PHOTODIODE
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专利名称：PHOTODIODE
发明人：JIYON ENU DORISUKOORU 申请号：JP24524385
申请日：19851031
公开号：JPS61136277A
公开日：
19860624
专利内容由知识产权出版社提供
摘要：A non-evacuated photodiode for detecting far-uv radiation. The photocathode is a cylindrical element surrounded by an annular anode. The photocathode is constructed of a metal (e.g., nickel) that emits electrons only in response to far-uv radiation of 140 nanometer or shorter wavelengths. A window (e.g., magnesium fluoride) is positioned at the entrance to the photodiode, to filter out far-uv radiation with wavelengths shorter than about 100 nanometers. The window and photocathode material serve to make the photodiode sensitive to radiation in a wavelength range to greater than 100 to 140 nanometers. A high- temperature perfluoroethylene material is used as an insulating layer for spacing the window from the anode and for spacing the anode from the photocathode. The photodiode is used in a gas chromatography detector.
申请人：H N U SYST INC
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