11DQ06中文资料

合集下载

NORTE北电中文手册

LD 10PBX 电话机管理提示和响应－LD 10标号提示响应注释1 REQ 请求CHG 修改现有的数据块CPY n 从指定的分机数据块自动拷贝或生成1至32个新的分机数据块对Option 11各模式无效，版本12和其后的软件。

END 退出覆盖程序MOV 将数据块从一个TN移到另一个。

对Option 11各模式无效。

NEW X 增加新的数据块NEW后是一个1-255的数值,以生成此数目的接连的电话机数据块OUT X 取消数据块OUT后是一个1-255的数值,以取消此数目的接连的电话机数据块2 TYPE 数据块类型500500/2500电话机数据块500 M7Option 11的500/2500模式电话机数据块CARD 自动话机移位（ASR）的500/2500卡板块CARDSLT 单线电话机用户线卡板（版本19和其后的软件）OOSSLT20停止运行单线终端单元3 MODL71-127 模式号码，对Option 11模式话机提示。

4 CFTN 1 s c u 从TN拷贝，在REQ＝CPY时提示。

c u7用于Option11，用这个TN作为新话机的样板。

5 SFMT 对拷贝命令选用以下一种格式，在CLS＝AGTA时，提示POS。

D N输入项可长达4位,配备DNXP软件包150则长达7位TNDN 人工选择TN，DN和ACD电话机的ACD座席IDTN，DN和POS提示-n-次，如在CPY命令中所规定。

TN l s c u 新话机的TNDN xxxx 新话机的DNPOS xxxx ACD座席IDTN 新DN和ACD电话机的ACD座席ID是由系统提供的，对您提示要求开始的DN，ACD座席ID和每一个TN。

TN提示n次，如在CPY命令中所规定。

DN xxxx 新话机的DNPOS xxxx ACD座席IDTN l s c u 新话机的TNDN 新TN都是由系统提供的，对您提示要求开始的TN和每一个DN以及ACD电话机的ACD座席ID。

LOR976资料

LS R976, LO R976, LY R976Hyper CHIPLEDHyper-Bright LED2001-02-121Besondere Merkmale•Gehäusetyp: 0805•Besonderheit des Bauteils: extrem kleine Bauform 2,0 mm x 1,25 mm x 0,8 mm •Wellenl änge: 632 nm (super-rot), 605 nm (orange), 587 nm (gelb)•Abstrahlwinkel: extrem breite Abstrahlcharakteristik (160°)•Technologie: InGaAlP•optischer Wirkungsgrad: 7 lm/W (super-rot), 11 lm/W (orange, gelb)•Verarbeitungsmethode: f ür alle SMT-Best ücktechniken geeignet •L ötmethode: IR Reflow L öten•Vorbehandlung: nach JEDEC Level 2•Gurtung: 8 mm Gurt mit 4000/Rolle, ø180 mm Anwendungen•Informationsanzeigen im Au ßenbereich •Einkopplung in Lichtleiter•Hinterleuchtung (LCD, Handy, Schalter, Tasten, Displays, Werbebeleuchtung, Allgemeinbeleuchtung)•Signal- und Symbolleuchten•Markierungsbeleuchtung (z.B. Stufen, Fluchtwege, u.ä.)•SpielsachenFeatures•package: 0805•feature of the device: extremely small package 2.0 mm x 1.25 mm x 0.8 mm •wavelength: 632 nm (super-red), 605 nm (orange), 587 nm (yellow)•viewing angle: extremely wide (160°)•technology: InGaAlP•optical efficiency: 7 lm/W (super-red), 11 lm/W (orange, yellow)•assembly methods: suitable for all SMT assembly methods•soldering methods: IR reflow soldering •preconditioning: acc. to JEDEC Level 2•taping: 8 mm tape with 4000/reel, ø180 mmApplications•outdoor displays•coupling into light guides•backlighting (LCD, cellular phones, switches, keys, displays, illuminated advertising, general lighting)•signal and symbol luminaire•marker lights (e.g. steps, exit ways, etc.)•toys2001-02-122Helligkeitswerte werden mit einer Stromeinpr ägedauer von 25ms und einer Genauigkeit von ±11% ermittelt.Luminous intensity is tested at a current pulse duration of 25ms and a tolerance of ±11%.Anm.:gesamter Farbbereich, Lieferung in Einzelgruppen (siehe Seite 5)Die Standardlieferform von Serientypen beinhaltet eine untere bzw. eine obere Familiengruppe,die aus nur 3bzw.4 Halbgruppen besteht. Einzelne Halbgruppen sind nicht erhältlich.In einer Verpackungseinheit /Gurt ist immer nur eine Halbgruppe enthalten.Note:Total color tolerance range, delivery in single groups (please see page 5)The standard shipping format for serial types includes a lower or upper family group of 3or 4individual groups. Individual half groups are not available.No packing unit /tape ever contains more than one luminous intensity half group.TypTypeEmissionsfarbeColor of EmissionFarbe derLichtaustritts-fl ächeColor of the Light Emitting AreaLichtst ärkeLuminous Intensity I F = 20mA I V (mcd)BestellnummerOrdering Codemin.typ.LS R976super-red colorless diffused 1850Q62702-P5178LO R976orange colorless diffused 2870Q62702-P5176LY R976yellowcolorless diffused2860Q62702-P5177Grenzwerte Maximum RatingsBezeichnung Parameter SymbolSymbolWertValueEinheitUnitBetriebstemperatur Operating temperature range Top– 30 … + 85°CLagertemperaturStorage temperature range Tstg– 40 … + 85°CSperrschichttemperatur Junction temperature Tj+ 95°CDurchlassstrom Forward current IF25mAStoßstrom Surge currentt p = 10 µs, D = 0.1IFM0.1ASperrspannung Reverse voltage VR5VLeistungsaufnahme Power consumption Ptot65mWWärmewiderstand Thermal resistanceSperrschicht/UmgebungJunction/ambientSperrschicht/LötpadJunction/solder pointMontage auf PC-Board FR 4 (Padgröße ≥ 16mm2) mounted on PC board FR 4 (pad size ≥ 16 mm 2)Rth JARth JS800450K/WK/W2001-02-1232001-02-124Kennwerte (T A = 25 °C)Characteristics Bezeichnung ParameterSymbol SymbolWerte Values Einheit UnitLSLO LY Wellenl änge des emittierten Lichtes (typ.)Wavelength at peak emission I F = 20mAλpeak645610591nmDominantwellenl änge 1)(typ.)Dominant wavelength I F = 20mAλdom633± 6606± 6588± 8nmSpektrale Bandbreite bei 50 % I rel max (typ.)Spectral bandwidth at 50 % I rel max I F = 20mA∆λ161615nmAbstrahlwinkel bei 50 % I V (Vollwinkel)(typ.)Viewing angle at 50 % I V 2ϕ160160160Grad deg.Durchlassspannung 2)(typ.)Forward voltage (max.)I F = 20mA V F V F 2.02.4 2.02.4 2.02.4V VSperrstrom(typ.)Reverse current (max.)V R = 5 VI R I R 0.011000.011000.01100µA µATemperaturkoeffizient von λpeak (typ.)Temperature coefficient of λpeak I F = 20mA; –10°C ≤ T ≤ 100°C TC λpeak0.140.130.13nm/KTemperaturkoeffizient von λdom (typ.)Temperature coefficient of λdom I F = 20mA; –10°C ≤ T ≤ 100°C TC λdom0.010.070.10nm/KTemperaturkoeffizient von V F (typ.)Temperature coefficient of V F I F = 20mA; –10°C ≤ T ≤ 100°C TC V– 2.0– 1.7– 2.5mV/KOptischer Wirkungsgrad (typ.)Optical efficiency I F = 20mAηopt71111lm/W1)Wellenl ängengruppen werden mit einer Stromeinpr ägedauer von 25 ms und einer Genauigkeit von ±1nm ermittelt.Wavelength groups are tested at a current pulse duration of 25 ms and a tolerance of ±1nm.2)Spannungswerte werden mit einer Stromeinpr ägedauer von 1ms und einer Genauigkeit von ±0.1V ermittelt.Voltages are tested at a current pulse duration of 1ms and a tolerance of ±0.1V.1)Wellenlängengruppen für LY R976 Wavelength groups for LY R976Gruppe GroupWellenlängeWavelengthEinheitUnit min.max.3580584nm 4584588nm 5588592nm 6592596nm2001-02-125Relative spektrale Emission I rel = f (λ), T A = 25 °C, I F = 20mA Relative Spectral EmissionV(λ) = spektrale AugenempfindlichkeitStandard eye response curveAbstrahlcharakteristik I rel = f (ϕ)Radiation Characteristic2001-02-126Durchlassstrom I F = f (V F)Forward CurrentMaximal zulässiger Durchlassstrom I F = f (T) Max. Permissible Forward Current Relative Lichtstärke I V/I V(20mA) = f (I F) Relative Luminous IntensityV V(25 °C)ARelative Luminous Intensity2001-02-127MaßzeichnungPackage OutlinesMaße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). Gewicht / Approx. weight: 3.2 mg2001-02-128Lötbedingungen Vorbehandlung nach JEDEC Level 2Soldering Conditions Preconditioning acc. to JEDEC Level 2IR-Reflow Lötprofil(nach IPC 9501)IR Reflow Soldering Profile(acc. to IPC 9501)Empfohlenes Lötpaddesign IR Reflow LötenRecommended Solder Pad IR Reflow SolderingMaße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch) 2001-02-129Gurtung / Polarität und Lage Verpackungseinheit4000/Rolle, ø180 mm Method of Taping / Polarity and Orientation Packing unit4000/reel, ø180 mmMaße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).2001-02-1210LS R976, LO R976, LY R9762001-02-1211Published by OSRAM Opto Semiconductors GmbH & Co. OHGWernerwerkstrasse 2, D-93049 Regensburg© All Rights Reserved.Attention please!The information describes the type of component and shall not be considered as assured characteristics.Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization.If printed or downloaded, please find the latest version in the Internet.PackingPlease use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred.Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.1 A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or the effectiveness of that device or system.2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.Revision History:2001-02-12Previous Version:2001-02-12Page Subjects (major changes since last revision)元器件交易网。

