KST93MTF;中文规格书,Datasheet资料

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KD43G7-40NM-B2 国显4.3寸TFT datasheet

深圳国显科技有限公司Shenzhen K&D Technology Co.,LtdSPECIFICATIONFORLCD MODULECustomer :Product Model: KD43G7-40NM-B2Designed byChecked byApproved by※The specification of “TBD” should refer to the measured value of sample . If there is difference between the design specification and measured value, we naturally shall negotiate and agree to Sample code:Re gi st er edRevision HistoryVersion Contents Date NoteA Original 2009.7.19deretsigeRnUContentsNo. ItemPage 1. Numbering System 4/26 2 Scope5/26 3 Normative Reference 5/26 4 Definitions5/26 5 Technology Specifications 7/26 6 Circuit block diagram11/267 Initial code 15/26 8 Write/ReadSPI Timing16/26 9 Reliability Test Condition and Methods17/26 10 Inspection standard18/26 11 Handling Precautions 24/26 12 Precaution for use25/26 13 Dimensional Outline26/26Un Re gi st er ed1 Numbering System—(1) (2) (3) (4) (5) (6) (7) （8）2 ScopeThis specification applies to the TFT LCD module which is designed and manufactured by LCM Factory of Shenzhen K&D Technology Co.,Ltd.It is capable of using 262k colors mode 24bit parallel bi-directional interface.3 Normative ReferenceGB/T4619-1996 《 Liquid Crystal Display Test Method 》GB/T2424 《Basic environmental Testing Procedures for Electric and Electronic Products.》GB/T2423 《Basic Testing Procedures for Electric and Electronic Products 》 IEC61747-1 《SIXTH PARTGB2828`2829-87《National Standard of PRC 》4 Definitions4.1 Definitions of VopThe definitions of threshold voltage Vth1, Vth2 the following typical waveforms are applied on liquid crystal by the method of equalized voltage for each duty and bias.【 selected waveform 】【 non-selected waveform 】① Vth1: The voltage which the brightness of segment indicates 50% of saturated value on the conditions of selected waveform (f f =80Hz, Φ=10°θ=270°at 25℃)② Vth2: The voltage which the brightness of segment indicates 50% of saturated value on the conditions of non-selected waveform (f f =80Hz, Φ=10°θ=270°at 25℃)③ Vop: (Vth1(50%)+Vth2(50%))/2 (f f =80Hz, Φ=10°θ=270°at 25℃)4.2 Definition of Response Time Tr, TdTr: The time required which the brightness of segment①becomes 10% from 100% when waveform is switched to selected one from non-selected one. (f f =80Hz, Φ=10°θ=270°at 25)℃ Un Re gi st er edTd: The time required which the brightness of segment②becomes 90% from 10% when waveform is switched to selected one from selected one. (f f =80Hz, Φ=10°θ=270°at 25)℃4.3 Definition of Contrast Ratio CrCr=A/B① A: Segments brightness in case of non-selected waveform ② B: Segments brightness in case of selected waveform4.4 Definition of Angle and Viewing RangeAngular Graph: Constrast RatioSuch as:Viewing Angle Range:80(Cr>2) Horizontal 70(Cr>2) VerticalUn Re gi st5 Technology Specifications5.1 FeatureThis single-display module is suitable for use in Multidedia Player products. The LCD adopts one backlight with High brightness 10-lamps white LED.1) Construction: 4.3〞 а-Si color TFT-LCD ,White LED backlight. 2) LCD:2.1 Amorphous-TFT 4.3-inch display, transmissive, normally white type. 2.2 480(RGB)×272 dots Matrix. 2.3 Narrow-contact ledge technique. 2.4 LCD Driver IC: HX8257A-01× 1. 3) Low cross talk by frame rate modulation. 4) 262K Color ,24bit RGB interface.5) Video signal interface: Parallel RGB .5.2 Mechanical SpecificationsItem SpecificationsUnitDimensional outline 105.6(W) ×67.3(H)×2.85 (T)mm TP outlinemm TP(V.A) mm TP(A.A) mm Active area 95.04(W) ×53.86 (H) mm Pixel size 198(W) ×198(H) um Resolution480(RGB) × 272pixel5.3 Absolute Max. RatingSymbolValue ItemMin typMax Unit Remarkpower supplyVCC 1.8 3.0 3.6 V Input high voltage V IH 0.8VCC - VCC V Input low voltage V IL 0 - 0.2VCC V Operating temperature T OPR -20 +70 ℃ Storage temperature T STG -30 +80 ℃ Clock frequency F CLK-915MHzNote1Note: For parallel RGB interface, maximum clock frequency is 15MHz, For serial RGB interface, maximum clock frequency is 33MHz,Un Re gi s t er edderetsigenU5.5 Optical specificationsderetsigeRnU5.6 LED back light specification (10 White Chips)Item Symbol Condition Min TypMax Unit Forward Voltage Vf lf=40mA 15 16 17 V Uniformity (with L/G)ΔB p lf=40mA 80 - - % Luminance for LCD L V If=40mA 5200 - - cd/m 2LED CIRCUIT5.7 Interface Pin ConnectionsPIN NO.SymbolDescription1 LED-K LED backlight(Cathode)2 LED-A LED backlight(anode)3 GND Ground4 VCC Power supply (Digital +3.0V)5-12 R0-R7 Red Data13-20 G0-G7 Green Data 21-28 B0-B7 Blue Data29 GND Ground30 CLKClock signal 31 DISPDisplay on/off32 HSYNC Horizontal sync input in RGB mode (short toGND if not used) 33 VSYNC Vertical sync input in RGB mode (short toGND if not used)34 DEN Data Enable35 NC NC 36 GND Ground 37 NC NC 38 NC NC 39 NC NC 40NCNCUn Re gi st er ed6 Signal timing diagram and Circuit block diagram 6.1 Circuit block diagramTP CircuitHX8257A-01n Re gi st er ed6.2 Signal Timing Diagram 6.2.1 Power ON Sequence6.2.2 Power OFF SequenceUn Re gi st er ed6.2.3 Timing Diagram of interface SignalderetsigeRnU6.2.4 Input setup Timing requirementderetsigeRnU7 Initial codederetsigeRnU8 Write/ReadSPI TimingderetsigeRnU9 Reliability Test Conditions And MethodsNOItem ConditionMethod1 High / Low Temperature Storage80℃/-30℃ 120hrsCheck and record every 48Hrs2High / Low Temperature Life 70℃/-20℃ 120hrs (operatingmode) Check and record every 48Hrs3HighTemperature 、 High Humidity Operating60℃,90% RH, 96HrsCheck and record every 48hrs4 Thermal Shock-30℃(30Min ) 25℃(5Min)80℃(30Min)(conversion time, : 5 sec ) 20cyclesEach 10 cycles end ,check 5 Vibration10Hz~55Hz~10Hz Amplitude: 1.5mm2hrs for each direction(X,Y ,Z) Each direction end,Check the Appearance andElectrical Characteristics6 Static ElectricityGap mood: ±1KV~±8KV (10 times air discharge with positive/negative voltagevoltage gap : 1kv) Touch mood: ±1KV~±4KVEach discharge end, Check the Electrical Characteristics7 Curve60 Thousand times, 40times/min150°( according to die if exist) Check and recordevery2~4 thousand times8 SlumpFree faller movement for each side 、cording 、angle (75cm High 、6 sides 、2 angle 、2cording)EndUn Re gi st er ed10 Inspection standardxRxIntensity Of AdhesionIf lower than specification, rejectGold Fold TwistRejectSiliconAccording to outline, no gold outside, seal can not be higher than LCD07IC/FPC BondingFPC Gold SeverRejectLack of Component 、Polarity Inverse If exist, rejectLeak Solder 、 Virtual Solder If exist, rejectShort Circuit In Solder PointIf exist, rejectTin BallIf exist, rejectTin Acumination If visual, rejectHeight Solder PointIf higher 0.5mm than component. reject08 SMT Height of componentEither side higher 0.5mm thancomponent, rejectUn R e gi st e r e dr e11 Handling Precautions11.1 Mounting methodThe LCD panel of Daxian LCD module consists of two thin glass plates with polarizes which easily be damaged. And since the module in so constructed as to be fixed by utilizing fitting holes in the printed circuit board.Extreme care should be needed when handling the LCD modules.11.2 Caution of LCD handling and cleaning When cleaning the display surface, Use soft cloth with solvent [recommended below] and wipe lightly l Isopropyl alcohol l Ethyl alcoholDo not wipe the display surface with dry or hard materials that will damage the polarizer surface.Do not use the following solvent: l Water l AromaticsDo not wipe ITO pad area with the dry or hard materials that will damage the ITO patternsDo not use the following solvent on the pad or prevent it from being contaminated:l Soldering fluxl Chlorine (Cl) , Salfur (S)If goods were sent without being sili8con coated on the pad, ITO patterns could be damaged due to the corrosion as time goes on.If ITO corrosion happen by miss-handling or using some materials such as Chlorine (CI), Salfur (S) from customer, Responsibility is on customer.11.3 Caution against static chargeThe LCD module use C-MOS LSI drivers, so we recommended that you:Connect any unused input terminal to Vdd or Vss, do not input any signals before power is turned on, and ground your body, work/assembly areas, assembly equipment to protect against static electricity.11.4 packingl Module employ LCD elements and must be treated as such. l Avoid intense shock and falls from a height.l To prevent modules from degradation, do not operate or store them exposeddirect to sunshine or high temperature/humidity11.5 Caution for operationl It is an indispensable condition to drive LCD’s within the specified voltage limitsince the higher voltage then the limit cause the shorter LCD life.l An electrochemical reaction due to direct current causes LCD’s undesirabledeterioration, so that the use of direct current drive should be avoided.l Response time will be extremely delayed at lower temperature then theoperating temperature range and on the other hand at higher temperature LCD’s how dark color in them. However those phenomena do not mean Un Re gi st er edoperation temperature.l If the display area is pushed hard during operation, some font will beabnormally displayed but it resumes normal condition after turning off once. l A slight dew depositing on terminals is a cause for electro-chemical reactionresulting in terminal open circuit.Usage under the maximum operating temperature, 50%Rh or less is required.11.6 storageIn the case of storing for a long period of time for instance, for years for the purpose or replacement use, the following ways are recommended.l Storage in a polyethylene bag with the opening sealed so as not to enter fresh air outside in it . And with no desiccant.l Placing in a dark place where neither exposure to direct sunlight nor light’s keeping the storage temperature range.l Storing with no touch on polarizer surface by the anything else.[It is recommended to store them as they have been contained in the inner container at the time of delivery from us11.7 Safetyl It is recommendable to crash damaged or unnecessary LCD’s into pieces and wash off liquid crystal by either of solvents such as acetone and ethanol, which should be burned up later.l When any liquid leaked out of a damaged glass cell comes in contact with your hands, please wash it off well with soap and water12 Precaution for use12.1A limit sample should be provided by the both parties on an occasion when theboth parties agreed its necessity. Judgment by a limit sample shall take effect after the limit sample has been established and confirmed by the both parties.12.2On the following occasions, the handing of problem should be decided through discussion and agreement between responsible of the both parties. l When a question is arisen in this specificationl When a new problem is arisen which is not specified in this specificationsl When an inspection specifications change or operating condition change in customer is reported to Daxian , and some problem is arisen in this specification due to the changel When a new problem is arisen at the customer’s operating set for sample evaluation in the customer site.Un Re gi st er ed13 Dimensional Outline。

