DMN601TK-7;中文规格书,Datasheet资料

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数据手册_HR7P187_Datasheet_C V2.1

加强描述：3.2.3，5.1.4，6.1.3，6.5.1，6.5.2，附录 1.1，附录 2.1，附录 2.2
错误修正：2.1，2.2，4.3，5.1.1.1，5.1.1.2，5.1.2.1， 5.1.2.2，5.4.3，附录 1.3，附录 1.4
V2.1 版权所有©上海海尔集成电路有限公司
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V2.1 版权所有©上海海尔集成电路有限公司
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上海海尔集成电路有限公司
HR7P187 数据手册
版本 V1.0 V2.0
V2.1
修改日期 2010-08-02 2011-03-11
2011-04-26
修订历史
预发行版
更改概要
添加内部时钟电气特性及部分补充说明
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上海海尔集成电路有限公司
HR7P187 数据手册
产品订购信息
型号
程序存储器
HR7P187F4R HR7P187F4R-B
HR7P187F4D HR7P187F4D-B FLASH：2K×15 位
HR7P187F4S HR7P187F4S-B
数据存储器
版权所有©
上海海尔集成电路有限公司
本数据手册的信息在发行时是经过核实并且尽最大努力使之精确的。上海海尔集成电路有限公司不为由于使用本数据手册而可能带来的风险或后果负责。手册中的实例仅作为说明用途，上海海尔集成电路有限公司不担保或确认这些实例是合适的、不需进一步修改的、或推荐使用的。上海海尔集成电路有限公司保留不需要通知本数据手册读者而修改自己产品的权利。如需得到最新的产品信息，请随时用上述联系方式与上海海尔集成电路有限公司联系。
上海海尔集成电路有限公司
HR7P187 数据手册

深圳市科特翎科技有限公司产品规格书说明书

产品规格书SPECIFICATION产品名称N ame.NO：0805白光White产品型号Model.NO：KTR-0805CWD文件编号Document.NO：MQ8032版次REV.NO：K3.0描述Description:■ 2.0×1.25mm贴片发光二极管2.0×1.25mm Chip SMD ■胶体颜色Colloid Color:黄色Yellow■发光颜色Emission Color:白色White■半功率角度Viewing Angle:120°深圳市科特翎科技有限公司SHENZHEN KETERINE TECHNOLOGY CO.,LTD.编制Prepared by审核Checked by核准Approved by市场部Market Dept.客户确认CUSTOMER CONFIRMATION确认Confirmed by审核Checked by核准Approved by确认Confirmed by1.外形尺寸Dimensions单位(Units):毫米(mm)注意:所有尺寸单位为mm，如无特殊说明误差范围为±0.1mmAll dimensions area in mm tolerance is±0.1mm unless otherwise noted.2.光电特性Electrical/Optical characteristics (1)最大限度值Absolute Maximum Ratings(TA=25±5ºC)项目Item符号Symbol最大额定值Absolute Maximum Rating单位Unit正向电流Forward Current IF20mA正向峰值电流Pulse Forward Current IFP100mA反向电压Reverse Voltage VR5V功率消耗Power Dissipation PD70mW工作温度Operating Temperature Topr-40ºC To+85ºC°C贮藏温度Storage Temperature Tstg-40ºC To+85ºC°C焊接温度Soldering Temperature Tsld ReflowSoldering:260ºC For10sec. 1/10周期,0.1msec脉宽IFP Conditions:1/10Duty Cycle,0.1msec Pulse Width.(2)样品光电参数Initial Electrical/Optical Characteristics(TA=25±5ºC)符号Symbol 项目Item单位Units最小值Min.规格值Typ.最大值Max.测试条件TestConditionsVF正向电压Forward Voltage V 2.6 3.2IF=10mAIR反向电流Reverse Current uA10VR=7V2θ½发光角度Viewing Angleº120ºIF=10mAø发光强度Luminous Intensitymcd6001080IF=10mATC色温Colour Temperature k700011000IF=10mARA显色指数Color Rendering Index Ra7080IF=10mA 正向电压允许误差±0.05V Tolerance of measurement of Vf is±0.05V.亮度允许误差±10%Luminous Intensity Measurement allowance is±10%.3.特性曲线Characteristic curve4.可靠性RELIABILITY (1)测试项目及结果Test Items and Results实验项目Test Items 参考标准Reference实验条件Test Conditions时间Time样品数Quantity判据Criterion冷热冲击Thermal Shock MIL-STD-202G-40℃(30min)←→100℃(30min)循环200次200cycles220/22湿热循环Temperature And Humidity Cyclic JEITA ED-4701200203-10℃——+65℃，0%-90%RH24hrs./1cycle循环10次10cycles220/22高温储存High Temperature Storage JEITA ED-4701200201Ta=100℃1000h220/22低温储存Low Temperature Storage JEITA ED-4701200202Ta=-40℃1000h220/22高温高湿储存High Temperature High Humidity Storage JEITA ED-4701100103Ta=60℃，RH=90%1000h220/22常温寿命试验Life Test JESD22-A108D Ta=25℃IF=20mA1000h220/22高温寿命High Temperature Life Test JESD22-A108D Ta=80℃IF=20mA1000h220/22低温寿命Low Temperature Life Test JESD22-A108D Ta=-40℃IF=20mA1000h220/22耐焊接热Resistance to Soldering Heat GB/T4937,Ⅱ,2.2&2.3Tsol*=260℃10secs.2次2times220/225.注意事项Cautions（1）焊接条件Soldering Conditions本产品最多只可回焊两次,且在首次回焊后须冷却至室温之后方可进行第二次回焊。

NC601系列产品说明书

北京浦特伟业科技有限公司地址：北京市昌平区黄平路 19 号院龙旗广场 2 号楼 816 室电话：82666020/88840664/8266055 传真：010-82669890 EMAIL：sales@ 24 小时服务热线：13911070077
1
北京浦特伟业科技有限公司
目录
一．NC601 系列串口服务器简介 ..................................................................................................................... 4 1.1 概述 .................................................................................................................................................... 4 1.2 产品特性： ......................................................................................................................................... 5 1.3 硬件规格和尺寸： .............................................................................................................................. 5 1.4 硬件安装： ......................................................................................................................................... 6

DMN4060SVT-7;中文规格书,Datasheet资料

Month Code
2011 Y
Jan
Feb
1
2
2012 Z
Mar 3
2013 A
Apr
May
45Biblioteka 2014 BJun
Jul
6
7
2015 C
Aug
Sep
8
9
2016 D
Oct O
2017 E
Nov
Dec
N
D
DMN4060SVT
http://onDeocicum.ceonmt n/umber: DS35702 Rev. 2 - 2
Units
W
°C/W °C/W
W
°C/W °C/W °C/W
°C
P(PK), PEAK TRANSIENT POIWER (W)
100 80 60
Single Pulse RθJA = 72°C/W RθJA(t) = r(t) * RθJA TJ - TA = P * RθJA(t)
40
20
0 0.0001 0.001 0.01 0.1 1 10 100 1,000
Source
Equivalent Circuit
Ordering Information (Note 3)
Notes:
Part Number DMN4060SVT-7
Case TSOT26
Packaging 3,000/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free. 2. Diodes Inc.’s “Green” policy can be found on our website at . 3. For packaging details, go to our website at .

德恩科电机BG系列无刷直流电机产品说明书

D I NE N I S O9001:2000D I N EN I S O 14001Foreword / 前言To Our Valued Customers,Alcatel-Lucent Dunkermotoren is a world class leader in high quality motion control solutions to meet the ever increasing demands for cost effective and reliable drive solutions.Our comprehensive product range offers the flexibilityto provide customized solutions as well as standardized components.The catalog represents Dunkermotoren´s years of engineering excellence.The Dunkermotoren Team will continue to utilize our outstanding engineering and industrial capabilities to meet the requirements helping you to succeed.Wishing you great success in your business.Nikolaus GräfGeneral Manager 致我们尊敬的客户,阿尔卡特-朗讯旗下的德恩科电机是世界一流的运动控制领域的领先制造商,它提供的优质的传动控制解决方案，满足了客户对成本和可靠性日益增长的的需求。

我们的产品范围包括各种类型的产品,因此具有灵活性；除了提供标准化的部件,还提供用户化的解决方案。

DMN2004DWK-7;中文规格书,Datasheet资料

Features• Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 1) • ESD Protected up to 2KV • "Green" Device (Note 2) • Qualified to AEC-Q101 standards for High ReliabilityMechanical Data• Case: SOT363 • Case Material: Molded Plastic, “Green” MoldingCompound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminal Connections: See Diagram • Terminals: Finish - Matte Tin annealed over Alloy 42leadframe. Solderable per MIL-STD-202, Method 208 • Weight: 0.006 grams (approximate)Ordering Information (Note 3)Part Number Case Packaging DMN2004DWK-7SOT363 3000/Tape & ReelNotes: 1. No purposefully added lead.2. Diodes Inc.’s “Green” policy can be found on our website at .3. For packaging details, go to our website at .Marking InformationDate Code KeyYear 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 Code T U V W X Y Z A B C D EMonth Jan Feb Mar Apr MayJun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O NDSOT363Top ViewTop ViewInternal SchematicNAB = Marking Code YM = Date Code Marking Y = Year (ex: T = 2006) M = Month (ex: 9 = September) ESD PROTECTED TO 2kVNAB YM N A B Y MMaximum Ratings @T A = 25°C unless otherwise specifiedCharacteristic Symbol Value UnitsDrain-Source Voltage V DSS20 V Gate-Source VoltageV GSS±8 V Drain Current (Note 4)SteadyStateT A = 25°C T A = 85°CI D 540 390mAPulsed Drain Current (Note 5) I DM1.5 AThermal Characteristics @T A = 25°C unless otherwise specifiedCharacteristic Symbol Value UnitsTotal Power Dissipation (Note 4) P D 200 mW Thermal Resistance, Junction to Ambient R θJA 625 °C/W Operating and Storage Temperature Range T J, T STG -65 to +150 °CElectrical Characteristics @T A = 25°C unless otherwise specifiedCharacteristic Symbol Min Typ Max Unit Test ConditionOFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BV DSS 20 ⎯ ⎯ V V GS = 0V, I D = 10μA Zero Gate Voltage Drain Current I DSS ⎯ ⎯ 1 μA V DS = 16V, V GS= 0V Gate-Source Leakage I GSS ⎯ ⎯ ±1 μA V GS = ±4.5V, V DS = 0V ON CHARACTERISTICS (Note 6)Gate Threshold Voltage V GS(th)0.5 ⎯ 1.0 V V DS = V GS , I D = 250μA Static Drain-Source On-Resistance R DS (ON)⎯ 0.4 0.5 0.7 0.550.70 0.9 Ω V GS = 4.5V, I D = 540mA VGS = 2.5V, I D = 500mA V GS = 1.8V, I D = 350mAForward Transfer Admittance |Y fs |200 ⎯ ⎯ ms V DS =10V, I D = 0.2A Diode Forward Voltage (Note 6) V SD0.5 ⎯ 1.4 V V GS = 0V, I S = 115mA DYNAMIC CHARACTERISTICSInput Capacitance C iss⎯ ⎯ 150 pF V DS = 16V, V GS = 0Vf = 1.0MHzOutput Capacitance C oss⎯ ⎯ 25 pF Reverse Transfer Capacitance C rss⎯ ⎯ 20 pF Notes:4. Device mounted on FR-4 PCB.5. Pulse width ≤10μS, Duty Cycle ≤1%.6. Short duration pulse test used to minimize self-heating effect.V , DRAIN-SOURCE VOLTAGE (V)Fig. 1 Typical Output CharacteristicsDS I , D R A I N C U R R E N T (A )D V , GATE-SOURCE VOLTAGE (V)Fig. 2 GS Reverse Drain Current vs. Source-Drain VoltageT , CHANNEL TEMPERATURE (°C)Fig. 3 Gate Threshold Voltage vs. Channel Temperaturech 0.1I DRAIN CURRENT (A)Fig. 4 Static Drain-Source On-Resistance Vs. Drain Current D ,1R , S T A T I C D R A I N -S O U R C E O N -R E S I S T A N C E ()D S (o n )ΩI , DRAIN CURRENT (A)Fig. 5 Static Drain-Source On-Resistance vs. Drain CurrentD R , S T A T I C D R A I N -S O U R CE O N -R E S I S T A N C E ()D S (o n )ΩI , DRAIN CURRENT (A)Fig. 7DOn-Resistance vs. Drain Current and Gate Voltage T , JUNCTION TEMPERATURE (C)Fig. 8 j °Static Drain-Source, On-Resistance vs. TemperatureI , D R A I N -S O U R C E L E A K A G E C U R R E N T (n A )D SS I , R E V E R S E D R A I N C U R R E N T (A )DR 1000I , DRAIN CURRENT (mA)DFig. 11 Forward Transfer Admittance vs. Drain Current|Y |, F O R W A R D T R A N S F E R A D M I T T A N C E(S )fs V , DRAIN SOURCE VOLTAGE (V)DS Fig. 12 Capacitance VariationPackage Outline DimensionsSOT363Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Typ F 0.40 0.45 H 1.80 2.20 J 0 0.10 K 0.901.00 L 0.25 0.40 M 0.10 0.22α0° 8° All Dimensions in mmSuggested Pad LayoutIMPORTANT NOTICEDIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.LIFE SUPPORTDiodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in thelabeling can be reasonably expected to result in significant injury to the user.B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.Copyright © 2011, Diodes IncorporatedDimensions Value (in mm)Z 2.5 G 1.3 X 0.42 Y 0.6 C1 1.9 C2 0.65XZYC1C2C2G分销商库存信息: DIODESDMN2004DWK-7。