SN65LV1224A资料

SN65LV1224A Deserializer
SYNC1 SYNC2 DIN0 DIN1 DIN2 DIN3 DIN4 DIN5 DIN6 DIN7 DIN8 DIN9 TCLK_R/F TCLK
1 2 3 4 5 6 7 8 9 10 11 12 13 14
28 27 26 25 24 23 22 21 20 19 18 17 16 15
Copyright 2003, Texas Instruments Incorporated
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
1
SN65LV1023A/SN65LV1224A 10-MHz TO 66-MHz, 10:1 LVDS SERIALIZER/DESERIALIZER
functional description (continued)
synchronization mode The deserializer PLL must synchronize to the serializer in order to receive valid data. Synchronization can be accomplished in one of two ways:
D Rapid Synchronization: The serializer has the capability to send specific SYNC patterns consisting of six
ones and six zeros switching at the input clock rate. The transmission of SYNC patterns enables the deserializer to lock to the serializer signal within a deterministic time frame. This transmission of SYNC patterns is selected via the SYNC1 and SYNC2 inputs on the serializer. Upon receiving valid SYNC1 or SYNC2 pulse (wider than 6 clock cycles), 1026 cycles of SYNC pattern are sent. When the deserializer detects edge transitions at the LVDS input, it attempts to lock to the embedded clock information. The deserializer LOCK output remains high while its PLL locks to the incoming data or SYNC patterns present on the serial input. When the deserializer locks to the LVDS data, the LOCK output goes low. When LOCK is low, the deserializer outputs represent incoming LVDS data. One approach is to tie the deserializer LOCK output directly to SYNC1 or SYNC2.

HLMP-BL11-N0T00中文资料

Agilent HLMP-ABxx, HLMP-BBxx, HLMP-ADxx, HLMP-BDxx, HLMP-AGxx, HLMP-BGxx, HLMP-ALxx, HLMP-BLxx,HLMP-AMxx, HLMP-BMxx T-13/4 (5 mm)Oval Precision Optical Performance AlInGaP and InGaN Lamps Data SheetFeatures•Well defined spatial radiation pattern•Viewing angles:Major axis 70°Minor axis 35°•High luminous output•Red and Amber Intensity are available for:AlInGaP (Bright)AlInGaP II (Brightest)•Colors:472 nm blue 526 nm green 626 nm red 630 nm red 590 nm amber 592 nm amber•Superior resistance to moisture •UV resistant epoxyBenefits•Viewing angle designed for wide field of view application•Red, green, and blue radiation patterns matched for full color sign•Superior performance in outdoor environments Applications•Full color/video signsDescriptionThese Precision O ptical Performance Oval LEDs are specifically designed for full color/video and passenger information signs. The oval shaped radiation pattern(35°x 70°) and high luminous intensity ensure that these devices are excellent for wide field of view outdoor application where a wide viewing angle and readability in sunlight areessential. These lamps have very smooth, matched radiation patterns ensuring consistent color mixing in full colorapplications, message uniformity across the viewing angle of the sign.High efficiency LED material is used in these lamps: Aluminum Indium Gallium Phosphide (AlInGaP) for amber and red,and Indium Gallium Nitride(InGaN) for blue and green. Each lamp is made with an advance optical grade epoxy offering superior high temperature and high moisture resistance in outdoor applications. The package epoxy contains both UV-A and UV-B inhibitors to reduce the effects of long term exposure to direct sunlight.Designers can select parallel or perpendicular orientation. Both lamps are available in tinted version.CAUTION: The blue and green LEDs are Class 1 ESD sensitive. Please observe appropriate precautions during handling and processing. Refer to Agilent Application Note AN-1142 for additio nal details.Table 1. Device Selection Guide for AlInGaP IIColor and Luminous Luminous ForwardDominant Intensity,Intensity,Voltage,LeadsWavelength I v (mcd) at I v (mcd) at V f (V)with Leadframe Package Part Numberλd (nm) Typ.20 mA Min.20 mA Max.Max.Stand-offs Orientation Drawing HLMP-AD06-P00xx Red 630880 2.4No Parallel A HLMP-AD06-P0Txx Red 630880 2.6No Parallel A HLMP-AD16-P00xx Red 630880 2.4Yes Parallel B HLMP-AD16-P0Txx Red 630880 2.6Yes Parallel B HLMP-AD16-RS0xx Red 63015002500 2.6Yes Parallel B HLMP-AD16-RSTxx Red 63015002500 2.6Yes Parallel B HLMP-AD16-RU0xx Red 63015004200 2.4Yes Parallel B HLMP-AD16-RUTxx Red 63015004200 2.6Yes Parallel B HLMP-AD16-ST0xx Red 63019003200 2.4Yes Parallel B HLMP-AD16-STTxx Red 63019003200 2.6Yes Parallel B HLMP-AL06-L00xx Amber 592400 2.4No Parallel A HLMP-AL06-L0Rxx Amber 592400 2.6No Parallel A HLMP-AL06-N00xx Amber 592680 2.4No Parallel A HLMP-AL06-N0Rxx Amber 592680 2.6No Parallel A HLMP-AL16-N00xx Amber 592680 2.4Yes Parallel B HLMP-AL16-N0Rxx Amber 592680 2.6Yes Parallel B HLMP-AL16-PSRxx Amber 5928802500 2.6Yes Parallel B HLMP-AL16-QR0xx Amber 59211501900 2.4Yes Parallel B HLMP-AL16-QRRxx Amber 59211501900 2.6Yes Parallel B HLMP-BD06-P00xx Red 630880 2.4No Perpendicular C HLMP-BD06-P0Txx Red 630880 2.6No Perpendicular C HLMP-BD06-RS0xx Red 63015002500 2.4No Perpendicular C HLMP-BD06-RSTxx Red 63015002500 2.6No Perpendicular C HLMP-BD16-P00xx Red 630880 2.4Yes Perpendicular D HLMP-BD16-P0Txx Red 630880 2.6Yes Perpendicular D HLMP-BD16-RU0xx Red 63015004200 2.4Yes Perpendicular D HLMP-BD16-RUTxx Red 63015004200 2.6Yes Perpendicular D HLMP-BD16-ST0xx Red 63019003200 2.4Yes Perpendicular D HLMP-BD16-STTxx Red 63019003200 2.6Yes Perpendicular D HLMP-BL06-N00xx Amber 592680 2.4No Perpendicular C HLMP-BL06-N0Rxx Amber 592680 2.6No Perpendicular C HLMP-BL06-QRKxx Amber 59211501900 2.4No Perpendicular C HLMP-BL06-QRSxx Amber 59211501900 2.6No Perpendicular C HLMP-BL16-N00xx Amber 592680 2.4Yes Perpendicular D HLMP-BL16-N0Rxx Amber 592680 2.6Yes Perpendicular D HLMP-BL16-PS0xx Amber 5928802500 2.4Yes Perpendicular D HLMP-BL16-PSRxx Amber 5928802500 2.6Yes Perpendicular DTable 2. LED IndicatorsDevice Selection Guide for AlInGaPColor and Luminous LuminousDominant Intensity,Intensity,LeadsWavelength I v (mcd) at I v (mcd) at with Leadframe Package Part Numberλd (nm) Typ.20 mA Min.20 mA Max.Stand-offs Orientation Drawing HLMP-AG01-K00xx Red 626310No Parallel A HLMP-AG11-KN0xx Red 626310880Yes Parallel B HLMP-AL01-K00xx Amber 590310No Parallel A HLMP-AL01-LP0xx Amber 5904001150No Parallel A HLMP-AL01-NR0xx Amber 5906801900No Parallel A HLMP-AL11-KN0xx Amber 590310880Yes Parallel B HLMP-AL11-NR0xx Amber 5906801900Yes Parallel B HLMP-BG01-LM0xx Red 626400520No Perpendicular C HLMP-BG01-MN0xx Red 626520880No Perpendicular C HLMP-BG11-KN0xx Red 626310880Yes Perpendicular D HLMP-BL01-NR0xx Amber 5906801900No Perpendicular C HLMP-BL11-KN0xx Amber 590310880Yes Perpendicular D HLMP-BL11-NR0xx Amber 5906801900Yes Perpendicular DTable 3. Device Selection Guide for InGaNColor and Dominant Luminous Intensity,Leads with Leadframe Package Part Number Wavelength λd (nm) Typ. Iv (mcd) at 20 mA Min.Stand-offs Orientation Drawing HLMP-AB01-J00xx Blue 472240No Parallel A HLMP-BB11-J00xx Blue 472240Yes Perpendicular D HLMP-BB11-K00xx Blue 472310Yes Perpendicular D HLMP-BM11-L00xx Green 526400Yes Perpendicular D HLMP-BM11-Q00xx Green 5261150Yes Perpendicular D HLMP-AB11-J00xx Blue 472240Yes Parallel B HLMP-AM01-Q00xx Green 5261150No Parallel A HLMP-BB01-J0Bxx Blue 472240No Perpendicular C HLMP-BB11-KN0xx Blue 472310Yes Perpendicular D HLMP-BM01-L00xx Green 526400No Perpendicular C Tolerance for intensity range limit is ±15%.Part Numbering SystemHLMP-X X X X - X X X XXMechanical Options00: Bulk PackagingDD: Ammo PackYY: Flexi-Bin; Bulk PackagingZZ: Flexi-Bin; Ammo PackColor Bin0: No Color Bin LimitationR: Color Bins 1, 2, 4, and 6 with V F max of 2.6 VT: Red Color with V F max of 2.6 VB: Color bin 2 and 3 onlyK: Color bins 2 and 4 onlyS: Color bins 2 and 4 with VF max of 2.6 VMaximum Intensity Bin0: No Iv Bin LimitationMinimum Intensity BinTint Option1 or 6: Matching Color TintsStandoff Option0: Without1: WithColorB: 472 nm BlueD: 630 nm RedG: 626 nm RedL: 590 or 592 nm AmberM: 526 nm GreenPackageA: 5 mm 35° x 70° Oval, ParallelB: 5 mm 35° x 70° O val, PerpendicularPackage Dimensions5.00 ±(0.197 ±8.71 ± 0.200.50 ± 0.10SQ. TYP.5.00 ±(0.197 ±5.00 ±(0.197 ±5.00 ±(0.197 ±ABCDNOTES:1. ALL DIMENSIONS ARE IN MILLIMETERS (INCHES).2. LEADS ARE MILD STEEL, SOLDER DIPPED.3. TAPERS SHOWN AT TOP OF LEADS (BOTTOM OF LAMP PACKAGE) INDICATE AN EPOXY MENISCUS THAT MAY EXTEND ABOUT 1 mm (0.040 IN.) DOWN THE LEADS.4. RECOMMENDED PC BOARD HOLE DIAMETERS:– LAMP PACKAGES A AND C WITHOUT STAND-OFFS: FLUSH MOUNTING AT BASE OF LAMP PACKAGE = 1.143/1.067 mm (0.044/0.042 IN.).– LAMP PACKAGES B AND D WITH STAND-OFFS: MOUNTING AT LEAD STAND-OFFS.Absolute Maximum Ratings at T A = 25˚CParameter Blue and Green Red and Amber DC Forward Current[1]30 mA50 mAPeak Pulsed Forward Current[2]100 mA100 mAAverage Forward Current30 mA30 mAReverse Voltage (I R = 100 µA) 5 VReverse Voltage (I R = 10 µA) 5 VPower Dissipation120 mW120 mWLED Junction Temperature130°C130°COperating Temperature Range–40°C to +80°C–40°C to +100°C Storage Temperature Range–40°C to +100°C–40°C to +120°C Wave Soldering Temperature[3]250°C for 3 seconds250°C for 3 seconds Notes:1.Derate linearly from Figure 7.2.Duty Factor 30% KHz.3.1.59 mm (0.060 in.) below body.Electrical/Optical Characteristics at T A = 25°CParameter Symbol Min.Typ.Max.Units Test Conditions Typical Viewing AngleMajor2θ1/270degMinor35Forward Voltage V F V I F = 20 mARed (λd = 626 nm) 2.0 2.4Red (λd = 630 nm)Option xx0xx 2.2 2.4Option xxTxx 2.3 2.6Amber (λd = 590 nm) 2.0 2.4Amber (λd = 592 nm)Option xx0xx 2.2 2.4Option xxRxx, xxSxx 2.3 2.6Blue (λd = 472 nm) 3.5 4.0Green (λd = 526 nm) 3.5 4.0Reverse VoltageAmber, Red V R520V I R = 100 µABlue, Green5–I R = 10 µAPeak Wavelength Peak of Wavelength of Amber (λd = 592 nm)λpeak594nm Spectral Distribution Red (λd = 630 nm)639at I F = 20 mABlue (λd = 472 nm)470Green (λd = 526 nm)524Spectral Halfwidth Wavelength Width Amber (λd = 592 nm)∆λ1/217nm at Spectral Distribution Red (λd = 630 nm)171/2 Power Point at Blue (λd = 472 nm)35I F = 20 mAGreen (λd = 526 nm)47Capacitance V F = 0, F = 1 MHz Amber, Red C40pFBlue, Green43Luminous Efficacy Emitted Luminous Amber (λd = 592 nm)ηv500lm/W Power/Emitted Radiant Red (λd = 630 nm)155Power at I F = 20 mA Blue (λd = 472 nm)75Green (λd = 526 nm)520Thermal Resistance RΘJ-PIN240°C/W LED Junction-to-Cathode LeadNotes:1.2θ1/2 is the off-axis angle where the luminous intensity is 1/2 the on-axis intensity.2.The radiant intensity, I e in watts per steradian, may be found from the equation I e = I v/ηv where I v is the luminous intensity in candelas and ηv isthe luminous efficacy in lumens/watt.3.The luminous intensity is measured on the mechanical axis of the lamp package.4.The optical axis is closely aligned with the package mechanical axis.5.The dominant wavelength, λd, is derived from theCIE Chromaticity Diagram and represents the color of the lamp.6.For Options -xxRxx, -xxSxx and -xxTxx, max. forward voltage (Vf) is 2.6 V. Refer to Vf bin table.Figure 1. Relative intensity vs. wavelength.Figure 2. Blue, green forward current vs.forward voltage.WAVELENGTH – nmR E L A T I V E I N T E N S I T Y1.00.500.40.30.20.10.60.70.80.9030251510I F – F O R W A R D C U R R E N T – m AV F – FORWARD VOLTAGE – V2.42.83.2 3.6520 2.6 3.0 3.4Figure 3a. Amber, red forward current vs.forward voltage.Figure 4. Blue, green relative luminous intensity vs. forward current.1.50.5I N T E N S I T Y N O R M A L I Z E D A T 20 m AI F – FORWARD CURRENT – mA01020301.051525C U R R E N T – m AV F – FORWARD VOLTAGE – V Figure 3b. Forward current vs. forward voltage for option -xxTxx red, and option -xxRxx and -xxSxx amber.D C F O R W A R D C U R RE N T – m AFORWARD VOLTAGE – VFigure 6. Blue, green maximum forward current vs. ambient temperature.Figure 7. Amber, red maximum forward current vs. ambient temperature.I F – F O R W A R D C U R R E N T – m A0T A – AMBIENT TEMPERATURE – °C40804020102060301005152535I F – F O R W A R D CU R R E N T – m AT A – AMBIENT TEMPERATURE – °CFigure 5. Amber, red relative luminous intensity vs. forward current.R E L A T I V E I N T E N S I T Y (N OR M A L I Z E D A T 20 m A )FORWARD CURRENT – mAFigure 8. Spatial radiation pattern – 35 x 70 degree lamps.R E L A T I V E I N T E N S I T Y – %1000VERTICAL ANGULAR DISPLACEMENT – DEGREES8060507020501030404020-10-30-50903010-20-40R E L A T I V E I N T E N S I T Y – %1000HORIZONTAL ANGULAR DISPLACEMENT – DEGREES8060507020501030404020-10-30-50903010-20-40Intensity Bin Limits (mcd at 20 mA)Bin Name Min.Max.G 140180H 180240J 240310K 310400L 400520M 520680N 680880P 8801150Q 11501500R 15001900S 19002500T 25003200U19002500Tolerance for each bin limit is ±15%.Amber Color Bin Limits (nm at 20 mA)Bin Name Min.Max.1584.5587.02587.0589.54589.5592.06592.0594.5Tolerance for each bin limit is ± 0.5 nm.Notes:1.All bin categories are established for classifi-cation of products. Products may not beavailable in all bin categories. Please contact your Agilent representative for further information.2. Vf bin table only available for those numbers with options -xxRxx, -xxSxx, -xxTxx.Blue Color Bin Limits (nm at 20 mA)Bin Name Min.Max.1460.0464.02464.0468.03468.0472.04472.0476.05476.0480.0Tolerance for each bin limit is ± 0.5 nm.Green Color Bin Limits (nm at 20 mA)Bin Name Min.Max.1520.0524.02524.0528.03528.0532.04532.0536.05536.0540.0Tolerance for each bin limit is ±0.5 nm.Vf Bin Table [2]Bin Id Min.Max.VA 2.0 2.2VB 2.2 2.4VC2.4 2.6/semiconductors For product information and a complete list of distributors, please go to our web site.For technical assistance call:Americas/Canada: +1 (800) 235-0312 or (916) 788-6763Europe: +49 (0) 6441 92460China: 10800 650 0017Hong Kong: (+65) 6756 2394India, Australia, New Zealand: (+65) 6755 1939 Japan: (+81 3) 3335-8152(Domestic/Interna-tional), or 0120-61-1280(Domestic Only) Korea: (+65) 6755 1989Singapore, Malaysia, Vietnam, Thailand, Philippines, Indonesia: (+65) 6755 2044 Taiwan: (+65) 6755 1843Data subject to change.Copyright © 2004 Agilent Technologies, Inc. August 27, 20045988-9224EN。

