74HC04D-T中文资料
74HC04D
6.0
Min
1.50 3.15 4.20 1.9 4.4 5.9 4.18 5.68
Typ.
2.0 4.5 6.0 4.31 5.80 0.0 0.0 0.0 0.17 0.18
11.2. DC Characteristics (Unless otherwise specified, Ta = -40 to 85 )
Characteristics High-level input voltage Low-level input voltage High-level output voltage
Low-level output voltage
Input leakage current Quiescent supply current
CMOS Digital Integrated Circuits Silicon Monolithic
74HC04D
74HC04D
1. Functional Description
• Hex Inverter
2. General
The 74HC04D is a high speed CMOS INVERTER fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stages, including buffered output, which provide high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge or transient excess voltage.
74HC04数据手册
Hex inverter
FEATURES • Complies with JEDEC standard no. 8-1A • ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V. • Specified from −40 to +85 °C and −40 to +125 °C. QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf ≤ 6.0 ns. DESCRIPTION
2003 Jul 23
5
Philips Semiconductors
Product specification
Hex inverter
DC CHARACTERISTICS Type 74HC04 At recommended operating conditions; voltages are referenced to GND (ground = 0 V). TEST CONDITIONS SYMBOL Tamb = 25 °C VIH HIGH-level input voltage 2.0 4.5 6.0 VIL LOW-level input voltage 2.0 4.5 6.0 VOH HIGH-level output voltage VI = VIH or VIL IO = −20 µA IO = −20 µA IO = −4.0 mA IO = −20 µA IO = −5.2 mA VOL LOW-level output voltage VI = VIH or VIL IO = 20 µA IO = 20 µA IO = 4.0 mA IO = 20 µA IO = 5.2 mA ILI IOZ ICC input leakage current VI = VCC or GND 3-state output OFF current VI = VIH or VIL; VO = VCC or GND quiescent supply current 2.0 4.5 4.5 6.0 6.0 6.0 6.0 − − − − − − − − 2.0 4.5 4.5 6.0 6.0 1.9 4.4 3.98 5.9 5.48 1.5 3.15 4.2 − − − PARAMETER OTHER VCC (V) MIN.
74HC04中文资料_数据手册_参数
Pb-Free 14-Lead Small Outline Integrated Circuit (SOIC), JEDEC MS-012, 0.150" Narrow
MM74HC04SJ
M14D Pb-Free 14-Lead Small Outline Package (SOP), EIAJ TYPE II, 5.3mm Wide
Units
ns ns ns ns ns ns pF
pF
3
MM74HC04
Physical Dimensions inches (millimeters) unless otherwise noted
14-Lead Small Outline Integrated Circuit (SOIC), JEDEC MS-012, 0.150" Narrow Package Number M14A
Output Voltage
|IOUT| ≤ 20 µA
2.0V
2.0
1.9
1.9
4.5V
4.5
4.4
4.4
1.9
V
4.4
V
6.0V
6.0
5.9
5.9
5.9
V
VIN = VIL
|IOUT| ≤ 4.0 mA
|IOUT| ≤ 5.2 mA
VOL
Maximum LOW Level VIN = VIH
Output Voltage
Input Voltage
2.0V 4.5V
1.5
1.5
3.15
3.ห้องสมุดไป่ตู้5
1.5
V
3.15
V
6.0V
74HC74中文资料_数据手册_参数
74HC74宽工作电压范围2 V 6 VD输出可以开车10 LSTTL LoadsD低功耗,40-µA马克斯ICCD典型信息= 15 nsD±4-mA输出驱动VD低输入电 流的5点1µA Maxdescription /订购informationThe HC74设备包含两个independentD-type positive-edge-triggered拖鞋。74HC74在预置(PRE)或 清除(CLR)输入设置或重置输出的低电平,而不考虑其他输入的电平。当PRE和CLR处于非活动状态(高)时,满足setuptime要求的数据 (D)输入处的数据被传输到时钟(CLK)脉冲正向边缘的输出端。时钟触发发生在电压水平,与CLK的上升时间没有直接关系。在保持时间 间隔之后,可以在不影响输出电平的情况下更改输入端的数据。订购包图纸,标准包装数量,74HC74热数据,符号,和PCB设计指南超 过“绝对最大额定值”下列出的应力可能对设备造成永久性损坏。这些只是应力等级,设备在这些或任何其他条件下的功能运行,超 出“推荐操作条件”的指示,是不受限制的。长时间暴露在绝对最大额定条件下可能会影响设备的可靠性。如果观察输入和输出电流额 定值,可能会超过输入和输出电压额定值。封装热阻抗按JESD 5计算环保(RoHS &没有某人/ Br): TI定义“绿色”意味着“Pb-Free”,此 外,使用包装材料,不含卤素,包括溴(Br)或锑(某人)总数的0.1%以上产品的重量。(3)实验室,峰值温度。湿度敏感性级别评级根据 JEDECindustry标准分类和soldertemperature峰值。重要信息和免责声明:本页所提供的信息代表德州仪器自提供之日起的知识和信念。TI 的知识和信念基于第三方提供的信息,对于这些信息的准确性不作任何陈述或保证。74HC74目前正在努力更好地整合来自第三方的信 息。TI已采取并将继续采取合理措施,提供具有代表性和准确的信息,但可能未对来料和化学品进行破坏性测试或化学分析。TI和TI供 应商认为某些信息是专有的,因此CAS号码和其他有限的信息可能无法发布。在任何情况下,TI因该等信息而产生的责任都不应超过 TIto客户在本文件中每年销售的TI部件的采购总价
74HC04和74HC14的区别(施密特触发的作用)[大全五篇]
74HC04和74HC14的区别(施密特触发的作用)[大全五篇]第一篇:74HC04和74HC14的区别(施密特触发的作用)74HC04和74HC14的具体区别详解同样具有反相器功能,你知道74HC04和74HC14的具体区别吗?对于74HC04很好理解,输入低电平,输出高电平;输入高电平,输出低电平。
可是具体到几伏电压算高电平,几伏算低电平呢?答案是看手册。
下图是TI的74HC04的输入特性表,举个例子来看,当芯片供电电压Vcc=4.5V时,输入端最少输入3.15V电压才可以被74HC04识别为高电平;同理,输入端只有输入不大于1.35V的电压,才可以被识别为低电平。
下图是74HC04的输出特性表,在TEST CONDITIONS(测试条件)分别选IOH=-4mA和IOL=4mA,再举例子看,同上面的一样,当芯片供电电压Vcc=4.5V时,且输入端被识别为低电平,输出端VOH就是高电平,且最小值为3.84V;同理,当芯片供电电压Vcc=4.5V时,且输入端被识别为高电平,输出端VOL就是低电平,且最大值为0.33V。
从以上的分析可以看出,经74HC04的反相,到底输出几伏的高电平或低电平主要和该芯片的供电电压关系密切!以上对于74HC04的分析同样适用于74HC14!关于以上的数据,他们在手册中完全一样!也就是单纯作为反相器使用时,可以通用。
但是74HC14除了反相器这个基本功能外,他还是个施密特触发器。
关于什么是施密特触发器,现用一个图简单介绍:对于74HC14来说,当输入VI大于阀值电压VT+时,输出VO由高电平变低电平;当输入VI小于阀值电压VT-时,输出VO由低电平变高电平;通过上面分析,我们了解了施密特触发器是以反相器为基础的,以及阀值电压的基本概念。
下面来看一下74HC14这个施密特触发器的手册数据:VOH和VOL上文已经介绍过了,下面看一下VT+和VT-:当芯片供电电压Vcc=4.5V时,正向阀值的典型值VT+=2.5V,负向阀值的典型值VT-=1.6V。
LED电子显示屏的维修资料_百度文库(精)
74HC04的作用:6位反相器。
第7脚GND ,电源地。
第14脚VCC ,电源正极。
信号由A 端输入Y 端反相输出,A1与Y1为一组,其它类推。
例:A1=“1”则Y1=“0”、A1=“0”则Y1=“1”,其它组功能一样。
74HC138的作用:八位二进制译十进制译码器。
第8脚GND ,电源地。
第15脚VCC ,电源正极第1~3脚A 、B 、C ,二进制输入脚。
第4~6脚片选信号控制,只有在4、5脚为“0”6脚为“1”时,才会被选通,输出受A 、B 、C 信号控制。
其它任何组合方式将不被选通,且Y0~Y7输出全为“1”。
通过控制选通脚来级联,使之扩展到十六位。
例:G2A=0,G2B=0,G1=1,A=1,B=0,C=0,则Y0为“0”Y1~Y7为“1”。
74HC595的作用:LED 驱动芯片,8位移位锁存器。
第8脚GND ,电源地。
第16脚VCC ,电源正极第14脚DATA ,串行数据输入口,显示数据由此进入,必须有时钟信号的配合才能移入。
第13脚EN ,使能口,当该引脚上为“1”时QA~QH口全部为“1”,为“0”时QA~QH的输出由输入的数据控制。
第12脚STB ,锁存口,当输入的数据在传入寄存器后,只有供给一个锁存信号才能将移入的数据送QA~QH口输出。
第11脚CLK ,时钟口,每一个时钟信号将移入一位数据到寄存器。
第10脚SCLR ,复位口,只要有复位信号,寄存器内移入的数据将清空,显示屏不用该脚,一般接VCC 。
第9脚DOUT ,串行数据输出端,将数据传到下一个。
第15、1~7脚,并行输出口也就是驱动输出口,驱动LED 。
4953的作用:行驱动管,功率管。
其内部是两个CMOS 管,1、3脚VCC ,2、4脚控制脚,2脚控制7、8脚的输出,4脚控制5、6脚的输出,只有当2、4脚为“0”时,7、8、5、6才会输出,否则输出为高阻状态。
TB62726的作用:LED 驱动芯片,16位移位锁存器。
SN74HCU04DT中文资料
PACKAGING INFORMATIONOrderable DeviceStatus (1)Package Type Package Drawing Pins Package Qty Eco Plan (2)Lead/Ball FinishMSL Peak Temp (3)86010012A ACTIVE LCCC FK 201TBD Call TI N /A for Pkg Type 8601001CA ACTIVE CDIP J 141TBD Call TI N /A for Pkg Type SN54HCU04J ACTIVE CDIP J 141TBDCall TI N /A for Pkg Type SN74HCU04D ACTIVE SOIC D 1450Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN74HCU04DBR ACTIVE SSOP DB 142000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN74HCU04DBRE4ACTIVE SSOP DB 142000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN74HCU04DE4ACTIVE SOIC D 1450Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN74HCU04DR ACTIVE SOIC D 142500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN74HCU04DRE4ACTIVE SOIC D 142500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN74HCU04DT ACTIVE SOIC D 14250Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN74HCU04DTE4ACTIVE SOIC D 14250Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN74HCU04N ACTIVE PDIP N 1425Pb-Free (RoHS)CU NIPDAU N /A for Pkg Type SN74HCU04N3OBSOLETE PDIP N 14TBD Call TI Call TISN74HCU04NE4ACTIVE PDIP N 1425Pb-Free (RoHS)CU NIPDAU N /A for Pkg Type SN74HCU04NSR ACTIVE SO NS 142000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN74HCU04NSRE4ACTIVE SO NS 142000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN74HCU04PW ACTIVE TSSOP PW 1490Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN74HCU04PWE4ACTIVE TSSOP PW 1490Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN74HCU04PWR ACTIVE TSSOP PW 142000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN74HCU04PWRE4ACTIVE TSSOP PW 142000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN74HCU04PWT ACTIVE TSSOP PW 14250Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN74HCU04PWTE4ACTIVE TSSOP PW 14250Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SNJ54HCU04FK ACTIVE LCCC FK 201TBD Call TI N /A for Pkg Type SNJ54HCU04JACTIVECDIPJ141TBDCall TIN /A for Pkg Type(1)The marketing status values are defined as follows:ACTIVE:Product device recommended for new designs.LIFEBUY:TI has announced that the device will be discontinued,and a lifetime-buy period is in effect.NRND:Not recommended for new designs.Device is in production to support existing customers,but TI does not recommend using this part in a new design.PREVIEW:Device has been announced but is not in production.Samples may or may not be available.OBSOLETE:TI has discontinued the production of the device.12-Jan-2006(2)Eco Plan -The planned eco-friendly classification:Pb-Free (RoHS),Pb-Free (RoHS Exempt),or Green (RoHS &no Sb/Br)-please check /productcontent for the latest availability information and additional product content details.TBD:The Pb-Free/Green conversion plan has not been defined.Pb-Free (RoHS):TI's terms "Lead-Free"or "Pb-Free"mean semiconductor products that are compatible with the current RoHS requirements for all 6substances,including the requirement that lead not exceed 0.1%by weight in homogeneous materials.Where designed to be soldered at high temperatures,TI Pb-Free products are suitable for use in specified lead-free processes.Pb-Free (RoHS Exempt):This component has a RoHS exemption for either 1)lead-based flip-chip solder bumps used between the die and package,or 2)lead-based die adhesive used between the die and leadframe.The component is otherwise considered Pb-Free (RoHS compatible)as defined above.Green (RoHS &no Sb/Br):TI defines "Green"to mean Pb-Free (RoHS compatible),and free of Bromine (Br)and Antimony (Sb)based flame retardants (Br or Sb do not exceed 0.1%by weight in homogeneous material)(3)MSL,Peak Temp.