DMN6068LK3-13;中文规格书,Datasheet资料

A Product Line ofDiodes IncorporatedDMN6068LK360V N-CHANNEL ENHANCEMENT MODE MOSFETProduct SummaryV (BR)DSSR DS(on) I D T A = 25°C 60V68m Ω @ V GS = 10V 8.5A 100m Ω @ V GS = 4.5V7.0ADescription and ApplicationsThis MOSFET has been designed to minimize the on-state resistance (R DS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.• Motor Control• Transformer Driving Switch • DC-DC Converters• Power Management Functions •Uninterrupted Power SupplyFeatures and Benefits• 100% Unclamped Inductive Switch (UIS) test in production • Low on-resistance • Fast switching speed• “Green” component and RoHS compliant (Note 1) •Qualified to AEC-Q101 Standards for High ReliabilityMechanical Data• Case: TO252-3L • Case Material: Molded Plastic, “Green” Molding Compound. ULFlammability Classification Rating 94V-0 (Note 1) • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals Connections: See Diagram• Terminals: Matte Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 •Weight: 0.33 grams (approximate)Ordering Information (Note 1)Product Marking Reel size (inches) Tape width (mm)Quantity per reelDMN6068LK3-13 N6068L 1316 2,500Note: 1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information aboutDiodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.Marking InformationTOP VIEWPIN OUT -TOP VIEWGEquivalent CircuitGSD D= Manufacturer’s MarkingN6068L = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01-52)YYWWN6068LTO252-3LMaximum Ratings@T A = 25°C unless otherwise specifiedCharacteristic SymbolValueUnit Drain-Source voltage V DSS60 VGate-Source voltage (Note 2) V GS±20 VSingle Pulsed Avalanche Energy (Note 8) E AS37.5 mJSingle Pulsed Avalanche Current (Note 8) I AS 5.0 AContinuous Drain current V GS = 10V (Note 4)I D8.5A T A= 70°C (Note 4) 6.8(Note 3) 6.0Pulsed Drain current V GS= 10V (Note 5) I DM22.2 A Continuous Source current (Body diode) (Note 4) I S10.2 APulsed Source current (Body diode) (Note 5) I SM22.2 AThermal Characteristics@T A = 25°C unless otherwise specifiedCharacteristic SymbolValueUnitPower dissipation Linear derating factor (Note 3)P D4.1233WmW/°C (Note 4)8.4967.9(Note 6)2.1216.9Thermal Resistance, Junction to Ambient (Note 3)RθJA30.3°C/W (Note 4) 14.7(Note 6) 59.0Thermal Resistance, Junction to Lead (Note 7) RθJL 3.09Operating and storage temperature range T J, T STG-55 to 150 °CNotes: 2. AEC-Q101 V GS maximum is ±16V.3. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device ismeasured when operating in a steady-state condition.4. Same as note 2, except the device is measured at t ≤ 10 sec.5. Same as note 2, except the device is pulsed with D = 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device ismeasured when operating in a steady-state condition.7. Thermal resistance from junction to solder-point (at the end of the drain lead).8. UIS in production with L = 3.0mH, I AS = 5.0A, R G = 25Ω, V DD = 50V, starting T J = 25°CThermal Characteristics0.00.51.01.52.02.53.03.54.04.5Derating CurveTemperature (°C)M a x P o w e r D i s s i p a t i o n (W )Transient Thermal ImpedanceT h Pulse Width (s)Pulse Power DissipationPulse Width (s) M a x P o w e r D i s s i p a t i o n (W )Transient Thermal ImpedancePulse Width (s) TElectrical Characteristics @T A = 25°C unless otherwise specifiedCharacteristic Symbol Min Typ Max Unit Test ConditionOFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS 60 ⎯ ⎯ V I D = 250μA, V GS = 0V Zero Gate Voltage Drain Current I DSS ⎯ ⎯ 0.5 μA V DS = 60V, V GS = 0V Gate-Source Leakage I GSS ⎯ ⎯ ±100nAV GS = ±20V, V DS = 0VON CHARACTERISTICS Gate Threshold VoltageV GS(th) 1.0 ⎯ 3.0 V I D = 250μA, V DS = V GS Static Drain-Source On-Resistance (Note 9) R DS (ON) ⎯ ⎯ 0.068 Ω V GS = 10V, I D = 12A 0.100 V GS = 4.5V, I D = 6A Forward Transconductance (Notes 9 & 10) g fs ⎯ 19.7 ⎯ S V DS = 15V, I D = 12ADiode Forward Voltage (Note 9) V SD ⎯ 0.98 1.15 V I S = 12A, V GS = 0VReverse recovery time (Note 10) t rr 145 ⎯ ns I S = 12A, di/dt= 100A/μsReverse recovery charge (Note 10) Q rr ⎯ 929 ⎯ nC DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance C iss ⎯ 502 ⎯ pF V DS = 30V, V GS = 0Vf= 1MHz Output CapacitanceC oss ⎯ 45.7 ⎯ pF Reverse Transfer Capacitance C rss ⎯ 27.1 ⎯ pF Total Gate Charge Q g ⎯ 5.55 ⎯ nC V GS = 4.5VV DS = 30V I D = 12ATotal Gate Charge Q g ⎯ 10.3 ⎯ nC V GS = 10VGate-Source Charge Q gs ⎯ 1.6 ⎯ nC Gate-Drain ChargeQ gd ⎯ 3.5 ⎯ nC Turn-On Delay Time (Note 11) t D(on) ⎯ 3.6 ⎯ ns V DD = 30V, V GS = 10VI D = 12A, R G ≅ 6.0Ω Turn-On Rise Time (Note 11) t r ⎯ 10.8 ⎯ ns Turn-Off Delay Time (Note 11) t D(off) ⎯ 11.9 ⎯ ns Turn-Off Fall Time (Note 11)t f⎯8.7⎯nsNotes:9. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2% 10. For design aid only, not subject to production testing.11. Switching characteristics are independent of operating junction temperatures.Typical Characteristics0.11100.010.11100.010.1110Output CharacteristicsI D D r a i n C u r r e n t (A )V DS Drain-Source Voltage (V)Output CharacteristicsI D D r a i n C u r r e n t (A )V DS Drain-Source Voltage (V)Typical Transfer CharacteristicsI D D r a i n C u r r e n t (A )V GS Gate-Source Voltage (V)Normalised Curves v TemperatureN o r m a l i s e d R D S (o n ) a n d V G S (t h )Tj Junction Temperature (°C)On-Resistance v Drain CurrentR D S (o n ) D r a i n -S o u r c e O n -R e s i s t a n c e (Ω)I D Drain Current (A)I S D R e v e r s e D r a i n C u r r e n t (A )Typical Characteristics - continuedVDS - Drain - Source Voltage (V)246810Gate-Source Voltage v Gate ChargeCapacitance v Drain-Source VoltageQ - Charge (nC) VGSGate-SourceVoltage(V) 5101520EASAvalanche Energy (mJ) Single-Pulsed Avalanche RatingL Inductor (H)IASAvalancheCurrent(A)Test CircuitsCurrentGate charge test circuitSwitching time test circuitBasic gate charge waveform Switching time waveformsV DS GV GS90%10%DDV DSDPackage Outline DimensionsDIM Inches Millimeters DIM Inches Millimeters Min Max Min Max Min Max Min MaxA 0.086 0.094 2.18 2.39 e 0.090 BSC 2.29 BSCA1 - 0.005 - 0.127 H 0.370 0.410 9.40 10.41b 0.020 0.035 0.508 0.89 L 0.055 0.070 1.40 1.78b2 0.030 0.045 0.762 1.14 L1 0.108 REF 2.74 REFb3 0.205 0.215 5.21 5.46 L2 0.020 BSC 0.508 BSCc 0.018 0.024 0.457 0.61 L3 0.035 0.065 0.89 1.65c2 0.018 0.023 0.457 0.584 L4 0.025 0.040 0.635 1.016D 0.213 0.245 5.41 6.22 L5 0.045 0.060 1.14 1.52D1 0.205 - 5.21 - θ1° 0° 10° 0° 10°E 0.250 0.265 6.35 6.73 θ° 0° 15° 0° 15°- 4.32 - - - - - - E1 0.170Suggested Pad Layout6.20.244mm inches分销商库存信息: DIODESDMN6068LK3-13。

7NM60N

July 2010Doc ID 16472 Rev 21/17STD7NM60N, STF7NM60N STP7NM60N, STU7NM60NN-channel 600 V , 5 A, 0.76 Ω, DP AK, TO-220FP , TO-220, IP AKsecond generation MDmesh™ Power MOSFETFeatures■100% avalanche tested■Low input capacitance and gate charge ■Low gate input resistanceApplication■Switching applicationsDescriptionThese devices are N-channel Power MOSFETs realized using the second generation ofMDmesh TM technology. It applies the benefits of the multiple drain process to STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product offers improved on-resistance, low gate charge, high dv/dtcapability and excellent avalanche characteristics.Type V DSS @ T JmaxR DS(on) maxI DSTD7NM60N STF7NM60N STP7NM60N STU7NM60N650 V < 0.9 Ω 5 ATable 1.Device summaryOrder codes MarkingPackage Packaging STD7NM60N 7NM60NDP AKTape and reelSTF7NM60N TO-220FP T ube STP7NM60N TO-220T ube STU7NM60NIP AKT ubeContents STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60NContents1Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 162/17 Doc ID 16472 Rev 2STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N Electrical ratingsDoc ID 16472 Rev 23/171 Electrical ratingsTable 2.Absolute maximum ratingsSymbolParameterValueUnitTO-220, IPAK,DPAKTO-220FPV DS Drain-source voltage (V GS = 0)600V V GS Gate-source voltage± 25VI D Drain current (continuous) at T C = 25 °C 5 5 (1)1.Limited only by maximum temperature allowed A I D Drain current (continuous) at T C = 100 °C 3 3 (1)A I DM (2)2.Pulse width limited by safe operating area Drain current (pulsed)2020(1)A P TOT Total dissipation at T C = 25 °C 4520W dv/dt (3)3.I SD ≤ 5 A, di/dt ≤ 400 A/µs, V Peak < V (BR)DSSPeak diode recovery voltage slope15V/ns V ISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; T C = 25 °C)2500V T stg Storage temperature- 55 to 150°C T jMax. operating junction temperature150°CTable 3.Thermal dataSymbol ParameterValueUnitDPAK IPAKTO-220TO-220FPR thj-case Thermal resistance junction-case max 2.78 6.25°C/W R thj-amb Thermal resistance junction-ambient max 10062.5°C/W R thj-pcb Thermal resistance junction-pcb max 50°C/WT lMaximum lead temperature for soldering purpose300°CTable 4.Thermal dataSymbol ParameterValue Unit I ARAvalanche current, repetitive or not-repetitive (pulse width limited by T j max)2A E ASSingle pulse avalanche energy(starting T j = 25°C, I D = I AR , V DD = 50 V)119mJElectrical characteristics STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N4/17 Doc ID 16472 Rev 22 Electrical characteristics(T C = 25 °C unless otherwise specified)Table 5.On /off statesSymbol Parameter Test conditionsMin.Typ.Max.Unit V (BR)DSS Drain-sourcebreakdown voltageI D = 1 mA, V GS = 0600V I DSS Zero gate voltagedrain current (V GS = 0)V DS = Max rating V DS = Max rating, T C =125 °C 1100µA µA I GSS Gate-body leakage current (V DS = 0)V GS = ± 20 V100nA V GS(th)Gate threshold voltage V DS = V GS , I D = 250 µA 234V R DS(on)Static drain-source onresistanceV GS = 10 V , I D = 2.5 A0.760.9ΩTable 6.DynamicSymbol Parameter Test conditionsMin.Typ.Max.Unit C iss C oss C rss Input capacitance Output capacitance Reverse transfer capacitance V DS = 50 V , f = 1 MHz, V GS = 0-36324.61.1-pF pF pFC o(tr)(1)1.Is defined as a constant equivalent capacitance giving the same charging time as C oss when V DSincreases from 0 to 80% V DSS Equivalentcapacitance time relatedV DS = 0 to 480 V , V GS = 0-27-pFC o(er)(2)2.Is defined as a constant equivalent capacitance giving the same stored energy as C oss when V DSincreases from 0 to 80% V DSSEquivalentcapacitance energy related -17-pFR G Intrinsic gate resistancef = 1 MHz open drain - 5.4-ΩQg Q gs Q gdT otal gate charge Gate-source charge Gate-drain chargeV DD = 480 V , I D = 5 A,V GS = 10 V (see Figure 18)-142.77.7-nC nC nCSTD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N Electrical characteristicsDoc ID 16472 Rev 25/17Table 7.Switching timesSymbol ParameterTest conditions Min.Typ.MaxUnit t d(on)t r t d(off)t fTurn-on delay time Rise timeTurn-off-delay time Fall timeV DD = 300 V , I D = 2.5 A, R G = 4.7 Ω, V GS = 10 V (see Figure 19)-7102612-ns ns ns nsTable 8.Source drain diodeSymbol ParameterTest conditionsMin.Typ.Max.Unit I SD I SDM (1)1.Pulse width limited by safe operating area Source-drain currentSource-drain current (pulsed)-520A A V SD (2)2.Pulsed: pulse duration = 300 µs, duty cycle 1.5%Forward on voltage I SD = 5 A, V GS = 0- 1.3V t rr Q rr I RRM Reverse recovery time Reverse recovery charge Reverse recovery current I SD = 5 A, di/dt = 100 A/µs V DD = 60 V (see Figure 22)-2131.514ns nC A t rr Q rr I RRMReverse recovery time Reverse recovery charge Reverse recovery currentI SD = 5 A, di/dt = 100 A/µs V DD = 60 V , T j = 150 °C (see Figure 22)-2651.814ns nC AElectrical characteristics STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N6/17 Doc ID 16472 Rev 22.1 Electrical characteristics (curves)Figure 2.Safe operating area for DPAK,Figure 3.Thermal impedance for DPAK, IPAKSTD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N Electrical characteristicsDoc ID 16472 Rev 27/17Electrical characteristics STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N8/17 Doc ID 16472 Rev 2Figure 14.Normalized gate threshold voltageFigure 15.Normalized on resistance vsSTD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N Test circuitsDoc ID 16472 Rev 29/173 Test circuitsFigure 17.Switching times test circuit forFigure 18.Gate charge test circuitFigure 19.Test circuit for inductive loadFigure 20.Unclamped inductive load testFigure 21.Unclamped inductive waveformFigure 22.Switching time waveformPackage mechanical data STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N 4 Package mechanical dataIn order to meet environmental requirements, ST offers these devices in different grades ofECOPACK® packages, depending on their level of environmental compliance. ECOPACK®specifications, grade definitions and product status are available at: . ECOPACKis an ST trademark.10/17 Doc ID 16472 Rev 2STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N Package mechanical dataTable 9.TO-220FP mechanical datammDim.Min.Typ.Max.A 4.4 4.6B 2.5 2.7D 2.5 2.75E0.450.7F0.751F1 1.15 1.70F2 1.15 1.70G 4.95 5.2G1 2.4 2.7H1010.4L216L328.630.6L49.810.6L5 2.9 3.6L615.916.4L799.3Dia3 3.2Doc ID 16472 Rev 211/17Package mechanical data STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N12/17 Doc ID 16472 Rev 2STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N Package mechanical dataDoc ID 16472 Rev 213/17Package mechanical data STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N14/17 Doc ID 16472 Rev 2STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N Packaging mechanical dataDoc ID 16472 Rev 215/175Packaging mechanical dataTAPE AND REEL SHIPMENTDPAK FOOTPRINTDIM.mm inch MIN.MAX.MIN.MAX.A 33012.992B 1.50.059C 12.813.20.5040.520D 20.20.795G 16.418.40.6450.724N 501.968T22.40.881BASE QTY BULK QTY 25002500REEL MECHANICAL DATADIM.mm inch MIN.MAX.MIN.MAX.A0 6.870.2670.275B010.410.60.4090.417B112.10.476D 1.5 1.60.0590.063D1 1.50.059E 1.65 1.850.0650.073F 7.47.60.2910.299K0 2.55 2.750.1000.108P03.94.10.1530.161P17.98.10.3110.319P2 1.9 2.10.0750.082R 40 1.574W15.716.30.6180.641TAPE MECHANICAL DATAAll dimensions are in millimetersRevision history STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N16/17 Doc ID 16472 Rev 26 Revision historyTable 10.Document revision historyDate RevisionChanges29-Oct-20091First release.19-Jul-20102Corrected values in Table 3: Thermal data .STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60NPlease Read Carefully:Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice.All ST products are sold pursuant to ST’s terms and conditions of sale.Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein.UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST.ST and the ST logo are trademarks or registered trademarks of ST in various countries.Information in this document supersedes and replaces all information previously supplied.The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.© 2010 STMicroelectronics - All rights reservedSTMicroelectronics group of companiesAustralia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of AmericaDoc ID 16472 Rev 217/17。

DMN5L06K-7;中文规格书,Datasheet资料

N-CHANNEL ENHANCEMENT MODE MOSFETProduct SummaryV (BR)DSSR DS(ON) I DT A = 25°C 50V2.0Ω @ V GS = 5.0V300 mA 2.5Ω @ V GS = 2.5V200 mADescription and ApplicationsThis new generation 50V N-Channel Enhancement Mode MOSFET has been designed to minimize RDS(on) and yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and Load switch.• Load switchs • Level switchsFeatures and Benefits• Low On-Resistance • Very Low Gate Threshold Voltage (1.0V max) • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected Up To 2kV • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 standards for High ReliabilityMechanical Data• Case: SOT23 • Case Material: Molded Plastic, “Green” Molding Compound.UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Finish – Matte Tin annealed over Alloy 42 leadframe.Solderable per MIL-STD-202, Method 208 • Terminal Connections: See Diagram • Weight: 0.008 grams (approximate)Ordering Information (Note 4)Part Number Qualification Case PackagingDMN5L06K-7 Commercial SOT23 3000/Tape & Reel DMN5L06KQ-7Automotive SOT23 3000/Tape & ReelNotes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.2. See for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.4. For packaging details, go to our website at .Marking InformationDate Code KeyYear 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017Code TU V WX Y Z A B C D EMonth JanFeb Mar Apr May Jun Jul Aug Sep Oct Nov DecCode 1 2 3 4 5 6 7 8 9 O N DTop View Top ViewSOT23DAB = Product Type Marking CodeYM = Date Code Marking Y = Year (ex: T = 2006)M = Month (ex: 9 = September)ESD PROTECTED TO 2kVDrainDABY MEquivalent CircuitMaximum Ratings @T A = 25°C unless otherwise specifiedCharacteristic Symbol Value UnitDrain Source Voltage V DSS50 V Gate-Source Voltage V GSS±20 V Drain Current (Note 5) Continuous Pulsed (Note 6) I D300800mAThermal CharacteristicsCharacteristic Symbol Value UnitTotal Power Dissipation (Note 5) P D350 mW Thermal Resistance, Junction to Ambient R θJA357 °C/W Operating and Storage Temperature Range T J , T STG-65 to +150 °CElectrical Characteristics @ T A = 25°C unless otherwise statedCharacteristic SymbolMin Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV DSS 50 ⎯ ⎯ V V GS = 0V, I D = 10μAZero Gate Voltage Drain Current @ T C = 25°C I DSS ⎯ ⎯ 60 nA V DS = 50V, V GS = 0VGate-Body LeakageI GSS⎯⎯1 500 50 μAnA nA V GS = ±12V, V DS = 0V V GS = ±10V, V DS = 0V V GS = ±5V, V DS = 0VON CHARACTERISTICS (Note 7) Gate Threshold VoltageV GS(th) 0.49⎯ 1.0 V V DS = V GS , I D = 250μAStatic Drain-Source On-Resistance R DS(ON) ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 3.02.5 2.0 Ω V GS = 1.8V, I D = 50mA V GS = 2.5V, I D = 50mA V GS = 5.0V, I D = 50mAOn-State Drain Current I D(ON)0.5 1.4 ⎯ A V GS = 10V, V DS = 7.5V Forward Transconductance|Y fs | 200 ⎯ ⎯ mS V DS =10V, I D = 0.2A Source-Drain Diode Forward Voltage V SD 0.5 ⎯ 1.4 V V GS = 0V, I S = 115mA DYNAMIC CHARACTERISTICS Input Capacitance C iss ⎯ ⎯ 50 pFV DS = 25V, V GS = 0Vf = 1.0MHzOutput CapacitanceC oss ⎯ ⎯ 25 pFReverse Transfer CapacitanceC rss⎯⎯5.0 pFNotes:5. Device mounted on FR-4 PCB6. Pulse width ≤10mS, Duty Cycle ≤1%.7. Short duration pulse test used to minimize self-heating effect.Fig. 1 Typical Output CharacteristicsDS Fig. 2 Typical Transfer CharacteristicsGS T , CHANNEL TEMPERATURE (°C)Fig. 3 Gate Threshold Voltage vs. Channel Temperature ch -50-250255075100125150Fig. 4 Static Drain-Source On-Resistance vs. Drain CurrentD , R , S T A T I C D R A I N -S O U R CE O N -R E S I S T A NC E ()D S (o n )ΩI , DRAIN CURRENT (A)Fig. 5 Static Drain-Source On-Resistance vs. Drain Current DR , S T A T I C D R A I N -S O U R C E D S (o n )Fig. 6 Static Drain-Source On-Resistancevs. Gate-Source VoltageGS,R , S T A T I C D R A I N -S O U R C E O N -R E S I S T A N C E ()D S (o n )ΩFig. 7 A Static Drain-Source On-State Resistancevs. Ambient TemperatureR , S T A T I C D R A I N -S O U R C E O N -R E S I S T A N C E ()D S (o n )ΩD Fig.10 Forward Transfer Admittance vs. Drain Current|Y |, F O R W A R D T R A N S F E R A D M I T T A N C E (S )150500T , AMBIENT TEMPERATURE (C)Fig. 11 Derating Curve - TotalA °P , P O W E R D I S S I P A T I O N (m W )DPackage Outline DimensionsSuggested Pad LayoutSOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.0130.10 0.05 K 0.903 1.10 1.00 K1 - - 0.400 L 0.45 0.61 0.55 M 0.0850.18 0.11 α 0° 8° - All Dimensions in mmDimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 X EYCZIMPORTANT NOTICEDIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.LIFE SUPPORTDiodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:A. Life support devices or systems are devices or systems which:1. are intended to implant into the body, or2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in thelabeling can be reasonably expected to result in significant injury to the user.B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause thefailure of the life support device or to affect its safety or effectiveness.Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.Copyright © 2012, Diodes Incorporated分销商库存信息: DIODESDMN5L06K-7。