M12L64322A-5BG中文资料

66 A9 65 A8 64 A7 63 A6 62 A5 61 A4 60 A3 59 DQM3 58 VSS
57 NC 56 DQ31 55 VDDQ 54 DQ30 53 DQ29 52 VSSQ 51 DQ28 50 DQ27 49 VDDQ 48 DQ26 47 DQ25 46 VSSQ 45 DQ24 44 VSS
M12L64322A
512K x 32 Bit x 4 Banks Synchronous DRAM
ORDERING INFORMATION
86 Pin TSOP (TypeII) (400mil x 875mil)
Product No. MAX FREQ. PACKAGE COMMENTS
M12L64322A-5TG 200MHz TSOPII
Revision 1.9(Nov. 04 2005) - Modify tCC / tRCD spec
Revision 2.0(Dec. 08 2005) - Add –5T speed grade
Revision 2.1(Mar. 08 2006) - Modify Inch Dimension Max. A2 from 0.011 to 0.041
E VDDQ DQ31 NC
NC DQ16 VSSQ
F VSS DQM3 A3
A2 DQM2 VDD
G A4 A5 A6
A10 A0 A1
H A7 A8 NC
NC BA1 NC
J CLK CKE A9
BA0 CS RAS
K DQM1 NC NC
CAS WE DQM0
L VDDQ DQ8 VSS
VDD DQ7 VSSQ
Pb-free

12CWQ06FN中文资料

CT Typ. Junction Capacitance (Per Leg)
LS Typical Series Inductance (Per Leg)
(1) Pulse Width < 300µs,.61 0.79 0.57
0.72 3 35
0.36 24.14 360
(Per Leg)
10
10 0 10 20 30 40 50 60 70
Reverse V oltag e - V R (V ) Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage (Per Leg)
Therm al Im pedance Z thJC ( C/W )
1000
T J= 25 C 100
Junction Capacitance - C T (pF)
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4
Forward Voltage Drop - VFM (V) Fig. 1 - Max. Forward Voltage Drop Characteristics
320
Surge Current * See Fig. 7
105
EAS Non-Repet.Avalan.Energy(PerLeg)
7
IAR RepetitiveAvalancheCurrent
0.8
(Per Leg)
A 50% duty cycle @ TC = 131°C, rectangular wave form
VRRM
12
A
60
V
IFSM @ tp = 5 µs sine

EDI9LC644AV2012BC中文资料

N DQ12 DQ11
VCC
VSS
VSS
VSS
VCC DQ4 DQ0 N
P DQ13 DQ10
VCC
VSS SSCLK VSS
VCC DQ5 DQ1 P
R VCCQ VCCQ
VCC
VSS
VSS
VSS
VCC VCCQ VCCQ R
T DQ14 DQ9
VCC SSADC SSWE NC
VCC DQ6 DQ2 T
Input
DQ0-31 BWE0-3
Input Output
Input
Vcc, Vss VCCQ
Supply Supply
OUTPUT FUNCTIONAL DESCRIPTIONS
Signal Pulse Pulse Pulse Pulse Pulse Pulse
Level
Level Pulse
Polarity
The EDI9LC644VxxBC provides a total memory solution for the Texas Instruments TMS320C6201 and the TMS320C6701 DSPs
The Synchronous Pipeline SRAM is available with clock speeds of 200, 166,150, and 133 MHz, allowing the user to develop a fast external memory for the SSRAM interface port .
2
DQ0-31
元器件交易网
EDI9LC644V EDI9LC644AV
Symbol

ALD1106中文资料

元器件交易网
ADVANCED LINEAR DEVICES, INC.
ALD1106/ALD1116
QUAD/DUAL N-CHANNEL MATCHED MOSFET ARRAY
GENERAL DESCRIPTION
The ALD1106/ALD1116 are monolithic quad/dual N-channel enhancement mode matched MOSFET transistor arrays intended for a broad range of precision analog applications. The ALD1106/ALD1116 offer high input impedance and negative current temperature coefficient. The transistor pairs are matched for minimum offset voltage and differential thermal response, and they are designed for switching and amplifying applications in +2V to +12V systems where low input bias current, low input capacitance and fast switching speed are desired. These MOSFET devices feature very large (almost infinite) current gain in a low frequency, or near DC, operating environment. The ALD1106/ALD1116 are building blocks for differential amplifier input stages, transmission gates, and multiplexer applications, current sources and many precision analog circuits.

FQD11P06中文资料

1200 1000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
800
C
oss
Ciss
% Notes :
600
1. VGS = 0 V
2. f = 1 MHz
400 Crss
200
0
10-1
100
101
-VDS, Drain-Source Voltage [V]
-- 195 250 pF
--
45
60
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
IDSS
Zero Gate Voltage Drain Current
VDS = -60 V, VGS = 0 V
--
VDS = -48 V, TC = 125°C
--
IGSSF
Gate-Body Leakage Current, Forward VGS = -25 V, VDS = 0 V
--
IGSSR
元器件交易网
FQD11P06 / FQU11P06
FQD11P06 / FQU11P06
60V P-Channel MOSFET
QFET TM
General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

11C90中文资料

VIL
Input LOW Voltage
0C mV
a 25 C a 75 C a 25 C a 25 C a 25 C a 25 C
IIH
Input HIGH Current CP Input (Note 1) MS Input M1 and M2 Input Input LOW Current Power Supply Current Operating Supply Voltage Range Reference Voltage 05
b 1060 b 1025 b 980 b 1820 b 1135 b 1095 b 1035 b 1870 b 1850 b 1830
Typ
b 995 b 960 b 910 b 1705
Max
b 905 b 880 b 805 b 1620 b 840 b 810 b 720 b 1500 b 1485 b 1460
b 110 b 119 b5 7 b 1550 b 75 b5 2
400 400 250
mA mA mA
IIL IEE VEE VREF
VIN e VILB Pins 6 7 13 not connected
Units mV
TA 0C
a 25 C a 75 C
Conditions Load e 50X to b2V
VOL VIH
mV
0 C to
a 75 C
0C mV
a 25 C a 75 C
Guaranteed Input HIGH Signal (Note 6) Guaranteed Input LOW Signal VIN e VIHA
元器件交易网
11C90 11C91 650 MHz Prescalers