--The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications,and peak solder temperature.Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided.TI bases its knowledge and belief on information provided by third parties,and makes no representation or warranty as to the accuracy of such information.Efforts are underway to better integrate information from third parties.TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.TI and TI suppliers consider certain information to be proprietary,and thus CAS numbers and other limited information may not be available for release.In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s)at issue in this document sold by TI to Customer on an annualbasis.12-Jan-2006IMPORTANT NOTICETexas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. 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高性能硅门CMOS74HC04芯片说明书
Hex InverterHigh −Performance Silicon −Gate CMOSThe 74HC04 is identical in pinout to the LS04 and the MC14069.The device inputs are compatible with Standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs.The device consists of six three −stage inverters.Features•Output Drive Capability: 10 LSTTL Loads•Outputs Directly Interface to CMOS, NMOS and TTL •Operating V oltage Range: 2.0 to 6.0 V •Low Input Current: 1.0 m A•High Noise Immunity Characteristic of CMOS Devices•In Compliance With the JEDEC Standard No. 7A Requirements •ESD Performance: HBM > 2000 V; Machine Model > 200 V •Chip Complexity: 36 FETs or 9 Equivalent Gates •These are Pb −Free DevicesLOGIC DIAGRAMY1A1A2A3A4A5A6Y2Y3Y4Y5Y6Y = APinout: 14−Lead Packages (Top View)1314121110982134567V CC A6Y6A5Y5A4Y4A1Y1A2Y2A3Y3GNDTSSOP −14SOIC −14114114L HFUNCTION TABLEInputsOutputsA H LYMAXIMUM RATINGSSymbol Parameter Value Unit V CC DC Supply Voltage (Referenced to GND)– 0.5 to + 7.0V V in DC Input Voltage (Referenced to GND)– 0.5 to V CC + 0.5V V out DC Output Voltage (Referenced to GND)– 0.5 to V CC + 0.5VI in DC Input Current, per Pin±20mAI out DC Output Current, per Pin±25mAI CC DC Supply Current, V CC and GND Pins±50mAP D Power Dissipation in Still Air,SOIC Package†TSSOP Package†500450mWT stg Storage Temperature– 65 to + 150_C T L Lead Temperature, 1 mm from Case for 10 SecondsSOIC or TSSOP Package260_CStresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.*This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high−impedance circuit. For proper operation, V in and V out should be constrained to the range GND v (V in or V out) v V CC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or V CC). Unused outputs must be left open.†Derating−SOIC Package: – 7 mW/_C from 65_ to 125_CTSSOP Package: − 6.1 mW/_C from 65_ to 125_CFor high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).RECOMMENDED OPERATING CONDITIONSSymbol Parameter Min Max Unit V CC DC Supply Voltage (Referenced to GND) 2.0 6.0VV in, V out DC Input Voltage, Output Voltage (Referenced to GND)0V CC V T A Operating Temperature, All Package Types– 55+ 125_Ct r, t f Input Rise and Fall Time V CC = 2.0 V (Figure 1)V CC = 4.5 VV CC = 6.0 V 01000500400nsDC CHARACTERISTICS(Voltages Referenced to GND)V CC (V)Guaranteed LimitSymbol Parameter Condition−55 to 25°C≤85°C≤125°C UnitV IH Minimum High−Level InputVoltage V out = 0.1V or V CC−0.1V|I out| ≤ 20m A2.03.04.56.01.502.103.154.201.502.103.154.201.502.103.154.20VV IL Maximum Low−Level InputVoltage V out = 0.1V or V CC− 0.1V|I out| ≤ 20m A2.03.04.56.00.500.901.351.800.500.901.351.800.500.901.351.80VV OH Minimum High−Level OutputVoltage V in = V IH or V IL|I out| ≤ 20m A2.04.56.01.94.45.91.94.45.91.94.45.9V V in =V IH or V IL|I out| ≤ 2.4mA|I out| ≤ 4.0mA |I out| ≤ 5.2mA 3.04.56.02.483.985.482.343.845.342.203.705.20V OL Maximum Low−Level OutputVoltage V in = V IH or V IL|I out| ≤ 20m A2.04.56.00.10.10.10.10.10.10.10.10.1VV in = V IH or V IL|I out| ≤ 2.4mA|I out| ≤ 4.0mA|I out| ≤ 5.2mA3.04.56.00.260.260.260.330.330.330.400.400.40I in Maximum Input LeakageCurrentV in = V CC or GND 6.0±0.1±1.0±1.0m AI CC Maximum Quiescent SupplyCurrent (per Package)V in = V CC or GNDI out = 0m A6.0 2.02040m ANOTE:Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D). AC CHARACTERISTICS(C L = 50pF, Input t r = t f = 6ns)V CC (V)Guaranteed LimitSymbol Parameter−55 to 25°C≤85°C≤125°C Unitt PLH, t PHL Maximum Propagation Delay, Input A or B to Output Y(Figures 1 and 2)2.03.04.56.07530151395401916110552219nst TLH, t THL Maximum Output Transition Time, Any Output(Figures 1 and 2)2.03.04.56.07527151395321916110362219nsC in Maximum Input Capacitance101010pF NOTE:For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).C PD Power Dissipation Capacitance (Per Inverter)*Typical @ 25°C, V CC = 5.0 VpF20*Used to determine the no−load dynamic power consumption: P D = C PD V CC2f + I CC V CC. For load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).Figure 1. Switching WaveformsGNDV CCOUTPUT YINPUT AC L **Includes all probe and jig capacitanceTESTFigure 2. Test CircuitYA Figure 3. Expanded Logic Diagram(1/6 of the Device Shown)。
74HC04D中文资料_数据手册_参数
Output nY H L
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
3 of 15
Nexperia
74HC04; 74HCT04
Hex inverter
8. Recommended operating conditions
Table 5. Recommended operating conditions Voltages are referenced to GND (ground = 0 V)
-
50
65
[2]
-
50 mA - mA +150 C 500 mW
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] For SO14 package: Ptot derates linearly with 8 mW/K above 70 C. For (T)SSOP14 packages: Ptot derates linearly with 5.5 mW/K above 60 C. For DHVQFN14 packages: Ptot derates linearly with 4.5 mW/K above 60 C.
-
3.15
-V
VCC = 6.0 V
74HC4024D-T中文资料
A HIGH on MR clears all counter stages and forces all outputs LOW, independent of the state of CP.
Pin description Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14
CP 1 MR 2 Q6 3 Q5 4 Q4 5 Q3 6 GND 7
14 VCC 13 n.c.
12 Q0
4024
11 Q1
10 n.c.
9 Q2
8 n.c. 001aab905
Description clock input (HIGH-to-LOW, edge-triggered) master reset input (active HIGH) parallel output 6 parallel output 5 parallel output 4 parallel output 3 ground (0 V) not connected parallel output 2 not connected parallel output 1 parallel output 0 not connected positive supply voltage
6. Functional diagram
74HC4024
7-stage binary ripple counter
Q6 3
Q5 4
7-STAGE Q4 5 COUNTER
Q3 6
Q2 9
Q1 11
Q0 12
CP MR
74HCT04DR2G,74HCT04DR2G,74HCT04DR2G,74HCT04DTR2G,74HCT04DTR2G,74HCT04DTR2G, 规格书,Datasheet 资料
74HCT04Hex InverterWith LSTTL−Compatible InputsHigh−Performance Silicon−Gate CMOSThe 74HCT04 may be used as a level converter for interfacing TTL or NMOS outputs to High−Speed CMOS inputs. The HCT04A is identical in pinout to the LS04.Features•Output Drive Capability: 10 LSTTL Loads•TTL/NMOS−Compatible Input Levels•Outputs Directly Interface to CMOS, NMOS and TTL •Operating V oltage Range: 4.5 to 5.5 V•Low Input Current: 1.0 m A•In Compliance With the JEDEC Standard No. 7A Requirements •ESD Performance: HBM > 2000 V; Machine Model > 200 V •Chip Complexity: 48 FETs or 12 Equivalent Gates•These are Pb−Free DevicesMARKINGDIAGRAMSHCT04= Device CodeA= Assembly LocationL, WL= Wafer LotY= YearW, WW= Work WeekG or G= Pb−Free PackageTSSOP−14DT SUFFIXCASE 948GSOIC−14D SUFFIXCASE 751AHCT04ALYW GG114See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.ORDERING INFORMATION(Note: Microdot may be in either location)LOGIC DIAGRAMY1A1A2A3A4A5A6Y2Y3Y4Y5Y6Y = APin 14 = V CC Pin 7 = GNDPinout: 14−Lead Packages (Top View)1314121110982134567V CC A6Y6A5Y5A4Y4A1Y1A2Y2A3Y3GNDL HFUNCTION TABLEInputs OutputsA H LY ORDERING INFORMATIONDevicePackage Shipping †74HCT04DR2G SOIC −14(Pb −Free)2500 / Tape & Reel74HCT04DTR2GTSSOP −14*†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.*This package is inherently Pb −Free.MAXIMUM RATINGSSymbol ParameterValue Unit V CC DC Supply Voltage (Referenced to GND)– 0.5 to + 7.0V V in DC Input Voltage (Referenced to GND)– 0.5 to V CC + 0.5V V out DC Output Voltage (Referenced to GND)– 0.5 to V CC + 0.5V I in DC Input Current, per Pin ±20mA I out DC Output Current, per Pin±25mA I CC DC Supply Current, V CC and GND Pins ±50mA P D Power Dissipation in Still Air SOIC Package†TSSOP Package†500450mW T stg Storage Temperature Range– 65 to + 150_C T LLead Temperature, 1 mm from Case for 10 SecondsSOIC or TSSOP Package260_CStresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.