ADAM-6017快速入门手册[1]

ADAM6017快速入门手册快速入门手册第一章产品介绍产品介绍 .....................................................................................................................................2 1.1 adam-6017概述 ........................................................................................................................ 2 1.2 规格说明 . (3)1.2.1 一般规格 ......................................................................................................................... 3 1.2.1 环境 ................................................................................................................................ 3 1.2.2 模拟量输入 .................................................................................................................... 3 1.2.3 数字量输出 .................................................................................................................... 4 1.3 跳线设置 .................................................................................................................................. 4 第二章 ADAM-6017的软件安装的软件安装 .............................................................................................. 5 2.1 初始检查 ................................................................................................................................... 5 2.2 安装Advantech Adam/ Utility (5)2.2.1 软件路径 ........................................................................................................................ 5 2.2.2 软件支持的操作系统 .................................................................................................... 5 2.2.3 安装Advantech Adam/ Utility ...................................................................... 5 第三章硬件连接及测试硬件连接及测试 ................................................................................................................ 1010 3.1 硬件连接 (11)3.1.1 电源连接 ............................................................................................................................. 11 3.1.2 硬件接线 ............................................................................................................................. 11 3.1.3 adam-6017模拟量输入功能接线 ...................................................................................... 12 3.2 软件测试 (14)3.2.1 adam 模块通用参数配置 ................................................................................................... 14 3.2.2 Adam-6017模块参数配置 ................................................................................................. 18 3.2.3 Adam-6017模块独立通道参数配置 ................................................................................. 24 3.2.4 Adam-6017 GCL 功能 ........................................................................................................ 27 第四章例程使用详解例程使用详解 ......................................................................................................................... 2727 4.1 adam-6017板卡支持例程列表 .............................................................................................. 28 4.2 常用例子使用说明（以VB 例程为例） (28)4.2.1 6KReadAI （模拟量瞬时读值例程）.................................................................................. 28 4.2.2 6KSendRece （发送ASCII 码形式，获取模拟量的数据） .............................................. 30 4.2.3 Adam6015_17_18（模拟量瞬时读值；） ......................................................................... 31 第五章遇到问题遇到问题，，如何解决如何解决？？ ..............................................................................................3232第一章产品介绍1.1 1.1 adam adam--6017概述概述Adam-6017是一款基于以太网远程数据采集的智能型I/O 模块。

DMC2004VK-7;中文规格书,Datasheet资料

COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTORFeatures• Low On-Resistance • Low Gate Threshold Voltage V GS(th) <1V • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Complementary Pair MOSFET • Ultra-Small Surface Mount Package • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) • ESD Protected Gate • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High ReliabilityMechanical Data• Case: SOT-563 • Case Material: Molded Plastic, “Green” MoldingCompound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020C • Terminal Connections: See Diagram • Terminals: Finish – Matte Tin annealed over Copper leadframe.Solderable per MIL-STD-202, Method 208 • Weight: 0.006 grams (approximate)Ordering Information (Note 4)Part Number Case Packaging DMC2004VK-7SOT-563 3000/Tape & ReelNotes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.2. See for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.4. For packaging details, go to our website at /datasheets/ap02007.pdf.Marking InformationDate Code KeyYear 2007 200820092010 20112012Code U V W X Y ZMonth Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N De3SOT-563TOP VIEWInternal SchematicTOP VIEW BOTTOM VIEWESD protectedQ 2CAB = Product Type Marking Code YM = Date Code Marking Y = Year ex: U = 2007 M = Month ex: 9 = September GreenMaximum Ratings N-CHANNEL – Q 1 (@T A = +25°C, unless otherwise specified.)Characteristic Symbol Value UnitDrain Source Voltage V DSS20 V Gate-Source Voltage V GSS±8 V Drain Current (Note 5) T A = +25°C T A = +85°CI D670480 mAMaximum Ratings P-CHANNEL – Q 2 (@T A = +25°C, unless otherwise specified.)Characteristic Symbol Value UnitDrain Source VoltageV DSS-20 V Gate-Source Voltage V GSS±8 V Drain Current (Note 5) T A = +25°C T A = +85°CI D-530-380 mAThermal CharacteristicsCharacteristic Symbol Value UnitPower Dissipation (Note 5) P D400 mW Thermal Resistance, Junction to Ambient (Note 5) R θJA 312.5 °C/W Operating and Storage Temperature RangeT j , T STG-65 to +150 °CNote:5. Device mounted on FR-4 PCB.Electrical Characteristics N-CHANNEL – Q 1 (@T A = +25°C, unless otherwise specified.)Characteristic SymbolMin Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BV DSS 20 ⎯ ⎯V V GS = 0V, I D = 10µAZero Gate Voltage Drain Current I DSS ⎯ ⎯ 1.0 µAV DS = 16V, V GS = 0V Gate-Source LeakageI GSS ⎯ ⎯ ± 1.0µA V GS = ±4.5V, V DS = 0VON CHARACTERISTICS (Note 6) Gate Threshold VoltageV GS(th) 0.5 ⎯ 1.0 V V DS = V GS , I D = 250µAStatic Drain-Source On-Resistance R DS (ON)⎯ ⎯ ⎯ 0.4 0.5 0.7 0.550.70 0.90 Ω V GS = 4.5V, I D = 540mA V GS = 2.5V, I D = 500mA V GS = 1.8V, I D = 350mAForward Transfer Admittance |Y fs | 200 ⎯ ⎯ mS V DS =10V, I D = 0.2ADiode Forward Voltage (Note 6) V SD 0.5 ⎯ 1.2 V V GS = 0V, I S = 115mA DYNAMIC CHARACTERISTICS Input Capacitance C iss ⎯ ⎯ 150 pF V DS = 16V, V GS = 0Vf = 1.0MHz Output CapacitanceC oss ⎯ ⎯ 25 pF Reverse Transfer Capacitance C rss ⎯ ⎯ 20 pF Reverse Transfer CapacitanceC rss⎯⎯20 pFNotes: 6. Short duration pulse test used to minimize self-heating effect.Electrical Characteristics P-CHANNEL – Q 2 (@T A = +25°C, unless otherwise specified.)Characteristic SymbolMin Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BV DSS -20 ⎯ ⎯V V GS = 0V, I D = -250µAZero Gate Voltage Drain Current I DSS ⎯ ⎯ -1.0 µAV DS = -20V, V GS = 0V Gate-Source LeakageI GSS ⎯ ⎯ ± 1.0µA V GS = ±4.5V, V DS = 0VON CHARACTERISTICS (Note 6) Gate Threshold VoltageV GS(th) -0.5 ⎯ -1.0 V V DS = V GS , I D = -250µAStatic Drain-Source On-Resistance R DS (ON)⎯ 0.7 1.1 1.7 0.91.42.0 Ω V GS = -4.5V, I D = -430mA V GS = -2.5V, I D = -300mA V GS = -1.8V, I D = -150mAForward Transfer Admittance |Y fs | 200 ⎯ ⎯ mS V DS =10V, I D = 0.2ADiode Forward Voltage (Note 6) V SD -0.5 ⎯ -1.2 V V GS = 0V, I S = -115mA DYNAMIC CHARACTERISTICS Input Capacitance C iss ⎯ ⎯ 175 pFV DS = -16V, V GS = 0Vf = 1.0MHzOutput CapacitanceC oss ⎯ ⎯ 30 pFReverse Transfer CapacitanceC rss⎯⎯20 pFNotes: 6. Short duration pulse test used to minimize self-heating effect.Q 1, N-CHANNELFig. 1 Typical Output CharacteristicsDS I , D R A I N C U R R E N T (A )Fig. 2 Typical Transfer CharacteristicsGS I , D R A I N C U R R E N T (A )D Fig. 3 Gate Threshold Voltage vs. Ambient TemperatureA V , G A T E T H R E S H O L D V O L T A G E (V )G S (t h)I , DRAIN CURRENT (A)Fig. 4 Static Drain-Source On-Resistancevs. Drain CurrentDI , DRAIN CURRENT (A)Fig. 5 Static Drain-Source On-Resistancevs. Drain CurrentD I , DRAIN-SOURCE CURRENT (A)Fig. 6 Static Drain-Source On-Resistance vs.Drain-Source Current vs. Gate Source VoltageDQ 1, N-CHANNEL (cont.)T , AMBIENT TEMPERATURE (°C)Fig. 7 Static Drain-Source On-State Resistancevs. Ambient TemperatureAFig. 9 Forward Transfer Admittance vs. Drain Current DV , DRAIN-SOURCE VOLTAGE (V)Fig. 10 Typical CapacitanceDSQ 2, P-CHANNEL-V , DRAIN SOURCE VOLTAGE (V)Fig. 11 Typical Output CharacteristicsDS -I , D R A I N C U R R E N T (A )DFig. 12 Typical Transfer CharacteristicsGS -I , D R A I N C U R R E N T (A )D Fig. 13 Gate Threshold Voltage vs. Ambient TemperatureA -V , G A T E T H R E S H O L D V O L T A G E (V )G S (t h)-I , DRAIN-SOURCE CURRENT (A)Fig. 14 Static Drain-Source On-Resistance vs. Drain CurrentD -I , DRAIN-SOURCE CURRENT (A)Fig. 15 Static Drain-Source On-Resistance vs.Drain CurrentDFig. 16 Static Drain-Source On-Resistance vs.Drain-Source Current vs. Gate Source VoltageDQ 2, P-CHANNEL (cont.)Fig. 17 Static Drain-Source On-State Resistancevs. Ambient TemperatureAFig. 19 Forward Transfer Admittance vs. Drain CurrentD -V , DRAIN-SOURCE VOLTAGE (V)Fig. 20 Typical CapacitanceDSPackage Outline DimensionsSuggested Pad LayoutSOT563Dim Min Max Typ A 0.15 0.30 0.20 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D - - 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.55 0.60 0.60 L 0.100.30 0.20 M 0.10 0.18 0.11 All Dimensions in mmDimensions Value (in mm)Z 2.2 G 1.2 X 0.375 Y 0.5C11.7 C20.5 XZYC1C2C2GIMPORTANT NOTICEDIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.LIFE SUPPORTDiodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:A. Life support devices or systems are devices or systems which:1. are intended to implant into the body, or2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in thelabeling can be reasonably expected to result in significant injury to the user.B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause thefailure of the life support device or to affect its safety or effectiveness.Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.Copyright © 2012, Diodes Incorporated分销商库存信息: DIODESDMC2004VK-7。