1056Na-钠表中文手册

2.1 通用要求 ........................................................................................................................................ 10 2.2 机箱安装 ........................................................................................................................................ 10 2.3 流路系统连接 ................................................................................................................................ 11 2.4 排放连接 ........................................................................................................................................ 11 2.5 氨气连接 ........................................................................................................................................ 11 2.6 电极安装 ........................................................................................................................................ 12

XN06111中文资料

−10
−1
− 0.1
− 0.01 − 0.1
−1
−10
−100
Output current IO (mA)
2
SJJ00093BED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
Tr1 Tr2
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio hFE Ratio * Collector-emitter saturation voltage Output voltage high-level Output voltage low-level Input resistance Resistance ratio Transition frequency Symbol VCBO VCEO ICBO ICEO IEBO hFE hFE(Small
−100
VCE(sat) IC
IC / IB = 10

艾默生UH11-0060l

Nhomakorabea目录
第一章产品介绍......................................................................................................1 1.1 产品用途 ................................................................................................................1 1.2 产品分类 ................................................................................................................1 1.3 系统工作原理框图 ................................................................................................1 1.4 特性简介 ................................................................................................................2 1.5 外观及面板使用说明 ............................................................................................4 1.5.1 外观图示 .....................................................................................................4 1.5.2 LCD 面板操作说明 ....................................................................................4 1.5.3 后面板的使用说明 .....................................................................................9

FQB11P06中文资料

FQB11P06中文资料DG S2 I2-PAKG SDNotes:1. Repetitive Rating : Pulse width limited by maximum junction temperature2. L = 1.44mH, I AS = -11.4A, V DD = -25V, R G = 25 ?, Starting T J = 25°C3. I SD ≤ -11.4A, di/dt ≤ 300A/μs, V DD ≤ BV DSS, Starting T J = 25°C4. Pulse Test : Pulse width ≤300μs, Duty cycle ≤2%5. Essentially independent of operating temperatureOn CharacteristicsV GS(th)Gate Threshold Voltage V DS = V GS , I D = -250 μA -3.0---5.0V R DS(on)Static Drain-Source On-Resistance V GS = -10 V, I D = -5.7 A --0.140.175?g FSForward TransconductanceV DS = -30 V, I D = -5.7 A--5.1--SDynamic CharacteristicsC iss Input Capacitance V DS = -25 V, V GS = 0 V, f = 1.0 MHz--420550pF C oss Output Capacitance--195250pF C rssReverse Transfer Capacitance--4560pFSwitching Characteristicst d(on)Turn-On Delay Time V DD = -30 V, I D = -5.7 A,R G = 25 ?-- 6.525ns t r Turn-On Rise Time --4090ns t d(off)Turn-Off Delay Time --1540ns t f Turn-Off Fall Time --45100ns Q g Total Gate Charge V DS = -48 V, I D = -11.4 A,V GS = -10 V --1317nC Q gs Gate-Source Charge -- 2.0--nC Q gdGate-Drain Charge--6.3--nCDrain-Source Diode Characteristics and Maximum RatingsI S Maximum Continuous Drain-Source Diode Forward Current -----11.4A I SM Maximum Pulsed Drain-Source Diode Forward Current-----45.6A V SD Drain-Source Diode Forward Voltage V GS =0 V, I S = -11.4 A -----4.0V t rr Reverse Recovery Time V GS = 0 V,I S = -11.4 A,dI F / dt = 100 A/μs--83--ns Q rrReverse Recovery Charge--0.26--μC(Note 4)(Note 4, 5) (Note 4, 5) (Note 4)TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet Identification Product Status DefinitionAdvance InformationFormative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.PreliminaryFirst ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.ACEx?Bottomless?CoolFET?CROSSVOLT?DenseTrench?DOME?EcoSPARK?E 2CMOS?EnSigna?FACT?FACT Quiet Series?FAST ?FASTr?FRFET?GlobalOptoisolator?GTO?HiSeC?ISOPLANAR?LittleFET?MicroFET?MICROWIRE?OPTOLOGIC?OPTOPLANAR?PACMAN ?POP?PowerTrench ?QFET?QS?QT Optoelectronics?Quiet Series?SLIENT SWITCHER ?SMART START?Stealth?SuperSOT?-3SuperSOT?-6SuperSOT?-8SyncFET?TinyLogic?UHC?UltraFET ?VCX?。

