234S202D3100MHz/200Mb/s22228.58 (1.125")PACKAGE DIMENSIONS FOR D3* ALL DIMENSIONS ARE IN MILLIMETERS AND (INCHES).White Electronic Designs W3EG7234S-D3-JD3-AJD3PRELIMINARY Document Title256MB - 32Mx72 DDR SDRAM REGISTERED, w/PLLRevision HistoryRev #History Release Date StatusRev A Created5-21-02Advanced7-04Preliminary Rev 00.1 Updated CAP and I DD specs0.2 Removed "E D" from Part Marking0.3 Added JD3 and AJD3 Package Height Options0.4 Moved datasheet from Advanced to Preliminary0.5 Added new Document Title PageRev 1 1.1 Added AC specs11-04Preliminary Rev 2 2.1 Updated I DD specs12-04Preliminary。

Bosch Access Control系列产品介绍说明书

Bosch Access Control系列产品介绍说明书
ARD-ENTRYPROX
Bosch controller compatibility
Software compatibility (Min. requirement)
Controller interface (Protocol) Wiring connection Read / Write ability Reading format Operating voltage Degree of protection (IP) Read range Keypad Mounting type Dimensions (H x W x D)
Quick Selection Guide Access Control Systems

Reliable and flexible solutions for any project
2 | Access Control Systems
Card readers – 125 kHz
4 | Access Control Systems
Card readers – 125 kHz
Material description
Commercial type number (CTN)
Card reader with keypad, EM
ARD-AYCF64
Card reader, keypad EM, vandal-resistant
ARD-AYH12
Access Control Systems | 3
Card reader, EM, vandal-resistant
ARD-AYQ12
Bosch controller compatibility Software compatibility (Min. requirement) Controller interface (Protocol) Wiring connection Read / Write ability Reading format Operating voltage Degree of protection (IP) Read range Keypad

TrekStor MiniPC W3说明书

TrekStor MiniPC W3说明书

MiniPC W3Small-format PC with Windows 10, Intel Inside® and passive cooling‘Nomen est omen’... nowhere is this more true than with the TrekStor MiniPC W3.It stands out on account of its remarkably high performance and commercial connection potential. It’s just like a PC, except for the fact that it measures only 98 x 98 x 23 mm ...Maxi miniIt offers maximum performance despite its minimal size. This is because its powerful Quad-Core Intel® Atom™ x5-Z8300 processor expertly performs all of the common daily (office) tasks with great ease. Moreover, it offers attractive advantages such as fanless and absolutely noise-free operation and sensational energy efficiency.The MiniPC W3 may be black on the outside, but its green at heart.Perfect design provides stabilityIts design defends against the annoying problem of heat that persistently haunts PC sticks, thereby guaranteeing the constant performance for the processor, which can continue to work like a busy bee without feeling any effects. The design ensures that it is simple and convenient to reach all of the connections, including the power button.Connection potentialWith 1 x HDMI®, 1 x USB 3.0, 1 x USB 2.0, 1 x Micro-USB, 1 x audio out/mic in and a microSD card slot, it features a wide range of connection options, naturally including wireless Bluetooth® and WiFi connections.However, it is the integrated Ethernet interface that turns the MiniPC W3 into something special. Just imagine the stable, constant data transfer rate when uploading and downloading on a range of servers!Windows 10The MiniPC W3 is one of the first devices to be issued with the new Windows 10. This enables you to do more with ease – anytime, anywhere and across device boundaries.A genie in fancy liveryThe contemporary, low key design of the MiniPC W3 is by no means understated. It fits discreetly into any environment and only requires a space measuring 10 x 10 cm. Visible or hidden, it provides outstanding services: whether it be the main PC in the children’s bedroom or a home office PC in a niche in the hallway or if it’s used as a streaming box for the projector or TV in the living room or bedroom or for an Internet connection in the spare room.MiniPC W3Small-format PC with Windows 10, Intel Inside® and passive coolingWith multi-optional performance, impressive speed and round-the-clock availability, the TrekStor MiniPC W3 becomes a grey eminence for effectiveness and your master of ceremonies for entertainment.See for yourself!Technical detailsHardwareProcessor (CPU)Intel® Atom™ x5-Z8300 Processor (up to 1.84 GHz, 2 MB Intel® Smart-Cache) Processor design Quad coreRAM 2 GB (DDR3)Internal storage32 GB*Graphic Unit (GPU)Intel® HD GraphicsInterface 1 x HDMI® 1.4, 1 x USB-A 3.0, 1 x USB 2.0,1 x Micro-USB 2.0 (with host function), ethernet, audio out/mic in (3.5 mm),card reader, WiFi, Bluetooth® 4.0, DC INSupported memory cards microSD, microSDHC, microSDXC (max. 128 GB)Dimensions ca. 98 mm x 22.5 mm x 98 mmWeight ca. 245 g (only the device without accessories)Housing material PlasticColor BlackInternet connectionWiFi802.11 b/g/n: 2.4 GHzEthernet RJ45, 100 Mbit/sRecord and playbackVideo playback Full HD (1080p)Playable video formats DivX,MPEG-4.10H.264/AVC(*******,*******),MPEG-4.2 SP/ASP (e.g. Xvid)Video container formats AVI, MP4, WMVSupported picture formats BMP, GIF, JPEG, PNGPlayable audio formats AAC, MP3, PCM, WAV, WMAOther characteristicsOperating system Windows 10 HomePower supply power adapterPackage contents MiniPC W3, power adapter (100 V - 240 V),Product Safety and Legal Information, quick guideTechnical detailsMemory card not included in the delivery.* 1 GB = 1 000 000 000 Bytes.Intel, Intel Atom and the Intel Inside logo are trademarks of Intel Corporation in the U.S. and/or other countries. We reserve the right to make changes and corrections.You can find further information and accessories at/detail-minipc-en/product/minipc-w3.html。

3C产品培训sw

3C产品培训sw

-USB 3.0 接口, 10倍于USB2.0的传输速度
多媒体娱乐体验
- 奥特蓝星扬声器,音质保证 - Sonic Focus音效软件,带来逼真的音效体验 - 支持UVD3第三代视屏解码引擎 分担CPU的占用率,高清播放更流畅
独特外观设计
- 3D效果上盖精致脱俗,彰显个性 - Wave键盘,带来舒适的打字手感 - 触摸板无缝设计,浑然一体,大方美观
2G DDR3 1333MHz, 4G DDR3 1333MHz (A84EI243SJ)
具有2组SOMIDMM内存扩展充槽 系统内存最高可扩充至 8GB(需操作系统支持) 320GB 5400rpm 500GB 5400rpm (A84EI243SJ) Windows7 Home Basic DOS (A84EI243SJ) 14.0” 16:9 LED背光屏幕 (1366*768) 内建多合一读卡器 支持MMC/SD/MS 内建DVD SuperMulti光驱 内建802.11 bgn无线网卡 内建10/100/1000Mbps以太网络模块
- 全球独家屏幕无亮点保证 - 华硕独家屏幕靓彩技术 - 预装Video Magic 影像画质提升软件
震撼听觉
完美视觉
优雅外观 精致细节
急速性能
- 荣获2010年 iF China设计大奖 - 铝合金拉丝屏幕上盖,优雅质感 - 全新波浪型流线侧边设计
- Intel Sandy bridge CPU i5-2410m
Celeron B815(1.6GHz) Intel GMA HD 2000 核心显卡 Intel HM65芯片组
显示屏 系统 读卡器 连接性 摄像头 接口 音效
14.0” 16:9 LED背光屏幕 (1366*768) DOS 内建多合一读卡器 支持MMC/SD/MS 内建802.11 bgn无线网卡 蓝牙™ V2.1 内建10/100/1000Mbps以太网络模块 30万像素高品质摄像头 2x USB 2.0 +1x USB 3.0 1 x VGA 接口 1 x HDMI 接口 1 x 以太网络接口 1x 麦克风输入插孔 1x 耳机输出插孔 Altec Lansing® Speakers(奥特蓝星扬声器)

MEMORY存储芯片NAND256W3A2BN6E中文规格书

MEMORY存储芯片NAND256W3A2BN6E中文规格书

Device Command CodesThe system CPU provides control of all in-system READ, WRITE, and ERASE operationsof the device via the system bus. The device manages all block-erase and word-programalgorithms.Device commands are written to the CUI to control all device operations. The CUI doesnot occupy an addressable memory location; it is the mechanism through which thedevice is controlled.Note: For a dual device, all setup commands should be re-issued to the device when adifferent die is selected.Table 10: Command Codes and DefinitionsTable 10: Command Codes and Definitions (Continued)256Mb and 512Mb (256Mb/256Mb), P30-65nmDevice Command Codessequence error occurs during an ERASE SUSPEND, the status register contains the com-mand sequence error status (SR[7,5,4] set). When the ERASE operation resumes and fin-ishes, possible errors during the operation cannot be detected via the status register be-cause it contains the previous error status.3.When bits 5:4 indicate a PROGRAM/ERASE operation error, either a CLEAR STATUS REG-ISTER 50h) or a RESET command must be issued with a 15µs delay.Clear Status RegisterThe CLEAR STATUS REGISTER command clears the status register. It functions inde-pendently of V PP. The device sets and clears SR[7,6,2], but it sets bits SR[5:3,1] withoutclearing them. The status register should be cleared before starting a command se-quence to avoid any ambiguity. A device reset also clears the status register.Configuration RegisterRead Configuration RegisterThe read configuration register (RCR) is a 16-bit read/write register used to select busread mode (synchronous or asynchronous) and to configure device synchronous burstread characteristics. To modify RCR settings, use the CONFIGURE READ CONFIGURA-TION REGISTER command. RCR contents can be examined using the READ DEVICEIDENTIFIER command and then reading from offset 0x05. On power-up or exit from re-set, the RCR defaults to asynchronous mode. RCR bits are described in more detail be-low.Note: Reading the configuration register is a nonarray READ operation. When the oper-ation occurs in asynchronous page mode, only the first data is valid, and all subsequentdata are undefined. When the operation occurs in synchronous burst mode, the sameword of data requested will be output on successive clock edges until the burst lengthrequirements are satisfied.Table 17: Read Configuration RegisterRead ModeThe read mode (RM) bit selects synchronous burst mode or asynchronous page modeoperation for the device. When the RM bit is set, asynchronous page mode is selected(default). When RM is cleared, synchronous burst mode is selected.Latency CountThe latency count (LC) bits tell the device how many clock cycles must elapse from therising edge of ADV# (or from the first valid clock edge after ADV# is asserted) until thefirst valid data word is driven to DQ[15:0]. The input clock frequency is used to deter-mine this value. The First Access Latency Count figure shows the data output latency fordifferent LC settings.Figure 13: First Access Latency CountCLK [C]Address [A]ADV# [V]DQ[15:0] [D/Q]DQ[15:0] [D/Q]DQ[15:0] [D/Q]DQ[15:0] [D/Q]DQ[15:0] [D/Q]DQ[15:0] [D/Q]DQ[15:0] [D/Q]DQ[15:0] [D/Q]Note: 1.First Access Latency Count Calculation:•1 / CLK frequency = CLK period (ns)•n x (CLK period) ≥t AVQV (ns) – t CHQV (ns)•Latency Count = n。

戴尔 Vostro 3750 用户手册说明书

戴尔 Vostro 3750 用户手册说明书

Dell Vostro 3750用户手册管制型号 P13E管制类型 P13E001注、警告和严重警告备注: “注”表示可以帮助您更好地使用计算机的重要信息。

小心: “小心”表示如果不遵循说明,就有可能损坏硬件或导致数据丢失。

警告: “严重警告”表示可能会造成财产损失、人身伤害甚至死亡。

本文中的信息如有更改,恕不另行通知。

© 2011 Dell Inc. 版权所有,翻印必究。

未经 Dell Inc. 书面许可,严禁以任何形式复制这些材料。

本文中使用的商标: Dell™、 DELL 徽标、 Dell Precision™、 Precision ON™、ExpressCharge™、 Latitude™、Latitude ON™、 OptiPlex™、 Vostro™和 Wi-Fi Catcher™是 Dell Inc. 的商标。

Intel®、 Pentium®、 Xeon®、 Core™、 Atom™、 Centrino®和 Celeron®是 Intel Corporation 在美国和/或其他国家或地区的注册商标。

AMD®是注册商标, AMD Opteron™、 AMD Phenom™、 AMD Sempron™、 AMD Athlon™、 ATI Radeon™和 ATI FirePro™是 Advanced Micro Devices, Inc. 的商标。

Microsoft®、 Windows®、 MS-DOS®、 Windows Vista®、Windows Vista 开始按钮和 Office Outlook®是 Microsoft Corporation 在美国和/或其他国家或地区的注册商标。

Blu-ray Disc™是 Blu-ray Disc Association (BDA) 拥有的商标,经其许可在磁盘和播放器上使用。

G.SKILL DDR3内存型号参考清单说明书

G.SKILL DDR3内存型号参考清单说明书

G.SKILL F3-3000C12Q-16GTXDG16GB (4 x 4GB )SS--- 1.65V●●●G.SKILL F3-2933C12D-8GTXDG8GB (2 x 4GB )SS--12-14-14-35 1.65V●●G.SKILL F3-2933C12Q-16GTXDG16GB (4 x 4GB )SS--12-14-14-35 1.65V●●●G.SKILL F3-2800C11Q-16GTXD(XMP)16GB(4GBx4)DS--11-13-13-35 1.65V●●CORSAIR CMD16GX3M4A2666C11 (XMP)4GB DS--11-13-13-35 1.65V●●●G.SKILL F3-2666C11Q-16GTXD(XMP)16GB(4GBx4)DS--11-13-13-35 1.65V●●●Team TXD34G2666HC11CBK8GB ( 2x 4GB )SS--11-13-13-35 1.65V●●●Team TXD38G2666HC11CBK16GB ( 2x 8GB )DS--11-13-13-35 1.65V●●G.SKILL F3-2600CL10Q-16GBZMD(XMP)16GB(4x 4GB)DS--10-12-12-31 1.65V●●G.SKILL F3-2600CL11Q-32GBZHD(XMP)32GB(8GBX4)DS--11-13-13-35 1.65V●●ADATA AX3U2600GW8G1116GB ( 2x 8GB )DS--11-13-13-35 1.65V●●CORSAIR CMGTX8(XMP)8GB (2GBx 4)SS--10-12-10-27 1.65V●●G.SKILL F3-2400C10D-8GTX(XMP)8GB(2x 4GB)SS--10-12-12-31 1.65V●●●G.SKILL F3-19200CL11Q-16GBZHD(XMP1.3)16GB ( 4GB x4 )DS--11-11-11-31 1.65V●●G.SKILL F3-19200CL 10Q-32GBZHD(XMP)8GB DS--10-12-12-31 1.65V●●●KINGMAX FLLE88F-C8KKAA HAIS(XMP)2GB SS--10-11-10-30 1.8V●●●KINGSTON KHX24C11T2K2/8X(XMP)4GB DS--- 1.65V●●●ADATA AX3U2400GW8G1116GB ( 2x 8GB )DS--11-13-13-35 1.65V●●ADATA AX3U2400G4G10-DG2(XMP)4GB DS--10-12-12-31 1.65V●●Team TXD38G2400HC10QBK8GB DS--10-12-12-31 1.65V●●●KINGSTON KHX2250C9D3T1K2/4GX(XMP)4GB ( 2x 2GB )DS--- 1.65V●●●GEIL GET34GB2200C9DC(XMP)2GB DS--9-10-9-28 1.65V●●GEIL GET38GB2200C9ADC(XMP)4GB DS--9-11-9-28 1.65V●●KINGMAX FLKE85F-B8KJAA-FEIS(XMP)2GB DS--- 1.5V●●CORSAIR CMT16GX3M4X2133C9(XMP 1.3)16GB ( 4GB x4 )DS--9-11-10-27 1.50V●●●CORSAIR CMT4GX3M2A2133C9(XMP)4GB(2x 2GB)DS--9-10-9-24 1.65V●●●CORSAIR CMT4GX3M2B2133C9(XMP)4GB(2x 2GB)DS--9-10-9-27 1.50V●CORSAIR CMT8GX3M2B2133C9(XMP)8GB ( 4GB x 2)DS--9-11-9-27 1.50V●●●G.SKILL F3-17000CL9Q-16GBZH(XMP1.3)16GB ( 4GB x4 )DS--9-11-10-28 1.65V●●●G.SKILL F3-17000CL11Q2-64GBZLD(XMP)8GB DS--11-11-11-31 1.5V●●●G.SKILL F3-2133C11Q-32GZL(XMP)8GB DS--11-11-11-31 1.5V●●●GEIL GE34GB2133C9DC(XMP)2GB DS--9-9-9-28 1.65V●●GEIL GU34GB2133C9DC(XMP)4GB(2 x 2GB)DS--9-9-9-28 1.65V●●KINGSTON KHX2133C11D3K4/16GX(XMP)16GB ( 4GB x4 )DS--- 1.65V●●●KINGSTON KHX2133C11D3T1K2/16GX(XMP)16GB(8GB x 2)DS--- 1.6V●●●KINGSTON KHX21C11T1BK2/16X(XMP)16GB(8GBx2)DS--- 1.6V●●●KINGSTON KHX2133C9AD3T1K2/4GX(XMP)4GB ( 2x 2GB )DS--- 1.65V●●●KINGSTON KHX2133C9AD3X2K2/4GX(XMP)4GB(2 x 2GB)DS--9-11-9-27 1.65V●●●KINGSTON KHX2133C9AD3T1K4/8GX(XMP)8GB(4 x 2GB)DS--9-11-9-27 1.65V●KINGSTON KHX21C11T1BK2/8X(XMP)8GB(4GBx2)DS--- 1.6V●●●KINGSTON KHX2133C9AD3T1FK4/8GX(XMP)8GB(4x 2GB)DS--- 1.65V●●KINGSTON KHX21C11T3K4/32X8GB DS--- 1.65V●●●ADATA AX3U2133XW8G1016GB ( 2x 8GB )DS--10-11-11-30 1.65V●●●ADATA AX3U2133XC4G10-2X(XMP)4GB DS--10-11-11-30 1.65V●●●ADATA AX3U2133XW8G10-2X(XMP)8GB DS--10-11-11-30 1.65V●●●Team TXD34096M2133HC11-L4GB SS--- 1.5V●●●Team TLD38G2133HC11ABK8GB DS--11-11-11-31 1.65V●●●Apacer78.AAGD5.9KD(XMP)6GB(3 x 2GB)DS--9-9-9-27 1.65V●●●CORSAIR CMZ4GX3M2A2000C10(XMP)4GB(2 x 2GB)SS--10-10-10-27 1.50V●●●CORSAIR CMT6GX3M3A2000C8(XMP)6GB(3 x 2GB)DS--8-9-8-24 1.65V●●●G.SKILL F3-16000CL9D-4GBFLS(XMP)4GB(2 x 2GB)DS--9-9-9-24 1.65V●●G.SKILL F3-16000CL9D-4GBTD(XMP)4GB(2 x 2GB)DS--9-9-9-27 1.65V●●G.SKILL F3-16000CL6T-6GBPIS(XMP)6GB (3x 2GB )DS--6-9-6-24 1.65V●●●GEIL GUP34GB2000C9DC(XMP)4GB(2 x 2GB)DS--9-9-9-28 1.65V●●KINGSTON KHX2000C9AD3T1K2/4GX(XMP)4GB ( 2x 2GB )DS--- 1.65V●●KINGSTON KHX2000C9AD3W1K2/4GX(XMP)4GB ( 2x 2GB )DS--- 1.65V●●KINGSTON KHX2000C9AD3W1K3/6GX(XMP)6GB ( 3x 2GB )DS--- 1.65V●●KINGSTON KHX2000C9AD3T1K3/6GX(XMP)6GB (3x 2GB )DS--- 1.65V●●CORSAIR CMT4GX3M2A1866C9(XMP)4GB(2 x 2GB)DS--9-9-9-24 1.65V●●●CORSAIR CMT6GX3MA1866C9(XMP)6GB(3 x 2GB)DS--9-9-9-24 1.65V●●CORSAIR CMZ8GX3M2A1866C9(XMP)8GB(2 x 4GB)DS--9-10-9-27 1.50V●●●CRUCIAL BLE4G3D1869DE1TXO.16FMD(XMP)4GB DS--9-9-9-27 1.5V●●●CRUCIAL BLT4G3D1869DT1TX0.13FKD(XMP)4GB DS--9-9-9-27 1.5V●●●CRUCIAL BLT4G3D1869DT2TXOB.16FMR(XMP)4GB DS--9-9-9-27 1.5V●●G.SKILL F3-14900CL9Q-16GBZL(XMP1.3)16GB ( 4GB x4 )DS--9-10-9-28 1.5V●●●G.SKILL F3-14900CL10Q2-64GBZLD(XMP1.3)64GB ( 8GBx 8 )DS--10-11-10-30 1.5V●●●G.SKILL F3-14900CL9D-8GBXL(XMP)8GB(2 x 4GB)DS--9-10-9-28 1.5V●●G.SKILL F3-14900CL9Q-8GBXL(XMP)8GB(2GBx4)DS--9-9-9-24 1.6V●●●KINGSTON KHX1866C9D3K4/16GX(XMP)16GB ( 4GB x4 )DS--- 1.65V●●●KINGSTON KHX1866C11D3P1K2/8G8GB ( 4GB x 2)DS--- 1.5V●●●KINGSTON KHX1866C9D3K2/8GX(XMP)8GB(4GBX2)DS--- 1.65V●●●KINGSTON KHX18C10T3K4/32X8GB DS--- 1.5V●●●ADATA AX3U1866XW8G1016GB ( 2x 8GB )DS--10-11-10-30 1.5V●●●Team TLD38G1866HC10SBK8GB DS--10-11-10-30 1.5V●●●APACER4GB UNB PC3-12800 CL114GB SS APACER AM5D6008BQQSCK--●●●Apacer78.B1GE3.9L10C4GB DS Apacer KZZC AM5D5908DEQSCK--●●●APACER8GB UNB PC3-12800 CL118GB DS APACER AM5D6008BQQSCK--●●●CORSAIR CMD12GX3M6A1600C8(XMP)12GB(6x2GB)DS--8-8-8-24 1.65V●●●CORSAIR CMZ32GX3M4X1600C10(XMP)32GB(8GBx4)DS--10-10-10-27 1.50V●●●CORSAIR CMP4GX3M2A1600C8(XMP)4GB(2 x 2GB)DS--8-8-8-24 1.65V●●●CORSAIR CMP4GX3M2A1600C9(XMP)4GB(2 x 2GB)DS--9-9-9-24 1.65V●●●CORSAIR CMP4GX3M2C1600C7(XMP)4GB(2 x 2GB)DS--7-8-7-20 1.65V●●●CORSAIR CMX4GX3M2A1600C9(XMP)4GB(2 x 2GB)DS--9-9-9-24 1.65V●●●CORSAIR TR3X6G1600C8 G(XMP)6GB(3 x 2GB)DS--8-8-8-24 1.65V●●●CORSAIR TR3X6G1600C8D G(XMP)6GB(3 x 2GB)DS--8-8-8-24 1.65V●●●CORSAIR TR3X6G1600C9 G(XMP)6GB(3 x 2GB)DS--9-9-9-24 1.65V●●●CORSAIR CMP8GX3M2A1600C9(XMP)8GB(2 x 4GB)DS--9-9-9-24 1.65V●●●CORSAIR CMZ8GX3M2A1600C7R(XMP)8GB(2 x 4GB)DS--7-8-7-20 1.50V●●CORSAIR CMX8GX3M4A1600C9(XMP)8GB(4 x 2GB)DS--9-9-9-24 1.65V●●●CORSAIR CMZ8GX3M1A1600C10(XMP)8GB DS--10-10-10-27 1.50V●●●Crucial BL25664BN1608.16FF(XMP)6GB(3 x 2GB)DS--- 1.65V●●●G.SKILL F3-12800CL7D-4GBRH(XMP)4GB(2 x 2GB)SS--7-7-7-24 1.6V●●●G.SKILL F3-12800CL7D-4GBRM(XMP)4GB(2 x 2GB)DS--7-8-7-24 1.6V●●●G.SKILL F3-12800CL8D-4GBRM(XMP)4GB(2 x 2GB)DS--8-8-8-24 1.60V●●G.SKILL F3-12800CL9D-4GBECO(XMP)4GB(2 x 2GB)DS--9-9-9-24XMP 1.35V●●G.SKILL F3-12800CL9D-4GBRL(XMP)4GB(2 x 2GB)DS--9-9-9-24 1.5V●●●G.SKILL F3-12800CL7D-8GBRH(XMP)8GB(2 x 4GB)DS--7-8-7-24 1.6V●●●G.SKILL F3-12800CL8D-8GBECO(XMP)8GB(2 x 4GB)DS--8-8-8-24XMP 1.35V●●●G.SKILL F3-12800CL9D-8GBRL(XMP)8GB(2 x 4GB)DS--9-9-9-24 1.5V●●●G.SKILL F3-12800CL10S-8GBXL(XMP)8GB DS--10-10-10-30-●●●GEIL GET316GB1600C9QC(XMP)16GB ( 4x 4GB )DS--9-9-9-28 1.6V●●●HYNIX HMT351U6CFR8C-PB4GB DS HYNIX H5TQ2G83CFR PBC--●●●KINGMAX FLGE85F-B8KJ9A FEIS(XMP)2GB DS--- 1.5V●●●KINGMAX FLGE85F-B8MF7 MEEH(XMP)2GB DS--7 1.8V/1.9V●KINGSTON KHX1600C9D3P1K2/4G4GB(2 x 2GB)SS--- 1.5V●●●KINGSTON KHX1600C9D3K3/12GX(XMP)12GB(3x4GB)DS--9-9-9-27 1.65V●●●KINGSTON KHX1600C9D3T1BK3/12GX(XMP)12GB(3x4GB)DS--9-9-9-27 1.65V●●KINGSTON KHX1600C9D3K4/16GX(XMP)16GB ( 4GB x4 )DS--- 1.65V●●●KINGSTON KHX16C9K2/1616GB(8GBx2)DS--- 1.5V●●KINGSTON KHX1600C9AD3/2G2GB DS--- 1.65V●●●KINGSTON KVR1600D3N11/2G-ES2GB DS KTC D1288JPNDPLD9U11-11-11-28 1.35V-1.5V●●●KINGSTON KHX1600C7D3K2/4GX(XMP)4GB ( 2x 2GB )DS--- 1.65V●●●KINGSTON KHX1600C8D3K2/4GX(XMP)4GB(2 x 2GB)DS--8 1.65V●●●KINGSTON KHX1600C8D3T1K2/4GX(XMP)4GB(2 x 2GB)DS--8 1.65V●●●KINGSTON KHX1600C9D3K2/4GX(XMP)4GB(2 x 2GB)DS--9 1.65V●●●KINGSTON KHX1600C9D3LK2/4GX(XMP)4GB(2 x 2GB)DS--9XMP 1.35V●●●KINGSTON KHX1600C9D3X2K2/4GX(XMP)4GB(2 x 2GB)DS--9-9-9-27 1.65V●●●KINGSTON KVR16N11/4(矮版)4GB DS KINGSTON D2568GEROPGGBU- 1.5V●●●KINGSTON KHX1600C9D3T1K3/6GX(XMP)6GB ( 3x 2GB )DS--- 1.65V●●KINGSTON KHX1600C9D3K3/6GX(XMP)6GB(3 x 2GB)DS--9 1.65V●●KINGSTON KHX1600C9D3T1BK3/6GX(XMP)6GB(3 x 2GB)DS--9-9-9-27 1.65V●●●KINGSTON KHX1600C9D3K2/8GX(XMP)8GB(2 x 4GB)DS--- 1.65V●●KINGSTON KHX1600C9D3P1K2/8G8GB(2 x 4GB)DS--- 1.5V●●●KINGSTON KHX16C10B1K2/16X(XMP)8GB DS--- 1.5V●●●KINGSTON KHX16C9P1K2/16(XMP)8GB DS--- 1.5V●●●PSC AL9F8L93B-GN2E4GB SS PSC XHP284C3G-M--●●●PSC ALAF8L93B-GN2E8GB DS PSC XHR425C3G-M--●●●Transcend8G DDR3 1600 DIMM CL118GB DS SEC 222 HYKO6MD9639W--●●●Transcend8G DDR3 1600 DIMM CL118GB DS Transcend E223X8BO648S--●●●ADATA AD3U1600C2G11-B2GB SS-N/A--●●●ADATA AD3U1600W4G11-B4GB SS ADATA F209X8BR6413--●●●ADATA AX3U1600GW8G916GB ( 2x 8GB )DS--9-9-9-24 1.5V●●●ADATA AX3U1600W8G1116GB ( 2x 8GB )DS--11-11-11-28 1.5V●●●ADATA AXDU1600GW8G9B16GB ( 2x 8GB )DS--11-11-11-28 1.5V●●●ADATA AD3U1600C4G11-B4GB DS-N/A--●●●ADATA AD3U1600W8G11-B8GB DS ADATA F211X8B0640A--●●SanMax SMD-4G68HP-16KZ4GB DS HYNIX H5TQ2G83BFR PBC--●●●TEAM TED34G1600HC11BK4GB DS--11-11-11-28-●●●TEAM TLD34G1600HC9BK(XMP)4GB DS--9-9-24 1.5V●●●Team TED38G1600HC11BK8GB DS--11-11-11-28-●●●A-DATA AD3U1333C2G92GB SS A-DATA3CCD-1509HNA1126L--●●●A-DATA AX3U1333C2G9-BP2GB SS----●●●A-DATA AD31333G002GMU2GB DS--8-8-8-24 1.65-1.85V●●Apacer78.A1GC6.9L12GB DS Apacer AM5D5808DEWSBG--●●●Apacer78.A1GC6.9L12GB DS Apacer AM5D5808FEQSBG9-●●●Apacer AU02GFA33C9NBGC2GB DS Apacer AM5D5808APQSBG--●●●Apacer78.B1GDE.9L10C4GB DS Apacer AM5D5908CEHSBG--●●●CORSAIR TR3X6G1333C9 G6GB(3x 2GB)SS--9-9-9-24 1.50V●●●CORSAIR CMD24GX3M6A1333C9(XMP)24GB(6x4GB)DS--9-9-9-24 1.60V●●CORSAIR TW3X4G1333C9D G4GB(2 x 2GB)DS--9-9-9-24 1.50V●●●CORSAIR CM3X4GA1333C9N24GB DS CORSAIR256MBDCJGELC04011369-9-9-24-●●●CORSAIR CMX4GX3M1A1333C94GB DS--9-9-9-24 1.50V●●●CORSAIR CMD8GX3M4A1333C78GB(4 x 2GB)DS--7-7-7-20 1.60V●●●Crucial CT25664BA1339.16FF2GB DS Micron9KF27D9KPT9-●●●Crucial BL25664BN1337.16FF (XMP)6GB(3 x 2GB)DS--7-7-7-24 1.65V●●●ELPIDA EBJ21UE8EDF0-DJ-F2GB DS ELPIDA J1108EDSE-DJ-F- 1.35V(low voltage)●●●G.SKILL F3-10666CL8D-4GBECO(XMP)4GB(2 x 2GB)DS--8-8-8-8-24XMP 1.35V●●●G.SKILL F3-10666CL7T-6GBPK(XMP)6GB(3 x 2GB)DS--7-7-7-18 1.5~1.6V●G.SKILL F3-10666CL7D-8GBRH(XMP)8GB(2 x 4GB)DS--7-7-7-21 1.5V●●●GEIL GG34GB1333C9DC4GB(2 x 2GB)DS GEIL GL1L128M88BA12N9-9-9-24 1.3V(low voltage)●●●GEIL GV34GB1333C9DC4GB(2 x 2GB)DS--9-9-9-24 1.5V●●●GEIL GVP34GB1333C7DC4GB(2 x 2GB)DS--7-7-7-24 1.5V●●●Hynix HMT325U6BFR8C-H92GB SS Hynix H5TQ2G83BFRH9C--●●●Hynix HMT125U6TFR8A-H92GB DS Hynix H5TC1G83TFRH9A- 1.35V(low voltage)●●●Hynix HMT351U6BFR8C-H94GB DS Hynix H5TQ2G83BFRH9C--●●●KINGMAX FLFE85F-C8KF9 CAES2GB SS KINGMAX KFC8FMFXF-DXX-15A--●●●KINGMAX FLFE85F-C8KL9 NAES2GB SS KINGMAX KFC8FNLXF-DXX-15A--●●●KINGMAX FLFE85F-C8KM9 NAES2GB SS KINGMAX KFC8FNMXF-BXX-15A--●●KINGMAX FLFE85F-B8KL9 NEES2GB DS KINGMAX KKB8FNWBFGNX-26A--●●●KINGMAX FLFF65F-C8KL9 NEES4GB DS KINGMAX KFC8FNLXF-DXX-15A--●●●KINGMAX FLFF65F-C8KM9 NEES4GB DS KINGMAX KFC8FNMXF-BXX-15A--●●●KINGSTON KVR1333D3N9/2G(矮版)2GB SS Hynix H5TQ2G83AFRH9C9-●●●KINGSTON KVR1333D3S8N9/2G2GB SS Micron IID77 D9LGK- 1.5V●●●KINGSTON KVR1333D3S8N9/2G-SP(矮版)2GB SS ELPIDA J2108BCSE-DJ-F- 1.5V●●●KINGSTON KVR1333D3N9/2G(矮版)2GB DS ELPIDA J1108BFBG-DJ-F9 1.5V●●●KINGSTON KVR1333D3N9/2G-SP(矮版)2GB DS KTC D1288JEMFNGD9U- 1.5V●●●KINGSTON KVR1333D3N9/2G-SP(矮版)2GB DS KINGSTON D1288JPSFPGD9U- 1.5V●●●KINGSTON KHX1333C7D3K2/4GX(XMP)4GB(2 x 2GB)DS--7 1.65V●●●KINGSTON KHX1333C9D3UK2/4GX(XMP)4GB(2 x 2GB)DS--9XMP 1.25V●●KINGSTON KVR1333D3N9/4G(矮版)4GB DS ELPIDA J2108BCSE-DJ-F- 1.5V●●●KINGSTON KVR1333D3N9/4G4GB DS KTC D2568JENCNGD9U- 1.5V●●●KINGSTON KVR1333D3N9/4G4GB DS Hynix H5TQ2G83AFR--●●●KINGSTON KVR1333D3N9/4G-SP(矮版)4GB DS KINGSTON D2568JENCPGD9U- 1.5V●●●Micron MT8JTF25664AZ-1G4D12GB SS Micron OJD12D9LGK--●●●Micron MT8JTF25664AZ-1G4M12GB SS MICRON IJM22 D9PFJ--●●●Micron MT16JTF51264AZ-1G4D14GB DS Micron OLD22D9LGK--●●●NANYA NT4GC64B8HG0NF-CG4GB DS NANYA NT5CB256M8GN-CG--●●●PSC AL8F8G73F-DJ22GB DS PSC A3P1GF3FGF--●●●SAMSUNG M378B5773DH0-CH92GB SS SAMSUNG K4B2G0846D--●●●SAMSUNG M378B5673FH0-CH92GB DS SAMSUNG K4B1G0846F--●●●SAMSUNG M378B5273CH0-CH94GB DS SAMSUNG K4B2G0846C--●●●SAMSUNG M378B1G73AH0-CH98GB DS SAMSUNG K4B4G0846A-HCH9--●●Super Talent W1333UB2GS2GB DS SAMSUNG K4B1G0846F9-●●●Super Talent W1333UB4GS4GB DS SAMSUNG K4B2G0846C--●●●Super Talent W1333UX6GM6GB(3x 2GB)DS Micron0BF27D9KPT9-9-9-24 1.5V●●●Transcend JM1333KLN-2G2GB SS HYNIX H5TQ2G83BZRH9C--●●●Transcend8G DDR3 1333 DIMM CL98GB DS Transcend E207X8BO643Y--●●Transcend8G DDR3 1333 DIMM CL98GB DS-N/A--●●●KINGSTEK KSTD3PC-106002GB SS MICRON PE911-125E--●●●TEAM TED34G1333HC9BK4GB DS--9-9-9-24-●●TEAM TED38G1333HC9BK8GB DS--9-9-9-24-●●●Crucial CT25664BA1067.16FF2GB DS Micron9HF22D9KPT7-●●●ELPIDA EBJ21UE8EDF0-AE-F2GB DS ELPIDA J1108EDSE-DJ-F- 1.35V(low voltage)●●●KINGSTON KVR1066D3N7/2G2GB DS ELPIDA J1108BFSE-DJ-F- 1.5V●●●KINGSTON KVR1066D3N7/4G4GB DS Hynix H5TQ2G83AFR7 1.5V●●●4 DIMM Slots• 1 DIMM: Supports one module inserted in any slot as Single-channel memory configuration• 2 DIMM: Supports one pair of modules inserted into eithor the yellow slots or the dark brown slots as one pair of Dual-channel memory configuration• 4 DIMM: Supports 4 modules inserted into both the yellow and dark brown slots as two pairs of Dual-channel memory configuration-When installing total memory of 4GB capacity or more, Windows 32-bit operation system may only recognize less than 3GB. Hence, a total installed memory of less than 3GB is recommended.-It is recommended to install the memory modules from the yellow slots for better overclocking capability.-The default DIMM frequency depends on its Serial Presence Detect (SPD), which is the standard way of accessing information from a memory module.Under the default state, some memory modules for overclocking may operate at a lower frequency than the vendor-marked value.。

茂莱V2406C系列 seventh-generation Core CPU 火车计算机说明书

茂莱V2406C系列 seventh-generation Core CPU 火车计算机说明书

V2406C Series7th Gen Intel®Core™CPU railway computers with2Mini PCIe expansion slots for wireless modules,2hot-swappable HDD/SSD slots,power isolationFeatures and Benefits•Intel®Celeron®/Intel®Core™i3/i5/i7high performance network videorecorder for rolling stock applications•DDR4memory slot;up to32GB capacity•Supports dual independent displays(VGA and HDMI with4K resolution)•2Gigabit Ethernet ports with M12X-coded connectors•M12A-coded power connector•Complies with all EN50155mandatory test items1•Compliant with EN50121-4•IEC61373certified for shock and vibration resistance•-40to70°C wide-temperature models availableCertificationsIntroductionThe V2406C Series embedded computers are built around an Intel®Core™i7/i5/i3or Intel®Celeron®high-performance processor and come with up to32GB RAM,one mSATA slot,and two hot-swappable HDD/SSD for storage expansion.The computers are compliant with EN50155:2017 and EN50121-4standards covering operating temperature,power input voltage,surge,ESD,and vibration,making them suitable for railway onboard and wayside applications.For connecting with onboard and wayside systems and devices,V2406C computers are equipped with a rich set of interfaces including2Gigabit Ethernet ports,4RS-232/422/485serial ports,6DIs,2DOs,and4USB3.0ports.In addition,the V2406C computers provide1VGA video output and1HDMI output with4K resolution support.For reliable connectivity in train-to-ground(T2G)applications,the computers are provided with2mPCIe wireless expansion slots and4SIM-card slots.These help establish redundant LTE/Wi-Fi connectivity,ensuring solid bidirectional communications between a fast-moving train and the wayside applications.In addition,the preinstalled QMA cable for wireless modules can help reduce assembly efforts and ensure low RF leakage.1.This product is suitable for rolling stock railway applications,as defined by the EN50155standard.For a more detailed statement,click here:/doc/specs/EN_50155_Compliance.pdfAppearanceFront ViewRear ViewSpecificationsComputerCPU V2406C-KL1-T:Intel®Celeron®3965U processor(2M Cache,2.2GHz)V2406C-KL3-T:Intel®Core™i3-7100U processor(3M Cache,2.4GHz)V2406C-KL5-T:Intel®Core™i5-7300U processor(3M Cache,2.6GHz)V2406C-KL7-T:Intel®Core™i7-7600U processor(4M Cache,2.8GHz) Storage Slot 2.5-inch HDD/SSD slots x2mSATA slots x1,internal mini-PCIe socketSupported OS Linux Debian9Windows10Embedded IoT Ent2019LTSC64-bit System Memory Slot SODIMM DDR4slot x2DRAM32GB maxGraphics Controller Intel®HD Graphics620Computer InterfaceEthernet Ports Auto-sensing10/100/1000Mbps ports(M12X-coded)x2 Digital Output DOs x2Serial Ports RS-232/422/485ports x4,software selectable(DB9male) Digital Input DIs x6USB3.0USB3.0hosts x4,type-A connectorsAudio Input/Output Line in x1,Line out x1,3.5mm phone jackVideo Output VGA x1,15-pin D-sub connector(female)HDMI x1,HDMI connector(type A)Digital InputsConnector Screw-fastened Euroblock terminalI/O Mode DIIsolation3k VDCSensor Type Wet contact(NPN or PNP)Dry contactDry Contact Logic0:Short to GNDLogic1:OpenWet Contact(DI to COM)Logic0:0to3VDCLogic1:10to30VDCDigital OutputsConnector Screw-fastened Euroblock terminal10-pin terminal blockCurrent Rating200mA per channelI/O Type SinkVoltage0to30VDCIsolation3k VDCLED IndicatorsSystem Power x1Storage x1LAN2per port(10/100/1000Mbps)Serial2per port(Tx,Rx)Serial InterfaceBaudrate50bps to115.2kbpsData Bits5,6,7,8Flow Control RTS/CTS,XON/XOFF,ADDC®(automatic data direction control)for RS-485,RTSToggle(RS-232only)Parity None,Even,Odd,Space,MarkStop Bits1,1.5,2Serial SignalsRS-232TxD,RxD,RTS,CTS,DTR,DSR,DCD,GNDRS-422Tx+,Tx-,Rx+,Rx-,GNDRS-485-2w Data+,Data-,GNDRS-485-4w Tx+,Tx-,Rx+,Rx-,GNDPower ParametersInput Voltage24to110VDCPower Connector M12A-coded male connectorPower Consumption(Max.)70W(max.)Physical CharacteristicsHousing AluminumIP Rating IP20Dimensions(without ears)250x75x150mm(9.84x2.95x5.91in)Weight2,700g(5.95lb)Installation Wall mounting(standard)Protection PCB conformal coatingV2406C PCB conformal coating:Available on requestEnvironmental LimitsOperating Temperature-40to70°C(-40to158°F)Storage Temperature(package included)-40to85°C(-40to185°F)Ambient Relative Humidity5to95%(non-condensing)Standards and CertificationsEMI CISPR32,FCC Part15B Class AEMS IEC61000-4-2ESD:Contact:6kV;Air:8kVIEC61000-4-3RS:80MHz to1GHz:20V/mIEC61000-4-4EFT:Power:2kV;Signal:2kVIEC61000-4-5Surge:Power:2kVIEC61000-4-6CS:10VIEC61000-4-8PFMFRailway Fire Protection EN45545-2EMC EN55032/35Safety EN62368-1IEC62368-1UL62368-1Railway EN50121-4EN50121-3-2EN50155:2017Shock IEC60068-2-27,IEC61373 Vibration IEC60068-2-64,IEC61373 DeclarationGreen Product RoHS,CRoHS,WEEEMTBFTime376,538hrsStandards Telcordia(Bellcore),GB WarrantyWarranty Period3yearsDetails See /warranty Package ContentsDevice1x V2406C Series computer Installation Kit2x SSD/HDD trays1x clamp for HDMI cable1x wall-mounting kit Documentation1x quick installation guide1x warranty cardDimensionsOrdering InformationModel NameCPUMemory OS Storage (mSATA)SSD/HDD (Hot Swap)USBPower InputOperating Temp.Conformal CoatingV2406C-KL1-TCeleron 3965U 2,DDR4,2133MHz (optional);32GB max.1(optional);512GB max.2(optional);1TB max.4x USB 3.0(type A)24to 110VDC (M12A-coded)-40to 70°C –V2406C-KL3-T i3-7100U2,DDR4,2133MHz (optional);32GB max.1(optional);512GB max.2(optional);1TB max.4x USB 3.0(type A)24to 110VDC (M12A-coded)-40to 70°C –V2406C-KL5-T i5-7300U2,DDR4,2133MHz (optional);32GB max.1(optional);512GB max.2(optional);1TB max.4x USB 3.0(type A)24to 110VDC (M12A-coded)-40to 70°C –V2406C-KL7-T i7-7600U2,DDR4,2133MHz (optional);32GB max.1(optional);512GB max.2(optional);1TB max.4x USB 3.0(type A)24to 110VDC (M12A-coded)-40to 70°C –V2406C-KL1-T-CTCeleron 3965U 2,DDR4,2133MHz (optional);32GB max.1(optional);512GB max.2(optional);1TB max.4x USB 3.0(type A)24to 110VDC (M12A-coded)-40to 70°C ✓V2406C-KL7-T-CT i7-7600U2,DDR4,2133MHz (optional);32GB max.1(optional);512GB max.2(optional);1TB max.4x USB 3.0(type A)24to 110VDC (M12A-coded)-40to 70°C ✓Accessories (sold separately)Power CordsPWC-C7AU-2B-183Power cord with Australian (AU)plug,2.5A/250V,1.83mPWC-C7CN-2B-183Power cord with three-prong China(CN)plug,2.5A/250V,1.83mPWC-C7EU-2B-183Power cord with Continental Europe(EU)plug,2.5A/250V,1.83mPWC-C7UK-2B-183Power cord with United Kingdom(UK)plug,2.5A/250V,1.83mPWC-C7US-2B-183Power cord with United States(US)plug,10A/125V,1.83mBattery KitsRTC Battery Kit Lithium battery with built-in connectorCablesCBL-M12(FF5P)/OPEN-100IP67A-coded M12-to-5-pin power cable,IP67-rated5-pin female M12connector,1mPower AdaptersPWR-24270-DT-S1Power adapter,input voltage90to264VAC,output voltage24V with2.5A DC loadWi-Fi Wireless ModulesV2400-WLAN22-AC SparkLAN WPEQ-261ACNI(BT)Wi-Fi mini card,4black screwsV2400-LTECat4-NA Sierra WP7610LTE Cat.4mini card with2black screws for North AmericaV2400-LTECat4-EMEA Sierra WP7607LTE Cat.4mini card with2black screws for the EMEA regionV2406C TPM2.0Module SLB9665XT2.0TPM2.0moduleV2400Cover-DB9Dual DB9expansion cover,4male hex standoff spacer pillars©Moxa Inc.All rights reserved.Updated Jan18,2021.This document and any portion thereof may not be reproduced or used in any manner whatsoever without the express written permission of Moxa Inc.Product specifications subject to change without notice.Visit our website for the most up-to-date product information.。

