bat 14-03w资料
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Silicon Schottky Diode
• Low noise figure
• Low barrier type
21
EHA07007 ESD: E lectro s tatic d ischarge sensitive device, observe handling precaution!
Pin Configuration
Type Marking Package BAT 14-03W 1 = C
O/white SOD-323
2 = A
Maximum Ratings
Parameter Symbol Value Unit Diode reverse voltage V R4V Forward current I F90mA Total power dissipation, T S≤ 85 °C P tot100mW Junction temperature T j150°C Operating temperature range T op-55 ... 125°C Storage temperature T stg-55 ... 150°C Thermal Resistance
Junction - ambient 1)R thJA≤450K/W Junction - soldering point R thJS≤690
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
Electrical Characteristics at T A = 25 °C, unless otherwise specified.
Parameter Symbol Values Unit
min.typ.max.
DC characteristics (per diode)
Breakdown voltage
I(BR) = 5 µA
V(BR)4--V
Forward voltage I F = 1 mA
I F = 10 mA V F
0.36
0.48
0.43
0.55
0.52
0.66
AC characteristics (per diode)
Diode capacitance
V R = 0 V, f = 1 MHz
C T-0.220.35pF
Forward resistance
IF = 10mA / 50mA
R F- 5.5-Ω
Forward current I F = f (V F ) T A = parameter
10 10 10 10 10 mA
I F
Reverse current I R
= f (V R ) T A = Parameter
I R
Diode capacitance C T = f
(V R ) f = 1MHz
C T