HGT1S12N60C3中文资料

S E M I C O N D U C T O R

HGTP12N60C3, HGT1S12N60C3,

HGT1S12N60C3S

24A, 600V, UFS Series N-Channel IGBTs

Features

•24A, 600V at T C = 25o C •600V Switching SOA Capability

•Typical Fall Time . . . . . . . . . . . . . .230ns at T J = 150o C •Short Circuit Rating •Low Conduction Loss

Formerly Developmental Type T A49123.

Description

The HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25o C and 150o C.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power sup-plies and drivers for solenoids, relays and contactors.

Terminal Diagram

N-CHANNEL ENHANCEMENT MODE

Ordering Information

PART NUMBER PACKAGE BRAND HGTP12N60C3TO-220AB P12N60C3HGT1S12N60C3TO-262AA S12N60C3HGT1S12N60C3S

TO-263AB

S12N60C3

NOTE:When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in Tape and Reel, i.e.,HGT1S12N60C3S9A.

C

E

G

Packaging

JEDEC TO-220AB

JEDEC TO-262AA

JEDEC TO-263AB

HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:4,364,0734,417,3854,430,7924,443,9314,466,1764,516,1434,532,5344,567,6414,587,7134,598,4614,605,9484,618,8724,620,2114,631,5644,639,7544,639,7624,641,1624,644,6374,682,1954,684,4134,694,3134,717,6794,743,9524,783,6904,794,4324,801,9864,803,5334,809,0454,809,0474,810,6654,823,1764,837,6064,860,0804,883,767

4,888,627

4,890,143

4,901,127

4,904,609

4,933,740

4,963,951

4,969,027

GATE

COLLECTOR EMITTER

COLLECTOR (FLANGE)

EMITTER

COLLECTOR GATE

COLLECTOR (FLANGE)

COLLECTOR (FLANGE)

GATE EMITTER

January 1997

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.File Number

4040.3

Absolute Maximum Ratings T C = 25o C, Unless Otherwise Specified

HGTP12N60C3, HGT1S12N60C3,

HGT1S12N60C3S UNITS Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV CES600V Collector Current Continuous

At T C = 25o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I C2524A

At T C = 110o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I C11012A Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I CM96A Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V GES±20V Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V GEM±30V Switching Safe Operating Area at T J = 150o C, Figure 14 . . . . . . . . . . . . . . . . . . . .SSOA24A at 600V

Power Dissipation Total at T C = 25o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P D104W Power Dissipation Derating T C > 25o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.83W/o C Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E ARV100mJ Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . .T J, T STG-40 to 150o C Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T L260o C Short Circuit Withstand Time (Note 2) at V GE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . .t SC4µs Short Circuit Withstand Time (Note 2) at V GE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . .t SC13µs NOTES:

1.Repetitive Rating: Pulse width limited by maximum junction temperature.

2.V CE(PK) = 360V, T J = 125o C, R GE = 25Ω.

Electrical Specifications T C = 25o C, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Collector-Emitter Breakdown Voltage BV CES I C = 250µA, V GE = 0V600--V Emitter-Collector Breakdown Voltage BV ECS I C = 10mA, V GE= 0V2430-V Collector-Emitter Leakage Current I CES V CE = BV CES T C = 25o C--250µA

V CE = BV CES T C = 150o C-- 1.0mA

Collector-Emitter Saturation Voltage V CE(SAT)I C = I C110,

V GE = 15V T C = 25o C- 1.65 2.0V T C = 150o C- 1.85 2.2V

Gate-Emitter Threshold Voltage V GE(TH)I C = 250µA,

V CE = V GE

T C = 25o C 3.0 5.0 6.0V Gate-Emitter Leakage Current I GES V GE =±20V--±100nA

Switching SOA SSOA T J = 150o C

R G = 25Ω

V GE = 15V

L = 100µH V CE(PK)= 480V80--A V CE(PK)= 600V24--A

Gate-Emitter Plateau Voltage V GEP I C = I C110, V CE = 0.5 BV CES-7.6-V

On-State Gate Charge Q G(ON)I C = I C110,

V CE = 0.5 BV CES V GE = 15V-4855nC V GE = 20V-6271nC

Current Turn-On Delay Time t D(ON)I T J = 150o C,

I CE = I C110,

V CE(PK) = 0.8 BV CES,

V GE = 15V,

R G = 25Ω,

L = 100µH -14-ns

Current Rise Time t RI-16-ns Current Turn-Off Delay Time t D(OFF)I-270400ns Current Fall Time t FI-210275ns Turn-On Energy E ON-380-µJ Turn-Off Energy (Note 3)E OFF-900-µJ Thermal Resistance RθJC-- 1.2o C/W NOTE:

3.Turn-Off Energy Loss (E OFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and

ending at the point where the collector current equals zero (I CE = 0A). The HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S were tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include diode losses.