Fujitsu CELSIUS W380工作站数据表说明书

Fujitsu CELSIUS W380工作站数据表说明书

Data Sheet Fujitsu CELSIUS W380 WorkstationWindows®. Life without Walls™.Fujitsu recommends Windows 7.Data SheetFujitsu CELSIUS W380 WorkstationWelcome to a world of powerThe CELSIUS W380 is the versatile all-round workstation for entry-level graphics applications. Poweredby the latest Intel® processors, it is the ideal choice business environments such as entry-level CAD, digital content creation and finance. Thanks to the ISV certification process you can be guaranteed that your preferred professional applications will run with maximum speed and system stability.Extremely powerful workstationsGet more done in less timeThe fastest available processors, graphics cards and hard disk drivesNoise-reduced systemSilent working enviromentOptimized thermal management, low-noise chassis and silent fansServiceabilityMinimum downtime in the event of system failureService-friendly system designLeading workstation application certificationMaximum compatibility and performance with customer-preferred applicationsFull support for ISV applications and easy integration into existing IT environmentsBuilt to orderFree configurability for all product linesCustomer is given a system optimized for his requirementsComponentsOperating systemOperating system Genuine Windows® 7 Professional 64-bitGenuine Windows® 7 Professional 32-bitGenuine Windows® 7 Home Premium 64-bitOperating system compatible Genuine Windows Vista® Business 64-bitGenuine Windows Vista® Business 32-bitGenuine Windows® XP Professional x64 EditionGenuine Windows® XP ProfessionalLinuxOperating system notes Red Hat® certification pendingNovell® certification pendingFor some configurations third party drivers are currently not available or configuration restrictions may apply. Memory modules 2 GB (1 module(s) 2 GB) DDR3, unbuffered, non-ECC, 1333 MHz, PC3-10600, DIMM4 GB (1 module(s) 4 GB) DDR3, unbuffered, non-ECC, 1333 MHz, PC3-10600, DIMMGraphics add on cards (optional)Midrange 3D: ATI FirePro™ V5800, 1 GB, 800 stream processors, PCIe x16, DL-DVI-I, 2x DPMidrange 3D: NVIDIA® Quadro® 2000, 1 GB, 192 cores, PCIe x16, DL-DVI-I, 2x DPMidrange 3D: ATI FirePro™ V5900, 2 GB, 800 stream processors, PCIe x16, DL-DVI-I, 2x DPEntry 3D: ATI FirePro™ V4800, 1 GB, 400 stream processors, PCIe x16, DL-DVI-I, 2x DPEntry 3D: NVIDIA® Quadro® 600, 1 GB, 96 cores, PCIe x16, DL-DVI-I, DPEntry 3D: ATI FirePro™ V3800, 512 MB, 400 stream processors, PCIe x16, DL-DVI-I, DPEntry 3D: NVIDIA® Quadro® FX 380, 256 MB, 16 cores, PCIe x16, 2x DL-DVI-IProfessional 2D: NVIDIA® Quadro® NVS 450, 512 MB, 2 x 8 cores, PCIe x16, 4 x DPProfessional 2D: NVIDIA® Quadro® NVS 295, 256 MB, 8 Cores, PCIe x16, 2x DPProfessional 2D: NVIDIA® Quadro® NVS 290, 256 MB, 16 cores, PCIe x16, 2x SL DVI-IRemote Graphics: CELSIUS RemoteAccess Card, PCIe x1, 2x DVI-IHard disk drives (internal)SSD SATA, 256 GB, 2.5-inchSSD SATA, 128 GB, 2.5-inchHDD SATA III, 10000 rpm, 600 GB, 3.5-inch internalHDD SATA III, 10000 rpm, 300 GB, 2.5-inchHDD SATA III, 7200 rpm, 1000 GB, 3.5-inch, business criticalHDD SATA III, 7200 rpm, 500 GB, 3.5-inch, business criticalHDD SATA II, 10000 rpm, 150 GB, 2.5-inch, S.M.A.R.T.HDD SATA II, 7200 rpm, 2000 GB, 3.5-inch, business criticalHDD SATA II, 7200 rpm, 1000 GB, 3.5-inch, S.M.A.R.T.HDD SATA II, 7200 rpm, 500 GB, 3.5-inch, S.M.A.R.T.HDD SATA II, 7200 rpm, 320 GB, 3.5-inch, S.M.A.R.T.HDD SATA II, 7200 rpm, 250 GB, 3.5-inch, S.M.A.R.T.HDD SATA II, 7200 rpm, 160 GB, 2.5-inch, S.M.A.R.T.Hard disk notes One Gigabyte equals one billion bytes, when referring to hard disk drive capacity.2.5-inch drives will be mounted in the3.5-inch baysDrives (optional)Blu-ray Disc™ Triple WriterDVD-ROMDVD Super MultiMultiCard Reader 20in1, USB 2.0, 3.5-InchMultiCard Reader 20in1 USB 3.0 front con., 3.5-InchInterface add on cards/components(optional)WLAN III, 802.11g/Draft-n (Windows only)USB 3.0 PCIe x1Parallel InterfaceGigabit Ethernet PCIe x1eSATA InterfaceDual serial card PCIBase unit CELSIUS W380MainboardMainboard type D2917Formfactor BTXChipset Intel® 3450Processor socket LGA 1156Processor quantity maximum1Memory slots 4 DIMM (DDR3) ECC/non-ECCSupported capacity RAM (max.)16 GBMemory frequency1333 MHzMemory notes In configurations with 4 GB and more the visible memory may be reduced to approximately 3.5 GB or less (for 32-bitoperating systems) and configurations with 8 GB the visible memory may be reduced to approximately 7.5 GB or less(depending on system configuration).LAN Built-in 10/100/1000 MBit/s Intel® 82578 DMIntegrated WLAN Optional (for Windows only)Audio codec Realtek ALC663Audio features 5.1 surround sound, High Definition audio, Internal speaker supports audio playbackI/O ControllerSerial ATA total6thereof eSATA1, optionalSATA RAID support0, 1, 10, 5InterfacesAudio: in (rear)2Audio: out (rear)1Audio: in1Audio: out1FireWire (IEEE1394) (rear)1Internal speakers1USB 2.0 total13USB front2USB rear8USB internal 2 + 1VGA 1 (depends on processor)DisplayPort 1 (depends on processor)DVI 1 or 2, optional (depends on processor)Serial (RS-232) 1, (9 pin)Mouse / Keyboard (PS/2)2Ethernet (RJ-45)1Parallel1, optionaleSATA1, optionalInterface Module notes Anytime USB charge functionalityDrive baysDrive bays total83.5-inch internal bays43.5-inch external bays25.25-inch external bays2SlotsPCI-Express 2.0 x16 1 x (312 mm) Full heightPCI-Express 2.0 x4 (mech. x16) 1 x (190 mm) Full heightPCI-Express x1 2 x (300 mm) Full heightPCI (32-bit / 33 MHz) 3 x (312 mm)Graphics on boardShared video memory up to 256 MBRefresh rate 1024 x 768 (recommended85 Hz/ max.)Refresh rate 1280 x 102485 Hz(recommended / max.)Refresh rate 1600 x 120085 Hz(recommended / max.)TFT resolution (VGA)1360 x 768 pixel1440 x 900 pixel1680 x 1050 pixel1920 x 1200 pixelTFT resolution (DVI)1360 x 768 pixel1440 x 900 pixel1680 x 1050 pixel1920 x 1200 pixelGraphics notes Graphics controller integrated in dual-core processors. For quad-core processors graphics card is mandatory.Tested resolutions, depending on display type additional resolutions and frequencies possibleShared memory depending on main memory sizeFor TFT we recommend using 60HzElectrical valuesRated voltage range100 V - 240 VRated frequency range50 Hz - 60 HzMax. output of single power supply300 WNoise for standard configuration (HDD, ODD, FDD)Noise emission According to ISO9296 (LpAm at bystander position)Idle mode18 dBOffice mode18 dB(A)Noise notes / description Actual noise emissions may vary depending on configurationDimensions / Weight / EnvironmentalDimensions (W x D x H)203 x 426 x 442 mmOperating position Vertical / horizontalWeight16 kgWeight notes Actual weight may vary depending on configurationOperating ambient temperature10 - 35°COperating relative humidity 5 - 85 % (relative humidity)ComplianceProduct CELSIUS W380Model MTB-D2917Germany GS optionalBlauer Engel / Blue Angel optionalEurope CEUSA/Canada FCC Class BcCSAusGlobal RoHS (EU & China)ENERGY STAR® 5.0Medical EMC standard IEC60601-1-2 in combination with medical kitCompliance notes Energy Star compliance may vary depending on actual configurationCompliance link https:///sites/certificates/default.aspxSecuritySystem protection Kensington Lock supportEye for padlockSeal optionIntrusion switchOptional: Integrated cabinet lockAudit proof protection Write protect option for the Flash EPROMEmbedded security (TPM 1.2)Disable / Hide TPM optionAccess protection Hard disk passwordUser and supervisor BIOS passwordOptional: Access protection via SmartCard readerOptional: SmartCase Logon+Additional SoftwareAdditional software (optional)Drivers & Utilities DVD (DUDVD) Windows® 7 & Vista & XPRecovery DVDTwinLoadWindows® XP downgrade packAdditional software (included as a CD/Norton Internet Security (incl. Firewall)DVD)ManageabilityManageability technology DeskUpdate Driver managementManageability software DeskView 10.x client management including:DeskView components On/Offline remote client managementDetailed system inventory management and reportsBIOS ManagementRemote power managementSystem notificationsSecurity Remote ControlDeskView Helpdesk IntegrationSupported standards WMIBootP (made4you)PXEManageability link /solutions/it_infrastructure_solutions/manageability/featurefinder.html Input device / componentsOptical USB tilt wheel mouseInput devices (optional)Optical USB/PS2 tilt wheel mouseSpace Explorer USBSpace Navigator USBSpace Pilot USBKeyboardWarrantyStandard Warranty 3 years (depending on country)Service level On-site Service (depending on country)Maintenance and Support Services - the perfect extensionRecommended Service5x9, Response Time: Next Business DayService Weblink /SupportserviceContactFUJITSU Technology Solutions Website: 2011-09-16 CE-ENworldwide project for reducing burdens on the environment.Using our global know-how, we aim to resolve issues of environmental energy efficiency through IT.Please find further information at http://www./global/about/environment/delivery subject to availability. Any liability that the data and illustrations are complete, actual or correct is excluded. Designations may be trademarks and/or copyrights of the respective manufacturer, the use of which by third parties for their own purposes may infringe the rights of such ownerMore informationAll rights reserved, including intellectual property rights. Changes to technical data reserved. Delivery subject to availability. Any liability that the data and illustrations are complete, actual or correct is excluded.Designations may be trademarks and/or copyrights of the respective manufacturer, the use of which by third parties for their own purposes may infringe the rights of such owner.For further information see /terms_of_use.html Copyright © Fujitsu Technology Solutions。

MSI G32CQ4 Gaming Monitor说明书

MSI G32CQ4 Gaming Monitor说明书

See beyond the Game.Visualize your victory.Inspired by the rigorous quality testing in the production of MSI Gseries, MSI G series’ design is full of symbols of sturdiness anddurability. Additionally, to provide quality user experience, G serieshas really simple installation process and a friendly user interface,and will be the best choice for entry level gamers to step into thegame world.Picture and logosSELLING POINTSCurved Gaming display (1500R) – The best gameplay immersion.165Hz Refresh Rate – Real smooth gaming.1ms response time – eliminate screen tearing and choppy frame rates.WQHD (2560 x 1440) – Game titles will even look better, displaying more details due to the WQHD (2560 x 1440) resolution.Wide Color Gamut – Game colors and details will look more realistic and refined, to push game immersion to its limits.Anti-Flicker and Less Blue Light – game even longer and prevent eye strain and fatique.Frameless design – Ultimate gameplay experience.178° wide view angle.1.5-way joystick navigator2.1x DC Jack3.2x HDMI 1.4b1x Display Port 1.2a4.5.1x Earphone out6.1x Kensington lockSPECIFICATIONBarcode Info EAN4719072720605 UPC824142220832 UCC1410824142220839Model Part No9S6-3DB51T-016 MKT Name Optix G32CQ4 MKT Spec Optix G32CQ4 SKU Number0Color ID1/Black-BlackDisplay Screen Size31.5" (80 cm)Active Display Area (mm)697.344(H) x 392.256(V)Curvature Curve 1500RPanel Type VAResolution2560x1440 (WQHD)Pixel pitch0.2724(H)X0.2724(V)Aspect Ratio16:9Dynamic Refresh Rate technology FreeSync PremiumHDR (High dynamic range)N/ASDR Brightness (nits)250Contrast Ratio3000:1DCR (Dynamic Contrast Ratio)100000000:1Signal Frequency70.56~243.38 KHz(H) / 48~165 Hz(V) Activated Range48Hz-165HzRefresh Rate165HZResponse Time (MPRT)1ms(MPRT)Response Time (Tr + Tf)TYP 14msView Angles178°(H)/178°(V)Surface Treatment Anti-glareNTSC (CIE1976 area percentage/overlap)100.1% / 86.6%NTSC (CIE1931 area percentage/overlap)85.66% / 80.30%sRGB (CIE1976 area percentage/overlap)114.8% / 97.6%sRGB (CIE1931 area percentage/overlap)120.94% / 99.4%Adobe RGB (CIE1976 area percentage/overlap)98.38% / 89.5%Adobe RGB (CIE1931 area percentage/overlap)89.64% / 83.7%DCI-P3 (CIE1976 area percentage/overlap)91.43% / 91.0%DCI-P3 (CIE1931 area percentage/overlap)89.15% / 88.9%Rec.709 (CIE1976 area percentage/overlap)114.8% / 97.6%Rec.709 (CIE1931 area percentage/overlap)120.94% / 99.4.0%Display Colors16.7MColor bit8 bitsNote_DP2560 x1440 (Up to 165Hz)Note_HDMI™2560 x 1440 (Up to 144Hz)Note_DVI N/AI/O Ports HDMI™2HDMI™ version 2.0HDMI™ HDCP version N/A DisplayPort1DisplayPort version 1.2a DisplayPort HDCP version N/A Thunderbolt version N/A Thunderbolt HDCP version N/A Headphone-out1Lock type Kensington LockI/O Ports (Front)Thunderbolt N/APower Power Supply Type External Adaptor 20V 3.25A Power Input100~240V, 50/60Hz Energy Efficiency Rating GAdapter's KC safety Number N/APower Cord Type N/AQC Output N/AQC Output Power N/APD Output N/APD Output Power N/AIn The Box DisplayPort Cable0 HDMI™ Cable1 DVI Cable0 USB Type A to Type B Cable0 USB Type C to Type A Cable N/A USB Type C to Type C Cable0 Thunderbolt Cable N/A VGA Cable0 3.5mm audio Cable0 3.5mm combo audio Cable0 Power Cord1 AC Adaptor1 Warranty Card1 Quick Guide1Design Adjustment (Tilt)-5° ~ 20°VESA Mounting100x100mm Frameless Design YesOuter Carton Dimension (WxDxH)Outer Carton Dimension (WxDxH) (mm)898 x 210 x 565 Outer Carton Dimension (WxDxH) (inch)35.35 x 8.27 x 22.24Product Dimension with Stand (WxDxH)Product Dimension with Stand (WxDxH) (mm)709.4 x 248.9 x 509.5 Product Dimension with Stand (WxDxH) (inch)27.93 x 9.8 x 20.06Product Dimension without Stand (WxDxH)Product Dimension without Stand (WxDxH) (mm)709.4 x 92.2 x 429.3 Product Dimension without Stand (WxDxH) (inch)27.93 x 3.63 x 16.9Stand Dimension (WxDxH)Stand Dimension (WxDxH) (mm)709.4 x 248.8 x 509.5 Stand Dimension (WxDxH) (inch)27.93 x 9.8 x 20.06Dimension & Weight Inside Carton Dimensions (WxDxH) (mm)883 x 195 x 540 Inside Carton Dimensions (WxDxH) (inch)34.76 x 7.68 x 21.26 Weight (Net kg) 6.4Weight (Gross kg)9.1Warranty Warranty36M。

戴尔 V313w 用户手册说明书

戴尔 V313w 用户手册说明书

Dell V313w 用户手册2010年8月 | 机器类型:4443型号:目录安全信息 (5)关于您的打印机 (6)感谢您选择此打印机! (6)使您的打印机对环境的影响最小 (6)查找有关打印机的信息 (7)了解打印机的部件 (9)订购和更换耗材 (11)订购打印墨盒 (11)更换打印墨盒 (11)回收Dell产品 (13)使用打印机操作面板按钮和菜单 (14)使用打印机操作面板 (14)将临时设置改变为新的默认设置 (15)改变节约能源时限 (16)使用经济模式节约纸张和能源 (16)恢复出厂默认设置 (17)使用打印机软件 (18)最小系统需求 (18)使用Windows打印机软件 (18)使用Macintosh(英文版)打印机软件 (20)查找并安装可选的软件 (21)升级打印机软件(仅限于Windows) (21)重新安装打印机软件 (22)装入纸张和文档原件 (24)装入纸张 (24)保存纸张默认设置 (27)将文档原件放置在扫描仪玻璃上 (28)打印 (29)打印提示 (29)打印基本文档 (29)打印特殊文档 (33)操作照片 (35)从蓝牙设备中进行打印 (40)在纸张的双面进行打印 (42)管理打印作业 (45)复印 (49)复印提示 (49)进行复印 (49)复印照片 (49)放大或缩小图像 (50)调整复印质量 (50)使复印结果较浅或者较深 (50)使用打印机操作面板进行逐份复印 (51)在一页纸上复制图像 (51)将多页文档复印到一张纸上 (51)进行双面复印 (52)取消复印作业 (53)扫描 (54)扫描提示 (54)扫描到本地或网络计算机 (54)扫描至闪存驱动器或存储卡 (55)扫描照片并发送到编辑应用程序中 (55)扫描文档并发送到编辑应用程序中 (56)使用打印机软件直接扫描至电子邮件 (57)扫描至PDF (57)扫描常见问答 (58)取消扫描作业 (59)网络 (60)在无线网络中安装打印机 (60)高级无线设置 (64)网络常见问答 (70)维护打印机 (81)维护打印墨盒 (81)清洗打印机的外壳 (83)擦洗扫描仪玻璃 (83)问题解答 (84)在您解决问题之前 (84)使用服务中心解决打印机问题 (84)如果问题解答没有解决您的问题 (84)安装问题解答 (84)卡纸和进纸错误问题解答 (90)打印问题解答 (93)复印和扫描问题解答 (95)存储卡问题解答 (97)无线问题解答 (98)通告 (115)产品信息 (115)版本通告 (115)能源消耗 (117)索引 (120)安全信息电源线所连接的电源插座与产品的距离不可太远,并且要符合使用方便的原则。

