mos管4812

Symbol
Typ Max 4862.574110R θJL
3540Maximum Junction-to-Lead C
Steady-State
°C/W
Parameter
Units Maximum Junction-to-Ambient A t ≤ 10s R θJA °C/W Maximum Junction-to-Ambient A Steady-State °C/W Thermal Characteristics AO4812
Symbol
Min Typ
Max
Units BV DSS 30
V 0.004
1T J =55°C
5I GSS 100nA V GS(th)1 1.9
3
V I D(ON)
20
A 22.528T J =125°C
31.33834.542
m Ωg FS 10
15.4S V SD 0.76
1V I S
3
A C iss 680
820pF C oss 102pF C rss 77pF R g
3 3.6ΩQ g (10V)13.84
17nC Q g (4.5V) 6.748.1nC Q gs 1.82nC Q gd 3.2nC t D(on) 4.6
7ns t r 4.1 6.2ns t D(off)20.630ns t f 5.27.5ns t rr 16.520ns Q rr
7.8
10nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge Turn-Off Fall Time
SWITCHING PARAMETERS Total Gate Charge Total Gate Charge Gate Source Charge Turn-On DelayTime V GS =10V, V DS =15V, R L =2.2Ω, R GEN =3Ω
V GS =10V, V DS =15V, I D =6.9A
Gate Drain Charge Reverse Transfer Capacitance Turn-On Rise Time Turn-Off DelayTime Gate resistance
V GS =0V, V DS =0V, f=1MHz
Forward Transconductance
V DS =5V, I D =6.9A
Diode Forward Voltage I S =1A Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Input Capacitance V GS =0V, V DS =15V, f=1MHz Output Capacitance R DS(ON)Static Drain-Source On-Resistance
V GS =10V, I D =6.9A
m ΩV GS =4.5V, I D =5.0A
Gate Threshold Voltage V DS =V GS I D =250µA On state drain current
V GS =4.5V, V DS =5V V DS =24V, V GS =0V
µA Gate-Body leakage current V DS =0V, V GS =±20V I F =6.9A, dI/dt=100A/µs
I F =6.9A, dI/dt=100A/µs
Electrical Characteristics (T J =25°C unless otherwise noted)Parameter
Conditions STATIC PARAMETERS Drain-Source Breakdown Voltage I D =250µA, V GS =0V I DSS Zero Gate Voltage Drain Current A: The value of R θJA is measured with the device mounted on 1in 2
FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2
FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The SOA curve provides a single pulse rating. Rev 4 : Sept 2005
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS。