GVD1404-001中文资料
台湾明纬开关电源型号(澜孚)LanFu、(明纬)MW、( 衡孚)HF
台湾明纬开关电源单组输出功率：从15W-2KW，型号齐全；低价，高可靠；效率高，工作温度低；尺寸小，重量轻；内置滤波器,低纹波；内附突入电流抑制电路；一年保修；满载烧机测试；库存现货齐全,交货期短..台湾明纬开关电源2组输出功率：从30W-155W，型号齐全；低价，高可靠；效率高，工作温度低；尺寸小，重量轻；内置滤波器,低纹波；内附突入电流抑制电路；一年保修；满载烧机测试；库存现货齐全,交货期短；…台湾明纬开关电源三组输出功率：从30W-155W，型号齐全；低价，高可靠；效率高，工作温度低；尺寸小，重量轻；内置滤波器,低纹波；一年保修；满载烧机测试；库存现货齐全,交货期短；…台湾明纬开关电源四组输出功率：60W、120W、180W；低价，高可靠；效率高，工作温度低；尺寸小，重量轻；内置滤波器,低纹波；内附突入电流抑制电路；满载烧机测试；内置外壳式开关稳压电源高性能G3系列明纬开关电源河南总经销！广州明纬电源深圳明纬电源明纬电源北京代理深圳明纬电源明纬电源网站台湾明纬电源官网 24v明纬电源型号如下：内置外壳型交换式电源供应器－高性能G3系列RS-25 RS-35 RS-50 RS-75 RS-100 RS-150 RD-35 RD-50 RD-65 RD-85 RD-125 RID-50 RID-65 RID-85 RID-125 RT-50 RT-65 RT-85 RT-125 RQ-50 RQ-65 RQ-85 RQ-125内置外壳型交换式电源供应器－泛用型G2系列S-25 S-40 S-60 S-100F S-150 S-240 S-250 S-320 T-40 T-60 T-120 T-115 D -60 D-120 ID-60 Q-60 Q-120 Q-250 IQ-60 IT-60 SE-600内置外壳型交换式电源供应器－经济型G1系列S-15 S-35 S-50 S-100 S-145 S-201 S-350 D-30 D-50 ID-30 ID-50 T-30 T-5 0内置外壳型交换式电源供应器－PFC系列SP-75 SP-100 SP-150 SP-200 SP-300 SP-320 SP-480 SP-500 SP-750 TP-75 TP-100 TP-150 QP-100 QP-150 QP-200 QP-375 USP-225内置外壳型交换式电源供应器－附带UPS功能型AD系列ADS-55 AD-55 ADD-55 ADS-155 AD-155 ADD-155内置外壳型交换式电源供应器－模组化系列MP-450 MP-650 MP-1000 MS-75 MS-150 MS-300 MD-100广州明纬电源深圳明纬电源明纬电源北京代理深圳明纬电源明纬电源网站台湾明纬电源官网 24v明纬电源内置外壳型交换式电源供应器－轨道型系列DR-45 DR-75 DR-120 DRP-240 DRP-480 DRP-480S DRT-240 DRT-480 DRT-960内置外壳型交换式电源供应器－并联系列PSP-300 PSP-500 PSP-600 PSP-1000 PSP-1500 RSP-1500 SCN-600 SCN-800 SCN-1K2 SCN-1K5 SCN-2K0 SCP-600 SCP-800 SCP-1K2 SCP-2K4内置PCB型交换式电源供应器－板上型OFM-5000 OFM-0100 OFM-1500 OFM-0200内置PCB型交换式电源供应器－泛用型PS-25 PS-45 PD-65 PD-45 PD-25 PD-110 PT-45 PT-65 PT-4503 PT-6503 PS-65 PTsb-50 PTsb-75 PQ-100 PPQ-100 PPS-125 PPT-125 LPS-50 LPS-75 LP S-100 LPP-100 LPP-150内置PCB型交换式电源供应器－医疗类MPS-30 MPS-45 MPS-65 MPS-120 MPD-45 MPD-65 MPD-120 MPT-45 MPT-65 MPT-120 MPQ-120外置型交换式电源供应器－充电型PA-120 PB-120 PS-120 ESC-120 ESP-120 ESP-240外置型交换式电源供应器－桌上型GI-12 ES18A ES18B ES18C ES25A ES25B ES25C P25A P25B P30A P30B P40A P4 0B P50A P66A U65S外置型交换式电源供应器－医疗用桌上型MES-30A MES-30B MES-30C外置型交换式电源供应器－插墙型NP-12 ES18U ES18E ES25U ES25EDC/AC直流/交流转换器－修正正弦波150W 300W 600W 1000W 1500W 2500WDC/AC直流/交流转换器－纯正弦波150W 300W 600W 1500W广州明纬电源深圳明纬电源明纬电源北京代理深圳明纬电源明纬电源网站台湾明纬电源官网 24v明纬电源。
海格产品选型手册