海尔Z24u G3 WUXGA USB-C显示器技术规格说明书

海尔Z24u G3 WUXGA USB-C显示器技术规格说明书

HP Z24u G3 WUXGA USB-C DisplayFront 1. Power buttonHP Z24u G3 WUXGA USB-C DisplayBack1. OSD control 8. USB Type-C™ port with DP Alt Mode 1.4, USB upstream data, andmaximum power delivery up to 100 W2. Security cable slot 9. RJ-45 (network) jack3. Master power switch 10. USB port4. Power connector 11. USB port (Battery charging 1.2, 7.5W)5. HDMI port 12. USB port6. DisplayPort™ connector13. USB port (Battery charging 1.2,7.5W)7. DisplayPort™ connector (out)Panel Specifications Display Size (Diagonal) 24"Panel Technology IPSRefresh Rate 60 HzPanel Bit Depth 8 bit (6bit + FRC)Aspect Ratio 16:10Brightness (Typical) 350 nitsContrast Ratio (Static) 1000:1Contrast Ratio Minimum (Static) 700:1Dynamic Contrast Ratio 10M:1Flicker Free YesPixel Pitch 0.270 (mm) x 0.270 (mm)Pixels Per Inch (PPI) 96 PPIBacklight Lamp Life Minimum (To Half30kBrightness - In Hours)Backlight Type Edge-litScreen Treatment Anti-glareHardness 3HHaze 25%Response Time (Typical) 5ms GtG (with overdrive)Horizontal Viewing Angle (Typical178°CR>10)Vertical Viewing Angle (Typical CR>10) 178°Panel Active Area (W x H) 518.4(H)*324.0(V)NOTE: Performance Specifications Represent The Typical Specifications Provided By HP's ComponentManufacturers; Actual Performance May Vary Either Higher Or Lower.ColorsRGB 99%DCI-P3 (P3 D65) 85%Color Management Factory Color Calibrated Yes (Delta E <=2)Calibrated Color Presets sRGB, BT.709, P3 D65RGB Channel Adjust Yes, GainDefault Color Temperature sRGBMonitor Specifications Bezel 4-sided Micro EdgeColor (Head) Turbo Silver; (Stand) Turbo SilverTilt -5 to +20°Swivel ±45°Pivot ±90Height Adjust Range 150mmVESA Mounting N/ASecurity Lock Ready Standard Security Lock SlotDetachable Stand YesWarranty (Number of Years) 3/3/0 for LA, NA, EMEA, APJ; (3/3/3 in select APJ Countries)Low Blue Light Mode Yes, HP Eye Ease (TÜV Low Blue Light Hardware Solutioncertified)Display Management Software HP Display CenterOn Screen Display Brightness +, Color, Image, Input, Power, Menu,Management, Information, Exit Native Resolution1WUXGA (1920 x 1200)1. Apply to high resolution and/or high frame rate displays only. Maximum Resolution 1920×1200 @ 60HZPreset Graphic Modes/Supported Resolutions Preset Graphic Modes 640 × 480@60Hz 800 × 600@60Hz 1024 × 768@60Hz 1280 × 800@60Hz 1280 × 1024@60Hz 1440 × 900@60Hz 1600 × 900@60Hz 1600 × 1200@60Hz 1680 × 1050@60Hz 1920 × 1080@60Hz 1920 × 1200@60Hz High Definition video 640*480p@60Hz 720*480p@60Hz 720*480i@60Hz720*576i@50Hz720*576p@50Hz 1280*720p@50Hz 1280*720p@60Hz 1920*1080i@50Hz 1920*1080i@60Hz 1920*1080p@50Hz 1920*1080p@60HzMinimum Vertical Scan Rate 50 HzMaximum Vertical Scan Rate 60 HzMinimum Horizontal Scan Rate 30.0 kHzMaximum Horizontal Scan Rate 80.0 kHzMaximum Pixel Clock 170 MHzUser Programmable Modes 10User-Assignable Function Buttons Yes, 4 buttonsLanguages 10 (English, Spanish, German, French, Italian, Netherlands,Portuguese, Japanese, T-Chinese and S-Chinese) Connector Types DisplayPort™ 1 DisplayPort™ 1.4DisplayPort™ Out 1 DisplayPort™ 1.4-outHDMI 1 HDMI 2.0USB Type-C™ Video Input 1 USB Type-C™ (DP Alt Mode 1.4, power delivery up to100W)USB- A 4 USB-A 3.2 Gen 1 (2 for battery charging 1.2, 7.5W)Ethernet YesSpecial Features Picture-in-Picture, Picture-by-Picture YesDaisyChain/DisplayPort Multi streamTransport (MST)YesUser Updateable Firmware YesPower & Operating Specs Power Supply InternalPower Source 100 – 240 VAC 50/60 Hz Power Consumption- MAX 160 WEnergy Saving/Stand By Mode 0.5 WPower Consumption- Typical 32 WPower Cable Length 1.9 mENERGY STAR Data Operational Mode at 100 VAC 18.7 WOperational Mode at 115 VAC 18.7 WOperational Mode at 230 VAC 18.7 WEU Energy EfficiencyClass (ERP Lot-5)On-mode Power Consumption 18.6 WAnnual Power Consumption 28 kWhEnergy Efficiency Class EOperating Conditions Operating Temperature - Celsius 5° – 35°COperating Temperature - Fahrenheit 41° – 95°FNon-operating Temperature - Celsius –34° – 60°CNon-operating Temperature -Fahrenheit29° – 140°FOperating Humidity 20 – 80% Relative Humidity (non-condensing)Non-operating Humidity 5 – 95%Operating Altitude 0 – 5,000 m (16,400 ft.)Non-operating Altitude 0 – 12.192 m (40,000 ft.)Environmental Features and Certifications Mercury-free LED display backlighting Yes, Mercury-free LED backlightingArsenic-Free Display Glass YesLow Halogen YesAgency Approvals And CertificationsWW applicationCE,CB,KC/KCC/NOM/PSB/EAC/GS/TUV-S/ISO 9241-307/Low Blue Light/ BIS/cTUVus/CCC/CEL/CECP/SEPA/EnergyStar/TCO/TCO CertifiedEdge/VCCI/FCC/BSMI/WEEE/UAE/Ukraine/ERP/ISC Microsoft WHQL Certification YesENERGY STAR® Certified YesEPEAT® RegisteredRegions need to verify by countryYesChina Energy Label CEL Grade 1TCO Certified Edge YesTCO Certified YesSmartWay Transport Partnership - NAonlyYes (NA sku)Contains Recycled Plastics Contains Recycled Plastics81.11%Recyclable Packaging (Box, packingmaterials)100% recyclable packaging.Unit Product/Package Specifications Product Dimensions(Unpacked with stand) (W x D x H)53.17 x 19.5 x 52.14 cm 20.93 x 7.68 x 20.53 in Product Dimensions(Packed) (W x D x H)62.5 x 41.5 x 14.2 cm 24.61 x 16.34 x 5.59 in Display Head Dimensions(Unpacked without stand) (W x D x H)53.17 x 3.85 x 34.29 cm 20.93 x 1.52 x 13.5 in Base Area Footprint(w x d mm)232 x 195 mm 9.13 x 7.7 inBezel Measurements - Metric Bottom Cover:521.33mm Bottom Cover:20.52 in Product Weight(Unpacked with stand)5.3 kg 11.69 lbProduct Weight(Packed)8.1 kg 17.86 lbProduct Weight(Head Only)4.03 kg 8.88 lbWhat's in the box? Documentation kitDP 1.4 Cable (1.8m)HDMI 2.0 cable (1.8m, Production after May’21)USB 3.2 Gen1 Type C to C (1.8m)Power cableVESA AdapterCable HolderUser Guide and Warranty Languages User Guide Languages English, Arabic, S. Chinese, T. Chinese, Czech, Danish,Dutch, Finnish, French, German, Greek, Hungarian, Italian,Japanese, Kazakh, Korean, Norwegian, Polish, BrazilianPortuguese, Russian, Slovenian, Spanish, Swedish andTurkish.Warranty Languages English, Arabic, S. Chinese, T. Chinese, Czech, Danish,Dutch, Finnish, French, German, Greek, Hungarian, Italian,Japanese, Kazakh, Korean, Norwegian, Polish, BrazilianPortuguese, Russian, Slovenian, Spanish, Swedish andTurkish.Copyright © 2021 HP Development Company, L.P.The information contained herein is subject to change without notice. The only warranties for HP products are set forth in the express limited warranty statements accompanying such products. Nothing herein should be construed as constituting an additional warranty. HP shall not be liable for technical or editorial errors or omissions contained herein.Microsoft and Windows are registered trademarks or trademarks of Microsoft Corporation in the U.S. and/or other countries. ENERGY STAR is a registered trademark owned by the U.S. Environmental Protection Agency.QuickSpecs HP Z24u G3 WUXGA USB-C Display Change Logc07029156 — Worldwide — Version 5 — June 24, 2021 Page 11。

G.726 Encoder Decoder (v1.10) 的 PDF 文件说明书

G.726 Encoder Decoder (v1.10) 的 PDF 文件说明书

CONFIGURATION
Encoder – 40 kbps rate
Configuration Table
Decoder – 40 kbps rate
Full Duplex – 40 kbps rate
ID G726_001 G726_002 G726_003
Table 2.
Cycles Information – DM6437 EVM with Code Generation Tools version 6.0.7
• RTP Special packing format as defined in
RFC3551 and linear packing format supported
• Fully interruptible Code
• Efficient scratch memory management with
1.078
4 All memory requirements are expressed in kilobytes (1 K-byte = 1024 bytes) 5 Does not include I/O 3 0.113 0.227
2
G.726 Encoder/Decoder (v1.10) on C64x+
G.726 Encoder/Decoder (v1.10) on C64x+
SPRS320 - OCTOBER 2007
description
The ITU G.726 converts A-law or U-law PCM input samples sampled at 8 KHz sampling rate into a 40, 32, 24, or 16 kbps ADPCM bit-stream.