士徒特型号PG01_2 电路保护屏熔片，6.3x32mm，400-500VAC，400VDC，1-3

1Cartridge Fuse, 6.3x32 mm, 400-500 VAC, 400 VDC, 1-32 A, High Breaking Capacity up to 3500 ASee below:Approvals and Compliances UL 248-14 · 400 - 500 VAC · Time-Lag TDescription- 6.3 x 32 mm fuses for primary protection - 16 rated currents from 0.5 A to 32 A - 400 VDC pending for 5, 6.3, 8 AUnique Selling Proposition- High rated voltages up to 500 VAC / 400 VDC - High breaking capacity up to 3500 A- Suitable for pulse-shaped continuous currents- Useable for commercial cooking appliances according UL 197Applications- 3-phase applications - DC applications - Photovoltaic- Frequency converter - Power electronics- Commercial cooking appliancesReferences Packaging DetailsPigtail Type SHT 6.3x32 PigtailWeblinkspdf data sheet , html data sheet , General Product Information , Packaging details , Distributor-Stock-Check , Detailed request for product , MicrositeApplication Note Primary Protection in Equipment with further information on increased Pulse Strength and their test conditions according to inter-national standards see Impulse Withstand VoltageT echnical DataRated Voltage 400 - 500 VAC, 63 - 400 VDC Rated current 0.5 - 32 ABreaking Capacity 3500 A - 20 kA Characteristic Time-Lag TMountingFuseholder / Clip Admissible Ambient Air Temp.-40 °C to 85 °CClimatic Category 40/085/21 acc. to IEC 60068-1Material: Tube CeramicMaterial: Endcaps Nickel-Plated Copper Alloy Material: Axial Leads Tin-Plated Copper Unit Weight2.84 gStorage Conditions 0 °C to 60 °C, max. 70% r.h.Product Marking, Type, Rated current, Rated Voltage, Characteristic, Breaking capacity, Ap-provalsApprovals and CompliancesDetailed information on product approvals, code requirements, usage instructions and detailed test conditions can be looked up in Details about ApprovalsSCHURTER products are designed for use in industrial environments. They have approvals from independent testing bodies according to national and international standards. Products with specific characteristics and requirements such as required in the automotive sector according to IATF 16949, medical technology according to ISO 13485 or in the aerospace industry can be offered exclusively with customer-specific, individual agree-ments by SCHURTER.ApprovalsThe approval mark is used by the testing authorities to certify compliance with the safety requirements placed on electronic products. Approval Reference T ype: SHT 6.3x32Approval LogoCertificates Certification Body DescriptionUL ApprovalsULUL File Number: E41599Product standardsProduct standards that are referencedOrganization Design Standard DescriptionDesigned according to UL 248-14Low voltage fuses - Part 14: Additional fusesDesigned according to CSA22.2 No. 248.14Low-Voltage Fuses - Part 14: Supplemental Fuses Application standardsApplication standards where the product can be usedOrganization Design StandardDescriptionDesigned for applications acc.IEC/UL 60950IEC 60950-1 includes the basic requirements for the safety of informationtechnology equipment.CompliancesThe product complies with following Guide LinesIdentification Details Initiator DescriptionCE declaration of conformity SCHURTER AG The CE marking declares that the product complies with the applicablerequirements laid down in the harmonisation of Community legislation onits affixing in accordance with EU Regulation 765/2008.RoHS SCHURTER AG EU Directive RoHS 2011/65/EUChina RoHS SCHURTER AG The law SJ / T 11363-2006 (China RoHS) has been in force since 1 March2007. It is similar to the EU directive RoHS.REACH SCHURTER AG On 1 June 2007, Regulation (EC) No 1907/2006 on the Registration,Evaluation, Authorization and Restriction of Chemicals 1 (abbreviated as"REACH") entered into force.Dimension [mm] 6.3 mm23Time-Current-CurvesT i m e i n S e c o n d sMultiple of Rated Current InAll VariantsPackaging Unit xxxx.xxxx Small Box Pack (10 pcs.)xxxx.xxxx.G Bulk (1000 pcs.)The specifications, descriptions and illustrations indicated in this document are based on current information. All content is subject to modifications and amendments. Information furnished is believed 0 5 . 0 2 . 2 0 1 94。

MBRS140T3G;中文规格书,Datasheet资料

(Note: Microdot may be in either location)
Lead and Mounting Surface Temperature for Soldering Purposes:
ORDERING INFORMATION
Device MBRS140T3G SBRS8140T3G Package SMB (Pb−Free) SMB (Pb−Free) Shipping† 2,500 / Tape & Reel 2,500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
DC
3 10
0
1
2
3
4
5
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Power Dissipation

3
/
MBRS140T3G, SBRS8140T3G
PACKAGE DIMENSIONS
Figure 3. Typical Capacitance
I F(AV) , AVERAGE FORWARD CURRENT (AMPS)
10 9 8 7 6 5 4 3 2 1 0 30 40 50 60 70 80 90 100 TC, CASE TEMPERATURE (C) 110 120 130

MJF44H11G;MJF45H11G;MJF44H11;MJF45H11;中文规格书,Datasheet资料

20 30 50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 2. Maximum Rated Forward Bias Safe Operating Area
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
−
−
500
−
−
500
−
−
140
−
−
100
−
Unit Vdc mA mA Vdc Vdc
−
pF MHz
ns ns ns
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0 0.7 D = 0.5 0.5
0.3 0.2
0.2
0.1 0.1
0.07
0.05
0.05 0.02
MJF44H11 MJF45H11
Symbol VCEO(sus)
ICES IEBO VCE(sat) VBE(sat) hFE

VISHAY BFP93A BFP93AW Data Sheet

BFP93A / BFP93AWDocument Number 85020Vishay SemiconductorsSilicon NPN Planar RF TransistorFeatures•High power gain •Low noise figure•High transition frequencyApplicationsRF amplifier up to GHz range.Mechanical DataTyp: BFP93ACase: SOT-143 Plastic case Weight: approx. 8.0 mg Marking: FE Pinning:1 = Collector,2 = Emitter3 = Base,4 = Emitter Typ: BFP93AWCase: SOT-343 Plastic case Weight: approx. 6.0 mg Marking: WFE Pinning:1 = Collector,2 = Emitter,3 = Base,4 = EmitterAbsolute Maximum RatingsT amb = 25°C, unless otherwise specifiedMaximum Thermal Resistance1) on glass fibre printed board (25 x 20 x 1.5) mm 3 plated with 35 µm CuParameterTest conditionSymbol Value Unit Collector-base voltage V CBO 20V Collector-emitter voltage V CEO 12V Emitter-base voltage V EBO 2V Collector current I C 50mA Total power dissipation T amb ≤ 60°CP tot 200mW Junction temperature T j 150°C Storage temperature rangeT stg-65 to +150°CParameterTest condition Symbol Value Unit Junction ambient1)R thJA450K/W Document Number 85020BFP93A / BFP93AWVishay Semiconductors Electrical DC CharacteristicsT amb = 25°C, unless otherwise specifiedElectrical AC CharacteristicsT amb = 25°C, unless otherwise specifiedParameterTest conditionSymbol MinT yp.Max Unit Collector-emitter cut-off current V CE = 20 V , V BE = 0I CES 100µA Collector-base cut-off current V CB = 15 V , I E = 0I CBO 100nA Emitter-base cut-off current V EB = 2 V , I C = 0I EBO 10µA Collector-emitter breakdown voltageI C = 1 mA, I B = 0V (BR)CEO 12V Collector-emitter saturation voltageI C = 50 mA, I B = 5 mAV CEsat 0.10.4VDC forward current transfer ratio V CE = 5 V , I C = 30 mAh FE4090150ParameterTest conditionSymbol MinT yp.MaxUnit Transition frequency V CE = 5 V , I C = 30 mA, f = 500 MHzf T 6GHz Collector-base capacitance V CB = 10 V , f = 1 MHz C cb 0.45pF Collector-emitter capacitance V CE = 10 V , f = 1 MHz C ce 0.2pF Emitter-base capacitance V EB = 0.5 V , f = 1 MHz C eb 1.25pF Noise figureV CE = 8 V , Z S = 50 Ω, f = 800 MHz, I C = 5 mA F 1.6dB V CE = 8 V , Z S = 50 Ω, f = 800 MHz, I C = 25 mAF 2.1dB Power gainV CE = 8 V , Z S = 50 Ω, Z L = Z Lopt , I C = 25 mA, f = 800 MHz G pe 17dB V CE = 8 V , Z S = 50 Ω, Z L = Z Lopt , I C = 25 mA, f = 2 GHzG pe 10dB Linear output voltage - two tone intermodulation test V CE = 8 V , I C = 25 mA, d IM = 60 dB, f 1 = 806 MHz,f 2 = 810 MHz, Z S = Z L = 50 ΩV 1 = V 2260mVThird order intercept pointV CE = 8 V , I C = 25 mA, f = 800 MHzIP 331dBmBFP93A / BFP93AWDocument Number 85020Vishay SemiconductorsCommon Emitter S-ParametersZ 0 = 50 Ω, T amb = 25°C, unless otherwise specified V CE /VI C /mAf/MHzS11S21S12S22LIN MAGANG LIN MAGANG LIN MAGANG LIN MAGANG deg deg deg deg 3101000.642-64.022.49143.10.02661.30.797-31.53000.566-130.112.29109.60.04543.50.433-52.75000.555-156.28.0095.50.05342.70.293-54.68000.560-176.6 5.2582.40.06645.50.221-52.710000.567173.8 4.3075.80.07546.60.204-52.612000.580166.3 3.6469.30.08547.00.192-54.215000.601156.6 2.9760.20.09946.60.181-60.018000.620148.0 2.5252.10.11245.60.171-68.020000.642143.3 2.3046.60.12244.60.170-74.422000.662137.5 2.1341.50.13243.50.169-79.825000.691130.2 1.9033.40.14337.90.168-92.428000.715123.1 1.7025.90.15237.70.176-104.230000.733119.4 1.5921.60.16036.40.180-112.73301000.486-114.234.23127.80.01756.00.600-48.73000.552-162.214.5699.70.02955.00.248-67.85000.563-177.29.1089.10.04059.70.149-66.78000.572169.7 5.8478.50.05862.00.105-59.310000.578162.6 4.7572.60.07161.40.098-57.012000.590157.0 4.0167.00.08460.00.093-58.515000.609149.7 3.2558.40.10157.50.090-67.518000.631142.5 2.7651.00.11754.40.086-80.220000.649138.7 2.5045.90.12952.10.089-90.022000.673133.3 2.3141.00.14050.00.091-97.425000.698126.9 2.0633.30.15143.70.099-116.428000.718120.6 1.8426.50.16242.20.112-129.830000.736116.6 1.7221.90.16940.30.124-138.55101000.658-59.422.80144.70.02462.30.816-28.23000.557-125.312.81111.00.04244.40.468-46.65000.538-152.88.4296.60.05043.30.331-46.88000.543-174.4 5.5183.30.06245.80.263-44.010000.546175.6 4.5076.60.07147.40.248-43.812000.561167.7 3.8270.20.08047.60.237-45.115000.578157.8 3.1261.10.09347.40.225-50.018000.601149.0 2.6553.20.10546.70.215-56.520000.623143.9 2.4147.70.11546.00.213-61.822000.640138.2 2.2342.60.12445.00.211-66.525000.673131.0 1.9934.70.13639.40.206-77.428000.696123.9 1.7927.00.14439.30.208-87.930000.709119.6 1.6822.70.15138.00.208-95.75301000.483-104.735.46129.20.01657.30.625-43.0 Document Number 85020BFP93A / BFP93AWVishay Semiconductors3000.519-157.715.38100.30.02855.00.276-54.35000.525-174.09.6389.20.03959.20.184-47.08000.531172.2 6.2178.40.05761.30.153-36.710000.527165.0 5.0572.50.06960.90.151-34.612000.534159.5 4.2866.50.08159.40.149-35.215000.547151.1 3.5057.70.09956.30.145-40.718000.561143.1 2.9849.80.11552.80.138-48.220000.570138.1 2.7244.20.12750.30.138-55.222000.587131.9 2.5338.90.13947.90.139-60.925000.601123.8 2.2730.10.15440.80.129-75.228000.619114.4 2.0722.30.16538.40.136-87.830000.628108.4 1.9517.20.17435.40.140-98.5851000.807-37.814.08154.20.02669.90.906-17.33000.646-94.19.77121.80.05445.80.656-33.85000.573-126.8 6.93104.30.06537.90.510-37.18000.549-155.7 4.7088.50.07334.70.423-38.210000.544-168.8 3.8980.80.07834.40.399-39.012000.555-179.3 3.3273.50.08334.80.382-40.715000.572168.6 2.7363.60.09035.30.367-44.718000.591157.8 2.3455.00.09836.30.356-50.220000.613151.4 2.1449.10.10436.30.352-54.522000.631144.3 1.9843.50.11036.30.349-58.425000.649135.2 1.7735.20.11935.80.347-65.328000.677126.9 1.6027.30.12635.70.351-74.630000.695122.6 1.5022.80.13234.90.345-80.88101000.687-54.722.73146.00.02363.50.827-25.93000.551-119.413.13112.30.04145.20.494-42.95000.520-148.48.6897.30.04843.80.360-42.58000.519-171.6 5.7084.00.06146.10.294-39.810000.523178.3 4.6677.30.06947.20.279-39.712000.534170.0 3.9570.80.07847.50.268-40.915000.551159.6 3.2261.70.09147.30.255-45.318000.575151.4 2.7453.80.10346.20.244-51.420000.598146.1 2.5048.30.11245.60.241-56.322000.617140.0 2.3143.10.12044.60.238-60.425000.641132.3 2.0635.20.13339.40.231-69.928000.672125.4 1.8427.80.13939.10.231-79.730000.687121.6 1.7323.40.14637.90.226-87.08151000.606-68.328.45140.30.02060.80.764-31.7V CE /VI C /mAf/MHzS11S21S12S22LIN MAGANG LIN MAGANG LIN MAGANG LIN MAGANG deg deg deg degBFP93A / BFP93AWDocument Number 85020Vishay Semiconductors3000.520-133.814.66107.50.03547.70.408-47.25000.506-158.79.4394.20.04349.10.289-44.58000.510-178.4 6.1382.10.05752.60.236-39.710000.515172.5 5.0075.80.06753.50.227-39.212000.530165.1 4.2269.80.07753.40.219-40.015000.550156.5 3.4361.00.09252.20.209-44.918000.573148.2 2.9153.50.10650.00.199-51.520000.586143.5 2.6548.10.11548.90.196-56.822000.614137.7 2.4443.20.12547.70.194-61.125000.644131.1 2.1935.40.13841.10.185-72.628000.667124.1 1.9528.20.14441.00.186-82.730000.680120.2 1.8424.20.15239.50.184-90.88201000.558-79.532.26136.20.01858.50.714-35.73000.509-143.115.46104.70.03150.30.356-49.45000.502-165.39.8192.40.04053.30.249-45.38000.511177.7 6.3381.00.05656.70.205-39.010000.517169.2 5.1675.10.06757.00.199-38.112000.527162.4 4.3669.10.07756.60.193-39.215000.546154.4 3.5460.70.09255.00.184-44.518000.568146.5 2.9953.10.10752.30.175-51.620000.591142.2 2.7348.10.11750.90.173-57.222000.610136.8 2.5143.00.12749.20.170-61.925000.639130.4 2.2435.50.14042.40.163-74.828000.665123.2 2.0128.50.14742.10.164-85.230000.684119.9 1.8924.50.15440.50.162-94.38251000.525-88.234.79133.10.01758.00.676-38.53000.505-148.915.91102.80.02952.50.322-50.85000.503-168.810.0191.20.03956.30.224-45.28000.511175.1 6.4380.20.05559.30.187-37.010000.518167.2 5.2474.30.06659.50.183-36.912000.528161.0 4.4268.60.07858.40.178-38.215000.548153.2 3.5960.30.09356.30.170-43.718000.571145.9 3.0352.90.10853.60.161-51.220000.585141.5 2.7647.80.11851.80.159-57.322000.613136.0 2.5543.10.12850.00.157-62.125000.642129.6 2.2735.30.14143.40.150-75.728000.669122.7 2.0428.50.14842.70.151-86.730000.683119.4 1.9124.20.15640.90.151-96.28301000.507-95.136.47130.80.01657.90.644-46.6V CE /VI C /mAf/MHzS11S21S12S22LIN MAGANG LIN MAGANG LIN MAGANG LIN MAGANG deg deg deg deg Document Number 85020BFP93A / BFP93AWVishay SemiconductorsTypical Characteristics (T amb = 25 °C unless otherwise specified)3000.506-153.116.13101.40.02754.40.299-51.25000.506-171.510.1090.40.03658.70.208-44.58000.515173.2 6.4879.60.05561.10.176-36.710000.523166.1 5.2874.00.06660.90.173-35.712000.531159.9 4.4568.20.07760.00.169-37.015000.551152.4 3.6059.90.09357.40.162-42.718000.574145.2 3.0552.70.10854.40.154-50.820000.585141.0 2.7647.40.11952.60.152-56.922000.613135.7 2.5742.80.12850.80.150-62.025000.644129.2 2.2835.10.14143.90.143-76.228000.669122.8 2.0428.50.14943.20.145-87.630000.685119.21.9124.20.15641.40.144-97.7V CE /VI C /mAf/MHzS11S21S12S22LIN MAGANG LIN MAGANG LIN MAGANG LIN MAGANG deg deg deg deg Figure 1. Total Power Dissipation vs. Ambient Temperature Figure 2. Transition Frequency vs. Collector Current 0501001502002503000204060801001201401609612159P -T o t a l P o w e r D i s s i p a t i o n (m W )t o t T amb -Ambient T emperature (°C )010002000300040005000600070001020304050I C –Collector Current (mA )12880f –T r a n s i t i o n F r e q u e n c y (M H z )T Figure 3. Collector Base Capacitance vs. Collector Base VoltageFigure 4. Noise Figure vs. Collector Current0.00.20.40.60.81.0048121620V CB –Collector Base Voltage (V )12881C –C o l l e c t o r B a s e C a p a c i t a n c e (p F )c b 01234510152025I C –Collector Current (mA )12882F –N o i s e F i g u r e (d B )BFP93A / BFP93AWDocument Number 85020Vishay SemiconductorsV CE = 8 V, I C = 30 mA, Z 0 = 50 ΩS 11S 12S 21S 22Figure 5. Input Reflection Coefficient Figure 6. Reverse Transmission Coefficient 12990ı∞129910°180°°°Figure 7. Forward Transmission CoefficientFigure 8. Output Reflection Coefficient129920°180°°°129930jı∞ Document Number 85020BFP93A / BFP93AWVishay Semiconductors Package Dimensions in mmPackage Dimensions in mmBFP93A / BFP93AWDocument Number 85020Vishay SemiconductorsOzone Depleting Substances Policy StatementIt is the policy of Vishay Semiconductor GmbH to1.Meet all present and future national and international statutory requirements.2.Regularly and continuously improve the performance of our products, processes, distribution andoperatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.1.Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.We reserve the right to make changes to improve technical designand may do so without further notice.Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personaldamage, injury or death associated with such unintended or unauthorized use.Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, GermanyTelephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423。