HLMP-CB11-Q0ADD中文资料

Agilent HLMP-CxxxT-13/4 (5mm) Extra Bright Precision Optical Performance InGaN LED Lamps Data SheetDescriptionThese high intensity blue and green LEDs are based on the most efficient and cost effective InGaN material technology. The 470 nm typical dominant wave–length for blue and 525 nm typical wavelength for green is well suited to color mixing in full color signs. The 505 nm typical dominant wavelength for cyan is suitable for traffic signal application.These LED lamps are untinted, non-diffused, T-13/4 packagesFeatures•Well defined spatial radiationpattern•High luminous output•Available in blue, green, and cyancolor•Viewing angle: 15°, 23°and 30°•Standoff or non-standoff leads•Superior resistance to moistureApplications•Traffic signals•Commercial outdoor advertising•Front panel backlighting•Front panel indicator incorporating second generationoptics which produce well-definedspatial radiation patterns atspecific viewing cone angles.These lamps are made with anadvanced optical grade epoxy,offering superior temperatureand moisture resistance inoutdoor signal and signapplications. The high maximumLED junction temperature limitof +110°C enables hightemperature operation in brightsunlight conditions.HLMP-CB11, HLMP-CB12, HLMP-CM11, HLMP-CM12, HLMP-CE11,HLMP-CE12, HLMP-CB26, HLMP-CB27, HLMP-CM26, HLMP-CM27,HLMP-CE26, HLMP-CE27, HLMP-CB36, HLMP-CB37, HLMP-CM36,HLMP-CM37, HLMP-CE36, HLMP-CE37CAUTION: Devices are Class I ESD sensitive. Please observe appropriate precautions during handling and processing. Refer to Application Note AN-1142 for additional details.Package DimensionsPackage APackage B5.80 ± 0.20(0.228 ±∅ CATHODEFLATMIN.SQ. TYP.NOTES:1. MEASURED JUST ABOVE FLANGE.2. ALL DIMENSIONS ARE IN MILLIMETERS (INCHES).3. EPOXY MENISCUS MAY EXTEND ABOUT 1 mm (0.040") DOWN THE LEADS.4. IF HEAT SINKING APPLICATION IS REQUIRED, THE TERMINAL FOR HEAT SINK IS ANODE.Device Selection GuideTypicalViewing Angle,Intensity (cd) at 20 mA PackagePart Number Color2q1/2 (Degree)Min.Max.Standoff Dimension Lens HLMP-CB11-TW0xx Blue15 2.57.2No A Clear HLMP-CB11-UVAxx Blue15 3.2 5.5No A Clear HLMP-CB12-TW0xx Blue15 2.57.2Yes B Clear HLMP-CM11-Y20xx Green159.327.0No A Clear HLMP-CM11-Z1Cxx Green1512.021.0No A Clear HLMP-CM12-Y20xx Green159.327.0Yes B Clear HLMP-CE11-X10xx Cyan157.221.0No A Clear HLMP-CE12-X10xx Cyan157.221.0Yes B Clear HLMP-CB26-SV0xx Blue23 1.9 5.5No A Clear HLMP-CB26-TUDxx Blue23 2.5 4.2No A Clear HLMP-CB27-SV0xx Blue23 1.9 5.5Yes B Clear HLMP-CM26-X10xx Green237.221.0No A Clear HLMP-CM26-YZCxx Green239.316.0No A Clear HLMP-CM27-X10xx Green237.221.0Yes B Clear HLMP-CE26-WZ0xx Cyan23 5.516.0No A Clear HLMP-CE27-WZ0xx Cyan23 5.516.0Yes B Clear HLMP-CB36-QT0xx Blue30 1.15 3.2No A Clear HLMP-CB36-RSAxx Blue30 1.5 2.5No A Clear HLMP-CB37-RU0xx Blue30 1.5 4.2Yes B Clear HLMP-CB37-RSDxx Blue30 1.5 2.5Yes B Clear HLMP-CM36-X10xx Green307.221.0No A Clear HLMP-CM36-XYCxx Green307.212.0No A Clear HLMP-CM37-X10xx Green307.221.0Yes B Clear HLMP-CM37-XYCxx Green307.212.0Yes B Clear HLMP-CM37-XYDxx Green307.212.0Yes B Clear HLMP-CE36-WZ0xx Cyan30 5.516.0No A Clear HLMP-CE37-WZ0xx Cyan30 5.516.0Yes B ClearNotes:1.Tolerance for luminous intensity measurement is ±15%.2.The luminous intensity is measured on the mechanical axis of the lamp package.3.The optical axis is closely aligned with the package mechanical axis.4.LED light output is bright enough to cause injuries to the eyes. Precautions must be taken to prevent looking directly at the LED without propersafety equipment.5. 2q1/2 is the off-axis angle where the luminous intensity is 1/2 the on-axis intensity.Part Numbering SystemHLMP-x x xx-x x x xxMechanical Options00: BulkDD: Ammo PackColor Bin Options0: Full Color Bin DistributionA: Color Bin 1 and 2C: Color Bin 3 and 4D: Color Bin 4 and 5Maximum Intensity Bin0: No Maximum Intensity Bin LimitationOthers: Refer to Device Selection GuideMinimum Intensity BinRefer to Device Selection GuideViewing Intensity Bin11: 15° Without Standoff12: 15°With Standoff26: 23°Without Standoff27: 23°With Standoff36: 30°Without standoff37: 30°With StandoffColorB: Blue 470 nmM: Green 525 nmE: Cyan 505 nmPackageC: T-13/4 (5 mm) Round LampAbsolute Maximum Rating at T A = 25°CParameters Value UnitDC Forward Current [1]30mAPeak Pulsed Forward Current[3]100mAAverage Forward Current30mAPower Dissipation120mWLED Junction Temperature110°COperating Temperature Range–40 to +85°CStorage Temperature Range–40 to +100°CWave Soldering Temperature[2]250 for 3 secs°CNotes:1.Derate linearly as shown in Figure2.2.1.59 mm (0.060 inch) below body.3.Duty factor 10%, frequency 1 KHz.Electrical/Optical CharacteristicsT A = 25o CBlue Green CyanParameters Symbol Min.Typ.Max.Min.Typ.Max.Min.Typ.Max.Units Test Condition Forward Voltage V F 3.5 4.0 3.6 4.0 3.5 4.0V I F = 20 mA Reverse Voltage[1]V R 5.0 5.0 5.0V I R = 10 µA Thermal Resistance R q J-PIN240240240o C/W LED Junction toAnode Lead Dominant l d460470480520525540490505510nm I F = 20 mA Wavelength[2]Peak Wavelength l PEAK464516501nm Peak of Wavelengthof Spectral Distribu-tion at I F = 20 mA Spectral Half Width Dl1/2233230nm Wavelength Widthat Spectral Distribu-tion Power Pointat I F = 20 mA Luminous Efficacy[3]h v74484319lm/W Emitted LuminousPower/EmittedRadiant Power Notes:1.The reverse voltage of the product is equivalent to the forward voltage of the protective chip at I R = 10 µA.2.The dominant wavelength, l d, is derived from the Chromaticity Diagram and represents the color of the lamp.3.The radiant intensity, Ie in watts/steradian, may be found from the equation Ie = Iv/h v, where Iv is the luminous intensity in candelas and h v is theluminous efficacy in lumens/watt.Figure 5. Relative intensity vs. DC forward current.Figure 4. Relative dominant wavelength vs. DC forward current.DC FORWARD CURRENT – mAR E L A T I V E D O M I N A N T W A V E L E N G T H (N O R M A L I Z E D A T 20 m A )1020301.0250.9901.0151.0201.0101.0051.0000.995GREENBLUER E L A T I V E I N T E N S I T Y (N O R M A L I Z E D A T 20 m A )FORWARD CURRENT – mAFigure 1. Relative intensity vs. wavelength.Figure 3. Forward current vs. forward voltage.Figure 2. Forward current vs. ambient temperature.WAVELENGTH – nmR E L A T I V E I N T E N S I T Y1.0000.800.600.400.20030103.0202.01.0F O R W A R D C U R R E N T – m AFORWARD VOLTAGE – V 4.0CYANGREENBLUEI F – F O R W A R D C U R R E N T – m AV F – FORWARD VOLTAGE – VOLTSFigure 6. Spatial radiation pattern for Cx11 and Cx12.R E L A T I V E L U M I N O U S I N T E N S I T Y10ANGULAR DISPLACEMENT – DEGREES0.5-90-600-30306090Figure 7. Spatial radiation pattern for Cx26 and Cx27.Figure 8. Spatial radiation pattern for Cx36 and Cx37.R E L A T I V E L U M I N O U S I N T E N S I T Y10ANGULAR DISPLACEMENT – DEGREES0.5-90-600-30306090R E L A T I V E L U M I N O U S I N T E N S I T Y10ANGULAR DISPLACEMENT – DEGREES0.5-90-600-30306090Intensity Bin Limit TableIntensity (mcd) at 20 mA Bin Min MaxN680880P8801150Q11501500R15001900S1*******T25003200U32004200V42005500W55007200X72009300Y930012000Z1200016000 11600021000 Tolerance for each bin limit is ±15%.Blue Color Bin TableBin Min Dom Max Dom Xmin Ymin Xmax Ymax 1460.0464.00.14400.02970.17660.09660.18180.09040.13740.0374 2464.0468.00.13740.03740.16990.10620.17660.09660.12910.0495 3468.0472.00.12910.04950.16160.12090.16990.10620.11870.0671 4472.0476.00.11870.06710.15170.14230.16160.12090.10630.0945 5476.0480.00.10630.09450.13970.17280.15170.14230.09130.1327 Tolerance for each bin limit is ±0.5 nm.Cyan Color Bin TableBin Min Dom Max Dom Xmin Ymin Xmax Ymax 1490.0495.00.04540.29450.11640.38890.13180.3060.02350.4127 2495.0500.00.03450.41270.10570.47690.11640.38890.00820.5384 3500.0505.00.00820.53840.10270.55840.10570.47690.00390.6548 4505.0510.00.00390.65480.10970.62510.10270.55840.01390.7502 7498.0503.00.01320.48820.10280.52730.10920.44170.00400.6104 8503.0508.00.00400.61040.10560.60070.10280.52730.00800.7153 Tolerance for each bin limit is ±0.5 nm.Green Color Bin TableBin Min Dom Max Dom Xmin Ymin Xmax Ymax 1520.0524.00.07430.83380.18560.65560.16500.65860.10600.8292 2524.0528.00.10600.82920.20680.64630.18560.65560.13870.8148 3528.0532.00.13870.81480.22730.63440.20680.64630.17020.7965 4532.0536.00.17020.79650.24690.62130.22730.63440.20030.7764 5536.0540.00.20030.77640.26590.60700.24690.62130.22960.7543 Tolerance for each bin limit is ±0.5 nm./semiconductors For product information and a complete list of distributors, please go to our web site.For technical assistance call:Americas/Canada: +1 (800) 235-0312 or (916) 788-6763Europe: +49 (0) 6441 92460China: 10800 650 0017Hong Kong: (+65) 6756 2394India, Australia, New Zealand: (+65) 6755 1939 Japan: (+81 3) 3335-8152(Domestic/Interna-tional), or 0120-61-1280(Domestic Only) Korea: (+65) 6755 1989Singapore, Malaysia, Vietnam, Thailand, Philippines, Indonesia: (+65) 6755 2044 Taiwan: (+65) 6755 1843Data subject to change.Copyright © 2004 Agilent Technologies, Inc. December 7, 20045989-1022EN。