Inspiron 3493 服务手册说明书

Inspiron 3493 服务手册说明书

Inspiron 3493服务手册注、小心和警告: “注”表示帮助您更好地使用该产品的重要信息。

: “小心”表示可能会损坏硬件或导致数据丢失,并说明如何避免此类问题。

: “警告”表示可能会造成财产损失、人身伤害甚至死亡。

© 2019 Dell Inc. 或其子公司。

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W3EG264M72EFSU403D4资料

W3EG264M72EFSU403D4资料

ADVANCED*W3EG264M72EFSUxxxD4White Electronic Designs1GB – 2x64Mx72 DDR SDRAM, UNBUFFERED, FBGAFEATURESFast data transfer rate: PC-2100, PC-2700 andPC3200 Clock speeds of 133 MHz, 166 MHz and 200MHz Supports ECC error detection and correction Bi-directional data strobes (DQS) Differential clock inputs (CK & CK#)Programmable Read Latency 3 and 4 (clock) Programmable Burst Length (2, 4 or 8)Programmable Burst type (sequential & interleave) Edge aligned data output, center aligned data input Auto and self refreshSerial presence detect (SPD) with EEPROM Dual RankV CC = V CCQ = +2.6V (200MHz) V CC = V CCQ = +2.5V (133 and 166MHz) Gold edge contactsJEDEC standard 200 pin, small-outline, SO-DIMMpackage•PCB height option: 31.75 mm (1.25”)NOTE: C onsult factory for availability of:• RoHS compliant products • Vendor source control options • Industrial temperature optionDESCRIPTIONThe W3EG264M72EFSU is a 2x64Mx72 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM components. The module consists of eighteen 64Mx8 DDR SDRAMs in FBGA packages mounted on a 200 pin FR4 substrate.Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges and Burst Lengths allow the same device to be useful for a variety of high bandwidth, high performance memory system ap p li c a t ions.* T his product is under development, is not qualifi ed or characterized and is subject to change or cancellation without notice.OPERATING FREQUENCIESDDR400@CL=3DDR333@CL=2.5DDR266@CL=2DDR266@CL=2.5Clock Speed 200MHz 166MHz 133MHz 133MHz CL-t RCD -t RP3-3-32.5-3-32-2-22.5-3-3W3EG264M72EFSUxxxD4White Electronic DesignsADVANCEDPIN NAMESSymbolDescription WE#, CAS#, RAS#Command Input CK0, CK0#CK1, CK1#CK2, CK2#Clock InputCKE0-CKE1Clock Enable Input S0#-S1#Chip Select Input BA0, BA1Bank Address A0-A12Address input SCL Serial ClockSA0-SA2Presence Detect Address Input SDA Input/Output: Serial Presence-Detect Data DM0-DM8Data Write Mask DQS0-DQS8Data StrobeCB0-CB7Input/Output: Check BitsDQ0-DQ63Input/Output: Data I/Os, Data bus V REF Supply: SSTL_2 reference voltage V CC Supply: Power Supply: +2.5V ±0.2VV SS Supply: GroundV CCSPD Supply: Serial EEPROM Positive Power Supply NC No Connect DNUDo Not UsePIN CONFIGURATIONPIN#SYMBOL PIN#SYMBOL PIN#SYMBOL PIN#SYMBOL1V REF51V SS 101A9151DQ422V REF 52V SS 102A8152DQ463V SS53DQ19103V SS 153DQ434V SS 54DQ23104V SS 154DQ475DQ055DQ24105A7155V CC 6DQ456DQ28106A6156V CC 7DQ157V CC 107A5157V CC 8DQ558V CC 108A4158CK1#9V CC 59DQ25109A3159V SS 10V CC 60DQ29110A2160CK111DQS061DQS3111A1161V SS 12DM062DM3112A0162V SS 13DQ263V SS 113V CC 163DQ4814DQ664V SS 114V CC 164DQ5215V SS65DQ26115A10165DQ4916V SS 66DQ30116BA1166DQ5317DQ367DQ27117BA0167V CC 18DQ768DQ31118RAS#168V CC 19DQ869V CC 119WE#169DQS620DQ1270V CC 120CAS#170DM621V CC 71CB0121S0#171DQ5022V CC 72CB4122S1#172DQ5423DQ973CB1123NC 173V SS 24DQ1374CB5124NC 174V SS 25DQS175V SS 125V SS 175DQ5126DM176V SS 126V SS 176DQ5527V SS 77DQS8127DQ32177DQ5628V SS 78DM8128DQ36178DQ6029DQ1079CB2129DQ33179V CC 30DQ1480CB6130DQ37180V CC 31DQ1181V CC 131V CC 181DQ5732DQ1582V CC 132V CC 182DQ6133V CC 83CB3133DQS4183DQS734V CC 84CB7134DM4184DM735CK085NC 135DQ34185V SS 36V CC 86DNU 136DQ38186V SS 37CK0#87V SS 137V SS 187DQ5838V SS 88V SS 138V SS 188DQ6239V SS 89CK2139DQ35189DQ5940V SS 90V SS 140DQ39190DQ6341DQ1691CK2#141DQ40191V CC 42DQ2092V CC 142DQ44192V CC 43DQ1793V CC 143V CC 193SDA 44DQ2194V CC 144V CC 194SA045V CC 95CKE1145DQ41195SCL 46V CC 96CKE0146DQ45196SA147DQS297NC 147DQS5197V CCSPD 48DM298NC 148DM5198SA249DQ1899A12149V SS 199NC 50DQ22100A11150V SS 200V SSWhite Electronic DesignsW3EG264M72EFSUxxxD4ADVANCED FUNCTIONAL BLOCK DIAGRAMWhite Electronic DesignsW3EG264M72EFSUxxxD4ADVANCEDDC ELECTRICAL CHARACTERISTICSPARAMETER/CONDITION SYMBOL MIN MAX UNITS Supply Voltage V CC 2.3 2.7VI/O Supply Voltage V CCQ 2.3 2.7VI/O Reference Voltage V REF0.49 × V CCQ0.51 × V CCQ VI/O Termination Voltage (system)V TT V REF - 0.04V REF + 0.04VInput High (Logic 1) Voltage V IH V REF + 0.15V CC + 0.3VInput Low (Logic 0) Voltage V IL-0.3V REF - 0.15VHigh Current (V OUT = V CCQ - 0.373V, minimum V REF, minimum V TT)V OH-16.8—mALow Current (V OUT = 0.373V, maximum V REF, maximum V TT)V OL16.8—mACAPACITANCEPARAMETER SYMBOL MAX UNITSInput/Output Capacitance: DQ, DQS,DM C I012pFInput Capacitance: Command and Address C I147pFInput Capacitance: CK, CK#,C I225pFInput Capacitance: CKE, S#C I325pFW3EG264M72EFSUxxxD4 White Electronic DesignsADVANCEDI DD SPECIFICATIONS AND CONDITIONS0°C ≤ T A ≤ +70°C; V CC, V CCQ = +2.5V ±0.2VDDR400: V CC = V CCQ = +2.6V ±0.2VMAXPARAMETER/CONDITION SYM DDR400@CL=3DDR333@CL=2.5DDR266@CL=2DDR266@CL=2.5UNITSOPERATING CURRENT: One device bank; Active-Precharge; t RC = t RC (MIN); t CK = t CK(MIN); DQ, DM and DQS inputs changing once per clock cycle; Address and control inputschanging once every two clock cyclesI DD02475207020701845mAOPERATING CURRENT: One device bank; Active-Read-Precharge; Burst = 4; t RC = t RC(MIN); t CK = t CK (MIN); IOUT = 0mA; Address and control inputs changing once per clockcycleI DD12745234023402115mAPRECHARGE POWER-DOWN STANDBY CURRENT: All device banks idle; Power-downmode; t CK = t CK (MIN); CKE = (LOW)I DD2P90909090mAIDLE STANDBY CURRENT: CS# = HIGH; All device banks are idle; t CK = t CK (MIN); CKE =HIGH; Address and other control inputs changing once per clock cycle. VI N = V REF for DQ,DQS, and DMI DD2F990810810720mAACTIVE POWER-DOWN STANDBY CURRENT: One device bank active; Power-downmode; t CK = t CK (MIN); CKE = LOWI DD3P810630630540mAACTIVE STANDBY CURRENT: CS# = HIGH; CKE = HIGH; One device bank active; t RC =t RAS (MAX); t CK = t CK (MIN); DQ, DM and DQS inputs changing twice per clock cycle; Addressand other control inputs changing once per clock cycleI DD3N1080900900810mAOPERATING CURRENT: Burst = 2; Reads; Continuous burst; One device bank active;Address and control inputs changing once per clock cycle; t CK = t CK (MIN); I OUT = 0mAI DD4R2790238523852115mAOPERATING CURRENT: Burst = 2; Writes; Continuous burst; One device bank active;Address and control inputs changing once per clock cycle; t CK = t CK (MIN); DQ, DM, and DQSinputs changing twice per clock cycleI DD4W2790229522952025mAAUTO REFRESH BURST CURRENT:t REFC = t RFC (MIN)I DD54185351035103330mA SELF REFRESH CURRENT: CKE ≤ 0.2V I DD690909090mA OPERATING CURRENT: Four device bank interleaving READs (Burst = 4) with autoprecharge, t RC = minimum t RC allowed; t CK = t CK (MIN); Address and control inputs changeonly during Active READ, or WRITE commandsI DD75130454545453960mAWhite Electronic DesignsW3EG264M72EFSUxxxD4ADVANCEDDDR SDRAM COMPONENT ELECTRICAL CHARACTERISTICS AND RECOMMENDED ACOPERATING CONDITIONS0°C ≤ T A ≤ +70°C; V CC = V CCQ = +2.5V ±0.2VAC CHARACTERISTICS403335262265PARAMETER SYMBOL MIN MAX MIN MAX MIN MAX MIN MAXUNITS NOTES Access window of DQs from CK/CK#t AC-0.65+0.65-0.70+0.70-0.75+0.75-0.750.75nsCK high-level width t CH0.450.550.450.550.450.550.450.55t CK26 CK low-level width t CL0.450.550.450.550.450.550.450.55t CK26 Clock cycle time CL = 3t CK (3)510ns39, 44CL = 2.5t CK (2.5)6137.5137.513ns39, 44CL = 2t CK (2)7.5137.5137.5/1013ns39, 44 DQ and DM input hold time relative to DQS t DH0.400.450.50.5ns23, 27 DQ and DM input setup time relative to DQS t DS0.400.450.50.5ns23, 27 DQ and DM input pulse width (for each input)t DIPW 1.75 1.75 1.75 1.75ns27 Access window of DQS from CK/CK#t DQSCK-0.55+0.55-0.60+0.60-0.75+0.75-0.75+0.75nsDQS input high pulse width t DQSH0.350.350.350.35t CKDQS input low pulse width t DQSL0.350.350.350.35t CKDQS-DQ skew, DQS to last DQ valid, per group, pert DQSQ0.40.40.50.5ns22, 23 accessWrite command to fi rst DQS latching transition t DQSS0.72 1.250.75 1.250.75 1.250.75 1.25t CKDQS falling edge to CK rising - setup time t DSS0.200.200.200.2t CKDQS falling edge from CK rising - hold time t DSH0.200.200.200.2t CKHalf clock period t HP t CH,t CL t CH,t CL t CH,t CL t CH, t CL ns30 Data-out high-impedance window from CK/CK#t HZ+0.65+0.70+0.75+0.75ns16, 36 Data-out low-impedance window from CK/CK#t LZ-0.65+0.65-0.70-0.75-0.75ns16, 36 Address and control input hold time (fast slew rate)t IHF0.600.750.900.90ns12 Address and control input setup time (fast slew rate)t ISF0.600.750.900.90ns12 Address and control input hold time (slow slew rate)t IHS0.80.811ns12White Electronic DesignsW3EG264M72EFSUxxxD4ADVANCEDDDR SDRAM COMPONENT ELECTRICAL CHARACTERISTICS AND RECOMMENDEDAC OPERATING CONDITIONS (Continued)0°C < T A <+70°C; V CC = V CCQ = +2.5V ±0.2VAC CHARACTERISTICS403335262265RAMETER SYMBOL MIN MAX MIN MAX MIN MAX MIN MAXUNITS NOTES Address and control input setup time (slow slew rate)t ISS0.80.811ns12Address and Control input pulse width (for eacht IPW 2.2 2.2 2.2 2.2nsinput)LOAD MODE REGISTER command cycle time t MRD12121515nst QH t HP - t QHS t HP - t QHS t HP - t QHS t HP - t QHS ns22, 23 DQ-DQS hold, DQS to fi rst DQ to go non-valid, peraccessData hold skew factor t QHS0.500.500.750.75nsACTIVE to PRECHARGE command t RAS4070,0004270,00040120,00040120,000ns30, 47 ACTIVE to READ with Auto precharge command t RAP15181520nsACTIVE to ACTIVE/AUTO REFRESH commandt RC55606065nsperiodAUTO REFRESH command period t RFC70727578ns42 ACTIVE to READ or WRITE delay t RCD15181520ns PRECHARGE command period t RP15181520nsDQS read preamble t RPRE0.9 1.10.9 1.10.9 1.10.9 1.1t CK37 DQS read postamble t RPST0.40.60.40.60.40.60.40.6t CK37 ACTIVE bank a to ACTIVE bank b command t RRD10121515nsDQS write preamble t WPRE0.250.250.250.25t CKDQS write preamble setup time t WPRES0000ns18,19 DQS write postamble t WPST0.40.60.40.60.40.60.40.6t CK17 Write recovery time t WR15151515nsInternal WRITE to READ command delay t WTR1111t CKData valid output window NA t QH -t DQSQ t QH -t DQSQ t QH -t DQSQ t QH - t DQSQ ns22 REFRESH to REFRESH command interval t REFC70.370.370.370.3µs21 Average periodic refresh interval t REFI7.87.87.87.8µs21 Terminating voltage delay to VDD t VTD0000nsExit SELF REFRESH to non-READ command t XSNR75757575nsExit SELF REFRESH to READ command t XSRD200200200200t CKW3EG264M72EFSUxxxD4 White Electronic DesignsADVANCED Notes1. All voltages referenced to V SS.2. Tests for AC timing, I DD, and electrical AC and DC characteristics may be conductedat nominal reference/supply voltage levels, but the related specifi cations and device operation are guaranteed for the full voltage range specifi ed.3. Outputs measured with equivalent load:Output(V OUT)4. AC timing and I DD tests may use a V IL-to-V IH swing of up to 1.5V in the testenvironment, but input timing is still referenced to V REF (or to the crossing point for CK/CK#), and parameter specifi cations are guaranteed for the specifi ed AC input levels under normal use conditions. The mini-mum slew rate for the input signals used to test the device is 1V/ns in the range between V IL(AC) and V IH(AC).5. The AC and DC input level specifi cations are as defi ned in the SSTL_2 Standard(i.e., the receiver will effectively switch as a result of the signal crossing the AC inputlevel, and will remain in that state as long as the signal does not ring back above [below] the DC input LOW [HIGH] level).6. V REF is expected to equal V DDQ/2 of the transmitting device and to track variations inthe DC level of the same. Peak-to-peak noise (non-common mode) on V REF may not exceed ±2 percent of the DC value. Thus, from V DDQ/2, V REF is allowed ±25mV for DC error and an additional ±25mV for AC noise. This measurement is to be taken at the nearest V REF bypass capacitor.7. V TT is not applied directly to the device. V TT is a system supply for signal terminationresistors, is expected to be set equal to V REF and must track variations in the DC level of V REF.8. I DD is dependent on output loading and cycle rates. Specifi ed values are obtainedwith mini-mum cycle time at CL = 2 for -262, and -26A, CL = 2.5 for-335 and -265 with the outputs open.9. Enables on-chip refresh and address counters.10. I DD specifi cations are tested after the device is properly initialized, and is averagedat the defi ned cycle rate.11. This parameter is sampled. V CC = +2.5V ±0.2V, V CCQ = +2.5V ±0.2V, V REF = V SS, f= 100 MHz, T A = 25°C, V OUT(DC) = V CCQ/2, V OUT (peak to peak) = 0.2V. DM input is grouped with I/O pins, refl ecting the fact that they are matched in loading.12. For slew rates < 1 V/ns and ≥ to 0.5 Vns. If the slew rate is < 0.5V/ns, timing mustbe derated: tIS has an additional 50ps per each 100 mV/ns reduction in slewrate from 500mV/ns, while t IH is unaffected. If the slew rate exceeds 4.5 V/ns,functionality is uncertain. For -335, slew rates must be 0.5 V/ns.13. The CK/CK# input reference level (for timing referenced to CK/CK#) is the point atwhich CK and CK# cross; the input reference level for signals other than CK/CK# is V REF.14. Inputs are not recognized as valid until V REF stabilizes. Exception: during the periodbefore V REF stabilizes, CKE < 0.3 x V CCQ is recognized as LOW.15. The output timing reference level, as measured at the timing reference pointindicated in Note 3, is V TT.16. t HZ and t LZ transitions occur in the same access time windows as valid datatransitions. These parameters are not referenced to a specifi c voltage level, butspecify when the device output is no longer driving (HZ) or begins driving (LZ).17. The intent of the Don’t Care state after completion of the postamble is the DQS-driven signal should either be high, low, or high-Z and that any signal transitionwithin the input switching region must follow valid input requirements. That is, ifDQS transitions high (above V IH DC (MIN) then it must not transition low (below V IH DC) prior to t DQSH (MIN).18. This is not a device limit. The device will operate with a negative value, but systemperformance could be degraded due to bus turnaround.19. It is recommended that DQS be valid (HIGH or LOW) on or before the WRITEcommand. The case shown (DQS going from High-Z to logic LOW) applies when no WRITEs were previously in progress on the bus. If a previous WRITE was in progress, DQS could be HIGH during this time, depending on t DQSS.20. MIN (t RC or t RFC) for I DD measurements is the smallest multiple of t CK that meetsthe minimum absolute Value for the respective parameter. t RAS (MAX) for I DDmeasurements is the largest multiple of t CK that meets the maximum absolute value for t RAS.21. The refresh period 64ms. This equates to an aver-age refresh rate of 7.8125µs.However, an AUTO REFRESH command must be asserted at least once every70.3µs; burst refreshing or posting by the DRAM controller greater than eightrefresh cycles is not allowed.22. The valid data window is derived by achieving other specifi cations: t HP (t CK/2), t DQSQ,and t QH (t QH = t HP - t QHS). The data valid window derates directly porportional with the clock duty cycle and a practical data valid window can be derived. The clock is allowed a maximum duty cycle variation of 45/55, beyon which functionality is uncertain. Figure 7, Derating Data Valid Window, shows derating curves for duty cycles ranging between 50/50 and 45/55.23. Each byte lane has a corresponding DQS.24. This limit is actually a nominal value and does not result in a fail value. CKE isHIGH during REFRESH command period (t RFC [MIN]) else CKE is LOW (i.e., during standby).25. To maintain a valid level, the transitioning edge of the input must:a. S ustain a constant slew rate from the current AC level through to the target AClevel, V IL(AC) or V IH(AC).b. R each at least the target AC level.c. A fter the AC target level is reached, continue to maintain at least the target DClevel, V IL(DC) or V IH(DC).26. JEDEC specifi es CK and CK# input slew rate must be ≥ 1V/ns (2V/ns differentially).27. DQ and DM input slew rates must not deviate from DQS by more than 10 percent.If the DQ/ DM/DQS slew rate is less than 0.5V/ns, timing must be derated: 50ps must be added to t DS and t DH for each 100mv/ns reduction in slew rate. If slew rate exceeds 4V/ns, functionality is uncertain. For -335, slew rates must be ≥ 0.5 V/ns.28. V CC must not vary more than 4 percent if CKE is not active while any bank is active.29. The clock is allowed up to ±150ps of jitter. Each timing parameter is allowed to varyby the same amount. t HP min is the lesser of t CL minimum and t CH minimum actually applied to the device CK and CK# inputs, collectively during bank active.30. READs and WRITEs with auto precharge are not allowed to be issued untilt RAS(MIN) can be satisfi ed prior to the internal precharge command being issued. 31. Any positive glitch must be less than 1/3 of the clock and not more than +400mV or2.9V, which-ever is less. Any negative glitch must be less than 1/3 of the clock cycleand not exceed either - 300mV or 2.2V, whichever is more positive.W3EG264M72EFSUxxxD4 White Electronic DesignsADVANCED32. Normal Output Drive Curves:a. T he full variation in driver pull-down current from minimum to maximum process,temperature and voltage will lie within the outer bounding lines of the V-I curve of Figure 8, Pull-Down Characteristics.b. T he variation in driver pull-down current within nominal limits of voltage andtemperature is expected, but not guaranteed, to lie within the inner boundinglines of the V-I curve of Figure 8, Pull-Down Characteristics.c. T he full variation in driver pull-up current from minimum to maximum process,temperature and voltage will lie within the outer bounding lines of the V-I curve of Figure 9, Pull-Up Characteristics.d. T he variation in driver pull-up current within nominal limits of voltage andtemperature is expected, but not guaranteed, to lie within the inner boundinglines of the V-I curve of Figure 9, Pull-Up Characteristics.e. T he full variation in the ratio of the maximum to minimum pull-up and pull-downcurrent should be between 0.71 and 1.4, for device drain-to-source voltages from0.1V to 1.0V, and at the same voltage and temperature.f. T he full variation in the ratio of the nominal pull-up to pull-down current should beunity ±10 percent, for device drain-to-source voltages from 0.1V to 1.0V.33. The voltage levels used are derived from a mini-mum V CC level and the referencedtest load. In practice, the voltage levels obtained from a properly terminated bus will provide signifi cantly different voltage values.34. V IH overshoot: V IH (MAX) = V CCQ + 1.5V for a pulse width < 3ns and the pulse widthcan not be greater than 1/3 of the cycle rate. V IL undershoot: V IL (MIN) = -1.5V for a pulse width !5 3ns and the pulse width can not be greater than 1/3 of the cycle rate.35. V CC and V CCQ must track each other.36. t HZ (MAX) will prevail over t DQSCK (MAX) + t RPST (MAX) condition. t LZ (MIN) willprevail over t DQSCK (MIN) + t RPRE (MAX) condition.37. t RPST end point and t RPRE begin point are not referenced to a specifi c voltage levelbut specify when the device output is no longer driving (t RPST), or begins driving(t RPRE).38. During Initialization, V CCQ, V TT, and V REF must be equal to or less than V CC + 0.3V.Alternatively, V TT may be 1.35V maximum during power up, even if V CC/V CCQ are0.0V, provided a minimum of 42 0 of series resistance is used between the V TTsupply and the input pin.39. The current part operates below the slowest JEDEC operating frequency of 83 MHz.As such, future die may not refl ect this option.40. Random addressing changing and 50 percent of data changing at every transfer.41. Random addressing changing and 100 percent of data changing at every transfer.42. CKE must be active (high) during the entire time a refresh command is executed.That is, from the time the AUTO REFRESH command is registered, CKE must be active at each rising clock edge, until t REF later.43. I DD2N specifi es the DQ, DQS, and DM to be driven to a valid high or low logic level.I DD2Q is similar to I DD2F except I DD2Q specifi es the address and control inputs toremain stable. Although I DD2F, I DD2N, and I DD2Q are similar, I DD2F is “worst case.”44. Whenever the operating frequency is altered, not including jitter, the DLL is requiredto be reset. This is followed by 200 clock cycles.45. Leakage number refl ects the worst case leakage possible through the module pin,not what each memory device contributes.46. When an input signal is HIGH or LOW, it is defi ned as a steady state logic HIGH orLOW.47. The -335 speed grade will operate with t RAS (MIN) = 40ns and t RAS (MAX) =120,000ns at any slower frequency.W3EG264M72EFSUxxxD4White Electronic DesignsADVANCED* ALL DIMENSIONS ARE IN MILLIMETERS AND (INCHES)200-PIN DDR SO-DIMM DIMENSIONSORDERING INFORMATION FOR D4Part NumberSpeed CAS Latencyt RCD t RP Height*W3EG264M72EFSU403D4200MHz/400Mbps 33331.75 (1.25") MAX W3EG264M72EFSU335D4166MHz/333Mbps 2.53331.75 (1.25") MAX W3EG264M72EFSU262D4133MHz/266Mbps 22231.75 (1.25") MAX W3EG264M72EFSU265D4133MHz/266Mbps2.53331.75 (1.25") MAXNOTES:• Consult Factory for availability of RoHS compliant products. (G = RoHS Compliant) • V endor specifi c part numbers are used to provide memory components source control. The place holder for this is shown as lower case “x” in the part numbers above and is to bereplaced with the respective vendors code. Consult factory for qualifi ed sourcing options. (M = Micron, S = Samsung & consult factory for others) • Consult factory for availability of industrial temperature (-40°C to 85°C) optionWhite Electronic DesignsW3EG264M72EFSUxxxD4ADVANCEDPART NUMBERING GUIDEW 3 E G 264M 72 E F S U xxx D4WEDCMEMORYDDRGOLDDEPTH (Dual Rank)BUS WIDTHx8FBGA2.5VUNBUFFEREDSPEED (MHz)PACKAGE 200 PINWhite Electronic DesignsW3EG264M72EFSUxxxD4ADVANCEDDocument Title1GB – 2x64Mx72 DDR SDRAM, UNBUFFERED, FBGARevision HistoryRev #History Release Date StatusRev 0Created9-04Advanced。