海格电气选型手册2010/20112HWH 406P F LSI分断能力:H: 55 KA (框架 I, 630A~1600A)极数：3: 三极 4: 四极额定电流：06: 630 A 08: 800 A 10: 1000 A12: 1250 A 16: 1600 AF: 固定式D: 抽出式P: 中国市场编号保护控制器类型：LS LSILSIGLCD HWH 系列标准配置空气断路器型号含义标准配置的55kA 3极1250A 三段保护的抽出式空气断路器：编号：HWH312PDLSI选型实例:• 断路器本体已包含4NO+4NC 辅助触点；• 标准配置抽出式空气断路器具备以下配置：断路器本体、抽架、安全档板、摇柄、密封门框、失配保护、控制器、合闸继电器、分励继电器、储能电机，端子适配器；• 标准配置固定式空气断路器具备以下配置：断路器本体、支架、密封门框、控制器、合闸继电器、分励继电器、储能电机，密封门框。
* 产品系列范围请查看参数表3 HW N406P F+LSI附件分断能力:N: 65 kA (框架 I, 630A~1600A)80 kA (框架 III, 3200A~4000A)S: 80 kA (框架 II, 2000A~2500A)P: 100 kA (框架 III, 3200A~4000A)极数：3: 三极 4: 四极额定电流：06: 630 A 20: 2000A08: 800 A 25: 2500A10: 1000 A 32: 3200A12: 1250 A 40: 4000A16: 1600 AF: 固定式D: 抽出式P: 中国市场编号保护控制器类型：LSLSLCDLSILSILCDLSIGLSIGLCD可选附件：UVR：欠压继电器CFI：故障指示触点OL：OFF按钮锁附件及其它需求可使用中文标注HWN/S/P系列标准配置空气断路器设计型号含义65kA 3极1250A三段保护带液晶显示屏的抽出式空气断路器 + 欠压继电器：标注：HWN312PDLSILCD + 欠压继电器(或UVR)设计选型实例:•断路器本体已包含4NO+4NC辅助触点；•本设计型号的抽出式空气断路器已具备以下配置：断路器本体、抽架、安全档板、摇柄、密封门框、失配保护、控制器、合闸继电器、分励继电器、储能电机，端子适配器；•本设计型号的固定式空气断路器已具备以下配置：断路器本体、支架、密封门框、控制器、合闸继电器、分励继电器、储能电机，密封门框。
GVF元件代号.
GVF元件代号PC元件代号软件元件代号说明PC元件代号软件元件代号说明X0 PLUSE 旋转编码器脉冲信号(256脉冲/转) X34 XSDS1U 强迫减速一级开关(上方向)X1 X11PL 电梯上方向运行信号(OFF时) X35 XIDP 专用操作开关X2 X12PL 电梯下方向运行信号(OFF时) X36 XATT 司机操作开关X3 XFML 门区信号X37 XATU 司机状态变上方向信号X4 JY1 有速度信号X40 XATD 司机状态变下方向信号X5 JY2 速度一致X41 XPAS 司机状态直驶信号X6 JY3 运行信号X42 X97M 自发电投入信号X7 DUV 不足电压检出(OFF时) X43 X43MM 自发电返回避难层信号X10 X40D 厅门联锁继电器接触信号X44 X43T 自发电继续运行信号X11 X40G 轿门门锁信号X45 X43FI 消防投入消防X12 XOP 开门按钮X46 XCLS 关门极限信号X13 XCL 关门按钮X47 XOLS 开门极限信号X14 XPHSB 光电开关X50 X50BC 50继电器触点输入X15 XDMS37 双触板收起时短接开关X51 X50B 50X继电器触点输入X16 XDSS 安全触板开关X52 X15B 15B接触器触点输入X17 X43GB 43GB继电器触点信号X53 X11T 11继电器触点输入X20 XWD20 20%负载开关X54 X12T 12继电器触点输入X21 XWD80 80%满载开关X55 X10T 10T接触器输入X22 XWD110 110%超载开关X56 XULS 上行极限开关信号X23 XPK 泊梯开关X57 XDLS 下行极限开关信号X24 XRS21 微动平层感应器开关X60 XONC 轿内检修关门信号X25 XRS22 微动平层感应器开关X61 XONU 轿内检修上行信号X26 X43C 轿内检修开关X62 XOND 轿内检修下行信号X27 X43D 轿顶检修开关X63 X511A 1楼内指令信号输入X30 XFMS 层高测定开关X64 X511B 2楼内指令信号输入X31 X100R 层高检测关门信号X65 X511C 3楼内指令信号输入X32 XST 司机状态关门信号X66 X511D 4楼内指令信号输入X33 XSDS1D 强迫减速一级开关(下方向) X67 X511E 5楼内指令信号输入X70 X511F 6楼内指令信号输入X124 X711M 13楼上召唤信号输入X71 X511G 7楼内指令信号输入X125 X711N 14楼上召唤信号输入X72 X511H 8楼内指令信号输入X126 X711O 15楼上召唤信号输入X73 X511I 9楼内指令信号输入X127 X711P 16楼上召唤信号输入X74 X511J 10楼内指令信号输入X130 X711Q 17楼上召唤信号输入X75 X511K 11楼内指令信号输入X131 X711R 18楼上召唤信号输入X76 X511L 12楼内指令信号输入X132 X711S 19楼上召唤信号输入X77 X511M 13楼内指令信号输入X133 X711T 20楼上召唤信号输入X100 X511N 14楼内指令信号输入X134 X811B 2楼下召唤信号输入X101 X511O 15楼内指令信号输入X135 X811C 3楼下召唤信号输入X102 X511P 16楼内指令信号输入X136 X811D 4楼下召唤信号输入X103 X511Q 17楼内指令信号输入X137 X811E 5楼下召唤信号输入X104 X511R 18楼内指令信号输入X140 X811F 