DMM6000 系列数字多用表数据手册说明书

——————————————概述DMM6000系列数字多用表是一款高精度、高性价比测量仪器，包括DMM6000和DMM6001两个型号。

该仪器分辨率达6½位，可精确测量各模拟、数字信号；满足工作台或系统应用等各种测量需求，帮您准确了解电学世界。

该系列数字多用表支持高达13种类型的测量，且性能优异；标配USB 、LAN 和GPIB 接口（仅DMM6000型），兼容标准的SCPI 指令；具有一个USB Host 接口，支持U 盘读写；脱机数据采集功能，提供高达1,800,000个采样值的存储深度，采样结果可以方便地保存到仪器内部磁盘或者U 盘上；提供PC 机联机软件，dll 接口，更加方便用户自动化编程设计；支持固件联网更新功能，整个升级过程是零风险升级，升级即使中断也不会影响产品的使用，解决了用户的后顾之忧；显示界面使用最新的OLED 点阵屏，美观、亮度高、全视角；USB Device 接口复合了U 盘功能，让您很方便地获取仪器相关资料。

优秀的安规特性，让仪器的使用更加安全可靠。

——————————————产品特性◆支持13种测量类型；◆真有效值交流电压和电流测量；◆独特的电容测量（仅DMM6000型），性能更加优秀；◆等精度频率测量；◆最高采样率30,000读数/秒；◆丰富的数学运算功能；◆GPIB （仅DMM6000型）、LAN 、USB 标准接口；◆兼容SCPI 标准命令；◆文件管理，本地磁盘和U 盘读写操作； ◆存储深度1,800,000个采样值；◆支持仪器参数保存和读取；◆OLED 显示；◆丰富的PC 机软件支持；————————————产品应用◆高精度实验室；◆现场数据采集；◆自动化测试系统等。

产品数据手册DMM6000系列数据手册Data Sheet6½位数字多用表DS01010101 V1.2 Date: 2013/03/20 ————————————————————————————————产品照片广州致远电子股份有限公司版本日期原因V1.0 2012/06/01 创建文档V1.1 2013/01/28 添加DMM6001型数字多用表的相关信息V1.2 2013/03/20 修订个别技术参数V2.0 2015/01/09 使用了新的模板目录1.功能简介 (1)1.1测量 (1)1.1.1测量类型 (1)1.1.2数学运算 (1)1.1.3采样触发与数据采集 (2)1.2数据通信 (3)1.2.1仪器配置文件读写 (3)1.2.2采样数据保存 (3)1.2.3固件更新 (3)1.2.4远程控制 (3)1.2.5错误信息 (3)1.3SCPI支持 (3)1.4显示 (4)1.5辅助功能 (4)2.面板图 (5)2.1前面板 (5)2.1.1DMM6000型 (5)2.1.2DMM6001型 (6)2.2后面板 (6)2.2.1DMM6000型 (6)2.2.2DMM6001型 (7)3.技术参数 (8)3.1常规特性 (8)3.2准确度指标 (8)3.2.1电压 (8)3.2.2电流 (12)3.2.3电阻 (14)3.2.4电容 (16)3.2.5温度 (16)3.2.6频率 (17)3.2.7周期 (18)3.2.8连续性 (18)3.2.9二极管 (19)3.3应用尺寸 (20)4.订购信息 (21)5.免责声明 (22)1.功能简介本节介绍DMM6000系列数字多用表的测量、数据采集、数据通信、SCPI编程等功能；DMM6000系列数字多用表主要功能见表1.1。

多功能测试仪 6017 说明书

使用说明多功能测试仪MODEL 6017目录1.安全事项2.特点3.规格4.仪器布局5.测试准备5-1．电池安装5-2. 调零设置5-3. 安装测试线5-4. 电池电压确认5-5. 工作显示LED5-6. 刻度板照明5-7. 肩带安装5-8. 上盒盖收纳6.测试6-1. 交流电压测试6-2. 绝缘电阻测试6-3. 绝缘电阻连续测试6-4. 测试端口电压特性6-5. 接地电阻测试6-6. 精密测试6-7. 简易测试7. 各种测试探棒用金属头的说明与更换8. 接地线用适配器的说明与更换9. 可选件9-1. 带电线卷轴的接地线组合的使用10. 仪器外盒与清洁11. 故障说明1.安全事项本仪器根据下列国际规格设计、生产、检查合格后在最好状态下出货。

JIS C 1302-94 绝缘电阻计 JIS C 1304-95 接地电阻计IEC 61010-1 CAT III600V污染度2 IEC 61557-2/5本说明书中记载了避免人身伤害事故的安全警告及保证仪器能在良好状态下长期使用的注意事项。

仪器上的标志，表示必须阅读使用说明书的相关安全事项。

标志分为3种，请仔细阅读其内容。

危险小心：警告危险●仪器采用低压回路设计，因此，请勿在警告注意●测量前，请将量程开关设定适当位MODEL 6017/6018是多功能测试仪，可进行600V以下低压设备的绝缘电阻测试；配线、电气器具等的接地电阻测试；以及交流电压、地电压的测试。

●绝缘电阻测试中有3个额定量程（M-6017：125/250/500V，M-6018：250/500/1000V），接地电阻测试中有精密测试3个量程（12，120，1200Ω）与简易测试3个量程（12，120，1200Ω）。

同时配备了交流电压AC600V、地电压AC12V量程。

●设置为绝缘电阻计1000V量程时，蜂鸣（断续音）音发出警告提示存在高压。

（仅M-6018）●绝缘电阻测试后，自动放电功能可自动释放被测物中充电电荷，放电状态可在仪器上确认。

DMN6066SSD-13;中文规格书,Datasheet资料

A Product Line of Diodes IncorporatedDMN6066SSD60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFETProduct SummaryV (BR)DSSR DS(on) I D T A = 25°C 60V66m Ω @ V GS = 10V 4.4A 97m Ω @ V GS = 4.5V3.6ADescription and ApplicationsThis MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.• Motor control • Backlighting • DC-DC Converters • Power management functionsFeatures and Benefits• Low on-resistance • Fast switching speed• 100% Unclamped Inductive Switch (UIS) test in production • “Green” component and RoHS compliant (Note 1) • Qualified to AEC-Q101 Standards for High ReliabilityMechanical Data• Case: SO-8 • Case Material: Molded Plastic, “Green” Molding Compound. ULFlammability Classification Rating 94V-0 (Note 1) • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals Connections: See diagram below• Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 •Weight: 0.074 grams (approximate)Ordering Information (Note 1)Product Marking Reel size (inches) Tape width (mm)Quantity per reelDMN6066SSD-13 N6066SD 1312 2,500Note: 1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information aboutDiodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.Marking InformationTop ViewEquivalent Circuit= Manufacturer’s MarkingN6066SD = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01 - 53)Top ViewSO-8Maximum Ratings @T A = 25°C unless otherwise specifiedCharacteristic Symbol Value UnitDrain-Source voltage V DSS60 V Gate-Source voltage (Note 2) V GS±20 V Single Pulsed Avalanche Energy (Note 9) E AS 37.5 mJ Single Pulsed Avalanche Current (Note 9) I AS 5.0 AContinuous Drain current V GS = 10V(Note 4) I D4.4 A T A = 70°C (Note 4) 3.5 (Note 3) 3.3Pulsed Drain current V GS = 10V (Note 5) I DM 17.0 A Continuous Source current (Body diode) (Note 4) I S 3.2 A Pulsed Source current (Body diode) (Note 5) I SM 17.0 AThermal Characteristics @T A = 25°C unless otherwise specifiedCharacteristic Symbol Value UnitPower dissipationLinear derating factor (Notes 3 & 6)P D1.2510W mW/°C (Notes 3 & 7) 1.8 14.3 (Notes 4 & 6)2.1417.2 Thermal Resistance, Junction to Ambient (Notes 3 & 6)R θJA100 °C/W (Notes 3 & 7) 70 (Notes 4 & 6) 58Thermal Resistance, Junction to Lead (Notes 6 & 8) R θJL 55 Operating and storage temperature range T J , T STG-55 to 150 °C Notes: 2. AEC-Q101 V GS maximum is ±16V.3. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device ismeasured when operating in a steady-state condition.4. Same as note (3), except the device is measured at t ≤ 10 sec.5. Same as note (3), except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.6. For a dual device with one active die.7. For a device with two active die running at equal power.8. Thermal resistance from junction to solder-point (at the end of the drain lead).9. UIS in production with L = 3.0mH, I AS = 5.0A, R G = 25Ω, V DD = 50V, starting T J = 25°C.Thermal CharacteristicsSafe Operating Area DS 0.00.20.40.60.81.01.21.41.61.82.0Derating CurveTemperature (°C)M a x P o w e r D i s s i p a t i o n (W )Transient Thermal ImpedanceT h e r m a l R e s i s t a n c e (°C /W )Pulse Width (s)110100Pulse Power DissipationPulse Width (s)M a x i m u m P o w e r (W )Electrical Characteristics @T A = 25°C unless otherwise specifiedCharacteristic Symbol Min Typ Max Unit Test ConditionOFF CHARACTERISTICSDrain-Source Breakdown Voltage BV DSS60 ⎯ ⎯ V I D = 250μA, V GS = 0V Zero Gate Voltage Drain Current I DSS⎯ ⎯ 0.5 μA V DS = 60V, V GS = 0V Gate-Source Leakage I GSS⎯ ⎯ ±100 nA V GS = ±20V, V DS = 0V ON CHARACTERISTICSGate Threshold Voltage V GS(th)1.0 ⎯ 3.0 V I D = 250μA, V DS = V GS Static Drain-Source On-Resistance (Note 10) R DS (ON) ⎯0.048 0.066 Ω V GS = 10V, I D = 4.5A0.068 0.097 V GS = 4.5V, I D = 3.5A Forward Transconductance (Notes 10 & 11) g fs⎯ 19.2 ⎯ S V DS = 15V, I D = 6A Diode Forward Voltage (Note 10) V SD⎯ 0.89 1.15 V I S = 4.5A, V GS = 0V Reverse recovery time (Note 11) t rr22.2 ⎯ ns I S = 1.9A, di/dt= 100A/μsReverse recovery charge (Note 11) Q rr⎯ 16.9 ⎯ nC DYNAMIC CHARACTERISTICS (Note 11) Input Capacitance C iss ⎯ 502 ⎯pF V DS = 30V, V GS = 0Vf= 1MHzOutput Capacitance C oss ⎯ 45.7 ⎯pF Reverse Transfer Capacitance C rss ⎯ 27.1 ⎯ pF Total Gate Charge (Note 12) Q g ⎯ 5.4 ⎯ nC V GS = 4.5V V DS = 30VI D = 4.5A Total Gate Charge (Note 12) Q g ⎯ 10.3 ⎯ nC V GS = 10VGate-Source Charge (Note 12) Q gs ⎯ 1.7 ⎯ nC Gate-Drain Charge (Note 12) Q gd ⎯ 3.2 ⎯ nC Turn-On Delay Time (Note 12) t D(on) ⎯ 2.7 ⎯ ns V DD = 30V, V GS = 10V I D = 1A, R G ≅ 6.0Ω Turn-On Rise Time (Note 12) t r ⎯ 2.4 ⎯ ns Turn-Off Delay Time (Note 12) t D(off) ⎯ 14.7 ⎯ ns Turn-Off Fall Time (Note 12) t f ⎯ 5.4 ⎯ns Notes:10. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%11. For design aid only, not subject to production testing.12. Switching characteristics are independent of operating junction temperatures.Typical Characteristics0.010.11101E-30.010.1110-5050100150Output CharacteristicsI D D r a i n C u r r e n t (A )V DS Drain-Source Voltage (V)Output CharacteristicsI D D r a i n C u r r e n t (A )V DS Drain-Source Voltage (V)Typical Transfer CharacteristicsI D D r a i n C u r r e n t (A )V GS Gate-Source Voltage (V)Normalised Curves v TemperatureN o r m a l i s e d R D S (o n ) a n d V G S (t h )Tj Junction Temperature (°C)On-Resistance v Drain CurrentR D S (o n ) D r a i n -S o u r c e O n -R e s i s t a n c e (Ω)I D Drain Current (A)I S D R e v e r s e D r a i n C u r r e n t (A )Typical Characteristics - continuedV DS - Drain - Source Voltage (V)0246810Gate-Source Voltage v Gate ChargeCapacitance v Drain-Source VoltageQ - Charge (nC)V G S G a t e -S o u r c e V o l t a g e (V )A Product Line of Diodes IncorporatedDMN6066SSDTest CircuitsCurrentChargeGate charge test circuitSwitching time test circuitBasic gate charge waveform Switching time waveformsV DS GV GS90%10%DDV DSDPackage Outline DimensionsDIM Inches Millimeters DIM InchesMillimetersMin. Max. Min. Max.Min. Max. Min.Max.A0.0530.0691.351.75e0.050 BSC1.27 BSCA1 0.004 0.010 0.10 0.25 b 0.013 0.020 0.33 0.51D 0.189 0.197 4.80 5.00 c 0.008 0.010 0.19 0.25H 0.228 0.244 5.80 6.20 θ0° 8° 0° 8°E 0.150 0.157 3.80 4.00 h 0.010 0.020 0.25 0.50L 0.016 0.050 0.40 1.27 - - - - -Suggested Pad Layout0.60.024mm inchesIMPORTANT NOTICEDIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.LIFE SUPPORTDiodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:A. Life support devices or systems are devices or systems which:1. are intended to implant into the body, or2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in thelabeling can be reasonably expected to result in significant injury to the user.B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause thefailure of the life support device or to affect its safety or effectiveness.Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2011, Diodes Incorporated分销商库存信息: DIODESDMN6066SSD-13。