华硕 CELSIUS W360 工作站数据手册说明书

华硕 CELSIUS W360 工作站数据手册说明书

CELSIUS W360Your gateway to workstation power Data SheetIssue: November 2009CELSIUS W360The CELSIUS W Series is the versatile all-round workstation for price-conscioususers. Offering entry workstation performance, the CELSIUS W360 is your choicefor business segments, such as CAD/CAE, simulation, virtual reality, digital contentcreation and finance. The ISV certification process enables workstation users to runtheir preferred applications with maximum system stability.Extremely powerful workstationsGet more done in less timeFastest available processors, graphics and hard disk drivesNoise-reduced systemSilent working enviromentOptimized thermal management, low-noise chassis and silent fansServiceabilityMinimum downtime if system failureService-friendly system designLeading workstation application certificationMaximum compatibility and performance with customer-preferred applicationsFull support for ISV applications and easy integration into existing ITenvironmentsBuilt to orderFree configurability for all product linesCustomer is given a system optimized for his requirementsComponentsHard disk notes One Gigabyte equals one billion bytes, when referring to hard disk drive capacity.Base unit CELSIUS W360MainboardMainboard type D2587Formfactor BTXChipset Intel® Q35Processor socket LGA 775Processor quantity maximum1Memory slots 4 DIMM (DDR2)Supported capacity RAM (max.)8 GBMemory notes In configurations with 4 GB and more the visible memory may be reduced toapproximately 3.5 GB or less (for 32-bit operating systems) and configurations with 8GB the visible memory may be reduced to approximately 7.5 GB or less (depending onsystem configuration).LAN Built-in 10/100/1000 MBit/s Intel® 82566 DMWLAN optionalAudio codec Realtek ALC262Audio features High Definition audioI/O ControllerSerial ATA total6thereof eSATA1, optionalSATA RAID support0, 1, 10, 5, 50Audio: headphone outAudio: in (rear)2Audio: out (rear)1DVI optionaleSATA1, optionalEthernet (RJ-45)1FireWire (IEEE1394)2, optionalFront Audio: in1Front Audio: out1Internal speakers1Mouse / Keyboard (PS/2)2Parallel1, optionalSerial (RS-232) 1 (9 pin)USB front2USB internal2USB rear8USB 2.0 total12VGA1Drive baysDrive bays total83.5-inch internal bays43.5-inch external bays25.25-inch external bays2SlotsPCI-Express x16 1 x (312 mm) full heightPCI-Express x4 (mech. x8) 1 x (312 mm) full heightPCI-Express x1 1 x (312 mm) full heightPCI (32-bit / 33 MHz) 4 x (312 mm) full heightGraphics brand nameRefresh rate 1024 x 768/(recommended / max.)Refresh rate 1280 x 1024(recommended / max.)/Refresh rate 1600 x 1200(recommended / max.)/Graphics notes For some configurations third party drivers are currently not available or configurationrestrictions may apply.Electrical valuesOperating voltage range100 - 240 VOperating line frequency range50 - 60 HzMax. output of power supply300 WNoise emissionIdle mode21 dBOffice mode21 dBNoise notes / description depending on configurationDimension (W x D x H)203 x 426 x 442 mmOperating position Vertical / horizontalWeight16 kgWeight notes Weight may vary depending on actual configurationOperating ambient temperature15 - 35°COperating relative humidity10 - 75 %ProductGermany GSEurope CEUSA/Canada cCSAusFCC Class BGlobal RoHS (Restriction of hazardous substances)Medical certificationSecurityPhysical security Kensington Lock supportEye for padlockOptional: Integrated cabinet lockSeal optionIntrusion switchSystem security Write protect option for the Flash EPROMEmbedded security (TPM 1.2) - InfineonDisable / Hide TPM optionUser security Optional: Access protection via internal SmartCard readerHard disk passwordUser and supervisor BIOS passwordOptional: SmartCase Logon+Operating system preinstalledOperating system optional preinstalled Microsoft® Windows Vista® Business 64-bit Microsoft® Windows Vista® Business 32-bitOperating system compatible Microsoft® Windows® XP Professional x64 EditionMicrosoft® Windows® XP ProfessionalLinuxOperating system notes RedHat / Novell certificationFor some configurations third party drivers are currently not available or configurationrestrictions may apply.Additional SoftwareAdditional software (optional)Drivers & Utilities DVD (DUDVD)Recovery DVDTwinLoadWindows® XP downgrade packNorton Internet Security (incl. Firewall)Additional software (included as a CD/DVD)Drivers & Utilities DVD (DUDVD) Windows Vista®Norton Internet Security (incl. Firewall)ManageabilityManageability features Intel® vPro™ technologyManageabilityManageability type DeskView 10Manageability link /manageabilityInput device / componentsOptical USB tilt wheel mouseInput devices (optional)Optical USB/PS2 tilt wheel mouseSpace Explorer USBSpace Navigator USBSpace Pilot USBWarrantyMaintenance and Support Services - the perfect extensionRecommended Service5x9, Response Time: Next Business DayService Weblink /SupportserviceInformation about environmental care, policies, programs and our Environmental Guideline FSC 03230: /aboutusTake back and Recycling information:/recyclingAll rights reserved, including intellectual property rights. Changes to technical data reserved. Delivery subject to availability. Any liability that the data and illustrations are complete, actual or correct is excluded.Designations may be trademarks and/or copyrights of the respective manufacturer, the use of which by third parties for their own purposes may infringe the rights of such owner.For further information see /terms_of_use.htmlCopyright © Fujitsu Technology Solutions November 2009Published byFujitsu Technology Solutions 。

IBM磁带产品详细参数

IBM磁带产品详细参数
3573F3S(Express Model,PN)包括IBM LTO Ultrium 3的4 Gbps光纤通道磁带驱动器,机架安装盒
3573L4S(高容量,PN)包括IBM LTO Ultrium 4 LVD Ultra160连接,SCSI磁带驱动器
3573F4S(高容量,PN)包括IBM LTO Ultrium 4的4 Gbps光纤通道磁带驱动器
使用LTO Ultrium 3每个磁带库的容量最高可达38.40TB(压缩);本机容量达19.20TB
数据传输速率
使用全高型和半高型LTO Ultrium 4技术,本机数据传输速率可达120MBps
使用全高型LTO Ultrium 3技术,本机数据传输速率可达80MBps
使用半高型LTO Ultrium 3技术,本机数据传输速率可达60MBps
操作系统支持
为IBM System p®、IBM System i®、IBM System x、Windows Server 2003、Sun Solaris、HP-UX、Red Hat和United Linux提供本机设备驱动程序支持。
TS3310
3576 L5B型
3576 L5B型和4个E9U型
1-4
磁带盒数量
48
I/O插槽数量
3
物理容量
使用LTO Ultrium 4每个磁带盒最高可达1.60TB(压缩);本机为800GB
使用LTO Ultrium 3每个磁带盒最高可达800GB(压缩);本机容量达400GB
使用LTO Ultrium 4每个磁带库的容量最高可达76.80TB(压缩);本机容量达38.40TB
热插拔组件
电源、磁带驱动器
RAID支持