6楼下召唤信号输入X105 X511S 19楼内指令信号输入X141 X811G 7楼下召唤信号输入X106 X511T 20楼内指令信号输入X142 X811H 8楼下召唤信号输入X107 X511U 21楼内指令信号输入X143 X811I 9楼下召唤信号输入X110 X711A 1楼上召唤信号输入X144 X811J 10楼下召唤信号输入X111 X711B 2楼上召唤信号输入X145 X811K 11楼下召唤信号输入X112 X711C 3楼上召唤信号输入X146 X811L 12楼下召唤信号输入X113 X711D 4楼上召唤信号输入X147 X811M 13楼下召唤信号输入X114 X711E 5楼上召唤信号输入X150 X811N 14楼下召唤信号输入X115 X711F 6楼上召唤信号输入X151 X811O 15楼下召唤信号输入X116 X711G 7楼上召唤信号输入X152 X811P 16楼下召唤信号输入X117 X711H 8楼上召唤信号输入X153 X811Q 17楼下召唤信号输入X120 X711I 9楼上召唤信号输入X154 X811R 18楼下召唤信号输入X121 X711J 10楼上召唤信号输入X155 X811S 19楼下召唤信号输入X122 X711K 11楼上召唤信号输入X156 X811T 20楼下召唤信号输入X123 X711L 12楼上召唤信号输入X157 X811U 21楼下召唤信号输入Y0 97LF 检修状态下门区信号Y34 Z911C c段数显继电器驱动输出Y1 BZ 蜂鸣器报警信号Y35 Z911D d段数显继电器驱动输出Y2 ZYYDR 语音报站报方向输出Y36 Z911E e段数显继电器驱动输出Y3 ZYYFL 语音报站报层楼输出Y37 Z911F f段数显继电器驱动输出Y4 JX1 变频器速度编码输入X1 Y40 Z911G g段数显继电器驱动输出Y5 JX2 变频器速度编码输入X2 Y41 Z911A1 a1段数显继电器驱动输出Y6 JX3 变频器速度编码输入X3 Y42 Z911B1 b1段数显继电器驱动输出Y7 JX4 变频器速度编码输入X4 Y43 Z911C1 c1段数显继电器驱动输出Y10 Y44 Z911D1 d1段数显继电器驱动输出Y11 ZV50BK 50X继电器驱动输出Y45 Z911E1 e1段数显继电器驱动输出Y12 Z100R 100R继电器驱动输出Y46 Z911F1 f1段数显继电器驱动输出Y13 ZMSP&JX5 29继电器驱动输出（X5）Y47 Z911G1 g1段数显继电器驱动输出Y14 Z43GB 43GB继电器驱动输出Y50 Z511A 1楼内指令灯显示Y15 Z11RY 11继电器驱动输出Y51 Z511B 2楼内指令灯显示Y16 Z12RY 12继电器驱动输出Y52 Z511C 3楼内指令灯显示Y17 V15BRY 15BZ继电器驱动输出Y53 Z511D 4楼内指令灯显示Y20 Z101A 101继电器驱动输出Y54 Z511E 5楼内指令灯显示Y21 Z102A 102继电器驱动输出Y55 Z511F 6楼内指令灯显示Y22 Y56 Z511G 7楼内指令灯显示Y23 Z43LFRY 43LF继电器驱动输出Y57 Z511H 8楼内指令灯显示Y24 ZSIGD ZS1GD继电器驱动输出Y60 Z511I 9楼内指令灯显示Y25 ZSIGU ZS1GU继电器驱动输出Y61 Z511J 10楼内指令灯显示Y26 V10TZ 10TZ继电器驱动输出Y62 Z511K 11楼内指令灯显示Y27 Y63 Z511L 12楼内指令灯显示Y30 ZUPCP 上方向指示Y64 Z511M 13楼内指令灯显示Y31 ZDNCP 下方向指示Y65 Z511N 14楼内指令灯显示Y32 Z911A a段数显继电器驱动输出Y66 Z511O 15楼内指令灯显示Y33 Z911B b段数显继电器驱动输出Y67 Z511P 16楼内指令灯显示Y70 Z511Q 17楼内指令灯显示Y124 Z811E 5楼下召唤灯显示Y71 Z511R 18楼内指令灯显示Y125 Z811F 6楼下召唤灯显示Y72 Z511S 19楼内指令灯显示Y126 Z811G 7楼下召唤灯显示Y73 Z511T 20楼内指令灯显示Y127 Z811H 8楼下召唤灯显示Y74 Z511U 21楼内指令灯显示Y130 Z811I 9楼下召唤灯显示Y75 Z711A 1楼上召唤灯显示Y131 Z811J 10楼下召唤灯显示Y76 Z711B 2楼上召唤灯显示Y132 Z811K 11楼下召唤灯显示Y77 Z711C 3楼上召唤灯显示Y133 Z811L 12楼下召唤灯显示Y100 Z711D 4楼上召唤灯显示Y134 Z811M 13楼下召唤灯显示Y101 Z711E 5楼上召唤灯显示Y135 Z811N 14楼下召唤灯显示Y102 Z711F 6楼上召唤灯显示Y136 Z811O 15楼下召唤灯显示Y103 Z711G 7楼上召唤灯显示Y137 Z811P 16楼下召唤灯显示Y104 Z711H 8楼上召唤灯显示Y140 Z811Q 17楼下召唤灯显示Y105 Z711I 9楼上召唤灯显示Y141 Z811R 18楼下召唤灯显示Y106 Z711J 10楼上召唤灯显示Y142 Z811S 19楼下召唤灯显示Y107 Z711K 11楼上召唤灯显示Y143 Z811T 20楼下召唤灯显示Y110 Z711L 12楼上召唤灯显示Y144 Z811U 21楼下召唤灯显示Y111 Z711M 13楼上召唤灯显示Y145Y112 Z711N 14楼上召唤灯显示Y146Y113 Z711O 15楼上召唤灯显示Y147Y114 Z711P 16楼上召唤灯显示Y150Y115 Z711Q 17楼上召唤灯显示Y151Y116 Z711R 18楼上召唤灯显示Y152Y117 Z711S 19楼上召唤灯显示Y153Y120 Z711T 20楼上召唤灯显示Y154Y121 Z811B 2楼下召唤灯显示Y155Y122 Z811C 3楼下召唤灯显示Y156Y123 Z811D 4楼下召唤灯显示Y157M0 Z40 厅门、轿门锁继电器M28 ZMP 停电自救成立标志M1 ZXOP 门区内开门按钮动作继电器M29 N90P08 速度大于8m/min检出M2 Z102F 门区信号继电器M30 ALPRUN 停电自救运行标志M3 ZOP 开门有效继电器M31 N90P30 速度大于30m/min检出M4 Z30MA 紧急操作完成M32 Z43LA 检修操作M5 ZLSCHG 门极限开关之间状态切换M33 Z49D 低速自返最下层操作M6 Z66 专用操作M34 Z99E 自救检出M7 Z65WA 110%超载检出M35 Z43L 低速运行方式M8 Z65WB 80%满载检出M36 Z43H 高速运行方式M9 Z10D Z10保持继电器M37 Z43HQ 高速禁止M10 ZX43FI 消防开关动作标志M38 Z43GQ 管制方式M11 ZXDSS 门安全触板M39 ZX44F 消防投入有效M12 ZXINU 最高层内指令按钮输入M40 ZXFML 开门区检出M13 ZXIND 最低层内指令按钮输入M41 Z49FM 层高测定运行方式M14 WK1 工作寄存器M42 P49FM 层高测定准备完毕M15 WK2 工作寄存器M43 Z49A 故障或管制自救运行完毕M16 WK3 工作寄存器M44 Z97PKA 泊梯层到达信号M17 Z390 实际层数与超前层数一致M45 Z44FA 消防员专用操作M18 Z92 减速允许信号M46 Z43A 自动运行方式M19 Z91SD 平层前2秒钟检出M47 Z100 开关门继电器M20 Z91B 平层前1秒钟检出M48 Z101 关门继电器M21 TESTSDS 测试SDS开关的动作标志M49 Z102 开门继电器M22 Z91BP Z91B吸合200ms吸合M50 Z65 直驶方式M23 N90P00+0 工作寄存器M51 Z10K A2类故障处理方式M24 N90P00+1 工作寄存器M52 Z50B 安全运行继电器M25 N90P00+2 工作寄存器M53M26 N90P 有速度检出M54 Z59A A1类故障处理方式M27 N90HP 速度大于2m/min检出M55 Z43LQ B1类故障处理方式M56 Z51H 位置出错低速返端站标志M84 Z63B 上、下行继电器M57 SDS92ERR 强迫减速区域速度控制异常标志M85 Z63A 快车上、下行继电器M58 CLEARTCD 清除故障码记录M86 Z11 上行M59 RY1 辅助工作继电器M87 Z12 下行M60 Z44C 轿内指令登记禁止M88 Z41E 上行自救M61 Z44H 轿外指令登记禁止M89 Z42E 下行自救M62 ZX43FNO 消防员操作时停层不开门标志M90 Z61L 上行预选方向M63 Z50CT 安全继电器检查用M91 Z62L 下行预选方向M64 Z50SF 安全继电器检查用M92 Z30F 基站M65 Z50BK 安全继电器输出M93 ZIND 厅外指示有效M66 RY2 工作继电器M94 Z97LF 检修状态门区信号M67 Z41 慢车上方向M95 Z97PK 泊梯完成M68 Z42 慢车下方向M96 Z61LP 厅外上方向指示M69 VT41 位置出错上方向运行M97 Z62LP 厅外下方向指示M70 VT42 位置出错下方向运行M98 Z61LC 轿内上方向指示M71 Z104 本层开门继电器M99 Z62LC 轿内下方向指示M72 MIDP 软件设定专用状态M100 Z63H 厅外召唤应答到达检出M73 MICL 软件专用关门M101 Z30FI 消防到达避难阶标志M74 Z50CTA 安全继电器检查开始M102 Z45CH 轿内有指令信号保持M75 V50CHK 安全继电器检查标志M103 RY3 工作继电器M76 ZATU 司机上行M104 RY4 工作继电器M77 ZATD 司机下行M105 ZMCCH 防恶作剧检出标志M78 Z61 上行信号有M106 OPTSUM SET 规格表和数自动设置M79 Z62 下行信号有M107 Z30UL 电梯到达最高层标志M80 Z61B 上行M108 Z30DL 电梯到达最低层标志M81 Z62B 下行M109M82 M110M83 M111 Z3HUA 上召应答到达检出M112 Z3HDA 下召应答到达检出M140 V11T 上方向运行继电器M113 WK4 工作寄存器M141 V12T 下方向运行继电器M114 WK5 工作寄存器M142 RY6 工作继电器M115 Z100AD 延时关门检出M143 RY7 工作继电器M116 Z16A 微动平层有效标志M144M117 WK6 工作寄存器M145M118 WK7 工作寄存器M146 RY8 工作继电器M119 Z30P 泊梯层检出M147M120 Z100A 自动关门投入M148 Z90A 减速层楼检出M121 ZA2LX 开门故障辅助继电器M149M122 RY5 工作继电器M150M123 ZX44FA 消防专用投入M151 NBCU 轿厢以下层楼无服务层吸合。