Nema-7 压力真空开关参数表说明书

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PSW790B-L, $370, shown smaller than actual size
Stainless Steel Actuator Seal: (psi
The OMEGA® PSW790 Series switches are designed to satisfy
OPTIONAL CONFIGURATIONS
Ordering Example: PSW790SS-L-HS has a stainless steel seal, a range of 15 psi and a hermetically sealed 11 A switch, $370 + 50 + 90 = $510.

DMN6068SE-13;中文规格书,Datasheet资料

A Product Line of Diodes IncorporatedDMN6068SE60V N-CHANNEL ENHANCEMENT MODE MOSFETProduct SummaryV (BR)DSSR DS(on) I D T A = 25°C 60V68m Ω @ V GS = 10V 5.6A 100m Ω @ V GS = 4.5V4.7ADescription and ApplicationsThis MOSFET has been designed to minimize the on-state resistanceand yet maintain superior switching performance, making it ideal for high efficiency power management applications.• Motor control • Transformer driving switch • DC-DC Converters• Power management functions • Uninterrupted power supplyFeatures and Benefits• 100% Unclamped Inductive Switch (UIS) test in production • Low on-resistance• Fast switching speed• “Green” component and RoHS compliant (Note 1) • Qualified to AEC-Q101 Standards for High ReliabilityMechanical Data• Case: SOT223 • Case Material: Molded Plastic, “Green” Molding Compound.UL Flammability Classification Rating 94V-0 (Note 1) • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals Connections: See diagram below• Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 •Weight: 0.112 grams (approximate)Ordering Information (Note 1)Product Marking Reel size (inches) Tape width (mm)Quantity per reel DMN6068SE-13 N6068 13 124,000Notes: 1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.Marking InformationGEquivalent CircuitPin Out - Top ViewTop ViewSOT223= Manufacturer’s MarkingN6068 = Product Type Marking Code YWW = Date Code Marking Y = Year (ex: 9 = 2009) WW = Week (01 - 53)N6068YWWMaximum Ratings@T A = 25°C unless otherwise specifiedCharacteristic SymbolValueUnit Drain-Source voltage V DSS60 VGate-Source voltage (Note 2) V GS±20 VSingle Pulsed Avalanche Energy (Note 7) E AS 37.5 mJSingle Pulsed Avalanche Current (Note 7) I AS 5.0 AContinuous Drain current V GS = 10V (Note 4)I D5.6A T A = 70°C (Note 4) 4.5(Note 3) 4.1Pulsed Drain current V GS= 10V (Note 5) I DM20.8 AContinuous Source current (Body diode) (Note 4) I S 4.9 APulsed Source current (Body diode) (Note 5) I SM20.8 AThermal Characteristics@T A = 25°C unless otherwise specifiedCharacteristic SymbolValueUnitPower dissipation Linear derating factor (Note 3)P D2.016.0 WmW/°C (Note 4)3.729.5Thermal Resistance, Junction to Ambient (Note 3)RθJA62.5°C/W (Note 4) 34Thermal Resistance, Junction to Lead (Note 6) RθJL11.5Operating and storage temperature range T J, T STG-55 to 150 °CNotes: 2. AEC-Q101 V GS maximum is ±16V.3. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device ismeasured when operating in a steady-state condition.4. Same as note (3), except the device is measured at t ≤ 10 sec.5. Same as note (3), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.6. Thermal resistance from junction to solder-point (at the end of the drain lead).7. UIS in production with L = 3.0mH, I AS = 5.0A, R G = 25Ω, V DD=50V, starting T J = 25°C.Thermal CharacteristicsTransient Thermal ImpedanceT h Pulse Width (s)Pulse Power DissipationPulse Width (s)Electrical Characteristics @T A = 25°C unless otherwise specifiedCharacteristic Symbol Min Typ Max Unit Test ConditionOFF CHARACTERISTICSDrain-Source Breakdown Voltage BV DSS60 ⎯ ⎯ V I D = 250μA, V GS = 0V Zero Gate Voltage Drain Current I DSS⎯ ⎯ 0.5 μA V DS = 60V, V GS = 0V Gate-Source Leakage I GSS⎯ ⎯ ±100 nA V GS = ±20V, V DS = 0V ON CHARACTERISTICS Gate Threshold Voltage V GS(th) 1.0 ⎯ 3.0 V I D = 250μA, V DS = V GSStatic Drain-Source On-Resistance (Note 8) R DS (ON)⎯ ⎯ 0.068 Ω V GS = 10V, I D = 12A0.100 V GS = 4.5V, I D = 6AForward Transconductance (Notes 8 & 9) g fs ⎯ 19.7 ⎯ S V DS = 15V, I D = 12A Diode Forward Voltage (Note 8) V SD ⎯ 0.98 1.15 V I S = 12A, V GS = 0V Reverse recovery time (Note 9) t rr 145 ⎯ns I S = 12A, di/dt= 100A/μsReverse recovery charge (Note 9) Q rr ⎯ 929 ⎯ nC DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C iss ⎯ 502 ⎯pF V DS = 30V, V GS = 0Vf= 1MHzOutput Capacitance C oss ⎯ 45.7 ⎯pF Reverse Transfer Capacitance C rss ⎯ 27.1 ⎯ pF Total Gate Charge (Note 10) Q g ⎯ 5.55 ⎯ nC V GS = 4.5V V DS = 30V I D = 12A Total Gate Charge (Note 10) Q g ⎯ 10.3 ⎯ nC V GS = 10V Gate-Source Charge (Note 10) Q gs ⎯ 1.6 ⎯ nC Gate-Drain Charge(Note 10) Q gd ⎯ 3.5 ⎯nC Turn-On Delay Time (Note 10) t D(on)⎯ 3.6 ⎯ ns V DD = 30V, V GS = 10V I D = 12A, R G ≅ 6.0Ω Turn-On Rise Time (Note 10) t r ⎯ 10.8 ⎯ ns Turn-Off Delay Time (Note 10) t D(off)⎯ 11.9 ⎯ ns Turn-Off Fall Time (Note 10) t f⎯ 8.7 ⎯ ns Notes:8. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%9. For design aid only, not subject to production testing.10. Switching characteristics are independent of operating junction temperatures.Typical Characteristics0.010.11101E-30.010.1110Output CharacteristicsI D D r a i n C u r r e n t (A )V DS Drain-Source Voltage (V)Output CharacteristicsI D D r a i n C u r r e n t (A )V DS Drain-Source Voltage (V)Typical Transfer CharacteristicsI D D r a i n C u r r e n t (A )V GS Gate-Source Voltage (V)Normalised Curves v TemperatureN o r m a l i s e d R D S (o n ) a n d V G S (t h )Tj Junction Temperature (°C)On-Resistance v Drain CurrentR D S (o n ) D r a i n -S o u r c e O n -R e s i s t a n c e (Ω)I D Drain Current (A)I S D R e v e r s e D r a i n C u r r e n t (A )Typical Characteristics - continuedV DS - Drain - Source Voltage (V)0246810Gate-Source Voltage v Gate ChargeCapacitance v Drain-Source VoltageQ - Charge (nC)V G S G a t e -S o u r c e V o l t a g e (V )5101520E AS Avalanche Energy (mJ)Single-Pulsed Avalanche RatingL Inductor (H)I A S A v a l a n c h e C u r r e n t (A )Test CircuitsCurrentGate charge test circuitSwitching time test circuitBasic gate charge waveform Switching time waveformsV DS GV GS90%10%DDV DSA Product Line of Diodes IncorporatedDMN6068SEPackage Outline DimensionsDIMMillimeters Inches DIMMillimeters InchesMin Max Min Max Min Max Min MaxA - 1.80 - 0.071 D 6.30 6.70 0.2480.264 A1 0.02 0.10 0.0008 0.004 e 2.30 BSC 0.0905 BSC A2 1.55 1.65 0.0610 0.0649 e1 4.60 BSC 0.181 BSC b 0.66 0.84 0.026 0.033 E 6.70 7.30 0.264 0.287 b2 2.90 3.10 0.114 0.122 E1 3.30 3.70 0.130 0.146 C 0.23 0.33 0.009 0.013 L 0.90 - 0.355 -Suggested Pad LayoutA Product Line ofDMN6068SEIMPORTANT NOTICEDIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.LIFE SUPPORTDiodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:A. Life support devices or systems are devices or systems which:1. are intended to implant into the body, or2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in thelabeling can be reasonably expected to result in significant injury to the user.B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.Copyright © 2011, Diodes Incorporated分销商库存信息: DIODESDMN6068SE-13。