11DQ03中文资料

Dimensions in millimeters and inchesConform to JEDEC Outline DO-204AL (DO-41)CASE STYLE AND DIMENSIONSMajor Ratings and Characteristics I F(AV)Rectangular1.1A waveform V RRM30/40V I FSM @ tp = 5 µs sine 225A V F @1 Apk, T J= 25°C 0.55V TJrange- 40 t o 150°CCharacteristics11DQ..UnitsThe 11DQ.. axial leaded Schottky rectifier has been optimizedfor very low forward voltage drop, with moderate leakage.Typical applications are in switching power supplies, convert-ers, free-wheeling diodes, and reverse battery protection.Low profile, axial leaded outlineHigh purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Very low forward voltage drop High frequency operationGuard ring for enhanced ruggedness and long term reliabilityDescription/FeaturesSCHOTTKY RECTIFIER1.1 Amp11DQ0311DQ04111DQ03, 11DQ04Voltage Ratings3040I F(AV)Max. A verage F orward C urrent1.1A50% duty cycle @ T A =75 °C, r ectangular w ave f orm* See F ig. 4I FSM Max. P eak O ne C ycle N on-Repetitive2255µs Sine or 3µs Rect. pulseSurge C urrent * S ee F ig. 63510ms Sine or 6ms Rect. pulse Absolute Maximum RatingsParameters11DQ..UnitsConditionsV FMMax. F orward Voltage Drop0.55V @ 1A * See Fig. 1(1)0.71V @ 2A 0.50V @ 1A 0.61V @ 2AI RM Max. Reverse Leakage Current 1.0mA T J = 25 °C * See Fig. 2(1)6.0mA T J = 125 °CC T Typical Junction Capacitance60pF V R = 5V DC , (test signal range 100Khz to 1Mhz) 25°C L STypical Series Inductance8.0nHMeasured lead to lead 5mm from package bodyT J = 25 °C T J = 125 °C V R = rated V RParameters11DQ..UnitsConditionsElectrical SpecificationsF ollowing any ratedload condition and withrated V RRM appliedA(1) Pulse Width < 300µs, Duty Cycle <2%T J Max. J unction T emperature R ange -40 t o 150°C T stgMax. S torage T emperature R ange-40 t o 150°CR thJA Max. T hermal R esistance J unction130°C/W DC o perationto A mbient Without c ooling f inR thJA Typical T hermal R esistance J unction81°C/W PC b oard m ounted [L =8mm (0.315 i n.)]to A mbient w ith P C B oard M ounted Solder l and a rea 100mm 2(0.155 i n 2.)wtApproximate W eight 0.33(0.012)g (oz.)Case S tyleDO-204AL(DO-41)Thermal-Mechanical SpecificationsParameters11DQ..UnitsConditions11DQ03, 11DQ0411DQ03, 11DQ0411DQ03, 11DQ04。

JASO_D611-2009中文版

加热变形性
按规定进行试验后，进行 6.3 的耐压试验，绝缘不应
6.7
破坏。
附着力
应为表 8 所示值以上
6.8
低温性
卷绕
试验后不应露导体，且进行 6.3 的耐压试验，绝缘不应破坏。
6.9a)
耐热性 1
耐热性（B）加热，弯曲后，进行 6.3 的耐压试验，绝缘不应破坏。耐热性（C）加热后，绝缘不应有开裂和熔融迹象。
HF：汽车用无卤绝缘低压电线
AVS：汽车用薄壁低压电线 1 型
AVSS、CAVS 或 CAV：汽车用薄壁低压电线 2 型
HFSS：汽车用极薄壁无卤绝缘低压电线
CHFS：汽车用压缩导体极薄壁无卤绝缘低压电线
CAVUS：汽车用薄壁低压电线 3 型
CHFUS：汽车用压缩导体超薄壁无卤绝缘低压电
EB：汽车用接地低压电线
6.7
破坏。
附着力
应为表 8 所示值以上
6.8
低温性
卷绕冲击
试验后不应露导体，且进行 6.3 的耐压试验，绝缘不应破坏。试验后不应露导体，且进行 6.3 的耐压试验，绝缘不应破坏。
6.9a) 6.9b)
耐磨性
拖磨刮磨
应为表 9 所示最小耐磨值以上。应为表 10 所示最小往复次数以上。
6.10a) 6.10b)
而且本标准也适于构成多芯电缆的单个线芯。该电线的额定电压为交流 25V，直流 60 V。
2 引用标准
下面所列标准，由本标准所引用，构成本标准的一部分，这些引用的标准适于其最新版本（包括其增补）
JASO D 607 汽车零件—线束用电线的颜色 JASO D 618 汽车用低压电线的试验方法 JIS C 3102 电工用软铜线 JIS C 3152 镀锡软铜线 JIS C 3406 汽车用低压电线