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Sprague-Goodman Electronics,Inc. 1700 SHAMES DRIVE, WESTBURY, NY 11590TEL: 516-334-8700 • FAX: 516-334-8771E-MAIL: info@V ARACTOR DIODES SG-950SUPER HYPERABRUPT TUNING VARACTOR DIODES• Low voltage wireless phase locked loop VCOs • Phase shiftersSPECIFICATIONSReverse breakdown voltage at 10 µA DC (at 25°C): 12 V minMaximum reverse leakage current at –10 V (at 25°C): 0.05 µA DCDevice dissipation at 25°C: 250 mW (derated linearly to zero at +125°C)Operating junction temperature: –55°C to +125°C Storage temperature: –55°C to +125°CSOT-23 PACKAGE - Consult factory for additional package configurations.All dimensions are in /mm.Unless otherwise specified, the tolerance on dimensions is ±0.004/0.1.CapacitanceCapacitanceModel NumberTotalRatio Ratio Capacitance C T at –1 V C T at –1 V Q min C T (pF) at –1 V C T at –3 V C T at –6 V at –4 V Common min max min max min max (50 MHz)SingleCathode 3.00 3.60 1.4 1.9 2.6 3.31500 GVD20433-001GVD20433-0045.857.15 1.6 2.0 2.8 3.41200GVD20434-001GVD20434-00410.3512.65 1.6 2.0 2.9 3.41000GVD20435-001GVD20435-00415.5018.50 1.6 2.0 3.0 3.5900GVD20436-001GVD20436-00445.0054.001.62.03.03.5750GVD20437-001---FEATURES• Mesa epitaxial silicon construction • Silicon dioxide passivated• Superior mid range linear characteristics • High tuning ratios • High Q• Available in common cathode Style • Available in chip form (add suffix -000)APPLICATIONS• TCXOs, VCXOs• Low voltage wireless open loop VCOs0.115 ± 0.0052.93 ± 0.130.038 ± 0.0030.96 ± 0.0650.051 ± 0.0041.3 ± 0.10.075 ± 0.0051.91 ± 0.130.091 ± 0.0082.3 ± 0.20.021 ± 0.0030.53 ± 0.080.040 ± 0.0071.03 ± 0.180.007 ± 0.0030.18 ± 0.080.0047 ± 0.00130.12 ± 0.033TOP VIEW(SINGLE)(COMMON CATHODE)0.0350.900.0310.800.0792.00.0370.950.0370.950.016 ± 0.0020.41 ± 0.04TYPTYP1PAD LAYOUT23123TYP TYP 100.010.05.01.00.50.312345610203050REVERSE VOLTAGE(VOLTS)2.03.00.5GVD20436-001GVD20435-001GVD20434-001C T (pF)50.0V ARACTOR DIODES SG-950SUPER HYPERABRUPT TUNING VARACTOR DIODES• Low voltage wireless phase locked loop VCOs • Phase shiftersSPECIFICATIONSReverse breakdown voltage at 10 µA DC (at 25°C): 12 V minMaximum reverse leakage current at –10 V (at 25°C): 0.05 µA DCDevice dissipation at 25°C: 250 mW (derated linearly to zero at +125°C)Operating junction temperature: –55°C to +125°C Storage temperature: –55°C to +125°CSOT-23 PACKAGE - Consult