MATE-N-LOK电源接触器系列产品说明说明书

770010-4Universal MATE-N-LOK, Power Contacts, Contact, Operating Voltage 600 VAC, Gold, 24 – 18AWG Wire Size, .2 – 1mm² Wire Size, Wire-to-Wire, Wire & CableConnectors > Power Connectors >Power ContactsWire Size:.2 – 1 mm²Contact Mating Area Plating Material:GoldOperating Voltage:600 VACPower Contact Type:ContactFeaturesProduct Type Features Power Contact Type Contact Connector SystemWire-to-Wire Connector & Contact Terminates To Wire & CableElectrical Characteristics Operating Voltage 600 VACContact FeaturesContact Mating Area Plating Material Gold Contact Current Rating (Max)7 A Contact TypeSocket Contact Retention Within Housing Without Mating Pin Diameter 2.2 mm[.086 in]Contact Base MaterialPhosphor Bronze Contact Mating Area Plating Material Thickness.76 µm[30 µin]Wire Contact Termination Area Plating Material Thickness 1.27 µm[50 µin]Wire Contact Termination Area Plating MaterialTin-Lead770010-4 ACTIVEMATE-N-LOK TE Internal #:770010-4Universal MATE-N-LOK, Power Contacts, Contact, Operating Voltage 600 VAC, Gold, 24 – 18AWG Wire Size, .2 – 1mm² Wire Size, Wire-to-Wire, Wire & CableView on >Universal MATE-N-LOK|Wire Contact Termination Area Plating Material Tin-LeadWire Contact Termination Area Plating Material Finish MatteContact Orientation StraightContact Underplating Material NickelContact Underplating Material Thickness 1.27 µm[50 µin]Termination FeaturesTermination Method to Wire & Cable CrimpMechanical AttachmentConnector Mounting Type Cable Mount (Free-Hanging)Wire Insulation Support WithoutDimensionsWire Size.2 – 1 mm²Accepts Wire Insulation Diameter Range 1.02 – 2.54 mm[.04 – .1 in]Usage ConditionsOperating Temperature Range-55 – 120 °C[-67 – 248 °F] Operation/ApplicationCircuit Application PowerIndustry StandardsCSA Rating CertifiedGlow Wire Rating Standard Part - Not Glow WireVDE Tested YesAgency/Standard CSA, ULCSA File Number LR 7189UL Rating RecognizedUL File Number E28476Packaging FeaturesPackaging Method ReelPackaging Quantity5000OtherWire/Cable Type Discrete WireWire Type StrandedFor Use With Standard Universal MATE-N-LOK(Pin)Product ComplianceFor compliance documentation, visit the product page on >EU RoHS Directive 2011/65/EU Not Compliant EU ELV Directive 2000/53/ECNot CompliantChina RoHS 2 Directive MIIT Order No 32, 2016Restricted Materials Above Threshold EU REACH Regulation (EC) No. 1907/2006Current ECHA Candidate List: JUN 2020 (209)Candidate List Declared Against: JUL 2017 (174)Does not contain REACH SVHCHalogen ContentLow Halogen - Br, Cl, F, I < 900 ppm per homogenous material. Also BFR/CFR/PVC FreeSolder Process CapabilityNot applicable for solder process capabilityProduct Compliance DisclaimerThis information is provided based on reasonable inquiry of our suppliers and represents our current actual knowledge based on the information they provided. This information is subject to change. The part numbers that TE has identified as EU RoHS compliant have a maximum concentration of 0.1% by weight in homogenous materials for lead, hexavalent chromium, mercury, PBB, PBDE, DBP, BBP, DEHP, DIBP, and 0.01% for cadmium, or qualify for an exemption to these limits as defined in the Annexes of Directive 2011/65/EU (RoHS2). Finished electrical and electronic equipment products will be CE marked as required by Directive 2011/65/EU. Components may not be CE marked.Additionally, the part numbers that TE has identified as EU ELV compliant have a maximum concentration of 0.1% by weight in homogenous materials for lead, hexavalent chromium, and mercury, and 0.01% for cadmium, or qualify for an exemption to these limits as defined in the Annexes of Directive 2000/53/EC (ELV). Regarding the REACH Regulations, TE’s information on SVHC in articles for this part number is still based on the European Chemical Agency (ECHA) ‘Guidance on requirements forsubstances in articles’(Version: 2, April 2011), applying the 0.1% weight on weight concentration threshold at the finished product level. TE is aware of the European Court of Justice ruling of September 10th, 2015 also known as O5A (Once An Article Always An Article) stating that, in case of ‘complex object’, the threshold for a SVHC must be applied to both the product as a whole and simultaneously to each of the articles forming part of its composition. TE has evaluated this ruling based on the new ECHA “Guidance on requirements for substances in articles” (June 2017, version 4.0) and will be updating its statements accordingly.TE Model / Part #770023-115P UMNLII IN-LNE PLUG HSG KITTE Model / Part #91510-1CERTICRIMP 2,SAHT UMNL24-18TE Model / Part #2305570-1TERMINAL CUTTER, SIDE FEEDTE Model / Part #90548-1ASSY PRO-CRIMPER UNIV M-N-LCompatible PartsRectangular Boots & Strain Relief(35)Power Contacts(207)Connector Contacts(11)Circular Power Connectors(2) TE Model / Part #2-2266544-1OCEAN-2.0-APPLICATOR-S-070F100FTE Model / Part #90548-2PROCRIMPER DIE ASSY UNIV MNLTE Model / Part #770020-106P UMNLII IN-LNE PLUG HSG KITTE Model / Part #770027-106P UMNLII IN-LINE CAP HSG KITTE Model / Part #770019-104P UMNLII IN-LNE PLUG HSG KITTE Model / Part #770025-103P UMNLII IN-LINE CAP HSG KITTE Model / Part #770026-104P UMNLII IN-LINE CAP HSG KITTE Model / Part #770030-115P UMNLII IN-LINE CAP HSG KITTE Model / Part #770024-102P UMNLII IN-LINE CAP HSG KITTE Model / Part #770028-109P UMNLII IN-LINE CAP HSG KITTE Model / Part #770021-109P UMNLII IN-LNE PLUG HSG KITTE Model / Part #770022-112P UMNLII IN-LNE PLUG HSG KITTE Model / Part #770018-103P UMNLII IN-LNE PLUG HSG KITTE Model / Part #770029-112P UMNLII IN-LINE CAP HSG KITTE Model / Part #770017-102P UMNLII IN-LNE PLUG HSG KITTE Model / Part #770016-105P UMNLII IN-LNE PLUG HSG KITAlso in the Series Universal MATE-N-LOKTE Model / Part #641191-404P MTA100 CONN ASSY WHT 24AWGTE Model / Part #203966-1CORNER GUIDE SKT,M SERIESTE Model / Part #1648295-1702-0107-01108=SA CONTACT,SKTTE Model / Part #66555-2TYPE CR ACTIVE CONTACTTE Model / Part #207226-1120 POS ZERO ENTRY CONNTE Model / Part #208498-1RECEPT MODULE ASSY FOR RIBBONTE Model / Part #1-51692-6N SERIES PLUG RG 217TE Model / Part #641191-202P MTA100 CONN ASSY WHT 24AWGTE Model / Part #1-745508-2FERRULE SPLIT RING, HDTE Model / Part #204370-5PIN CONT,SZ 22D,AMPLIMITEWire-to-Board Headers & Receptacles (3)Rectangular Power Connectors(716)Rectangular Connector Seals(26)Rectangular Connector Locking(4)Rectangular Connector Keying Plugs(3)Rectangular Connector Housings(3)Rectangular Connector Adapters(7)Customers Also BoughtDocumentsProduct DrawingsUMNL II SOK SN/AUNI/PHBZEnglishCAD Files3D PDF3D3D PDFEnglishCustomer View ModelENG_CVM_770010-4_E.3d_igs.zipEnglishCustomer View ModelENG_CVM_770010-4_E.3d_stp.zipEnglishCustomer View ModelENG_CVM_770010-4_E.2d_dxf.zipEnglishCustomer View ModelENG_CVM_CVM_770010-4_P.2d_dxf.zipEnglishCustomer View ModelENG_CVM_CVM_770010-4_P.3d_igs.zipEnglishCustomer View ModelENG_CVM_CVM_770010-4_P.3d_stp.zipEnglishBy downloading the CAD file I accept and agree to the of use.Terms and ConditionsDatasheets & Catalog PagesSOFT_SHELL_PIN_SOCKET_CONNECTORS_STANDARD_DENSITY EnglishProduct SpecificationsApplication SpecificationEnglish。