系统管理

戴尔W2606C 26英寸宽屏液晶显示器(带电视功能)设置指南说明书

戴尔W2606C 26英寸宽屏液晶显示器(带电视功能)设置指南说明书

VGA DVI TV AV1 () AV2 (S) AV3 () AV4 (D4) AV SIDE () AV SIDE (S)
VGA
DVI
ANT/Cable
-
-
S
-
D4
-
-
S
Select the proper input source based on which
ANT/Cable
connectors you used.
AV SIDE (COMPOSITE 1)- Composite connector on the side of the wide LCD monitor
AV SIDE (S-VIDEO 1) - S-Video connector on the side of the wide LCD monitor
Connect your computer using the VGA and audio cables.
DVI-D
DVD
DVD
Connect cable TV box using Connect your computer using the coaxial cable. the DVI and audio cables.
Reproduction in any manner whatsoever without the written permission of Dell Inc. is strictly forbidden.
Dell and the DELL logo are trademarks of Dell Inc. Dell disclaims proprietary interest in the marks and names of others.
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White Electronic DesignsW3EG7264S-JD3-D3PRELIMINARY*Double-data-rate architectureDDR200, DDR266, DDR333 and DDR400• JEDEC design specifi cations Bi-directional data strobes (DQS) Differential clock inputs (CK & CK#) Programmable Read Latency 2,2.5 (clock) Programmable Burst Length (2,4,8)Programmable Burst type (sequential & interleave) Edge aligned data output, center aligned data input. Auto and self refresh Serial presence detectPower supply: DDR333, 266, 200: V CC = V CCQ = +2.5V ± 0.2V; DDR400: V CC = V CCQ = +2.6V ± 0.1V JEDEC standard 184 pin DIMM package•PCB Height: 30.48mm (1.20") MaxNOTE: C onsult Factory for availability of:* Lead-Free Products* Vendor source control options * Industrial Temperature option512MB – 64Mx72 DDR SDRAM UNBUFFEREDFEATURESDESCRIPTIONThe W3E G7264S is a 64Mx72 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM components. The module consists of nine 64Mx8 DDR SDRAMs in 66 pin TSOP packages mounted on a 184 pin FR4 substrate.Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges and Burst Lengths allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.* T his product is under development, is not qualifi ed or characterized and is subject to change without notice.OPERATING FREQUENCIESDDR400 @CL=3DDR333 @CL=2.5DDR266 @CL=2DDR266 @CL=2.5DDR200 @CL=2Clock Speed 200MHz 166MHz 133MHz 133MHz 100MHz CL-t RCD -t RP3-3-32.5-3-32-2-22.5-3-32-2-2White Electronic DesignsW3EG7264S-JD3-D3PRELIMINARYPIN SYMBOL PIN SYMBOL PIN SYMBOL PIN SYMBOL 1V REF 47DQS893V SS 139V SS 2DQ048A094DQ4140DQM83V SS 49CB295DQ5141A104DQ150V SS 96V CCQ 142CB65DQS051CB397DQM0143V CCQ 6DQ252BA198DQ6144CB77V CC 53DQ3299DQ7145V SS 8DQ354V CCQ 100V SS 146DQ369NC 55DQ33101NC 147DQ3710NC 56DQS4102NC 148V CC 11V SS 57DQ34103NC 149DQM412DQ858V SS 104V CCQ 150DQ3813DQ959BA0105DQ12151DQ3914DQS160DQ35106DQ13152V SS 15V CCQ 61DQ40107DQM1153DQ4416CK162V CCQ 108V CC 154RAS#17CK1#63WE#109DQ14155DQ4518V SS 64DQ41110DQ15156V CCQ 19DQ1065CAS#111NC 157CS0#20DQ1166V SS 112V CCQ 158NC 21CKE067DQS5113NC 159DQM522V CCQ 68DQ42114DQ20160V SS 23DQ1669DQ43115A12161DQ4624DQ1770V CC 116V SS 162DQ4725DQS271NC 117DQ21163NC 26V SS 72DQ48118A11164V CCQ 27A973DQ49119DQM2165DQ5228DQ1874V SS 120V CC 166DQ5329A775CK2#121DQ22167NC 30V CCQ 76CK2122A8168V CC 31DQ1977V CCQ 123DQ23169DQM632A578DQS6124V SS 170DQ5433DQ2479DQ50125A6171DQ5534V SS 80DQ51126DQ28172V CCQ 35DQ2581V SS 127DQ29173NC 36DQS382V CCID 128V CCQ 174DQ6037A483DQ56129DQM3175DQ6138V CC 84DQ57130A3176V SS 39DQ2685V CC 131DQ30177DQM740DQ2786DQS7132V SS 178DQ6241A287DQ58133DQ31179DQ6342V SS 88DQ59134CB4180V CCQ 43A189V SS 135CB5181SA044CB090NC 136V CCQ 182SA145CB191SDA 137CK0183SA246V CC92SCL138CK0#184V CCSPDPIN CONFIGURATIONA0-A12Address input (Multiplexed)BA0-BA1Bank Select Address DQ0-DQ63Data Input/Output CB0-CB7Check bitsDQS0-DQS8Data Strobe Input/Output CK0, CK1, CK2Clock Input CK0#, CK1#, CK2#Clock InputCKE0Clock Enable input CS0#Chip Select Input RAS#Row Address Strobe CAS#Column Address Strobe WE#Write Enable DQM0-DQM8Data-in-mask V CC Power SupplyV CCQ Power Supply for DQS V SS GroundV REF Power Supply for Reference V CCSPD Serial EEPROM Power Supply SDA Serial data I/O SCL Serial clockSA0-SA2Address in EEPROM V CCID V CC Indentifi cation Flag NCNo ConnectPIN NAMESWhite Electronic Designs W3EG7264S-JD3-D3PRELIMINARY FUNCTIONAL BLOCK DIAGRAMWhite Electronic Designs W3EG7264S-JD3-D3PRELIMINARYABSOLUTE MAXIMUM RATINGSParameter Symbol Value Units Voltage on any pin relative to V SS V IN, V OUT-0.5 to 3.6VVoltage on V CC supply relative to V SS V CC, V CCQ-1.0 to 3.6VStorage Temperature T STG-55 to +150°CPower Dissipation P D9WShort Circuit Current I OS50mANote: Permanent device damage may occur if ‘ABSOLUTE MAXIMUM RATINGS’ are exceeded.Functional operation should be restricted to recommended operating condition.Exposure to higher than recommended voltage for extended periods of time could affect device reliabilityDC CHARACTERISTICS0°C ≤ T A≤ 70°C; DDR333, 266, 200: V CC = V CCQ = +2.5V ± 0.2V; DDR400: V CC = V CCQ = +2.6V ± 0.1VParameter Symbol Min Max Unit Supply Voltage V CC 2.3 2.7VSupply Voltage V CCQ 2.3 2.7V Reference Voltage V REF 1.15 1.35V Termination Voltage V TT 1.15 1.35VInput High Voltage V IH V REF + 0.15V CCQ + 0.3VInput Low Voltage V IL-0.3V REF -0.15VOutput High Voltage V OH V TT + 0.76—VOutput Low Voltage V OL—V TT-0.76VCAPACITANCET A = 25°C. f = 1MHz; DDR333, 266, 200: V CC = V CCQ = +2.5V ± 0.2V; DDR400: V CC = V CCQ = +2.6V ± 0.1VParameter Symbol Max UnitInput Capacitance (A0-A12)C IN132pFInput Capacitance (RAS#,CAS#,WE#)C IN232pFInput Capacitance (CKE0, CKE1)C IN332pFInput Capacitance (CK0#,CK0)C IN432pFInput Capacitance (CS0#, CS1#)C IN532pFInput Capacitance (DQM0-DQM8)C IN68pFInput Capacitance (BA0-BA1)C IN732pFData input/output capacitance (DQ0-DQ63)(DQS)C OUT8pFData input/output capacitance (CB0-CB7)C OUT8pFWhite Electronic Designs W3EG7264S-JD3-D3PRELIMINARYI DD SPECIFICATIONS AND TEST CONDITIONSDDR333, 266, 200: V CC = V CCQ = +2.5V ± 0.2V; DDR400: V CC = V CCQ = +2.6V ± 0.1VIncludes DDR SDRAM component onlyParameter Symbol Conditions DDR400@CL=3MaxDDR333@CL=2.5MaxDDR266@CL=2MaxDDR266@CL=2.5MaxDDR200@CL=2Max UnitsOperating Current I DD0One device bank; Active - Precharge;t RC=t RC (MIN); t CK=t CK (MIN); DQ,DMand DQS inputs changing once perclock cycle; Address and controlinputs changing once every twocycles.13951170117011701170mAOperating Current I DD1One device bank; Active-Read-Precharge Burst = 2; t RC=t RC (MIN);t CK=t CK (MIN); l OUT = 0mA; Addressand control inputs changing once perclock cycle.16651440144014401440mAPrecharge Power-Down Standby Current I DD2P All device banks idle; Power-downmode; t CK=t CK (MIN); CKE=(low)4545454545rnAIdle Standby Current I DD2F CS# = High; All device banks idle;t CK=t CK (MIN); CKE = high; Addressand other control inputs changingonce per clock cycle. V IN = V REF forDQ, DQS and DM.495405405405405mAActive Power-Down Standby Current I DD3P One device bank active; Power-Down mode; t CK (MIN); CKE=(low)405315315315315mAActive Standby Current I DD3N CS# = High; CKE = High; One devicebank; Active-Precharge; t RC=t RAS(MAX); t CK=t CK (MIN); DQ, DM andDQS inputs changing twice per clockcycle; Address and other controlinputs changing once per clock cycle.540450450450450mAOperating Current I DD4R Burst = 2; Reads; Continuous burst;One device bank active; Addressand control inputs changing onceper clock cycle; T CK= T CK (MIN); l OUT= 0mA.17101485148514851485mAOperating Current I DD4W Burst = 2; Writes; Continuous burst;One device bank active; Addressand control inputs changing once perclock cycle; t CK=t CK (MIN); DQ,DMand DQS inputs changing once perclock cycle.17581575157515751575rnAAuto Refresh Current I DD5t RC = t RC (MIN)31052610261026102610mA Self Refresh Current I DD6CKE ≤ 0.2V4545454545mA Operating Current I DD7A Four bank interleaving Reads (BL=4)with auto precharge with t RC=t RC(MIN); t CK=t CK (MIN); Address andcontrol inputs change only duringActive Read or Write commands.40503645364536453645mAWhite Electronic Designs W3EG7264S-JD3-D3PRELIMINARYI DD1 : OPERATING CURRENT : ONE BANK1. Typical Case : DDR333, 266, 200: V CC = V CCQ =+2.5V ± 0.2V; DDR400: V CC = V CCQ = +2.6V ± 0.1V2. Worst Case : V CC=2.7V, T=10°C3. Only one bank is accessed with t RC (min), BurstMode, Address and Control inputs on NOP edgeare changing once per clock cycle. I OUT = 0mA4. Timing Patterns :• DDR200 (100 MHz, CL=2) : t CK=10ns, CL2, BL=4, t RCD=2*t CK, t RAS=5*t CKRead : A0 N R0 N N P0 N A0 N - repeat thesame timing with random address changing;50% of data changing at every burst• DDR266 (133MHz, CL=2.5) : t CK=7.5ns,CL=2.5, BL=4, t RCD=3*t CK, t RC=9*t CK, t RAS=5*t CKRead : A0 N N R0 N P0 N N N A0 N - repeatthe same timing with random addresschanging; 50% of data changing at every burst • DDR266 (133MHz, CL=2) : t CK=7.5ns, CL=2, BL=4, t RCD=3*t CK, t RC=9*t CK, t RAS=5*t CKRead : A0 N N R0 N P0 N N N A0 N - repeatthe same timing with random addresschanging; 50% of data changing at every burst • DDR333 (166MHz, CL=2.5) : t CK=6ns, BL=4, t RCD=10*t CK, t RAS=7*t CKRead : A0 N N R0 N P0 N N N A0 N - repeatthe same timing with random addresschanging; 50% of data changing at every burst • DDR400 (200MHz, CL=3) : t CK=5ns, BL=4, t RCD=15*t CK, t RAS=7*t CKRead : A0 N N R0 N P0 N N N A0 N - repeatthe same timing with random addresschanging; 50% of data changing at every burst I DD7A : OPERATING CURRENT : FOUR BANKS1. Typical Case : DDR333, 266, 200: V CC = V CCQ =+2.5V ± 0.2V; DDR400: V CC = V CCQ = +2.6V ± 0.1V2. Worst Case : V CC=2.7V, T=10°C3. Four banks are being interleaved with t RC (min),Burst Mode, Address and Control inputs on NOPedge are not changing. Iout=0mA4. Timing Patterns :• DDR200 (100 MHz, CL=2) : t CK=10ns, CL2, BL=4, t RRD=2*t CK, t RCD=3*t CK, Read withAutoprechargeRead : A0 N A1 R0 A2 R1 A3 R2 A0 R3 A1 R0repeat the same timing with random addresschanging; 100% of data changing at everyburst• DDR266 (133MHz, CL=2.5) : t CK=7.5ns,CL=2.5, BL=4, t RRD=3*t CK, t RCD=3*t CKRead with AutoprechargeRead : A0 N A1 R0 A2 R1 A3 R2 N R3 A0 NA1 R0 - repeat the same timing with randomaddress changing; 100% of data changing atevery burst• DDR266 (133MHz, CL=2) : t CK=7.5ns, CL2=2, BL=4, t RRD=2*t CK, t RCD=2*t CKRead : A0 N A1 R0 A2 R1 A3 R2 N R3 A0 NA1 R0 - repeat the same timing with randomaddress changing; 100% of data changing atevery burst• DDR333 (166MHz, CL=2.5) : t CK=6ns,BL=4, t RRD=3*t CK, t RCD=3*t CK, Read withAutoprechargeRead : A0 N A1 R0 A2 R1 A3 R2 N R3 A0 NA1 R0 - repeat the same timing with randomaddress changing; 100% of data changing atevery burst• DDR400 (200MHz, CL=3) : t CK=5ns,BL=4, t RRD=10*t CK, t RCD=15*t CK, Read withAutoprechargeRead : A0 N A1 R0 A2 R1 A3 R2 N R3 A0 NA1 R0 - repeat the same timing with randomaddress changing; 100% of data changing atevery burstDETAILED TEST CONDITIONS FOR DDR SDRAM I DD1 & I DD7ALegend:A = Activate, R = Read, W = Write, P = Precharge, N = NOPA (0-3) = Activate Bank 0-3R (0-3) = Read Bank 0-3White Electronic Designs W3EG7264S-JD3-D3PRELIMINARY DDR SDRAM COMPONENT ELECTRICAL CHARACTERISTICS ANDRECOMMENDED AC OPERATING CONDITIONSDDR333, 266, 200: V CC = V CCQ = +2.5V ± 0.2V; DDR400: V CC = V CCQ = +2.6V ± 0.1VWhite Electronic Designs W3EG7264S-JD3-D3PRELIMINARY DDR SDRAM COMPONENT ELECTRICAL CHARACTERISTICS ANDRECOMMENDED AC OPERATING CONDITIONS (continued)DDR333, 266, 200: V CC = V CCQ = +2.5V ± 0.2V; DDR400: V CC = V CCQ = +2.6V ± 0.1VAC Characteristics403335262/265202Parameter Symbol Min Max Min Max Min Max Min Max Units Notes ACTIVE to READ or WRITE delay t RCD15151520ns PRECHARGE command period t RP15151520nsDQS read preamble t RPRE0.9 1.10.9 1.10.9 1.10.9 1.1t CKDQS read postamble t RPST0.40.60.40.60.40.60.40.6t CKACTIVE bank a to ACTIVE bank b command t RRD10121515nsDQS write preamble t WPRE0.250.250.250.25t CKDQS write preamble setup time t WPRES0000ns10,11 DQS write postamble t WPST0.40.60.40.60.40.60.40.6t CK9 Write recovery time t WR15151515nsInternal WRITE to READ command delay t WTR2111t CKData valid output window NA t QH-t DQSQ t QH-t DQSQ t QH-t DQSQ t QH-t DQSQ ns13 REFRESH to REFRESH command interval t REFC70.370.370.370.3μs12 Average periodic refresh interval t REFI7.87.87.87.8μs12 Terminating voltage delay to V CC t VTD0000nsExit SELF REFRESH to non-READ command t XSNR70757575nsExit SELF REFRESH to READ command t XSRD200200200200t CKWhite Electronic DesignsW3EG7264S-JD3-D3PRELIMINARY11. It is recommended that DQS be valid (HIGH or LOW) on or beforethe WRITE command. The case shown (DQS going from High-Z to logic LOW) applies when no WRITEs were previously in progress on the bus. If a previous WRITE was in progress, DQS could be high during this time, depending on t DQSS .12. The refresh period is 64ms. This equates to an average refreshrate of 7.8125µs. However, an AUTO REFRESH command must be asserted at least once every 70.3µs; burst refreshing or posting by the DRAM controller greater than eight refresh cycles is not allowed.13. The valid data window is derived by achieving other specifi cations- t HP (t CK/2), t DQSQ , and t QH (t QH = t HP - t QHS ). The data valid window derates directly proportional with the clock duty cycle and a practical data valid window can be derived. The clock is allowed a maximum duty cycled variation of 45/55. Functionality is uncertain when operating beyond a 45/55 ratio. The data valid window derating curves are provided below for duty cycles ranging between 50/50 and 45/55.14. Referenced to each output group: x8 = DQS with DQ0-DQ7.15. READs and WRITEs with auto precharge are not allowed to beissued until t RAS (MIN) can be satisfi ed prior to the internal precharge command being issued.16. JEDEC specifi es CK and CK# input slew rate must be > 1V/ns(2V/ns differentially).17. DQ and DM input slew rates must not deviate from DQS by morethan 10%. If the DQ/DM/DQS slew rate is less than 0.5V/ns, timing must be derated: 50ps must be added to t DS and t DH for each 100mV/ns reduction in slew rate. If slew rates exceed 4V/ns, functionality is uncertain.18. t HP min is the lesser of t CL min and t CH min actually applied to thedevice CK and CK# inputs, collectively during bank active.19. t HZ (MAX) will prevail over the t DQSCK (MAX) + t RPST (MAX)condition. t LZ (MIN) will prevail over t DQSCK (MIN) + PRE (MAX) condition.20. For slew rates greater than 1V/ns the (LZ) transition will start about310ps earlier.21. CKE must be active (High) during the entire time a refreshcommand is executed. That is, from the time the AUTO REFRESH command is registered, CKE must be active at each rising clock edge, until t RFC has been satisfi ed.22. Whenever the operating frequency is altered, not including jitter, the DLL is required to be reset. This is followed by 200 clock cycles (before READ commands).Notes1.All voltages referenced to V SS2. Tests for AC timing, I DD , and electrical AC and DC characteristicsmay be conducted at normal reference / supply voltage levels, but the related specifi cations and device operations are guaranteed for the full voltage range specifi ed.3.Outputs are measured with equivalent load:Output (V OUT )4.AC timing and I DD tests may use a V IL -to-V IH swing of up to 1.5V in the test environment, but input timing is still referenced to V REF (or to the crossing point for CK/CK#), and parameter specifi cations are guaranteed for the specifi ed AC input levels under normal use conditions. The minimum slew rate for the input signals used to test the device is 1V/ns in the range between V IL (AC) and V IH (AC).5.The AC and DC input level specifi cations are defi ned in the SSTL_2 standard (i.e., the receiver will effectively switch as a result of the signal crossing the AC input level, and will remain in that state as long as the signal does not ring back above [below] the DC input LOW [high] level).6.For slew rates less than 1V/ns and greater than or equal to 0.5V/ns. If the slew rate is less than 0.5V/ns, timing must be derated: t IS has an additional 50ps per each 100mV/ns reduction in slew rate from the 500mV/ns. t IH has 0ps added, that is, it remains constant. If the slew rate exceeds 4.5V/ns, functionality is uncertain. For 403 and 335, slew rates must be greater than or equal to 0.5V/ns.7.Inputs are not recognized as valid until V REF stabilizes. Exception: during the period before V REF stabilizes, CKE ≤ 0.3 x V CCQ is recognized as LOW.8. t HZ and t LZ transitions occur in the same access time windows asvalid data transitions. These parameters are not referenced to a specifi c voltage level, but specify when the device output is no longer driving (HZ) and begins driving (LZ).9.The intent of the “Don’t Care” state after completion of thepostamble is the DQS-driven signal should either be HIGH, LOW, or high-Z, and that any signal transition within the input switching region must follow valid input requirements. That is, if DQS transitions HIGH (above V IHDC (MIN) then it must not transition LOW (below V IHDC ) prior to t DQSH (MIN).10. This is not a device limit. The device will operate with a negativevalue, but system performance could be degraded due to bus turnaround.White Electronic Designs W3EG7264S-JD3-D3PRELIMINARYORDERING INFORMATION FOR JD3Part Number Speed CAS Latency t RCD t RP Height*W3EG7264S403JD3200MHz/400Mb/s33330.48 (1.20")W3EG7264S335JD3166MHz/333Mb/s 2.53330.48 (1.20")W3EG7264S263JD3133MHz/266Mb/s23330.48 (1.20")W3EG7264S265JD3133MHz/266Mb/s 2.53330.48 (1.20")W3EG7264S202JD3100MHz/200Mb/s22230.48 (1.20") NOTES:• Consult Factory for availability of Lead-Free products. (F = Lead-Free, G = RoHS Compliant)• V endor specifi c part numbers are used to provide memory components source control. The place holder for this is shown as lower case “x” in the part numbers above and is to be replaced with the respective vendors code. Consult factory for qualifi ed sourcing options. (M = Micron, S = Samsung & consult factory for others)• Consult factory for availability of industrial temperature (-40°C to 85°C) optionPACKAGE DIMENSIONS FOR JD3* All Dimensions are in millimeters and (inches)White Electronic Designs May 2005Rev. 5W3EG7264S-JD3-D3PRELIMINARYDocument Title512MB – 64Mx72 DDR SDRAM UNBUFFEREDRevision HistoryRev #History Release Date Status Rev 0Created Datasheet3-6-02Advanced Rev 1Corrected Mechanical Drawing1-30-03Advanced Rev 2 2.1 Added document title page2.2 Removed "ED" for Part Marking4-27-04PreliminaryRev 3 3.1 Added 333 and 400 MHz speed3.2 Added lead-free and RoHS notes12-04PreliminaryRev 4 4.1 Updated AC, I DD & CAP specifi cations4.2 Corrected Mo drawing4.3 Added lead-free and RoHS note4.4 Added source control options4.5 Added industrial temperature option2-05PreliminaryRev 5 5.1 Added JEDEC Standard (JD3) Package Option5.2 D3 Not Recommended For New Designs 5-05Preliminary元器件交易网11White Electronic Designs Corporation • (602) 437-1520 • 。

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