factory for additional package configurations.All dimensions are in /mm.Unless otherwise specified, the tolerance on dimensions is ±0.004/0.1.TotalTotalTotalModel NumberCapacitance Capacitance Capacitance Q min C T (pF) at –1 VC T (pF) at –2.5 V C T (pF) at –8 Vat –4 V Common minmin max max(50 MHz)Single Cathode 13.0 6.510.0 2.7750GVD20442-001GVD20442-00413.0 6.510.0 2.7350GVD20443-001GVD20443-00417.08.513.0 3.2600GVD20444-001GVD20444-00417.08.513.0 3.2300GVD20445-001GVD20445-00426.013.020.0 4.7500GVD20446-001---26.013.020.0 4.7225GVD20447-001---36.018.027.0 6.2400GVD20448-001---36.018.027.06.2150GVD20449-001---FEATURES• Mesa epitaxial silicon construction • Silicon dioxide passivated• Superior mid range linear characteristics • High tuning ratios • High Q• Available in common cathode style • Available in chip form (add suffix -000)APPLICATIONS• TCXOs, VCXOs• Low voltage wireless open loop VCOsTotalTotalTotalModel NumberCapacitance Capacitance Capacitance Q min C T (pF) at –1 VC T (pF) at –2.5 V C T (pF) at –4 Vat –4 V Common minmin max max(50 MHz)Single Cathode 9.04.56.53.0400GVD20450-001GVD20450-0040.115 ± 0.0052.93 ± 0.130.038 ± 0.0030.96 ± 0.0650.051 ± 0.0041.3 ± 0.10.075 ± 0.0051.91 ± 0.130.091 ± 0.0082.3 ± 0.20.021 ± 0.0030.53 ± 0.080.040 ± 0.0071.03 ± 0.180.007 ± 0.0030.18 ± 0.080.0047 ± 0.00130.12 ± 0.033TOP VIEW(SINGLE)(COMMON CATHODE)0.0350.900.0310.800.0792.00.0370.950.0370.950.016 ± 0.0020.41 ± 0.04TYPTYP1PAD LAYOUT23123TYP TYP 50.010.05.01.00.50.3123456102030REVERSE VOLTAGE(VOLTS)2.03.00.5C T (pF)50GVD20448-001GVD20446-001GVD20444-001GVD20450-001TotalTotalTotalTotalCapacitance Capacitance Capacitance Capacitance Q min C T (pF) at –1 VC T (pF) at –2.5 V C T (pF) at –4 VC T (pF) at –8 Vat –4 V Model min min max max max (50 MHz)Number*36.018.027.012.0 6.2400GVD90001 –___26.013.020.09.0 4.7500GVD90002 –___17.08.513.0 6.0 3.2600GVD90003 –___13.0 6.510.0 4.5 2.7750GVD90004 –___9.0 4.5 6.5 3.0 1.7900GVD90005 –___4.0 2.0 3.0 1.5 1.01200GVD90006 –___1.8 1.1 1.50.80.551400GVD90007 –___1.20.8 1.10.60.451600GVD90008 –___0.60.50.80.40.351800GVD90009 –___SUPER HYPERABRUPT TUNING VARACTOR DIODESSurface Mount Low Parasitic Package (SMLP)APPLICATIONS• PCS • WANS • DECT • GSM • TAGS• AMPS• CellularSPECIFICATIONSReverse breakdown voltage at 10 µA DC (at 25°C): 12 V minMaximum reverse leakage current at –10 V (at 25°C): 0.05 µA DCDevice