STWD100NPWY3F;STWD100NYWY3F;中文规格书,Datasheet资料

This is information on a product in full production.March 2012Doc ID 14134 Rev 61/25STWD100Watchdog timer circuitDatasheet − production dataFeatures■Current consumption 13 µA typ.■Available watchdog timeout periods are3.4 ms, 6.3 ms, 102 ms and 1.6 s ■Chip enable input■Open drain or push-pull WDO output ■Operating temperature range: –40 to +125 °C ■Package SOT23-5, SC70-5 (SOT323-5)Applications■Telecommunications ■Alarm systems ■Industrial equipment ■Networking ■Medical equipment■UPS (uninterruptible power supply)Contents STWD100Contents1Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72.1Watchdog input (WDI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72.2Watchdog output (WDO) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72.3Chip enable input (EN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82.4Applications information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8Interfacing to microprocessors with bidirectional reset pins. . . . . . . . . . . . . . . . . . . 8 3Watchdog timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 5DC and AC parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 7Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 8Package marking information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 9Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 242/25Doc ID 14134 Rev 6STWD100List of tables List of tablesTable 1.SOT23-5 and SC70-5 (SOT323-5) pin description. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Table 2.Absolute maximum ratings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Table 3.Operating and AC measurement conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Table 4.DC and AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Table 5.SOT23-5 - 5-lead small outline transistor package mechanical data . . . . . . . . . . . . . . . . . 19 Table 6.SC70 (SOT323-5) – 5-lead small outline transistor package mechanical data . . . . . . . . . 21 Table 7.Ordering information scheme. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Table 8.Device versions with marking descriptions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Table 9.Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24Doc ID 14134 Rev 63/25List of figures STWD100 List of figuresFigure 1.SOT23-5 and SC70-5 (SOT323-5) package connections . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Figure 2.Logic diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Figure 3.Block diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Figure 4.Open drain WDO output connection. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Figure 5.Interfacing to microprocessors with bidirectional reset I/O. . . . . . . . . . . . . . . . . . . . . . . . . . 9 Figure 6.Power-up . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Figure 7.Normal triggering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Figure 8.Timeout without re-trigger. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Figure 9.Trigger after timeout. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Figure 10.Enable pin, EN, triggering. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Figure 11.SOT23-5 - 5-lead small outline transistor package outline. . . . . . . . . . . . . . . . . . . . . . . . . 18 Figure 12.SC70 (SOT323-5) - 5-lead small outline transistor package outline. . . . . . . . . . . . . . . . . . 20 4/25Doc ID 14134 Rev 6STWD100Description 1 DescriptionThe STWD100 watchdog timer circuits are self-contained devices which prevent systemfailures that are caused by certain types of hardware errors (non-responding peripherals,bus contention, etc.) or software errors (bad code jump, code stuck in loop, etc.).The STWD100 watchdog timer has an input, WDI, and an output, WDO. The input is used toclear the internal watchdog timer periodically within the specified timeout period, t wd. Whilethe system is operating correctly, it periodically toggles the watchdog input, WDI. If thesystem fails, the watchdog timer is not reset, a system alert is generated and the watchdogoutput, WDO, is asserted.The STWD100 circuit also has an enable pin, EN, which can enable or disable the watchdogfunctionality. The EN pin is connected to the internal pull-down resistor. The device isenabled if the EN pin is left floating.Figure 1.SOT23-5 and SC70-5 (SOT323-5) package connectionsTable 1.SOT23-5 and SC70-5 (SOT323-5) pin descriptionPin number Name Description1WDO Watchdog output2GND Ground3EN Enable pin4WDI Watchdog input5V CC Supply voltageDoc ID 14134 Rev 65/25Description STWD100 Figure 2.Logic diagramNote:WDO output is available in open drain or push-pull configuration.Figure 3.Block diagramNote:Positive pulse on enable pin EN longer than 1 µs resets the watchdog timer.6/25Doc ID 14134 Rev 6STWD100OperationDoc ID 14134 Rev 67/252 OperationThe STWD100 device is used to detect an out-of-control MCU. The user has to ensure watchdog reset within the watchdog timeout period, otherwise the watchdog output is asserted and MCU is restarted. The STWD100 can be also enabled or disabled by the chip enable pin.2.1 Watchdog input (WDI)The WDI input has to be toggled within the watchdog timeout period, t WD , otherwise thewatchdog output, WDO, is asserted. The internal watchdog timer, which counts the t WD period, is cleared either:1.by a transition on watchdog output, WDO (see Figure 8) or 2. by a pulse on enable pin, EN (see Figure 10) or3.by toggling WDI input (low-to-high on all versions and high-to-low on STWD100xW, STWD100xX and STWD100xY only).The pulses on WDI input with a duration of at least 1 µs are detected and glitches shorter than 100 ns are ignored.If WDI is permanently tied high or low and EN is tied low, the WDO toggles every 3.4 ms (t WD ) on STWD100xP and every t WD and t PW on STWD100xW, STWD100xX and STWD100xY (see Figure 8).2.2 Watchdog output (WDO)When the V CC exceeds the timer startup voltage V ST ART after power-up, the internalwatchdog timer starts counting. If the timer is not cleared within the t WD , the WDO will go low (see Figure 6).After exceeding the t WD , the WDO is asserted for t PW on STWD100xW, STWD100xX and STWD100xY regardless of possible WDI transitions (see Figure 9). On STWD100xP WDO is asserted for a minimum of 10 µs and a maximum of t WD after exceeding the t WD period (see Figure 8 and Figure 9).The STWD100 has an active low open drain or push-pull output. An external pull-up resistor connected to any supply voltage up to 6 V is required in case of open drain WDO output (see Figure 4). Select a resistor value large enough to register a logic low, and small enough to register a logic high while supplying all input current and leakage paths connected to the reset output line. A 10 k Ω pull-up resistor is sufficient in most applications.OperationSTWD1008/25Doc ID 14134 Rev 6Open drain WDO output connection2.3 Chip enable input (EN)All states mentioned in Section 2.1: Watchdog input (WDI) and Section 2.2: Watchdog output (WDO) are valid under the condition that EN is in logical low state.The behavior of EN is common to all versions (i.e. STWD100xP , STWD100xW, STWD100xX and STWD100xY).If the EN goes high after power-up in less than t WD from the moment that V CC exceeds the timer startup voltage, V ST ART , the WDO will stay high for the same time period as EN, plus t WD (see Figure 10).If the EN goes high anytime during normal operation, the WDO will go high as well, but the minimum possible WDO pulse width is 10 µs (see Figure 10).The pulses on the EN pin with a duration of at least 1 µs are detected and glitches shorter than 100 ns are ignored.2.4 Applications informationInterfacing to microprocessors with bidirectional reset pinsMicroprocessors with bidirectional reset pins can contend with the STWD100 watchdogoutput, WDO. For example, if the WDO output is driven high and the micro wants to pull it low, signal contention will result. To prevent this from occurring, connect a 4.7 k Ω resistor between the WDO output and the microprocessors reset I/O as in Figure 5.STWD100OperationDoc ID 14134 Rev 69/25Watchdog timing STWD10010/25Doc ID 14134 Rev 63 Watchdog timing分销商库存信息:STMSTWD100NPWY3F STWD100NYWY3F。

