HAF2012资料
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元器件交易网
HAF2012(L), HAF2012(S)
Silicon N Channel MOS FET Series Power Switching
REJ03G1139-0400 Rev.4.00
Jul 13, 2007
Description
This FET has the over temperature shut-down capability sensing to the junction temperature.
Typical Output Characteristics
50 10 V
8V
40
6V
Pulse Test 5V
30 4V
20
3.5 V
10
VGS = 3 V
0
0
2
4
6
8
10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
Typical Transfer Characteristics
50 VDS = 10 V Pulse Test
40
30
Tc = –25°C
25°C
75°C 20
10
0
0
1
2
3
4
5
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance vs. Drain Current
100
20 µs
50
20 10
5
2 1
Operation in is limited by
RtDhDCiSsO(aporene)rPaaWtion=(1T10cmm=1s0s205µ°Cs )
0.5 Ta = 25°C 0.3
0.3 0.5 1 2
5 10 20 50 100
Drain to Source Voltage VDS (V)
G
Gate Resistor
Temperature Sensing Circuit
Latch Circuit
ቤተ መጻሕፍቲ ባይዱ
Gate Shutdown Circuit
S
REJ03G1139-0400 Rev.4.00 Jul 13, 2007 Page 1 of 9
元器件交易网
HAF2012(L), HAF2012(S)
元器件交易网
HAF2012(L), HAF2012(S)
Electrical Characteristics
Drain current
Item
Drain to source breakdown voltage Gate to source breakdown voltage
Outline
RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) )
4
1 2 3
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) )
4
123 D
1. Gate 2. Drain 3. Source 4. Drain
Unit A mA V V V µA µA µA µA mA mA µA V mΩ mΩ S pF
µs µs µs µs V ns
ms ms
(Ta = 25°C)
Test Conditions VGS = 3.5 V, VDS = 2 V VGS = 1.2 V, VDS = 2 V ID = 10 mA, VGS = 0 IG = 100 µA, VDS = 0 IG = –100 µA, VDS = 0 VGS = 8 V, VDS = 0 VGS = 3.5 V, VDS = 0 VGS = 1.2 V, VDS = 0 VGS = –2.4 V, VDS = 0 VGS = 8 V, VDS = 0 VGS = 3.5 V, VDS = 0 VDS = 50 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 10 A, VGS = 4 V Note 3 ID = 10 A, VGS = 10 V Note 3 ID = 10 A, VDS = 10 V Note 3 VDS = 10 V, VGS = 0 f = 1 MHz ID = 5 A VGS = 5 V RL = 6 Ω
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage
Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
Gate to source leak current
Input current (shut down)
Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance
Min 10 — 60 16 –2.8 — — — — — — — 1.0 — — 6 —
Typ Max
—
—
—
10
—
—
—
—
—
—
— 100
—
50
—
1
— –100
0.8
—
0.35 —
— 250
— 2.25
50
65
30
43
12
—
630 —
Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time
td (on) tr
td (off) tf
VDF trr
—
7.5
—
—
29
—
—
34
—
—
26
—
—
1.0
—
— 110 —
Over load shut down operation time Note4
tos1
—
1.8
—
tos2
—
0.7
—
Notes: 3. Pulse test
4. Including the junction temperature rise of the over loaded condition.
Case Temperature Tc (°C)
Reverse Recovery Time trr (ns)
1000 500
Body-Drain Diode Reverse Recovery Time
200 100
50
20
10 0.5 1 2
This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
—
—
1
µA Vi = 1.2 V, VDS = 0
—
0.8
—
mA Vi = 8 V, VDS = 0
—
0.35
—
mA Vi = 3.5 V, VDS = 0
—
175
—
°C Channel temperature
3.5
—
13
V
REJ03G1139-0400 Rev.4.00 Jul 13, 2007 Page 2 of 9
Features
• Logic level operation (4 to 6 V Gate drive) • High endurance capability against to the short circuit • Built-in the over temperature shut-down circuit • Latch type shut-down operation (Need 0 voltage recovery)
Typical Operation Characteristics
Item Input voltage
Input current (Gate non shut down)
Input current (Gate shut down) Shut down temperature Gate operation voltage
Static Drain to Source on State Resistance vs. Temperature
0.10 Pulse Test
0.08 0.06
ID = 20 A
VGS = 4 V
10 A 5A
0.04
ID = 20 A
5 A, 10 A
0.02
10 V
0 –40 0
40 80 120 160
0.5 Pulse Test
0.2
0.1 0.05
VGS = 4 V
10 V 0.02
0.01 1
2 5 10 20 50 100 200 Drain Current ID (A)
元器件交易网
HAF2012(L), HAF2012(S)
Static Drain to Source on State Resistance RDS (on) (Ω)
HAF2012(L), HAF2012(S)
Main Characteristics
Power vs. Temperature Derating 80
Channel Dissipation Pch (W)
60
40
20
0
0
50
100
150
200
Case Temperature Tc (°C)
Drain Current ID (A)
IF = 20 A, VGS = 0 IF = 20 A, VGS = 0 diF/dt = 50 A/µs VGS = 5 V, VDD = 12 V VGS = 5 V, VDD = 24 V
REJ03G1139-0400 Rev.4.00 Jul 13, 2007 Page 3 of 9
元器件交易网
Drain to Source on State Resistance RDS (on) (Ω)
Drain Current ID (A)
Drain Current ID (A)
Maximum Safe Operation Area
500 Thermal shut down
200 Operation area
2. Value at Ta = 25°C
Symbol VDSS VGSS VGSS ID
ID (pulse) Note 1 IDR
Pch Note 2 Tch Tstg
Value 60 16 –2.8 20 40 20 50 150
–55 to +150
(Ta = 25°C)
Unit V V V A A A W °C °C
Symbol VIH VIL IIH1 IIH2 IIL
IIH (sd) 1 IIH (sd) 2
Tsd VOP
(Ta = 25°C)
Min
Typ
Max
Unit
Test Conditions
3.5
—
—
V
—
—
1.2
V
—
—
100
µA Vi = 8 V, VDS = 0
—
—
50
µA Vi = 3.5 V, VDS = 0
Forward transfer admittance Output capacitance
Symbol ID1 ID2
V (BR) DSS V (BR) GSS V (BR) GSS
IGSS1 IGSS2 IGSS3 IGSS4 IGS (op) 1 IGS (op) 2 IDSS VGS (off) RDS (on) RDS (on) |yfs| Coss
2.0 Pulse Test
1.6
1.2
0.8
ID = 20 A
0.4
10 A
5A
0
0
2
4
6
8
10
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (on) (V)
REJ03G1139-0400 Rev.4.00 Jul 13, 2007 Page 4 of 9
HAF2012(L), HAF2012(S)
Silicon N Channel MOS FET Series Power Switching
REJ03G1139-0400 Rev.4.00
Jul 13, 2007
Description
This FET has the over temperature shut-down capability sensing to the junction temperature.
Typical Output Characteristics
50 10 V
8V
40
6V
Pulse Test 5V
30 4V
20
3.5 V
10
VGS = 3 V
0
0
2
4
6
8
10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
Typical Transfer Characteristics
50 VDS = 10 V Pulse Test
40
30
Tc = –25°C
25°C
75°C 20
10
0
0
1
2
3
4
5
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance vs. Drain Current
100
20 µs
50
20 10
5
2 1
Operation in is limited by
RtDhDCiSsO(aporene)rPaaWtion=(1T10cmm=1s0s205µ°Cs )
0.5 Ta = 25°C 0.3
0.3 0.5 1 2
5 10 20 50 100
Drain to Source Voltage VDS (V)
G
Gate Resistor
Temperature Sensing Circuit
Latch Circuit
ቤተ መጻሕፍቲ ባይዱ
Gate Shutdown Circuit
S
REJ03G1139-0400 Rev.4.00 Jul 13, 2007 Page 1 of 9
元器件交易网
HAF2012(L), HAF2012(S)
元器件交易网
HAF2012(L), HAF2012(S)
Electrical Characteristics
Drain current
Item
Drain to source breakdown voltage Gate to source breakdown voltage
Outline
RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) )
4
1 2 3
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) )
4
123 D
1. Gate 2. Drain 3. Source 4. Drain
Unit A mA V V V µA µA µA µA mA mA µA V mΩ mΩ S pF
µs µs µs µs V ns
ms ms
(Ta = 25°C)
Test Conditions VGS = 3.5 V, VDS = 2 V VGS = 1.2 V, VDS = 2 V ID = 10 mA, VGS = 0 IG = 100 µA, VDS = 0 IG = –100 µA, VDS = 0 VGS = 8 V, VDS = 0 VGS = 3.5 V, VDS = 0 VGS = 1.2 V, VDS = 0 VGS = –2.4 V, VDS = 0 VGS = 8 V, VDS = 0 VGS = 3.5 V, VDS = 0 VDS = 50 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 10 A, VGS = 4 V Note 3 ID = 10 A, VGS = 10 V Note 3 ID = 10 A, VDS = 10 V Note 3 VDS = 10 V, VGS = 0 f = 1 MHz ID = 5 A VGS = 5 V RL = 6 Ω
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage
Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
Gate to source leak current
Input current (shut down)
Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance
Min 10 — 60 16 –2.8 — — — — — — — 1.0 — — 6 —
Typ Max
—
—
—
10
—
—
—
—
—
—
— 100
—
50
—
1
— –100
0.8
—
0.35 —
— 250
— 2.25
50
65
30
43
12
—
630 —
Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time
td (on) tr
td (off) tf
VDF trr
—
7.5
—
—
29
—
—
34
—
—
26
—
—
1.0
—
— 110 —
Over load shut down operation time Note4
tos1
—
1.8
—
tos2
—
0.7
—
Notes: 3. Pulse test
4. Including the junction temperature rise of the over loaded condition.
Case Temperature Tc (°C)
Reverse Recovery Time trr (ns)
1000 500
Body-Drain Diode Reverse Recovery Time
200 100
50
20
10 0.5 1 2
This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
—
—
1
µA Vi = 1.2 V, VDS = 0
—
0.8
—
mA Vi = 8 V, VDS = 0
—
0.35
—
mA Vi = 3.5 V, VDS = 0
—
175
—
°C Channel temperature
3.5
—
13
V
REJ03G1139-0400 Rev.4.00 Jul 13, 2007 Page 2 of 9
Features
• Logic level operation (4 to 6 V Gate drive) • High endurance capability against to the short circuit • Built-in the over temperature shut-down circuit • Latch type shut-down operation (Need 0 voltage recovery)
Typical Operation Characteristics
Item Input voltage
Input current (Gate non shut down)
Input current (Gate shut down) Shut down temperature Gate operation voltage
Static Drain to Source on State Resistance vs. Temperature
0.10 Pulse Test
0.08 0.06
ID = 20 A
VGS = 4 V
10 A 5A
0.04
ID = 20 A
5 A, 10 A
0.02
10 V
0 –40 0
40 80 120 160
0.5 Pulse Test
0.2
0.1 0.05
VGS = 4 V
10 V 0.02
0.01 1
2 5 10 20 50 100 200 Drain Current ID (A)
元器件交易网
HAF2012(L), HAF2012(S)
Static Drain to Source on State Resistance RDS (on) (Ω)
HAF2012(L), HAF2012(S)
Main Characteristics
Power vs. Temperature Derating 80
Channel Dissipation Pch (W)
60
40
20
0
0
50
100
150
200
Case Temperature Tc (°C)
Drain Current ID (A)
IF = 20 A, VGS = 0 IF = 20 A, VGS = 0 diF/dt = 50 A/µs VGS = 5 V, VDD = 12 V VGS = 5 V, VDD = 24 V
REJ03G1139-0400 Rev.4.00 Jul 13, 2007 Page 3 of 9
元器件交易网
Drain to Source on State Resistance RDS (on) (Ω)
Drain Current ID (A)
Drain Current ID (A)
Maximum Safe Operation Area
500 Thermal shut down
200 Operation area
2. Value at Ta = 25°C
Symbol VDSS VGSS VGSS ID
ID (pulse) Note 1 IDR
Pch Note 2 Tch Tstg
Value 60 16 –2.8 20 40 20 50 150
–55 to +150
(Ta = 25°C)
Unit V V V A A A W °C °C
Symbol VIH VIL IIH1 IIH2 IIL
IIH (sd) 1 IIH (sd) 2
Tsd VOP
(Ta = 25°C)
Min
Typ
Max
Unit
Test Conditions
3.5
—
—
V
—
—
1.2
V
—
—
100
µA Vi = 8 V, VDS = 0
—
—
50
µA Vi = 3.5 V, VDS = 0
Forward transfer admittance Output capacitance
Symbol ID1 ID2
V (BR) DSS V (BR) GSS V (BR) GSS
IGSS1 IGSS2 IGSS3 IGSS4 IGS (op) 1 IGS (op) 2 IDSS VGS (off) RDS (on) RDS (on) |yfs| Coss
2.0 Pulse Test
1.6
1.2
0.8
ID = 20 A
0.4
10 A
5A
0
0
2
4
6
8
10
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (on) (V)
REJ03G1139-0400 Rev.4.00 Jul 13, 2007 Page 4 of 9