伊顿布斯曼系列 Quik-Spec 电源模块开关电梯隔离开关数据表

145Bussmann series Quik-Spec Power Module switch elevator disconnectCatalog symbol:• PS_Description:The Bussmann™ series Quik-Spec™ Power Module Switch is an all-in-one elevator disconnect switch available in configurations to meet virtuallyany single elevator shutdown and disconnect requirement.Specifications:Ratings• Volts - 208, 240, 480, 600 Vac• Amps - 30, 60, 100, 200, 400• SCCR - 200 kA RMS Agency information• UL® 98 enclosed and dead-front switch - Guide WIAX, WIAX7 (Canada), File E182262• cULus, NEMA® 1, UL 50, Listed enclosure cUL per Canadian Standards C22.2, No. 0-M91-CAN/ CSA® C22.2, No. 4-M89 enclosed switch• U.B.C. and C.B.C. seismic qualified, and I.B.C. approvedFeatures:• 30-400 amp 600 Vac 3-phase fused power switch• 200 kA RMS Short-Circuit Current Rating (SCCR)• Shunt trip 120 Vac or 24 Vdc option• Fire safety interface relay• Fire alarm voltage monitoring relay (to monitor shunt trip voltage)• Ground lug• Class J fuse mounting only1• Mechanically interlocked auxiliary contacts for hydraulic elevators with battery backup(5 amp 120 Vac rated)Options:• Control power transformer with fuses and blocks• Key to test switch• Pilot light – “ON”• Isolated neutral lug2• NEMA 3R, 4, and 12 enclosures• Type 1 Surge Protection Device (SPD) - 50 kA surge current capacityFor added protection, use the Bussmann series SAMI™ fuse covers3 to improve electrical safety [OSHA 1910.335(A)(2)(ii)].no. 1204.1 Class J fuses not included.2 Oversized 200% rated neutral option available where required by excessive non-linear loads.3 Covers available up to 100A.2Technical Data 1145Effective September 2024Bussmann series Quik-Spec Power Module Switchelevator disconnect/bussmannseriesCatalog number system:* 100 VA with primary and secondary fusing (120 V secondary).** For use only with R1 option.† Type 1 standard, no suffix designator required.Conductor data:PS330#14-1/0Slot HD#14-2Slot HD#840 (4.5)#840 (4.5)#6-445 (5.1)#6-245 (5.1)#3-1/050 (5.6)PS660#14-1/0#14-1035 (3.9)Slot HD#14-2#14-1035 (3.9)Slot HD#840 (4.5)#840 (4.5)#6-445 (5.1)#6-245 (5.1)#3-1/050 (5.6)PS1100#14-1/0#14-1/050 (5.6)Slot HD #14-1/0#14-1/050 (5.6)Slot HD PS2200#4-4/0#4-4/0120 (13.5)3/16” hex socket #4-300kcmil #4-300kcmil275 (31.1)5/16” hex socket PS4400(2) #2-500kcmil (2) #2-500kcmil 375 (42.4)5/16” hex socket(2) 1/0-300kcmil or(1) 750kcmil(2) 1/0-300kcmil or (1) 750kcmil500 (56.5)3/8” hex socket3Technical Data 1145Effective September 2024Bussmann series Quik-Spec Power Module Switch elevator disconnect /bussmannseriesConductor data:PS330#14-2Slot HD#840 (4.5)#6-245 (5.1)PS660#14-2#14-1035 (3.9)Slot HD#840 (4.5)#6-245 (5.1)PS1100#14-1/0#14-1/050 (5.6)Slot HDPS2200#6-250kcmil#6-250kcmil275 (31.1)5/16” hex socket PS4400(2) 1/0-300kcmil or (1) 750kcmil(2) 1/0-300kcmil or (1) 750kcmil500 (56.5)3/8” hex socketTerminal block data:Switch maximum horsepower ratings:Ratings are based on three-phase, motor type and time-delay fuses.24051020407548010254075150600153050100200The above table can be used for estimating switch amp ratings for motor loads based upon the motor horsepower. For general applications, excluding wound rotor and DC motors, NEC ® 430.52 allows sizing at 175% of motor Full Load Amps (FLA) or the next standard size per NEC 240.6. If sizing at 175% will not allow the motor to start, NEC 430.52 will allow the fuses to be sized up to 225% of motor full load amps or the next size down.NOTE: In sizing the fuses, the motor FLA is per NEC table 430.250, not per motor nameplate information. Inrush currents of motors may vary, consult motor manufacturer data for correct sizing. On elevator applications, motor load plus auxiliary loads need to be considered. Follow elevator manufacturer’s recommendation for correct fuse sizing.Standard shunt trip ratings:For 30-100 A, 200 A and 400 A Power Module Switches.* Will handle up to 447 VA inrush.4Technical Data 1145Effective September 2024Bussmann series Quik-Spec Power Module Switchelevator disconnect/bussmannseries29.6 (752)17.3 (439)6.9 (165)11.2 (284)28.4 (721)10 (254)PS660PS1100PS220032.6 (828)21.3 (541)7.0 (178)11.3 (287)31.1 (790)17 (432)PS4*40054.6 (1387)26.5 (673)7.5 (190)12.7 (323)53.3 (1354)22 (559)* PS4 dimensions shown are for NEMA 1 enclosure only. Contact factory for availability of other enclosure ratings.Power Module Switch shipping weights*PS276 (34.5)PS358 (26.3)PS4198 (89.8)PS658 (26.3)* Weights for each catalog number family are average.5Technical Data 1145Effective September 2024Bussmann series Quik-Spec Power Module Switch elevator disconnect/bussmannseriesPower Module Switch wiring:6Technical Data 1145Effective September 2024Bussmann series Quik-Spec Power Module Switchelevator disconnect/bussmannseriesPower Module Switch wiring — continued:7Technical Data 1145Effective September 2024Bussmann series Quik-Spec Power Module Switch elevator disconnect/bussmannseriesPower Module Switch wiring — continued:8/bussmannseriesIntegrated surge protection for the Bussmann series power module switchSurge protective device specificationsSurge current capacity per phase50 kANominal discharge current (I n )20 kA for 240S, 208Y , 480Y ,240D and 480D10 kA for 600Y and 600D Short-circuit current rating (SCCR)200 kASPD typeType 1 (can also be used in Type 2 applications)System voltages available (Vac) Single split-phase Three-phase wye Three-phase delta120/240120/208, 277/480, 347/600 240, 480, 600Protection modesSingle split-phase and three-phase wye Three-phase deltaL-N, L-L L-G, L-LMaximum continuous operating voltage (MCOV)240V straight and 208V wye 480V wye 600V wye 240V delta 480V delta 600V delta150 L-N, 300 L-L 320 L-N, 640 L-G 420 L-N, 840 L-G 300 L-G, 300 L-L 640 L-G, 640 L-L 840 L-G, 840 L-L Input power frequency 50/60 Hz Enclosure rating NEMA ® 4Operating temperature –20 °C to +50 °C (–4 °F to +122 °F)Operating humidity 5–95%, noncondensing Operating altitudeUp to 16,000 ft (5000 m)Agency certification and approvals UL 1449 5th Edition Warranty2 yearsFeature:Optional Surge Protection DeviceFunction:Over-voltage transient surge suppression for additional system protection.Benefit:Eaton Bussmann Series Power Module switch offers a fully integrated surge protection solution that is designed to comply with NEC 620.51. Along with meeting code requirements, the integration of this surge protection device yields additional benefits such as:• Space Efficiency: By integrating SPDs into existing electrical equipment, additional space for separate SPD units is not required.• Simplified Installation: Integral SPDs eliminate the need for additional time and labor to install on the job site.• Reduced Material Costs: Integral SPD can lower the overall material costs by reducing the need for extra enclosures, conduits, and wiring.• Enhanced Protection: Shorter wire leads result in lower let-through voltages, offering better protection for sensitive electronic equipment.• Aesthetics: Integrated SPD provides a cleaner, more organized appearance within electrical panels.Eaton, Bussmann, Quik-Spec and SAMI are valuable trademarks of Eaton in the US and other countries. Y ou are not permitted to use the Eaton trademarks without prior written consent of Eaton.CSA is a registered trademark of the Canadian Standards Group.NEC is a registered trademark of the National Fire Protection Association, Inc.NEMA is a registered trademark of theNational Electrical Manufacturers Association.UL is a registered trademark of the Underwriters Laboratories, Inc.Eaton1000 Eaton Boulevard Cleveland, OH Bussmann Division 114 Old State Road Ellisville, MO 63021United States/bussmannseries © 2024 EatonAll Rights Reserved Publication No. 1145September 2024The only controlled copy of this data sheet is the electronic read-only version located on the Eaton network drive. All other copies of this document are by definition uncontrolled. This bulletin is intended to clearly present comprehensive product data and provide technical information that will help the end user with design applications. Eaton reserves the right, without notice, to change design or construction of any products and to discontinue or limit distribution of any products. Eaton also reserves the right to change or update, without notice, any technical information contained in this bulletin. Once a product has been selected, it should be tested by the user in all possible applications.For Eaton’s Bussmann series product information,call 1-855-287-7626 or visit:/bussmannseriesFollow us on social media to get the latest product and support information.。

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Features• Low On-Resistance: R DS(ON) • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed• Low Input/Output Leakage• Lead Free By Design/RoHS Compliant (Note 2) • ESD Protected Up To 2kV • "Green" Device (Note 4)Mechanical Data• Case: SOT-523 • Case Material: Molded Plastic, “Green” MoldingCompound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020D • Terminals: Finish ⎯ Matte Tin annealed over Alloy 42leadframe. Solderable per MIL-STD-202, Method 208 • Terminal Connections: See Diagram • Marking Information: See Page 3 • Ordering Information: See Page 3 • Weight: 0.002 grams (approximate)Maximum Ratings @T A = 25°C unless otherwise specifiedCharacteristicSymbol Value Units Drain-Source Voltage V DSS 60 VGate-Source Voltage V GSS±20 V Drain Current (Note 1) ContinuousPulsed (Note 3)I D300800mAThermal Characteristics @T A = 25°C unless otherwise specifiedCharacteristicSymbol Value Units Total Power Dissipation (Note 1)P D 150 mW Thermal Resistance, Junction to Ambient R θJA 833 °C/W Operating and Storage Temperature Range T J , T STG-65 to +150°CElectrical Characteristics @T A = 25°C unless otherwise specifiedCharacteristicSymbol Min Typ Max UnitTest ConditionOFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BV DSS 60 ⎯ ⎯ V V GS = 0V, I D = 10μA Zero Gate Voltage Drain Current I DSS ⎯ ⎯ 1.0 μA V DS = 60V, V GS = 0V Gate-Source LeakageI GSS ⎯ ⎯ ±10 μA V GS = ±20V, V DS = 0V ON CHARACTERISTICS (Note 5) Gate Threshold VoltageV GS(th) 1.0 1.6 2.5 VV DS = 10V, I D = 1mA Static Drain-Source On-Resistance R DS (ON) ⎯ ⎯ ⎯ 2.0 3.0 ΩV GS = 10V, I D = 0.5A V GS = 5V, I D = 0.05A Forward Transfer Admittance |Y fs | 80 ⎯ ⎯ ms V DS =10V, I D = 0.2A DYNAMIC CHARACTERISTICS Input Capacitance C iss ⎯ ⎯ 50 pF V DS = 25V, V GS = 0V f = 1.0MHz Output CapacitanceC oss ⎯ ⎯ 25 pF Reverse Transfer CapacitanceC rss⎯⎯5.0pFNotes: 1. Device mounted on FR-4 PCB. 2. No purposefully added lead.3. Pulse width ≤10μS, Duty Cycle ≤1%4. Diodes Inc.’s “Green” policy can be found on our website at /products/lead_free/index.php.5. Short duration pulse test used to minimize self-heating effect.SOT-523TOP VIEWPin Out ConfigurationESD Protected up to 2kVEQUIVALENT CIRCUITPlease click here to visit our online spice models database.V , DRAIN-SOURCE VOLTAGE (V)Fig. 1 Typical Output CharacteristicsDS I , D R A I N C U R R E N T (A )DFig. 2 Typical Transfer CharacteristicsGS T , CHANNEL TEMPERATURE (°C)Fig. 3 Gate Threshold Voltage vs. Channel T emperaturech 00.51.5I DRAIN CURRENT (A)Fig. 4 Static Drain-Source On-Resistancevs. Drain CurrentD , R , S T A T I C D R A I N -S O U R CE D S (O N)Fig. 5 Static Drain-Source On-Resistancevs. Drain CurrentDR , S T A T I C D R A I N -S O U R C E D S (O N )V GATE SOURCE VOLTAGE (V)Fig. 6 Static Drain-Source On-Resistancevs. Gate-Source VoltageGS,R , S T A T I C D R A I N -S O U R C E O N -R E S I S T A N C E ()D S (O N )ΩFig. 7 CH Static Drain-Source On-State Resistancevs. Channel T emperatureR , S T A T I C D R A I N -S O U R C E D S (O N )1I , R E V E R S E D R A I N C U R RE N T (A )D R 1I , DRAIN CURRENT (A)D Fig.10 Forward Transfer Admittancevs. Drain CurrentOrdering Information (Note 6)Part Number Case Packaging DMN601TK-7SOT-523 3000/Tape & ReelNotes: 6. For packaging details, go to our website at /datasheets/ap02007.pdf.Marking InformationDate Code KeyYear 2005 2006 2007 2008 2009 2010 2011 2012 Code S T U V W X Y ZMonth Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N DK7K = Product Type Marking Code YM = Date Code Marking Y = Year (ex: S = 2005) M = Month (ex: 9 = September) K7K YMPackage Outline DimensionsSuggested Pad LayoutIMPORTANT NOTICEDiodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.LIFE SUPPORTDiodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.SOT-523Dim Min Max Typ A 0.15 0.30 0.22 B 0.75 0.85 0.80 C 1.45 1.75 1.60 D ⎯ ⎯ 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 J 0.00 0.10 0.05 K 0.60 0.80 0.75 L 0.10 0.30 0.22 M 0.10 0.20 0.12 N 0.45 0.65 0.50α0° 8° ⎯ All Dimensions in mmDimensions Value (in mm)Z1.8 X 0.4 Y 0.51 C 1.3 E 0.7X EYCZ分销商库存信息: DIODESDMN601TK-7。