得捷电子 MT 系列微开关MT系列微小开关数据表说明书

MICRO SWITCH Miniature Toggle SwitchesMT SeriesDESCRIPTIONHoneywell MICRO SWITCH MT Series miniature toggle switches are designed to meet the need for a rugged, cost-effective toggle switch. Quality construction features include a seal between the toggle lever and bushing, and between the cover and case. These switches are designed for use inapplications in many demanding outdoor environments, where the panels are subjected to such things as vibration fromequipment, temperature extremes, dust, splashing water, and/or hose directed water.They are capable of withstanding exposure to heavyaccumulations of early morning dew that may condense on the control panel in cabs of vehicles left outdoors overnight. The MT toggle switches with metal or plastic levers are well suited for gloved-hand operation.The panel stand-off with O-ring feature available on some listings eliminates the need for behind-the-panel hardware, provides a uniform panel height, and a panel-to-cover seal.VALUE TO CUSTOMERS• Spring-loaded mechanism provides enhanced tactile feedback for toggle switch lever• High sealing level and electrical life cycle enable more uptime in field installations which helps in keeping machines working longer with less downtime• Small size allows for smaller control box/panel size to reduce weight and operator fatigueFEATURES• Miniature behind-panel size (case) enables overall control box or panel use• IEC 60529-2001, IP67, IP68 (except terminal parts) sealing for harsh-duty applications• Up to 60,000 electrical life that enhances the use time • Available with 8 circuitry options• 2- or 3- position maintained and momentary action to meet circuit and actuator requirements• UL recognized, CE certified for global usePOTENTIAL APPLICATIONSRemote control box of • Concrete pumping • Cranes• Material handling • Boom trucks• Any application with small panel constraintsDIFFERENTIATION• 60K life cycle offers an enhanced application life, keeping maintenance, replacement, and refurbishment at a minimum• High seal rating (IP68) to protect the toggle from water ingress and support more equipment uptimePORTFOLIOHoneywell offers an extensive line of MICRO SWITCH toggle switches, including the following Series: TL , NT , TW , TS , AT , and ET .Sensing and Internet of Things005437Issue 12 * These positions are momentary. All others are maintained.Sensing and Internet of Things 34 Figure 1. DImensions mm [in]2-Pole Switch7,291-Pole SwitchFigure 2. Panel CutoutPanel Cut-out005437-1-EN IL50 GLO December 2016© 2016 Honeywell International Inc. All rights reserved.m WARNINGPERSONAL INJURYDO NOT USE these products as safety or emergency stop devices or in any other application where failure of the product could result in personal injury.Failure to comply with these instructions could result in death or serious injury.m WARNINGMISUSE OF DOCUMENTATION• The information presented in this product sheet is for reference only. Do not use this document as a product installation guide.•Complete installation, operation, and maintenanceinformation is provided in the instructions supplied with each product.Failure to comply with these instructions could result in death or serious injury.Find out moreHoneywell serves its customers through a worldwide network of sales offices, representatives and distributors. For application as-sistance, current specifications, pricing or name of the nearest Authorized Distributor, contact your local sales office.To learn more about Honeywell’s sensing and switching products, call +1-815-235-6847 or 1-800-537-6945,visit , or e-mail inquiries to *********************ADDITIONAL MATERIALSThe following associated literature is available on the Honeywell web site at :• Product installation instructions • Product range guide• Product application-specific informationHoneywell Sensing and Internet of Things 9680 Old Bailes Road Fort Mill, SC 29707 Warranty/RemedyHoneywell warrants goods of its manufacture as being free of defective materials and faulty workmanship during the appli-cable warranty period. Honeywell’s standard product warranty applies unless agreed to otherwise by Honeywell in writing; please refer to your order acknowledgement or consult your local sales office for specific warranty details. If warrantedgoods are returned to Honeywell during the period of coverage, Honeywell will repair or replace, at its option, without charge those items that Honeywell, in its sole discretion, finds defec-tive. The foregoing is buyer’s sole remedy and is in lieu of all other warranties, expressed or implied, including those of merchantability and fitness for a particular purpose. In no event shall Honeywell be liable for consequential, special, or indirect damages.While Honeywell may provide application assistance personally, through our literature and the Honeywell web site, it is buyer’s sole responsibility to determine the suitability of the product in the application.Specifications may change without notice. The information we supply is believed to be accurate and reliable as of this writing. However, Honeywell assumes no responsibility for its use.。

KST06MTF;KST05MTF;中文规格书,Datasheet资料

KST05/06NPN Epitaxial Silicon TransistorAbsolute Maximum Ratings T a =25°C unless otherwise notedElectrical Characteristics T a =25°C unless otherwise noted* Pulse Test: PW ≤300µs, Duty Cycle ≤2%Marking CodeSymbol ParameterValue Units V CBO Collecto-Base Voltage: KST05: KST066080V V V CEOCollector-Emitter Voltage: KST05: KST066080V V V EBO Emitter-Base Voltage 4V I C Collector Current500mA P C Collector Power Dissipation 350mW T STG Storage Temperature150°C R TH (j-a)Thermal Resistance junction to Ambient357°C/WSymbol ParameterTest ConditionMin.Max.Units BV CEO* Collector-Emitter Breakdown Voltage: KST05: KST06I C =1mA, I B =06080V V BV EBO Emitter-Base Breakdown Voltage I E =100µA, I C =04V I CBOCollector Cut-off Current: KST05: KST06V CB =60V, I E =0V CB =80V, I E =00.10.1µA µA I CEO Collector Cut-off Current V CE =60V, I B =0 0.1µAh FE DC Current GainV CE =1V, I C =10mA V CE =1V, I C =100mA 5050V CE (sat)Collector-Emitter Saturation Voltage I C =100mA, I B =10mA 0.25V V BE (on)Base-Emitter On Voltage V CE =1V, I C =100mA1.2V f TCurrent Gain Bandwidth ProductV CE =2V, I C =100mA, f=100MHz100MHzType KST05KST06Mark1H1GKST05/06Driver Transistor•Collector-Emitter Voltage: V CEO = KST05: 60VKST06: 80V•Collector Power Dissipation: P C (max) = 350mW •Complement to KST55/561HMarking1. Base2. Emitter3. CollectorSOT-23123KST05/06TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet Identification Product Status DefinitionAdvance InformationFormative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.PreliminaryFirst ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.FACT™FACT Quiet series™FAST ®FASTr™FRFET™GlobalOptoisolator™GTO™HiSeC™I 2C™ImpliedDisconnect™ISOPLANAR™LittleFET™MicroFET™MicroPak™MICROWIRE™MSX™MSXPro™OCX™OCXPro™OPTOLOGIC ®OPTOPLANAR™PACMAN™POP™Power247™PowerTrench ®QFET™QS™QT Optoelectronics™Quiet Series™RapidConfigure™RapidConnect™SILENT SWITCHER ®SMART START™SPM™Stealth™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic™TruTranslation™UHC™UltraFET ®VCX™ACEx™ActiveArray™Bottomless™CoolFET™CROSSVOLT ™DOME™EcoSPARK™E 2CMOS™EnSigna™Across the board. Around the world.™The Power Franchise™Programmable Active Droop™分销商库存信息:FAIRCHILDKST06MTF KST05MTF。

MMBFJ113;中文规格书,Datasheet资料

r
- TRANSCONDUCTANCE (mmhos) 100
r DS
T A = 25°C TYP V GS(off) = - 2.0 V
100
DS
- DRAIN "ON" RESISTANCE (Ω)
8
- 0.4 V
50
50
6
- 0.6 V
20
g
fs I DSS , g fs @ V DS = 15V, V GS = 0 PULSED r DS @ 1.0 mA, V GS = 0 V GS(off) @ V DS = 15V, I D = 1.0 nA _
Features
• This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. • Sourced from Process 51. • Source & Drain are interchangeable.

/
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 — N-Channel Switch
Electrical Characteristics
Symbol
Off Characteristics
Ta = 25°C unless otherwise noted
Parameter
Test Condition
Min.
-35
Typ.
Max.
Units
V
BV(BR)GSS Gate-Source Breakdown Voltage IG = -1.0A, VDS = 0 IGSS VGS(off) Gate Reverse Current Gate-Source Cutoff Voltage VGS = -15V, VDS = 0 VDS = 5.0V, ID = 1.0A 111 112 MMBFJ112_SB51338 113

LM93CIMT资料

LM93Hardware Monitor with Integrated Fan Control for Server Management1.0General DescriptionThe LM93,hardware monitor,has a two wire digital interface compatible with SMBus ing an 8-bit Σ∆ADC,the LM93measures the temperature of two remote diode con-nected transistors as well as its own die and 16power supply voltages.To set fan speed,the LM93has two PWM outputs that are each controlled by up to four temperature zones.The fan-control algorithm is lookup table based.The LM93includes a digital filter that can be invoked to smooth temperature read-ings for better control of fan speed.The LM93has four tachometer inputs to measure fan speed.Limit and status registers for all measured values are included.The LM93builds upon the functionality of previous mother-board management ASICs and uses some of the LM85’s features (i.e.smart tachometer mode).It also adds measure-ment and control support for dynamic Vccp monitoring and PROCHOT.It is designed to monitor a dual processor Xeon class motherboard with a minimum of external components.2.0Featuresn 8-bit Σ∆ADCn Monitors 16power suppliesn Monitors 2remote thermal diodes n Internal ambient temperature sensingn Programmable autonomous fan control based on temperature readings with fan boost support n Fan control based on 13-step lookup table n Temperature reading digital filtern 1.0˚C digital temperature sensor resolution n 0.5˚C temperature resolution for fan control n 2PWM fan speed control outputs n 4fan tachometer inputsnDual processor thermal throttling (PROCHOT)monitoringn Dual dynamic VID monitoring (6VIDs per processor)n 8general purpose I/Os:—4can be configured as fan tachometer inputs—2can be configured to connect to THERMTRIP from a processor—2are standard GPIOs that could be used to monitor IERR signaln 2general purpose inputs that can be used to monitor SCSI termination signalsn Limit register comparisons of all monitored values n 2-wire,SMBus 2.0compliant,serial digital interface —Supports byte/block read and write—Configurable slave address (tri-level pin selects 1of 3possible addresses)n 2.5V reference voltage output n 56-pin TSSOP package n XOR-tree test mode3.0Key Specificationsn Voltage Measurement Accuracy ±2%FS (max)n Resolution8-bits,1˚C n Temperature Sensor Accuracy ±3˚C (max)nTemperature Range:—LM93Operational0˚C to +85˚C —Remote Temp Accuracy 0˚C to +125˚C n Power Supply Voltage +3.0V to +3.6Vn Power Supply Current 0.9mA4.0Applicationsn Serversn Workstationsn Multi-Microprocessor based equipment5.0Ordering InformationOrder Number NS Package Number Transport media LM93CIMT MTD5634units in railLM93CIMTXMTD561000units in tape-and-reelI 2C is a registered trademark of the Philips Corporation.April 2004LM93Hardware Monitor with Integrated Fan Control for Server Management©2004National Semiconductor Corporation 6.0Block Diagram20068201L M 93 27.0ApplicationBaseboard management of a Dual processor server.Two LM93s may be required to manage a quad processor base-board.The block diagram of LM93hardware is illustrated below.The hardware implementation is a single chip ASIC solution.2Way Xeon Server Management20068205LM93 3Table of Contents1.0General Description .....................................................................................................................................12.0Features .......................................................................................................................................................13.0Key Specifications ........................................................................................................................................14.0Applications ..................................................................................................................................................15.0Ordering Information ....................................................................................................................................16.0Block Diagram ..............................................................................................................................................27.0Application ....................................................................................................................................................38.0Connection Diagram ....................................................................................................................................79.0Pin Descriptions ...........................................................................................................................................810.0Server Terminology ..................................................................................................................................1011.0Recommended Implementation ................................................................................................................1112.0Functional Description ..............................................................................................................................1212.1MONITORING CYCLE TIME ................................................................................................................1212.2Σ∆A/D INHERENT AVERAGING ..........................................................................................................1212.3TEMPERATURE MONITORING ...........................................................................................................1212.3.1Temperature Data Format ...............................................................................................................1212.3.2Thermal Diode Fault Status .............................................................................................................1212.4VOLTAGE MONITORING ......................................................................................................................1212.5RECOMMENDED EXTERNAL SCALING RESISTORS FOR +12V POWER RAILS ..........................1312.6RECOMMENDED EXTERNAL SCALING CIRCUIT FOR −12V POWER INPUT ................................1312.7DYNAMIC Vccp MONITORING USING VID .........................................................................................1512.8V REF OUTPUT .......................................................................................................................................1512.9PROCHOT BACKGROUND INFORMATION ........................................................................................1512.10PROCHOT MONITORING ..................................................................................................................1612.11PROCHOT OUTPUT CONTROL ........................................................................................................1612.12FAN SPEED MEASUREMENT ...........................................................................................................1712.13SMART FAN SPEED MEASUREMENT .............................................................................................1713.0Inputs/Outputs ..........................................................................................................................................1713.1ALERT OUTPUT ...................................................................................................................................1713.2RESET INPUT/OUTPUT .......................................................................................................................1713.3PWM1AND PWM2OUTPUTS .............................................................................................................1713.4SCSI_TERMx INPUTS ..........................................................................................................................1713.5VRD1_HOT AND VRD2_HOT INPUTS ................................................................................................1813.6GPIO PINS ............................................................................................................................................1813.7FAN TACH INPUTS ...............................................................................................................................1814.0SMBus Interface .......................................................................................................................................1814.1SMBUS ADDRESSING .........................................................................................................................1814.2DIGITAL NOISE EFFECT ON SMBUS COMMUNICATION .................................................................1814.3GENERAL SMBUS TIMING ..................................................................................................................1814.4SMBUS ERROR SAFETY FEATURES ................................................................................................1914.5SERIAL INTERFACE PROTOCOLS .....................................................................................................1914.5.1Address Incrementing ......................................................................................................................1914.5.2Block Command Code Summary ....................................................................................................2014.5.3Write Operations .............................................................................................................................2014.5.3.1Write Byte ...................................................................................................................................2014.5.3.2Write Word .................................................................................................................................2014.5.3.3SMBus Write Block to Any Address ...........................................................................................2114.5.3.4I 2C ™Block Write .......................................................................................................................2114.5.4Read Operations ..............................................................................................................................2214.5.4.1Read Byte ..................................................................................................................................2214.5.4.2Read Word .................................................................................................................................2214.5.4.3SMBus Block-Write Block-Read Process Call ...........................................................................2214.5.4.4Simulated SMBus Block-Write Block-Read Process Call ..........................................................2414.5.4.5SMBus Fixed Address Block Reads ..........................................................................................2414.5.4.6I 2C Block Reads .........................................................................................................................2514.6READING AND WRITING 16-BIT REGISTERS ...................................................................................2515.0Using The LM93.......................................................................................................................................2615.1POWER ON ..........................................................................................................................................2615.2RESETS ................................................................................................................................................2615.3ADDRESS SELECTION ........................................................................................................................2615.4DEVICE SETUP ....................................................................................................................................2615.5ROUND ROBIN VOLTAGE/TEMPERATURE CONVERSION CYCLE . (26)L M 934LM93Table of Contents(Continued)15.6ERROR STATUS REGISTERS (27)15.6.1ASF Mode (27)15.7MASKING,ERROR STATUS AND ALERT (27)15.8LAYOUT AND GROUNDING (27)15.9THERMAL DIODE APPLICATION (27)15.9.1Accuracy Effects of Diode Non-Ideality Factor (28)15.9.2PCB Layout for Minimizing Noise (28)15.10FAN CONTROL (28)15.10.1Automatic Fan Control Algorithm (28)15.10.2Fan Control Temperature Resolution (30)15.10.3Zone1-4to PWM1-2Binding (31)15.10.4Fan Control Duty Cycles (31)15.10.5Alternate PWM Frequencies (31)15.10.6Fan Control Priorities (31)15.10.7PWM to100%Conditions (31)15.10.8VRDx_HOT Ramp-Up/Ramp-Down (32)15.10.9PROCHOT Ramp-Up/Ramp-Down (32)15.10.10Manual PWM Override (32)15.10.11Fan Spin-Up Control (32)15.11XOR TREE TEST (33)16.0Registers (34)16.1REGISTER WARNINGS (34)16.2REGISTER SUMMARY TABLE (34)16.3FACTORY REGISTERS00h–3Fh (40)16.3.1Register00h XOR Test (40)16.3.2Register01h SMBus Test (40)16.3.3Register3Eh Manufacturer ID (40)16.3.4Register3Fh Version/Stepping (40)16.4BMC ERROR STATUS REGISTERS40h–47h (41)16.4.1Register40h B_Error Status1 (41)16.4.2Register41h B_Error Status2 (42)16.4.3Register42h B_Error Status3 (42)16.4.4Register43h B_Error Status4 (43)16.4.5Register44h B_P1_PROCHOT Error Status (43)16.4.6Register45h B_P2_PROCHOT Error Status (44)16.4.7Register46h B_GPI Error Status (44)16.4.8Register47h B_Fan Error Status (45)16.5HOST ERROR STATUS REGISTERS (45)16.5.1Register48h H_Error Status1 (45)16.5.2Register49h H_Error Status2 (46)16.5.3Register4Ah H_Error Status3 (47)16.5.4Register4Bh H_Error Status4 (48)16.5.5Register4Ch H_P1_PROCHOT Error Status (49)16.5.6Register4Dh B_P2_PROCHOT Error Status (50)16.5.7Register4Eh H_GPI Error Status (51)16.5.8Register4Fh H_Fan Error Status (52)16.6VALUE REGISTERS (52)16.6.1Registers50–53h Unfiltered Temperature Value Registers (52)16.6.2Registers54–55h Filtered Temperature Value Registers (52)16.6.3Register56–65h A/D Channel Voltage Registers (53)16.6.4Register67h Current P1_PROCHOT (53)16.6.5Register68h Average P1_PROCHOT (54)16.6.6Register69h Current P2_PROCHOT (54)16.6.7Register6Ah Average P2_PROCHOT (54)16.6.8Register6Bh GPI State (55)16.6.9Register6Ch P1_VID (55)16.6.10Register6Dh P2_VID (55)16.6.11Register6E–75h Fan Tachometer Readings (56)16.7LIMIT REGISTERS (57)16.7.1Registers78–7Fh Temperature Limit Registers (57)16.7.2Registers80–83h Fan Boost Temperature Registers (57)5Table of Contents(Continued)16.7.3Registers 90–AFh Voltage Limit Registers ...................................................................................5816.7.4Register B0–B1h PROCHOT User Limit Registers ......................................................................5916.7.5Register B2–B3h Dynamic Vccp Limit Offset Registers ...............................................................6016.7.6Register B4–BBh Fan Tach Limit Registers .................................................................................6116.8SETUP REGISTERS .............................................................................................................................6216.8.1Register BCh Special Function Control 1(Voltage Hysteresis and Fan Control Filter Enable)...6216.8.2Register BDh Special Function Control 2(Smart Tach Mode Enable and Fan Control Temperature Resolution Control).....................................................................................................................................6316.8.3Register BEh GPI/VID Level Control ............................................................................................6316.8.4Register BFh PWM Ramp Control ................................................................................................6416.8.5Register C0h Fan Boost Hysteresis (Zones 1/2)..........................................................................6416.8.6Register C1h Fan Boost Hysteresis (Zones 3/4)..........................................................................6516.8.7Register C2h Zones 1/2Spike Smoothing Control .......................................................................6516.8.8Register C3h Zones 1/2MinPWM and Hysteresis .......................................................................6616.8.9Register C4h Zones 3/4MinPWM and Hysteresis .......................................................................6616.8.10Register C5h GPO ......................................................................................................................6716.8.11Register C6h PROCHOT Override ..............................................................................................6816.8.12Register C7h PROCHOT Time Interval ......................................................................................6916.8.13Register C8h PWM1Control 1...................................................................................................7016.8.14Register C9h PWM1Control 2...................................................................................................7116.8.15Register CAh PWM1Control 3...................................................................................................7216.8.16Register CBh Special Function PWM1Control 4.......................................................................7216.8.17Register CCh PWM2Control 1...................................................................................................7316.8.18Register CDh PWM2Control 2...................................................................................................7416.8.19Register CEh PWM2Control 3...................................................................................................7516.8.20Register CFh Special Function PWM2Control 4.......................................................................7516.8.21Register D0h–D3h Zone 1to 4Base Temperatures ..................................................................7616.8.22Register D4h–DFh Lookup Table Steps —Zone 1/2and Zone 3/4Offset Temperature ...........7616.8.23Register E0h Special Function TACH to PWM Binding ..............................................................7716.8.24Register E2h LM93Status Control .............................................................................................7816.8.25Register E3h LM93Configuration ...............................................................................................7916.9SLEEP STATE CONTROL AND MASK REGISTERS ..........................................................................8016.9.1Register E4h Sleep State Control ................................................................................................8016.9.2Register E5h S1GPI Mask ...........................................................................................................8116.9.3Register E6h S1Tach Mask .........................................................................................................8116.9.4Register E7h S3GPI Mask ...........................................................................................................8216.9.5Register E8h S3Tach Mask .........................................................................................................8216.9.6Register E9h S3Temperature/Voltage Mask ................................................................................8216.9.7Register EAh S4/5GPI Mask .......................................................................................................8316.9.8Register EBh S4/5Temperature/Voltage Mask ............................................................................8316.10OTHER MASK REGISTERS ...............................................................................................................8416.10.1Register ECh GPI Error Mask .....................................................................................................8416.10.2Register EDh Miscellaneous Error Mask ....................................................................................8416.10.3Register EEh Special Function Zone 1Adjustment Offset .........................................................8516.10.4Register EFh Special Function Zone 2Adjustment Offset .........................................................8517.0Absolute Maximum Ratings .....................................................................................................................8618.0Operating Ratings ...................................................................................................................................8619.0Data Sheet Version History ......................................................................................................................9120.0Physical Dimensions .. (92)L M 93 6LM93 8.0Connection Diagram56Pin TSSOP Array20068202NS Package MTD56Top ViewNS Order Numbers:LM93CIMT(34units per rail),orLM93CIMTX(1000units per tape-and-reel)79.0Pin DescriptionsSymbol Pin #Type FunctionGPIO_0/TACH11Digital I/O (Open-Drain)Can be configured as fan tach input or a general purpose open-drain digital I/O.GPIO_1/TACH22Digital I/O (Open-Drain)Can be configured as fan tach input or a general purpose open-drain digital I/O.GPIO_2/TACH33Digital I/O (Open-Drain)Can be configured as fan tach input or a general purpose open-drain digital I/O.GPIO_3/TACH44Digital I/O (Open-Drain)Can be configured as fan tach input or a general purpose open-drain digital I/O..GPIO_4/P1_THERMTRIP 5Digital I/O (Open-Drain)A general purpose open-drain digital I/O.Can be configured to monitor a CPU’s THERMTRIP signal to mask other errors.GPIO_5/P2_THERMTRIP 6Digital I/O (Open-Drain)A general purpose open-drain digital I/O.Can be configured to monitor a CPU’s THERMTRIP signal to mask other errors.GPIO_67Digital I/O (Open-Drain)Can be used to detect the state of CPU1IERR or a general purpose open-drain digital I/OGPIO_78Digital I/O (Open-Drain)Can be used to detect the state of CPU2IERR or a general purpose open-drain digital I/O VRD1_HOT 9Digital Input CPU1voltage regulator HOT VRD2_HOT 10Digital Input CPU2voltage regulator HOTSCSI_TERM111Digital Input SCSI Channel 1termination fuse.Could also be used as a general purpose input to trigger an error event.SCSI_TERM212Digital Input SCSI Channel 2termination fuse.Could also be used as a general purpose input to trigger an error event.SMBDAT 13Digital I/O (Open-Drain)Bidirectional System Management Bus Data.Output configured as 5V tolerant open-drain.SMBus 2.0compliant.SMBCLK 14Digital Input System Management Bus Clock.Driven by an open-drain output,and is 5V tolerant.SMBus 2.0Compliant.ALERT/XtestOut15Digital Output (Open-Drain)Open-drain ALERT output used in an interrupt driven system to signal that an error event has occurred.Masked error events do not activate the ALERT output.When in XOR tree test mode,functions as XOR Tree output.RESET 16Digital I/O (Open-Drain)Open-drain reset output when power is first applied to the ed as a reset for devices powered by 3.3V stand-by.After reset,this pin becomes a reset input.See section 6.2for more information.AGND 17GROUND Input Analog GroundV REF18Analog Output 2.5V used for external ADC reference,or as a V REF reference voltageREMOTE1−19Remote Thermal Diode_1-Input (CPU 1THERMDC)This is the negative input (current sink)from the CPU1thermal diode.Connected to THERMDC pin of Pentium processor or the emitter of a diode connected MMBT3904NPN transistor.Serves as the negative input into the A/D for thermal diode voltage measurements.A 100pF capacitor is optional and can be connected between REMOTE1−and REMOTE1+.REMOTE1+20Remote Thermal Diode_1+I/O (CPU1THERMDA)This is a positive connection to the CPU1thermal diode.Serves as the positive input into the A/D for thermal diode voltagemeasurements.It also serves as a current source output thatforward biases the thermal diode.Connected to THERMDA pin of Pentium processor or the base of a diode connected MMBT3904NPN transistor.A 100pF capacitor is optional and can be connected between REMOTE1−and REMOTE1+.L M 93 89.0Pin Descriptions(Continued)Symbol Pin#Type FunctionREMOTE2−21Remote ThermalDiode_2-Input(CPU2THERMDC)This is the negative input(current sink)from the CPU2thermal diode.Connected to THERMDC pin of Pentium processor or the emitter of a diode connected MMBT3904NPN transistor.Serves as the negative input into the A/D for thermal diode voltage measurements.A100pF capacitor is optional and can be connected between REMOTE2−and REMOTE2+.REMOTE2+22Remote ThermalDiode_2+I/O(CPU2THERMDA)This is a positive connection to the CPU2thermal diode.Serves as the positive input into the A/D for thermal diode voltage measurements.It also serves as a current source output that forward biases the thermal diode.Connected to THERMDA pin of Pentium processor or the base of a diode connected MMBT3904 NPN transistor.A100pF capacitor is optional and can be connected between REMOTE2−and REMOTE2+.AD_IN123Analog Input(+12V1)Analog Input for+12V Rail1monitoring,for CPU1voltage regulator.External attenuation resistors required such that12V is attenuatedto0.927V.AD_IN224Analog Input(+12V2)Analog Input for+12V Rail2monitoring,for CPU2voltage regulator.External attenuation resistors required such that12V is attenuatedto0.927V.AD_IN325Analog Input(+12V3)Analog Input for+12V Rail3,for Memory/3GIO slots.Externalattenuation resistors required such that12V is attenuated to0.927V.AD_IN426Analog Input(FSB_Vtt)Analog input for1.2V monitoringAD_IN527Analog Input(3GIO/PXH/MCH_Core)Analog input for1.5V monitoring.AD_IN628Analog Input(ICH_Core)Analog input for1.5V monitoring.AD_IN7(P1_Vccp)29Analog Input(CPU1_Vccp)Analog input for+Vccp(processor voltage)monitoring.AD_IN8(P2_Vccp)30Analog Input(CPU2_Vccp)Analog input for+Vccp(processor voltage)monitoring.AD_IN931Analog Input(+3.3V)Analog input for+3.3V monitoring.AD_IN1032Analog Input(+5V)Analog input for+5V monitoring silver box supply monitoring.AD_IN1133Analog Input(SCSI_Core)Analog input for+2.5V monitoring.AD_IN1234Analog Input(Mem_Core)Analog input for+1.969V monitoring.AD_IN1335Analog Input(Mem_Vtt)Analog input for+0.984V monitoring.AD_IN1436Analog Input(Gbit_Core)Analog input for+0.984V S/B monitoring.AD_IN1537Analog Input(-12V)Analog input for-12V monitoring.External resistors required to scaleto positive level.Full scale reading at1.236V.Address Select383level analog input This input selects the lower two bits of the LM93SMBus slaveaddress.LM9399.0Pin Descriptions(Continued)Symbol Pin #TypeFunctionAD_IN1639POWER (V DD )+3.3V standby powerV DD power input for LM93.Generally this is connected to +3.3V standby power.The LM93can be powered by +3.3V if monitoring in low power states is not required,but power should be applied to this input before any other pins.This pin also serves as the analog input to monitor the 3.3Vstand-by (SB)voltage.It is necessary to bypass this pin with a 0.1µF in parallel with 100pF.A bulk capacitance of 10µF should be in the near vicinity.The 100pF should be closest to the power pin.GND 40GROUNDDigital Ground.Digital ground and analog ground need to be tied together at the chip then both taken to a low noise system ground.A voltage difference between analog and digital ground may cause erroneous results.PWM141Digital Output (Open-Drain)Fan control output 1.PWM242Digital Output (Open-Drain)Fan control output 2P1_VID043Digital Input Voltage Identification signal from the processor.P1_VID144Digital Input Voltage Identification signal from the processor.P1_VID245Digital Input Voltage Identification signal from the processor.P1_VID346Digital Input Voltage Identification signal from the processor.P1_VID447Digital Input Voltage Identification signal from the processor.P1_VID548Digital Input Voltage Identification signal from the processor.P1_PROCHOT 49Digital I/O (Open-Drain)Connected to CPU1PROCHOT (processor hot)signal through a bidirectional level shifter.P2_PROCHOT 50Digital I/O (Open-Drain)Connected to CPU2PROCHOT (processor hot)signal through a bi-directional level shifter.P2_VID051Digital Input Voltage Identification signal from the processor.P2_VID152Digital Input Voltage Identification signal from the processor.P2_VID253Digital Input Voltage Identification signal from the processor.P2_VID354Digital Input Voltage Identification signal from the processor.P2_VID455Digital Input Voltage Identification signal from the processor.P2_VID556Digital InputVoltage Identification signal from the processor.The overscore indicates the signal is active low (“Not”).10.0Server TerminologyA/D Analog to Digital Converter ACPI Advanced Configuration and Power InterfaceALERTSMBus signal to bus master that an event occurred that has been flagged for attention.ASF Alert Standard Format BMC Baseboard Micro-Controller BW BandwidthDIMM Dual inline memory module DP Dual-processorECC Error checking and correcting FRU Field replaceable unit FSBFront side busFW Firmware Gb Gigabit GB Gigabyte Gbe Gigabit Ethernet GPIO General purpose I/O HW HardwareI 2C Inter integrated circuit (bus)LAN Local area networkLVDS Low-Voltage Differential Signaling Mb Megabit MB Megabyte MP Multi-processorMTBFMean time between failuresL M 9310。