†Derating —SOIC Package: – 7 mW/_C from 65_ to 125_CTSSOP Package: − 6.1 mW/_C from 65_ to 125_CFor high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High −Speed CMOS Data Book (DL129/D).RECOMMENDED OPERATING CONDITIONSSymbol ParameterMin Max Unit V CC DC Supply Voltage (Referenced to GND)4.55.5V V in , V outDC Input Voltage, Output Voltage (Referenced to GND)0V CC V T A Operating Temperature Range, All Package Types – 55+ 125_C t r , t fInput Rise/Fall Time (Figure 1)500nsDC CHARACTERISTICS (Voltages Referenced to GND)V CC (V)Guaranteed LimitSymbol ParameterCondition−55 to 25°C≤85°C ≤125°C Unit V IH Minimum High −Level Input Voltage V out = 0.1V |I out | ≤ 20m A 4.55.5 2.02.0 2.02.0 2.02.0V V IL Maximum Low −Level Input Voltage V out = V CC − 0.1V |I out | ≤ 20m A 4.55.50.80.80.80.80.80.8V V OHMinimum High −Level Output VoltageV in = V IL |I out | ≤ 20m A 4.55.5 4.45.4 4.45.4 4.45.4VV in = V IL|I out | ≤ 4.0mA4.5 3.98 3.84 3.70V OLMaximum Low −Level Output VoltageV in = V IH |I out | ≤ 20m A 4.55.50.10.10.10.10.10.1V V in = V IH|I out | ≤ 4.0mA 4.50.260.330.40I in Maximum Input Leakage Current V in = V CC or GND 5.5±0.1±1.0±1.0m A I CCMaximum Quiescent Supply Current (per Package)V in = V CC or GND I out = 0m A5.52.02040m A D I CCAdditional Quiescent Supply CurrentV in = 2.4V, Any One InputV in = V CC or GND, Other Inputs I out = 0m A5.5≥ −55°C25 to 125°CmA2.92.4rmation on typical parametric values can be found in Chapter 2 of the ON Semiconductor High −Speed CMOS Data Book (DL129/D).2.Total Supply Current = I CC + ΣD I CC .This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high −impedance cir-cuit. For proper operation, V in and V out should be constrained to the range GND v (V in or V out ) v V CC .Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or V CC ).Unused outputs must be left open.AC CHARACTERISTICS (V CC = 5.0V ±10%, C L = 50pF, Input t r = t f = 6ns)Guaranteed LimitSymbol Parameter−55 to 25°C≤85°C ≤125°C Unit t PLH ,t PHL Maximum Propagation Delay, Input A to Output Y (Figures 1 and 2)151719212226ns t TLH ,t THL Maximum Output Transition Time, Any Output (Figures 1 and 2)151922ns C inMaximum Input Capacitance101010pF3.For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON Semiconductor High −Speed CMOS Data Book (DL129/D).C PDPower Dissipation Capacitance (Per Inverter)*Typical @ 25°C, V CC = 5.0 VpF22*Used to determine the no −load dynamic power consumption: P D = C PD V CC 2f + I CC V CC . For load considerations, see Chapter 2 of the ON Semiconductor High −Speed CMOS Data Book (DL129/D).Figure 1. Switching Waveforms GND3.0VOUTPUT YINPUT AC L **Includes all probe and jig capacitanceTEST Figure 2. Test CircuitYA Figure 3. Expanded Logic Diagram(1/6 of the Device Shown)SOIC −14CASE 751A −03ISSUE HNOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: MILLIMETER.3.DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION.4.MAXIMUM MOLD PROTRUSION 0.15 (0.006)PER SIDE.5.DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127(0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION.DIM MIN MAX MIN MAX INCHESMILLIMETERS A 8.558.750.3370.344B 3.80 4.000.1500.157C 1.35 1.750.0540.068D 0.350.490.0140.019F 0.40 1.250.0160.049G 1.27 BSC 0.050 BSC J 0.190.250.0080.009K 0.100.250.0040.009M 0 7 0 7 P 5.80 6.200.2280.244R0.250.500.0100.019____DIMENSIONS: MILLIMETERS*For additional information on our Pb −Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.TSSOP −14CASE 948G −01ISSUE BDIM MIN MAX MIN MAX INCHESMILLIMETERS A 4.90 5.100.1930.200B 4.30 4.500.1690.177C −−− 1.20−−−0.047D 0.050.150.0020.006F 0.500.750.0200.030G 0.65 BSC 0.026 BSC H 0.500.600.0200.024J 0.090.200.0040.008J10.090.160.0040.006K 0.190.300.0070.012K10.190.250.0070.010L 6.40 BSC 0.252 BSC M0 8 0 8 NOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: MILLIMETER.3.DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE.4.DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION.INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE.5.DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08(0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION.6.TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY .7.DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE −W −.____14X REF K14X0.360.65PITCHSOLDERING FOOTPRINT**For additional information on our Pb −Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION。