dissipation at 25°C: 250 mW (derated linearly to zero at +125°C)Operating junction temperature: –65°C to +125°CStorage temperature: –65°C to +125°CAll dimensions are in /mm.Unless otherwise specified, the tolerance on dimensions is ±0.003/0.08.Note: An SMLP package with three terminations sized to fit the pad layout for an SOT-23 package is also available. Thispackage can be used for multiple diode designs (such as common cathode or common anode). Contact factory for the three-terminal SMLP outline drawing, and for further information on the multiple diode configurations.FEATURES• Mesa epitaxial silicon construction • Silicon dioxide passivated• Fits footprint for SOD-323, SOD-123 and smaller • High frequency (VHF to 8 GHz)• Available on carrier and reel• Available in chip form (add suffix -000)• Two package styles including lower cost, flat top version• Alternate notched termination version available,contact factory for outline drawingV ARACTOR DIODES SG-950*For complete model number, select “Dash No.” from chart below.V ARACTOR DIODES SG-950WIDEBAND HYPERABRUPT TUNING VARACTOR DIODESMicrowave Hyperabrupt Series• High linearity VCOs • Phase shiftersSPECIFICATIONSReverse breakdown voltage at 10 µA DC (at 25°C): 20 V minMaximum reverse leakage current at –20 V (at 25°C): 0.05 µA DCDevice dissipation at 25°C: 250 mW (derated linearly to zero at +125°C)Operating junction temperature: –55°C to +125°C Storage temperature: –55°C to +125°CSOT-23 PACKAGE - Consult factory for additional package configurations.All dimensions are in /mm.Unless otherwise specified, the tolerance on dimensions is ±0.004/0.1.TotalTotalTotalModel Number Capacitance Capacitance Capacitance Q min C T (pF) at –0 VC T (pF) at –4 V C T (pF) at –20 V at –4 V Common minmin max min max (50 MHz)Single Cathode 2.7 1.25 1.750.430.571000GVD30422-001GVD30422-0044.2 1.70 2.500.520.72850GVD30432-001GVD30432-0046.3 2.20 3.800.680.96700GVD30442-001GVD30442-00411.9 3.70 5.500.94 1.30600GVD30452-001GVD30452-00426.09.0011.001.902.50400GVD30462-001GVD30462-004FEATURES• Mesa epitaxial silicon construction • Silicon dioxide passivated• Superior wide range linear characteristics • High tuning ratios • High Q• Available in common cathode style • Available in chip form (add suffix -000)APPLICATIONS• Low phase noise VCOs • Phase locked loop VCOsWIDEBAND HYPERABRUPT TUNING VARACTOR DIODESVHF/UHF Hyperabrupt Series• High linearity VCOs • Phase shiftersSPECIFICATIONSReverse breakdown voltage at 10 µA DC (at 25°C): 25 V minMaximum reverse leakage current at –20 V (at 25°C): 0.05 µA DCDevice dissipation at 25°C: 250 mW (derated linearly to zero at +125°C)Operating junction temperature: –55°C to +125°C Storage temperature: –55°C to +125°CSOT-23 PACKAGE - Consult factory for additional package configurations.All dimensions are in /mm.Unless otherwise specified, the tolerance on dimensions is ±0.004/0.1.TotalTotalModel NumberCapacitance Capacitance Q min C T (pF) at –3 V C T (pF) at –25 V at –4 V Common min max min max(50 MHz)SingleCathode9.5 14.5 1.8 2.8 200 GVD30501-001 —9.5 14.5 1.8 2.8 750 GVD30502-001 —26.0 32.0 4.3 6.0 200 GVD30503-001 —26.0 32.0 4.3 6.0 500 GVD30504-001 —FEATURES• Mesa epitaxial silicon construction • Silicon dioxide passivated• Superior wide range linear characteristics • High tuning ratios • High Q• Available in common cathode style • Available in chip form (add suffix -000)APPLICATIONS• Low phase noise VCOs • Phase locked loop VCOsV ARACTOR DIODES SG-950WIDEBAND HYPERABRUPT TUNING VARACTOR DIODESVHF/UHF Hyperabrupt Series• High linearity VCOs • Phase shiftersSPECIFICATIONSReverse breakdown voltage at 10 µA DC (at 25°C): 22 V minMaximum reverse leakage current at –20 V (at 25°C): 0.05 µA DCDevice dissipation at 25°C: 250 mW (derated linearly to zero at +125°C)Operating junction temperature: –55°C to +125°C Storage temperature: –55°C to +125°CSOT-23 PACKAGE - Consult factory for additional package configurations.All dimensions are in /mm.Unless otherwise specified, the tolerance on dimensions is ±0.004/0.1.TotalTotalTotalModel NumberCapacitanceCapacitance Capacitance Q min C T (pF) at –4 V C T (pF) at –8 V C T (pF) at –20 V at –4 V Common min max min max min max(50 MHz)SingleCathode18.0 22.0 7.5 10.5 2.7 3.5 160 GVD30601- 001 —45.0 55.0 18.0 25.0 6.6 9.0 125 GVD30602-001 —100.0120.039.055.014.019.080GVD30603-001—FEATURES• Mesa epitaxial silicon construction • Silicon dioxide passivated• Superior wide range linear characteristics • High tuning ratios • High Q• Available in common cathode style • Available in chip form (add suffix -000)APPLICATIONS• Low phase noise VCOs • Phase locked loop VCOsV ARACTOR DIODES SG-9501112© 2000 SPRAGUE-GOODMAN ELECTRONICS, INC., ALL RIGHTS RESERVED.PRINTED IN THE U.S.A.50104。