SUPERFET III MOSFET 说明书

NTMT110N65S3HFMOSFET - Power,N-Channel, SUPERFET) III, FRFET)650 V, 30 A, 110 m WNTMT110N65S3HFDescriptionSUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional components and improve system reliability.The Power88 package is an ultra−slim surface−mount package (1mm high) with a low profile and small footprint (8x8 mm2). SUPERFET III MOSFET in a Power88 package offers excellent switching performance due to lower parasitic source inductance and separated power and drive sources. Power88 offers Moisture Sensitivity Level 1 (MSL 1).Features•700 V @ T J = 150 °C•Typ R DS(on) = 98 m W•Ultra Low Gate Charge (Typ. Q g = 62 nC)•Low Effective Output Capacitance (Typ. C oss(eff.) = 522 pF)•100% Avalanche Tested•These Devices are Pb−Free and are RoHS CompliantApplications•Telecom / Server Power Supplies•Industrial Power Supplies•UPS / Solar•Lighting / Charger / AdapterMARKING DIAGRAMGPOWER MOSFETV DSS R DS(ON) MAX I D MAX650 V110 m W @ 10 V30 AS2S2S1GPower88PQFN4 8X8 2PCASE 483APSee detailed ordering and shipping information on page 2 of this data sheet.ORDERING INFORMATIONNTMT110N65S3HFAWLYWWNTMT110N65S3HF= Specific Device CodeA= Assembly LocationWL= Wafer LotY= YearWW= Work WeekABSOLUTE MAXIMUM RATINGS (T C = 25°C, Unless otherwise specified)Symbol Parameter Value Unit V DSS Drain to Source Voltage650V V GSS Gate to Source Voltage DC±30VAC (f > 1 Hz)±30VI D Drain Current Continuous (T C = 25°C)30AContinuous (T C = 100°C)19.5I DM Drain Current Pulsed (Note1)69AE AS Single Pulsed Avalanche Energy (Note2)380mJI AS Avalanche Current (Note2) 4.4AE AR Repetitive Avalanche Energy (Note1) 2.4mJdv/dt MOSFET dv/dt100V/ns Peak Diode Recovery dv/dt (Note3)50P D Power Dissipation(T C = 25°C)240WDerate Above 25°C 1.92W/°C T J, T STG Operating and Storage Temperature Range−55 to +150°C T L Maximum Lead Temperature for Soldering, 1/8″ from Case for 5s300°C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.1.Repetitive rating: pulse−width limited by maximum junction temperature.2.I AS = 4.4 A, R G = 25 W starting T J = 25°C3.I SD≤ 15 A, di/dt ≤100 A/m s, V DD≤400 V, starting T J = 25°CTHERMAL CHARACTERISTICSSymbol Parameter Value Unit R q JC Thermal Resistance, Junction to Case, Max.0.52°C/W R q JA Thermal Resistance, Junction to Ambient, Max. (Note 4)454.Device on 1 in2 pad 2 oz copper pad on 1.5 x 1.5 in. board of FR−4 material.ORDERING INFORMATIONPart Number Top Marking Package Reel Size Tape Width Shipping†NTMT110N65S3HF NTMT110N65S3HF Power8813”13.3 mm3000 / Tape & Reel†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.ELECTRICAL CHARACTERISTICS (T C = 25°C unless otherwise noted)Symbol Parameter Test Condition Min Typ Max Unit OFF CHARACTERISTICSBV DSS Drain to Source Breakdown Voltage V GS = 0V, I D = 1 mA, T J = 25°C650−−VV GS = 0V, I D = 1 mA, T J = 150°C700−−VD BV DSS /D T J Breakdown Voltage TemperatureCoefficientI D = 10 mA, referenced to 25°C−0.64−V/°CI DSS Zero Gate Voltage Drain Current V DS = 650V, V GS= 0V−−10m AV DS = 520V, T C= 125 °C−16I GSS Gate to Source Leakage Current V GS = ±30V, V DS= 0V−−±100nA ON CHARACTERISTICSV GS(th)Gate Threshold Voltage V GS = V DS, I D = 0.74 mA 3.0− 5.0V R DS(on)Static Drain to Source On Resistance V GS = 10 V, I D = 15 A−98110m Wg FS Forward Transconductance V DS = 20 V, I D = 15 A−18−S DYNAMIC CHARACTERISTICSC iss Input Capacitance V DS = 400 V, V GS = 0 V, f = 1 MHz−2635−pFC oss Output Capacitance−52−pF C oss(eff.)Effective Output Capacitance V DS = 0 V to 400 V, V GS = 0 V−522−pF C oss(er.)Energy Related Output Capacitance V DS = 0 V to 400 V, V GS = 0 V−91−pFQ g(tot)Total Gate Charge at 10 V V DS = 400 V, I D = 15 A, V GS = 10 V(Note 5)−62−nCQ gs Gate to Source Gate Charge−18−nC Q gd Gate to Drain “Miller” Charge−25−nC ESR Equivalent Series Resistance f = 1 MHz− 2.8−W SWITCHING CHARACTERISTICSt d(on)Turn-On Delay Time V DD = 400 V, I D = 15 A,V GS = 10 V, R GEN = 4.7 W(Note 5)−28−nst r Rise Time−14−ns t d(off)Turn-Off Delay Time−72−ns t f Fall Time− 3.3−ns SOURCE−DRAIN DIODE CHARACTERISTICSI S Maximum Continuous Source to Drain Diode Forward Current−−30AI SM Maximum Pulsed Source to Drain Diode Forward Current−−69AV SD Source to Drain Diode Forward Voltage V GS = 0 V, I SD = 15 A−− 1.3Vt rr Reverse Recovery Time V GS = 0 V, I SD = 15 A,di F/dt = 100 A/m s −89−nsQ rr Reverse Recovery Charge−355−nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.5.Essentially independent of operating temperature typical characteristics.TYPICAL CHARACTERISTICSFigure 1. On-Region Characteristics Figure 2. Transfer CharacteristicsFigure 3. On-Resistance Variation vs. DrainCurrent and Gate VoltageFigure 4. Body Diode Forward Voltage Variation vs. Source Current and TemperatureFigure 5. Capacitance Characteristics Figure 6. Gate Charge CharacteristicsV DS , Drain-Source Voltage [V]I D , D r a i n C u r r e n t [A ]V GS , Gate-Source Voltage [V]I D , D r a i n C u r r e n t [A ]I D , Drain Current [A]R D S (O N ), D r a i n -S o u r c e O n -R e s i s t a n c e [W]V SD , Body Diode Forward Voltage [V]I S , R e v e r s e D r a i n C u r r e n t [A ]0.00.0010.0110000.5 1.0 1.5 2.00.1110100V DS , Drain-Source Voltage [V]C a p a c i t a n c e [p F ]0.011100000101001000100000.11101000.2110201101000.00.10.20.3020406080Q g , Total Gate Charge [nC]V G S , G a t e -S o u r c e V o l t a g e [V ]210468TYPICAL CHARACTERISTICSFigure 7. Breakdown Voltage Variationvs. TemperatureFigure 8. On-Resistance Variant vs. TemperatureFigure 9. Maximum Safe Operation AreaFigure 10. Maximum Drain Currentvs. Case TemperatureFigure 11. E OSSvs. Drain to Source VoltageT J , Junction Temperature [5C]B V D S S , [N o r m a l i z e d ] D r a i n -S o u r c e B r e a k d o w n V o l t a g e0.80.91.2−500501501.01.1100T J , Junction Temperature [5C]R D S (o n ), [N o r m a l i z e d ] D r a i n -S o u r c e O n -R e s i s t a n c e0.00.53.0−500501501.01.51002.02.5T C , Case Temperature [5C]I D , D r a i n C u r r e n t [A ]102550751501252030100V DS , Drain to Source Voltage [V]E O S S , [m J ]4013026065052081216390V DS , Drain-Source Voltage [V]I D , D r a i n C u r r e n t [A ]0.010.1110100200TYPICAL PERFORMANCE CHARACTERISTICS (Continued)Figure 12. Transient Thermal Response Curvet, Rectangular Pulse Duration (s)r (t ), N o r m a l i z e d E f f e c t i v e T r a n s i e n t T h e r m a l R e s i s t a n c e0.0010.010.11210−210−110010110210−5Figure 13. Gate Charge Test Circuit & WaveformFigure 14. Resistive Switching Test Circuit & WaveformsFigure 15. Unclamped Inductive Switching Test Circuit & WaveformsVV DSV GSV GSChargeV DSI G V DD V V DDTimeI ASBV DSSI D (t)V DS (t)E AS +12@LI AS2Figure 16. Peak Diode Recovery dv/dt Test Circuit & WaveformsV DDV GS (Driver)I SD (DUT)V DS (DUT)I , Body Diode Forward CurrentBody Diode Reverse CurrentBody DiodeForward Voltage DropPACKAGE DIMENSIONSPQFN4 8X8, 2PCASE 483APISSUE ONTMT110N65S3HF 10ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.PUBLICATION ORDERING INFORMATIONTECHNICAL SUPPORT North American Technical Support:Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910LITERATURE FULFILLMENT :Email Requests to:*******************ON Semiconductor Website: Europe, Middle East and Africa Technical Support:Phone: 00421 33 790 2910For additional information, please contact your local Sales Representative ◊SUPERFET is a registered trademark of Semiconductor Components Industries, LLC. FRFET is a registered trademark of Semiconductor Com-ponents Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.NTMT110N65S3HF。