HCT04中文资料
Value -0.5 to +7.0 -1.5 to VCC +1.5 -0.5 to VCC +0.5 ±20 ±25 ±50 750 500 -65 to +150 260
Unit V V V mA mA mA mW °C °C
Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the Recommended Operating Conditions. +Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C SOIC Package: : - 7 mW/°C from 65° to 125°C
RECOMMENDED OPERATING CONDITIONS
Symbol VCC VIN, VOUT TA tr, t f Parameter DC Supply Voltage (Referenced to GND) DC Input Voltage, Output Voltage (Referenced to GND) Operating Temperature, All Package Types Input Rise and Fall Time (Figure 1) Min 4.5 0 -55 0 Max 5.5 VCC +125 500 Unit V V °C ns
SLS
System Logic Semiconductor
元器件交易网
SL74HCT04
MAXIMUM RATINGS *
CD74HCT04中文资料
SYMBOL
TEST CONDITIONS
25oC
-40oC TO +85oC
VI (V) IO (mA) VCC (V) MIN TYP MAX MIN
MAX
-55oC TO 125oC MIN MAX UNITS
VIH
-
-
2
1.5 -
-
1.5
-
1.5
-
V
4.5 3.15 -
-
3.15
-
3.15
-
V
6
4.2 -
-
4.2
-
4.2
-
V
VIL
-
-
2
-
- 0.5
-
0.5
-
0.5
V
4.5
-
- 1.35
-
1.35
-
1.35
V
6
-
- 1.8
-
1.8
-
1.8
V
VOH
VIH or -0.02
2
1.9 -
7 GND
8 4Y
Logic Symbol
TRUTH TABLE
INPUTS
nA
nY
L
H
H
L
NOTE: H = High Voltage Level, L = Low Voltage Level
nA
nY
2
元器件交易网 CD54HC04, CD54HCT04, CD74HC04, CD74HCT04
2V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000ns (Max)
AiP74HC04中文资料
VCC=2.0V IO=-20uA
VCC=4.5V IO =-20uA
Vi=VIH 或 VIL
VCC=4.5V IO=-4.0mA
VCC=6.0V IO=-20uA
VCC=6.0V IO=-5.2mA
VCC=2.0V IO=20uA
VCC=4.5V IO=20uA
Vi=VIH 或 VIL
VCC=4.5V IO=4.0mA
江苏省无锡市蠡园经济开发区滴翠路 100 号 9 栋 2 层
http://www.i-core. cn
邮编:214072
第6页共9页 版本:2012-02-A1
表 733-11-I
5、封装尺寸与外形图 5. 1、DIP14 图与封装尺寸
无锡中微爱芯电子有限公司
Wuxi I-CORE Electronics Co., Ltd.
编号:AiP74HC04-AX-BJ-160
6、声明及注意事项:
6.1、产品中有毒有害物质或元素的名称及含量
有毒有害物质或元素
部件名称
铅(Pb)
汞(Hg) 镉(Cd)
六阶铬 多溴联苯 多溴联苯 (C(r Ⅵ)) (PBBs) 醚(PBDEs)
引线框
○
○
○
○
○
○
i-core 塑封树脂 芯片 内引线 装片胶
VCC=6.0V IO=20uA
VCC=6.0V IO=5.2mA
VCC=6.0V Vi= VCC 或 GND
VCC=6.0V Vi=VIH 或 VIL Vo= VCC 或 GND
VCC=6.0V Vi =VCC 或 GND IO=0
最小
1.5 3.15 4.2 - - - 1.9
74hc04工作原理
74hc04工作原理英文回答:The 74HC04 is a hex inverter gate, meaning that it has six independent inverters in a single package. Eachinverter takes a digital input signal and outputs the inverted (opposite) value. A logic inverter is a fundamental building block in digital logic circuits and performs the basic NOT operation.The 74HC04 is a TTL (Transistor-Transistor Logic) device, which means that it uses bipolar transistors to implement the logic functions. It is a member of the 74HC series, which is a high-speed CMOS (Complementary Metal-Oxide Semiconductor) family. CMOS devices are known for their low power consumption, high speed, and wide operating voltage range.The 74HC04 is a popular choice for inverting signals in a variety of applications, including:Logic level conversion.Signal conditioning.Buffering.Oscillator circuits.Switching circuits.The device is available in a variety of package options, including DIP (Dual In-Line Package), SOIC (Small Outline Integrated Circuit), and TSSOP (Thin Shrink Small Outline Package).中文回答:74HC04的工作原理。
CD74HC04中文资料
• Wide Operating Temperature Range . . . -55oC to 125oC
• Balanced Propagation Delay and Transition Times
• Significant Power Reduction Compared to LSTTL Logic ICs
6ns
at
VCC
=
5V,
• Fanout (Over Temperature Range)
- Standard Outputs . . . . . . . . . . . . . . . 10 LSTTL Loads
- Bus Driver Outputs . . . . . . . . . . . . . 15 LSTTL Loads
(SOIC - Lead Tips Only)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
N/A
CERDIP Package . . . . . . . . . . . . . . . . 130
55
SOIC Package . . . . . . . . . . . . . . . . . . . 180
74HC04_PDF
Tamb = -40 to +125℃; note 2
-
500
mW
Notes
1. For DIP14 packages: above 70℃ derate linearly with 12 mW/K.
2. For SO14 packages: above 70℃ derate linearly with 8 mW/K.
QUICK REFERENCE DATA
GND = 0V; Tamb = 25℃; tf = tf≤6.0ns
SYMBOL
PARAMETER
CONDITIONS
TPLH/tPLH
Propagation delay nA to nY
CL = 15pF; VCC = 5V
CI
Input capacitance
-0.5
+7.0
V
IIK
Input diode current
VI<-0.5V<or VI<Vcc+0.5V
-
±20
mA
IOK
Output diode currer
VO<-0.5V<or VO<Vcc+0.5V
-
±20
mA
IO
Output source of sink current
-0.5V<VO<Vcc+0.5V
See note 1. INPUT nA L H
Note 1. H = HIGH voltage level;
L = LOW voltage level.
OUTPUT nY H L
第 1 页 共 18 页
深圳市富满电子有限公司
SN74HCT14DT中文资料
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Following are URLs where you can obtain information on other Texas Instruments products and application solutions:Products ApplicationsAmplifiers Audio /audioData Converters Automotive /automotiveDSP Broadband /broadbandInterface Digital Control /digitalcontrolLogic Military /militaryPower Mgmt Optical Networking /opticalnetworkMicrocontrollers Security /securityLow Power /lpw Telephony /telephonyWirelessVideo&Imaging /videoWireless /wirelessMailing Address:Texas Instruments,Post Office Box655303,Dallas,Texas75265Copyright©2007,Texas Instruments IncorporatedPACKAGING INFORMATIONOrderable Device Status (1)Package Type Package Drawing Pins Package Qty Eco Plan (2)Lead/Ball FinishMSL Peak Temp (3)5962-86890012A ACTIVE LCCC FK 201TBD POST-PLATE N /A for Pkg Type 5962-8689001CA ACTIVE CDIP J 141TBD A42SNPB N /A for Pkg Type 5962-8689001DA ACTIVE CFP W 141TBD A42N /A for Pkg Type SN74HCT14D ACTIVE SOIC D 1450Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN74HCT14DBLE OBSOLETE SSOP DB 14TBDCall TI Call TISN74HCT14DBR ACTIVE SSOP DB 142000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN74HCT14DBRE4ACTIVE SSOP DB 142000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN74HCT14DE4ACTIVE SOIC D 1450Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN74HCT14DG4ACTIVE SOIC D 1450Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN74HCT14DGVR ACTIVE TVSOP DGV 142000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN74HCT14DGVRE4ACTIVE TVSOP DGV 142000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN74HCT14DR ACTIVE SOIC D 142500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN74HCT14DRE4ACTIVE SOIC D 142500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN74HCT14DRG4ACTIVE SOIC D 142500Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN74HCT14DT ACTIVE SOIC D 14250Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN74HCT14DTE4ACTIVE SOIC D 14250Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN74HCT14DTG4ACTIVE SOIC D 14250Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN74HCT14N ACTIVE PDIP N 1425Pb-Free (RoHS)CU NIPDAU N /A for Pkg Type SN74HCT14NE4ACTIVE PDIP N 1425Pb-Free (RoHS)CU NIPDAU N /A for Pkg Type SN74HCT14PWLE OBSOLETE TSSOP PW 14TBDCall TI Call TISN74HCT14PWR ACTIVE TSSOP PW 142000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN74HCT14PWRE4ACTIVE TSSOP PW 142000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN74HCT14PWRG4ACTIVE TSSOP PW 142000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN74HCT14PWT ACTIVE TSSOP PW 14250Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN74HCT14PWTE4ACTIVE TSSOP PW 14250Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM SN74HCT14PWTG4ACTIVE TSSOP PW 14250Green (RoHS &no Sb/Br)CU NIPDAULevel-1-260C-UNLIMSNJ54HCT14FKACTIVELCCCFK201TBDPOST-PLATE N /A for Pkg Type23-Apr-2007Orderable Device Status (1)Package Type Package DrawingPins Package Qty Eco Plan (2)Lead/Ball Finish MSL Peak Temp (3)SNJ54HCT14J ACTIVE CDIP J 141TBD A42SNPB N /A for Pkg Type SNJ54HCT14WACTIVECFPW141TBDA42N /A for Pkg Type(1)The marketing status values are defined as follows:ACTIVE:Product device recommended for new designs.LIFEBUY:TI has announced that the device will be discontinued,and a lifetime-buy period is in effect.NRND:Not recommended for new designs.Device is in production to support existing customers,but TI does not recommend using this part in a new design.PREVIEW:Device has been announced but is not in production.Samples may or may not be available.OBSOLETE:TI has discontinued the production of the device.(2)Eco Plan -The planned eco-friendly classification:Pb-Free (RoHS),Pb-Free (RoHS Exempt),or Green (RoHS &no Sb/Br)-please check /productcontent for the latest availability information and additional product content details.TBD:The Pb-Free/Green conversion plan has not been defined.Pb-Free (RoHS):TI's terms "Lead-Free"or "Pb-Free"mean semiconductor products that are compatible with the current RoHS requirements for all 6substances,including the requirement that lead not exceed 0.1%by weight in homogeneous materials.Where designed to be soldered at high temperatures,TI Pb-Free products are suitable for use in specified lead-free processes.Pb-Free (RoHS Exempt):This component has a RoHS exemption for either 1)lead-based flip-chip solder bumps used between the die and package,or 2)lead-based die adhesive used between the die and leadframe.The component is otherwise considered Pb-Free (RoHS compatible)as defined above.Green (RoHS &no Sb/Br):TI defines "Green"to mean Pb-Free (RoHS compatible),and free of Bromine (Br)and Antimony (Sb)based flame retardants (Br or Sb do not exceed 0.1%by weight in homogeneous material)(3)MSL,Peak Temp.--The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications,and peak solder temperature.Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided.TI bases its knowledge and belief on information provided by third parties,and makes no representation or warranty as to the accuracy of such information.Efforts are underway to better integrate information from third parties.TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducteddestructive testing or chemical analysis on incoming materials and chemicals.TI and TI suppliers consider certain information to be proprietary,and thus CAS numbers and other limited information may not be available for release.In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s)at issue in this document sold by TI to Customer on an annual basis.23-Apr-2007TAPE AND REELINFORMATION19-May-2007DevicePackage Pins SiteReel Diameter (mm)Reel Width (mm)A0(mm)B0(mm)K0(mm)P1(mm)W (mm)Pin1Quadrant SN74HCT14DBR DB 14MLA 330168.2 6.6 2.51216Q1SN74HCT14DGVR DGV 14MLA 33012 6.8 4.0 1.6816Q1SN74HCT14DR D 14MLA 33016 6.59.0 2.1816Q1SN74HCT14DR D 14FMX 3300 6.59.0 2.1816Q1SN74HCT14PWRPW14MLA330127.05.61.6812Q1TAPE AND REEL BOX INFORMATIONDevice Package Pins Site Length (mm)Width (mm)Height (mm)SN74HCT14DBR DB 14MLA 342.9336.628.58SN74HCT14DGVR DGV 14MLA 338.1340.520.64SN74HCT14DR D 14MLA 342.9336.628.58SN74HCT14DR D 14FMX 342.9336.628.58SN74HCT14PWRPW14MLA338.1340.520.6419-May-2007PACKAGE MATERIALS INFORMATION19-May-2007Pack Materials-Page3IMPORTANT NOTICETexas Instruments Incorporated and its subsidiaries(TI)reserve the right to make corrections,modifications,enhancements, improvements,and other changes to its products and services at any time and to discontinue any product or service without notice. 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2 3 4 5 6 7 Top view GND 8 4Y
GND(1)
11 10 9
9
4A
4Y
8
11
5A
5Y
10
13
MBL760
6A
6Y
12
MNA342
(1) The die substrate is attached to this pad using conductive die attach material. It can not be used as a supply pin or input.
2003 Jul 23
4
元器件交易网
Philips Semiconductors
Product specification
Hex inverter
RECOMMENDED OPERATING CONDITIONS 74HC04 SYMBOL VCC VI VO Tamb PARAMETER supply voltage input voltage output voltage ambient temperature CONDITIONS MIN. 2.0 0 0 see DC and AC −40 characteristics per device VCC = 2.0 V VCC = 4.5 V VCC = 6.0 V − − − TYP. 5.0 − − +25 MAX. 6.0 VCC VCC +125
Product specification
Hex inverter
74HC04; 74HCT04
handbook, halfpage
1A 1
VCC 14 13 12 6A 3 2A 2Y 4 6Y 5A 5Y 4A 5 3A 3Y 6
handbook, halfpage
1
1A
1Y
2
1Y 2A 2Y 3A 3Y
2003 Jul 23
5
元器件交易网
Philips Semiconductors
Product specification
Hex inverter
DC CHARACTERISTICS Type 74HC04 At recommended operating conditions; voltages are referenced to GND (ground = 0 V). TEST CONDITIONS SYMBOL Tamb = 25 °C VIH HIGH-level input voltage 2.0 4.5 6.0 VIL LOW-level input voltage 2.0 4.5 6.0 VOH HIGH-level output voltage VI = VIH or VIL IO = −20 µA IO = −20 µA IO = −4.0 mA IO = −20 µA IO = −5.2 mA VOL LOW-level output voltage VI = VIH or VIL IO = 20 µA IO = 20 µA IO = 4.0 mA IO = 20 µA IO = 5.2 mA ILI IOZ ICC input leakage current VI = VCC or GND 3-state output OFF current VI = VIH or VIL; VO = VCC or GND quiescent supply current 2.0 4.5 4.5 6.0 6.0 6.0 6.0 − − − − − − − − 2.0 4.5 4.5 6.0 6.0 1.9 4.4 3.98 5.9 5.48 1.5 3.15 4.2 − − − PARAMETER OTHER VCC (V) MIN.
PINNING PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 SYMBOL 1A 1Y 2A 2Y 3A 3Y GND 4Y 4A 5Y 5A 6Y 6A VCC DESCRIPTION data input data output data input data output data input data output ground (0 V) data output data input data output data input data output data input supply voltage Fig.1 Pin configuration DIP14, SO14 and (T)SSOP14.
74HC04; 74HCT04
74HCT04 UNIT MIN. 4.5 0 0 −40 TYP. 5.0 − − +25 MAX. 5.5 VCC VCC +125 V V V °C
tr, tf
input rise and fall times
− 6.0 −
1000 500 400
− − −
− 6.0 −
TYPICAL SYMBOL tPHL/tPLH CI CPD Notes 1. CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts; N = total load switching outputs; Σ(CL × VCC2 × fo) = sum of the outputs. 2. For 74HC04: the condition is VI = GND to VCC. For 74HCT04: the condition is VI = GND to VCC − 1.5 V. FUNCTION TABLE See note 1. INPUT nA L H Note 1. H = HIGH voltage level; L = LOW voltage level. OUTPUT nY H L PARAMETER propagation delay nA to nY input capacitance power dissipation capacitance per gate notes 1 and 2 CONDITIONS HC04 CL = 15 pF; VCC = 5 V 7 3.5 21 8 3.5 24 HCT04 ns pF pF UNIT
74HC04; 74HCT04
MATERIAL plastic plastic plastic plastic plastic plastic plastic plastic plastic plastic
CODE SOT27-1 SOT27-1 SOT108-1 SOT108-1 SOT337-1 SOT337-1 SOT402-1 SOT402-1 SOT762-1 SOT762-1
74HC04; 74HCT04
The 74HC/HCT04 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A. The 74HC/HCT04 provide six inverting buffers.
元器件交易网
INTEGRATED CIRCUITS
DATA SHEET
74HC04; 74HCT04 Hex inverter
Product specification Supersedes data of 1993 Sep 01 2003 Jul 23
元器件交易网
Fig.2 Pin configuration DHVQFN14.
Fig.3 Logic symbol.
handbook, halfpage
1
1
2
3
1andbook, halfpage
A
Y
MNA341
9
1
8
11
1
10
13
1
MNA343
12
Fig.4 IEC logic symbol.
Fig.5 Logic diagram (one inverter).
2003 Jul 23
2
元器件交易网
Philips Semiconductors
Product specification
Hex inverter
ORDERING INFORMATION PACKAGE TYPE NUMBER TEMPERATURE RANGE 74HC04N 74HCT04N 74HC04D 74HCT04D 74HC04DB 74HCT04DB 74HC04PW 74HCT04PW 74HC04BQ 74HCT04BQ −40 to +125 °C −40 to +125 °C −40 to +125 °C −40 to +125 °C −40 to +125 °C −40 to +125 °C −40 to +125 °C −40 to +125 °C −40 to +125 °C −40 to +125 °C PINS 14 14 14 14 14 14 14 14 14 14 PACKAGE DIP14 DIP14 SO14 SO14 SSOP14 SSOP14 TSSOP14 TSSOP14 DHVQFN14 DHVQFN14