TLE2142AIP中文资料

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AIP9272 AIP9274中微爱芯运算放大器

AIP9272 AIP9274中微爱芯运算放大器

1、概述AiP9272/4是一款具有高输入阻抗、极低功耗、高增益、高稳定性、采用CMOS工艺的二/四路微功耗运算放大器。

AiP9272/4允许共模输入电压范围可以低于负电压,轨到轨的输出电压范围,输出可以提供合理的输出驱动电流,该电流既可以是输出拉电流也可以是输出灌电流。

此高性价比的器件非常适合于高增益、低频、低功耗的应用场合,尤其是电池电源系统的理想选择,μA级电流功耗可以延长电池的寿命。

AiP9272/4 主要应用在电池电源系统、感应放大器、低功耗增益模块、低功耗比较器、信号检测器、有源滤波器、通讯系统等领域。

其主要特点如下:●每一路独立的微功耗运算放大器●宽范围的电源电压:1.6V-5.5V●高输入阻抗●单电源系统●低功耗:<5μA每个运放●轨到轨输出●同时提供输出灌电流和拉电流选型表:产品名称放大器个数封装形式AiP9274 4 DIP14/SOP14AiP9272 2 DIP8/SOP8/TSSOP8订购信息:管装:产品型号封装形式打印标识管装数盒装管盒装数箱装盒箱装数备注说明AiP9272SA.TB SOP8 AiP9272100PCS/管100管/盒10000PCS/盒10盒/箱100000PCS/箱塑封体尺寸:4.9mm×3.9mm引脚间距:1.27mmAiP9272DA.TB DIP8 AiP927250PCS/管40管/盒2000PCS/盒10盒/箱20000PCS/箱塑封体尺寸:9.2mm×6.4mm引脚间距:2.54mmAiP9274SA.TB SOP14 AiP927450PCS/管200管/盒10000PCS/盒5盒/箱50000PCS/箱塑封体尺寸:8.7mm×3.9mm引脚间距:1.27mmAiP9274DA.TB DIP14 AiP927425PCS/管40管/盒10000PCS/盒10盒/箱10000PCS/箱塑封体尺寸:19.0mm×6.4mm引脚间距:2.54mm编带:产品型号封装形式打印标识编带盘装数编带盒装数箱装数备注说明AiP9272SA.TR SOP8(1) AiP9272 4000PCS/盘8000PCS/盒64000PCS/箱塑封体尺寸:4.9mm×3.9mm引脚间距:1.27mmAiP9272SA.TR SOP8(2) AiP9272 2500PCS/盘5000PCS/盒40000PCS/箱塑封体尺寸:4.9mm×3.9mm引脚间距:1.27mmAiP9272TA.TR TSSOP8(1) AiP9272 3000PCS/盘3000PCS/盒30000PCS/箱塑封体尺寸:4.0mm×3.0mm引脚间距:0.65mmAiP9272TA.TR TSSOP8(2) AiP9272 6000PCS/盘6000PCS/盒60000PCS/箱塑封体尺寸:4.0mm×3.0mm引脚间距:0.65mmAiP9274SA.TR SOP14 AiP9274 2500PCS/盘5000PCS/盒40000PCS/箱塑封体尺寸:8.7mm×3.9mm引脚间距:1.27mm注:如实物与订购信息不一致,请以实物为准。

AIP1628 TM1628中微爱芯LED显示驱动芯片

AIP1628 TM1628中微爱芯LED显示驱动芯片

AIP1628LED Driver ICProduct SpecificationSpecification Revision History :Version Data Description2010-01-A 2012-01-B1 2010-012012-01Replace the new templateIncrease in the number and history1/ 121、GENERAL DESCRIPTIONAIP1628是一款以1/5至1/8占空比驱动的LED 控制器。

10个段输出线,4个网格输出线,3个段/网格输出线,一个显示存储器,控制电路,键扫描电路都集成到一个芯片中,从而为单片机构建了高度可靠的外围设备。

通过三线串行接口连接到AIP1628。

AIP1628引脚采用28引脚SOP 封装,经过优化,可简化PCB 布局并节省成本。

Features● ● ● ● ● ● ● ● CMOS technologyLow power consumptionMultiple display modes (10 segment, 7 grid to 13 segment, 4 grid) Key scanning (10 x 2 Matrix) 8-step dimming circuitrySerial interface for clock, data input, data output, strobe pins Built-in RC oscillator: (450KHz±5%) Available in 28 pins, SOP2、BLOCK DIAGRAM AND PIN DESCRIPTION2.1、PIN CONFIGURATIONSNC 1 28 27 26GND DIO 2 CLK 3 STB 4 K1 5 GRID1 GRID225 GND 24 23 22GRID3 K2 6 GRID4 GNDVDD 7 SEG1/KS1 8 21 VDD SEG2/KS2 SEG3/KS3 9 20 19SEG14/GRID5 SEG13/GRID610 11 12 SEG4/KS4 18 SEG12/GRID7 17 SEG10/KS10 16 SEG9/KS9 15 SEG8/KS8SEG5/KS5 SEG6/KS6 13 14SEG7/KS72/ 122.2、PIN DESCRIPTION Pin No. Pin Name Description1 NCData input PinThis pin inputs serial data at the rising edge of the shift clock(starting from the lower bit)2 DIOData Output pin(N-Channel, Open-Drain)Clock input Pin .This pin reads serial data at the rising edge andoutputs data at the falling edge. 3 4CLKSTB Serial Interface Strobe PinThe data input after the STB has fallen is processed as a command.When this pin is “HIGH”, CLK is ignored. Key Data input Pins5,6 K1,K2 GND The data sent to these pins are latched at the end of the displaycycle.(Internal Pull-Low Resistor)Ground Pin22,25,28 SEG1/KS1~ Segment Output Pins(p-channel, open drain) 8~17 Also acts as the Key Source SEG10/KS10 SEG12/GRID7 ~Segment/Grid Output Pins18~20 SEG14/GRID6VDD GRID1~GRID47,21 26,27, 23,24Power SupplyGrid Output Pins 3、ELECTRICAL PARAMETER3.1、 ABSOLUTE MAXIMUM RATINGS (Unless otherwise stated, Ta=25℃, GND=0V)Characteristic Supply Voltage Input Voltage Symbol V DD V I1 ConditionsValue -0.3 to +7 -0.3 to V DD Unit V V +0.3I O1 Grid +200 Drive output current mA I O2 segment-50 -40~+80 Operating Temperature Topr Tstg ℃ ℃ -65~+150 Storage Temperature Power Dissipation P D T L400 250mW ℃Soldering Temperature10s 3.2、RECOMMENDED OPERATING RANGE (Ta= -20℃~+70℃,GND=0V )Parameter Symbol UnitMin. Typ. 5 - Max.5.5 Logic supply voltage High-level input voltage Low-level input voltage V DD 30.7V DD 0 V V VV IH V DD V IL - 0.3V DD3/ 12733-11-I3.3、ELECTRICAL CHARACTERISTICS3.3.1 DC CHARACTERISTICS (Ta= -20℃~+70℃,V DD=4.5V~5.5V ,GND=0V)Parameter Symbol ConditionsSeg1/KS1~Seg10/KS10,V O=V DD-2VSeg1/KS1~Seg10/KS10,V O=V DD-3V Min. Typ. Max. UnitmAI OH1 -20 -25 -40 High-level outputcurrentI OH2I OL1 -20804-301408-50 mAmAmALow-level output currentLow-level output currentGrid1~Grid4,V O= 0.3VV O=0.4V, DIO-- I DATASegmentHigh-level output I TOLSG current tolerance V O=V DD-3V,Seg1/KS1~- - 5 % Seg10/KS10Input current High-level voltage Low-level voltageI I V I=V DD/GND - --±1 uAV inputinputV IH CLK、DIO、STB 0.7V DDV IL CLK、DIO、STBCLK、DIO、STBNo load , display off----0.35-0.3V DD VVHysteresis Voltage V H -Dynamic dissipation Pull-down Resistor currentI DD dyn 5-mA RL K1~K2 - 10 KΩ3.3.2 SWITCHING CHARACTERISTICS(Ta= -20℃~+70℃,V DD=4.5V~5.5V)Parameter Oscillation frequency Propagation delay Symbolf OSCConditions Min-Typ450Max-UnitKHz t PLZt PZLCLK→DIOCL=15pF, R L=10KΩ----300100nsnsSeg1/KS1~Seg10/KS10Grid1~Grid4T TZH1 - - 2 usRise Time CL=300pFT TZH2 T THZ ----0.5 ususFall Time CL=300pF、Segn、Gridn 120Maximum clock frequencyInput FmaxC IDuty=50%-1---- MHzpF15capacitance3.3.3 TIMING CHARACTERISTICS(Ta= -20℃~+70℃,V DD=4.5V~5.5V)Parameter SymbolPWCLKPWSTBt SETUP Conditions Min4001Typ Max UnitnsClock pulse width STB pulse width Set-up time for data Hold time for data Propagation delay CLK to STB------------μs100100ns t HOLD ns t CLK STBt WAITCLK↑→STB↑CLK↑→CLK↓11----μsμsWait time4/ 124、FUNCTION DESCRIPTION4.1、Switching characteristic waveform4.2、DISPLAY MODE AND RAM ADDRESSData transmitted from an external device to AIP1628 via the serial interface are stored in the DisplayRAM and are assigned addresses. The RAM addresses of AIP1628 are given below in 8 bits unit.xxHL(Lower 4bits) xxHU(Higher 4 bits) xxHL(Lower 4bits) xxHU(Higher 4 bits)B0 B1 B2 B3 B4 B5 B6 B7 B0 B1 B2 B3 B4 B5 B6 B7 00HL02HL04HL06HL08HL0AHL0CHL00HU 01HL 01HU DIG1DIG2DIG3DIG4DIG5DIG6DIG702HU04HU06HU08HU0AHU0CHU03HL05HL07HL09HL0BHL0DHL03HU05HU07HU09HU0BHU0DHU5/ 124.3、KEY MATRIX & KEY INPUT DATA STORAGE RAMKey Matrix consists of 10 x 2 array as shown below:Each data entered by each key is stored as follows and read by a READ Command, starting from the last significant bit. When the most significant bit of the data (b0) has been read, the least significant bit of the next data (b7) is read, b6 and b7 do not care.B0 K1B1K2B2XB3K1B4K2B5XB6B7KS1KS3KS5KS7KS9KS2KS4KS6KS8KS10BYTE1BYTE2BYTE3BYTE4BYTE50 04.4、COMMANDS DESCRIPTION在STB引脚从高电平变为低电平状态之后,命令是通过DIO引脚输入到AIP1628的第一个字节(b0至b7)。

AP2142SG-13;AP2152SG-13;AP2142MPG-13;AP2152MPG-13;中文规格书,Datasheet资料

AP2142SG-13;AP2152SG-13;AP2142MPG-13;AP2152MPG-13;中文规格书,Datasheet资料

Absolute Maximum Ratings
Symbol ESD HBM ESD MM VIN VOUT VEN , VFLG Iload TJmax TST
Notes:
Parameter Human Body Model ESD Protection Machine Model ESD Protection Input Voltage Output Voltage Enable Voltage Maximum Continuous Load Current Maximum Junction Temperature Storage Temperature Range (Note 3)
Applications
• • • Consumer electronics – LCD TV & Monitor, Game Machines Communications – Set-Top-Box, GPS, Smartphone Computing – Laptop, Desktop, Servers, Printers, Docking Station, HUB
Pin Name GND IN EN1 EN2 FLG2 OUT2 OUT1 FLG1
Descriptions
AP2142/AP2152 Rev. 5
2 of 17
FEBRUARY 2009
© Diodes Incorporated
/
AP2142/AP2152
Pin Number 1 2 3 4 5 6 7 8 Ground Voltage input pin Switch 1 enable input, active low (AP2142) or active high (AP2152) Switch 2 enable input, active low (AP2142) or active high (AP2152) Switch 2 over-current and over-temperature fault report; open-drain flag is active low when triggered Switch 2 voltage output pin Switch 1 voltage output pin Switch 1 over-current and over-temperature fault report; open-drain flag is active low when triggered

EG2124A 芯片数据手册说明书

EG2124A 芯片数据手册说明书

版本变更记录目录1. 特性 (1)2. 描述 (1)3. 应用领域 (1)4. 引脚 (2)4.1 引脚定义 (2)4.2 引脚描述 (3)5. 结构框图 (4)6. 典型应用电路 (5)7. 电气特性 (5)7.1 极限参数 (5)7.2 典型参数 (6)7.3 开关时间特性及死区时间波形图 (8)8. 应用设计 (8)8.1 VCC端电源电压 (8)8.2 输入逻辑信号要求和输出驱动器特性 (8)8.3 自举电路 (10)9. 封装尺寸 (11)9.1 TSSOP20封装尺寸 (11)9.2 QFN24封装尺寸 (12)EG2124A芯片数据手册V1.01. 特性◼高端悬浮自举电源设计,耐压可达260V◼集成三路独立半桥驱动◼适应5V、3.3V输入电压◼最高频率支持500KHZ◼低端VCC电压范围7V-20V◼输出电流能力IO +0.8A/-1.2A◼VCC和VB带欠压保护◼内建死区控制电路◼自带闭锁功能,彻底杜绝上、下管输出同时导通◼HIN输入通道高电平有效,控制高端HO输出◼LIN输入通道高电平有效,控制低端LO输出◼封装形式:TSSOP20和QFN24◼无铅无卤符合RHOS标准2. 描述EG2124A是一款高性价比的大功率MOS管、IGBT管栅极驱动专用芯片,内部集成了逻辑信号输入处理电路、死区时控制电路、欠压保护电路、闭锁电路、电平位移电路、脉冲滤波电路及输出驱动电路。

EG2124A高端的工作电压可达260V,低端VCC的电源电压范围宽7V~20V。

该芯片具有闭锁功能防止输出功率管同时导通,输入通道HIN和LIN 内建了下拉电阻,在输入悬空时使上、下功率MOS管处于关闭状态,输出电流能力IO +0.8A/-1.2A,采用TSSOP20和QFN24封装。

3. 应用领域◼三相直流无刷电机驱动器4. 引脚4.1 引脚定义图4-1. EG2124A管脚定义图4-2. EG2124管脚定义4.2 引脚描述5. 结构框图VB1HO1VS1VCCLO1VB2HO2VS2LO2VB3HO3VS3LO3GND图5-1. EG2124A内部电路图6. 典型应用电路图6-1. EG2124A典型应用电路图7. 电气特性7.1 极限参数7.2 典型参数无另外说明,在T A=25℃,Vcc=12V,负载电容C L=1nF条件下7.3 开关时间特性及死区时间波形图图7-1. 低端输出LO 开关时间波形图图7-2. 高端输出HO 开关时间波形图50%50%LOH INLINHO 50%50%图7-3. 死区时间波形图8. 应用设计8.1 VCC 端电源电压针对不同的MOS 管,选择不同的驱动电压,开启MOS 管推荐电源VCC 工作电压典型值为7V-15V 。

SSM2142中文资料

SSM2142中文资料

Balanced Line Driver SSM2142
FUNCTIONAL BLOCK DIAGRAM
VIN
50Ω +OUT FORCE
10kΩ
+OUT SENSE – OUT SENSE
ALL RESISTORS 30kΩ UNLESS OTHERWISE INDICATED
GND
50Ω – OUT FORCE
RATIO STATIC OUTPUT COMMON-MODE REJECTION OUTPUT SIGNAL BALANCE RATIO TOTAL HARMONIC DISTORTION
Plus Noise
SIGNAL-TO-NOISE RATIO HEADROOM SLEW RATE OUTPUT COMMON-MODE
VOLTAGE OFFSET1 DIFFERENTIAL OUTPUT
VOLTAGE OFFSET DIFFERENTIAL OUTPUT
VOLTAGE SWING OUTPUT IMPEDANCE SUPPLY CURRENT OUTPUT CURRENT, SHORT CIRCUIT
ZIN
IIN
Based on a cross-coupled, electronically balanced topology, the SSM2142 mimics the performance of fully balanced transformer-based solutions for line driving. However, the SSM2142 maintains lower distortion and occupies much less board space than transformers while achieving comparable common-mode rejection performance with reduced parts count.

TOPSWITCH 242芯片在旅行充电器开关电路中的应用

TOPSWITCH 242芯片在旅行充电器开关电路中的应用

TOPSWITCH 242芯片在旅行充电器开关电路中的应用肖已文【摘要】TOPSWITCH 242保护芯片在旅行充电器中的应用,有效的增加了产品的使用性能和安全性能,通过传统开关电路和带TOPSWITCH 242保护芯片的电路对比,阐释了新型开关电路的优势.【期刊名称】《电子制作》【年(卷),期】2015(000)017【总页数】3页(P56-57,64)【关键词】OPSWITCH 242;旅行充电器;安全【作者】肖已文【作者单位】苏州UL美华认证有限公司【正文语种】中文引言随着电子产品的的功能越来越强大,普及率也越来越高,便携式电子产品的应用逐渐渗透在我们的日常生活当中,由于是便携式设备,其电力的来源都是电池,这也是这两年电池作为新能源得到井喷式发展的原因。

同样,和电池配对的,旅行充电器的开关电源,也有无限的前景。

随着人们对安全,环境,能源意识理念的不断提高,对旅行充电器开关电源的设计也越来越高,不能仅仅满足在能充电,而且,充电要安全,节能,不污染。

因此,有必要对充电电路进行革新,以满足工业发展和大众生活的需要。

常规低功率开关电路的设计一直以来,对于10W 左右的低功率旅行充电器,其设计也可谓成熟,下面是它的典型设计电路模型。

鉴于目前的设计都是使用开关电路,这里只对保护电路做阐述。

图1 常规低功率开关电路的设计图中的保护器件有MOS 管,芯片IC 和敏感电阻Rs。

做如下模拟失效来验证电路的可靠性。

1.短路敏感电阻Rs。

通常这个电阻都在10 欧以内。

当Rs短路时,Q管的电压升高,IC过压保护。

电路输出切断。

保证产品的使用者安全。

2.短路MOS 管的D 脚和S 脚。

高电压直接引入到地端,MOS 管因为承受不了这么大电压,直接烧毁。

电路失效,旅行充电器烧毁。

上面电路的设计,有效的做到了产品使用者的安全使用性,但在性能方面有缺陷。

其中,最大的缺陷就是产品如果运用不当,产品会直接坏掉,给使用者带来极大的麻烦。

TLE2142AIDR中文资料

TLE2142AIDR中文资料

0°C to 70°C −40°C to 105°C −55°C to 125°C
† The D packages are available taped and reeled. Add R suffix to device type (e.g., TLE2141ACDR). TLE2142 AVAILABLE OPTIONS PACKAGED DEVICES TA VIOmax AT 25°C 750 µV 1200 µV 750 µV 1200 µV 750 µV SMALL OUTLINE† (D) TLE2142ACD TLE2142CD TLE2142AID TLE2142ID TLE2142AMD CHIP CARRIER (FK) — — — — TLE2142AMFK CERAMIC DIP (JG) — — — — TLE2142AMJG PLASTIC DIP (P) TLE2142ACP TLE2142CP TLC2142AIP TLC2142IP — TSSOP‡ (PW) — TLE2142CPWLE — — — CERAMIC FLAT PACK (U) — — — — TLE2142AMU TLE2142MU
元器件交易网
TLE214x, TLE214xA EXCALIBUR LOW NOISE HIGH SPEED PRECISION OPERATIONAL AMPLIFIERS
SLOS183C − FEBRUARY 1997 − REVISED JUNE 2006
D Low Noise D D D D D
TLE214x, TLE214xA EXCALIBUR LOW NOISE HIGH SPEED PRECISION OPERATIONAL AMPLIFIERS