DigiTech死亡金属说明书

保证
我们以DigiTech产品为荣，并对我们的每一款产品提供如下保证：
1. 请于购买本产品十天内将本产品的保修注册卡寄回，以使本产品的保修生效。 2. DigiTech公司保证在美国正常使用的产品无材料和工艺缺陷。 3. DigiTech公司在本保证中的责任仅限于修理或更换具备缺陷证据的部件，并对已取
༅ⳳ
⫼᠋᠟‫ݠ‬
符合性声明
制造商名称：制造商地址：
声明本产品：产品名称：
DigiTech 8760 S. Sandy Parkway Sandy, Utah 84070, USA
DigiTech死亡金属(DDM)
产品型号：
本产品符合如下标准：安全： EMC：
补充信息：
所有（符合EN60065、EN60742 及相关标准的第二部分的电源适配器）
得退货认可的产品提供部件及人工一年免费保修（如果您已通过邮件或我们的网站正确注册本产品，本产品的保修期将延长至6年）。必须通过电话与DigiTech公司电话获取退货认可编号。本公司不承担在任何电路或组件中使用本产品造成附属损坏的任何责任。 4. 使用产品保修服务时，消费者有义务提供购买凭证。 5. DigiTech公司保留对本产品设计、增加或改进的权利，而不承担更新和改进从前已制造的产品的责任。 6. 如果本产品的主要组件被除Digitech公司授权的技术员之外的人员打开过或篡改过，如果本产品被接入制造商要求的电压范围之外的交流电源，消费者将丧失了本保证的权益。 7. 如上保证将代替所有其它明示或默示形式的保证，而且Digitech公司不承担也不授权任何人承担与销售本产品的相关的任何义务或责任。无论何种情况下，Digitech 公司或代理商不承担任何特别的或附属的损害，或者由于其不可控而造成的延迟履行保修的责任。注意：本手册中的信息可能随时更新，恕不另行通知。本手册中的一些信息可能由于本手册完成时制作者操作系统中无相关的文件形成。本手册此次修定取代所有老版本手册。

MTDF试算表

1/(λb
34.6
90 0.009315
1 *ΠT
1
1.5 0.43 ##### 5.5 1 #DIV/0!
*ΠA
*ΠR
*Πs
*Πq
*Π e)
=MTBF(hr)
1 1 1 5.0 1 2.147E+07
90 0.004779 1
1 1 1 5.0 1 4.185E+07
90 0.002921 1
1 1 1 5.0 1 6.846E+07
Environment Temperature
34.6
0.000124
Operating Contact Temperatu Temperature
10.0 37.99
1 ##### 2 #NUM!
1/(λb *Πk *Πp *Πe) =MTBF(hrs.)
0.005805415 3 2.58 2
1.113E+07
Inductive Coils Class A Inductive Coils Class B Inductive Coils Class C Inductive Coils Class O
On board Connector
Location
N1
N2
T1
15
10
LF1
15
10
Location
L1
Loop Number
Pag 4 of 6
2020/9/2
UPDATE DATE : 1999-MAY-31
Standard: MIL-HDBK-217F
=MTBF(hr)
2147.0 4185.4 6846.5 112.6 357.8 697.6 1141.1 18.8

SQT-103-01-F-D;SQT-106-01-LM-D;SQT-110-03-F-D;SQT-120-01-F-S;中文规格书,Datasheet资料

SPECIFICATIONS
For complete speciﬁcations see ?SQT
Mates with: TMMH, TMM, MTMM, MMT, TW, LTMM, ZLTMM, ESQT, TCMD
Choice of one through six rows
SQT-106-01-LM-D SQT-112-01-F-D SQT-110-01-L-Q
SQT-110-03-F-D SQT-107-01-L-T SQT-125-01-F-D
(2,29) .050 .090
(2,00) .0787
–RA OPTION
(–Q, –5 & –6 not available)

/
分销商库存信息:
SAMTEC SQT-103-01-F-D SQT-120-01-F-S SQT-110-01-LM-Q SQT-116-01-S-D
TMM/ SQT TMMH
HORIZONTAL
(2,00mm) .0787" pitch
1
NO. PINS PER ROW
LEAD STYLE
(6,35mm) .250"
PLATING OPTION
ROW OPTION
Note: Some lengths, styles and options are non-standard, non-returnable.
20°C
5.5A
(2,62mm) .103" to (5,03mm) .198" Insertion Force: (Single contact only)
40°C
5A
60°C

义隆中文资料 EM78P447S中文

EM78P447S
8位 OTP 微控制器
产品规Байду номын сангаас书
版本 1.7
义隆电子股份有限公司
2009.11
本文内容是由英文规格书翻译而来，目的是为了您的阅读更加方便。它无法跟随原稿的更新，文中可能存在翻译上的错误，请您参考英文规格书以获得更准确的信息。
商标告知:
IBM 为一个注册商标，PS/2 是 IBM 的商标之ㄧ.。
4.5 复位和唤醒 ..................................................................................................... 16
4.5.1 复位................................................................................................................... 16 4.5.2 状态寄存器的 RST, T, 和 P 的状态 ....................................................................... 20
Korea:
Elan Korea Electronics Company, Ltd.
301 Dong-A Building 632 Kojan-Dong, Namdong-ku Incheon City, KOREA Tel: +82 32 814-7730 Fax:+82 32 813-7730
深圳分公司:
香港分公司:
义隆电子（香港）有限公司九龙观塘巧明街 95 号世达中心 19 楼 A 室电话：+852 2723-3376 传真：+852 2723-7780

TongFang Solder Paste TF225S-M305NI-D-885 TDS

同方科技
TONGFANG TECH
產品技術規格書
Product Technical Data Sheet
文件編號 TDS Code 制訂日期 Issued Date 修訂日期 Revised Date 頁碼頁數 Page Number
TF225S-M305NI-D-885 2015/10/31 2017/07/19 頁 Page 3/8
88.50
IPC-TM-650 2.2.20
170±30 Pa.S
Initial: 75.6 gm; Tack retention @ 24 hr: 120.2 gm; Tack retention @ 72 hr: 96 gm
JIS-Z-3284 6 @ Malcom PCU-205:10 rpm 3 min 25±1 ℃ <60% RH
IPC J-STD-004 IPC-TM-650 2.3.28.1 IPC-TM-650 2.3.32 IPC-TM-650 2.6.15
4.3 電氣性能 Electrical properties
表面絕緣阻抗 SIR
電遷移 Electromigration
Pass, Test Conditions: IPC 7 days @ 85°C 85% RH | Ordinary state 1x1012(Ω) or above After humidifying 1x 109(Ω) or above After 100hrs. in humidity
由同方公司研發的TF225S系列焊錫膏為客戶提供優良的可焊接性與印刷型。 TF225S系列焊錫膏解決了無鉛焊料在應用中出現的各種問題，如：儲存於運輸穩定性，潤濕性差以及由高溫焊料導致的錫膏不耐熱性

NJD2873T4G;中文规格书,Datasheet资料

NJD2873T4G,NJVNJD2873T4GPower TransistorsNPN Silicon DPAK For Surface Mount ApplicationsDesigned for high−gain audio amplifier applications.Features•High DC Current Gain −h FE = 120 (Min) @ I C = 500 mA= 40 (Min) @ I C = 2 A•Low Collector−Emitter Saturation V oltage −V CE(sat) = 0.3 Vdc (Max) @ I C = 1 A•High Current−Gain − Bandwidth Product −f T = 65 MHz (Min) @ I C = 100 mA•Epoxy Meets UL 94 V−0 @ 0.125 in•ESD Ratings:♦Human Body Model, 3B > 8000 V♦Machine Model, C > 400 V•NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable•These are Pb−Free PackagesMAXIMUM RATINGSRating Symbol Value Unit Collector−Base Voltage V CB50Vdc Collector−Emitter Voltage V CEO50Vdc Emitter−Base Voltage V EB5VdcCollector Current Continuous Peak I C23AdcBase Current I B0.4AdcTotal Device Dissipation @ T C = 25°C Derate above 25°C P D150.1WW/°CTotal Device Dissipation @ T A = 25°C* Derate above 25°C P D1.680.011WW/°COperating and Storage JunctionTemperature RangeT J, T stg−65 to +175°CStresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.Device Package Shipping†ORDERING INFORMATIONSILICONPOWER TRANSISTORS2 AMPERES50 VOLTS15 WATTS†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.MARKING DIAGRAMA= Assembly LocationY= YearWW= Work WeekG= Pb−Free DeviceDPAKCASE 369CSTYLE 1AYWWJ2873GNJD2873T4G DPAK(Pb−Free)2,500Units / Reel NJVNJD2873T4G DPAK(Pb−Free)2,500Units / Reel11BASE3EMITTERCOLLECTOR2,424THERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal ResistanceJunction−to−CaseJunction−to−Ambient (Note 1)R q JCR q JA1089.3°C/W1.These ratings are applicable when surface mounted on the minimum pad sizes recommended.ELECTRICAL CHARACTERISTICS (T C = 25°C unless otherwise noted)Characteristic Symbol Min Max Unit OFF CHARACTERISTICSCollector−Emitter Sustaining Voltage (Note 2) (I C = 10 mAdc, I B = 0)V CEO(sus)50−VdcCollector Cutoff Current (V CB = 50 Vdc, I E = 0)I CBO−100nAdcEmitter Cutoff Current (V BE = 5 Vdc, I C = 0)I EBO−100nAdc ON CHARACTERISTICSDC Current Gain (Note 2)(I C = 0.5 A, V CE = 2 V)(I C = 2 Adc, V CE = 2 Vdc)(I C = 0.75 Adc, V CE = 1.6 Vdc, −40°C ≤ T J≤ 150°C)h FE1204080360−360−Collector−Emitter Saturation Voltage (Note 2) (I C = 1 A, I B = 0.05 A)V CE(sat)−0.3VdcBase−Emitter Saturation Voltage (Note 2) (I C = 1 A, I B = 0.05 Adc)V BE(sat)− 1.2VdcBase−Emitter On Voltage (Note 2)(I C = 1 Adc, V CE = 2 Vdc)(I C = 0.75 Adc, V CE = 1.6 Vdc, −40°C ≤ T J≤ 150°C)V BE(on)−−1.20.95VdcDYNAMIC CHARACTERISTICSCurrent−Gain − Bandwidth Product (Note 3)(I C = 100 mAdc, V CE = 10 Vdc, f test = 10 MHz)f T65−MHzOutput Capacitance(V CB = 10 Vdc, I E = 0, f = 0.1 MHz)C ob−80pF2.Pulse Test: Pulse Width = 300 m s, Duty Cycle [ 2%.3.f T = ⎪h fe⎪• f test.TYPICAL CHARACTERISTICS0.010.1110I C , COLLECTOR CURRENT (AMPS)V C E (s a t ), C O L L E C T O R −E M I T T E R S A T U R A T I O N V O L T A G E (V )I C , COLLECTOR CURRENT (AMPS)V B E (s a t ), B A S E −E M I T T E R S A T U R A T I O N V O L T A G E (V )10010000.010.1110I C , COLLECTOR CURRENT (AMPS)h F E , D C C U R R E N T G A I N102525Figure 1. Power DeratingT, TEMPERATURE (°C)50751001251501510520P D , P O W E R D I S S I P A T I O N (W A T T S )Figure 2. DC Current Gain Figure 3. Collector −Emitter Saturation VoltageFigure 4. Base −Emitter Saturation Voltage Figure 5. Base −Emitter VoltageI C , COLLECTOR CURRENT (AMPS)V B E (o n ), B A S E −E M I T T E R V O L T A G E (V )1.21.00.80.60.40.21.10.90.70.50.3175200Figure 6. Saturation RegionI B , BASE CURRENT (mA)V C E (s a t ), C O L L E C T O R −E M I T T E R S A T U R A T I O N V O L T A G E (V )1.00.010.11100.80.60.40.2010010000.11101001000100101Figure 7. CapacitanceV R , REVERSE VOLTAGE (V)C , C A P A C I T A N C E (p F )Figure 8. Saturation RegionI C , COLLECTOR CURRENT (mA)f t a u , C U R R E N T G A I N B A N D W I D T H P R O D U C T (M H z )1001101001000100100001101001000100101Figure 9. CapacitanceV CE , COLLECTOR EMITTER VOLTAGE (V)I C , C O L L E C T O R C U R R E N T10000t, TIME (ms)r (t ), T R A N S I E N T T H E R M A L R E S I S T A N C E (N O R M A L I Z E D )Figure 10. Thermal ResponsePACKAGE DIMENSIONSDPAK CASE 369C ISSUE DSTYLE 1:PIN 1.BASE2.COLLECTOR3.EMITTER4.COLLECTORǒmm ǓSCALE 3:1*For additional information on our Pb −Free strategy and solderingdetails, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*DIM MIN MAX MIN MAX MILLIMETERSINCHES D 0.2350.245 5.97 6.22E 0.2500.265 6.35 6.73A 0.0860.094 2.18 2.38b 0.0250.0350.630.89c20.0180.0240.460.61b20.0300.0450.76 1.14c 0.0180.0240.460.61e 0.090 BSC 2.29 BSC b30.1800.215 4.57 5.46L4−−−0.040−−− 1.01L 0.0550.070 1.40 1.78L30.0350.0500.89 1.27Z0.155−−−3.93−−−NOTES:1.DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.2.CONTROLLING DIMENSION: INCHES.3.THERMAL PAD CONTOUR OPTIONAL WITHIN DI-MENSIONS b3, L3 and Z.4.DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLDFLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE.5.DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY .6.DATUMS A AND B ARE DETERMINED AT DATUM PLANE H.H 0.3700.4109.4010.41A10.0000.0050.000.13L10.108 REF 2.74 REF L20.020 BSC 0.51 BSC DETAIL AROTATED 90 CW 5ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at /site/pdf/Patent −Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION分销商库存信息: ONSEMINJD2873T4G。

BF493SG;中文规格书,Datasheet资料

© Semiconductor Components Industries, LLC, 2007 March, 2007 − Rev. 41Publication Order Number:BF493S/DBF493SHigh Voltage Transistor PNP SiliconFeatures•This is a Pb−Free Device*MAXIMUM RATINGSRating Symbol Value Unit Collector−Emitter Voltage V CEO−350Vdc Collector−Base Voltage V CBO−350Vdc Emitter−Base Voltage V EBO−6.0Vdc Collector Current − Continuous I C−500mAdc Total Device Dissipation @ T A = 25°CDerate above = 25°C PD6255.0mWmW/°CTotal Device Dissipation @ T C = 25°C Derate above 25°C PD 1.512WmW/°COperating and Storage JunctionTemperature RangeT J, T stg−55 to +150°C THERMAL CHARACTERISTICSCharacteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient R q JA200°C/W Thermal Resistance, Junction−to−Case R q JC83.3°C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.Device Package ShippingORDERING INFORMATIONBF493SG TO−92(Pb−Free)5000 Units / BulkSTRAIGHT LEADBULK PACKTO−92CASE 29STYLE 1MARKING DIAGRAMBF493SAYWW GGA= Assembly LocationY= YearWW= Work WeekG= Pb−Free Package(Note: Microdot may be in either location)ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)CharacteristicSymbolMinMaxUnitOFF CHARACTERISTICSCollector−Emitter Breakdown Voltage (Note 1)(I C = −1.0 mAdc, I B = 0)V (BR)CEO −350−Vdc Collector−Base Breakdown Voltage(I C = −100 m Adc, I E = 0)V (BR)CBO −350−Vdc Emitter−Base Breakdown Voltage(I E = −100 m Adc, I C = 0)V (BR)EBO −6.0−Vdc Collector Cutoff Current(V CE = −250 Vdc)I CES −−10nAdc Emitter Cutoff Current(V EB = −6.0 Vdc, I C = 0)I EBO −0.1m Adc Collector Cutoff Current(V CB = −250 Vdc, I E = 0, T A = 25°C)(V CB = −250 Vdc, I E = 0, T A = 100°C)I CBO−−−0.005−1.0m AdcON CHARACTERISTICSDC Current Gain(I C = −1.0 mAdc, V CE = −10 Vdc)(I C = −10 mAdc, V CE = −10 Vdc)h FE2540−−−Collector−Emitter Saturation Voltage(I C = −20 mAdc, I B = −2.0 mAdc)V CE(sat)−−2.0Vdc Base −Emitter On Voltage(I C = −20 mA, I B = −2.0 mA)V BE(sat)−−2.0VdcDYNAMIC CHARACTERISTICSCurrent−Gain − Bandwidth Product(I C = −10 mAdc, V CE = −20 Vdc, f = 20 MHz)f T 50−MHz Common−Emitter Feedback Capacitance(V CB = −100 Vdc, I E = 0, f = 1.0 MHz)C re−1.6pF1.Pulse Test: Pulse Width v 300 m s; Duty Cycle v2.0%.Figure 1. DC Current GainI C , COLLECTOR CURRENT (mA)15015h F E , D C C U R R E N T G A I N20305070100C , C A P A C I T A N C E (p F )Figure 2. Capacitances V R , REVERSE VOLTAGE (VOLTS)10050201.0102.05.0Figure 3. Current−Gain — Bandwidth ProductI C , COLLECTOR CURRENT (mA)200f , CU R R E N T −G A I N Ċ B A N D W I D T H P R O D U C T (M H z )T I C , COLLECTOR CURRENT (mA)Figure 4. “On” Voltages V , V O L T A G E (V O L T S )V CE , COLLECTOR−EMITTER VOLTAGE (VOLTS)I C , C O L L E C T O R C U R R E N T (m A )Figure 5. Active Region — Safe Operating Area−500−5.0−10−20−50−100−200PACKAGE DIMENSIONSTO−92 (TO−226)CASE 29−11ISSUE AMNOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.4.LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.PLANEDIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.1750.205 4.45 5.20B 0.1700.210 4.32 5.33C 0.1250.165 3.18 4.19D 0.0160.0210.4070.533G 0.0450.055 1.15 1.39H 0.0950.105 2.42 2.66J 0.0150.0200.390.50K 0.500−−−12.70−−−L 0.250−−− 6.35−−−N 0.0800.105 2.04 2.66P −−−0.100−−− 2.54R 0.115−−− 2.93−−−V0.135−−−3.43−−−NOTES:1.DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.2.CONTROLLING DIMENSION: MILLIMETERS.3.CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.4.LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.DIM MIN MAX MILLIMETERS A 4.45 5.20B 4.32 5.33C 3.18 4.19D 0.400.54G 2.40 2.80J 0.390.50K 12.70−−−N 2.04 2.66P 1.50 4.00R 2.93−−−V3.43−−−STYLE 1:PIN 1.EMITTER2.BASE3.COLLECTORON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION分销商库存信息: ONSEMIBF493SG。

MMBT3904-TP;中文规格书,Datasheet资料

/
5 of 6
2011/04/13
MCC
Micro Commercial Components
TM
Ordering Information :
Device
Part Number-TP
Packing
Tape&Reel;3Kpcs/Reel
***IMPORTANT NOTICE***
MCC
Noise Figure vs Micro Commercial Components IC = 100µ A
TM
f = 1.0kHz 1.0 10 RS - (kΩ) Current Gain 100
50
100 TA - (°C)
150
200
Contours of Constant Gain Bandwidth Product (fT) 12 10 8 VCE - (V) 6 4 2 0 0.1 hfe 100 1000
MCC
TM
Micro Commercial Components

omponents 20736 Marilla Street Chatsworth !"# $
% !"#
MMBT3904
Thermal Resistance Junction to Ambient: 385 oC/W Thermal Resistance Junction to Case: 185 oC/W
C
C B
OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICEX Vdc Vdc Vdc nAdc nAdc

Revision: C

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-10 -1
-10
-100
-1000
I [mA], COLLECTOR CURRENT
C
Figure 2. Saturation Voltage
1000
V = -20V CE
f = 100MHz
100
10 -1
-10
-100
I [mA], COLLECTOR CURRENT
C
Figure 4. Current Gain Bandwidth Product
BVCEO
* Collector-Emitter Breakdown Voltage : KST92 : KST93
IC= -1mA, IB=0
BVEBO ICBO
IEBO hFE
Emitter-Base Breakdown Voltage
Collector Cut-off Current : KST92 : KST93
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
2D
Min. Max. Units
-300
V
-200
V
-300
V
-200
V
-5
V
-0.25 μA -0.25 μA
-0.1
μA
25 40 25
-0.5
V
-0.9
V
6
pF
8
pF
50
MHz
KST93 2E
© 2009 Fairchild Semiconductor Corporation
KST92/KST93 Rev. C1
3 2
SOT-23
1
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol VCBO
VCEO
VEBO IC
TJ, TSTG
Parameter
Collector Base Voltage
1000 100
V = -10V CE
10
-10000 -1000 -100
V (sat) BE
V (sat) CE
I = 10 I
C
B
h , DC CURRENT GAIN FE
CE
BE
C [pF], C [pF], CAPACITANCE
1
-1
-10
-100
-1000
I [mA], COLLECTOR CURRENT
™*
®
Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore¥ FETBench¥ FlashWriter®*
FPS¥ F-PFS¥ FRFET® Global Power ResourceSM Green FPS¥ Green FPS¥ e-Series¥ Gmax™ GTO¥ IntelliMAX¥ ISOPLANAR¥ MegaBuck™ MICROCOUPLER¥ MicroFET¥ MicroPak¥ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR®
C
Figure 1. DC current Gain
100
C ib
10
C ob
1
-0.1
-1
-10
-100
V [V], COLLECTOR-BASE VOLTAGE CB
Figure 3. Capacitance
FBSOA
1000
f [MHz],
T
CURRENT GAIN BANDWIDTH PRODUCT
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.
Emitter Cut-off Current
* DC Current Gain
VCE (sat) VBE (sat)
Cob
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Output Capacitance
Parameter
PD
Power Dissipation (TA=25°C)
RθJA*
Thermal Resistance, Junction to Ambient
* note) minimum land pattern size.
Value
-300 -200
-300 -200
-5 -500 150
VCB= -20V, IE=0 f=1MHz
fT
Current Gain Bandwidth Product
* Pulse Test: PW≤300μs, Duty Cycle≤2%
VCE= -20V, IC= -10mA f=100MHz
Marking Code
Type Mark
KST92 2D
Marking
2
/

KST92/KST93 — PNP Epitaxial Silicon Transistor
V (sat), V (sat)[mV], SATURATION VOLTAGE
Typical Performance Characteristics
Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
Collector-Base Breakdown Voltage : KST92 : KST93
IC= -100μA, IE=0
®
PDP SPM™ Power-SPM¥
PowerTrench® PowerXS™ Programmable Active Droop¥ QFET® QS¥ Quiet Series¥ RapidConfigure¥
™ Saving our world, 1mW/W/kW at a time™ SmartMax™ SMART START¥ SPM® STEALTH™ SuperFET¥ SuperSOT¥-3 SuperSOT¥-6 SuperSOT¥-8 SupreMOS™ SyncFET™ Sync-Lock™
Units
V V
V V V mA °C
Value 250 500
Units mW °C/W
© 2009 Fairchild Semiconductor Corporation
KST92/KST93 Rev. C1
1
/

KST92/KST93 — PNP Epitaxial Silicon Transistor
ob
ib
I [mA], Collector Current
C
100 DC
10
1
0.1 0.1
KST92 KST93
1
10
100
V [V], Collector-Emitter Voltage CE
Figure 5. Active-Regio Safe Operating Area
© 2009 Fairchild Semiconductor Corporation
KST92/KST93 Rev. C1
3

/
KST92/KST93 — PNP Epitaxial Silicon Transistor
Physical Dimension
0.40 ±0.03
SOT-23
0.20 MIN
0.45~0.60
2.40 ±0.10
1.30 ±0.10
0.40 ±0.03 2.90 ±0.10
0.96~1.14
0.03~0.10 0.38 REF
0.12
+0.05 –0.023
0.97REF
0.95 ±0.03 0.95 ±0.03 1.90 ±0.03
0.508REF
© 2009 Fairchild Semiconductor Corporation
KST92/KST93 Rev. C1
4
/
Dimensions in Millimeters

TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not