AQV214EA中文资料

AQV214EA中文资料

Cout
A
Off state leakage current
Maximum


Switching
Turn on time*
Typical Maximum
Ton

Transfer
speed
Turn off time*
Typical Maximum
Toff

characteristics I/O capacitance
Input
Item LED operate current LED turn off current LED dropout voltage
Typical Maximum Minimum Typical Typical Maximum
Symbol IFon
IFoff
VF
Type of connec-
3.9±0.2 .154±.008
8.8±0.05 .346±.002
6.4±0.05 .252±.002
3.6±0.2 .142±.008
mm inch
1
6
2
5
3
4
FEATURES
1. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset voltage to enable control of low-level analog signals without distortion.
Load
Load
voltage current
Through hole terminal

SW-214中文资料

SW-214中文资料

GaAs SPST Switch DC - 3 GHzSW-214M/A-COM, Inc.1Specifications Subject to Change Without Notice.V2.00FP-13Pin ConfigurationPIN 3(3.17)0.015 DIA ±0.005 (0.38 ±0.13) 6 PLACESFeaturesFast Switching Speed, 6 ns Typical Ultra Low DC Power Consumption TerminatedGuaranteed Specifications*(From -55°C to +85°C)Frequency Range DC-3 GHz Insertion LossDC-3 GHz 1.3dB Max DC-2 GHz 1.2dB Max DC-1 GHz 0.9dB Max DC-0.5 GHz 0.9dB MaxVSWRDC-3 GHz 2.0:1Max DC-2 GHz 1.7:1Max DC-1 GHz 1.3:1Max DC-0.5 GHz 1.3:1Max IsolationDC-3 GHz 25dB Min DC-2 GHz 38dB Min DC-1 GHz 45dB Min DC-0.5 GHz50dB MinOperating CharacteristicsImpedance 50 Ohms Nominal Switching Characteristics†t RISE, t FALL 3 ns Typ t ON, t OFF (50% CTL to 90/10%RF) 6 ns Typ Transients (In-Band)30 mV Typ Input Power for 1 dB CompressionControl Voltages (Vdc)0/-50/-80.5-3 GHz +27+33dBm Typ 0.05 GHz +21+26dBm Typ Intermodulation Intercept Point(for two-tone input power up to +13 dBm)Intercept Points IP 2IP 30.5-3 GHz +68+46dBm Typ 0.05 GHz +62+40dBm Typ Control Voltages (Complementary Logic)V IN Low 0 to -0.2V @ 20 µA Max V IN Hi -5V @ 50 µA Typ to -8V @ 300 µA Max EnvironmentalMIL-STD-883 screening available.* All specifications apply with 50 ohm impedance connected to all RF ports with 0 and -5 VDC control voltages.† Faster switching speed can be achieved with enhanced driver waveform.Ordering InformationModel No.Package SW-214PINFlatpackq q qControl Input Condition of SwitchA B RF1 to RF2Hi Low ON Low HiOFFTruth TableDimensions in ( ) are in mm.Unless Otherwise Noted: .xxx = ±0.010 (.xx = ±0.25).xx = ±0.02 (.x = ±0.5)WEIGHT (APPROX.): 0.03 OUNCES 0.8 GRAMS元器件交易网GaAs SPST SwitchSW-214V2.00M/A-COM, Inc.2Specifications Subject to Change Without Notice.Typical Performance0123元器件交易网。

【2019年整理】TinySwitch-II系列第二代微型单片开关电源的原理

【2019年整理】TinySwitch-II系列第二代微型单片开关电源的原理

TinySwitch II系列第二代微型单片开关电源的原理TinySwitch II系列是美国PI(PowerIntegrations)公司继TinySwitch之后,于2001年3月新推出的第二代增强型隔离式微型单片开关电源集成电路。

该系列产品包括TNY264P/G、TNY266P/G~TNY268P/G,共8种型号。

它特别适合制作高效率、低成本、微型化的小功率开关电源,例如手机电池充电器、PC机待机电源、彩色电视机待机电源、交流电源适配器、电机控制器以及ISDN或DSL网络终端,是体积大、效率低的线性稳压电源理想的替代品。

1TinySwitch II系列的产品分类及性能特点1.1产品分类产品分类见表1表1TinySwitch II系列产品的分类及最大连续输出功率POM1.2性能特点与第一代产品TinySwitch(TNY253~TNY255)相比,它除了保留结构简单、使用方便等优点之外,还具有以下显著特点:(1)在增加输出功率的同时,降低了芯片的功耗,使电源效率得到进一步提高。

当交流输入电压达到最大值265V,空载时芯片的功耗一般低于50mW。

TinySwitch 系列产品的最大输出功率为10W (TNY255P /G 型),TinySwitch II 系列产品则提高到23W (TNY268P /G 型)。

开关频率也从44kHz 提高到132kHz ,这不仅能提高电源转换效率,还允许使用低价格、小尺寸的EE13或EF12.6型磁芯,减小高频变压器的体积。

(2)增加了自动重启动计数器、极限电流状态机和输入欠压检测电路。

利用一只检测电阻来设定输入电压的欠压阈值,消除了在待机电源等应用中因输入滤波电容缓慢放电而引起的电源掉电故障。

一旦发生输出短路、控制环开路或者掉电故障,均能保护芯片不受损坏。

表2TinySwitch II 与TinySwich 的性能比较 功能 TinySwitchTNY254 TinySwitch ⅡTNY264、266~268TinySwitch Ⅱ的优点 开关频率44kHz±10% 132kHz±6% ①减小高频变压器的体积②提高开关电源的效率③改善稳压性能④降低开关电源成本 开关频率的温漂误差+8% +2% 开关频率抖动量—— ±4kHz ①抑制电磁干扰②降低滤波元件成本 对由高频变压器产生的音频噪声进行衰减—— 有 有效滤除浸漆变压器的音频噪声,变压器无须采用特殊结构或胶合剂 输入欠压检测 —— 用一只电阻设定欠压阈值UUV ①保护功能更加完善②能抑制开/关噪声漏极极限电流的偏差±9.8%(25℃) ±6.8%(25℃)①提高输出功率②简化了大批量生产的制造工艺在0~100℃范围内极限电流的温漂-8%0%自动重启动——有①限制了短路输出电流,使之小于满载电流②当控制环路出现开环故障时,能对负载起到保护作用③外围电路中无须再增加元件旁路端的电压钳位保护——内部设有钳位用的6.3V稳压管允许器件从初级辅助绕组获得能量,降低了芯片的功耗所用封装的漏极防漏电距离0.94mm 3.48mm防止D S管脚之间因落有灰尘、杂物而造成高压漏电图1TinySwitch II的引脚排列(3)将TinySwitch的使能端(EN)改为双功能引出端“使能/欠压端”(EN/UV)。

DO-214AC中文资料

DO-214AC中文资料

5.10 5.60 0.201 0.220
4.05 4.60 0.159 0.181
3.30 3.95 0.130 0.156
0.75 1.60 0.030 0.063
2.3
1.52
2.75
1.52
Ordering type Marking
STPS1L30U
G23
STPS1L30A
GB3
Band indicates cathode Epoxy meets UL94,V0
SMA STPS1L30A JEDEC DO-214AC
SMB STPS1L30U JEDEC DO-214AA
DESCRIPTION
Single Schottky rectifier suited to Switched Mode Power Supplies and high frequency DC to DC converters, freewheel diode and integrated circuit latch up protection.
8
6
4
2
IM
t
δ=0.5
0 1E-3
1E-2
t(s) 1E-1
Ta=25°C Ta=50°C Ta=100°C
1E+0
Fig. 2: Average forward current versus ambient temperature (δ=0.5).
IF(av)(A) 1.2 1.0 0.8 0.6
IR(mA) 1E+2
1E+1
1E+0
1E-1
1E-2
1E-3
0
5
Tj=150°C Tj=125°C Tj=100°C

TLE2144CN资料

TLE2144CN资料
元器件交易网
TLE214x, TLE214xA EXCALIBUR LOW NOISE HIGH SPEED PRECISION OPERATIONAL AMPLIFIERS
SLOS183C − FEBRUARY 1997 − REVISED JUNE 2006
D Low Noise D D D D D
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
0°C to 70°C −40°C to 105°C −55°C to 125°C
1200 µV TLE2142MD TLE2142MFK TLE2142MJG — — † The D packages are available taped and reeled. Add R suffix to device type (e.g., TLC2142ACDR). ‡ The PW packages are available left-ended taped and reeled. Add LE the suffix to device type (e.g., TLC2142CPWLE). TLE2144 AVAILABLE OPTIONS PACKAGED DEVICES TA VIOmax AT 25°C 1.5 mV 2.4 mV 1.5 mV 2.4 mV 1.5 mV 2.5 mV SMALL OUTLINE† (DW) — TLE2144CDW — TLE2144IDW — TLE2144MDW CHIP CARRIER (FK) — — — — TLE2144AMFK TLE2144MFK CERAMIC DIP (J) — — — — TLE2144AMJ TLE2144MJ

AiP74HC244中文资料

AiP74HC244中文资料

新制/修订内容
新制
江苏省无锡市蠡园经济开发区滴翠路 100 号 9 栋 2 层
http://www.i-core. cn
邮编:214072
第 1 页 共 12 页 版本:2012-02-A1
表 733-11-I
无锡中微爱芯电子有限公司
Wuxi I-CORE Electronics Co., Ltd. 编号:AiP74HC244-AX-BJs Co., Ltd. 编号:AiP74HC244-AX-BJ-168
3、电特性
3.1、极限参数 (符合 IEC 60134 标准, GND=0)
参数名称
符号
条件
最小 最大 单位
电源电压
VCC
-0.5
+7.0
V
输入钳位电流
Ilk
VI<-0.5V orVI>Vcc+0.5V
最小 1.5 3.15 4.2 - - - 1.9 4.4 5.9 3.84 5.34 - - - -
典型 - - - - - - - - - - - - - - -
最大 - - - 0.5 1.35 1.8 - - - - - 0.1 0.1 0.1 0.33
单位 V V V V V V V V V V V V V V V
2.3、引脚说明
引脚 符 号
1
1 OE
2
1A0
3
2Y0
4
1A1
5
2Y2
6
1A2
7
2Y2
8
1A3
9
2Y3
10
GND
2.4、真值表 控制
n OE
L
i-core 图2、引脚排列图

INA214AIRSWT;中文规格书,Datasheet资料

INA214AIRSWT;中文规格书,Datasheet资料

Reference Voltage
Supply
RSHUNT
Load
REF GND
INA21x
OUT
R1
R3 IN-
Output
+2.7V to +26V
V+
CBYPASS 0.01mF
to
0.1mF
R2 SC70
IN+ R4
PRODUCT
INA210 INA211 INA212 INA213 INA214
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
2
Copyright © 2008–2012, Texas Instruments Incorporated
/
INA210, INA211 INA212, INA213
INA214

ELECTRICAL CHARACTERISTICS
SBOS437C – MAY 2008 – REVISED AUGUST 2012
Boldface limits apply over the specified temperature range, TA = –40°C to +125°C. At TA = +25°C, VSENSE = VIN+ – VIN–. INA210, INA213, and INA214: VS = +5V, VIN+ = 12V, and VREF = VS/2, unless otherwise noted. INA211 and INA212: VS = +12V, VIN+ = 12V, and VREF = VS/2, unless otherwise noted.

常用开关电源芯片资料

常用开关电源芯片资料

常用开关电源芯片资料2021-10-1408:49:00|分类:【电子元件及应用|字号大中小订阅一、 P1014ap06tny267p可以互换。

常用于计算机电源、卫星接收机电源(ncp1010~1014)。

1针反馈电源2378接地4针光耦4针5针开关变压器输入6针无此类针。

2.Fsd200fsd210不能互换。

它常用于接收器电源、电磁炉电源8脚300v7脚开关变压器来电端6脚无此脚5反馈供电4脚光耦4脚123脚光耦3脚与接地三、 Viper12aviper22a可互换,常用于电磁炉电源、DVD播放机电源、12地、3光耦、3针、4光耦、4针、5678开关变压器输入电源、4针。

天成数字卫星接收机dh3211引脚负极,2引脚正反馈电源,3个光耦,4引脚,4个负5电阻,启动电阻678正极五、dvdvcd开关电源5m02659r026503801空2地3小电源4光耦5空678电源tda16833(1234)1,3.6为空2fb45d7vcc8gnd5m0265和5m02659r一样一个循序渐进的VCD电源使用5l0265,我使用5l0380代替机器维修!!!5l0380可以替换5l02655l0380 5m02659r1=1(连接1和2个电路)2=73=34=4im0280替换为im03808脚ic似乎是02659的引脚,用5l0380代换dm0265r应该是1=1,2=78,3=2,4=32a0165、2a0265、2a0565都可用5l0380r(四脚)代用,方法如下:5l0380r的针脚1连接到2a0265的针脚8,针脚2连接到针脚4和5,针脚3连接到针脚7,针脚4连接到针脚2。

我用这种方法修理了三四十台,既可靠又实用。

在有的机上,原机无启动电阻,你可在5l0380的3脚与300v间加一只120k/2w(180~300k)的电阻,不然就会不启动。

或者直接从交流引47k电阻Dm0265可以被dm0365取代,dm0365封装为8针。

微机继电保护的主要芯片介绍

微机继电保护的主要芯片介绍
SPC和队列QUEUE • U6——端口3(P3)和端口4(P4)
第13页,共51页。
• U7——总线交换协议与端口1(P1) • U8——高速输入输出通道 • U9——定时器单元 • U10——串行通信单元 • U11——D/A转换单元 • U12——端口2(P2)多路转换器 • U13——端口0 (P0) 和端口2 (P2) • U14——A/D转换单元
第24页,共51页。
• 早期应用于电力系统的微机保护产品采 用的CPU大多为8位或16位单片机,由于受 硬件资源及功能较简单的限制,微机产品的 优势难以充分发挥,其采样能力及采样精度 上无法满足一些复杂的原理和算法的要求, 基于常规CPU的保护产品也都难以胜任。基 于DSP的数据采集和处理系统由于其强大的 数学运算能力和特殊设计,使得它在继电保 护各种原理的实现上得心应手。
第25页,共51页。

对于正常运行状态下的电力系统,主要是对稳态下
的基波和谐波进行分析,傅里叶变换是一个十分有效的
工具。但有些保护功能需要提取和识别电力系统故障信
息,如行波和超高速保护、小电流接地选线等傅里叶变
换就显得无能为力,必须用到更高级的DSP算法,例如
20世纪90年代兴起的一种称为小波变换的分析方法。
LPC2214,是一款基于16/32位ARM7TDMI—S,并
支持实时仿真和跟踪的CPU,带有128/256KB嵌入的
高速Flash存储器。128位宽度的存储器接口和独特的
加速结构使32位代码能够在最大时钟速率下运行。可
使用16位Thumb模式将代码规模降低超过30%,而性
能的损失却很小。

下图为LPC2212/LPC2214的结构方框图:
一个8通道的多路开关,一个具有14位分辨率的A/D转换
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description
The TLE214x and TLE214xA devices are high-performance, internally compensated operational amplifiers built using Texas Instruments complementary bipolar Excalibur process. The TLE214xA is a tighter offset voltage grade of the TLE214x. Both are pin-compatible upgrades to standard industry products. The design incorporates an input stage that simultaneously achieves low audio-band noise of 10.5 nV/√Hz with a 10-Hz 1/f corner and symmetrical 40-V/µs slew rate typically with loads up to 800 pF. The resulting low distortion and high power bandwidth are important in high-fidelity audio applications. A fast settling time of 340 ns to 0.1% of a 10-V step with a 2-kΩ/100-pF load is useful in fast actuator/positioning drivers. Under similar test conditions, settling time to 0.01% is 400 ns. The devices are stable with capacitive loads up to 10 nF, although the 6-MHz bandwidth decreases to 1.8 MHz at this high loading level. As such, the TLE214x and TLE214xA are useful for low-droop sample-and-holds and direct buffering of long cables, including 4-mA to 20-mA current loops. The special design also exhibits an improved insensitivity to inherent integrated circuit component mismatches as is evidenced by a 500-µV maximum offset voltage and 1.7-µV/°C typical drift. Minimum common-mode rejection ratio and supply-voltage rejection ratio are 85 dB and 90 dB, respectively. Device performance is relatively independent of supply voltage over the ± 2-V to ± 22-V range. Inputs can operate between VCC − − 0.3 to VCC + − 1.8 V without inducing phase reversal, although excessive input current may flow out of each input exceeding the lower common-mode input range. The all-npn output stage provides a nearly rail-to-rail output swing of VCC − − 0.1 to VCC + − 1 V under light current-loading conditions. The device can sustain shorts to either supply since output current is internally limited, but care must be taken to ensure that maximum package power dissipation is not exceeded. Both versions can also be used as comparators. Differential inputs of VCC ± can be maintained without damage to the device. Open-loop propagation delay with TTL supply levels is typically 200 ns. This gives a good indication as to output stage saturation recovery when the device is driven beyond the limits of recommended output swing. Both the TLE214x and TLE214xA are available in a wide variety of packages, including both the industry-standard 8-pin small-outline version and chip form for high-density system applications. The C-suffix devices are characterized for operation from 0°C to 70°C, I-suffix devices from − 40°C to 105°C, and M-suffix devices over the full military temperature range of − 55°C to 125°C.
TLE214x, TLE214xA EXCALIBUR LOW NOISE HIGH SPEED PRECISION OPERATIONAL AMPLIFIERS
TLE2141 AVAILABLE OPTIONS PACKAGED DEVICES TA VIOmax AT 25°C 500 µV 900 µV 500 µV 900 µV 500 µV 900 µV SMALL OUTLINE† (D) TLE2141ACD TLE2141CD TLE2141AID TLE2141ID — TLE2141MD CERAMIC DIP (JG) — — TLE2141AMJG TLE2141MJG PLASTIC DIP (P) TLE2141ACP TLE2141CP TLE2141AIP TLE2141IP — —
Copyright 1997 − 2006, Texas Instruments Incorporated
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
1元Leabharlann 件交易网SLOS183C − FEBRUARY 1997 − REVISED JUNE 2006
0°C to 70°C −40°C to 105°C −55°C to 125°C
1200 µV TLE2142MD TLE2142MFK TLE2142MJG — — † The D packages are available taped and reeled. Add R suffix to device type (e.g., TLC2142ACDR). ‡ The PW packages are available left-ended taped and reeled. Add LE the suffix to device type (e.g., TLC2142CPWLE). TLE2144 AVAILABLE OPTIONS PACKAGED DEVICES TA VIOmax AT 25°C 1.5 mV 2.4 mV 1.5 mV 2.4 mV 1.5 mV 2.5 mV SMALL OUTLINE† (DW) — TLE2144CDW — TLE2144IDW — TLE2144MDW CHIP CARRIER (FK) — — — — TLE2144AMFK TLE2144MFK CERAMIC DIP (J) — — — — TLE2144AMJ TLE2144MJ
元器件交易网
TLE214x, TLE214xA EXCALIBUR LOW NOISE HIGH SPEED PRECISION OPERATIONAL AMPLIFIERS
SLOS183C − FEBRUARY 1997 − REVISED JUNE 2006
D Low Noise D D D D D
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
10 Hz . . . 15 nV/√Hz 1 kHz . . . 10.5 nV/√Hz 10 000-pF Load Capability 20-mA Min Short-Circuit Output Current 27-V/µs Min Slew Rate High Gain-Bandwidth Product . . . 5.9 MHz Low VIO . . . 500 µV Max at 25°C
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